KR200145599Y1 - Pressure control apparatus - Google Patents
Pressure control apparatus Download PDFInfo
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- KR200145599Y1 KR200145599Y1 KR2019960011922U KR19960011922U KR200145599Y1 KR 200145599 Y1 KR200145599 Y1 KR 200145599Y1 KR 2019960011922 U KR2019960011922 U KR 2019960011922U KR 19960011922 U KR19960011922 U KR 19960011922U KR 200145599 Y1 KR200145599 Y1 KR 200145599Y1
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- South Korea
- Prior art keywords
- pressure
- load lock
- gas
- body portion
- lock portion
- Prior art date
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- 230000001105 regulatory effect Effects 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 37
- 238000005137 deposition process Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
본 고안의 압력조절장치는 외부에 가열코일로 둘러싸여, 내부튜브와 외부튜브를 갖는 몸체부와, 몸체부에 연결되어, 가스를 공급하는 제1가스공급관과, 외부튜브의 측면에 형성된 배기구에 설치되어, 배기되는 가스의 압력값이 전기적인 신호로써 출력되는 제1압력게이지와, 증착가스의 농도가 조절되는 로드락부와, 몸체부의 저면에 형성되어, 몸체부와 로드락부 사이가 개폐되는 덮개와, 로드락부의 상단에 설치되어, 가스압력값이 전기적인 신호로써 출력되는 제2압력게이지와, 로드락부에 형성된 배기구에 설치되어, 가스압력값이 전기적인 신호로써 출력되는 제3압력게이지와, 로드락부에 설치되어, 웨이퍼가 로딩되는 로더를 포함하여 이루어지는 압력조절장치에 있어서, 몸체부와 로드락부를 연결시키는 연결관과, 연결관에 설치되어, 연결관의 개폐가 조절되는 에어밸브를 포함하여 이루어진다.The pressure regulator of the present invention is surrounded by a heating coil on the outside, the body portion having an inner tube and an outer tube, connected to the body portion, the first gas supply pipe for supplying gas, and installed in the exhaust port formed on the side of the outer tube And a first pressure gauge for outputting a pressure value of the exhaust gas as an electrical signal, a load lock portion for adjusting the concentration of the deposition gas, a cover formed on a bottom surface of the body portion, and a cover for opening and closing between the body portion and the load lock portion. A second pressure gauge installed at an upper end of the load lock portion and outputting a gas pressure value as an electrical signal, and a third pressure gauge provided at an exhaust port formed at the load lock portion and outputting a gas pressure value as an electrical signal; A pressure regulating device provided in a load lock portion and including a loader for loading a wafer, the pressure adjusting device comprising: a connecting pipe connecting the body portion and the load lock portion; It comprises an air valve that is opened or closed is adjusted.
Description
제1도는 종래의 압력조걸장치를 설명하기 위한 도면이고,1 is a view for explaining a conventional pressure trap device,
제2도는 본 고안의 압력조절장치를 설명하기 위한 도면이다.2 is a view for explaining a pressure regulating device of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10, 20 : 가열코드 11, 21 : 몸체부10, 20: heating cord 11, 21: body
11-1, 21-1 : 외부튜브 11-2, 21-2 : 내부튜브11-1, 21-1: outer tube 11-2, 21-2: inner tube
11-3, 22-3 : 덮개 12-1, 22-1 : 제1가스공급관11-3, 22-3: cover 12-1, 22-1: first gas supply pipe
13, 23 : 로더 14, 24 : 로드락부13, 23: loader 14, 24: load lock unit
27 : 연결관 15-1, 15-2, 25-1, 25-2 : 배기구27: connector 15-1, 15-2, 25-1, 25-2: exhaust port
본 고안은 화학기상증착장치중 압력을 조절하는 장치에 관한 것으로, 특히 페이퍼 증착공정시 내부튜브 내의 압력과 로드락부 내의 압력을 동일하게 유지하기에 적당한 압력조절장치에 관한 것이다.The present invention relates to a device for regulating pressure in a chemical vapor deposition apparatus, and more particularly, to a pressure regulating device suitable for maintaining the pressure in the inner tube and the pressure in the load lock part in the paper deposition process.
