KR20020006888A - Manufacturing method of nozzle plate - Google Patents
Manufacturing method of nozzle plate Download PDFInfo
- Publication number
- KR20020006888A KR20020006888A KR1020000040394A KR20000040394A KR20020006888A KR 20020006888 A KR20020006888 A KR 20020006888A KR 1020000040394 A KR1020000040394 A KR 1020000040394A KR 20000040394 A KR20000040394 A KR 20000040394A KR 20020006888 A KR20020006888 A KR 20020006888A
- Authority
- KR
- South Korea
- Prior art keywords
- nozzle
- nozzle plate
- layer
- silicon wafer
- water repellent
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000005871 repellent Substances 0.000 claims abstract description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 230000002940 repellent Effects 0.000 claims abstract description 43
- 238000007747 plating Methods 0.000 claims abstract description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000010899 nucleation Methods 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 claims description 2
- 230000005499 meniscus Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 16
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/1433—Structure of nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1606—Coating the nozzle area or the ink chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1643—Manufacturing processes thin film formation thin film formation by plating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
본 발명은 잉크젯 프린터 헤드용 노즐 플레이트의 제조방법에 관한 것이다.The present invention relates to a method for producing a nozzle plate for an inkjet printer head.
잉크젯 프린터 헤드에 있어서 잉크공급장치에 함유되어 있던 잉크는 잉크공급관을 통하여 기록장치에 공급되고, 기록장치는 잉크공급장치로부터 공급받은 잉크를 피기록재에 분사하여 인쇄를 행한다. 이때 잉크는 노즐 플레이트에 형성된 노즐을 통하여 피기록재에 분사된다.Ink contained in the ink supply apparatus in the inkjet printer head is supplied to the recording apparatus through an ink supply tube, and the recording apparatus injects ink supplied from the ink supply apparatus onto the recording material to perform printing. At this time, ink is injected onto the recording material through the nozzle formed on the nozzle plate.
잉크는 액적의 형태로 분사되며, 잉크젯 프린터의 인쇄능을 높이기 위해서는 잉크가 완전한 액적의 형태로 안정하게 분사되어야 한다.Ink is ejected in the form of droplets, and in order to increase the printability of the inkjet printer, ink must be stably ejected in the form of complete droplets.
노즐을 제조하기 위하여 종래에는 전주도금법에 의하여 노즐을 형성하는 방법이나 마이크로펀칭과 연마공정에 의하여 노즐을 형성하는 방법을 사용하여 왔다.In order to manufacture the nozzle, conventionally, a method of forming a nozzle by electroplating or a method of forming a nozzle by micropunching and polishing has been used.
전주도금(Electroforming)법에서는 기판에 포토레지스트를 얇게 도포한 후 패터닝한다. 패턴이 형성된 기판을 전해액에 넣고 전류를 흘려주면 도금물질이 성장하게 되며, 사용하고자 하는 노즐의 크기만큼 도금물질이 성장하면 도금을 중지한다. 도금이 완료되면 기판과 기판에 형성된 포토레지스트를 제거함으로써 노즐이 형성된 노즐 플레이트를 완성한다.In electroforming, a thin photoresist is applied to a substrate and then patterned. The plating material is grown by inserting the substrate having the pattern formed into the electrolyte and flowing an electric current. The plating is stopped when the plating material is grown by the size of the nozzle to be used. When the plating is completed, the nozzle plate on which the nozzle is formed is completed by removing the substrate and the photoresist formed on the substrate.
마이크로 펀칭 및 연마공정에 의한 방법에서는 노즐 플레이트로 사용할 금속시트를 마이크로 펀칭핀으로 드로잉하여 금속시트의 반대면 깊이 이상까지 노즐단면을 형성한다. 드로잉 후 금속시트의 돌출된 부분을 연마공정에 의해 제거하고, 연마공정에 의하여 금속시트에 발생하는 거친 표면(burr)은 전해연마나 화학연마에 의하여 제거한다.In the method by the micro punching and polishing process, the metal sheet to be used as the nozzle plate is drawn with the micro punching pin to form the nozzle section up to the depth of the opposite side of the metal sheet. After drawing, the protruding portion of the metal sheet is removed by a polishing process, and the burrs generated on the metal sheet by the polishing process are removed by electropolishing or chemical polishing.
