KR100472993B1 - thin film deposition method and the apparatus the same - Google Patents

Abstract

According to an embodiment of the present invention, a first supply pipe is provided between a first gas storage device and a chamber via a remote plasma generator, and the first gas storage device and the chamber are used to selectively use the first gas as a reaction gas and a purge gas. In the method of depositing a thin film on a wafer using a thin film deposition apparatus comprising a second supply pipe directly connected,

A first step of introducing a first gas in a plasma state into the chamber through the first supply pipe and adsorbing it onto a surface of a wafer; A second step of introducing a gaseous first gas into the chamber through the second supply pipe to purge residual material; A third step of introducing a second gas into the chamber and reacting with the first gas adsorption layer adsorbed on a surface of a wafer to deposit a thin film; And a fourth step of purging the residual material by introducing a gaseous first gas into the chamber through the second supply pipe. It also provides a thin film deposition apparatus for implementing this method.

Description

Thin film deposition method and the apparatus the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing, and more particularly, to a method of depositing a thin film on a wafer using a remote plasma and a thin film deposition apparatus therefor.

A semiconductor device is a high density integrated circuit (LSI) fabricated through an epitaxial process, a thin film forming process, a diffusion / ion implantation process, a photolithography process, an etching process, etc. on a wafer, which is a substrate. In particular, the thin film formation process is inevitably required to implement each component of the semiconductor device, and is a very important process that is repeated several times in the entire process of semiconductor manufacturing.

The resulting thin film can be classified into four types according to the use, which is an oxide film (SiO ₂ ) mainly used as a gate oxide film or a field oxide film, and a mask or device protective layer for insulating or diffusion / ion implantation between conductive layers. Nitride film (Si ₃ N ₄ ) used mainly, poly-silicon film (poly-Si) used as a gate electrode instead of a metal, and used as a metal electrode for connecting components in a semiconductor device or connected to an external terminal That is the metal film.

As a method of forming these thin films, the uniformity and the step coverage characteristics are relatively excellent, and chemical vapor deposition (CVD), which has excellent productivity, is widely used. The eggplant is loaded with a wafer in a chamber, and then a plurality of reaction gases are simultaneously injected into the reaction zone to deposit chemical reaction products therebetween on the wafer surface.

In this case, in order to induce an easy chemical reaction between the plurality of reaction gases, a high temperature is usually provided in the chamber. In particular, a high temperature of 700 ° C. or higher is required to implement a semiconductor nitride film or an oxide film. That is, one material selected from NH ₃ , H ₂ , and O ₂ is used as the first reaction gas for implementing the semiconductor nitride film (Si ₃ N ₄ ) or the oxide film (SiO ₂ ), and SiH ₄ , Si ₂ is used as the second reaction gas. One material selected from H ₆ is used. At this time, since the first reaction gas NH ₃ , H ₂ , O _2, etc. is a very stable compound, a high temperature of 700 ° C. or higher is required to break the bond.

However, such a high temperature process has a problem in that the device is damaged by applying unnecessary damage to the wafer along with disadvantages of difficult configuration and control of the device.

Recently, one of the methods of depositing a thin film through chemical reaction of gaseous materials has been introduced an atomic layer deposition method, abbreviated as Atomic Layer Deposition (ALD), which is uniformity and step coverage Although the coverage is very excellent, it has the merit of realizing a high purity thin film.

Although it is classified as a chemical vapor deposition method in that a chemical reaction is used between two or more gaseous substances, the chemical vapor deposition method usually flows a plurality of reaction gases into a reaction zone in which a wafer is present, thereby producing a reaction product thereof. Unlike the deposition on the surface from the top, the chemical reaction between the reaction gases is limited only at the wafer surface.

Therefore, a purge process is required to inject a plurality of reaction gases into the reaction zone sequentially and to remove residual substances in the reaction zone before and after each reaction gas inflow step, for example, an atomic layer deposition method. Referring to the case of depositing a compound thin film of A + B on the surface of the object through the first reaction gas containing A into the reaction zone in which the wafer, which is the object exists, to adsorb the A material on the surface of the object The first step proceeds.

Subsequently, a first purge process of removing all the remaining materials in the reaction zone except for the A material adsorbed on the surface of the object proceeds to the second step, and then introduces a second reaction gas containing B into the reaction zone. The third step proceeds. At this time, since the adsorption layer of the A material exists on the upper surface of the wafer, a part of the B material included in the second reaction gas introduced into the reaction zone reacts with the A material adsorption layer on the wafer surface to form a thin film of A + B compound. Finally, the second purge process for removing all the gaseous substances present in the chamber proceeds to the fourth step.

In the case where the first to fourth steps are performed in order once, a very thin film of A + B compound is deposited on the surface of the wafer, and the first step described above is performed until the thin film of the desired thickness is realized. By repeating the thin film deposition cycle defined in the fourth step to several to several hundred times in order to complete the process.

Accordingly, the thin film deposition apparatus for the atomic layer deposition method, as shown in FIG. 1, stores a chamber 20 defining a closed reaction region in which a wafer is seated therein, and stores a reaction gas introduced into the chamber 20. Gas storage unit 40 is included.

In this case, the gas storage unit 40 may include a first gas storage device 42a for storing the first reaction gas S1 in the first step and a second purge gas P1 for the second step. Fourth gas storage for storing the gas storage device 42b, the third gas storage device 42c for storing the second reaction gas S2 in the third step, and the second purge gas P2 in the fourth step. Each chamber 42 is divided into a device 42d, and the chamber 20 has a branched inlet tube 22 through which each gaseous substance can be introduced, and a discharge tube 24 and a distal end thereof, which discharge gaseous substances in the internal reaction zone. It includes a pump P installed.

In addition, the gas transfer unit 60 includes a plurality of valves between the gas storage unit 40 and the inlet pipe 22 of the chamber 20 to sequentially introduce the respective gaseous substances into the chamber 20. It is provided, which is the first to fourth gas storage devices (42a, 42b, 42c, 42d) and the first to fourth supply pipes (42a-1, 42b-1, 42c-1) connecting the inlet pipe 22, respectively , 42d-1 and the first to fourth intermittent valves V1, V2, V3, and V4 mounted on the first to fourth supply pipes 42a-1, 42b-1, 42c-1, and 42d-1, respectively. ) Is included.

Therefore, the first reaction gas S1 stored in the first gas storage device 42a is intermittently introduced into the chamber 20 by the first intermittent valve V1 that performs on / off operation. Similarly, the first purge gas P1 is connected to the second intermittent valve V2, the second reaction gas S2 is connected to the third intermittent valve V3, and the second purge gas P2 is connected to the fourth intermittent valve V4. The order and time of introduction into the chamber 20 are respectively determined.

In addition, the gas transfer unit 60, the first to fourth gas storage devices (42a, 42b, 42c, 42d) and the first to the first gas so that each of the above-described gaseous material is introduced into the chamber 20 at an equal pressure. A branch which is branched from the first to fourth supply pipes 42a-1, 42b-1, 42c-1, 42d-1 between the fourth intermittent valves V1, V2, V3, V4 and connected to the pump P, respectively. 1 to 4 bypass tubes 62, 64, 66 and 68, each of which includes 5 to 5th bypass tubes 62, 64, 66 and 68, respectively. 8 When the intermittent valves V5, V6, V7, and V8 are mounted, any one of the first to fourth valves V1, V2, V3, and V4 is turned off so that the gaseous substance of the gas storage device corresponding thereto is turned off. To be discharged to the pump (P).

Therefore, the first to fourth valves V1, V2, V3, and V4 are sequentially driven, respectively, and the fifth to eighth valves V5, V6, V7, and V8 are respectively complementarily driven correspondingly. In addition, a plurality of gaseous substances are introduced into the chamber 20 at a constant and constant pressure. For example, the first to fourth steps are sequentially performed one time through a general atomic layer deposition apparatus. In the cycle, the driving relationship of the plurality of valves is summarized in Table 1 below. At this time, V1 to V8 indicate the first to eighth intermittent valves, respectively.

TABLE 1

V1 V2 V3 V4 V5 V6 V7 V8 First step On off off off off On On On 2nd step off On off off On off On On 3rd step off off On off On On off On 4th step off off off On On On On off

However, the thin film deposition apparatus using this general atomic layer deposition method includes a very large number of valves (V1 to V8), and its structure and operation are very complicated, and it is necessary to enlarge the footprint for installation. As a result, it becomes the cause which raises the manufacturing cost of a semiconductor element.

In addition, one of the first gas storage device 42a or the third gas storage device 42c is selected from NH ₃ , O ₂ , and H ₂ to form an oxide film or a nitride film on the upper surface of the wafer by using an atomic layer deposition method. The gaseous material of is stored, and the other one of SiH ₄ , Si ₂ H _{6 It} is stored in the selected material, the chamber 20 is typically required a high temperature environment of 530 ℃ or more.

In order to overcome the disadvantage of the high temperature process, NH _3, O _2, the gaseous substances of H ₂ and so on before being introduced into the chamber 20 were also a method for this introduction to the plasma (plasma), in the figure for example NH ₃ Assuming gaseous materials such as, O ₂ , H _2, and the like are stored in the first gas storage device 42a, a remote (between the first gas storage device 42a and the first intermittent valve V1, as shown). remort) Plasma generator 44 is installed.

Such a remote plasma generator 44 has a principle of exciting a gaseous material passing through itself by generating a microwave inside the plasma, such as NH ₃ , H ₂ , O ₃ The material is excited in a plasma state that is easy to react before entering the chamber 20.

Therefore, the remote plasma generator 44 has an advantage of reducing the internal temperature of the chamber 20.

However, although the thin film deposition apparatus using these general remote plasma generators 44 has the advantage of lowering the temperature in the chamber 20 somewhat, the method of atomic layer deposition which repeats the first to fourth steps several times. Since it is not an improvement plan for itself, it cannot contribute to productivity improvement, which is a chronic disadvantage of the general atomic layer deposition method.

In addition, as a plurality of control valves V1 to V8 and the remote plasma generator 44 are included in the gas transfer part 40, the configuration of the device becomes excessively complex, which in turn increases the possibility of malfunction and reduces the reliability of the device. Have

The present invention has been made to solve the above problems, when a specific gaseous material decomposed at high temperature is used as the reaction gas, a thin film deposition method that can greatly increase the productivity without affecting the purity and properties of the thin film And it is an object to provide a thin film deposition apparatus that enables this.

The present invention provides a first supply pipe via a remote plasma generator between the first gas storage device and the chamber to selectively use the first gas as a reaction gas and a purge gas in order to achieve the above object, and A method of depositing a thin film on a wafer by using a thin film deposition apparatus comprising a first gas storage device and a second supply pipe directly connecting the chamber, the first gas in a plasma state through the first supply pipe. A first step of introducing the adsorbent into the chamber and adsorbing the adsorbent onto the surface of the wafer; A second step of introducing a gaseous first gas into the chamber through the second supply pipe to purge residual material; A third step of introducing a second gas into the chamber and reacting with the first gas adsorption layer adsorbed on a surface of a wafer to deposit a thin film; And a fourth step of purging the residual material by introducing a gaseous first gas into the chamber through the second supply pipe. In this case, the first to fourth steps are provided. The thin film deposition cycle may be repeated several times by sequentially repeating the thin film deposition cycle. Preferably, the first gas has a pyrolysis temperature of 500 ° C. or more, wherein the first gas is one selected from NH ₃ , O ₂ , and H ₂ , and the second gas may be selected from Si ₂ H ₆ and SiH ₄ . In addition, the first gas in the plasma state is generated by the remote plasma generator, in which the remote plasma generator preferably uses a microwave of 2.45 GHz. a chamber defining a closed reaction zone in which a wafer is seated, and including an inlet pipe for introducing external gaseous material into the reaction zone, and a discharge pipe for discharging the gaseous material in the reaction zone to the outside; A first gas storage device for storing a first gas; A first supply pipe having one end connected to the first gas storage device and the other end connected to the inlet pipe; A remote plasma generating apparatus mounted on the first supply pipe and configured to excite a gaseous substance flowing through the first supply pipe into plasma; A second supply pipe having one end connected to the first gas storage device and the other end connected to the inlet pipe; A second gas storage device for storing a second gas; A third supply pipe having one end connected to the second gas storage device and the other end connected to the inlet pipe; It provides a thin film deposition apparatus comprising a control means for controlling the flow of the fluid of the first to third supply pipe. At this time, one end of the second supply pipe is branched from the first supply pipe between the first gas storage device and the remote plasma generator, and the other end is connected to the first supply pipe between the remote plasma generator and the inlet pipe. The control means includes a first intermittent valve mounted on a first supply pipe between the remote plasma generator and the other end of the first supply pipe; A second intermittent valve mounted to the second supply pipe; And a third intermittent valve mounted to the third supply pipe. In particular, the pump (pump) attached to the end of the discharge pipe of the chamber; A first bypass pipe having one end branched from the first supply pipe between the other end of the second supply pipe and the inlet pipe, and the other end connected to the pump; A second bypass pipe having one end branched from a third supply pipe between the second gas storage device and the third intermittent valve and the other end connected to the pump; A fourth intermittent valve mounted on a first supply pipe between one end of the first bypass pipe and the inlet pipe; A fifth intermittent valve mounted to the first bypass pipe; And a sixth intermittent valve mounted to the second bypass pipe, wherein the remote plasma generator uses a microwave of 2.45 GHz. In addition, the first gas is characterized in that the pyrolysis temperature is at least 500 ℃, in particular the first gas is selected from NH ₃ , O ₂ , H ₂ , the second gas selected from Si ₂ H _6, SiH ₄ One of the characteristics of the present invention will be described in detail below with reference to the accompanying drawings.

The present invention is characterized in that in depositing a thin film on the upper surface of the wafer, when a specific gaseous material decomposed at high temperature is used as a reaction gas, the gaseous material is excited by plasma before entering the chamber. The schematic structure of the deposition apparatus is shown in FIG.

The thin film deposition apparatus according to the present invention includes a chamber 120 defining a closed reaction region in which a wafer is seated therein, and a gas storage unit 140 storing a plurality of gaseous substances introduced into the reaction region. In this case, as the plurality of gaseous materials are sequentially introduced into the chamber 20, the atomic layer deposition method reacts only on the wafer surface.

To this end, the gas storage unit 140 includes a plurality of gas storage devices each storing a different gaseous material, in particular, the present invention, unlike the general case, the first gas storage device for storing the first reaction gas (S1) ( 142a and the second gas storage device 142b for storing the second reaction gas S2 are provided.

In addition, the chamber 120 includes an inflow pipe 122 branched to supply the first reaction gas S1 and the second reaction gas S2, and a discharge pipe 124 capable of discharging gaseous substances in the reaction zone. ) And a pump (P) attached to the end thereof, and the gas transfer unit 160 according to the present invention is installed between the gas storage unit 140 and the inlet pipe 122 of the chamber 120, respectively. The gaseous material of the to be supplied to the chamber 120 in a certain order.

The gas transfer part 140 included in the thin film deposition apparatus according to the present invention includes a first supply pipe 142a-1 and a second supply pipe 142a-2 which connect the first gas storage device 142a and the inlet pipe 122, respectively. ) And a third supply pipe 142b-1 connecting the second gas storage device 142b and the inlet pipe 122, wherein the remote plasma generator 144 is provided in the first supply pipe 142a-1. It is mounted to excite the gaseous substances flowing therein into the plasma.

Also included are control means for controlling the gaseous material flowing along these first to third supply pipes (142a-1, 142a-2, 142b-1), in which case the second supply pipe (142a-2) is preferably It is advantageously connected to the first supply pipe 142a-1 between the remote plasma generator 144 and the inlet pipe 122.

That is, one end of the second supply pipe 142a-2 is branched on the first supply pipe 142a-1 between the first gas storage device 142a and the remote plasma generator 144 as shown, or the first gas is discharged. It may be connected to the storage device 142a, the other end thereof is preferably connected to the first supply pipe 142a-1 between the remote plasma generator 144 and the inlet pipe 122, wherein the control means is a remote plasma generation A first intermittent valve V1 mounted on the first supply pipe 142a-1 between the device 144 and the other end of the second supply pipe 142a-2 and a second supply pipe 142a-2, The second intermittent valve V2 which is complementary to the first intermittent valve V1 and the third intermittent valve V3 mounted to the third supply pipe 142b-1 may be configured.

Therefore, the first reaction gas S1 stored in the first gas storage device 142a is selectively supplied by the first supply pipe 142a-1 or the first supply valve by interlocking the first intermittent valve V1 and the second intermittent valve V2. 2 flows into the supply pipe 142a-2. At this time, since the remote plasma generator 144 is installed in the first supply pipe 142a-1, the first reaction gas S1 in the plasma state passes through the chamber 120. Is introduced into the gas, and the first reaction gas S1 in a gaseous state is supplied through the second supply pipe 142a-2.

In addition, a gaseous second reaction gas S2 is introduced into the chamber 120 through the third supply pipe 142b-1. In this case, in particular, the first reaction gas S1 stored in the first gas storage device 142a. ) Is a pyrolysis temperature of 500 ℃ or more, in particular one selected from NH ₃ , O ₂ , H ₂ , the second reaction gas (S2) stored in the second gas storage device (142b) of Si ₂ H _6, SiH ₄ It is preferable that it is the selected one.

At this time, the first to third intermittent valves V1, V2, and V3 interlock with each other to supply the first reaction gas S1 in the initial plasma state into the chamber 120, and then the first reaction gas S1 in the gas state. , The second reaction gas S2, and the first reaction gas S1 in a gas state.

That is, the thin film deposition method according to the present invention includes a first step of introducing a first reaction gas (S1) in a plasma state into the reaction region of the chamber 120 and adsorbing it onto the wafer surface, and a first gas state. A second step of purging the residual material in the reaction region by introducing the reaction gas (S1), and introducing a second reaction gas (S2) and reacting with the first reaction gas adsorption layer adsorbed on the wafer surface to form a thin film And a fourth step of purging the residual material in the reaction zone by introducing a first reaction gas (S1) in the gaseous state into the reaction zone of the chamber 120 again. Compared with, the first reaction gas S1 in the plasma state is the first gas, the first reaction gas S1 in the gas state is the first and second purge gases, and the second reaction gas S2 is the second gas. It is used as a gas.

At this time, the process temperature in the chamber is 500 ° C. or lower. At this temperature, since gaseous substances such as NH ₃ , O ₂ , and H ₂ , which are the first reaction gases S1, are kept in a stable state, they are used as purge gases. When used as an excitation to the plasma.

In other words, the present invention focuses on the stable state of the gaseous substances such as NH ₃ , O ₂ , H _{2 in} the temperature range of 500 ° C. or lower, and uses them as the first reaction gas and the purge gas, in particular, When used, these gaseous materials are excited into a plasma via a remote plasma generator to facilitate an easy reaction.

In addition, in FIG. 2, the gas transfer unit 160 according to the present invention further includes a plurality of bypass tubes 162 and 164 to allow each gaseous substance to flow into the chamber 120 with a uniform pressure. This is the first bypass pipe 162 branched from the first supply pipe 142a-1 between the other end of the second supply pipe 142a-2 and the inlet pipe 122 and connected to the pump P, and the second gas. This is the second bypass pipe 164 branched from the third supply pipe 142b-1 between the storage device 142b and the third intermittent valve V3 and connected to the pump P.

That is, one end of the first bypass pipe 162 and the second bypass pipe 164 and the first supply pipe 142a-1 between the other end of the second supply pipe 142a-2 and the inlet pipe 122, respectively; , Branched from the third supply pipe (142b-1) between the second gas storage device (142b) and the third intermittent valve (V3), each of which is connected to the pump (P), wherein the first bypass A fourth intermittent valve V4 is preferably mounted on the first supply pipe 142a-1 between one end of the pipe 162 and the inlet pipe 122, and the first bypass pipe 162 and the second bypass valve are installed. The pass pipe 164 is equipped with 5th and 6th intermittent valves V5 and V6, respectively.

Accordingly, the first intermittent valve V1, the second intermittent valve V2, the fourth intermittent valve V4, the fifth intermittent valve V5, the third intermittent valve V3, and the sixth intermittent valve V6 are respectively. Complementary to interlock, when the implementation of the atomic layer deposition method from the first step to the fourth step through the thin film deposition apparatus according to the present invention is summarized in Table 2 below. At this time, V1 to V8 indicate the first to eighth intermittent valves, respectively.

TABLE 2

V1 V2 V3 V4 V5 V6 First step On off off On off On 2nd step off On off On off On 3rd step off On On off On off 4th step off On off On off On

In the above table, it can be seen that the first step and the second step are implemented as the on / off operation of the first intermittent valve V1 and the second intermittent valve V2 alternately proceeds. In this case, only one of the first intermittent valve V1 or the second intermittent valve V2 needs to be turned on.

In this case, the remote plasma generator 144 mounted on the first supply pipe 142a-1 of FIG. 2 is continuously turned on throughout the thin film deposition process, and the remote plasma generator 144 is preferably The plasma excites the first reaction gas S1 passing through the microwave at 2.45 GHz into the plasma.

In addition, Figure 3 is a flow chart showing the thin film deposition method according to the present invention described above in order, described with reference to FIG. 2, the first wafer is seated in the chamber 120 and then closed to the discharge pipe 124 and its end When the reaction region is adjusted to an inherent pressure through the installed pump P, the plasma is excited from the first gas storage device 142a via the first supply pipe 142a-1 and the remote plasma generator 144. The first reaction gas S1 is supplied into the chamber 120 to be adsorbed onto the wafer surface (M1), and then the first gaseous state is passed from the first gas storage device 142a via the second supply pipe 142a-2. The reaction gas S1 is supplied to the purge gas. (M2)

Subsequently, a gaseous second reaction gas (S2) flowing from the second gas storage device (142b) via the third supply pipe (142b-1) enters the chamber and reacts with the first reaction gas layer adsorbed on the wafer surface to form a thin film. (M3), and then the first reaction gas S1 in a gaseous state via the second supply pipe 142a-2 is supplied from the first gas storage device 142a into the chamber as a purge gas. M4)

When the thin film deposition cycle (T1) is performed once such a first step to the fourth step (M1, M2, M3, M4) is sequentially performed, this thin film deposition cycle is repeated several times to form a thin film. do.

The present invention provides a thin film deposition method that can be applied when a specific gas material decomposed at a high temperature is used as the reaction gas, and a thin film deposition apparatus for the same, wherein gaseous materials such as HN ₃ , O ₂ , and H ₂ decomposed at high temperature When used as a reaction gas, these gaseous materials can be used as a purge gas and excited with plasma to be used as a reaction gas, which greatly contributes to productivity improvement.

In addition, the present invention provides a thin film deposition apparatus that can implement the thin film deposition method according to the present invention, which can significantly reduce the number of valves, which is a control means of gaseous substances, as compared with the general case, It can be simplified, which has the advantage of lower cost and more productivity. In particular, the present invention has the advantage of enabling a low temperature process, thereby enabling a more improved semiconductor manufacturing process.

