KR200148612Y1 - HMD injection device for semiconductor manufacturing process - Google Patents
HMD injection device for semiconductor manufacturing process Download PDFInfo
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- KR200148612Y1 KR200148612Y1 KR2019950037907U KR19950037907U KR200148612Y1 KR 200148612 Y1 KR200148612 Y1 KR 200148612Y1 KR 2019950037907 U KR2019950037907 U KR 2019950037907U KR 19950037907 U KR19950037907 U KR 19950037907U KR 200148612 Y1 KR200148612 Y1 KR 200148612Y1
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- chamber
- hmd
- supply line
- gas supply
- hmds
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- 238000002347 injection Methods 0.000 title claims abstract description 20
- 239000007924 injection Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 abstract description 17
- 239000007921 spray Substances 0.000 abstract description 6
- 238000004378 air conditioning Methods 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 고안에 의한 에이치 엠 디 에스 분사장치는 가스공급 라인과, 그 가스공급라인과 연결된 챔버와, 그 챔버의 상부에 형성된 에어벤트와, 챔버의 하부에 형성된 다수개의 분사노즐공과, 상기 챔버와 결합되는 플레이트를 포함하여 구성되어, 웨이퍼(wafer)내에 균일하게 에이치 엠 디 에스(HMDS)처리가 가능하게 하고, 고 집적회로 스핀(spin)시 패턴이 떨어짐을 방지하여 에이치 엠 디 에스 처리 능력을 향상하며, 패브(FAB)내 공조 분위기 오염을 감소하도록 하였다.HMD spray apparatus according to the present invention is a gas supply line, the chamber connected to the gas supply line, the air vent formed in the upper portion of the chamber, a plurality of injection nozzle holes formed in the lower portion of the chamber, coupled with the chamber It is configured to include a plate, which enables the HMDS processing uniformly in the wafer, and improves the HMD processing ability by preventing the pattern from falling during high integrated circuit spin. And to reduce air-conditioning atmosphere contamination in the FAB.
Description
제1도는 종래의 기술에 의한 에이치 엠 디 에스 분사장치를 나타낸 개략도.Figure 1 is a schematic diagram showing a HMD injection device according to the prior art.
제2도는 종래의 기술에 의한 챔버의 분사노즐공을 나타내는 저면도.FIG. 2 is a bottom view showing a spray nozzle hole of a chamber according to the prior art. FIG.
제3도는 본 고안에 의한 에이치 엠 디 에스 분사장치를 나타낸 개략도.Figure 3 is a schematic diagram showing a HMD injection device according to the present invention.
제4도는 본 고안에 의한 챔버의 분사노즐공을 나타내는 저면도.Figure 4 is a bottom view showing the injection nozzle hole of the chamber according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
11 : 가스 공급라인 13 : 에어벤트11: gas supply line 13: air vent
15 : 플레이트 12 : 챔버15 plate 12 chamber
14 : 분사노즐공 17 : 이그조스트홀14: injection nozzle ball 17: egg hole
본 고안은 반도체 제조공정용 에이치 엠 디 에스 분사장치에 관한 것으로, 특히 웨이퍼(wafer) 내에 균일하게 에이치 엠 디 에스(HMDS)처리가 가능하게 하고, 고 집적회로 스핀(spin)시 패턴이 떨어짐을 방지하여 에이치 엠 디 에스 처리 능력을 향상하며, 패브(FAB)내 공조 분위기 오염을 감소하도록 한 반도체 제조공정용 에이치 엠 디 에스 분사장치에 관한 것이다.The present invention relates to a HMD injection device for a semiconductor manufacturing process, and in particular, to enable the HMDS processing uniformly in a wafer (wafer), and to reduce the pattern during high integrated circuit spin (spin) The present invention relates to an HMD injection device for a semiconductor manufacturing process which prevents to improve HMD processing capacity and to reduce air pollution atmosphere contamination in a FAB.
