KR20020032168A - Method of manufacturing tungsten silicide film - Google Patents
Method of manufacturing tungsten silicide film Download PDFInfo
- Publication number
- KR20020032168A KR20020032168A KR1020000063176A KR20000063176A KR20020032168A KR 20020032168 A KR20020032168 A KR 20020032168A KR 1020000063176 A KR1020000063176 A KR 1020000063176A KR 20000063176 A KR20000063176 A KR 20000063176A KR 20020032168 A KR20020032168 A KR 20020032168A
- Authority
- KR
- South Korea
- Prior art keywords
- gas containing
- component
- tungsten
- gas
- tungsten silicide
- Prior art date
Links
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910021342 tungsten silicide Inorganic materials 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 128
- 230000008021 deposition Effects 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 34
- 239000010937 tungsten Substances 0.000 claims abstract description 34
- 238000011010 flushing procedure Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 38
- 238000010899 nucleation Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910005096 Si3H8 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
본 발명은 폴리 사이드 구조의 텅스텐 실리사이드층의 형성 방법에 관한 것으로, 특히 텅스텐 실리사이드층 하부에 형성되는 게이트 폴리의 보이드를 감소 또는 억제시킬 수 있는 텅스텐 실리사이드층의 형성 방법에 관한 것이다.The present invention relates to a method of forming a tungsten silicide layer having a polyside structure, and more particularly, to a method of forming a tungsten silicide layer capable of reducing or suppressing voids of a gate poly formed under the tungsten silicide layer.
반도체 소자가 고집적화됨에 따라 비트라인 및 게이트 라인 등에 비저항이 낮은 텅스텐실리사이드를 적용한 폴리사이드 구조를 채용하고 있다. 일반적으로 텅스텐 실리사이드층은 WF6가스와 SiH4가스를 반응시켜 저압 화학기상증착법을 이용하여 형성한다. 그런데 이 방법에 의해 형성된 텅스텐 실리사이드 층은 반도체 소자의 고집적화에 따른 높은 종횡비를 갖는 콘택홀에서는 25% 이하의 낮은 스텝 커버리지를 갖는다. 또한, WF6가스와 SiH4가스와의 반응에 의해 생성된 부산물 중의 하나인 HF에 의해 텅스텐 실리사이드층 내에는 F 성분이 많이 포함되게 된다. F성분은 텅스텐 실리사이드 하부에 형성된 게이트 산화막으로 확산하여 게이트 산화막의 두께를 증가시켜 게이트 산화막의 신뢰성을 저하시키는 문제를 안고 있다.As semiconductor devices have been highly integrated, a polyside structure in which tungsten silicide with low resistivity is applied to bit lines and gate lines is adopted. In general, the tungsten silicide layer is formed by reacting WF 6 gas and SiH 4 gas using low pressure chemical vapor deposition. However, the tungsten silicide layer formed by this method has a low step coverage of 25% or less in contact holes having a high aspect ratio due to high integration of semiconductor devices. In addition, the F component is contained in the tungsten silicide layer by HF, which is one of by-products generated by the reaction between the WF 6 gas and the SiH 4 gas. The F component has a problem of decreasing the reliability of the gate oxide film by increasing the thickness of the gate oxide film by diffusing into the gate oxide film formed under the tungsten silicide.
이런 문제를 해결하기 위해, SiH4가스 대신에 SiH2Cl2(DCS) 가스를 사용하여 텅스텐 실리사이드층을 형성하는 기술이 제안되었다. DCS는 SiH4에 비해 반응성이 낮으므로, 텅스텐실리사이드층 내의 F 성분의 함량이 SiH4를 사용하는 경우에 비해 2 내지 3 오더(order) 적으므로, 게이트 산화막의 두께 증가가 최소화되어 그의 신뢰성 저하를 억제할 수 있으며, 높은 종횡비를 갖는 콘택홀에서의 스텝 커버리지도 SiH4를 사용하는 경우에 비해 2 배정도 증가한다.To solve this problem, a technique of forming a tungsten silicide layer using SiH 2 Cl 2 (DCS) gas instead of SiH 4 gas has been proposed. Since the DCS is less reactive than SiH 4 , the content of the F component in the tungsten silicide layer is 2 to 3 orders less than that in the case of using SiH 4 , thereby minimizing the increase in the thickness of the gate oxide film and reducing its reliability. It can be suppressed, and, the step coverage is also increased 2 times as compared with the case of using SiH 4 in the contact hole having a high aspect ratio.
