KR20010090666A - gas transfer device of ALE apparatus using the remote plasma - Google Patents

Abstract

PURPOSE: A gas transfer device of an atomic layer epitaxy system using remote plasma is provided to prevent particles by supplying a reaction material under a lower temperature. CONSTITUTION: A storage vessel(4) stores a solid source of TaCl5 as a reaction material including Ta, A heating portion(5) is installed at an outer face of the storage vessel(4). The heating portion(5) heats the reaction material to a predetermined temperature and sublimates the reaction material to a reaction gas of TaCl5. A flow rate control portion(6) controls the amount of the generated reaction gas. The first feeding valve portion(23) is used for transmitting the generated reaction gas to a vacuum chamber or a bypass line(P). A flow rate controller(MFC3) is installed at the bypass line. A purge valve portion(27) is used for supplying an inert gas such as N2 or Ar. A flow rate controller(MFC1) is installed at the purge valve portion(27). A flow rate controller(MF2) is used for supplying a gas source of NH3. A plasma generator(7) induces ionization of the gas source. The second feeding valve portion(25) is used for transmitting the ionized gas to the vacuum chamber or the bypass line. A flow rate controller(MFC4) is installed at the bypass line.

Description

Gas transfer device of ALE apparatus using the remote plasma}

The present invention relates to a gas transfer device of an atomic layer forming apparatus using a remote plasma, and more particularly, to forming an atomic layer using a remote plasma in an atomic layer forming process, which is a deposition apparatus used in an oxide film forming, a nitride film, and a metal film deposition process. It relates to a gas transfer device of the device.

In general, semiconductor manufacturing processes include a wafer process, an epitaxy process, a thin film forming process, a diffusion / ion implantation process, a photolithography process, an etching process, and the like, and polycrystalline ingots from siliceous materials such as sand. After forming a single crystal wafer through the epitaxial process to form a desired device, a single crystal is formed on the wafer, and various thin films are formed in accordance with the purpose to form a device on the wafer using a diffusion or ion implantation method, After cutting such wafers into chip shapes, the lead frames are connected, and the exterior is sealed with plastics to manufacture individual semiconductor devices.

In such a semiconductor manufacturing process, various thin films are formed in every process, and are generally classified into four types according to a use. That is, an oxide film (SiO ₂ ) mainly used as a gate oxide film or a field oxide film, a mask during insulation or diffusion / ion implantation between a conductive layer, a nitride film (Si ₃ N ₄ ) mainly used as a device protection layer, and a gate instead of a metal Poly-Si film used as an electrode (poly-Si), it can be divided into a metal film used as a conductive metal electrode or connected to an external terminal by connecting the device and the device in the device.

During the thin film deposition process, the oxide film, the nitride film and the metal film are used for most of the current thin film deposition process. The wafer is placed in a vacuum chamber and the reaction gas is injected to induce a gas in a predetermined temperature atmosphere. CVD (Chemical Vapor Deposition) method to deposit on the wafer is widely used. This includes atmospheric CVD, reduced pressure CVD, plasma CVD, energy accelerated CVD, etc. In all cases, a technique that requires a small amount of impurities and a uniform thickness of the thin film is required. The use of the CVD method for the deposition of metal films has the advantage that the step coverage is good, the thin films are uniform, and the metal films can be formed on a plurality of wafers at the same time. Such a thin film deposition process is a very important process because it is a process that must necessarily be accompanied with each process.

Recently, due to the advantages of atomic layer epitaxy (ALE), which has a low impurity concentration and an excellent thin film, the active research is being applied to the manufacture of semiconductor devices.

The atomic layer forming process of the prior art uses a conventional bubble method to alternately supply different reactants contained in a carrier gas at a predetermined time interval, thereby supplying reactants to the vacuum chamber. It transfers and deposits a desired metal layer, an oxide film, or a nitride film on a wafer. This can reduce the concentration of impurities by supplying each of the reactants alternately to the chamber to form an atomic layer on the wafer, and has the advantage of controlling the thickness of the thin film as desired.