에이치 엠 디 에스(HMDS)를 설명하면 다음과 같다. 유기 화학물인 감광막은 산화막의 표면에 잘 붙지 않는다. 그런데, 이 접착력은 웨이퍼의 화학적인 식각과정에서 매우 중요하게 된다. 왜냐하면 접착도가 떨어진다면 언더컷이 생기게 되기 때문이다. 이런 접착도에 관한 문제의 해결 방법은 산화막과 화학적으로 반응하며 감광막과는 물리적인 결합을 이루는 분자막을 형성하게 하는 것이다. 이런 화합물로는 다이클로로다이메틸사이레인(dichlorodimethylsilane)이 있다. 이것은 반도체 공정에서 행해지는 첫번째 표면 처리 중의 하나이다. CH3그룹은 공기쪽으로 붙어 있어서 감광제 사슬과 물리적인 결합을 할수 있도록 하는데 이때 CH3그룹이 감광막과 결합하게 되는 접착도를 개선한 것이 헥사메틸다이사이레인(hexamethyldisilane ; 이하 HMDS라 한다)이다. 이는 또한 유독한 기체가 발생되지 않아 반도체 공정에서 널리 사용된다.HMDS is described as follows. The organic photosensitive film does not adhere well to the surface of the oxide film. However, this adhesion is very important in the chemical etching process of the wafer. This is because undercutting results in undercuts. The solution to this problem of adhesion is to form a molecular film that chemically reacts with the oxide film and forms a physical bond with the photosensitive film. Such compounds include dichlorodimethylsilane. This is one of the first surface treatments performed in the semiconductor process. The CH 3 group is attached to the air to allow physical bonding with the photosensitive chain, and hexamethyldisilane (hereinafter referred to as HMDS) improves the adhesion of the CH 3 group to the photosensitive layer. It is also widely used in semiconductor processes because no toxic gases are generated.
종래의 기술에서는 제1도 및 제2도에 도시한 바와 같이, HMDS 공급라인(5)이 부착되어 있는 챔버의(1) 디스펜스홀이 하나로 되어 있고, HHDS 처리 완료후 챔버를 이그조스트(exhaust)시킬 수 있도록 한 이그조스트홀(4)을 플레이트부(3)에만 설치하였다.In the prior art, as shown in Figs. 1 and 2, the dispensing hole (1) of the chamber to which the HMDS supply line 5 is attached is one, and the chamber is exhausted after completion of the HHDS process. An exost hole (4) was installed only in the plate portion (3).
종래의 기술을 순차적으로 살펴보면, 웨이퍼(2)가 HMDS 챔버(1)의 플레이트(3)에 안착되면 챔버(1)가 닫힌다. 챔버(1)내의 공기를 이그조스트하여 진공상태로 유지한다. HMDS가 질소(N2)에 실려 공급홀 가이드(7)를 통해 웨이퍼(2)에 부착된다. 처리 완료 후 플레이트(3)의 이그조스트흘(4)을 통해 이그조스트되면 챔버(1)가 열리게 된다. 즉 1개의 분사홀을 통해 처리하게 된다. 그러나, 이러한 종래의 기술에서는 웨이퍼(2)내의 일정부분의 HMDS 처리 불량으로 패턴이 들떠 공정상 치명적인 불량이 발생하게 되며, 처리 완료 후 이그조스트가 신속하지 못하거나 HMDS 챔버내 HMDS 의 잔유가 남아 있으면 공조상 실리카(silica) 성분이 검출되어 불량을 유발하는 문제점이 있다.Looking at the prior art sequentially, the chamber 1 is closed when the wafer 2 is seated on the plate 3 of the HMDS chamber 1. The air in the chamber 1 is evacuated and kept in vacuum. HMDS is loaded on nitrogen (N2) and attached to wafer (2) via supply hole guide (7). After completion of the processing, the chamber 1 is opened when the sample is egosted through the egost draft 4 of the plate 3. That is, it is processed through one injection hole. However, in such a conventional technique, the HMDS process of a part of the wafer 2 is defective and the pattern is fatal, resulting in a fatal defect in the process. If present, air phase silica (silica) component is detected there is a problem that causes a defect.
따라서, 본 고안의 목적은 상기와 같은 문제점을 해결하기 위해 안출한 것으로, 웨이퍼(wafer) 내에 균일하게 에이치 엠 디 에스(HMDS)처리가 가능하게 하고, 고 집적회 로 스핀(spin)시 패턴이 떨어짐을 방지하여 에이치 엠 디 에스 처리 능력을 향상하며, 패브(FAB)내 공조 분위기 오염을 감소하도록 한 에이치 엠 디 에스 분사장치를 제공함 에 있다.Accordingly, an object of the present invention is to solve the above problems, it is possible to uniformly process the HMDS (HMDS) in the wafer (wafer), and the pattern during high integrated circuit spin (spin) It is to provide a HMD spray to prevent the fall to improve the HMD processing capacity, and to reduce the air conditioning atmosphere pollution in the FAB (FAB).
이러한, 본 고안의 목적은 가스공급 라인과, 그 가스공급라인과 연결된 챔버와, 그 챔버의 상부에 형성되 에어벤트와, 그 챔버의 하면에 형성된 다수개의 분사노즐공과, 상기 챔버와 결합되며 이그조스트홀이 형성된 플레이트를 포함하여 구성된 것을 특징으로 하는 반도체 제조공정용 에이치 엠 디 에스 분사장치에 의해서 달성된다.The object of the present invention is to provide a gas supply line, a chamber connected to the gas supply line, an air vent formed on an upper portion of the chamber, a plurality of injection nozzle balls formed on a lower surface of the chamber, and coupled with the chamber. It is achieved by a HMD injection device for a semiconductor manufacturing process characterized in that it comprises a plate formed with a hole.
이하, 본 고안에 의한 반도체 제조공정용 에이치 엠 디 에스 분사장치를 첨부도면에 도시한 실시예에 따라서 설명한다.It will be described below according to the embodiment shown in the accompanying drawings HM MD injection apparatus for a semiconductor manufacturing process according to the present invention.
제3도는 본 고안에 의한 에이치 엠 디 에스 분사장치를 나타낸 개략도이고, 제4도는 본 고안에 의한 챔버의 분사노즐공을 나타내는 저면도를 각각 보인 것이다.Figure 3 is a schematic diagram showing a HMD injection device according to the present invention, Figure 4 is a bottom view showing the injection nozzle hole of the chamber according to the present invention, respectively.
이에 도시한 바와 같이, 본 고안에 의한 반도체 제조공정용 에이치 엠 디 에스 분 사장치는 가스공급 라인(11)과, 그 가스공급 라인과 연결된 챔버(12)와, 그 챔버의 상 부에 형성된 에어벤트(13)와, 챔버(12)의 하부에 형성된 다수개의 분사노즐공(14)과, 상기 챔버(12)와 결합되는 플레이트(15)를 포함하여 구성된다.As shown in the drawing, the HMD spray apparatus for a semiconductor manufacturing process according to the present invention includes a gas supply line 11, a chamber 12 connected to the gas supply line, and an air vent formed on the chamber. 13, a plurality of injection nozzle holes 14 formed in the lower part of the chamber 12, and a plate 15 coupled to the chamber 12.
이와 같이 구성된 본 고안에 의한 반도체 제조공정용 에이치 엠 디 에스 분사창치의 작용효과를 설명하면 다음과 같다.Referring to the effect of the HMD DS of the semiconductor manufacturing process according to the present invention configured as described above are as follows.