그런데 DCS와 WF6과의 반응을 이용하여 게이트 라인을 형성할 경우에는 다음과 같은 문제가 발생한다. DCS는 초기 증착 특성이 불량하므로, 텅스텐 실리사이드층을 본격적으로 형성하기 이전에 핵층을 형성하는 공정을 실시하며, 핵층 형성 공정에서는 DCS:WF6이 100:1 이상이 되어야 한다. 그런데, DCS는 Cl 성분을 함유하고 있으므로, 이런 Cl 성분은 텅스텐 실리사이드층 바로 하부에 형성되는 게이트 폴리의 실리콘 성분과 반응하게 되어, 게이트 폴리의 실리콘 성분이 텅스텐 실리사이드층으로 빠져 나게게된다. 따라서, 게이트 폴리에 보이드가 발생하게 되는 문제가 있다. 게이트 폴리에 보이드가 발생하면, 게이트 폴리와 텅스텐 실리사이드층으로 이루어지는 게이트 전극을 포함하는 트랜지스터의 문턱 전압이 측정되지 않는 등, 전술한 트랜지스터는 반도체 소자로서의 역할을 전혀 수행하지 못하게 된다.However, when the gate line is formed using the reaction between DCS and WF 6 , the following problem occurs. Since DCS has poor initial deposition characteristics, a nucleus layer is formed before full formation of the tungsten silicide layer. In the nucleus layer forming process, DCS: WF6 should be 100: 1 or more. However, since the DCS contains a Cl component, the Cl component reacts with the silicon component of the gate poly formed directly under the tungsten silicide layer, so that the silicon component of the gate poly escapes into the tungsten silicide layer. Therefore, there is a problem that voids occur in the gate poly. When voids occur in the gate poly, the above-described transistors do not serve as semiconductor elements at all, such that the threshold voltage of the transistor including the gate electrode composed of the gate poly and the tungsten silicide layer is not measured.
게이트 폴리의 보이드를 형성시키는 원인이 되는 Cl의 함량을 줄이기 위해서는 핵층 형성 단계에서 DCS:WF6를 줄이는 것이 필요하며, 이를 위해서는 게이트 폴리 표면에 실리콘을 균일하게 씨딩(seeding)하는 것이 필요하다. 실리콘 성분의 씨딩을 위해서 DCS 가스를 사용하여 핵층 형성 단계 이전에 플러슁(flusing)하는 기술이 제안되었으나, 이 기술은 씨딩 효과가 작아 DCS:WF6를 줄이는 것에는 한계가 있다.In order to reduce the content of Cl which causes the gate poly to form voids, it is necessary to reduce DCS: WF 6 in the nucleus layer formation step, and to do this, it is necessary to uniformly seed silicon on the gate poly surface. A technique for flushing the silicon layer prior to the nuclear layer formation step using a DCS gas has been proposed, but this technique has a limited seeding effect, thus reducing DCS: WF 6 .
이에, DCS 가스 대신, SiH4가스, Si2H6가스, Si3H8또는 H2가스를 이용하여 핵층 형성 단계 이전에 프리플러슁(Pre-flushing)하고 그리고 텅스텐 실리사이드층의 형성 이후에 포스트 플러슁(post-flushing)하는 기술이 AMAT(Applied MATerials, Inc.; 관련 미국 특허 5,643,633 및 5,997,950호)에 의해 개발되었다.Thus, instead of DCS gas, SiH 4 gas, Si 2 H 6 gas, Si 3 H 8 or H 2 gas is used to pre-flush before the nuclear layer formation step and post the formation of the tungsten silicide layer Post-flushing technology has been developed by AMAT (Applied MATerials, Inc .; related US Pat. Nos. 5,643,633 and 5,997,950).
본 발명이 이루고자 하는 기술적 과제는 폴리사이드 구조의 게이트 라인의 게이트 폴리의 보이드의 생성을 억제할 수 있는 텅스텐 실리사이드층을 형성하는 방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method of forming a tungsten silicide layer capable of suppressing generation of voids in a gate poly of a gate line having a polyside structure.
도 1은 본 발명에 따라 텅스텐 실리사이드층을 형성하는 단계를 나타내는 흐름도이다.1 is a flow chart illustrating the step of forming a tungsten silicide layer in accordance with the present invention.
본 발명이 이루고자하는 기술적 과제를 달성하기 위해서, 층착 영역에 기판을 위치시킨다. 증착 영역에 직접적으로 또는 마이크로 웨이브를 이용하여 원격으로 플라즈마를 인가하고, 실리콘 성분을 포함하는 가스와 수소 성분을 포함하는 가스를 증착 영역으로 도입하여 프리 플러슁한다. 실리콘 성분을 포함하는 가스의 공급은 계속 진행하되 수소 성분을 포함하는 가스의 유입을 차단하고, 텅스텐 성분을 포함한 가스를 증착 영역으로 도입하여 기판 상면에 핵층을 형성한다. 실리콘 성분을 포함하는 가스와 텅스텐을 포함한 가스의 유입을 계속 진행하여 핵층 상면에 텅스텐 실리사이드층을 형성한다. 이후에 실리콘 성분을 포함하는 가스의 공급은 계속 진행하고 텅스텐 성분을 포함하는 가스의 공급은 차단한 뒤 텅스텐 실리사이드층이 형성된 증착 영역에 플라즈마를 인가하고 수소 성분을 포함하는 가스를 증착 영역으로 재도입하여 포스트 플러슁한다. 여기서, 실리콘 성분을 포함하는 가스는 SiH2Cl2, SiH4, Si2H6 또는 Si3H8이고, 수소 성분을 포함하는 가스는 H2 PH3 또는 B2H6이며, 텅스텐을 포함하는 가스는 WF6이다.In order to achieve the technical problem to be achieved by the present invention, the substrate is placed in the layered region. The plasma is applied directly to the deposition region or remotely using microwave, and a gas containing a silicon component and a gas containing a hydrogen component are introduced into the deposition region and preflushed. The supply of the gas containing the silicon component is continued, but the flow of the gas containing the hydrogen component is blocked, and the gas including the tungsten component is introduced into the deposition region to form a nuclear layer on the upper surface of the substrate. Inflow of a gas containing silicon and a gas containing tungsten is continued to form a tungsten silicide layer on the upper surface of the nuclear layer. Subsequently, the supply of the gas containing the silicon component continues and the supply of the gas containing the tungsten component is interrupted, and then plasma is applied to the deposition region in which the tungsten silicide layer is formed, and the gas containing the hydrogen component is reintroduced into the deposition region. Post flush. Here, the gas containing a silicon component is SiH2Cl2, SiH4, Si2H6 or Si3H8, the gas containing a hydrogen component is H2 PH3 or B2H6, and the gas containing tungsten is WF6.
또한, 핵층 형성 단계와 텅스텐 실리사이드층 형성 단계 사이에, 증착 영역으로 수소를 포함한 가스를 도입하여 플러슁하는 단계를 더 구비하며, 플러슁 형성 단계에서, 증착영역의 기판이 가열되거나, 층착 영역에 플라즈마를 인가할 수 있다.The method may further include introducing and flushing a gas containing hydrogen into the deposition region between the nucleus layer forming step and the tungsten silicide layer forming step. In the flushing forming step, the substrate in the deposition region may be heated or may be deposited on the deposition region. Plasma can be applied.
한편, 핵층 또는 텅스텐 실리사이드층내의 Cl의 함량을 낮추기 위해서는 핵층 형성 이전의 프리 플러슁, 핵층 형성 이후 주층인 텅스텐 실리사이드층 형성 이전의 플러슁 및 텅스텐 실리사이드층 형성 이후의 포스트 플러슁 중의 적어도 어느 한 단계만을 실시할 수 있다.On the other hand, in order to lower the content of Cl in the nucleus layer or tungsten silicide layer, at least one of the steps of prefluxing before forming the nucleus layer, flushing before forming the tungsten silicide layer, which is the main layer after forming the nucleus layer, and postflushing after forming the tungsten silicide layer, Only can be done.
