KR20020015715A - 실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 - Google Patents
실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 Download PDFInfo
- Publication number
- KR20020015715A KR20020015715A KR1020027000613A KR20027000613A KR20020015715A KR 20020015715 A KR20020015715 A KR 20020015715A KR 1020027000613 A KR1020027000613 A KR 1020027000613A KR 20027000613 A KR20027000613 A KR 20027000613A KR 20020015715 A KR20020015715 A KR 20020015715A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- polishing
- polishing mixture
- mixture
- wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14457599P | 1999-07-19 | 1999-07-19 | |
US60/144,575 | 1999-07-19 | ||
US61027700A | 2000-07-06 | 2000-07-06 | |
US09/610,277 | 2000-07-06 | ||
PCT/US2000/019872 WO2001006553A1 (fr) | 1999-07-19 | 2000-07-18 | Melange de polissage et procede de reduction de l'incorporation de cuivre dans des plaquettes de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20020015715A true KR20020015715A (ko) | 2002-02-28 |
Family
ID=26842130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027000613A KR20020015715A (ko) | 1999-07-19 | 2000-07-18 | 실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1212789A1 (fr) |
JP (1) | JP2003505858A (fr) |
KR (1) | KR20020015715A (fr) |
CN (1) | CN1361923A (fr) |
WO (1) | WO2001006553A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100509980C (zh) * | 2002-12-02 | 2009-07-08 | 阿科玛股份有限公司 | 用于铜化学机械平整化加工的组合物及方法 |
TWI385226B (zh) * | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Cmp控股公司 | 用於移除聚合物阻障之研磨漿液 |
DE102006008689B4 (de) | 2006-02-24 | 2012-01-26 | Lanxess Deutschland Gmbh | Poliermittel und dessen Verwendung |
CN114295457A (zh) * | 2021-12-30 | 2022-04-08 | 江苏鼎胜新能源材料股份有限公司 | 一种铝合金钎焊复合材料高效低成本金相抛光方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4867757A (en) * | 1988-09-09 | 1989-09-19 | Nalco Chemical Company | Lapping slurry compositions with improved lap rate |
JP3290189B2 (ja) * | 1991-04-11 | 2002-06-10 | 旭電化工業株式会社 | シリコンウェハーの研磨方法 |
US5916819A (en) * | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
MY125856A (en) * | 1997-04-30 | 2006-08-30 | Minnesota Mining & Mfg | Method of planarizing the upper surface of a semiconductor wafer |
JPH1180708A (ja) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
-
2000
- 2000-07-18 WO PCT/US2000/019872 patent/WO2001006553A1/fr not_active Application Discontinuation
- 2000-07-18 JP JP2001510909A patent/JP2003505858A/ja not_active Withdrawn
- 2000-07-18 KR KR1020027000613A patent/KR20020015715A/ko not_active Application Discontinuation
- 2000-07-18 EP EP00950499A patent/EP1212789A1/fr not_active Withdrawn
- 2000-07-18 CN CN00810546A patent/CN1361923A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1212789A1 (fr) | 2002-06-12 |
CN1361923A (zh) | 2002-07-31 |
WO2001006553A1 (fr) | 2001-01-25 |
JP2003505858A (ja) | 2003-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7323421B2 (en) | Silicon wafer etching process and composition | |
CN1696235B (zh) | 阻挡层抛光溶液 | |
US20080053001A1 (en) | Polishing Composition and Polishing Method | |
EP1894978B1 (fr) | Composition de polissage et procédé de polissage | |
WO1996026538A1 (fr) | Solutions chimiques pour enlever les agents contaminants a base de composes metalliques de galettes apres un polissage chimico-mecanique, et procede de nettoyage de galettes | |
CN109716487B (zh) | 表面处理组合物 | |
KR20060051110A (ko) | 연마용 조성물 및 그것을 이용한 연마방법 | |
US20090127501A1 (en) | Polishing Composition for Silicon Wafer | |
US11384256B2 (en) | Polishing method and method for manufacturing semiconductor substrate | |
EP0761599A2 (fr) | Méthode de purification d'une solution alcaline et méthode de décapage de tranches de semi-conducteurs | |
US20080115423A1 (en) | Polishing Composition For Silicon Wafer | |
EP3540761B1 (fr) | Composition de polissage et procédé de polissage de tranche de silicium | |
KR20020015715A (ko) | 실리콘 웨이퍼로의 구리 혼입을 줄이기 위한 연마 혼합물및 그 방법 | |
EP1925648A2 (fr) | Composition de polissage et procédé de polissage | |
US7833435B2 (en) | Polishing agent | |
JP3456466B2 (ja) | シリコンウェーハ用研磨剤及びその研磨方法 | |
US9834703B2 (en) | Polishing composition | |
CN111378377A (zh) | 一种化学机械抛光液及其应用 | |
CN108117840B (zh) | 一种氮化硅化学机械抛光液 | |
JP2000230169A (ja) | 研磨用のスラリー | |
JP2006202932A (ja) | 研磨用組成物、その製造方法及び該研磨用組成物を用いる研磨方法 | |
JPH11186202A (ja) | 半導体シリコンウエーハ研磨用研磨剤及び研磨方法 | |
KR20220040374A (ko) | 연마용 조성물 | |
EP4039767A1 (fr) | Composition de polissage | |
KR101464881B1 (ko) | 금속 제거용 킬레이트제를 포함하는 웨이퍼 세정용 알칼리 수용액 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |