KR200180663Y1 - Temperature control apparatus for top cover plate of processing chamber - Google Patents
Temperature control apparatus for top cover plate of processing chamber Download PDFInfo
- Publication number
- KR200180663Y1 KR200180663Y1 KR2019940024904U KR19940024904U KR200180663Y1 KR 200180663 Y1 KR200180663 Y1 KR 200180663Y1 KR 2019940024904 U KR2019940024904 U KR 2019940024904U KR 19940024904 U KR19940024904 U KR 19940024904U KR 200180663 Y1 KR200180663 Y1 KR 200180663Y1
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- South Korea
- Prior art keywords
- temperature
- thermostat
- polymer
- temperature control
- deposition
- Prior art date
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- 238000000034 method Methods 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 230000007257 malfunction Effects 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
본 고안은 폴리머 증착으로 인한 파티클이 발생되는 것을 방지하는 폴리머 증착방지용 온도조절 장치에 관한 것으로, 반도체 제조공정을 수행하는 공정 챔버에 구비된 히터패드의 중앙부에 장착되어 그의 히팅온도가 85℃~95℃ 사이가 되도록 조절하는 써머스탯; 상기 써머스탯의 일측부에 장착되어 그의 동작불량에 따라 소정온도 이상 상승시 자동적으로 차단하는 온도차단수단을 구비하여 세정주기를 증가시킬 수 있으며, 탑 리드 및 가스분사판에 증착되는 폴리머 덩어리의 발생을 방지하므로서 런 웨이퍼의 손상을 방지할 수 있는 효과가 있다.The present invention relates to a temperature control device for preventing the deposition of polymer due to the generation of particles due to the deposition of the polymer, and is mounted on the center of the heater pad provided in the process chamber for performing a semiconductor manufacturing process, its heating temperature is 85 ℃ ~ 95 Thermostat adjusted to be between ℃; Mounted on one side of the thermostat is provided with a temperature blocking means for automatically blocking when the temperature rises above a predetermined temperature in accordance with its malfunction can increase the cleaning cycle, the generation of polymer mass deposited on the top lead and gas injection plate This prevents damage to the run wafers.
Description
제1도는 종래기술에 따른 공정챔버의 상부덮개 온도조절 장치의 구성도.1 is a configuration of the upper cover temperature control device of the process chamber according to the prior art.
제2a도 및 제2b도는 본 고안에 의한 공정챔버의 상부덮개 온도조절 장치의 일실시예 구성도.Figure 2a and Figure 2b is an embodiment configuration of the upper cover temperature control device of the process chamber according to the present invention.
〈도면의 주요부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>
1, 21 : 탑 리드 2, 22 : 가스분사판1, 21: top lead 2, 22: gas injection plate
3, 23 : 히터패드 4, 24 : 써머스탯3, 23: heater pads 4, 24: thermostat
5, 25 : 써멀스위치 26 : 폴리머 덩어리5, 25: thermal switch 26: polymer mass
본 고안은 반도체 제조공정중 식각공정을 수행하는 공정챔버의 상부덮개 온도를 제어하여 프로세스 러닝(process running)중 폴리머 증착으로 인한 파티클이 발생되는 것을 방지하는 공정챔버의 상부덮개 온도조절장치에 관한 것이다.The present invention relates to a top chamber temperature control apparatus of a process chamber which prevents generation of particles due to polymer deposition during process running by controlling the top cover temperature of a process chamber performing an etching process during a semiconductor manufacturing process. .
일반적으로, 반도체 제조공정에 사용되는 공정챔버는 제 1 도에 도시한 바와 같이 그의 상측에 탑 리드(Top LID)(21)가 구비되어 외부로부터 공급된 가스를 주입하며, 상기 탑 리드(21)의 상면에는 히터패드(23)가 장착되어 주입된 가스의 온도를 공정온도에 알맞도록 상승시킨다.In general, a process chamber used in a semiconductor manufacturing process is provided with a top lid (Top LID) 21 at an upper side thereof, as shown in FIG. 1, to inject gas supplied from the outside, and the top lid 21. The upper surface of the heater pad 23 is mounted to increase the temperature of the injected gas to suit the process temperature.
