KR200158122Y1 - Wafer cleaning apparatus - Google Patents

Wafer cleaning apparatus Download PDF

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Publication number
KR200158122Y1
KR200158122Y1 KR2019960013041U KR19960013041U KR200158122Y1 KR 200158122 Y1 KR200158122 Y1 KR 200158122Y1 KR 2019960013041 U KR2019960013041 U KR 2019960013041U KR 19960013041 U KR19960013041 U KR 19960013041U KR 200158122 Y1 KR200158122 Y1 KR 200158122Y1
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South Korea
Prior art keywords
cleaning
cleaning liquid
negative electrode
wafer
tank
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KR2019960013041U
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Korean (ko)
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KR970064180U (en
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홍상희
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김영환
현대전자산업주식회사
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Priority to KR2019960013041U priority Critical patent/KR200158122Y1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 고안은 불순물 제거기능을 갖는 웨이퍼 세정장치를 제공하는 것으로, 세정조 내에 전극을 설치하여 불순물중 금속성 이온에 전자를 공급하므로써 음전극에 환원된 금속의 석출로 세정액을 정화시켜 세정액의 사용시간을 증가시키므로써 세정액의 교체에 따른 비용 및 장비의 정지시간을 단축시킬 수 있는 효과가 있다.The present invention provides a wafer cleaning apparatus having an impurity removal function. By providing an electrode in a cleaning tank and supplying electrons to metallic ions in the impurity, the cleaning liquid is purified by precipitation of the reduced metal on the negative electrode, thereby increasing the use time of the cleaning liquid. By doing so, there is an effect of reducing the cost and downtime of equipment due to the replacement of the cleaning liquid.

Description

불순물 제거기능을 갖는 웨이퍼 세정장치Wafer cleaning device with impurity removal

제1도는 종래 웨이퍼를 세정하기 위한 세정장치를 도시한 구성도.1 is a block diagram showing a cleaning apparatus for cleaning a conventional wafer.

제2도는 본 고안의 제1실시예에 따른 웨이퍼 세정장치를 도시한 구성도.2 is a block diagram showing a wafer cleaning apparatus according to a first embodiment of the present invention.

제3도는 본 고안에 사용된 음전극의 형상을 도시한 사시도.Figure 3 is a perspective view showing the shape of the negative electrode used in the present invention.

제4도는 양전극을 도시한 도면.4 shows a positive electrode;

제5도는 본 고안의 제2실시예에 따른 웨이퍼 세정장치의 구성도.5 is a block diagram of a wafer cleaning apparatus according to a second embodiment of the present invention.

제6도는 본 고안의 제3실시예에 따른 웨이퍼 세정장치의 구성도.6 is a block diagram of a wafer cleaning apparatus according to a third embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1,11,21 및 31 : 세정조 2 및 32 : 보조 세정조1, 11, 21 and 31: washing tank 2 and 32: auxiliary washing tank

4,24 및 34 : 필터 5,15,25 및 35 : 세정액4,24 and 34 Filters 5,15,25 and 35 Cleaning liquid

6,16,26 및 36 : 불순물 3,13,23 및 33 : 세정액 순환관6, 16, 26 and 36: Impurities 3, 13, 23 and 33: Cleaning solution circulation tube

14A 및 14B : 제1 및 제2필터 18A,28A 및 38A : 음전극14A and 14B: first and second filters 18A, 28A and 38A: negative electrode

18B,28B 및 38B : 양전극 19,29 및 39 : 전원부18B, 28B and 38B: positive electrode 19, 29 and 39: power supply

37 : 도전와이어 20,30 및 40 : 펌프37: conductive wires 20,30 and 40: pump

본 고안은 웨이퍼 세정장치에 관한 것으로 특히, 세정조내에 전극을 설치하여 세정액 내에 함유된 불순물의 금속성 이온에 전자를 공급하여 세정액내에 함유된 불순물을 제거할 수 있는 웨이퍼 세정장치에 관한 것이다.The present invention relates to a wafer cleaning apparatus, and more particularly, to a wafer cleaning apparatus capable of removing an impurity contained in a cleaning liquid by providing an electrode in the cleaning tank to supply electrons to metallic ions of impurities contained in the cleaning liquid.