1 is a view showing a schematic structure of a general thin film deposition apparatus

2 is a view showing a schematic structure of a thin film deposition apparatus according to the present invention;

Figure 3 is a flow chart showing a thin film deposition method according to the present invention in order

<Description of the symbols for the main parts of the drawings>

120: chamber 122: inlet pipe

124: discharge pipe 140: gas storage unit

142a: first gas storage device 142b: second gas storage device

142a-1: 1st supply pipe 142a-2: 2nd supply pipe

144: remote plasma generator 142b-1: third supply pipe

160: gas transfer unit 162: first bypass pipe

164 second bypass tube

V1, V2, V3, V4, V5, V6: First to Sixth Intermittent Valves

P: Pump

Claims (13)

In order to selectively use the first gas as a reaction gas and a purge gas, a first supply pipe via a remote plasma generator is directly connected between the first gas storage device and the chamber, and the first gas storage device and the chamber are directly connected. In the method of depositing a thin film on a wafer using a thin film deposition apparatus comprising a second supply pipe, A first step of introducing a first gas in a plasma state into the chamber through the first supply pipe and adsorbing it onto a surface of a wafer; A second step of introducing a gaseous first gas into the chamber through the second supply pipe to purge residual material; A third step of introducing a second gas into the chamber and reacting with the first gas adsorption layer adsorbed on a surface of a wafer to deposit a thin film; A fourth step of purging the residual material by introducing a gaseous first gas into the chamber through the second supply pipe Thin film deposition method comprising a The method according to claim 1, The thin film deposition method of repeating the first step to the fourth step sequentially a thin film deposition cycle, the thin film deposition cycle is repeated several times. The method according to claim 1, The first gas has a thermal decomposition temperature of 500 ℃ or more thin film deposition method The method according to claim 3, The first gas is selected from NH ₃ , O ₂ , H ₂ , the second gas is a thin film deposition method selected from Si ₂ H ₆ , SiH ₄ . The method according to claim 1, The thin film deposition method generated by the remote plasma generator is the first gas in the plasma state The method according to claim 5, The remote plasma generator is a thin film deposition method using a microwave (microwave) of 2.45GHz A chamber defining a closed reaction area in which a wafer is seated therein, and including an inlet pipe for introducing external gaseous material into the reaction zone and a discharge pipe for discharging gaseous material in the reaction zone to the outside. )Wow; A first gas storage device for storing a first gas; A first supply pipe having one end connected to the first gas storage device and the other end connected to the inlet pipe; A remote plasma generating apparatus mounted on the first supply pipe and configured to excite a gaseous substance flowing through the first supply pipe into plasma; A second supply pipe having one end connected to the first gas storage device and the other end connected to the inlet pipe; A second gas storage device for storing a second gas; A third supply pipe having one end connected to the second gas storage device and the other end connected to the inlet pipe; Control means for controlling a flow of fluid in the first to third supply pipes Thin film deposition apparatus comprising a The method according to claim 7, One end of the second supply pipe is branched from the first supply pipe between the first gas storage device and the remote plasma generator, and the other end is a thin film deposition apparatus connected to the first supply pipe between the remote plasma generator and the inlet pipe. The method according to claim 8, The control means, A first intermittent valve mounted on a first supply pipe between the remote plasma generator and the other end of the first supply pipe; A second intermittent valve mounted to the second supply pipe; Third intermittent valve mounted to the third supply pipe Thin film deposition apparatus comprising a The method according to claim 9, A pump attached to an end of the discharge pipe of the chamber; A first bypass pipe having one end branched from the first supply pipe between the other end of the second supply pipe and the inlet pipe, and the other end connected to the pump; A second bypass pipe having one end branched from a third supply pipe between the second gas storage device and the third intermittent valve and the other end connected to the pump; A fourth intermittent valve mounted on a first supply pipe between one end of the first bypass pipe and the inlet pipe; A fifth intermittent valve mounted to the first bypass pipe; Sixth intermittent valve mounted to the second bypass pipe Thin film deposition apparatus further comprising The method according to claim 7, The remote plasma generator is a thin film deposition apparatus using a microwave of 2.45GHz The method according to claim 7, The first gas is a thin film deposition apparatus having a pyrolysis temperature of 500 ° C. or more. The method according to claim 12, The first gas is selected one of NH ₃ , O ₂ , H ₂ , the second gas is a thin film deposition apparatus is selected from Si ₂ H _6, SiH ₄