However, such an atomic layer forming process has a problem in that the temperature must be maintained at a high temperature in order to raise the reactant to an appropriate temperature or to supply activation energy of the reaction, thereby resulting in the formation of an impure thin film other than the thin film to be deposited. There is a problem that the yield of the thin film falls.

The present invention has been devised to solve the above problems, and it is possible to supply impurities (reactive radicals) used in deposition equipment used in oxide film formation, metal film and nitride film deposition process at low temperature to form impurities. It is an object of the present invention to provide a gas transfer device of an atomic layer forming apparatus using a remote plasma.

1 is a cross-sectional view showing a conventional thin film deposition apparatus according to the present invention,

2 is a block diagram showing the concept of a gas transport apparatus of an atomic layer forming apparatus using a remote plasma according to the present invention,

3 is a system diagram showing an embodiment of a gas transport apparatus of an atomic layer forming apparatus using a remote plasma according to the present invention,

4A and 4B are sequence timing diagrams according to time for controlling the valve operation of FIG. 3.

Explanation of symbols on the main parts of the drawing

4 ', 8; Container 5; Fever

7; Plasma generator P; Bypass line

15; Transfer pipe 20; Energy supply department

21; Valve driving section 23; 1st feeding valve part

25; Second feeding control section 27; Purge Valve Section

30; Valve control unit

According to the present invention, there is provided a gas transfer apparatus of an atomic layer forming apparatus using a remote plasma for supplying a first gas, a second gas, and a carrier gas for transporting the gas into a vacuum chamber. A plurality of transfer tubes for individually transporting the first and second reaction gases and the carrier gas, and energy installed in the transfer tubes and supplying excitation energy such that any one of the first and second reactor gases is ionized. Using a remote plasma including a supply unit, and valve control means for supplying one reactor excited by the energy supply and the other not excited to the chamber to induce thin film deposition on the semiconductor wafer It is achieved by the gas transfer device of the atomic layer forming apparatus.

In addition, it is preferable to configure one reactant and another not excited to be injected into the reactor alternately with time.

Here, the energy supply unit is preferably a plasma generating unit for inducing a plasma phenomenon so that any one of the first reaction gas and the second reaction gas is ionized.

In addition, it is preferable that the valve control means supplies and cleans the carrier gas between the supply of the excited one reactant and the supply of the other unexcited.

According to another aspect of the present invention, there is provided a gas transfer device of an atomic layer forming apparatus using a remote plasma which deposits a thin film on a wafer in a vacuum chamber. A plasma generator for inducing a plasma phenomenon to ionize with energy, a reactor body generator for heating a solid source including Ta to a predetermined temperature to sublimate into a reactor body, and reaction with a gas ionized by plasma of the plasma generator An apparatus for forming an atomic layer using a remote plasma comprising a plurality of valve driving units for alternately supplying a reactor gas to a gas generating unit toward the chamber, and a valve control unit for generating a control signal to operate the valve driving units individually. Achieved by a gas transfer device.

Here, the excited reactant uses NH ₃ or H ₂ , and the other non-excited reactant is TaCl ₅ .

In addition, the valve driving unit is preferably provided with a cleaning gas generating unit for supplying and cleaning the cleaning gas after supplying either the gas ionized by the plasma and the reactive gas. Gases generated in the plasma generating unit, the reactive gas generating unit, and the cleaning gas generating unit are controlled by the valve driving unit, and the supply order is composed of a reactive gas, a cleaning gas, a gas ionized by plasma, and a cleaning gas. It is preferred that the cycle be repeated many times.

Here, the cleaning gas is at least one of an inert gas containing argon and nitrogen, which is preferably a carrier gas for transferring the gas ionized by the reactor gas and the plasma to the chamber. In addition, it is preferable that a thin film having a thickness of several thicknesses is uniformly deposited on the surface of the wafer by the cycle.

In addition, the plasma generating unit and the reactive gas generating unit are preferably provided with a flow rate control unit for controlling the gas and the reactor gas ionized by the plasma to be constantly supplied.

In addition, the plasma generating unit induces a gas source of any one of NH ₃ and H ₂ to the plasma phenomenon, the reactor generating unit is a liquid of Ta (OC ₂ H ₅ ) ₅ and the reactor body of the sublimed solid source of TaCl ₅ It is preferable to direct the source to any of the reactants that have been vaporized. The reactor generating unit is preferably heated to 100-150 deg C, which satisfies the sublimation conditions of the TaCl ₅ solid source.

As a result, it is preferable that any one of TaN and Ta is deposited on the wafer by synthesizing any one of the NH ₃ and H ₂ gas sources of the plasma generating unit with the TaCl ₅ gas source of the reactor generating unit.

Here, Ta and TaN preferably comprises a diffusion barrier of the copper wiring process.

On the other hand, the valve driving unit is preferably provided with a bypass means for maintaining a constant pressure between the gas ionized by the plasma supplied to the chamber and the reactor body. Preferably, the bypass means is one of an orifice and a metering valve.

The valve driving unit may include a first feeding valve unit for supplying the reactor body of the reactor body generating unit to the wafer of the chamber, and a second feeding valve for supplying gas ionized by the plasma of the plasma generating unit to the wafer of the chamber. And a purge valve portion for supplying the cleaning gas to the chamber after each supply by the first feeding valve portion and the second feeding valve portion. Here, the carrier gas by the purge valve unit is controlled to be supplied to the chamber while supplying the reactor body according to the first feeding valve unit, and the gas ionized by the plasma according to the second feeding valve unit is supplied. While controlling the carrier gas by the purge valve unit is supplied to the chamber.

Here, in the case of the first feeding by the first feeding valve unit and the purge valve unit, among the reactor body sublimated the solid source of TaCl ₅ and the liquid source of Ta (OC ₂ H ₅ ) ₅ It is preferable to include a valve V1 and V3 of the first feeding valve unit for supplying any one to the chamber, and V5 valve for supplying the carrier gas, which is the inert gas, to the chamber together with the reactor body.

In addition, it is preferable to maintain a constant pressure by opening the V6 and V8 valves of the second feeding valve portion while the first feeding by the first feeding valve portion.

In addition, it is preferable to supply a clear gas to the chamber by opening the V4 valve of the purge valve unit after the first feeding.

And, in the case of the second feeding by the second feeding valve unit and the purge valve unit, V6 valve of the second feeding valve unit for supplying the gas ionized by the plasma from any one of the NH ₃ and H ₂ to the chamber And a V4 valve and a V4 valve of a purge valve portion for supplying the carrier gas, which is the inert gas, to the chamber together with the reactor gas.

In addition, it is preferable to maintain a constant pressure by opening the V2 valve and the V9 valve of the first feeding valve portion while being second fed by the second feeding valve portion.

In addition, it is preferable to supply the clear gas to the chamber by opening the V5 valve of the purge valve unit after the first feeding.

Hereinafter, a gas transfer apparatus of an atomic layer forming apparatus using a remote plasma according to the present invention will be described in detail with reference to the accompanying drawings. 1 is a cross-sectional view showing a conventional thin film deposition apparatus according to the present invention, Figure 2 is a block diagram showing the concept of a gas transfer device of the atomic layer forming apparatus using a remote plasma according to the present invention, Figure 3 FIG. 4A and FIG. 4B are sequence timing diagrams for controlling the valve operation of FIG. 3 according to an embodiment of the gas transfer apparatus of the atomic layer forming apparatus using the remote plasma.

First, as shown in FIG. 1, a conventional thin film deposition apparatus includes a reactor body transfer device 1 for alternately transferring a plurality of reactor bodies, and a susceptor 3 on which a wafer 2 is seated. And a vacuum chamber 4 in which the susceptor 3 is accommodated so that the gas transferred from the gas transfer device 1 can be deposited on the wafer 2.

As shown in FIG. 2, the gas transfer apparatus includes a reaction gas obtained by subliming a solid source of TaCl ₅ and a first reactive gas, which is a gas source of NH ₃ and H ₂ , and Ta (OC ₂ H ₅ ) ₅ . A second reactor gas, which is a reactor gas in which a liquid source is vaporized, a plurality of transfer pipes 15 for guiding the carrier gas for transferring the reactor gas to the vacuum chamber 4, and installed in the transfer pipe 15 And an energy supply unit 20 for supplying excitation energy to the first reaction gas and ionizing the same by using a plasma phenomenon, and installed in the transfer pipe 15 and ionized by plasma excited by the energy supply unit 20. And a valve control unit 30 for supplying the first and second reactors to the vacuum chamber 4 alternately to induce thin film deposition of the semiconductor wafer. Here, the energy supply unit 20 is a plasma generation unit for inducing the first reaction gas to be ionized by the excited plasma gas by a predetermined high frequency power source and a high frequency of 13.56 MHz.

The valve control unit 30 alternately supplies the gas ionized by the plasma and the second reaction gas, supplies the first and second reaction gases, respectively, and then supplies the carrier gas to provide a gas atmosphere in each process. After cleaning, the gas transported with the gas ionized by the plasma and the second reaction gas are alternately injected into the vacuum chamber 4. At the same time, the gas supplied is bypassed to maintain a constant pressure in the vacuum chamber 4.

As shown in FIG. 3, an embodiment of the present gas transfer apparatus includes: a container 4 'for storing a reactant of a solid source of TaCl ₅ , which is a reactant including Ta, to introduce a reactant into a reaction chamber; Is installed on the outer surface of the vessel (4 ') and the heating unit ₅ for heating the reaction solid to a constant temperature to sublimate to the TaCl ₅ reactor body, and the flow control unit for controlling the generated reactor body in a certain amount (6) ) And a first feeding valve unit (V1, V2, V3, V9, V11) (23) for transferring the reaction medium generated over time to the vacuum chamber or the bypass line (P). At this time, the heat generating unit 5 heats the TaCl ₅ source solids to 100-150 deg C so that a certain reactor sublimates. In addition, the bypass line is provided with a flow controller (MFC 3) so that a constant amount of gas is controlled to maintain a constant pressure of the vacuum chamber (4). Here, the vessel 4 ′ and the heat generating unit 5 may be collectively referred to as a reactor body generating unit for heating a solid source including Ta to a predetermined temperature to sublimate the reactor body.

In addition, a purge valve unit (V4, V5, V13) (27) for supplying an inert gas, that is, N ₂ and Ar, etc. in order to remove the reactant initially introduced after transferring the reactant to the vacuum chamber 4 from the vacuum chamber. Is composed. The purge valve portions V4, V5, V13 27 are provided with a flow controller MFC 1 so as to be controlled in a constant amount.

The flow rate control unit (MFC 2) for constantly supplying a gas source containing N, that is, a gas source of NH ₃ , and the gas at a high frequency of 13.56MHz having a predetermined energy, that is, a constant power source so that the gas source causes a plasma phenomenon The plasma generator 7 which excites the source to induce ionization and the gas source excited from the plasma generator 7, ie, the gas ionized by the plasma of NH ₃ , are discharged through the vacuum chamber or the bypass line P. The second feeding valve unit (V6, V7, V8, V10) 25 for sequentially conveying is composed of. At this time, the bypass line is provided with a flow controller (MFC 4) so that a constant amount is controlled. The first feeding valve unit (V1, V2, V3, V9, V11) (23), the second feeding valve unit (V6, V7, V8, V10) (25) and the purge valve unit (V4, V5, V13) (27) allows the gas ionized by the plasma of the plasma generating unit 7 and the reactor gas of the reactive gas generating unit to be alternately supplied toward the chamber, and reacts with the gas ionized by the plasma. After supplying any one of the gases it may be referred to collectively as the valve driving unit 21 for supplying and cleaning the cleaning gas sequentially.

Here, the first feeding valve unit (V1, V2, V3, V9, V11) 23, the second feeding valve unit (V6, V7, V8, V10) (25) and the purge valve unit (V4, V5) V13 and 27 are controlled by a valve control unit (not shown), that is, the valve control unit controls the first feeding valve unit 23 to supply a reactive gas of TaCl ₅ to the vacuum chamber 4. Afterwards, the purge valve unit is controlled to clean the inside of the vacuum chamber 4 with an inert gas including N ₂ , Ar, and the like. Then, the second feeding valve unit 25 is controlled to the plasma of NH ₃ . After the ionized gas is supplied to the vacuum chamber 4, the purge valve part 27 is controlled to clean the inside of the vacuum chamber 4 with an inert gas including N ₂ and Ar. The gas at the time of cleaning is a carrier gas. As a result, the valve control unit may include the first feeding valve unit V1, V2, V3, V9 and V11 23, the second feeding valve unit V6, V7, V8 and V10 25, and the purge valve unit. (V4, V5, V13) (27) is operated in cycle units consisting of the feed of TaCl ₅ reactor gas, purge with an inert gas, ionized gas with NH ₃ plasma, purge with an inert gas. The cycle can be repeated several times depending on the designed process. At this time, the valve control unit controls the first feeding valve unit (V1, V2, V3, V9, V11) 23 and the second feeding valve unit (V6, V7, V8, V10) 25 to TaCl _The carrier gas is fed simultaneously so that the ionized gas is fed by the reactor gas of ₅ or the plasma of NH ₃ to induce rapid transfer.

On the other hand, when a liquid containing Ta is used as a reactant, that is, a liquid source of Ta (OC ₂ H ₅ ) _5, the liquid containing Ta is extracted from the container 8 in which the reactant is stored by the pressurized gas and the liquid extracted by pressurizing at a constant pressure. A pressurized gas extraction section 9 for removing pressurized gas to convey only pure reaction liquid, a liquid flow controller 10 for controlling a constant amount of liquid source to be supplied, and a predetermined temperature for vaporizing the conveyed liquid. It consists of the evaporator 11 to heat. The reactor body derived from the evaporator 11 is connected to the aforementioned first feeding valve unit (V1, V2, V3, V9, V11) 23 and is led to a vacuum chamber or bypass line, and at the same time The two feeding valve unit 25 and the purge valve unit 27 is interlocked with the gas ionized by the plasma and the cleaning gas to form a cycle.

And, the operation of the valve control unit is made as shown in Figure 4a, the vertical axis of Figure 4a is shown in the controller V1 to V10 Open / Close and the horizontal axis represents the time in 1 to 6 steps, respectively.

Steps 1 to 6 are for reactant delivery methods for the atomic layer forming apparatus. Steps 1 and 2 are pre-process steps for rapidly maintaining the initial process after the wafer is initially introduced into the reaction chamber. Has a fixed cycle in which the first reaction gas, the second reaction gas, and the cleaning gas are repeated one feed, one purge, one feed, and two purge with each step continuously. In particular, FIG. 4A illustrates a method of proceeding a process while continuously turning on / off a remote plasma, and illustrates a case where the remote plasma is introduced into the vacuum chamber and the bypass flows.

That is, the feeding (A) of the reactor body in which the solid source of TaCl ₅ is sublimed and the reactor body in which the liquid source of Ta (OC ₂ H ₅ ) ₅ is vaporized is provided in the first feeding valve unit (V1, V2, V3, V9, V11). V23 and V3 valves are opened in the state that 23) is blocked to supply the reactor gas, and the carrier gas is supplied according to the opening of the V5 valve among the purge valve parts V4, V5, and V13. To the vacuum chamber. At this time, the V6 valve and the V8 valve are opened to bypass the constant pressure in the transfer pipe. In addition, purge (A) of an inert gas including a carrier or a cleaning gas, such as N ₂ and Ar, opens the V4 valve among the purge valve portions (V4, V5, V13) 27 to clean the feeding feed pipe on the V3 valve side. At this time, the pressure on the first feeding side is adjusted by opening (bypassing) the valves V2 and V9, and the pressure on the second feeding side is adjusted by opening (bypassing) the valves V6 and V8. Here, the V13 valve is open and the rest are blocked.

The feeding B of the gas ionized by the NH ₃ plasma is ionized by the plasma by opening the V6 and V7 valves while the second feeding valve portions V6, V7, V8, and V10 25 are blocked. The gas is supplied to the vacuum chamber and the carrier gas is supplied to the vacuum chamber according to the opening of the V4 valve among the purge valve units V4, V5, and V13. At this time, the V2 valve and the V9 valve are opened (bypassed) to maintain a constant pressure in the feed pipe. Thereafter, the purge B opens the V5 valve among the purge valve portions V4, V5, and V13 27 to clean the feeding feed pipe on the V7 valve side, and at this time, opens the V1 valve and the V2 valve (bypassing). To adjust the pressure on the first feeding side and open (bypass) the V8 and V10 valves to adjust the pressure on the second feeding side.

The gas transfer device as described above may deposit a TaN thin film on a wafer in a vacuum chamber, and if the process is performed in one cycle unit as described above, the thickness of the thin film according to the design may be adjusted. At this time, the thin film of one cycle is deposited to a thickness of several microseconds.

Although not shown, in order to deposit a Ta thin film on a wafer in a vacuum chamber, the process may be performed as described above using an H ₂ gas source that does not contain nitrogen (N) instead of the NH ₃ gas source of the gas transfer device. .

On the other hand, when the process proceeds while maintaining the remote plasma continuously, as shown in Figure 4b to control the valve to maintain a constant pressure in the energy supply to maintain a continuously stable plasma.

That is, the feeding (A) of the reactor body in which the solid source of TaCl ₅ is sublimed and the reactor body in which the liquid source of Ta (OC ₂ H ₅ ) ₅ is vaporized is provided in the first feeding valve unit (V1, V2, V3, V9, V11). Valve 23 and V3 are opened to supply the reactor gas, and the carrier gas is supplied according to the opening of the valve V5 among the purge valve parts V4, V5, and V13. To the vacuum chamber (4). At this time, the V6 valve and the V8 valve are opened to bypass the constant pressure in the transfer pipe. In addition, the purge (A) of the inert gas containing a carrier or a cleaning gas, such as N ₂ and Ar, to open the V4 valve of the purge valve unit (V4, V5, V13) to clean the feeding feed pipe on the valve V3 side, At this time, the pressure on the first feeding side is adjusted by opening (bypassing) the valves V2 and V9, and the pressure on the second feeding side is adjusting by opening (bypassing) the valves V6 and V8. Here, the V13 valve is open and the rest are blocked.

Feeding (B) of the gas ionized by the plasma of NH ₃ is the V6 valve and V7 valve is opened in the state that the second feeding valve section (V6, V7, V8, V10) (25) is blocked and ionized by the plasma The gas is supplied to the vacuum chamber and the carrier gas is supplied to the vacuum chamber according to the opening of the V4 valve among the purge valve units V4, V5, and V13. At this time, the V2 valve and the V9 valve are opened (bypassed) to maintain a constant pressure in the feed pipe. Thereafter, the purge B opens the V5 valve among the purge valve portions V4, V5, and V13 to clean the feeding conveying pipe on the V7 valve side, and at this time, the V1 valve and the V2 valve are opened (bypassed) to remove the valve. 1 Adjust the pressure on the feeding side and open (bypass) the V6 and V8 valves to adjust the pressure on the second feeding side.

In the case where the process is performed while the plasma is continuously ON / OFF, the plasma energy can be saved to turn ON only when the gas ionized by the plasma is fed, and the operation system during purge can be precisely There are advantages and disadvantages to design. In the case where the plasma is continuously maintained, the operation system at the time of purge may be designed to be rather simple, and there are advantages and disadvantages of high consumption of plasma energy.

The gas transfer device as described above can deposit TaN & Ta thin films on the wafer in the vacuum chamber, and if the process is performed in one cycle unit as described above, the desired thin film thickness can be adjusted according to the design. At this time, the thin film of one cycle is deposited to a thickness of several microseconds.

Therefore, NH ₃ in the case of using the TaCl ₅ in the reaction gas to write that for forming the TaN thin film, the gas excited by a remote plasma using NH _3, and TaCl5 solid sources are two reaction gas to be carried forward by the solid feed mechanism And inert gases are sequentially applied with time as shown in FIGS. 4A and 4B. This TaN thin film deposited by atomic layer formation process by remote plasma is used as diffusion barrier of copper wiring process such as copper, and the transfer gas is replaced with hydrogen to form remote plasma. When Ta is formed and transported, Ta thin film is formed, and the TaN & Ta thin film is used in the copper wiring diffusion barrier process and the high dielectric diffusion barrier process of the semiconductor process. When TaCl ₅ & NH ₃ and TaCl ₅ & H ₂ are used as reactants, H ₂ & NH ₃ is ionized by remote plasma and then excited gas and TaCl ₅ is solid source It is transferred to the reaction chamber through and transported continuously over time by the atomic layer forming process.

The present invention enables the supply of reactants used in the semiconductor thin film deposition equipment for the atomic layer formation process used in the oxide film formation, metal film and nitride film deposition process at a low temperature instead of high thermal energy, thereby preventing impurities from being formed. By activating the reactants with the energy excited by and injecting them continuously into the reaction vessel over time, it is possible to form a good thin film, especially by using the excited reactants to suppress the generation of impurities and the thin film at low temperature Since the formation is possible, there is an effect that the yield is improved.

Claims (25)