일반적으로 반도체 소자의 공정진행중 수차례의 식각공정 및 특정층의 제거공겅이 실시될 때마다 웨이퍼상에 남아있는 여러 가지의 불순물을 세정공정에 의해 제거하고 있다. 그러면 일반적인 웨이퍼 세정장치를 첨부한 도면을 참조하여 설명하면 다음과 같다.In general, each time an etching process and a specific layer removal process are performed several times during the semiconductor device process, various impurities remaining on the wafer are removed by a cleaning process. Next, a general wafer cleaning apparatus will be described with reference to the accompanying drawings.

제1도는 웨이퍼를 세정하기 위한 일반적인 세정장치를 도시한 구성도이다. 세정액(5)이 담겨있는 세정조(1)의 상부에는 넘치는 세정액(5)을 일시 저장하기 위한 보조세정조(2)가 설치되고, 보조세정조(2)와 세정조(1)는 세정액 순환관(3)에 의하여 연결된다. 세정액 순환관(3)내에는 세정액에 함유된 불순물(6)을 제거하기 위한 필터(4)가 설치된다.1 is a block diagram showing a general cleaning apparatus for cleaning a wafer. The upper part of the washing tank 1 containing the washing liquid 5 is provided with an auxiliary washing tank 2 for temporarily storing the overflowing washing liquid 5, and the auxiliary washing tank 2 and the washing tank 1 are circulated with the washing liquid. Connected by a tube (3). In the cleaning liquid circulation pipe 3, a filter 4 for removing impurities 6 contained in the cleaning liquid is provided.

세정조(1)내의 세정액으로 웨이퍼(도시안됨)에 묻은 이물질을 제거한 상태에서 세정조(1)내의 세정액(5)은 보조세정조(2)로 흘러들어가며, 세정액은 세정액 순환관(3)을 통하여 세정조(1)로 재유입된다. 이와같이 세정액이 보조세정조(2)에서 세정액 순환관(3)을 통하여 세정조(1)내로 재유입되는 과정에서 세정액내에 함유된 불순물(6)들은 세정액 순환관(3)내에 설치된 필터(4)를 통해 제거되는데, 이때 세정액(5)내에 잔류하는 불순물(6)중 금속성이온(예를들면, 구리 혹은 알루미늄)들은 제거가 되지 않는다.The cleaning liquid 5 in the cleaning tank 1 flows into the auxiliary cleaning tank 2 while the foreign matter on the wafer (not shown) is removed by the cleaning liquid in the cleaning tank 1, and the cleaning liquid flows into the cleaning liquid circulation pipe 3. It is reflowed into the washing tank 1 through. Thus, the impurities (6) contained in the cleaning liquid in the process of reflowing the cleaning liquid into the cleaning tank (1) through the cleaning liquid circulation pipe (3) in the auxiliary cleaning tank (2), the filter (4) installed in the cleaning liquid circulation pipe (3) In this case, metallic ions (for example, copper or aluminum) among impurities 6 remaining in the cleaning liquid 5 are not removed.

그러므로 세정액(5)을 일정 횟수(웨이퍼의 세정횟수)사용하게 되면 세정액(5)내에 금속성 이온들의 농도가 증가하게 되어 웨이퍼의 표면이 세정되지 않거나 오히려 금속성 이온들이 웨이퍼 표면에 흡착되어 다음공정 진행시 에러를 유발한 뿐 아니라 장비까지도 오염시킬 수 있다. 이러한 단점을 해결하기 위해서는 세정액(5)의 교체주기를 짧게 하여야 하는데, 이는 생산단가를 높이고 생산성을 저하시키는 요인이 된다.Therefore, if the cleaning solution 5 is used a certain number of times (the number of cleaning of the wafer), the concentration of metallic ions in the cleaning solution 5 is increased and the surface of the wafer is not cleaned, or rather, the metallic ions are adsorbed on the surface of the wafer, and the process proceeds. Not only can it cause errors, it can also contaminate your equipment. In order to solve this disadvantage, the replacement cycle of the cleaning solution 5 should be shortened, which increases the production cost and lowers the productivity.

