KR20020002560A - Developer for patterning of resist with high aspect ratio and developing method using the same - Google Patents

Developer for patterning of resist with high aspect ratio and developing method using the same Download PDF

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Publication number
KR20020002560A
KR20020002560A KR1020000036768A KR20000036768A KR20020002560A KR 20020002560 A KR20020002560 A KR 20020002560A KR 1020000036768 A KR1020000036768 A KR 1020000036768A KR 20000036768 A KR20000036768 A KR 20000036768A KR 20020002560 A KR20020002560 A KR 20020002560A
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South Korea
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solution
developing
wafer
resist
aspect ratio
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KR1020000036768A
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Korean (ko)
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이희목
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박종섭
주식회사 하이닉스반도체
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Priority to KR1020000036768A priority Critical patent/KR20020002560A/en
Publication of KR20020002560A publication Critical patent/KR20020002560A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: Provided is an apparatus for developing resist pattern which can attain a high aspect ratio of 5:1 or more, thereby being capable of patterning a micro pattern without a hard mask or etching barrier in a simple process. Also a developing method of a resist pattern with a high aspect ratio is provided. CONSTITUTION: The apparatus includes (i) a reservoir(11) for containing a developing solution and rinse solution; (ii) an inlet(12) for injecting the developing solution and rinse solution to the reservoir; (iii) an outlet(13) for discharging the used developing solution and rinse solution; and (iv) a wafer chuck(14) for fixing a wafer(10) in a fashion that the surface having a resist pattern formed faces downward and rotating the wafer developed and rinsed in the reservoir to be dried. The method for developing a resist pattern using the apparatus comprises steps of (i) injecting a developing solution to the reservoir(11) through the inlet(12); (ii) developing a resist pattern on the wafer(10) by the developing solution; (iii) discharging the used developing solution through the outlet(13); (iv) injecting a rinse solution to the reservoir(11) through the inlet(12) to rinse the wafer; (v) discharging the used rinse solution through the outlet(13); and (vi) drying the wafer(10).

Description

높은 애스펙트비를 갖는 레지스트 패터닝용 현상장치 이를 이용한 현상방법{Developer for patterning of resist with high aspect ratio and developing method using the same}Developer for patterning resist with high aspect ratio Development method using the same {developer for patterning of resist with high aspect ratio and developing method using the same}

본 발명은 반도체소자 제조장비 및 제조방법에 관한 것으로, 특히 높은 애스팩트비(Aspect ratio)를 갖는 레지스트의 패터닝에 사용되는 현상장치(Developer) 및 이를 이용한 레지스트패턴 현상방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus and a manufacturing method, and more particularly, to a developer used for patterning a resist having a high aspect ratio and a resist pattern developing method using the same.

종래의 현상장치는 도 1에 나타낸 바와 같이 웨이퍼(1)를 진공(5)으로 고정하는 웨이퍼 척(wafer chuck)부와 노즐부(3)(즉, 현상액(developer)의 분사노즐, 패턴 DI린스를 위한 DI 분사노즐, 그리고 웨이퍼 뒷면 린스를 위한 DI 분사노즐로 구성됨), 및 현상시 현상액 및 DI의 드레인 가이드 역할을 하는 컵부(4)로 구성되어 있다. 도 1에서 미설명부호 '6'은 웨이퍼 뒷면 린스를 위한 장치이다.In the conventional developing apparatus, as shown in FIG. 1, the wafer chuck portion and the nozzle portion 3 (that is, the spray nozzle of the developer, the pattern DI rinse) that fix the wafer 1 to the vacuum 5 are used. It consists of a DI injection nozzle for, and a DI injection nozzle for rinsing the back side of the wafer), and a cup part 4 serving as a drain guide of the developer and DI during development. In FIG. 1, reference numeral 6 denotes a device for rinsing the back side of the wafer.

