KR20010108733A - Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor - Google Patents

Abstract

Amorphous and polycrystalline structures of GaN-based semiconductors grow on the surface of compound semiconductor layers represented by the formulas In _x Al _y Ga _(1-xy) N (0≤ (x, y) ≤1.0000 and (x + y) ≤1.0000) do. Among other things, different types of amorphous and polycrystalline structures of InAlGaN-based compound semiconductors grown on the surface of the InAlGaN-based compound semiconductors can be functionally very important and can be used in combination or individually in different band-gap designs of different compound semiconductors. Can be.

Description

Amorphous and Polycrystalline Growth Methods of Gallium Nitride Compound Semiconductors {AMORPHOUS AND POLYCRYSTALLINE GROWING METHOD FOR GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR}

The present invention relates to an amorphous and / or polycrystalline growth method, in particular to an amorphous or polycrystalline growth method of a gallium nitride compound semiconductor.

Compound semiconductor devices have been usefully used in displays and communication fabrics. In particular, GaN-based compound semiconductors have attracted a lot of attention because of the blue light emitting ability and high efficiency photon emission function. GaN-based compound semiconductors are direct band-gap materials with high efficiency of energy transfer and have a wide band-gap distribution.

U. S. Patent No. 5,563, 422 discloses a process for the production of GaN compound semiconductors, in particular in the manufacture of light emitting diodes, in particular using crystalline GaN compound semiconductors. However, crystalline GaN-based compound semiconductors have problems of high cost and low yield.

It is therefore an object of the present invention to provide a method for producing a low cost and high yield GaN compound semiconductor.

1 is a cross-sectional view of a compound semiconductor device fabricated in accordance with a first preferred embodiment of the present invention.

2 is a cross-sectional view of a compound semiconductor device fabricated in accordance with a second preferred embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10... Board

100... First compound semiconductor layer 102. First additional compound semiconductor layer

200... Second compound semiconductor layer 202. Second additional compound semiconductor layer

In order to achieve the above object, the manufacturing method of the GaN compound semiconductor of the present invention comprises the following steps,

(a) forming a first amorphous and / or polycrystalline compound semiconductor layer on a substrate by the formula In _x Al _y Ga _(1-xy) N (0 ≦ (x, y) ≦ 1.0000 and (x + y) ≦ 1.0000) Steam growth at a first growth temperature of 180 to 1100 ° C. with a thickness of 0.0001 to 10.00 μm, and

(b) vapor-growing a first additional amorphous and / or polycrystalline compound semiconductor layer on the first compound semiconductor layer at a second growth temperature of 800 to 1200 ° C. with a thickness of 0.0001 to 10.00 μm by the structural formula. do.

In addition, the method for producing a GaN compound semiconductor of the present invention comprises the following steps,

(c) vapor growing a second amorphous and / or polycrystalline compound semiconductor layer on the first additional compound semiconductor layer by a structural formula at a third growth temperature lower than the second growth temperature;

(d) vapor-growing a second additional amorphous and / or polycrystalline compound semiconductor layer on the second compound semiconductor layer at a fourth growth temperature higher than the third growth temperature by the structural formula. .

Various objects and advantages of the invention will be more readily understood by the following detailed description taken in conjunction with the accompanying drawings.

The present invention is to provide a method for amorphous and polycrystalline growth of gallium nitride compound semiconductor. A compound semiconductor device fabricated in accordance with a first preferred embodiment of the present invention is shown in FIG. 1.

First, a first amorphous and / or polycrystalline compound semiconductor on the substrate 10 by the formula In _x Al _y Ga _(1-xy) N (0 ≦ (x, y) ≦ 1.0000 and (x + y) ≦ 1.0000) The layer 100 is vapor grown at a first growth temperature of 180-1100 ° C. with a thickness of 0.0001-10.00 μm. The substrate 10 may be one of sapphire, GaN, Si, SiC or GaAs.

Thereafter, the first additional amorphous and / or polycrystalline compound semiconductor layer 102 on the first compound semiconductor layer 100 by the above structural formula at a second growth temperature of 800 to 1200 ° C. with a thickness of 0.0001 to 10.00 μm. Steam growth.

The first compound semiconductor layer 100 and the first additional compound semiconductor layer 102 are doped with p-type and / or n-type impurities at a concentration of 10 ^14-22 EA / cm 3 to provide a rectifier, LED or photosensitive device. Can provide. In addition, the first compound semiconductor layer 100 and the first additional compound semiconductor layer 102 may be doped with i-type impurities at a concentration of 10 ^14-22 EA / cm 3 to provide a resistive functional element at high or low rates. have.

The p-type impurity is selected from the group consisting of zinc, magnesium, beryllium, strontium, barium and cadmium. The n-type impurity is selected from the group consisting of silicon, germanium, tin, sulfur, tellurium and selenium. In addition, heat treatment, annealing and electron beam shooting can be performed after the above process for 1 to 50 minutes at a temperature of 601 to 1200 ° C.

The reaction gas may comprise ammonia or hydrazine, or ammonia-hydrazine mixed with trimethylaluminum, and the reaction gas may further comprise a single gas or a gas mixed with trimethylgallium and / or triethylgallium. In addition, the reaction gas further comprises at least one of diethylzinc, trimethylzinc, trimethylindium, and cyclopentadienyl magnesium.

2 is a cross-sectional view of a compound semiconductor device fabricated in accordance with a second preferred embodiment of the present invention.

First, a first amorphous and / or polycrystalline compound semiconductor on the substrate 10 by the formula In _x Al _y Ga _(1-xy) N (0 ≦ (x, y) ≦ 1.0000 and (x + y) ≦ 1.0000) The layer 100 is vapor grown at a first growth temperature of 180-1100 ° C. with a thickness of 0.0001-10.00 μm. The substrate 10 may be one of sapphire, GaN, Si, SiC or GaAs.

Thereafter, the first additional amorphous and / or polycrystalline compound semiconductor layer 102 on the first compound semiconductor layer 100 by the structural formula at a second growth temperature of 800 to 1200 ° C. with a thickness of 0.0001 to 10.00 μm. Steam growth.

Thereafter, the second amorphous and / or polycrystalline compound semiconductor layer 200 is vapor-grown on the first additional compound semiconductor layer 102 at a third growth temperature lower than the second growth temperature by the structural formula.

Next, the amorphous and / or polycrystalline compound semiconductor layer 202 added second on the second compound semiconductor layer 200 by the above structural formula is vapor-grown at a fourth growth temperature higher than the third growth temperature.

The first compound semiconductor layer 100 and the first additional compound semiconductor layer 102, the second compound semiconductor layer 200, and the second additional compound semiconductor layer 202 are i-type at a concentration of 10 ^14-22 EA / cm 3. can be doped with p-type and / or n-type impurities to provide fins, P / N structure devices, or other devices.

The p-type impurity is selected from the group consisting of zinc, magnesium, beryllium, strontium, barium and cadmium. The n-type impurity is selected from the group consisting of silicon, germanium, tin, sulfur, tellurium and selenium. In addition, heat treatment, annealing and electron beam shooting can be performed after the above process for 1 to 50 minutes at a temperature of 601 to 1200 ° C.

The reaction gas comprises ammonia or hydrazine, or ammonia-hydrazine mixed with trimethylaluminum, and the reaction gas further comprises a single gas or a gas mixed with trimethylgallium and / or triethylgallium. In addition, the reaction gas includes at least one of diethylzinc, trimethylzinc, trimethylindium, and cyclopentadienyl magnesium.

Compound semiconductor layers may be used in combination or separately in homobands, heterostructures, or double heterostructures of different band-gap designs of different compound semiconductors, such as quantum wells / multi-conductor wells or super-lattices. Can be used.