따라서 본 고안은 세정조 내에 전극을 설치하여 불순물중 금속성 이온에 전자를 공급하므로써 환원된 금속이 음전극에 석출되도록 하여 상기한 단점을 해소할 수 있는 웨이퍼 세정장치를 제공하는 데 그 목적이 있다.Accordingly, an object of the present invention is to provide a wafer cleaning apparatus capable of eliminating the above-described disadvantages by allowing the reduced metal to be deposited on the negative electrode by supplying electrons to metallic ions in impurities by installing electrodes in the cleaning tank.

상기한 목적을 달성하기 위한 본 고안은 세정액이 담겨지며 웨이퍼의 세정이 실시되는 세정조와, 세정조에 연결되며 펌프를 통하여 세정액을 순환시키는 세정액 순환관과, 세정액 내에 설치되며 세정액에 함유된 불순물중 금속성이온을 석출하는 음전극과, 음전극을 도통시키기 위한 양전극과, 음전극 및 양전극에 전원을 공급하는 전원부로 이루어지는 것을 특징으로 한다.The present invention for achieving the above object is a cleaning tank containing a cleaning liquid and the cleaning of the wafer is carried out, a cleaning liquid circulation tube connected to the cleaning tank and circulating the cleaning liquid through a pump, and installed in the cleaning liquid and metallic among the impurities contained in the cleaning liquid. A negative electrode for depositing ions, a positive electrode for conducting the negative electrode, and a power supply unit for supplying power to the negative electrode and the positive electrode.

이하, 본 고안을 첨부한 도면을 참고하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings of the present invention will be described in detail.

제2도는 본 고안의 제1실시예를 도시한 구성도로서, 본 고안의 제1실시예는 크게 세정액(15)이 담겨져 웨이퍼에 대한 세정이 실시되는 세정조(11)와, 세정조(11)내의 세정액(15)을 순환시키기 위한 세정액 순환관(13)과, 세정조(11) 내에 위치하는 양전극(18B)과, 세정액 순환관(13) 내에 위치하는 음전극(18A)과, 양전극(18B) 및 음전걱(18A)에 전원을 공급하는 전원부(19)로 이루어진다. 그리고 세정액 순환관(13)의 일단은 세정조(11) 하부에 연결되며, 또다른 단부는 세정조(11)의 상부와 대응한다. 한편, 세정액 순환관(13)은 세정액(15)을 강제로 순환하기 위한 펌프(20) 및 순환하는 세정액내에 함유된 불순물을 여과하기 위한 제1필터(14A) 및 제2필터(14B)가 설치된다. 여기서, 제1필터(14A) 및 제2필터(14B)는 세정액(15)에 함유된 이물질을 제거하게 되며, 음전극(18A)은 금속성 이온을 제거하게 된다.2 is a block diagram showing a first embodiment of the present invention. The first embodiment of the present invention includes a cleaning tank 11 in which a cleaning liquid 15 is contained and cleaning of a wafer is performed. Cleaning liquid circulation tube 13 for circulating the cleaning liquid 15 in the inside of the cleaning medium, a positive electrode 18B positioned in the cleaning tank 11, a negative electrode 18A positioned in the cleaning liquid circulation tube 13, and a positive electrode 18B. ) And a power supply unit 19 for supplying power to the negative electrode spat 18A. One end of the cleaning liquid circulation tube 13 is connected to the lower portion of the washing tank 11, and another end thereof corresponds to the upper portion of the washing tank 11. On the other hand, the cleaning liquid circulation pipe 13 is provided with a pump 20 for forcibly circulating the cleaning liquid 15 and a first filter 14A and a second filter 14B for filtering impurities contained in the circulating cleaning liquid. do. Here, the first filter 14A and the second filter 14B remove foreign matters contained in the cleaning liquid 15, and the negative electrode 18A removes metallic ions.

