KR200168496Y1 - Anti-static device using diode - Google Patents
Anti-static device using diode Download PDFInfo
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- KR200168496Y1 KR200168496Y1 KR2019970014865U KR19970014865U KR200168496Y1 KR 200168496 Y1 KR200168496 Y1 KR 200168496Y1 KR 2019970014865 U KR2019970014865 U KR 2019970014865U KR 19970014865 U KR19970014865 U KR 19970014865U KR 200168496 Y1 KR200168496 Y1 KR 200168496Y1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
개시된 내용은 아날로그 디지탈계 혼용회로의 정전기방지 장치에 관한 것이다. 이 장치는 아날로그 디지탈계 혼용회로 사이에 구성되어 혼용회로를 쇼트(short)시키는 작용을 하는 다이오드를 포함하고 있다. 이렇게 아날로그 디지탈계 혼용회로 사이에 다이오드를 넣으므로써 정전기 등과 같은 매우 큰 전위차가 발생함으로인해 야기되는 문제를 해결할 수 있는 효과가 있다.The disclosed content relates to an antistatic device of an analog digital mixed circuit. The device includes a diode configured between analog digital mixed circuits and shorting the mixed circuit. By inserting a diode between the analog-digital mixed circuit like this, there is an effect that can solve the problem caused by a very large potential difference such as static electricity.
Description
본 고안은 정전기를 방지하는 장치에 관한 것으로 특히 다이오드를 이용하여 VTR의 프런트 PCB(Front Printed Circuit Board)상의 아날로그 디지탈계 혼용회로상에서 발생하는 정전기를 방지하는 장치에 관한 것이다.The present invention relates to a device for preventing static electricity, and more particularly, to a device for preventing static electricity generated on an analog mixed circuit based on a front printed circuit board (VTR) of a VTR using a diode.
현재 널리 이용되고 있는 IC, LSI를 사용하는 모든 전자기기는 많든 적든 간에 마찰에 의해 발생된 정전기의 방전 영향을 받으며, 이로 인해 시스템다운, 오동작은 물론 소자의 파괴 문제가 발생한다. 그래서 최근 세계적으로 정전기방전에 대한 대책을 세워나가고 있다. 이러한 대책으로써 접지처리를 완전하게 개선하고, 전원선과 그라운드(ground)간의 임피던스(impedance)를 내려 정전기 방전에 의해 생기는 유도노이즈를 줄이는 방법을 사용하여 왔다.All electronic devices using ICs and LSIs, which are widely used at present, are affected by the discharge of static electricity generated by friction, whether large or small, which causes system down, malfunction, and destruction of devices. So, in recent years, countermeasures against static discharges have been set up worldwide. As a countermeasure, a method of completely improving the grounding process and lowering the impedance between the power line and the ground has been used to reduce the induced noise caused by the electrostatic discharge.
특히, 아날로그 디지탈계 혼용회로에서 가장 주의해야할 점은 접지처리문제이다. 이에 대한 일예로써, 정전기 방전의 영향에 대해 가장 취약한 부분의 하나인 VTR의 프런트 PCB상에서 아날로그계 AV 입력그라운드(Input Ground)가 있다. 이를 강화하기위한 방법으로 종래에는 AV그라운드를 별도로 디지탈계 그라운드와 분리하거나 공통 그라운드를 사용하여 두 혼용회로를 단락(Short)시켰다. 도1에 이에 대한 실례의 도면을 도시하였다.In particular, the most important issue in the analog digital mixed circuit is the grounding problem. An example of this is the analogue AV input ground on the front PCB of the VTR, one of the most vulnerable to the effects of electrostatic discharge. As a method for reinforcing this, conventionally, the AV ground is separately separated from the digital ground or the common circuit is used to short the two mixed circuits. Figure 1 shows an example of this.
도1a는 종래의 프런트 PCB상(11)에서 아날로그계 AV시그널라인(signal line)(12)의 그라운드(13)와 디지탈계 타이머(timer) 마이콤(14)의 그라운드(15)를 분리시킨 경우의 외형도를 나타낸 도면이고, 도1b는 아날로그계와 디지탈계의 그라운드(16)를 공통으로하여 쇼트시킨 경우의 외형도를 나타낸 도면이다. 지금까지 이러한 두 가지 경우의 방법으로 매우 큰 전위차가 발생하는 정전기 등에 대한 영향을 개선시켜왔으나 아날로그계와 디지탈계의 그라운드를 쇼트시킨 경우 디지탈계 그라운드의 노이즈가 아날로그계 그라운드로 혼입되어 오디오/비데오의 S/N에 영향을 미치는 문제가 발생하였다.Fig. 1A shows a case where the ground 13 of the analog AV signal line 12 and the ground 15 of the digital timer micom 14 are separated from the conventional front PCB 11. Fig. 1B is a view showing the outline, and Fig. 1B shows the outline when the analog ground and the digital ground 16 are shorted in common. Up to now, these two methods have been used to improve the effects on static electricity, which causes a very large potential difference. However, when the analog and digital grounds are shorted, the noise of the digital ground is mixed into the analog ground, and the audio / video There was a problem affecting S / N.
따라서, 이와 같은 문제점을 해결하기위해 본 고안에서는 위에서 제시된 방법과는 달리 다이오드를 사용하여 정전기로 인한 영향을 개선시키고자 한다.Therefore, in order to solve such a problem, the present invention intends to improve the effect of static electricity by using a diode, unlike the method described above.
