KR200198452Y1 - Gas supply apparatus - Google Patents
Gas supply apparatus Download PDFInfo
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- KR200198452Y1 KR200198452Y1 KR2019970037638U KR19970037638U KR200198452Y1 KR 200198452 Y1 KR200198452 Y1 KR 200198452Y1 KR 2019970037638 U KR2019970037638 U KR 2019970037638U KR 19970037638 U KR19970037638 U KR 19970037638U KR 200198452 Y1 KR200198452 Y1 KR 200198452Y1
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- South Korea
- Prior art keywords
- gas supply
- inner tube
- gas
- deposition
- elevator
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 증착장비의 가스공급장치에 관한 것으로서, 종래 플랜지의 일측에 고정되어 인너튜브의 일측 방향으로 반응가스를 공급하는 가스공급장치와 달리, 인너튜브의 중심하부에 위치하는 장소인 엘리베이터의 중앙부에 설치되어, 회전하면서 분지관을 통해 여러 방향으로 반응가스를 공급하도록 구성함으로써 반응가스를 증착이 일어나는 공간인 인너튜브의 내부 전역에 고루 공급함에 의해 증착균일도를 향상시킬 수 있도록 한 것이다.The present invention relates to a gas supply apparatus of a deposition apparatus, unlike a gas supply apparatus which is fixed to one side of a conventional flange and supplies a reaction gas in one direction of an inner tube, the center portion of an elevator, which is located below the center of the inner tube. It is installed in, to rotate and supply the reaction gas in various directions through the branch pipe by supplying the reaction gas evenly throughout the interior of the inner tube, the space where the deposition takes place to improve the deposition uniformity.
Description
본 고안은 증착장비의 가스공급장치에 관한 것으로서, 특히 반응가스를 반응이 일어나는 인너튜브의 내부로 골고루 공급하여 증착균일도를 향상시키는데 적합한 증착 장비의 가스공급장치에 관한 것이다.The present invention relates to a gas supply apparatus of a deposition apparatus, and more particularly, to a gas supply apparatus of a deposition apparatus suitable for improving the deposition uniformity by supplying the reaction gas evenly into the inner tube where the reaction takes place.
제1도는 종래의 일반적인 증착장비의 구조를 도시한 장치도로서, 이에 도시한 바와 같이, 일반적으로 종래의 증착장비는 원주형의 플랜지(1) 상측에 아웃터튜브(2)가 결합되고, 상기 아웃터튜브(2)의 내부에는 인너튜브(3)가 설치되며, 수십 내지 수백장의 웨이퍼(W)를 수납한 보트(4)가 엘리베이터(5)의 상측에 고정되어 엘리베이터(5)의 상승에 의해 함께 상승하여 상기 인너튜브(3)의 내부에 위치할 수 있도록 구성된다.FIG. 1 is a device diagram showing a structure of a conventional general deposition equipment. As shown in the drawing, in general, the conventional deposition equipment includes an outer tube 2 coupled to an upper side of a cylindrical flange 1, and the outer An inner tube 3 is installed inside the tube 2, and a boat 4 containing tens to hundreds of wafers W is fixed to an upper side of the elevator 5 to be lifted by the elevator 5 together. It is configured to be raised and positioned inside the inner tube (3).
상기 엘리베이터(5)의 상측에는 오링(6)이 설치되어 엘리베이터(5)가 상승하면 플랜지(1)의 하부를 엘리베이터(5)가 밀봉할 수 있도록 되며, 상기 플랜지(1)의 일측에는 반응가스가 인너튜브(3)의 내부로 유입될 수 있도록 가스공급관(7)에 연결된 가스 공급노즐(7a)이 설치되고, 그 반대쪽으로는 반응에 사용된 가스가 배출될 수 있도록 가스배출관(8)이 플랜지(1)의 일측에 연결 설치되게 된다.O-ring (6) is installed on the upper side of the elevator (5) and when the elevator (5) rises so that the elevator (5) can seal the lower part of the flange (1), the reaction gas on one side of the flange (1) The gas supply nozzle 7a connected to the gas supply pipe 7 is installed so that the gas flows into the inner tube 3, and the gas discharge pipe 8 is provided on the opposite side so that the gas used for the reaction can be discharged. It is connected to one side of the flange (1).