음전극(18A)은 일정길이로 이루어진 탄소전극으로서, 제3도에 도시된 바와같이 탄소전극내에는 중공의 관을 다수 형성하였다. 제3도에는 세정액이 유동하는 각 관의 단면을 사각형으로 도시하였으나, 표면적을 최대화하기 위하여 다각형으로 형성할 수 있음은 물론이다.The negative electrode 18A is a carbon electrode having a predetermined length, and as shown in FIG. 3, a plurality of hollow tubes were formed in the carbon electrode. In FIG. 3, the cross section of each tube through which the cleaning liquid flows is shown in a square, but it can be formed in a polygon in order to maximize the surface area.

양전극(18B)은 백금으로 이루어지며, 제4도에 도시된 바와같이 망(網)구조로 이루어진다.The positive electrode 18B is made of platinum, and has a network structure as shown in FIG.

이와같이 구성된 본 고안의 제1실시예의 동작을 설명하면, 웨이퍼를 세정함으로 인하여 불순물(16)이 함유된 세정액(15)이 펌프(20)에 의하여 세정액 순환관(13)에 유입되면 먼저 제1필터(14A)에 의하여 이물질이 여과되며, 제거되지 않은 금속성 이온을 음전극(18A)을 거치면서 전자를 공급받아서 금속으로 환원되어 음전극(18A)에 석출된다. 계속해서 제2필터(14B)를 거치면서 잔여 이물질이 완전하게 제거된다. 이와같이 제1필터(14A) 및 제2필터(14B), 음전극(18A)에 의하여 이물질이 완전하게 제거된 순수한 세정액(15)은 세정조(11)로 재유입된다. 여기서 불순물(16)은 무게에 의해 세정조(11)의 아래부분에 많이 존재하게 되므로 세정액 순환관(13)의 세정액 유입부를 세정조(11) 하부에 연결함으로서 세정액(15)내에 잔류하는 불순물을 효과적으로 제거할 수 있다.Referring to the operation of the first embodiment of the present invention configured as described above, when the cleaning liquid 15 containing impurities 16 is introduced into the cleaning liquid circulation pipe 13 by the pump 20 by cleaning the wafer, the first filter first. The foreign material is filtered by 14A, and metal ions which have not been removed are supplied to electrons through the negative electrode 18A, are reduced to metal, and precipitated on the negative electrode 18A. Subsequently, the remaining foreign matter is completely removed while passing through the second filter 14B. In this way, the pure cleaning liquid 15 from which foreign matter is completely removed by the first filter 14A, the second filter 14B, and the negative electrode 18A is reflowed into the cleaning tank 11. Since impurities 16 are present in the lower portion of the washing tank 11 by weight, the impurities remaining in the washing liquid 15 are connected by connecting the washing liquid inlet portion of the washing liquid circulation pipe 13 to the lower portion of the washing tank 11. Can be removed effectively.

상기 음전극(18A)에서 금속성 이온이 금속으로 환원되는 원리는 다음과 같다.The principle in which metallic ions are reduced to metal in the negative electrode 18A is as follows.

구리의 이온(Cu2+) + 전자(2e) = 구리(Cu)Copper ions (Cu 2+ ) + electrons (2e) = copper (Cu)

알루미늄의 이온(Al3+) + 전자(3e) = 알루미늄(Al)Ion (Al 3+ ) + Electron (3e) = Aluminum (Al)

이하, 본 고안에 따른 제2실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, a second embodiment according to the present invention will be described in detail with reference to the accompanying drawings.

제5도는 본 고안의 제2실시예를 도시한 구성도로서, 본 고안의 제2실시예는 크게 세정액(15)이 담겨져 웨이퍼에 대한 세정이 실시되는 세정조(21)와, 세정조(21)내의 세정액(25)을 순환시키기 위한 세정액 순환관(23)과, 세정조(21) 내에 위치하는 양전극(28B) 및 음전극(28A)과, 양전극(28B) 및 음전극(28A)에 전원을 공급하는 전원부(29)로 이루어진다. 그리고 세정액 순환관(23)의 일단은 세정조(21) 하부에 연결되며, 또다른 단부는 세정조(21)의 상부와 대응한다. 한편, 세정액 순환관(23)은 세정액(25)을 강제로 순환하기 위한 펌프(30) 및 순환하는 세정액내에 함유된 불순물을 여과하기 위한 필터(24)가 설치된다.FIG. 5 is a block diagram showing a second embodiment of the present invention. The second embodiment of the present invention includes a cleaning tank 21 in which a cleaning liquid 15 is largely contained, and cleaning of the wafer is performed. The power supply is supplied to the cleaning liquid circulation tube 23 for circulating the cleaning liquid 25 in the inside), the positive electrode 28B and the negative electrode 28A positioned in the cleaning tank 21, and the positive electrode 28B and the negative electrode 28A. It consists of a power supply unit 29. One end of the cleaning liquid circulation pipe 23 is connected to the lower portion of the washing tank 21, and another end thereof corresponds to the upper portion of the washing tank 21. On the other hand, the cleaning liquid circulation pipe 23 is provided with a pump 30 for forcibly circulating the cleaning liquid 25 and a filter 24 for filtering impurities contained in the circulating cleaning liquid.

이와같이 구성된 본 고안의 제2실시예의 동작을 설명하면, 웨이퍼를 세정함으로 인하여 불순물(26)이 함유된 세정액(25)이 펌프(30)에 의하여 세정액 순환관(23)에 유입되면 먼저 필터(24)에 의하여 이물질이 여과되며, 제거되지 않은 금속성 이온은 음전극(28A)에서 전자를 공급받아서 금속으로 환원되어 음전극(28A)에 석출된다.Referring to the operation of the second embodiment of the present invention configured as described above, when the cleaning liquid 25 containing impurities 26 flows into the cleaning liquid circulation pipe 23 by the pump 30 by cleaning the wafer, the filter 24 first. The foreign matter is filtered by), and the non-removed metallic ions are supplied with electrons from the negative electrode 28A, reduced to metal, and precipitated on the negative electrode 28A.

이하, 본 고안에 따른 제3실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, a third embodiment according to the present invention will be described in detail with reference to the accompanying drawings.

제6도는 본 고안의 제3실시예를 도시한 구성도로서, 본 고안의 제3실시예는 크게 세정액(35)이 담겨져 웨이퍼에 대한 세정이 실시되는 세정조(31)와, 세정조(31)와 도전와이어(37)로 연결되는 보조세정조(32)와, 세정조(31)내의 세정액(35)을 순환시키기 위한 세정액 순환관(33)과, 세정조(31) 내에 위치하는 음전극(38A)과, 보조세정조(32)내에 위치하는 양전극(38B)과, 양전극(38B) 및 음전극(38A)에 전원을 공급하는 전원부(39)로 이루어진다. 그리고 세정액 순환관(33)의 일단은 세정조(31) 하부에 연결되며, 또다른 단부는 세정조(31)의 상부와 대응한다. 한편, 세정액 순환관(33)은 세정액(35)을 강제로 순환하기 위한 펌프(40) 및 순환하는 세정액내에 함유된 불순물을 여과하기 위한 필터(34)가 설치된다.6 is a configuration diagram showing a third embodiment of the present invention. The third embodiment of the present invention includes a cleaning tank 31 in which a cleaning liquid 35 is largely contained, and cleaning of the wafer is performed. ) And the auxiliary cleaning tank 32 connected to the conductive wire 37, the cleaning liquid circulation pipe 33 for circulating the cleaning liquid 35 in the cleaning tank 31, and the negative electrode (located in the cleaning tank 31) 38A), the positive electrode 38B located in the auxiliary cleaning tank 32, and the power supply part 39 which supplies power to the positive electrode 38B and the negative electrode 38A. One end of the cleaning liquid circulation tube 33 is connected to the lower portion of the washing tank 31, and another end thereof corresponds to the upper portion of the washing tank 31. On the other hand, the washing liquid circulation pipe 33 is provided with a pump 40 for forcibly circulating the washing liquid 35 and a filter 34 for filtering impurities contained in the circulating washing liquid.

