KR20010066812A - Manufacturing method of ink jet printer head - Google Patents
Manufacturing method of ink jet printer head Download PDFInfo
- Publication number
- KR20010066812A KR20010066812A KR1020000030248A KR20000030248A KR20010066812A KR 20010066812 A KR20010066812 A KR 20010066812A KR 1020000030248 A KR1020000030248 A KR 1020000030248A KR 20000030248 A KR20000030248 A KR 20000030248A KR 20010066812 A KR20010066812 A KR 20010066812A
- Authority
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- South Korea
- Prior art keywords
- nickel
- metal
- plate
- photoresist
- ceramic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 170
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000007747 plating Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 77
- 229910052751 metal Inorganic materials 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 66
- 239000000919 ceramic Substances 0.000 claims description 64
- 239000002131 composite material Substances 0.000 claims description 62
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 31
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 30
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 28
- 238000000059 patterning Methods 0.000 claims description 26
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910020515 Co—W Inorganic materials 0.000 claims description 15
- 229910003310 Ni-Al Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 15
- YCOASTWZYJGKEK-UHFFFAOYSA-N [Co].[Ni].[W] Chemical compound [Co].[Ni].[W] YCOASTWZYJGKEK-UHFFFAOYSA-N 0.000 claims description 15
- LFYMLMKKOJHYFY-UHFFFAOYSA-N [O-2].[Al+3].[Ni+2] Chemical group [O-2].[Al+3].[Ni+2] LFYMLMKKOJHYFY-UHFFFAOYSA-N 0.000 claims description 15
- RDOUUDPRYOXGBF-UHFFFAOYSA-N [O-2].[O-2].[Ti+4].[Ni+2] Chemical compound [O-2].[O-2].[Ti+4].[Ni+2] RDOUUDPRYOXGBF-UHFFFAOYSA-N 0.000 claims description 15
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- VXPFEVUAMVPPQU-UHFFFAOYSA-N dioxosilane nickel Chemical compound [Ni].O=[Si]=O VXPFEVUAMVPPQU-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 15
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 238000010899 nucleation Methods 0.000 claims description 7
- 229910002650 Ni-SiC Inorganic materials 0.000 claims 14
- 238000003763 carbonization Methods 0.000 claims 14
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 abstract 5
- 238000000206 photolithography Methods 0.000 abstract 5
- 238000005304 joining Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- -1 stainless steel Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04581—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14032—Structure of the pressure chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1643—Manufacturing processes thin film formation thin film formation by plating
Abstract
Description
본 발명은 프린터 헤드에 관한 것으로, 보다 상세하게는 잉크젯 프린터 헤드를 제조하는 방법에 관한 것이다.The present invention relates to a print head, and more particularly, to a method of manufacturing an ink jet printer head.
잉크젯 프린터 헤드는 도 1에 나타낸 바와 같이, 노즐(223)이 형성된 노즐 플레이트(222)와, 리저버(220)가 형성되는 리저버판(221)과, 유로(218)가 형성되는 유로판(219)과, 리스트릭터(216)가 형성되는 리스트릭터판(217)과, 챔버(214)를 형성하는 챔버판(215)과, 상부전극(210)과 압전체(211)와 하부전극(212)으로 구성된 액츄에이터가 차례로 적층되어 형성되는 것이 일반적이다.As shown in FIG. 1, the inkjet printer head includes a nozzle plate 222 on which a nozzle 223 is formed, a reservoir plate 221 on which a reservoir 220 is formed, and a flow path plate 219 on which a flow path 218 is formed. And a restrictor plate 217 on which the restrictor 216 is formed, a chamber plate 215 forming the chamber 214, an upper electrode 210, a piezoelectric body 211, and a lower electrode 212. It is common for actuators to be formed by stacking one after another.
상기의 구성에 의하여 잉크젯 프린터 헤드에는 서로 다른 크기와 형상의 노즐(223), 리저버(220), 유로(218), 리스트릭터(216) 및 챔버(214)와 같은 잉크의 이동로가 형성된다.The ink jet printer head is formed in the inkjet printer head by the above configuration, such as nozzles 223, reservoirs 220, flow passages 218, restrictors 216, and chambers 214 having different sizes and shapes.