In addition, vapor growth, spotting, epoxy attaching, deposition, electroplating, and semiconductor growth of MBE may be included in the process.

The table below shows the possible compositions of the two-layer system shown in FIG. 1.

The table can also be generalized to more complex compound semiconductor layer systems. For example, a double heterojunction can be formed by a system with more layers.

Although the present invention has been described in terms of preferred embodiments, the present invention is not limited thereto. Various alternatives and modifications have been described above, and other variations will be possible to those skilled in the art. Accordingly, all such substitutions and changes will be included within the scope of the invention as set forth in the appended claims.

Claims (11)

In the amorphous and / or polycrystalline growth method of a gallium nitride compound semiconductor, (a) forming a first amorphous and / or polycrystalline compound semiconductor layer on a substrate by the formula In _x Al _y Ga _(1-xy) N (0 ≦ (x, y) ≦ 1.0000 and (x + y) ≦ 1.0000) Steam growth at a first growth temperature of 180 to 1100 ° C. with a thickness of 0.0001 to 10.00 μm, and (b) vapor-growing a first additional amorphous and / or polycrystalline compound semiconductor layer on the first compound semiconductor layer by the structural formula at a second growth temperature of 800 to 1200 ° C. with a thickness of 0.0001 to 10.00 μm. An amorphous and / or polycrystalline growth method of a gallium nitride compound semiconductor. The method of claim 1, further comprising: (c) vapor growing a second amorphous and / or polycrystalline compound semiconductor layer on the first additional compound semiconductor layer by a structural formula at a third growth temperature lower than the second growth temperature; (d) vapor-growing the second additional amorphous and / or polycrystalline compound semiconductor layer on the second compound semiconductor layer at a fourth growth temperature above the third growth temperature by the structural formula. An amorphous and / or polycrystalline growth method of a gallium nitride compound semiconductor. 3. The method of claim 1, further comprising adding i-type and / or p-type and / or n-type impurities to the compound semiconductor layer at a concentration of 10 ^14-22 EA / cm 3. Amorphous and / or polycrystalline growth method of a gallium nitride compound semiconductor. 4. The method of claim 3, wherein the p-type impurity is selected from the group consisting of zinc, magnesium, beryllium, strontium, barium, and cadmium. 4. The method of claim 3, wherein the n-type impurity is selected from the group consisting of silicon, germanium, tin, sulfur, tellurium, and selenium. The amorphous and / or polycrystalline growth method of a gallium nitride compound semiconductor according to claim 3, further comprising the step of performing heat treatment, annealing, and electron beam shooting at a temperature of 601 to 1200 캜 for 1 to 50 minutes. . 3. Ammonia or hydrazine or ammonia-hydrazine reaction gas mixed with trimethylaluminum is used to grow the compound semiconductor layer, and the reaction gas is a single gas or trimethylgallium and / or triethylgallium. A method of amorphous and / or polycrystalline growth of a gallium nitride compound semiconductor comprising a gas mixed with. 8. The amorphous and / or gallium nitride compound semiconductor according to claim 7, wherein the reaction gas further comprises at least one of diethyl zinc, trimethyl zinc, trimethyl indium, and cyclopentadienyl magnesium. Or polycrystalline growth method. The method of claim 1, wherein the substrate is sapphire, GaN, Si, SiC or GaAs. 3. The compound semiconductor layer according to claim 1 or 2, wherein the compound semiconductor layer is used in combination with homo-structures, heterostructures, or double heterostructures of different band-gap designs of different compound semiconductors, such as a bottom well / multi-conducting well or a middle grating A method for amorphous and / or polycrystalline growth of a gallium nitride compound semiconductor, which can be used separately. 3. The amorphous and / or polycrystalline of gallium nitride based compound semiconductor according to claim 1 or 2, further comprising the steps of vapor growth, spattering, epoxy attaching, deposition, electroplating, and semiconductor growth of MBE. Sex growth method.