이와같이 구성된 본 고안의 제3실시예의 동작을 설명하면, 웨이퍼를 세정함으로 인하여 불순물(36)이 함유된 세정액(35)이 펌프(40)에 의하여 세정액 순환관(33)에 유입되면 먼저 필터(34)에 의하여 이물질이 여과되며, 제거되지 않은 금속성 이온은 음전극(38A)에서 전자를 공급받아서 금속으로 환원되어 음전극(38A)에 석출된다. 이때 보조세정조(32)에 설치된 양전극(38B)에서는 백금이 전자를 잃고 백금이온이 된다.Referring to the operation of the third embodiment of the present invention configured as described above, when the cleaning liquid 35 containing impurities 36 is introduced into the cleaning liquid circulation pipe 33 by the pump 40 by cleaning the wafer, the filter 34 The foreign matter is filtered by), and the non-removed metallic ions are supplied with electrons from the negative electrode 38A, reduced to metal, and precipitated on the negative electrode 38A. At this time, in the positive electrode 38B installed in the auxiliary cleaning tank 32, platinum loses electrons and becomes platinum ions.

상술한 바와같이 본 고안에 의하면 세정조 내에 전극을 설치하여 불순물증 금속성 이온에 전자를 공급하므로써 음전극에 환원된 금속의 석출로 세정액을 정화시켜 세정액의 사용시간을 증가시키므로써 세정액의 교체에 따른 비용 및 장비의 정지시간을 단축시킬 수 있는 탁월한 효과가 있다.As described above, according to the present invention, an electrode is installed in a cleaning tank to supply electrons to impurity metallic ions, thereby purifying the cleaning liquid by precipitation of the reduced metal on the negative electrode, thereby increasing the use time of the cleaning liquid, thereby increasing the cost of replacing the cleaning liquid. And there is an excellent effect that can reduce the downtime of the equipment.

Claims (1)

세정액이 담겨지며 웨이퍼의 세정이 실시되는 세정조와, 상기 세정조에 연결되며 펌프를 통하여 상기 세정액을 순환시키는 세정액 순환관과, 상기 세정액 내에 설치되며 세정액에 함유된 불순물중 금속성 이온을 석출하는 음전극과, 상기 음전극을 도통시키기 위한 양전극과, 상기 음전극 및 양전극에 전원을 공급하는 전원부를 포함하여 구성되되, 상기 음전극은 일정길이로 이루어진 탄소전극으로서 상기 탄소전극 내에는 다각형인 다수의 관이 형성되고, 상기 양전극은 백금으로 이루어진 망 구조로 이루어진 것을 특징으로 하는 웨이퍼 세정장치.A cleaning tank containing a cleaning liquid and cleaning the wafer, a cleaning liquid circulation tube connected to the cleaning tank and circulating the cleaning liquid through a pump, a negative electrode installed in the cleaning liquid and depositing metallic ions among impurities contained in the cleaning liquid; It comprises a positive electrode for conducting the negative electrode, and a power supply for supplying power to the negative electrode and the positive electrode, the negative electrode is a carbon electrode of a predetermined length is formed in the carbon electrode a plurality of tubes are formed in the carbon electrode, The positive electrode is a wafer cleaning apparatus, characterized in that the network structure made of platinum.
KR2019960013041U 1996-05-23 1996-05-23 Wafer cleaning apparatus KR200158122Y1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101995688B1 (en) 2019-02-14 2019-07-02 이선수 Debris removal device for semiconductor equipment parts
KR20210051597A (en) * 2019-10-31 2021-05-10 세메스 주식회사 Apparatus for suppying chemical, method for removing particle of chemical, nozzle unit and apparatus for treating substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101995688B1 (en) 2019-02-14 2019-07-02 이선수 Debris removal device for semiconductor equipment parts
KR20210051597A (en) * 2019-10-31 2021-05-10 세메스 주식회사 Apparatus for suppying chemical, method for removing particle of chemical, nozzle unit and apparatus for treating substrate
KR102267914B1 (en) * 2019-10-31 2021-06-22 세메스 주식회사 Apparatus for suppying chemical, method for removing particle of chemical, nozzle unit and apparatus for treating substrate
US11981995B2 (en) 2019-10-31 2024-05-14 Semes Co., Ltd. Chemical supply apparatus, method for removing particles from chemical, nozzle unit, and substrate treating apparatus

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