화학기상증착장치에서 증착공정이 진행되는 몸체부에 형성된 내부튜브와, 증착가스로써 사용되는 산소의 농도를 조절하기 위한 로드락부 간의 동일한 압력 상태에서만이, 내부튜브가 형성된 몸체부와 로드락부 사이에 형성된, 덮개가 열리면서 웨어퍼가 내부튜브 내로 로딩되며, 로드락부에서 그 농도가 조절된 산소가스가 몸체부로 운반되어 웨어퍼상에 증착공정이 시작된다.In the chemical vapor deposition apparatus, only between the inner tube formed in the body portion undergoing the deposition process and the load lock portion for adjusting the concentration of oxygen used as the deposition gas, between the inner tube formed body portion and the load lock portion When the cover is opened, the wafer is loaded into the inner tube, and the oxygen gas whose concentration is controlled is transferred from the load lock part to the body part to start the deposition process on the wafer.
제1도는 종래의 압력조절장치를 설명하기 위한 단면도로, 이하 첨부된 도면을 참고로 하여 종래의 압력조절장치를 설명하면 다음과 같다.1 is a cross-sectional view for explaining a conventional pressure regulator, a conventional pressure regulator will be described below with reference to the accompanying drawings.
종래의 압력조절장치는 제1도와 같이, 외부에 가열코일(10)로 둘러싸여, 내부튜브(11-2)와 외부튜브(11-1)를 갖는 몸체부(11)와, 몸체부(11)에 연결되어, 가스를 공급하는 제1가스공급관(12-1)과, 외부튜브(11-1)의 하단 측면에 설치되는 배기구(15-1)에 설치되어, 배기되는 가스의 압력값이 전기적인 신호로써 출력되는 제1압력게이지와, 몸체부(11) 저면에 형성되어, 몸체부(11)와 로드락부(14)와, 로드락부(14) 하단 측면에 형성된 배기구(15-2)에 설치되어, 로드락부(14) 사이가 개폐되는 덮개(11-3)와, 증착가스의 농도가 조절되는 로드락부(14)와, 로드락부(14)의 상단에 설치되어, 가스압력값이 전기적인 신호로써 출력되는 제2압력게이지와 로드락부(14) 하단 측면에 형성된 배기구(15-2)에 설치되어, 로드락부(14) 내의 배기되는 가스의 압력을 측정하는 제3압력게이지와, 로드락부(14)에 연결되어, 가스를 공급하는 제2가스공급관(12-2)과, 로드락부(14)에 설치되어, 웨이퍼가 로딩되는 로더(13)를 포함하여 이루어진다.Conventional pressure regulating device is the body portion 11 and the body portion 11 having an inner tube 11-2 and an outer tube 11-1, surrounded by a heating coil 10, as shown in FIG. Connected to the first gas supply pipe 12-1 for supplying gas, and an exhaust port 15-1 provided at the lower end side surface of the outer tube 11-1, and the pressure value of the exhaust gas is A first pressure gauge outputted as a normal signal, formed on a bottom surface of the body portion 11, and formed in a body portion 11, a load lock portion 14, and an exhaust port 15-2 formed at a lower side of the load lock portion 14. A cover 11-3 to be opened and closed between the load lock portions 14, a load lock portion 14 for adjusting the concentration of the deposition gas, and an upper end of the load lock portion 14, so that the gas pressure value is A third pressure gauge installed at the second pressure gauge outputted as a normal signal and the exhaust port 15-2 formed at the lower side of the load lock unit 14 to measure the pressure of the gas exhausted in the load lock unit 14; Is connected to a de rakbu 14 is provided on the second gas supply pipe 12-2 and a load rakbu 14 for supplying a gas, it comprises a loader 13 in which the wafer is loaded.
종래의 압력조절장치의 동작을 살펴보면 다음과 같다.Looking at the operation of the conventional pressure regulator as follows.
우선, 덮개(11-3)로 분리된 몸체부(11)와 로드락부(14)에 각각 제1가스공급관(12-1)과 제2가스공급관(12-2)을 통하여 질소가스를 공급하면서 몸체부(11)의 배기구(15-1)에 설치된 제1압력게이지와 로드락부(14)에 설치된 제2압력게이지와 제3압력게이지를 통하여 각 가스의 압력값을 비교한다.First, while supplying nitrogen gas to the body portion 11 and the load lock portion 14 separated by the cover 11-3 through the first gas supply pipe 12-1 and the second gas supply pipe 12-2, respectively. The pressure value of each gas is compared through the first pressure gauge installed in the exhaust port 15-1 of the body portion 11 and the second pressure gauge and the third pressure gauge installed in the load lock portion 14.