상기의 방법들에 의하여 제조되는 노즐의 출구부위는 잉크젯 프린터 헤드에서 분사되는 잉크액적의 크기, 잉크의 분사성능, 잉크분사의 안정성과 연속분사에 큰 영향을 미치는 중요한 인자이다.The outlet portion of the nozzle manufactured by the above methods is an important factor that greatly affects the size of the ink droplets ejected from the inkjet printer head, the ejection performance of the ink, the stability of the ink ejection, and the continuous ejection.
특히 노즐의 표면성질은 잉크분사의 안정성과 연속분사에 큰 영향을 미친다. 노즐의 표면이 발수성을 가지는 경우에는 잉크가 완전한 액적의 형태로 분사되므로 잉크방울이 피기록재에 착지하는 위치의 정도 또는 산포가 향상되어 인쇄상태가 향상된다. 또한 잉크가 분사된 후 노즐의 출구부위에 형성되는 메니스커스도 안정하다.In particular, the surface quality of the nozzle has a great influence on the stability of ink spraying and continuous spraying. When the surface of the nozzle has water repellency, the ink is ejected in the form of complete droplets, so that the degree or spread of the position where the ink droplets land on the recording material is improved, and the printing state is improved. Also, the meniscus formed at the outlet of the nozzle after the ink is ejected is also stable.
그러나 노즐의 표면이 발수성을 가지지 못하는 경우에는 잉크의 분사가 반복됨으로써 노즐의 표면이 젖게 되는 웨팅(wetting)이 일어나게 된다. 이러한 웨팅현상이 일어나면 잉크가 노즐의 표면에 젖어있는 잉크와 덩어리를 형성하게 되어 잉크가 완전한 액적의 형태를 가지지 못한 채 흘러내리는 방식으로 분사된다. 그 결과 인쇄의 상태가 나쁘고, 잉크의 분사 후 형성되는 메니스커스도 불안정하다.However, when the surface of the nozzle does not have water repellency, the wetting of the surface of the nozzle is wet due to repeated jetting of the ink. When such a wetting phenomenon occurs, the ink forms a lump of ink that is wet on the surface of the nozzle, and the ink is ejected in such a manner that the ink flows down without having a complete droplet form. As a result, the printing state is bad, and the meniscus formed after the ejection of the ink is also unstable.
따라서 잉크젯 프린터 헤드의 신뢰성을 확보하기 위해서는 노즐의 표면을 발수처리하는 것이 필수적이다. 발수처리는 웨팅에 의해 토출방향이 휘어지는 것을 방지하여 안정적인 토출을 가능하게 하고, 메니스커스를 형성하여 기포가 혼입되는 것을 방지하며, 노즐의 표면이 오염되는 것도 방지하는 효과가 있다.Therefore, in order to secure the reliability of the inkjet printer head, it is essential to water repellent the nozzle surface. The water repellent treatment prevents the discharge direction from being bent by the wetting to enable stable discharge, forms a meniscus, prevents bubbles from mixing, and prevents contamination of the surface of the nozzle.
특히 반영구형태의 잉크젯 헤드의 경우는 반복적인 인쇄가 이루어져 노즐부의 표면상태가 인쇄의 신뢰성에 큰 영향을 주게 되므로 발수처리가 매우 중요하다.In particular, in the case of the semi-permanent inkjet head, the water repellent treatment is very important because the repetitive printing is performed and the surface state of the nozzle portion greatly affects the reliability of printing.
일회용 잉크젯 프린터 헤드의 노즐부의 표면을 발수처리하기 위해서 종래에는 일반적으로 금을 도금 또는 증착하는 방법을 사용하거나 불소계열 고분자를 도포하는 방법을 사용하고 있다.In order to water-repellent the surface of the nozzle part of a disposable inkjet printer head, conventionally, the method of plating or depositing gold or the method of apply | coating a fluorine-type polymer is used.