그런데 종래의 방법으로 현상을 할 경우, 노광된 레지스트(포지티브형 레지스트)가 현상액에 용해된 후, 패턴과 패턴 사이에 존재하는 용액이 DI 린스 및 건조단계에서 고속으로 회전할 경우, 용액의 회전운동력에 의해 패턴이 쓰러지는 현상이 발생한다. 이는 근본적으로 종래 방법에서 사용하는 회전 린스 및 건조 단계에 기인한 것으로, 웨이퍼 표면과 레지스트 계면 특성과 부합되어 패턴크기 0.1μm이하, 그리고 애스펙트비가 3:1 이상이 되는 미세 패터닝시 이러한 레지스트의 쓰러짐 현상은 악화된다. 도 2a 및 도 2b는 종래 기술에서 현상공정 후, 레지스트 패턴이 쓰러지는 현상을 보인 것으로, 도 2a는 현상공정에서 회전 린스 및 건조 단계 전에 노광된 부분이 용해되어 레지스트가 패터닝된 상태이고, 도 2b는 고속 회전린스 및 건조시 용액의 회전운동력에 의해 레지스트 패턴이 무너진 상태이다.However, in the case of developing by the conventional method, after the exposed resist (positive resist) is dissolved in the developing solution, when the solution existing between the pattern and the pattern rotates at high speed in the DI rinse and drying step, the rotational motion force of the solution This causes the pattern to collapse. This is fundamentally due to the rotational rinse and drying steps used in the conventional methods, and the resist collapse of the pattern during fine patterning with a pattern size of 0.1 μm or less and an aspect ratio of 3: 1 or more in accordance with the wafer surface and resist interface characteristics. Gets worse. 2A and 2B illustrate a phenomenon in which a resist pattern collapses after a developing process in the prior art. FIG. 2A illustrates a state in which a resist is patterned by dissolving a portion exposed before rotational rinsing and drying in a developing process. The resist pattern is collapsed due to the rotational kinetic force of the solution at high speed rinsing and drying.

본 발명은 상기 종래기술의 문제점을 해결하기 위하여 안출된 것으로서, 웨이퍼를 용액조(Bath)에 담가 현상용액에 의해 노광된 부분을 용해 및 린스한 후, 웨이퍼를 그 상태에서 회전시켜 건조함으로써 용액의 회전력을 최소화하여 높은 애스펙트비의 미세 패턴을 무너뜨리는 일없이 현상할 수 있는 현상장치 및 이를 이용한 현상방법을 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, by dipping a wafer in a bath, dissolving and rinsing a portion exposed by a developing solution, and then rotating the wafer in that state to dry the solution. It is an object of the present invention to provide a developing apparatus and a developing method using the same, which can be developed without minimizing rotational force and breaking down a high aspect ratio fine pattern.

도 1은 종래의 레지스트 패턴 현상장치를 나타낸 개략도,1 is a schematic view showing a conventional resist pattern developing apparatus;

도 2a 및 도 2b는 종래의 현상장치를 사용한 경우의 문제점을 나타낸 도면,2A and 2B are views showing a problem when a conventional developing apparatus is used;

도 3은 본 발명에 의한 레지스트 패턴 현상장치를 나타낸 개략도,3 is a schematic view showing a resist pattern developing apparatus according to the present invention;

도 4a 내지 도 4d는 본 발명에 의한 레지스트 패턴 현상장치를 이용한 현상공정을 나타낸 도면.4A to 4D are views showing a developing process using the resist pattern developing apparatus according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1, 10 : 웨이퍼 3 : 노즐부1, 10: wafer 3: nozzle part

4 : 컵부 5 : 진공장치4 cup portion 5 vacuum device

6 : 웨이퍼 뒷면 린스장치 11 : 용액조6: wafer backside rinsing apparatus 11: solution bath

12 : 주입구 13 : 배출구12: inlet 13: outlet

14 : 웨이퍼 척 15 : 현상액14 wafer chuck 15 developer

16 : 린스액16: rinse liquid

상기 목적을 달성하기 위하여 본 발명은 현상용액 및 린스액을 담기 위한 용액조, 상기 현상용액 및 린스액을 용액조에 주입하기 위한 주입구, 사용한 후의 현상용액 및 린스액을 배출하기 위한 배출구, 및 레지스트 패턴이 형성된 웨이퍼의 면이 밑으로 가도록 고정시키며, 상기 용액조에서 현상 및 린스한 후, 웨이퍼를 회전시켜 건조시키기 위한 웨이퍼 척을 포함하여 구성된 높은 애스펙트비를 갖는 레지스트 패터닝용 현상장치를 제공한다.In order to achieve the above object, the present invention provides a solution bath for containing a developing solution and a rinse solution, an inlet for injecting the developing solution and a rinse solution into the solution bath, an outlet for discharging the developing solution and the rinse solution after use, and a resist pattern. The development of the resist patterning apparatus having a high aspect ratio comprising a wafer chuck for fixing the surface of the formed wafer to face downward, developing and rinsing in the solution bath, and then rotating and drying the wafer.