상기 히터패드(23)의 중앙부에는 그의 온도가 65℃~75℃정도의 온도로 조절하기 위한 써머스탯(thermostat)(24)이 장착되며, 상기 써머스탯(24)의 일측에는 그의 작동불량시 소정온도(보통 90℃)이상 상승할 때 그 온도를 차단하는 써멀스위치(25)가 장착된다.A thermostat 24 for adjusting the temperature of the heater pad 23 to a temperature of about 65 ° C. to 75 ° C. is installed, and at one side of the thermostat 24, the thermostat 24 is predetermined when its malfunction is performed. When the temperature rises above 90 ° C., the thermal switch 25 is mounted.
또한, 상기 탑 리드(21)의 하단에는 그와 소정간격만큼 떨어진 가스분사판(22)이 설치되어 소정온도로 가열된 가스를 공정챔버내로 고루 분사하여 공정을 수행하게 된다.In addition, a gas injection plate 22 spaced apart from the top lid 21 by a predetermined interval is installed at the lower end of the top lid 21 to uniformly inject the gas heated to a predetermined temperature into the process chamber.
그러나, 종래에는 상기 히터패드(23)에 의해 상승되어 65℃~75℃에서 제어된 가스가 탑 리드(21)와 가스분사판(22)에 형성된 틈새로 인하여 상기 가스분사판(22)에 실질적으로 전달되는 공정가스의 온도는 챔버 벽 온도(65℃)보다 낮게 되며, 이에 따른 온도차이에 의하여 프로세스 러닝시 각각 생성물인 폴리머(26)가 상기 탑 리드(21) 및 가스분사판(22)의 하단면에 불완정하게 달라붙고, 이것이 폴리머 덩어리로 뭉쳐져 떨어지므로써 웨이퍼가 손상되거나 심지어는 파손되는 경우까지 발생하는 문제점을 내포하고 있었다.However, in the related art, the gas controlled by the heater pad 23 and controlled at 65 ° C to 75 ° C is substantially formed on the gas injection plate 22 due to the gap formed in the top lid 21 and the gas injection plate 22. The temperature of the process gas delivered to the temperature is lower than the chamber wall temperature (65 ℃), and according to the temperature difference, the polymer 26 as a product during the process running, respectively, of the top lead 21 and the gas injection plate 22 Incompletely clinging to the bottom surface, which is agglomerated into the polymer lumps, the problem is that even if the wafer is damaged or even broken.
따라서, 본 고안은 상기의 제반 문제점을 해결하기 위하여 안출된 것으로서, 프로세스 러닝시 가스분사판 및 탑 리드에 폴리머가 증착되는 것을 방지하도록 주입되는 가스온도를 공정온도에 알맞도록 조절하는 공정챔버의 상부덮개 온도조절장치를 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, the upper part of the process chamber to adjust the gas temperature is injected to the process temperature to prevent the deposition of polymer on the gas injection plate and the top lead during the process running The purpose is to provide a cover thermostat.
상기 목적을 달성하기 위하여 본 고안은, 반도체 제조공정중 식각공정을 수행하기 위한 공정챔버의 프로세스 러닝시 탑 리드와 가스분사판에 식각생성물인 폴리머가 증착되는 것을 방지하기 위한 공정챔버의 상부덮개 온도 조절장치에 있어서, 상기 탑리드 상에 구비된 히터패드의 상부 일측에 장착되어 히팅온도를 85℃~95℃의 설정온도로 제어하는 써머스탯; 및 상기 써머스탯의 일측부에 장착되어 그의 동작불량에 따라 110℃ 이상 상승시 자동적으로 차단하는 써멀스위치를 포함하는 공정챔버의 상부덮개 온도 조절장치를 제공한다.In order to achieve the above object, the present invention, the upper cover temperature of the process chamber to prevent the deposition of the polymer, the etching product on the top lead and the gas injection plate during the process running of the process chamber for performing the etching process in the semiconductor manufacturing process A regulating device, comprising: a thermostat mounted to an upper side of a heater pad provided on the top lid to control a heating temperature to a set temperature of 85 ° C. to 95 ° C .; And it is mounted on one side of the thermostat provides an upper cover temperature control apparatus of the process chamber including a thermal switch to automatically shut off when rising above 110 ℃ according to its malfunction.
이하, 첨부된 제 2a 도 및 제 2b 도의 도면을 참조하여 본 고안의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings of FIGS. 2A and 2B.
제2a 도 및 제 2b 도는 본 고안에 의한 폴리머 증착방지용 온도조절 장치의 일실시예 구성도로서, 제 2a 도는 평면도, 제 2b 도는 측면도를 나타내며, 도면에서 1은 탑 리드, 2는 가스분사판, 3은 히터패드, 4는 써머스탯, 5는 써멀스위치를 각각 나타낸 것이다.2a and 2b is an embodiment configuration of the temperature control device for preventing the deposition of the polymer according to the present invention, 2a is a plan view, 2b is a side view, in the drawings 1 is a top lead, 2 is a gas jet plate, 3 is a heater pad, 4 is a thermostat, and 5 is a thermal switch.
도면에 도시한 바와 같이, 본 고안에 의한 공정챔버의 상부덮개 온도조절장치는 공정챔버의 탑 리드(1) 온도를 조절하여 가스의 온도차이에 의해 웨이퍼 식각시 발생되는 식각생성물인 폴리머가 상기 탑 리드(1) 및 가스분사판(2)에 증착되는 것을 방지할 수 있도록 구현한 것으로, 상기 탑 리드(1)의 상부에 장착된 히터패드(3)의 중앙부에는 그의 온도를 85℃~95℃의 설정온도로 제어하는 써머스탯(4)이 구비되며, 상기 써머스탯(4)의 일측에는 그의 작동불량 또는 고장시 상기 히터패드(3)의 히팅온도가 110℃이상 상승되면 자동적으로 차단되도록 하는 써멀 스위치(5)가 설치된다.As shown in the figure, the top cover temperature control apparatus of the process chamber according to the present invention is a polymer that is an etching product generated when etching the wafer by the temperature difference of the gas by adjusting the temperature of the top lid (1) of the process chamber is the tower Implemented to prevent deposition on the lid 1 and the gas injection plate (2), the temperature of the heater pad (3) mounted on the top of the top lid 1, the temperature of 85 ℃ ~ 95 ℃ A thermostat 4 is provided to control the set temperature of the thermostat 4, and one side of the thermostat 4 is automatically shut off when the heating temperature of the heater pad 3 rises above 110 ° C in case of malfunction or failure thereof. The thermal switch 5 is installed.
따라서, 상기 히터패드(3)의 히팅온도가 90℃로 유지되도록 써머스탯 스위치(도면에 도시하지 않음)가 온-오프(on-off)되므로써 상기 탑 리드(1)로 부터 가스분사판(2)에 전달되는 가스온도가 챔버의 벽 온도 보다 높게 형성되어 공정수행시 식각생성물인 폴리머가 증착되는 것을 방지할 수 있는 것이다.Therefore, the thermostat switch (not shown) is turned on and off so that the heating temperature of the heater pad 3 is maintained at 90 ° C. The gas temperature delivered to the C) is formed higher than the wall temperature of the chamber to prevent deposition of the polymer, which is an etching product, during the process.
상기와 같이 구성된 본 고안은 세정주기를 증가시킬 수 있으며, 탑 리드 및 가스분사판에 증착되는 폴리머 덩어리의 발생을 방지하므로써 런 웨이퍼의 손상을 방지할 수 있는 효과가 있다.The present invention configured as described above can increase the cleaning cycle, it is possible to prevent the damage of the run wafer by preventing the generation of polymer lumps deposited on the top lead and the gas injection plate.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940024904U KR200180663Y1 (en) | 1994-09-27 | 1994-09-27 | Temperature control apparatus for top cover plate of processing chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940024904U KR200180663Y1 (en) | 1994-09-27 | 1994-09-27 | Temperature control apparatus for top cover plate of processing chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960012663U KR960012663U (en) | 1996-04-17 |
| KR200180663Y1 true KR200180663Y1 (en) | 2000-05-15 |
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ID=19394044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940024904U KR200180663Y1 (en) | 1994-09-27 | 1994-09-27 | Temperature control apparatus for top cover plate of processing chamber |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200180663Y1 (en) |
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1994
- 1994-09-27 KR KR2019940024904U patent/KR200180663Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR960012663U (en) | 1996-04-17 |
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