또한 반영구적인 잉크젯 프린터 헤드의 노즐의 표면을 발수처리하기 위하여 종래에는 발수성 물질을 일정조건의 전장이 걸린 도금조에서 도금처리하는 방법을 사용하여 왔다.In addition, in order to water-repellent the surface of the nozzle of the semi-permanent inkjet printer head, conventionally, a method of plating a water-repellent material in a plating bath in which a predetermined length is applied is used.
이때 발수성 물질로는 테플론계 물질이 주로 사용되며, 테플론계 물질중 대표적인 것은 폴리테트라플루오로에틸렌(polytetrafluroethylene, 이하 'PTFE'라 함)이다. 이러한 PTFE를 사용하여 노즐의 표면에 발수처리하기 위해서는 일정조건의 전장이 걸린 도금조에서 PTFE 복합도금처리하는 방법을 사용하고 있다.At this time, a teflon-based material is mainly used as the water repellent material, and a typical one of the teflon-based materials is polytetrafluoroethylene (hereinafter referred to as 'PTFE'). In order to use a water-repellent treatment on the surface of the nozzle using PTFE, a PTFE composite plating process is used in a plating bath in which a certain length of electric field is applied.
이러한 복합도금에 의한 발수처리방법은 방향성이 없으므로, 발수층이 형성되어야 할 노즐의 표면만이 아니라 발수층이 형성되어서는 안될 노즐의 후면까지 도금되어 발수층이 형성된다. 후공정인 잉크젯 프린터 헤드와 접합공정에서 노즐이 잘 접합되기 위해서는 노즐의 후면이 친수성의 높은 표면에너지를 가지는 것이 바람직하다. 따라서 접합이 이루어지는 노즐의 후면에 화학적으로 안정하며 낮은 표면에너지를 가지는 발수층이 형성되면 접합성이 낮아져서 후공정인 잉크젯 프린터 헤드와의 접합공정이 매우 어려워진다.Since the water repellent treatment method by the composite plating is not directed, the water repellent layer is formed by plating not only the surface of the nozzle on which the water repellent layer is to be formed but also the rear surface of the nozzle on which the water repellent layer should not be formed. In order for the nozzle to be well bonded in the subsequent inkjet printer head and the bonding process, it is preferable that the rear surface of the nozzle has a high hydrophilic surface energy. Therefore, when a water-repellent layer having a chemically stable and low surface energy is formed on the back surface of the nozzle to be bonded, the bonding property becomes low, and thus the bonding process with the inkjet printer head which is a post process becomes very difficult.
따라서 복합도금법에 의하여 발수처리를 하는 경우에는 노즐의 후면에 발수층이 형성되는 것을 방지하기 위한 전처리가 추가로 필요하게 된다.Therefore, when the water repellent treatment is performed by the composite plating method, a pretreatment for preventing the water repellent layer from forming on the rear surface of the nozzle is additionally required.
노즐의 표면에만 발수처리를 하기 위해서 종래에는 노즐의 후면에 절연막을 형성한 후 발수층을 도금하여 노즐의 후면에는 발수층이 형성되지 않도록 하고 있으며, 노즐의 후면에 절연막을 형성하는 종래의 방법을 도 1 내지 도 4에 도시하고 있다.In order to perform water repellent treatment only on the surface of the nozzle, conventionally, an insulating film is formed on the rear surface of the nozzle, and then a water repellent layer is plated so that no water repellent layer is formed on the rear surface of the nozzle. 1 to 4 are shown.
노즐에 발수처리를 하기 전에 먼저 노즐(10)의 후면에 절연성 물질을 도포하여 절연막(12)을 형성한다. 절연막의 재료로는 드라이 필름과 같은 폴리머, 이산화규소(SiO2) 등의 부도체가 사용된다. 드라이 필름의 경우 온도, 압력 및 이송속도의 함수로 라미네이션(lamination)하여 코팅하며, 이산화규소의 경우 증착에 의해 박막을 형성한다.Before the water repellent treatment on the nozzle, an insulating material is first applied to the back surface of the nozzle 10 to form an insulating film 12. As the material of the insulating film, a polymer such as a dry film, and a non-conductor such as silicon dioxide (SiO 2 ) is used. In the case of dry film, the coating is laminated by lamination as a function of temperature, pressure and transfer speed, and in the case of silicon dioxide, a thin film is formed by vapor deposition.
절연막을 형성한 후 일반적인 방법인 복합도금처리공정에 의하여 PTFE의 발수층(14)을 노즐(10)의 표면에 형성한다. 노즐(10)의 표면에 발수층(14)을 형성한 후 노즐(10)의 후면에 형성된 절연막(12)을 제거한다.After the insulating film is formed, a water repellent layer 14 of PTFE is formed on the surface of the nozzle 10 by a general plating process. After the water repellent layer 14 is formed on the surface of the nozzle 10, the insulating layer 12 formed on the rear surface of the nozzle 10 is removed.
상기와 같은 종래의 방법에 의하면 노즐의 후면에 발수층이 형성되는 것은 방지할 수 있으나 상기와 같은 종래의 방법에서는 절연막이 형성된 부위에서만 발수층의 형성이 저해되는데, 절연막을 형성하는 과정에서 포토레지스터 등의 절연막이 노즐마다 균일하게 형성되지 못하기 때문에 노즐의 출구부분에서 발수층이 형성되는 깊이가 노즐마다 균일하지 못한 문제점이 있다.According to the conventional method as described above, the water repellent layer may be prevented from being formed on the rear surface of the nozzle. However, in the conventional method as described above, the formation of the water repellent layer is inhibited only at the site where the insulating film is formed. Since the insulating film is not formed uniformly for each nozzle, there is a problem that the depth at which the water repellent layer is formed at the outlet of the nozzle is not uniform for each nozzle.
즉, 절연막이 얕게 형성되는 경우에는 노즐의 출구부분에서 발수층이 형성되는 깊이가 깊어지고, 절연막이 깊게 형성되는 경우에는 반대로 노즐의 출구부분에서 발수층이 형성되는 깊이가 얕아지게 된다.That is, when the insulating film is formed shallowly, the depth at which the water repellent layer is formed at the outlet portion of the nozzle becomes deep, and when the insulating film is formed deep, the depth at which the water repellent layer is formed at the outlet portion of the nozzle becomes shallow.
이와 같이 노즐의 출구부분에서 형성되는 발수층의 깊이가 균일하지 못하면 각 노즐의 메니스커스 높이가 달라지게 되고 이는 토출속도의 불균일성을 유발하여 인쇄상태가 나빠지는 문제점이 있다.As such, if the depth of the water repellent layer formed at the outlet of the nozzle is not uniform, the meniscus height of each nozzle is changed, which causes a non-uniformity of the discharge speed, which causes a problem of deteriorated printing.
상기의 문제점을 해결하기 위한 본 발명은 니켈 이중도금에 의해 노즐의 내부에 균일한 깊이의 발수층이 형성되어 잉크의 토출성능이 향상되는 노즐 플레이트를 제조하는 방법을 제공하는 것을 목적으로 한다.An object of the present invention for solving the above problems is to provide a method of manufacturing a nozzle plate in which a water repellent layer having a uniform depth is formed inside the nozzle by nickel double plating to improve the ejection performance of the ink.