즉, 일 예로서, 층착 영역에 기판을 위치시키고, 증착 영역에 실리콘 성분을 포함하는 가스와 텅스텐 성분을 포함한 가스를 도입하여 기판 상에 핵층과 텅스텐 실리사이드층을 순차적으로 형성한다. 다음, 실리콘 성분을 포함하는 가스의 공급은 계속 진행하고 텅스텐 성분을 포함하는 가스의 도입을 차단한 뒤 텅스텐 실리사이드층이 형성된 증착 영역에 플라즈마를 인가하고 수소 성분을 포함하는 가스를 증착 영역으로 도입하여 포스트 플러슁한다.That is, as an example, the substrate is positioned in the deposition region, the gas including the silicon component and the gas including the tungsten component are introduced into the deposition region to sequentially form the nucleus layer and the tungsten silicide layer on the substrate. Next, the supply of the gas containing the silicon component is continued and the introduction of the gas containing the tungsten component is interrupted, and then a plasma is applied to the deposition region in which the tungsten silicide layer is formed, and the gas containing the hydrogen component is introduced into the deposition region. Post flush.
다른 예로서, 층착 영역에 기판을 위치시킨 후, 실리콘 성분을 포함하는 가스와 텅스텐 성분 포함하는 가스를 도입하여 핵층을 형성한다. 다음, 실리콘 성분을 포함하는 가스와 텅스텐 성분을 포함하는 가스의 도입을 차단하고 증착 영역으로 수소를 포함한 가스의 도입을 계속 진행하여 핵층을 플러슁한다. 수소 성분을 포함하는 가스의 유입을 차단하고, 실리콘 성분을 포함하는 가스와 텅스텐 성분을 포함하는 가스의 공급을 재개하여 핵층 상면에 텅스텐 실리사이드층을 형성한다.As another example, after placing the substrate in the layered region, a gas containing a silicon component and a gas containing a tungsten component are introduced to form a nuclear layer. Next, the introduction of the gas containing the silicon component and the gas containing the tungsten component is blocked and the introduction of the gas containing hydrogen into the deposition region is continued to flush the nuclear layer. The inflow of the gas containing the hydrogen component is blocked, and the supply of the gas containing the silicon component and the gas containing the tungsten component is resumed to form a tungsten silicide layer on the upper surface of the nuclear layer.
한편, 수소 성분을 포함한 가스는 핵층 형성 단계, 텅스텐 실리사이드층 형성 단계, 프리 플러슁 단계, 플러슁 단계 및 포스트 플러슁 단계 전반에 걸쳐 증착 영역내로 계속 공급될 수 있다.Meanwhile, the gas including the hydrogen component may be continuously supplied into the deposition region throughout the nucleus layer forming step, the tungsten silicide layer forming step, the pre-flushing step, the flushing step and the post flushing step.
이하 첨부된 도 1을 참고로 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to FIG. 1.
텅스텐 실리사이드층이 형성될 기판(도시되지 않음)을 증착 영역(도시되지 않음)으로 이동시킨다. 텅스텐 실리사이드층은 2단계, 즉 핵층 형성 단계(20)와 주층(main deposition)(40)에 걸쳐 형성된다. 핵층 형성 단계(20)를 실시하기 이전에 기판을 프리 플러슁한다. 프리 플러슁 단계(10)에서, 증착 영역에 플라즈마를 인가한 상태에서, 실리콘 성분을 포함하는 가스와 수소 성분을 포함하는 가스를 증착 영역 내로 도입시킨다. 이외에 캐리어 가스로서 아르곤 또는 헬륨 가스를 증착 영역으로 도입시킨다. 플라즈마는 증착 영역을 구비하는 챔버(도시되지 않음)에 직접인가될 수도 있고 마이크로 웨이브를 이용해 원격으로 인가될 수도 있다.The substrate (not shown) on which the tungsten silicide layer is to be formed is moved to a deposition region (not shown). The tungsten silicide layer is formed in two steps, namely, the nucleus layer forming step 20 and the main deposition 40. The substrate is preflushed before performing the nucleus layer forming step 20. In the pre-flushing step 10, while a plasma is applied to the deposition region, a gas containing a silicon component and a gas containing a hydrogen component are introduced into the deposition region. In addition, argon or helium gas is introduced into the deposition region as a carrier gas. The plasma may be applied directly to a chamber (not shown) having a deposition region or may be applied remotely using microwaves.