도1a는 종래의 프런트 PCB상에서 아날로그계 AV시그널라인의 그라운드와 디지탈계 타이머 마이콤의 그라운드를 분리시킨 경우의 외형도.Fig. 1A is an external view when the ground of an analog AV signal line and the ground of a digital timer microcomputer are separated on a conventional front PCB.
도1b는 종래 아날로그계와 디지탈계의 그라운드를 공통으로하여 쇼트시킨 경우의 외형도.Fig. 1B is an external view of a case where a conventional analog system and a digital system ground are common and shorted.
도2는 본 고안에 따른 다이오드를 이용한 정전기방지 장치의 구성도.2 is a block diagram of an antistatic device using a diode according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
21 : AV시그널라인 22 : 마이콤21: AV signal line 22: Mycom
23 : 다이오드23: diode
이와 같은 목적을 달성하기위한 본 고안의 특징은 아날로그 디지탈계 혼용회로의 정전기방지 장치에 있어서, 아날로그 디지탈계 혼용회로 사이에 구성되어 혼용회로를 쇼트(short)시키는 작용을 하는 다이오드를 포함하는 정전기방지 장치에 있다.A feature of the present invention for achieving the above object is in the antistatic device of the analog digital mixed circuit, antistatic comprising a diode which is configured between the analog digital mixed circuit to short the mixed circuit (short) Is in the device.
전자회로에서 중요한 역할을 맡고 있는 반도체 소자의 하나인 다이오드는 전류가 흐르는 방향을 단일 방향으로 해주는 작용을 한다. 전류가 흐르는 방향을 '순방향', 흐르지 않는 방향을 '역방향'이라고 하며 순방향 저항은 제로(zero)이고, 역방향 저항은 무한대를 나타내는 것이 이상적이다.Diodes, which are one of the semiconductor devices that play an important role in electronic circuits, serve to direct current flow in a single direction. The direction in which the current flows is called the 'forward' direction, and the direction in which the current does not flow is called the 'reverse direction'. Ideally, the forward resistance is zero and the reverse resistance is infinite.
이와 같은 특성의 다이오드를 사용하여 정전기방지 장치의 구성을 나타낸 첨부한 도면을 참조하여 본 고안의 바람직한 실시예를 설명하기로 한다.With reference to the accompanying drawings showing the configuration of the antistatic device using the diode of such a characteristic will be described a preferred embodiment of the present invention.
도2는 본 고안에 따른 다이오드를 이용한 정전기방지 장치의 구성을 나타낸 도면이다. 도시한 바와 같이 아날로그계 AV시그널라인(21)의 접지선과 디지탈계 타이머 마이콤(22)의 접지선 사이에 두 개의 다이오드(23)가 설치되어 있다.2 is a view showing the configuration of an antistatic device using a diode according to the present invention. As shown, two diodes 23 are provided between the ground line of the analog AV signal line 21 and the ground line of the digital timer microcomputer 22.
두 아날로그 디지탈계 혼용회로에서는 정전기로 인해 전위차가 크게 발생하게 되므로 두 아날로그 디지탈계 혼용회로 사이에 다이오드(23)가 설치됨으로 인해 두 아날로그 디지탈계 혼용회로는 쇼트된다. 또한, 두 개의 다이오드(23)로 인해 오픈루프(open loop)가 형성되어 정전기로 인한 디지탈계 그라운드의 노이즈가 아날로그계 그라운드로 혼입되는 일이 없어진다. 그래서 다이오드로 인해 두 그라운드가 분리된 것과 같은 작용을 함으로써 두 회로상에는 노이즈로 인한 문제가 발생하지 않는다.In the two analog digital mixed circuits, since the potential difference is greatly generated due to static electricity, the two analog digital mixed circuits are shorted because the diode 23 is installed between the two analog digital mixed circuits. In addition, an open loop is formed by the two diodes 23 so that noise of the digital ground due to static electricity is not mixed with the analog ground. Thus, the diode acts as if the two grounds are separated, so that no noise problems occur on the two circuits.
상술한 바와 같이, 아날로그 디지탈계 혼용회로 사이에 다이오드를 넣으므로써 정전기 등과 같은 매우 큰 전위차가 발생함으로인해 야기되는 문제를 해결할 수 있는 효과가 있다.As described above, it is possible to solve the problem caused by the occurrence of a very large potential difference such as static electricity by inserting a diode between the analog digital mixed circuit.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970014865U KR200168496Y1 (en) | 1997-06-19 | 1997-06-19 | Anti-static device using diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970014865U KR200168496Y1 (en) | 1997-06-19 | 1997-06-19 | Anti-static device using diode |
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| Publication Number | Publication Date |
|---|---|
| KR19990001413U KR19990001413U (en) | 1999-01-15 |
| KR200168496Y1 true KR200168496Y1 (en) | 2000-02-01 |
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| KR2019970014865U KR200168496Y1 (en) | 1997-06-19 | 1997-06-19 | Anti-static device using diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9191663B2 (en) | 2013-02-28 | 2015-11-17 | Samsung Display Co., Ltd. | Organic light emitting display panel |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100735629B1 (en) * | 2001-06-29 | 2007-07-04 | 매그나칩 반도체 유한회사 | Electrostatic discharge protection circuit of digital/analog mixed mode integrated circuit |
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- 1997-06-19 KR KR2019970014865U patent/KR200168496Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9191663B2 (en) | 2013-02-28 | 2015-11-17 | Samsung Display Co., Ltd. | Organic light emitting display panel |
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| KR19990001413U (en) | 1999-01-15 |
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