그리하여 각각의 압력값이 동일하게 형성되면 덮개(11-3)는 오픈되며, 로드락부(14) 내의 웨이퍼가 로딩되어 있는 로더(13)가 내부튜브(11-2) 내로 업동작하며, 또한 로드락부(14) 내의 산소가스가 내부튜브(11-2) 내로 확산되어 웨이퍼 상에 증착공정이 개시된다.Thus, when the pressure values are equally formed, the cover 11-3 is opened, and the loader 13, in which the wafer in the load lock unit 14 is loaded, is operated up into the inner tube 11-2, and the load is also loaded. Oxygen gas in the lock portion 14 is diffused into the inner tube 11-2 to start a deposition process on the wafer.
이때, 몸체부(11)의 내부튜브(11-2)는 상단이 개방되어, 외부튜브(11-1)와 연결되며, 몸체부(11)에서 반응이 진행된 불순물가스나 미반응가스가 이를 통하여 배기된다.At this time, the inner tube (11-2) of the body portion 11 is open at the top, connected to the outer tube (11-1), the impurity gas or unreacted gas that the reaction proceeded in the body portion 11 through this Exhausted.
또한, 증착공정을 수월하게 하기 위하여 몸체부(11) 외부에 가열수단으로 가열코일(10)을 설치한다.In addition, in order to facilitate the deposition process, the heating coil 10 is installed as a heating means outside the body portion 11.
그러나, 종래의 압력조절장치에서는 몸체부와 로드락부 내에 질소가스를 공급하여 동일한 대기압 상태로 유지하는 데 소요되는 시간과 환경을 유지하기가 어려운 문제점이 따른다.However, in the conventional pressure regulator, it is difficult to maintain the time and environment for supplying nitrogen gas into the body portion and the load lock portion to maintain the same atmospheric pressure.
즉, 제1,2,3 압력게이지를 통하여 몸체부와 로드락부 내에 동일한 압력상태로 유지시킨 후에, 배기구와 연결되는 배기가스라인의 압력변화등의 외부환경의 변화가 발생하면 다시 처음의 동작을 반복하여햐 하는 불편함이 따른다.That is, after maintaining the same pressure state in the body portion and the load lock portion through the first, second and third pressure gauges, if the external environment changes such as the pressure change of the exhaust gas line connected to the exhaust port, the first operation is resumed. Repeated discomfort follows.
본 고안은 이러한 문제점을 해결하고자 안출된 것으로, 웨이퍼 증착공정시에 내부튜브 내의 압력과 로드락부 내의 압력을 동일하도록 좀 더 수월하게 유지하기에 적당한 압력조절장치를 그 목적으로 한다.The present invention has been made to solve such a problem, and the object of the present invention is to provide a pressure control device suitable for maintaining the pressure in the inner tube and the pressure in the load lock part more easily in the wafer deposition process.
본 고안의 압력조절장치는 외부에 가열코일로 둘러싸여, 내부튜브와 외부튜브를 갖는 몸체부와, 몸체부에 연결되어, 가스를 공급하는 제1가스공급관과, 외부튜브의 측면에 형성된 배기구에 설치되어, 배기되는 가스의 압력값이 전기적인 신호로써 출력되는 제1압력게이지와, 증착가스의 농도가 조절되는 로드락부와, 몸체부의 저면에 형성되어, 몸체부와 로드락부 사이가 개폐되는 덮개와, 로드락부의 상단에 설치되어, 가스압력값이 전기적인 신호로써 출력되는 제2압력게이지와, 로드락부에 형성된 배기구에 설치되어, 가스압력값이 전기적인 신호로써 출력되는 제3압력게이지와, 로드락부에 설치되어, 웨이퍼가 로딩되는 로더를 포함하여 이루어지는 압력조절장치에 있어서, 몸체부와 로드락부를 연결시키는 연결관과, 연결관에 설치되어, 연결관의 개폐가 조절되는 에어밸브를 포함하여 이루어진다.The pressure regulator of the present invention is surrounded by a heating coil on the outside, the body portion having an inner tube and an outer tube, connected to the body portion, the first gas supply pipe for supplying gas, and installed in the exhaust port formed on the side of the outer tube And a first pressure gauge for outputting a pressure value of the exhaust gas as an electrical signal, a load lock portion for adjusting the concentration of the deposition gas, a cover formed on a bottom surface of the body portion, and a cover for opening and closing between the body portion and the load lock portion. A second pressure gauge installed at an upper end of the load lock portion and outputting a gas pressure value as an electrical signal, and a third pressure gauge provided at an exhaust port formed at the load lock portion and outputting a gas pressure value as an electrical signal; A pressure regulating device provided in a load lock portion and including a loader for loading a wafer, the pressure adjusting device comprising: a connecting pipe connecting the body portion and the load lock portion; It comprises an air valve that is opened or closed is adjusted.