실리콘 성분을 포함하는 가스로는 SiH2Cl2, SiH4, Si2H6 또는 Si3H8등이 있고, 수소 성분을 포함하는 가스는 H2, PH3 또는 B2H6등이 있으며, 본 실시예에서는 실리콘 성분을 포함하는 가스로 SiH2Cl2를, 수소 성분을 포함하는 가스는 H2를 사용하였다. 플라즈마 상태에서 SiH2Cl2는 분해가 활발하게 이루어지고 Si와 Cl의 반응도도 증가하게 된다. 이런 Si는 이후에 진행되는 핵층 형성 단계(20)에서 실리콘 성분의 씨딩 효과를 상승시킨다. 따라서, 핵층 형성 단계(20)에서 SiH2Cl2와 WF6의 비율을 50:1 이하로 줄일 수 있다. 한편, 증가된 Cl의 반응도는 Cl과 수소 성분을 포함한 가스 H2 로 부터 공급된 수소 원자와의 반응을 활발히 유도하여, HCl을 형성한다. HCl은 부산물로써, 증착 영역으로부터 이 부산물은 제거된다.Examples of the gas containing a silicon component include SiH 2 Cl 2, SiH 4, Si 2 H 6, or Si 3 H 8, and a gas containing a hydrogen component includes H 2, PH 3, or B 2 H 6, and in this embodiment, SiH 2 Cl 2 is a gas containing a silicon component. Gas containing H2 was used. In the plasma state, SiH 2 Cl 2 is actively decomposed and the reaction between Si and Cl is increased. This Si raises the seeding effect of the silicon component in the nucleus layer forming step 20 which proceeds later. Therefore, the ratio of SiH 2 Cl 2 and WF 6 in the nuclear layer forming step 20 can be reduced to 50: 1 or less. On the other hand, the increased reactivity of Cl actively induces the reaction of Cl with the hydrogen atom supplied from the gas H2 containing the hydrogen component, thereby forming HCl. HCl is a by-product, which is removed from the deposition zone.
다음, 핵층 형성 단계(20)에서, 이미 공급되고 있는 SiH2Cl4를 실리콘 소스 가스로 사용하고, 수소 성분을 포함한 가스 H2의 공급을 차단한 뒤 텅스텐 소스 가스로서 WF6을 증착 영역으로 도입하여 저온 화학기상증착 공정을 진행한다. 그런데, 소정 두께의 핵층을 기판 상면에 형성 하는 저온 화학 기상증착 공정 시, 증착 영역 내에는 Cl성분이 H와 반응하여 상당부분 제거되어 있으므로, 핵층에는 플라즈마 처리 없이 SiH4 또는 SiH2Cl4 등을 사용하여 프리 플러슁하는 기술에 비해, 핵층에 포함된 Cl 함량이 적게된다.Next, in the nuclear layer formation step 20, SiH 2 Cl 4 already supplied is used as the silicon source gas, and the supply of the gas H 2 including the hydrogen component is cut off, and then WF 6 is introduced into the deposition region as a tungsten source gas to form a low temperature chemical vapor deposition. Proceed with the process. By the way, during the low temperature chemical vapor deposition process in which the nuclear layer having a predetermined thickness is formed on the upper surface of the substrate, since the Cl component reacts with H in the deposition region, a substantial portion thereof is removed. Thus, the nuclear layer is pre-filled using SiH4 or SiH2Cl4 without plasma treatment. Compared to the technique described above, the Cl content in the nuclear layer is less.
한편, 핵층 형성 단계(20)에서 발생되는 Cl은 이후에 행해지는 플러슁 단계(30)에 의해서 제거될 수 있다. 즉, 플러슁 단계(30)에서, 실리콘 소스 가스인 SiH2Cl4와 텅스텐 소스 가스인 WF6의 공급을 차단하고 수소 성분을 포함하는 가스예를 들면 H2, PH3 또는 B2H6 가스를 사용하여 플러슁을 한다. 본 실시예에서는 H2 가스를 이용하였다. 그런데, 프리 플러슁 단계(10)에서 Cl이 어느 정도 제거된 상태이므로, 플러슁 단계(30)에서는 Cl과 수소의 반응성을 향상시키기 위한 에너지 원으로 기판을 가열할 수도 있으며, 다른 에너지 원으로는 플라즈마를 이용할 수도 있다.On the other hand, Cl generated in the nucleus layer forming step 20 can be removed by a flushing step 30 which is subsequently performed. That is, in the flushing step 30, the supply of SiH2Cl4, which is a silicon source gas, and WF6, which is a tungsten source gas, is cut off and flushed using a gas containing a hydrogen component, for example, H2, PH3, or B2H6 gas. In this example, H2 gas was used. However, since Cl is removed to some extent in the pre-flushing step 10, in the flushing step 30, the substrate may be heated with an energy source for improving the reactivity of Cl and hydrogen. Plasma may also be used.