Gas transfer device of the atomic layer forming apparatus using a remote plasma supplying the first reaction gas, the second reaction gas and the carrier gas for transporting the reactor gas into the vacuum chamber A plurality of transfer tubes for individually transporting the first and second reactor gases and the carrier gas; An energy supply unit installed in the transfer pipe and configured to supply excitation energy so that any one of the first and second reactors is ionized; And a valve control means for supplying one reactor body excited by the energy supply unit and another reactor body not excited to the chamber to induce thin film deposition on a semiconductor wafer. Gas transfer device of the atomic layer forming apparatus used. The method of claim 1, The excited one and the other non-excited one of the reactor is a gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that configured to be injected into the reactor alternately with time. The method of claim 1; The energy supply unit is a gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that the plasma generating unit for inducing a plasma phenomenon so that any one of the first reaction gas and the second reaction gas is ionized. The method of claim 1; The valve control means is a gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that for supplying and cleaning the carrier gas between the supply of the excited one and the other non-excited reactor supply. An atomic layer forming apparatus using a remote plasma for depositing a thin film on a wafer in a vacuum chamber; A plasma generator for inducing a plasma phenomenon to ionize a source gas including any one of N and H with a predetermined excitation energy; A reactor body generator for heating the source solid including Ta to a predetermined temperature to sublimate the reactor body; A plurality of valve driving units configured to alternately supply the gas ionized by the plasma of the plasma generating unit and the reactive gas of the reactive gas generating unit toward the chamber; And a valve control unit for generating a control signal to operate the valve driving unit individually. The method of claim 5, The excited reactant is using NH ₃ or H ₂ , the other non-excited reactant is TaCl ₅ gas transfer device of the atomic layer forming apparatus using a remote plasma. The method of claim 5; The valve driving unit is provided with a cleaning gas generating unit for supplying and cleaning the cleaning gas after supplying any one of the gas ionized by the plasma and the reactive gas gas transfer of the atomic layer forming apparatus using a remote plasma Device. The method of claim 7; Gases generated in the plasma generating unit, the reactive gas generating unit, and the cleaning gas generating unit are controlled by the valve driving unit, and the supply order is composed of a reactive gas, a cleaning gas, a gas ionized by plasma, and a cleaning gas. A gas transfer apparatus for an atomic layer forming apparatus using a remote plasma, characterized in that the cycle is repeated a plurality of times. The method of claim 8; The cleaning gas is at least one of an inert gas containing argon and nitrogen, which is a carrier gas for transferring the gas ionized by the reactor gas and the plasma to the chamber. Gas transfer device of the device. The method of claim 8; The gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that a thin film having a thickness of several thicknesses is uniformly deposited on the surface of the wafer by the cycle. The method of claim 5; And a flow rate controller for controlling the gas and the reactor ionized by the plasma to be uniformly supplied to the plasma generator and the reactor body generator, respectively. The method of claim 5; The plasma generating unit induces a gas source of any one of NH ₃ and H ₂ into a plasma phenomenon, and the reactive gas generating unit generates a liquid source of Ta (OC ₂ H ₅ ) ₅ and a reactive gas obtained by sublimating a solid source of TaCl ₅ . A gas transfer device of an atomic layer forming apparatus using a remote plasma, characterized in that guided to any one of the vaporized reactor. The method of claim 12; The gas generation apparatus of the atomic layer forming apparatus using a remote plasma, characterized in that the heating unit is heated to 100-150 deg C, the sublimation conditions of the TaCl ₅ solid source is satisfied. The method of claim 12; An atomic layer using a remote plasma, characterized in that any one of Ta and TaN is deposited on the wafer by synthesizing any one of the NH ₃ and H ₂ gas source of the plasma generating unit to the TaCl ₅ gas source of the reactor generation unit Gas transfer device of the forming apparatus. The method of claim 14; The Ta is made of a diffusion barrier of the high dielectric constant process, the TaN is a gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that made of a diffusion barrier of the copper wiring process. The method of claim 5; And a bypass means in which the valve driving unit maintains a constant pressure between the gas ionized by the plasma supplied to the chamber and the reactor body, the gas transfer device of the atomic layer forming apparatus using the remote plasma. The method of claim 16; The bypass means is a gas transfer device of an atomic layer forming apparatus using a remote plasma, characterized in that any one of an orifice (orifice) and a metering valve (metering valve). The method of claim 5; The valve driving unit, A first feeding valve unit for supplying a reactor body of the reactor body generating unit to a wafer of the chamber; A second feeding valve unit for supplying a gas ionized by the plasma of the plasma generating unit to a wafer of the chamber; And a purge valve portion for supplying the cleaning gas after the supply by the first feeding valve portion and the second feeding valve portion toward the chamber. The method of claim 18; Controlling the carrier gas supplied by the purge valve unit to be supplied to the chamber while supplying the reactor body according to the first feeding valve unit; The gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that to control the carrier gas supplied by the purge valve unit to the chamber while supplying the gas ionized by the plasma according to the second feeding valve unit. . The method of claim 19; In case of the first feeding by the first feeding valve unit and the purge valve unit, A V1 valve and a V3 valve of a first feeding valve unit for supplying one of the reactor gas sublimated the solid source of TaCl ₅ and the reactor gas vaporized the liquid source of Ta (OC ₂ H ₅ ) ₅ to the chamber; And a V5 valve of a purge valve unit for supplying the carrier gas, which is the inert gas, to the chamber together with the reactor gas. The method of claim 20; The gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that the first feeding by the first feeding valve unit while maintaining a constant pressure by opening the V6 valve and V8 valve of the second feeding valve unit. The method of claim 19; The gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that for supplying a clear gas to the chamber by opening the V4 valve of the purge valve unit after the first feeding. The method of claim 19; In case of the second feeding by the second feeding valve unit and the purge valve unit, A V6 valve and a V7 valve of a second feeding valve unit for supplying a gas ionized by plasma from any one of NH ₃ and H ₂ to the chamber; And a V4 valve of a purge valve unit for supplying the carrier gas, which is the inert gas, to the chamber together with the reactor gas. The method of claim 23; And a second feeding by the second feeding valve unit to open a V2 valve and a V9 valve of the first feeding valve unit to maintain a constant pressure. The method of claim 24; The gas transfer device of the atomic layer forming apparatus using a remote plasma, characterized in that to supply a clear gas to the chamber by opening the V5 valve of the purge valve unit after the first feeding.