제2도는 본 고안의 압력조절장치를 설명하기 위한 도면으로, 이하 첨부된 도면을 참고로 하여 본 고안의 압력조절장치를 설명하겠다.2 is a view for explaining the pressure regulator of the present invention, with reference to the accompanying drawings will be described the pressure regulator of the present invention.
본 고안의 압력조절장치는 제2도와 같이, 외부에 가열코일(20)로 둘러싸여, 내부튜브(21-2)와 외부튜브(21-1)를 갖는 몸체부(21)와, 몸체부(21)에 연결되어, 가스를 공급하는 제1가스공급관(21-1)과, 외부튜브(21-1)의 측면에 형성된 배기구(25-1)에 설치되어, 배기되는 가스의 압력값이 전기적인 신호로써 출력되는 제1압력게이지와, 증착가스의 농도가 조절되는 로드락부(24)와, 몸체부(21) 저면에 형성되어, 몸체부(21)와 로드락부(24)사이가 개폐되는 덮개(21-3)와, 로드락부(24) 상단에 설치되어, 로드락부(24) 상부의 가스압력값이 전기적인 신호로써 출력되는 제2압력게이지와, 로드락부(24) 하단 측면에 형성된 배기구(25-2)에 설치되어, 로드락부(24) 내의 가스압력값이 전기적인 신호로써 출력되는 제3압력게이지와, 로드락부(24)에 설치되어, 웨이퍼가 로딩되는 로더(23)와, 몸체부(21)와 로드락부(24)를 연결시키는 연결관(28)과, 연결관(28)에 설치되어, 연결관(28)의 개폐가 조절되는 에어밸브를 포함하여 이루어진다.The pressure regulating device of the present invention, as shown in FIG. 2, is surrounded by a heating coil 20 to the outside, the body portion 21 having the inner tube 21-2 and the outer tube 21-1, and the body portion 21. Is connected to the first gas supply pipe (21-1) for supplying gas and the exhaust port (25-1) formed on the side of the outer tube (21-1), the pressure value of the exhaust gas is electrically A first pressure gauge output as a signal, a load lock part 24 to control the concentration of the deposition gas, and a cover formed on the bottom of the body part 21 to open and close between the body part 21 and the load lock part 24. 21-3, the second pressure gauge provided at the upper end of the load lock part 24 and outputting the gas pressure value of the upper part of the load lock part 24 as an electrical signal, and the exhaust port formed at the lower side surface of the load lock part 24; A third pressure gauge installed at 25-2 and outputting a gas pressure value in the load lock section 24 as an electrical signal, and a loader 23 provided at the load lock section 24 to load a wafer. And, a connecting pipe 28 for connecting the body portion 21 and the load lock portion 24, and is provided in the connecting pipe 28, and comprises an air valve for opening and closing of the connecting pipe 28 is adjusted.
본 고안의 압력조절장치의 동작을 살펴보면 다음과 같다.Looking at the operation of the pressure regulator of the present invention are as follows.
우선, 덮개로(23)써 분리된 몸체부(21)와 로드락부(24) 내부에 제1, 2가스공급관(22-1)(22-2)을 통하여 질소가스를 공급하며, 몸체부(21)의 하단 측면의 배기구(25-1)에 설치된 제1압력게이지와, 제2압력게이지와, 제3압력게이지를 그 압력값을 비교한다.First, nitrogen gas is supplied into the body part 21 and the load lock part 24 separated by the cover 23 through the first and second gas supply pipes 22-1 and 22-2, and the body part ( The pressure values of the first pressure gauge, the second pressure gauge and the third pressure gauge provided in the exhaust port 25-1 on the lower side of 21 are compared.