상기한 바와 같은 구조로 되는 종래의 증착장비는 수십내지 수백장의 웨이퍼(W)를 수납한 보트(4)가 엘리베이터(5)의 상승과 함께 인너튜브(3)의 내부로 로딩되고 엘리베이터(5)가 플랜지(1)의 하부를 오링(6)에 의해 밀봉한 후에, 상기 가스공급노즐(7a)을 통해 반층가스가 인너튜브(3)의 내부로 유입되어 웨이퍼(W)의 표면에서 반응이 진행되어 중착이 일어나게 되고 아울러 잔존가스등은 가스배출관(8)을 통해 외부로 빠져나가는 것에 의해 작용을 행하였다.In the conventional deposition apparatus having the structure as described above, the boat (4) containing tens to hundreds of wafers (W) is loaded into the inner tube (3) with the lift of the elevator (5) and the elevator (5) After the bottom of the flange 1 is sealed by the O-ring 6, the half-layer gas flows into the inner tube 3 through the gas supply nozzle 7a, and the reaction proceeds on the surface of the wafer W. As a result, the neutralization occurred, and the remaining gas and the like acted by escaping to the outside through the gas discharge pipe 8.
그런데 상기한 바와 같은 구조로 되는 종래의 증착장비에서는 반응가스를 공급하는 가스공급노즐(7a)이 플랜지(1)의 일측벽에 고정된 채 연결되어 있어서 반응이 일어나는 공간인 인너튜브(3)의 전역에 골고루 반응가스를 공급하지 못하게 되고 이에 따라 반응가스의 밀도가 높은 부분의 증착막의 두께가 두꺼워지는 등으로 증착균일도가 좋지 않게 되는 문제점이 있었다.However, in the conventional deposition apparatus having the structure as described above, the gas supply nozzle 7a for supplying the reaction gas is connected to one side wall of the flange 1 and is fixed to the inner tube 3. There was a problem in that the uniformity of the deposition was not good because the reaction gas was not evenly supplied to the entire area, and thus the thickness of the deposition film in the high density of the reaction gas became thick.
따라서 상기한 바와 같은 문제점을 인식하여 안출된 본 고안의 목적은 반응가스를 반응이 일어나는 인너튜브의 내부로 골고루 공급하여 증착균일도를 향상시키는데 적합한 증착장비의 가스공급장치를 제공하고자 하는 것이다.Therefore, the object of the present invention devised in recognition of the problems described above is to provide a gas supply device of the deposition equipment suitable for improving the uniformity of the deposition by supplying the reaction gas evenly into the inner tube in which the reaction takes place.
제1도는 종래의 일반적인 증착장비의 구조를 도시한 장치도.1 is a device diagram showing the structure of a conventional general deposition equipment.
제2도는 본 고안의 일실시례에 의한 증착장비의 가스공급장치를 보인 사시도.2 is a perspective view showing a gas supply apparatus of a deposition apparatus according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 플랜지 2 : 아웃터튜브1 Flange 2 Outer tube
3 : 인너튜브 4 : 보트3: inner tube 4: boat
5 : 엘리베이터 6 : 오링5: elevator 6: O-ring
7 : 가스공급관 7a,10 : 가스공급노즐7 gas supply pipe 7a, 10 gas supply nozzle
8 : 가스배출관 10a : 주관8: gas discharge pipe 10a: main pipe
10b : 분지관 W : 웨이퍼10b: branch pipe W: wafer
상기한 바와 같은 본 고안의 목적을 달성하기 위하여, 다수개의 웨이퍼가 보트에 탑재된 상태로 장입되는 종형 증착장비의 엘리베이터 상면 중앙부에 회전가능하게 설치되며 가스공급관과 연결되는 주관과, 상기 주관의 상단이 분지되어 외측을 향하여 상향 경사지게 형성된 수개의 분지관과, 상기 주관을 회전시키는 회전수단을 포함하여 구성됨을 특징으로 하는 증착장비의 가스공급장치가 제공된다.In order to achieve the object of the present invention as described above, the main pipe is rotatably installed in the center of the upper surface of the elevator of the vertical deposition equipment loaded with a plurality of wafers mounted on the boat and connected to the gas supply pipe, the top of the main pipe The gas supply apparatus of the deposition apparatus is provided, which comprises a branched branch and several branch pipes formed to be inclined upward toward the outside, and rotating means for rotating the main pipe.
이하, 첨부도면에 도시한 본 고안의 일실시례에 의거하여 본 고안을 상세히 설명한다.Hereinafter, the present invention will be described in detail based on an embodiment of the present invention shown in the accompanying drawings.