상기 목적을 달성하기 위하여 본 발명은 상기의 레지스트 패터닝용 현상장치를 이용한 높은 애스펙트비를 갖는 레지스트패턴의 현상방법에 있어서, 상기 용액조에 상기 주입구를 통해 소정의 현상용액을 주입하는 단계와, 상기 현상용액에 의해 상기 웨이퍼상의 레지스트 패턴을 현상하는 단계, 레지스트 현상 후, 상기 현상용액을 상기 배출구를 통해 배출하는 단계, 린스액을 상기 주입구를 통해 용액조에 주입하여 웨이퍼를 린스하는 단계, 린스 후, 린스액을 배출구를 통해 배출하는 단계, 및 웨이퍼를 건조시키는 단계를 포함하는 높은 애스펙트비 레지스트 패터닝용 현상방법을 제공한다.In order to achieve the above object, the present invention provides a method of developing a resist pattern having a high aspect ratio using the above-described resist patterning developing device, comprising: injecting a predetermined developing solution into the solution tank through the injection hole; Developing the resist pattern on the wafer by a solution, after resist development, discharging the developing solution through the outlet, injecting a rinse solution into the solution tank through the inlet, and rinsing the wafer, after rinsing It provides a developing method for high aspect ratio resist patterning comprising the step of discharging the liquid through the outlet, and drying the wafer.

이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.

본 발명은 기존의 방식에서 웨이퍼 위에 현상용액이 존재하고 있는 상태에서 회전운동함에 따른 레지스트패턴의 무너짐 현상을 방지하기 위해 웨이퍼를 거꾸로 용액조에 담가 현상용액에 노광된 레지스트부분을 용해 및 린스한 후, 웨이퍼를 이 상태에서 회전하여 건조시킴으로써 용액의 회전운동력을 최소화하여 높은 애스펙트비(3:1 이상)의 미세패턴(0.1μm)을 무너뜨리는 일없이 현상하는 현상장치를 제공한다.According to the present invention, after dissolving and rinsing the resist portion exposed to the developing solution by dipping the wafer upside down in a solution bath to prevent the resist pattern from collapsing due to the rotational movement in the state where the developing solution is present on the wafer in the conventional manner. By rotating and drying the wafer in this state, it is possible to provide a developing apparatus which minimizes the rotational movement force of the solution and develops without breaking down the fine pattern (0.1 μm) having a high aspect ratio (3: 1 or more).

본 발명의 현상장치의 개략도를 도 3에 도시하였다. 도 3에 나타낸 바와 같이 본 발명의 현상장치는 현상용액 및 DI(순수)린스액을 채울 수 있는 용액조(Bath)(11)와, 상기 용액을 용액조(11)에 주입하기 위한 주입구(12), 사용한 후의 용액을 배출하기 위한 배출구(13), 웨이퍼(10)를 고정시키며, 용액조(11)에서 현상 및 린스한 후, 웨이퍼를 회전시켜 건조시키기 위한 웨이퍼 척(14)으로 구성된다.The schematic diagram of the developing apparatus of this invention is shown in FIG. As shown in FIG. 3, the developing apparatus of the present invention includes a solution bath 11 capable of filling a developing solution and a DI (pure) rinse solution, and an injection port 12 for injecting the solution into the solution bath 11. ), And a discharge chuck 13 for discharging the used solution and the wafer 10 are fixed, and after developing and rinsing in the solution tank 11, the wafer chuck 14 for rotating and drying the wafer.