이제 텅스텐 실리사이드 주증 형성 단계(40)에서, 핵층 상면에 주층인 텅스텐 실리사이드층을 형성한다. 플러슁 형성 단계(30)에서 공급되던 H2 가스 공급을 중단하고 핵층 형성 단계에서 공급되던 SiH2Cl4를 실리콘 소스 가스로 WF6 을 텅스텐 소스 가스로 이용하여 증착 영역으로의 공급을 재개한 뒤 저온 화학기상증착법을 이용하여 텅스텐 실리사이드층을 형성한다.Now in tungsten silicide buildup step 40, a tungsten silicide layer is formed on top of the nucleus layer. The H2 gas supplied from the flush formation step 30 was stopped, and the SiH2Cl4 supplied from the nuclear layer formation step was used as the silicon source gas and WF6 was used as the tungsten source gas to resume the supply to the deposition region, followed by low temperature chemical vapor deposition. To form a tungsten silicide layer.
한편, 텅스텐 실리사이드층의 형성 단계(40)에서 발생되는 Cl은 포스트 플러슁 단계(50)에서 제거될 수 있다. 즉, 포스트 플러슁 단계(50)에서, 실리콘 성분을 포함하는 가스로 SiH2Cl6을 채용하여, 이 가스의 공급을 계속하고, 텅스텐 소스 가스 공급을 중단한 뒤, 텅스텐 실리사이드층이 형성된 증착 영역에 플라즈마를 인가하고 다시 수소 성분 포함 가스 및 캐리어 가스의 공급을 재개한다.Meanwhile, Cl generated in the forming step 40 of the tungsten silicide layer may be removed in the post flushing step 50. That is, in the post flushing step 50, SiH 2 Cl 6 is employed as the gas containing the silicon component, the supply of the gas is continued, the supply of the tungsten source gas is stopped, and the plasma is applied to the deposition region in which the tungsten silicide layer is formed. And supply of the hydrogen component containing gas and the carrier gas again.
본 실시예에서는 핵층 형성 단계 이전, 텅스텐 실리사이드층 형성 단계 이후 및 핵층 형성 단계 이후에 플라즈마를 이용한 플러슁을 실시하는 것에 한정하여 설명하였으나, 폴리실리콘 게이트를 구성하는 핵층 또는 텅스텐 실리사이드층에 포함될 수 있는 cl의 함량을 낯추기 위해서는 이들 단계 중의 적어도 한 단계만을 실시할 수 있다.In the present exemplary embodiment, the present invention is limited to the flushing using plasma before the nucleus layer forming step, after the tungsten silicide layer forming step, and after the nucleus layer forming step, but may be included in the nucleus layer or tungsten silicide layer constituting the polysilicon gate. At least one of these steps may be carried out to reduce the content of cl.
구체적으로 살펴보면, 프리 플러슁만을 행하기 위해서는, 층착 영역에 기판을 위치시킨 뒤, 증착 영역에 플라즈마를 인가하고, 실리콘 성분을 포함하는 가스와 수소 성분을 포함하는 가스를 증착 영역으로 도입하여 프리 플러슁한다. 다음, 실리콘 성분을 포함하는 가스의 공급은 계속 진행하되 수소 성분을 포함하는 가스의 유입을 차단하고, 텅스텐 성분을 포함한 가스를 증착 영역으로 도입하여 기판 상에 핵층을 형성한다. 실리콘 성분을 포함하는 가스와 텅스텐을 포함한 가스의 유입을 계속 진행하여 핵층 상면에 텅스텐 실리사이드층을 형성한다.Specifically, in order to perform pre-flushing only, after placing a substrate in the deposition region, a plasma is applied to the deposition region, and a gas containing a silicon component and a gas containing a hydrogen component are introduced into the deposition region, thereby pre-flushing. and swing. Next, the supply of the gas including the silicon component is continued, but the inflow of the gas including the hydrogen component is blocked, and the gas including the tungsten component is introduced into the deposition region to form a nuclear layer on the substrate. Inflow of a gas containing silicon and a gas containing tungsten is continued to form a tungsten silicide layer on the upper surface of the nuclear layer.