제2도는 본 고안의 일실시례에 의한 증축장비의 가스공급장치를 보인 사시도로서, 이에 도시한 바와 같이, 본 고안에 의한 증착장비의 가스공급장치(10)는 가스공급관(미도시)에 연결되어 반응가스를 통과시키는 주관(10a)과, 상기 주관(10a)의 상단이 분지되어 벌어지며 형성된 수개의 분지관(1Ob)을 포함하여 구성되어 증착장비의 엘리베이터(5) 상면 중앙부에 설치되게 된다. 그리고 소정의 회전수단(미도시)에 의해 상기한 구성으로 되는 가스공급장치(10)가 회전하며 반웅가스를 인너튜브(미도시)의 내부로 공급하도록 구성되게 된다.2 is a perspective view showing a gas supply device of the expansion equipment according to an embodiment of the present invention, as shown, the gas supply device 10 of the deposition equipment according to the present invention is connected to a gas supply pipe (not shown) The main pipe (10a) through which the reaction gas passes, and the upper end of the main pipe (10a) is formed by branching and forming a plurality of branch pipes (10b) formed to be installed in the center of the upper surface of the elevator 5 of the deposition equipment . In addition, the gas supply device 10 having the above-described configuration is rotated by a predetermined rotation means (not shown) to supply the reaction gas into the inner tube (not shown).
상기한 바와 같은 구조로 되는 증착장비의 가스공급장치(10)를 구비한 증착장비는 수십내지 수백장의 웨이퍼를 수납한 보트가 엘리베이터(5)의 상승과 함께 인너튜브의 내부로 로딩되고 엘리베이터(5)가 플랜지의 하부를 밀봉한 후에, 엘리베이터(5)의 상면 중앙부에 설치된 상기 가스공급장치(10)가 회전하면서 반응가스를 인너튜브의 내부로 공급시키게 되어 이러한 반응가스에 의해 웨이퍼의 표면에서 반응이 진행되어 증착이 일어나게 되고 아울러 잔존가스등은 가스배출관을 통해 외부로 빠져나가는 것에 의해 작용을 행하게 된다.In the vapor deposition apparatus having the gas supply device 10 of the vapor deposition apparatus having the structure as described above, a boat containing tens to hundreds of wafers is loaded into the inner tube with the lift of the elevator 5 and the elevator 5 After sealing the lower part of the flange, the gas supply device 10 installed in the center of the upper surface of the elevator (5) rotates to supply the reaction gas into the inner tube to react on the surface of the wafer by the reaction gas. This progresses and vaporization occurs, and the remaining gas and the like act by exiting to the outside through the gas discharge pipe.
상기한 바와 같은 구조로 되는 본 고안에 의한 증착장비의 가스공급장치는, 종래 플랜지의 일측에 고정되어 인너튜브의 일측 방향으로 반응가스를 공급하는 가스공급장치와 달리, 인너튜브의 중심하부에 위치하는 장소인 엘리베이터의 중앙부에 설치되어 회전하면서 분지관을 통해 여러 방향으로 반응가스를 공급하게 되므로 반응가스를 증착이 일어나는 공간인 인너튜브의 내부 전역에 고루 공급할 수 있어 증착균일도를 향상시킬 수 있는 효과가 있다.The gas supply device of the deposition apparatus according to the present invention having the structure as described above, is fixed to one side of the conventional flange, unlike the gas supply device for supplying the reaction gas in one direction of the inner tube, located in the lower center of the inner tube It is installed at the center of the elevator, which is the place where it rotates, and supplies the reaction gas in various directions through the branch pipe, so that the reaction gas can be evenly supplied throughout the inner tube, which is the space where the deposition takes place, and thus the deposition uniformity can be improved. There is.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970037638U KR200198452Y1 (en) | 1997-12-16 | 1997-12-16 | Gas supply apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970037638U KR200198452Y1 (en) | 1997-12-16 | 1997-12-16 | Gas supply apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990025131U KR19990025131U (en) | 1999-07-05 |
| KR200198452Y1 true KR200198452Y1 (en) | 2000-12-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970037638U KR200198452Y1 (en) | 1997-12-16 | 1997-12-16 | Gas supply apparatus |
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| Country | Link |
|---|---|
| KR (1) | KR200198452Y1 (en) |
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1997
- 1997-12-16 KR KR2019970037638U patent/KR200198452Y1/en not_active IP Right Cessation
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| KR19990025131U (en) | 1999-07-05 |
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