즉, 본 발명에 의한 현상장치를 사용할 경우, 기존 방식에서 현상용액 및 DI린스용액이 웨이퍼상에 놓인 상태에서 고속 회전 건조시킴에 따른 용액의 회전력에 의한 레지스트패턴의 무너짐 현상을 웨이퍼를 뒤집어서 현상, 린스 및 건조함으로써 용액에 의한 영향을 최소화 할 수 있고, 애스펙트비 3:1 이상의 0.1μm이하의 미세패턴을 무너짐 현상없이 패터닝할 수 있다.That is, in the case of using the developing apparatus according to the present invention, the phenomenon of the resist pattern collapse due to the rotational force of the solution caused by the high-speed rotation drying while the developing solution and the DI rinse solution are placed on the wafer is developed by turning the wafer upside down. By rinsing and drying, the influence of the solution can be minimized, and the micropattern having an aspect ratio of 3: 1 or more and 0.1 μm or less can be patterned without collapse.

본 발명의 현상장치를 이용하여 미세 레지스트패턴을 현상하는 과정을 도 4a 내지 도 4d를 참조하여 설명하면 다음과 같다.The process of developing the fine resist pattern using the developing apparatus of the present invention will be described with reference to FIGS. 4A to 4D.

먼저, 도 4a에 나타낸 바와 같은 본 발명의 현상장치의 용액조(11)에 도 4b에 나타낸 바와 같이 주입구(12)를 통해 현상액(15)을 주입한다.First, the developing solution 15 is injected into the solution tank 11 of the developing apparatus of this invention as shown in FIG. 4A through the injection hole 12 as shown in FIG. 4B.

이어서 상기 현상액(15)에 의해 웨이퍼(10)상의 미세패턴을 현상한 후, 현상액을 배출구(13)를 통해 배출한 다음, 도 4c에 나타낸 바와 같이 DI린스액(16)을 주입구(12)를 통해 주입하여 린스공정을 실시한다.Subsequently, after the fine pattern on the wafer 10 is developed by the developer 15, the developer is discharged through the discharge port 13, and then the DI rinse solution 16 is injected into the injection hole 12 as shown in FIG. 4C. Rinsing process is performed by injection.

다음에 도 4d에 나타낸 바와 같이 상기 린스 공정후, DI린스액을 배출구(13)를 통해 배출한 다음, 웨이퍼 척(14)을 이용하여 웨이퍼(10)를 회전시켜 건조시킨다.Next, as shown in FIG. 4D, after the rinse step, the DI rinse liquid is discharged through the discharge port 13, and then the wafer 10 is rotated and dried using the wafer chuck 14.

상기와 같은 회전 건조 대신에 N2등과 같은 기체를 이용하여 건조를 행하여 웨이퍼 상에 남아 있는 용액을 제거할 수도 있다.Instead of the above-mentioned rotary drying, drying may be performed using a gas such as N 2 to remove the solution remaining on the wafer.

이렇듯 본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.As described above, although the technical idea of the present invention has been described in detail according to the above-described preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

종래의 현상장치를 이용할 경우에는 레지스트 두께에 대한 패턴크기의 비, 즉, 애스펙트비를 패턴 쓰러짐 현상으로 인해 3:1 이상으로 설정하는데 어려움이 있어 0.1μm 이하의 패턴과 같이 패턴크기가 매우 작은 미세패턴이 경우, 레지스트 두께도 낮아져 식각시 선택비 확보를 위한 하드마스크 사용이 필요하다. 그러나 본 기술을 적용할 경우, 애스펙트비를 5:1 이상으로 확보할 수 있을 것으로 예상되며, 이에 따라 하드마스크와 같은 식각 배리어층이 필요없게 되어 미세패터닝 공정을 단순화시킬 수 있다.In the case of using a conventional developing apparatus, it is difficult to set the ratio of the pattern size to the resist thickness, that is, the aspect ratio, to 3: 1 or more due to the pattern collapse phenomenon, so that the pattern size is very small, such as a pattern of 0.1 μm or less. In the case of a pattern, the resist thickness is also lowered, so a hard mask is required to secure a selectivity during etching. However, this technique is expected to achieve an aspect ratio of 5: 1 or more, thereby simplifying the micropatterning process by eliminating the need for an etching barrier layer such as a hard mask.