HMDS 분사홀인 분사노즐공(14)을 여러개 구성하고, HMDS 처리 완료후 이그조스트를 HMDS 챔버(12) 및 플레이트부(15)에서 동시에 실시할수 있도록 챔버(12)의 상부에 에어 벤트(13)를 부착한다. 우선 웨이퍼(16)가 HMDS 챔버의 플레이트(15)에 안착된후 챔버(12)가 닫힌다. 챔버내의 공기를 이그조스트하여 진공상태를 유지한다. HMDS가 여러 개의 분사노즐공(14)을 통해 질소(N2)에 실려 웨이퍼(16)에 골고루 처리된다. 처리 완료후 플레이트(15) 이그조스트홀(17) 및 챔버(12)에 부착된 에어벤트(13)에 의해 동시에 이그조스트 실시 후 챔버(12)가 열린다. 이때, 에어벤트(13)의 기능이 패브내에 퍼지지 않게 되는 것이다.A plurality of injection nozzle holes 14, which are HMDS injection holes, are formed, and after completion of HMDS processing, an air vent 13 is provided on the upper portion of the chamber 12 so that the ignition can be simultaneously performed in the HMDS chamber 12 and the plate portion 15. Attach. First, the wafer 16 rests on the plate 15 of the HMDS chamber and then the chamber 12 is closed. The air in the chamber is evacuated to maintain a vacuum. The HMDS is loaded on the nitrogen (N2) through the plurality of injection nozzle holes 14 and evenly processed on the wafer 16. After the completion of the process, the chamber 12 is opened after the execution of the egost at the same time by the plate 15, the igzothhole 17 and the air vent 13 attached to the chamber 12. At this time, the function of the air vent 13 is not spread in the fabric.
이상에서 설명한 바와 같이, 본 고안에 의한 에치치 엠 디 에스 분사장치는 가스공급 라인과, 그 가스공급라인과 연결된 챔버와, 그 챔버의 상부에 형성된 에어벤트와, 챔버의 하부에 형성된 다수개의 분사노즐공과, 상기 챔버와 결합되는 플레이트를 포함 하여 구성되어, 웨이퍼(wafer) 내에 균일하게 에이치 엠 디 에스(HMDS)처리가 가능하게 하고, 고 집적회로 스핀(spin)시 패턴이 떨어짐을 방지하여 에이치 엠 디 에스 처 리 능력을 향상하며, 패브(FAB)내 공조 분위기 오염을 감소하도록 한 효과가 있다.As described above, the Hitch MD spray apparatus according to the present invention includes a gas supply line, a chamber connected to the gas supply line, an air vent formed at an upper portion of the chamber, and a plurality of sprays formed at a lower portion of the chamber. It comprises a nozzle hole and a plate coupled to the chamber, enabling the HMDS processing uniformly in the wafer, and prevents the pattern from falling during high integrated circuit spin (HMDS) It has the effect of improving MDS processing capacity and reducing air-conditioning atmosphere pollution in FAB.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950037907U KR200148612Y1 (en) | 1995-12-02 | 1995-12-02 | HMD injection device for semiconductor manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950037907U KR200148612Y1 (en) | 1995-12-02 | 1995-12-02 | HMD injection device for semiconductor manufacturing process |
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| Publication Number | Publication Date |
|---|---|
| KR970046617U KR970046617U (en) | 1997-07-31 |
| KR200148612Y1 true KR200148612Y1 (en) | 1999-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019950037907U KR200148612Y1 (en) | 1995-12-02 | 1995-12-02 | HMD injection device for semiconductor manufacturing process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389508B1 (en) * | 2000-07-05 | 2003-06-25 | 주식회사 실리콘 테크 | Apparatus for spraying hmds |
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1995
- 1995-12-02 KR KR2019950037907U patent/KR200148612Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389508B1 (en) * | 2000-07-05 | 2003-06-25 | 주식회사 실리콘 테크 | Apparatus for spraying hmds |
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| Publication number | Publication date |
|---|---|
| KR970046617U (en) | 1997-07-31 |
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