이때, 제1, 제2, 제3 압력게이지를 통하여 서로 상이한 압력가스값이 출력되면 몸체부(21)와 로드락부(24) 사이의 연결관(28)에 형성된 에어밸브가 오픈된다.At this time, when different pressure gas values are output through the first, second, and third pressure gauges, the air valves formed in the connecting pipe 28 between the body portion 21 and the load lock portion 24 are opened.
즉, 내부튜브(21-2) 내의 압력과 로드락부(24) 내의 압력을 동일한 대기압 상태로 맞추는 에어밸브가 열리면 내부튜브(21)와 로드락부(24) 간의 미소한 압력차이에 의해 연결관(28)을 통해 기류흐름이 발생되고, 이 기류흐름에 의해 내부튜브 내의 압력과 로드락부 내의 압력이 동일한 대기압상태로 맞춰진다.That is, when the air valve is opened to set the pressure in the inner tube 21-2 and the pressure in the load lock portion 24 to the same atmospheric pressure state, the connection tube (a small pressure difference between the inner tube 21 and the load lock portion 24) is opened. 28, an air stream is generated, and the air flow sets the pressure in the inner tube and the pressure in the load lock to the same atmospheric pressure.
반도체 디바이스 제조공정 진행을 위해 웨이퍼를 로딩하고 있는 로더가 몸체부의 내부튜브 내로 로딩되기 위해서는 내부튜브 내의 압력과 로드락부 내의 압력이 동일한 대기압 상태이어야 한다.In order for the loader, which is loading the wafer for the semiconductor device manufacturing process, to be loaded into the inner tube of the body portion, the pressure in the inner tube and the pressure in the load lock portion must be the same atmospheric pressure.
따라서, 세 개의 즉, 제1,2,3 압력게이지가 동일한 압력값을 나타내어야 하므로, 이를 위해서 본 고안 장치에서는 내부튜브와 로드락부 간에 연결관이 형성되어 있으며, 이의 통제역할을 위해서 에어밸브가 설치된다.Therefore, the three, that is, the first, second, and third pressure gauges must exhibit the same pressure value, for this purpose, the connection tube is formed between the inner tube and the load lock part in this device, the air valve for Is installed.
즉, 본 고안의 압력조절장치는 종래 장치와는 달리 내부튜브 내의 압력과 로드락부의 압력을 동일한 대기압 상태로 맞추기 위한 수단으로 내부튜브와 로드락부를 연결하는 연결관과, 이를 개폐하기 위한 에어밸브가 형성되며, 이를 통하여 내부튜브 내와 로드락부 내에 공급되는 질소가스의 압력을 동일하게 유지할 수 있다.In other words, the pressure regulator of the present invention, unlike the conventional apparatus, as a means for adjusting the pressure in the inner tube and the pressure of the load lock portion to the same atmospheric pressure state connecting tube connecting the inner tube and the load lock portion, and an air valve for opening and closing it Is formed, through which the pressure of the nitrogen gas supplied into the inner tube and the load lock portion can be maintained the same.
또한, 본 고안의 압력조절장치에서는 종래처럼 외부환경변화가 발생되면 내부튜브와 로드락부 간의 압력을 동일한 대기압 상태로 다시 맞추어야 하는 번거로움을 덜 수 있으며, 또한, 그에 따른 시간손실을 줄일 수 있다.In addition, in the pressure regulator of the present invention, when a change in the external environment occurs as in the prior art, it is possible to reduce the hassle of having to re-adjust the pressure between the inner tube and the load lock part to the same atmospheric pressure state, and also reduce time loss.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960011922U KR200145599Y1 (en) | 1996-05-15 | 1996-05-15 | Pressure control apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960011922U KR200145599Y1 (en) | 1996-05-15 | 1996-05-15 | Pressure control apparatus |
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| Publication Number | Publication Date |
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| KR970064172U KR970064172U (en) | 1997-12-11 |
| KR200145599Y1 true KR200145599Y1 (en) | 1999-06-15 |
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| KR2019960011922U KR200145599Y1 (en) | 1996-05-15 | 1996-05-15 | Pressure control apparatus |
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| KR (1) | KR200145599Y1 (en) |
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