포스트 플러슁만을 행하기 위해서는, 층착 영역에 기판을 위치시키고, 증착 영역에 실리콘 성분을 포함하는 가스와 텅스텐 성분을 포함한 가스를 도입하여 기판 상에 핵층과 텅스텐 실리사이드층을 순차적으로 형성한다. 다음, 실리콘 성분을 포함하는 가스의 공급은 계속 진행하고 텅스텐 성분을 포함하는 가스의 도입을 차단한 뒤 텅스텐 실리사이드층이 형성된 증착 영역에 플라즈마를 인가하고 수소 성분을 포함하는 가스를 증착 영역으로 도입하여 포스트 플러슁한다.In order to perform only post flushing, the substrate is placed in the layered region, and a gas containing a silicon component and a gas containing a tungsten component are introduced into the deposition region to sequentially form a nucleus layer and a tungsten silicide layer on the substrate. Next, the supply of the gas containing the silicon component is continued and the introduction of the gas containing the tungsten component is interrupted, and then a plasma is applied to the deposition region in which the tungsten silicide layer is formed, and the gas containing the hydrogen component is introduced into the deposition region. Post flush.
핵층을 플러슁하기 위해서는, 층착 영역에 기판을 위치시킨 후, 실리콘 성분을 포함하는 가스와 텅스텐 성분 포함하는 가스를 도입하여 핵층을 형성한다. 다음, 실리콘 성분을 포함하는 가스와 텅스텐 성분을 포함하는 가스의 도입을 차단하고 증착 영역으로 수소를 포함한 가스의 도입을 계속 진행하여 핵층을 플러슁한다. 수소 성분을 포함하는 가스의 유입을 차단하고, 실리콘 성분을 포함하는 가스와 텅스텐 성분을 포함하는 가스의 공급을 재개하여 핵층 상면에 텅스텐 실리사이드층을 형성한다.In order to flush the nuclear layer, the substrate is positioned in the layered region, and then a gas containing a silicon component and a gas containing a tungsten component are introduced to form a nuclear layer. Next, the introduction of the gas containing the silicon component and the gas containing the tungsten component is blocked and the introduction of the gas containing hydrogen into the deposition region is continued to flush the nuclear layer. The inflow of the gas containing the hydrogen component is blocked, and the supply of the gas containing the silicon component and the gas containing the tungsten component is resumed to form a tungsten silicide layer on the upper surface of the nuclear layer.
수소 성분을 포함한 가스는 핵층 형성 단계, 텅스텐 실리사이드층 형성 단계, 프리 플러슁 단계, 플러슁 단계 및 포스트 플러슁 단계 전반에 걸쳐 증착 영역내로 계속 공급될 수 있다.The gas containing the hydrogen component may continue to be supplied into the deposition region throughout the nucleation layer formation step, tungsten silicide layer formation step, pre-flushing step, flushing step and post flushing step.
이상에서 살펴본 바와 같이, 본 발명은 핵층 형성 단계 이전, 텅스텐 실리사이드층 형성 단계 이후 및/또는 핵층 형성 단계 이후에, 증착 영역에 플라즈마를 인가한 상태에서 수소 성분을 포함하는 가스를 증착 영역으로 도입하여, 핵층 또는 텅스텐 실리사이드층에 포함될 수 있는 Cl의 함량을 낮춤으로써, 게이트 폴리의 보이드 생성을 억제할 수 있다.As described above, the present invention, before the nucleus layer forming step, after the tungsten silicide layer forming step and / or after the nucleus layer forming step, by introducing a gas containing a hydrogen component into the deposition region in the plasma applied to the deposition region By lowering the amount of Cl that can be included in the nucleus layer or the tungsten silicide layer, void formation of the gate poly can be suppressed.