도 1 내지 도 4는 종래의 노즐 플레이트의 발수처리방법의 공정을 도시한 공정도,1 to 4 is a process chart showing a process of a conventional water repellent treatment method of a nozzle plate,
도 5 내지 도 14는 본 발명의 방법의 공정을 도시한 공정도.5-14 are process diagrams showing the process of the method of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 실리콘웨이퍼 12 : 시딩층10 silicon wafer 12 seeding layer
14 : 포토레지스트패턴 16 : 노즐 플레이트14 photoresist pattern 16 nozzle plate
18 : 노즐 20 : 절연막18: nozzle 20: insulating film
24 : 이중도금층 26 : 발수층24: double plating layer 26: water repellent layer
상기의 목적을 달성하기 위한 본 발명은 기판이 되는 실리콘웨이퍼를 제공하는 단계; 상기 실리콘웨이퍼의 표면에 금속으로 된 시딩층을 형성하는 단계; 상기 시딩층의 상부에 포토레지스트를 얇게 도포한 후 패터닝하여 포토레지스트패턴을 형성하는 단계; 상기 실리콘웨이퍼에 니켈을 도금하여 노즐 및 노즐 플레이트를 형성하는 단계; 형성된 노즐 플레이트 뒷면에서 포토레지스트가 있는 면까지 절연막을 형성하는 단계; 기판이 되는 실리콘웨이퍼에서 노즐 플레이트를 탈착시키는 단계; 노즐의 표면에 남은 포토레지스트를 제거하는 단계; 노즐 플레이트의 하부에서 발수층을 형성하고자 하는 깊이만큼 니켈을 이중도금하여 이중도금층을 형성하는 단계; 및 이중도금층이 형성된 노즐 플레이트를 발수처리하는 단계를 포함하는 노즐 플레이트의 제조방법에 관한 것이다.The present invention for achieving the above object comprises the steps of providing a silicon wafer to be a substrate; Forming a seeding layer of metal on a surface of the silicon wafer; Forming a photoresist pattern by coating and patterning a photoresist thinly on the seeding layer; Plating nickel on the silicon wafer to form a nozzle and a nozzle plate; Forming an insulating film from a rear surface of the formed nozzle plate to a surface having a photoresist; Detaching the nozzle plate from the silicon wafer serving as the substrate; Removing the photoresist remaining on the surface of the nozzle; Forming a double plating layer by double plating nickel to a depth to form a water repellent layer under the nozzle plate; And it relates to a nozzle plate manufacturing method comprising the step of water-repellent treatment of the nozzle plate on which the double plating layer is formed.
이하 본 발명에 대하여 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
노즐을 형성하기 위하여 기판이 되는 실리콘웨이퍼를 준비한다.In order to form a nozzle, a silicon wafer serving as a substrate is prepared.
실리콘웨이퍼의 표면에는 도금이 일어날 수 있도록 하기 위하여 도전성 금속을 증착시켜 시딩층을 형성한다.In order to allow plating to occur on the surface of the silicon wafer, a conductive metal is deposited to form a seeding layer.
시딩층은 노즐 플레이트에 남는 것이 아니라 탈착공정에서 노즐 플레이트로부터 분리되어야 하므로, 시딩층의 재료로는 도금이 용이하게 일어날 수 있도록 하면서 적절한 접착력을 가져서 탈착공정에서 용이하게 탈착가능한 니켈-바나듐(Ni-V) 또는 티타늄-백금(Ti-Pt)을 사용하는 것이 바람직하다. 시딩층은 1000-2000Å의 두께로 형성하는 것이 바람직하다.Since the seeding layer should be separated from the nozzle plate in the desorption process rather than remaining on the nozzle plate, the material of the seeding layer can be easily plated with nickel vanadium (Ni-), which is easily detachable in the desorption process while having an appropriate adhesive force. V) or titanium-platinum (Ti-Pt) is preferably used. The seeding layer is preferably formed to a thickness of 1000-2000 kPa.
시딩층의 상부에는 포토레지스트를 얇게 도포한 후 패터닝하여 포토레지스트패턴을 형성한다.On top of the seeding layer, a thin photoresist is applied and patterned to form a photoresist pattern.
포토레지스트패턴이 형성된 실리콘웨이퍼에 니켈도금에 의해 노즐 및 노즐 플레이트를 형성한다. 노즐 및 노즐 플레이트는 실리콘웨이퍼를 니켈이 든 전해액에 넣고 전류를 흘려주어 니켈을 성장시켜 형성하며, 적절한 두께만큼 니켈이 도금되면 도금을 중지한다.A nozzle and a nozzle plate are formed on the silicon wafer on which the photoresist pattern is formed by nickel plating. The nozzle and the nozzle plate are formed by inserting a silicon wafer into an electrolyte containing nickel and flowing a current to grow the nickel. When the nickel is plated to an appropriate thickness, the plating is stopped.
도금이 완료되면 형성된 노즐의 뒷면에 절연막을 형성한다. 절연막은 폴리머나 이산화규소 등의 절연성 물질을 코팅하여 형성하는 것이 바람직하다.When plating is completed, an insulating film is formed on the back side of the formed nozzle. The insulating film is preferably formed by coating an insulating material such as polymer or silicon dioxide.
절연막은 포토레지스트가 있는 면까지 코팅한다. 이때 실리콘웨이퍼에 의해 차폐되므로 노즐 플레이트의 전면에는 절연막이 형성되지 않으며, 노즐의 내부가 모두 절연된 균일한 형상이 얻어진다.The insulating film is coated to the side where the photoresist is located. At this time, since the insulating film is shielded by the silicon wafer, no insulating film is formed on the entire surface of the nozzle plate, and a uniform shape in which all of the inside of the nozzle is insulated is obtained.
노즐의 뒷면에 절연막을 형성한 후에는 기판이 되는 실리콘웨이퍼에서 노즐 플레이트를 탈착시킨다.After the insulating film is formed on the back side of the nozzle, the nozzle plate is detached from the silicon wafer serving as the substrate.
노즐 플레이트를 탈착시킨 후 노즐의 표면에 남은 포토레지스트패턴을 제거한다. 포토레지스트패턴은 스프리퍼(stripper)를 사용하여 제거하는 것이 일반적이다.After removing the nozzle plate, the photoresist pattern remaining on the surface of the nozzle is removed. The photoresist pattern is generally removed using a stripper.
노즐의 내부까지 발수처리가 되도록 하기 위하여 탈착된 노즐 플레이트의 하부에서 다시 니켈을 도금(이중도금)하여 이중도금층을 형성한다. 이때 이중도금층의 두께를 두껍게 하면 발수층이 깊게 형성되며 이중도금층의 두께를 얇게 하면 발수층이 얕게 형성된다. 따라서 이중도금층의 두께를 조절함으로써 발수층이 형성되는 깊이를 조절할 수 있다.In order to perform the water repellent treatment up to the inside of the nozzle, nickel is plated again (double plating) on the lower part of the detached nozzle plate to form a double plating layer. At this time, if the thickness of the double plating layer is thick, the water repellent layer is deeply formed. If the thickness of the double plating layer is thin, the water repellent layer is shallow. Therefore, it is possible to control the depth of the water repellent layer is formed by adjusting the thickness of the double plating layer.
니켈 이중도금에 의해 이중도금층이 형성되면 노즐 플레이트에 발수처리를 한다. 발수처리는 발수성 물질을 노즐에 도금함으로써 이루어지며, 이때 노즐 플레이트의 뒷면은 절연막에 의해 발수층이 형성되지 않는다.When the double plating layer is formed by nickel double plating, the nozzle plate is subjected to water repellent treatment. The water repellent treatment is performed by plating a water repellent material on the nozzle, wherein the back surface of the nozzle plate is not formed by the insulating film.
발수성 물질로는 상기에서 설명한 바와 같이 테플론계 물질을 주로 사용하며, 테플론계 물질중 대표적인 것은 PTFE이다. PTFE를 일정조건의 전장이 걸린 도금조에서 PTFE 복합도금처리하여 발수층을 형성한다.As the water-repellent material, Teflon-based materials are mainly used as described above, and a representative of the Teflon-based materials is PTFE. PTFE is plated with PTFE in an electroplating bath with a constant length to form a water repellent layer.
발수층을 형성한 후 노즐 뒷면의 절연막을 제거한다. 이때 절연막이 친수성 물질로 된 경우에는 절연막을 제거하지 않아도 된다.After forming the water repellent layer, the insulating film on the back of the nozzle is removed. At this time, when the insulating film is made of a hydrophilic material, it is not necessary to remove the insulating film.
도 5 내지 도 14에는 본 발명의 방법의 공정을 개략적으로 도시하고 있다.5 to 14 schematically illustrate the process of the method of the invention.
먼저 실리콘웨이퍼(10)를 준비하고, 실리콘웨이퍼(10)에 시딩층(12)을 형성한다. 시딩층(12)의 상부에 포토레지스트를 도포하고 패터닝하여 포토레지스트패턴(14)을 형성한다.First, the silicon wafer 10 is prepared, and the seeding layer 12 is formed on the silicon wafer 10. The photoresist pattern 14 is formed by applying and patterning a photoresist on the seeding layer 12.
포토레지스트패턴(14)이 형성된 실리콘웨이퍼(10) 상에 니켈을 전주도금하여 노즐(18)과 노즐 플레이트(16)를 형성한다.Nickel is pre-plated on the silicon wafer 10 on which the photoresist pattern 14 is formed to form the nozzle 18 and the nozzle plate 16.
형성된 노즐 플레이트(16)의 뒷면에 절연막(20)을 형성한다. 이때 절연막(20)은 포토레지스트패턴(14)이 형성된 면까지 형성되도록 한다.An insulating film 20 is formed on the back side of the formed nozzle plate 16. In this case, the insulating film 20 is formed to the surface on which the photoresist pattern 14 is formed.
절연막(20)이 형성되면 실리콘웨이퍼(10)에서 노즐 플레이트(16)를 탈착시킨다. 탈착된 노즐 플레이트(16)에서 남아있는 포토레지스트패턴(14)을 제거한다.When the insulating film 20 is formed, the nozzle plate 16 is detached from the silicon wafer 10. The remaining photoresist pattern 14 is removed from the detached nozzle plate 16.
포토레지스트패턴(14)을 제거한 후 노즐 플레이트(16)의 하부에 니켈을 이중도금하여 이중도금층(24)을 형성한다. 적절한 두께의 이중도금층(24)이 형성되면노즐 플레이트(16)를 발수처리하여 발수층(26)을 형성한다.After removing the photoresist pattern 14, a double plating layer 24 is formed by double plating nickel on the lower portion of the nozzle plate 16. When the double plating layer 24 having an appropriate thickness is formed, the nozzle plate 16 is water repelled to form the water repellent layer 26.
발수층(26)을 형성한 후 노즐 플레이트(16)에 형성된 절연막(20)을 제거한다.After the water repellent layer 26 is formed, the insulating film 20 formed on the nozzle plate 16 is removed.
상기와 같은 본 발명의 방법에 의하면 노즐의 내부에 균일하게 발수층이 형성되므로 노즐의 메니스커스 위치를 균일하게 형성할 수 있으며, 따라서 노즐의 수율이 향상된다.According to the method of the present invention as described above, since the water repellent layer is formed uniformly inside the nozzle, the meniscus position of the nozzle can be formed uniformly, and thus the yield of the nozzle is improved.
또한 노즐의 크기가 균일하므로 본 발명의 방법에 의하여 제조된 노즐 플레이트를 적용한 잉크젯 프린터 헤드에서 잉크의 토출성능이 향상되는 효과가 있다.In addition, since the size of the nozzle is uniform, the ink ejection performance of the inkjet printer head to which the nozzle plate manufactured by the method of the present invention is applied is improved.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000040394A KR20020006888A (en) | 2000-07-14 | 2000-07-14 | Manufacturing method of nozzle plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000040394A KR20020006888A (en) | 2000-07-14 | 2000-07-14 | Manufacturing method of nozzle plate |
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| KR20020006888A true KR20020006888A (en) | 2002-01-26 |
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