Claims (4)

현상용액 및 린스액을 담기 위한 용액조;A solution tank for containing a developing solution and a rinse solution; 상기 현상용액 및 린스액을 용액조에 주입하기 위한 주입구;An inlet for injecting the developing solution and the rinse solution into the solution tank; 사용한 후의 현상용액 및 린스액을 배출하기 위한 배출구; 및An outlet for discharging the developing solution and the rinse solution after use; And 레지스트 패턴이 형성된 웨이퍼의 면이 밑으로 가도록 고정시키며, 상기 용액조에서 현상 및 린스한 후 웨이퍼를 회전시켜 건조시키기 위한 웨이퍼 척A wafer chuck for fixing a surface of a wafer on which a resist pattern is formed to face downward, and developing and rinsing in the solution bath to rotate and dry the wafer. 을 구비하는 높은 애스펙트비를 갖는 레지스트 패터닝용 현상장치.A developing apparatus for resist patterning having a high aspect ratio having a. 상기 제1항의 레지스트 패터닝용 현상장치를 이용한 높은 애스펙트비를 갖는 레지스트패턴의 현상방법에 있어서,In the method of developing a resist pattern having a high aspect ratio using the developer for resist patterning according to claim 1, 상기 용액조에 상기 주입구를 통해 소정의 현상용액을 주입하는 단계;Injecting a predetermined developing solution into the solution tank through the injection hole; 상기 현상용액에 의해 상기 웨이퍼상의 레지스트 패턴을 현상하는 단계;Developing a resist pattern on the wafer with the developing solution; 레지스트 현상 후, 상기 현상용액을 상기 배출구를 통해 배출하는 단계;After resist development, discharging the developing solution through the outlet; 린스액을 상기 주입구를 통해 용액조에 주입하여 웨이퍼를 린스하는 단계;Rinsing the wafer by injecting a rinse solution into the solution bath through the injection hole; 린스 후, 린스액을 배출구를 통해 배출하는 단계; 및After rinsing, discharging the rinse liquid through the outlet; And 웨이퍼를 건조시키는 단계Drying the Wafer 를 포함하는 높은 애스펙트비 레지스트 패터닝용 현상방법.A developing method for high aspect ratio resist patterning comprising. 제2항에 있어서,The method of claim 2, 상기 건조시키는 단계는,The drying step, 상기 웨이퍼 척을 이용하여 웨이퍼를 회전시켜 수행하는 것을 특징으로 하는 높은 애스펙트비를 갖는 레지스트 패터닝용 현상방법.A development method for resist patterning having a high aspect ratio, characterized in that the wafer is rotated using the wafer chuck. 제2항에 있어서,The method of claim 2, 상기 건조시키는 단계는,The drying step, N2가스를 이용하여 수행하는 것을 특징으로 하는 높은 애스펙트비를 갖는 레지스트 패터닝용 현상방법.A developing method for resist patterning having a high aspect ratio, which is performed using N 2 gas.
KR1020000036768A 2000-06-30 2000-06-30 Developer for patterning of resist with high aspect ratio and developing method using the same KR20020002560A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115903396A (en) * 2022-11-15 2023-04-04 江苏华兴激光科技有限公司 Micro-nano structure and preparation method thereof

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Publication number Priority date Publication date Assignee Title
US4902608A (en) * 1987-12-17 1990-02-20 Texas Instruments Incorporated Immersion development and rinse machine and process
JPH03132013A (en) * 1989-10-18 1991-06-05 Fujitsu Ltd Developing apparatus
JPH11162912A (en) * 1997-11-25 1999-06-18 Miyagi Oki Denki Kk Wafer cleaning apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902608A (en) * 1987-12-17 1990-02-20 Texas Instruments Incorporated Immersion development and rinse machine and process
JPH03132013A (en) * 1989-10-18 1991-06-05 Fujitsu Ltd Developing apparatus
JPH11162912A (en) * 1997-11-25 1999-06-18 Miyagi Oki Denki Kk Wafer cleaning apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115903396A (en) * 2022-11-15 2023-04-04 江苏华兴激光科技有限公司 Micro-nano structure and preparation method thereof

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