또한, 프리 플러슁 단계에서, 플라즈마가 인가된 상태에서 실리콘 성분을 포함하는 가스를 증착 영역으로 도입하여 플러슁 함으로써, 씨딩 효과를 상승시킬 수 있다. 따라서, 핵층 형성 단계에서 SiH2Cl2 를 사용할 경우의 SiH2Cl2와 WF6 의 비를 낮출 수 있어, Cl의 발생 함량을 줄일 수 있다.In addition, in the pre-flushing step, the seeding effect can be increased by introducing and flushing a gas containing a silicon component into the deposition region while the plasma is applied. Therefore, the ratio of SiH 2 Cl 2 and WF 6 in the case of using SiH 2 Cl 2 in the nuclear layer formation step can be lowered, thereby reducing the amount of Cl generated.
Claims (14)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000063176A KR100688481B1 (en) | 2000-10-26 | 2000-10-26 | Method of manufacturing tungsten silicide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000063176A KR100688481B1 (en) | 2000-10-26 | 2000-10-26 | Method of manufacturing tungsten silicide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020032168A true KR20020032168A (en) | 2002-05-03 |
| KR100688481B1 KR100688481B1 (en) | 2007-03-08 |
Family
ID=19695559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000063176A KR100688481B1 (en) | 2000-10-26 | 2000-10-26 | Method of manufacturing tungsten silicide film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100688481B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100430473B1 (en) * | 2001-02-06 | 2004-05-10 | 삼성전자주식회사 | Method for depositing tungsten silicide |
| US7189641B2 (en) | 2003-08-19 | 2007-03-13 | Samsung Electronics Co., Ltd. | Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers |
| US7521357B2 (en) | 2004-02-24 | 2009-04-21 | Samsung Electronics Co., Ltd. | Methods of forming metal wiring in semiconductor devices using etch stop layers |
-
2000
- 2000-10-26 KR KR1020000063176A patent/KR100688481B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100430473B1 (en) * | 2001-02-06 | 2004-05-10 | 삼성전자주식회사 | Method for depositing tungsten silicide |
| US7189641B2 (en) | 2003-08-19 | 2007-03-13 | Samsung Electronics Co., Ltd. | Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers |
| US7521357B2 (en) | 2004-02-24 | 2009-04-21 | Samsung Electronics Co., Ltd. | Methods of forming metal wiring in semiconductor devices using etch stop layers |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100688481B1 (en) | 2007-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6927163B2 (en) | Method and apparatus for manufacturing a barrier layer of semiconductor device | |
| US10916434B2 (en) | Feature fill with multi-stage nucleation inhibition | |
| US20200185273A1 (en) | Feature fill with nucleation inhibition | |
| US7262125B2 (en) | Method of forming low-resistivity tungsten interconnects | |
| US7655567B1 (en) | Methods for improving uniformity and resistivity of thin tungsten films | |
| US7390743B2 (en) | Methods for forming a structured tungsten layer and forming a semiconductor device using the same | |
| KR100890047B1 (en) | Method for fabricating interconnection in semicondutor device | |
| TWI533402B (en) | Trench filling method and method of manufacturing semiconductor integrated circuit device | |
| US7211506B2 (en) | Methods of forming cobalt layers for semiconductor devices | |
| US6291343B1 (en) | Plasma annealing of substrates to improve adhesion | |
| JP2001291682A (en) | Plasma treatment of titanium nitride film formed by chemical vapor deposition | |
| KR100714269B1 (en) | Method for forming metal layer used the manufacturing semiconductor device | |
| KR20020011123A (en) | Deposition of tungsten films from w(co)6 | |
| KR100494129B1 (en) | The method for forming electrode in semiconductor device | |
| KR100688481B1 (en) | Method of manufacturing tungsten silicide film | |
| US6242367B1 (en) | Method of forming silicon nitride films | |
| US7022601B2 (en) | Method of manufacturing a semiconductor device | |
| KR0161889B1 (en) | Formation method of wiring in semiconductor device | |
| KR970005943B1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2001203171A (en) | Method of silicide formation in semiconductor device | |
| JP3801923B2 (en) | Method for forming tungsten silicide | |
| KR100445411B1 (en) | Method of forming metal line of semiconductor device for reducing contact resistance and improving leakage current characteristic | |
| TWI284965B (en) | Method of manufacturing a semiconductor device | |
| KR20010003420A (en) | Method of forming a diffusion barrier film in a semiconductor device | |
| KR100341247B1 (en) | Method for fabricating semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20100216 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |