KR20020015715A - 실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 - Google Patents

실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 Download PDF

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Publication number
KR20020015715A
KR20020015715A KR1020027000613A KR20027000613A KR20020015715A KR 20020015715 A KR20020015715 A KR 20020015715A KR 1020027000613 A KR1020027000613 A KR 1020027000613A KR 20027000613 A KR20027000613 A KR 20027000613A KR 20020015715 A KR20020015715 A KR 20020015715A
Authority
KR
South Korea
Prior art keywords
copper
polishing
polishing mixture
mixture
wafer
Prior art date
Application number
KR1020027000613A
Other languages
English (en)
Korean (ko)
Inventor
앤드젤코 베이직
루이즈 일리그
제임스 씨. 쥬니어 호세
Original Assignee
헨넬리 헬렌 에프
엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 헨넬리 헬렌 에프, 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 filed Critical 헨넬리 헬렌 에프
Publication of KR20020015715A publication Critical patent/KR20020015715A/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020027000613A 1999-07-19 2000-07-18 실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 KR20020015715A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14457599P 1999-07-19 1999-07-19
US60/144,575 1999-07-19
US61027700A 2000-07-06 2000-07-06
US09/610,277 2000-07-06
PCT/US2000/019872 WO2001006553A1 (fr) 1999-07-19 2000-07-18 Melange de polissage et procede de reduction de l'incorporation de cuivre dans des plaquettes de silicium

Publications (1)

Publication Number Publication Date
KR20020015715A true KR20020015715A (ko) 2002-02-28

Family

ID=26842130

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027000613A KR20020015715A (ko) 1999-07-19 2000-07-18 실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법

Country Status (5)

Country Link
EP (1) EP1212789A1 (fr)
JP (1) JP2003505858A (fr)
KR (1) KR20020015715A (fr)
CN (1) CN1361923A (fr)
WO (1) WO2001006553A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100509980C (zh) * 2002-12-02 2009-07-08 阿科玛股份有限公司 用于铜化学机械平整化加工的组合物及方法
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
DE102006008689B4 (de) 2006-02-24 2012-01-26 Lanxess Deutschland Gmbh Poliermittel und dessen Verwendung
CN114295457A (zh) * 2021-12-30 2022-04-08 江苏鼎胜新能源材料股份有限公司 一种铝合金钎焊复合材料高效低成本金相抛光方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4867757A (en) * 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
JP3290189B2 (ja) * 1991-04-11 2002-06-10 旭電化工業株式会社 シリコンウェハーの研磨方法
US5916819A (en) * 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
MY125856A (en) * 1997-04-30 2006-08-30 Minnesota Mining & Mfg Method of planarizing the upper surface of a semiconductor wafer
JPH1180708A (ja) * 1997-09-09 1999-03-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物

Also Published As

Publication number Publication date
EP1212789A1 (fr) 2002-06-12
CN1361923A (zh) 2002-07-31
WO2001006553A1 (fr) 2001-01-25
JP2003505858A (ja) 2003-02-12

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