잉크통(도시되지 않음)에서 공급된 잉크는 리저버(220)에 저장되어 있다가 유로(218)를 통하여 챔버(214) 내로 유입된다. 이때 유로(218)와 챔버(214) 사이에 형성된 리스트릭터(216)는 잉크가 챔버(214) 내로 유입되는 속도를 일정하게 유지시켜 준다.Ink supplied from an ink container (not shown) is stored in the reservoir 220 and flows into the chamber 214 through the flow path 218. At this time, the restrictor 216 formed between the flow path 218 and the chamber 214 maintains a constant rate at which ink flows into the chamber 214.
챔버(214)의 상부에 형성된 액츄에이터의 상부전극(210)과 하부전극(212)에 전압이 인가되면 압전체(211)가 액츄에이팅을 하게 되고, 이러한 압전체(211)의 액츄에이팅에 의하여 챔버(214)의 부피가 순간적으로 감소하면서 챔버(214)내의 잉크는 노즐 플레이트(222)에 형성된 노즐(223)을 통해 피기록재에 분사된다. 잉크의 분사에 의하여 인쇄가 행해진다.When a voltage is applied to the upper electrode 210 and the lower electrode 212 of the actuator formed on the chamber 214, the piezoelectric element 211 is actuated, the chamber by the actuation of the piezoelectric element 211 As the volume of 214 decreases momentarily, ink in the chamber 214 is injected onto the recording material through the nozzle 223 formed in the nozzle plate 222. Printing is performed by spraying ink.
상기와 같은 잉크젯 프린터 헤드를 제조하기 위하여 종래에는 노즐이 형성된 노즐 플레이트, 리저버가 형성된 리저버판, 유로가 형성된 유로판, 리스트릭터가 형성된 리스트릭터판 및 챔버가 형성된 챔버판을 각각 별도로 형성한 후 조립하는 방법을 사용하여 왔다.In order to manufacture the ink jet printer head as described above, a nozzle plate having a nozzle, a reservoir plate having a reservoir, a flow path plate having a flow path, a restrictor plate having a restrictor, and a chamber plate having a chamber are separately formed and then assembled. Has been used.
이 방법에서는 잉크젯 프린터 헤드를 구성하는 각 판들을 별도의 공정에 의하여 형성하고, 별도로 형성된 각 판에 포토레지스트를 도포하여 노광한 후 마이크로펀칭(micro-punching) 또는 리소그라피(lithography)공정을 이용한 마이크로 패터닝에 의하여 조립을 위한 가이드 홀을 형성하고 차례로 포갠다. 가이드 홀을 나사 등으로 조여서 판들을 고정시킨 후 열처리를 하여 각 판들이 접합되도록 하여 잉크젯 프린터 헤드를 완성한다.In this method, each plate constituting the inkjet printer head is formed by a separate process, and a photoresist is applied to each separately formed plate and exposed, followed by micropatterning using a micro-punching or lithography process. To form guide holes for assembly and pile one by one. The guide holes are tightened with screws or the like to fix the plates, and then heat treated to bond the plates, thereby completing the inkjet printer head.
이러한 종래의 방법은 각 판들을 조립할 때 크기 및 가이드 홀의 위치가 정확하게 일치하지 않아 조립공차가 발생할 가능성이 커서 수율이 낮아지는 문제점이 있다. 또한 각 판을 접합시키기 전에 도포하는 포토레지스트로는 접착성이 우수하고 잉크와의 반응성이 낮은 포토레지스트를 사용하여야 하므로 제조비용이 상승하는 단점이 있다.This conventional method has a problem in that the yield is low because the assembly tolerance is likely to occur because the size and the position of the guide hole do not exactly match when assembling each plate. In addition, the photoresist applied before bonding each plate has a disadvantage in that manufacturing cost increases because a photoresist having excellent adhesion and low reactivity with ink should be used.
상기의 문제점을 해결하기 위한 본 발명은 전기화학적 공정을 이용하여 각부품을 일괄적으로 형성하여 잉크젯 프린터 헤드를 제조하는 방법을 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION An object of the present invention for solving the above problems is to provide a method of manufacturing an inkjet printer head by collectively forming each part using an electrochemical process.
도 1은 일반적인 잉크젯 프린터 헤드를 나타낸 단면도,1 is a cross-sectional view showing a typical inkjet printer head,
도 2 내지 도 26은 본 발명의 일실시예를 나타낸 공정도,2 to 26 is a process chart showing an embodiment of the present invention,
도 27 내지 도 50은 본 발명의 다른 실시예를 나타낸 공정도.27 to 50 are process diagrams showing another embodiment of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10, 60 : 기판 12, 62 : 제1포토레지스트10, 60: substrate 12, 62: first photoresist
13, 63 : 크레이터 14, 64 : 크레이터층13, 63: crater 14, 64: crater layer
16, 66 : 제2포토레지스트 17, 67 : 노즐16, 66: second photoresist 17, 67: nozzle
18, 68 : 노즐 플레이트 20, 70 : 제3포토레지스트18, 68: nozzle plate 20, 70: third photoresist
21, 71 : 유로 22, 72 : 유로판21, 71: Euro 22, 72: Euro plate
24, 74 : 제4포토레지스트 25, 75 : 리저버24, 74: fourth photoresist 25, 75: reservoir
26, 76 : 리저버판 28, 78 : 제5포토레지스트26, 76: reservoir plate 28, 78: fifth photoresist
29, 79 : 리스트릭터 30, 80 : 리스트릭터판29, 79: List of characters 30, 80: List of characters
32, 82 : 제6포토레지스트 33, 83 : 챔버32, 82: sixth photoresist 33, 83: chamber
34, 84 : 챔버판 36, 86 : 진동판34, 84: chamber plate 36, 86: diaphragm
38 : 하부전극 40, 90 : 압전/전왜막38: lower electrode 40, 90: piezoelectric / electric distortion film
42, 92 : 상부전극42, 92: upper electrode
상기의 목적을 달성하기 위한 본 발명은 기판을 제공하는 단계와; 기판의 하부에 포토레지스트를 크레이터층의 두께만큼 도포하여 제1포토레지스트층을 형성하는 단계와; 상기 제1포토레지스트층을 패터닝, 노광 및 에칭하여 크레이터부분에만 포토레지스트를 남기는 단계와; 상기 기판의 하부에서 도금을 하여 크레이터층을 형성하는 단계와; 상기 크레이터층의 하부에 포토레지스트를 노즐 플레이트의 두께만큼 도포하여 제2포토레지스트층을 형성하는 단계와; 상기 제2포토레지스트층을 패터닝, 노광 및 에칭하여 노즐부분에만 포토레지스트를 남기는 단계와; 상기 크레이터층의 하부에서 도금을 하여 노즐 플레이트를 형성하는 단계와; 상기 노즐 플레이트의 하부에 포토레지스트를 유로판의 두께만큼 도포하여 제3포토레지스트층을 형성하는 단계와; 상기 제3포토레지스트층을 패터닝, 노광 및 에칭하여 유로부분에만 포토레지스트를 남기는 단계와; 상기 노즐 플레이트의 하부에서 도금을 하여 유로판을 형성하는 단계와; 상기 유로판의 하부에 포토레지스트를 리저버판의 두께만큼 도포하여 제4포토레지스트층을 형성하는 단계와; 상기 제4포토레지스트층을 패터닝, 노광 및 에칭하여 리저버부분에만 포토레지스트를 남기는 단계와; 상기 유로판의 하부에서 도금을 하여 리저버판을 형성하는 단계와; 상기 리저버판의 하부에 포토레지스트를 리스트릭터판의 두께만큼 도포하여 제5포토레지스트층을 형성하는 단계와; 상기 제5포토레지스트층을 패터닝, 노광 및 에칭하여 리스트릭터부분에만포토레지스트를 남기는 단계와; 상기 리저버판의 하부에서 도금을 하여 리스트릭터판을 형성하는 단계와; 상기 리스트릭터판 하부에 포토레지스트를 챔버판의 두께만큼 도포하여 제6포토레지스트층을 형성하는 단계와; 상기 제6포토레지스트층을 패터닝, 노광 및 에칭하여 챔버부분에만 포토레지스트를 남기는 단계와; 상기 리스트릭터판의 하부에서 도금을 하여 챔버판을 형성하는 단계와; 상기 챔버판의 하부에서 도금을 하여 진동판을 형성하는 단계와; 상기 기판을 제거하는 단계와; 상기 남아있는 포토레지스트를 모두 제거하는 단계와; 상기 진동판의 상부에 전원이 인가됨에 따라 액츄에이팅을 하는 압전/전왜막을 형성하는 단계와; 상기 압전/전왜막의 상부에 상부전극을 형성하는 단계를 포함하는 잉크젯 프린터 헤드의 제조방법에 관한 것이다.The present invention for achieving the above object comprises the steps of providing a substrate; Forming a first photoresist layer by applying a photoresist on the lower portion of the substrate by the thickness of the crater layer; Patterning, exposing and etching the first photoresist layer to leave photoresist only in the crater portion; Plating the lower portion of the substrate to form a crater layer; Forming a second photoresist layer by applying a photoresist under the crater layer to a thickness of a nozzle plate; Patterning, exposing and etching the second photoresist layer to leave photoresist only in the nozzle portion; Plating under the crater layer to form a nozzle plate; Forming a third photoresist layer by applying a photoresist to the lower portion of the nozzle plate by the thickness of the flow path plate; Patterning, exposing and etching the third photoresist layer to leave photoresist only in the flow path portion; Plating the lower portion of the nozzle plate to form a flow path plate; Forming a fourth photoresist layer by applying a photoresist on the lower portion of the flow path plate to the thickness of the reservoir plate; Patterning, exposing and etching the fourth photoresist layer to leave photoresist only in the reservoir portion; Plating the lower portion of the flow path plate to form a reservoir plate; Forming a fifth photoresist layer by applying a photoresist under the reservoir plate to a thickness of the restrictor plate; Patterning, exposing and etching the fifth photoresist layer to leave photoresist only in the restrictive portion; Plating the lower portion of the reservoir plate to form a restrictor plate; Forming a sixth photoresist layer by applying a photoresist to the lower portion of the restrictor plate to a thickness of a chamber plate; Patterning, exposing and etching the sixth photoresist layer to leave photoresist only in the chamber portion; Plating the lower portion of the restrictor plate to form a chamber plate; Plating the lower portion of the chamber plate to form a diaphragm; Removing the substrate; Removing all of the remaining photoresist; Forming a piezoelectric / electric distortion film that is actuated as power is applied to an upper portion of the diaphragm; It relates to a method of manufacturing an inkjet printer head comprising forming an upper electrode on the piezoelectric / electric distortion film.
또한 본 발명은 압전/전왜물질로 이루어진 기판을 제공하는 단계와; 상기 기판의 하부에서 도금을 하여 진동판을 형성하는 단계와; 상기 진동판의 하부에 포토레지스트를 챔버판의 두께만큼 도포하여 제6포토레지스트층을 형성하는 단계와; 상기 제6포토레지스트층을 패터닝, 노광 및 에칭하여 챔버부분에만 포토레지스트를 남기는 단계와; 상기 진동판의 하부에서 도금을 하여 챔버판을 형성하는 단계와; 상기 챔버판의 하부에 포토레지스트를 리스트릭터판의 두께만큼 도포하여 제5포토레지스트층을 형성하는 단계와; 상기 제5포토레지스트층을 패터닝, 노광 및 에칭하여 리스트릭터부분에만 포토레지스트를 남기는 단계와; 상기 챔버판의 하부에서 도금을 하여 리스트릭터판을 형성하는 단계와; 상기 리스트릭터판의 하부에 포토레지스트를 리저버판의 두께만큼 도포하여 제4포토레지스트층을 형성하는 단계와; 상기제4포토레지스트층을 패터닝, 노광 및 에칭하여 리저버부분에만 포토레지스트를 남기는 단계와; 상기 리스트릭터판의 하부에서 도금을 하여 리저버판을 형성하는 단계와; 상기 리저버판의 하부에 포토레지스트를 유로판의 두께만큼 도포하여 제3포토레지스트층을 형성하는 단계와; 상기 제3포토레지스트층을 패터닝, 노광 및 에칭하여 유로부분에만 포토레지스트를 남기는 단계와; 상기 리저버판의 하부에서 도금을 하여 유로판을 형성하는 단계와; 상기 유로판의 하부에 포토레지스트를 노즐 플레이트의 두께만큼 도포하여 제2포토레지스트층을 형성하는 단계와; 상기 제2포토레지스트층을 패터닝, 노광 및 에칭하여 노즐부분에만 포토레지스트를 남기는 단계와; 상기 유로판 하부에서 도금을 하여 노즐 플레이트를 형성하는 단계와; 상기 노즐 플레이트의 하부에 포토레지스트를 크레이터층의 두께만큼 도포하여 제1포토레지스트층을 형성하는 단계와; 상기 제1포토레지스트층을 패터닝, 노광 및 에칭하여 크레이터부분에만 포토레지스트를 남기는 단계와; 상기 노즐 플레이트의 하부에서 도금을 하여 크레이터층을 형성하는 단계와; 상기 남아있는 포토레지스트를 모두 제거하는 단계와; 상기 기판을 래핑 및 에칭하여 압전/전왜막을 형성하는 단계와; 상기 압전/전왜막의 상부에 상부전극을 형성하는 단계를 포함하는 잉크젯 프린터 헤드의 제조방법에 관한 것이다.In another aspect, the present invention provides a method comprising the steps of providing a substrate made of piezoelectric / electrostrictive material; Plating the lower portion of the substrate to form a diaphragm; Forming a sixth photoresist layer by applying a photoresist on a lower portion of the diaphragm to a thickness of a chamber plate; Patterning, exposing and etching the sixth photoresist layer to leave photoresist only in the chamber portion; Plating the lower portion of the diaphragm to form a chamber plate; Forming a fifth photoresist layer by applying a photoresist under the chamber plate to a thickness of a restrictor plate; Patterning, exposing and etching the fifth photoresist layer to leave photoresist only in the restrictive portion; Plating the lower portion of the chamber plate to form a restrictor plate; Forming a fourth photoresist layer by applying a photoresist on the lower part of the restrictor plate to a thickness of a reservoir plate; Patterning, exposing and etching the fourth photoresist layer to leave photoresist only in the reservoir portion; Forming a reservoir plate by plating the lower part of the restrictor plate; Forming a third photoresist layer by applying a photoresist under the reservoir plate to a thickness of the flow path plate; Patterning, exposing and etching the third photoresist layer to leave photoresist only in the flow path portion; Plating the lower portion of the reservoir plate to form a flow path plate; Forming a second photoresist layer by applying a photoresist to the lower portion of the flow path plate by the thickness of the nozzle plate; Patterning, exposing and etching the second photoresist layer to leave photoresist only in the nozzle portion; Plating the lower portion of the flow path plate to form a nozzle plate; Forming a first photoresist layer by applying a photoresist on the lower portion of the nozzle plate by the thickness of the crater layer; Patterning, exposing and etching the first photoresist layer to leave photoresist only in the crater portion; Plating the lower portion of the nozzle plate to form a crater layer; Removing all of the remaining photoresist; Wrapping and etching the substrate to form a piezoelectric / distortion film; It relates to a method of manufacturing an inkjet printer head comprising forming an upper electrode on the piezoelectric / electric distortion film.
베이스가 되는 기판의 재료로는 실리콘(Si)웨이퍼, 스테인레스 스틸(Stainless steel) 등의 금속류, 고분자화합물, 또는 산화알루미늄(Al2O3), 이산화규소(SiO2), PZT 등의 세라믹계 물질을 사용할 수 있다.As a base material of the substrate, silicon (Si) wafer, metals such as stainless steel, high molecular compound or ceramic-based material such as aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), PZT Can be used.
상기 기판의 하부에 제1포토레지스트를 크레이터층의 두께만큼 도포한 후 노광하고 에칭하여 크레이터가 형성될 부위를 제1포토레지스트로 차폐한다.The first photoresist is applied to the lower portion of the substrate by the thickness of the crater layer, and then exposed and etched to shield the portion where the crater is to be formed with the first photoresist.
실리콘웨이퍼, 고분자물질 또는 세라믹의 비전도성물질을 기판으로 사용하는 경우에는 기판의 하부에 시딩층을 형성하여야 한다. 금속류를 기판으로 사용하는 경우에는 반드시 시딩층을 형성할 필요는 없으나 도금이 안정하게 일어나도록 하기 위해서 별도의 시딩층을 형성할 수도 있다. 시딩층으로는 금(Au), 니켈(Ni) 등의 전도성 금속을 스퍼터링하거나 이베포레이션하여 박막을 형성한다.In the case of using a silicon wafer, a polymer material or a ceramic non-conductive material as a substrate, a seeding layer should be formed under the substrate. When metals are used as the substrate, it is not necessary to form the seeding layer, but a separate seeding layer may be formed in order to cause the plating to occur stably. As the seeding layer, a thin film is formed by sputtering or evaporating a conductive metal such as gold (Au) or nickel (Ni).
제1포토레지스트로 차폐한 후 금속기판 또는 시딩층이 형성된 기판의 하부에 크레이터층을 형성한다.After shielding with the first photoresist, a crater layer is formed under the metal substrate or the substrate on which the seeding layer is formed.
형성된 크레이터층의 하부에 제2포토레지스트를 노즐 플레이트의 두께만큼 도포한 후 노광하고 에칭하여 노즐이 형성될 부위를 제2포토레지스트로 차폐한다. 제2포토레지스트로 차폐한 후 크레이터층의 하부에 노즐 플레이트를 형성한다. 형성된 노즐 플레이트의 하부에 제3포토레지스트를 유로판의 두께만큼 도포한 후 노광하고 에칭하여 유로가 형성될 부위를 제3포토레지스트로 차폐한다. 제3포토레지스트로 차폐한 노즐 플레이트의 하부에 유로판을 형성한다.The second photoresist is applied to the lower portion of the formed crater layer by the thickness of the nozzle plate, and then exposed and etched to shield the site where the nozzle is to be formed with the second photoresist. After shielding with the second photoresist, a nozzle plate is formed under the crater layer. The third photoresist is applied to the lower portion of the formed nozzle plate by the thickness of the flow path plate, and then exposed and etched to shield the portion where the flow path is to be formed with the third photoresist. A flow path plate is formed under the nozzle plate shielded with the third photoresist.
형성된 유로판의 하부에 제4포토레지스트를 리저버판의 두께만큼 도포한 후 노광하고 에칭하여 리저버가 형성될 부위를 제4포토레지스트로 차폐한다. 제4포토레지스트로 차폐된 유로판의 하부에 리저버를 형성한다.The fourth photoresist is applied to the lower portion of the formed flow path plate by the thickness of the reservoir plate, and then exposed and etched to shield the portion where the reservoir is to be formed with the fourth photoresist. The reservoir is formed under the flow path plate shielded with the fourth photoresist.
형성된 리저버판의 하부에 제5포토레지스트를 리스트릭터판의 두께만큼 도포한 후 노광하고 에칭하여 리스트릭터가 형성될 부위를 제5포토레지스트로 차폐한다. 제5포토레지스트로 차폐된 리저버판의 하부에 리스트릭터판을 형성한다.The fifth photoresist is applied to the lower portion of the formed reservoir plate by the thickness of the restrictor plate, and then exposed and etched to shield the portion where the restrictor is to be formed with the fifth photoresist. A restrictor plate is formed under the reservoir plate shielded with the fifth photoresist.
형성된 리스트릭터판의 하부에 제6포토레지스트를 챔버판의 두께만큼 도포한 후 노광하고 에칭하여 챔버가 형성될 부위를 제6포토레지스트로 차폐한다. 제6포토레지스트로 차폐된 리스트릭터판의 하부에 챔버판을 형성한다.The sixth photoresist is applied to the lower portion of the formed restrictor plate by the thickness of the chamber plate, and then exposed and etched to shield the portion where the chamber is to be formed with the sixth photoresist. A chamber plate is formed below the restrictor plate shielded with the sixth photoresist.
형성된 챔버판의 하부에 진동판을 형성한다.The vibration plate is formed in the lower portion of the formed chamber plate.
크레이터층, 노즐 플레이트, 유로판, 리저버판, 리스트릭터판, 챔버판 및 진동판의 재료로는 단일금속, 복합금속, 세라믹 및 금속-세라믹복합체 중 선택하여 사용한다. 단일금속으로는 니켈(Ni), 구리(Cu) 등을 사용하는 것이 바람직하고, 복합금속으로는 니켈-크롬(Ni-Cr), 니켈-코발트-텅스텐(Ni-Co-W) 등의 합금을 사용하는 것이 바람직하다. 세라믹으로는 이산화규소(SiO2), 질화규소(Si3N4), 산화알루미늄(Al2O3), 탄화규소(SiC) 등을 사용하는 것이 바람직하다. 금속-세라믹복합체로는 니켈-산화알루미늄(Ni-Al2O3), 니켈-이산화규소(Ni-SiO2), 니켈-이산화티탄(Ni-TiO2), 니켈-탄화실리콘(Ni-SiC), 니켈-탄화티타늄(Ni-TiC), 니켈-탄화텅스텐(Ni-WC) 등을 사용하는 것이 바람직하다.The material of the crater layer, the nozzle plate, the flow path plate, the reservoir plate, the restrictor plate, the chamber plate, and the diaphragm is selected from a single metal, a composite metal, a ceramic, and a metal-ceramic composite. It is preferable to use nickel (Ni), copper (Cu) or the like as a single metal, and alloys such as nickel-chromium (Ni-Cr) and nickel-cobalt-tungsten (Ni-Co-W) may be used as the composite metal. It is preferable to use. As the ceramic, it is preferable to use silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), silicon carbide (SiC), or the like. Metal-ceramic composites include nickel-aluminum oxide (Ni-Al 2 O 3 ), nickel-silicon dioxide (Ni-SiO 2 ), nickel-titanium dioxide (Ni-TiO 2 ), and nickel-silicon carbide (Ni-SiC) , Nickel-titanium carbide (Ni-TiC), nickel-tungsten carbide (Ni-WC), or the like is preferably used.
이때 사용되는 물질의 재질에 따라 완성된 잉크젯 프린터 헤드의 특성이 변화될 수 있으므로 잉크젯 프린터 헤드의 강성, 잉크젯 프린터 헤드의 재료와 잉크와의 반응성, 부재의 표면특성, 내부식성 등의 외부저항성 등을 고려하여 적절한 재료를 선택하여 사용한다.At this time, the characteristics of the finished inkjet print head may be changed according to the material of the material used. Therefore, the rigidity of the inkjet printer head, the reactivity of the inkjet printer head with the ink, the surface properties of the member, the external resistance such as corrosion resistance, etc. Consider and select the appropriate material.
특히 진동판의 경우에는 금속-세라믹복합체를 사용하는 것이 바람직하다. 이는 이러한 재료들이 강성이 높아서 주파수특성이 우수하고 잉크젯 프린터 헤드의 고집적화에 따른 크로스토크(crosstalk)를 방지할 수 있기 때문이다.In particular, in the case of a diaphragm, it is preferable to use a metal-ceramic composite. This is because these materials have high rigidity, which is excellent in frequency characteristics and can prevent crosstalk due to high integration of the inkjet print head.
또한 상기 재료들을 도금함으로써 크레이터층, 노즐 플레이트, 유로판, 리저버판, 리스트릭터판, 챔버판 및 진동판을 형성하며, 도금방법으로는 전해도금법 또는 무전해도금법을 사용한다.In addition, the above-mentioned materials are plated to form a crater layer, a nozzle plate, a flow path plate, a reservoir plate, a restrictor plate, a chamber plate, and a diaphragm plate. Electroplating or electroless plating is used as the plating method.
진동판을 형성하여 전체구조를 완성한 후 기판을 제거한다. 기판을 제거한 후 포토레지스트를 에칭에 의하여 제거한다. 전체구조에 포함된 포토레지스트를 제거하면 크레이터, 노즐, 유로, 리저버, 리스트릭터, 챔버가 형성된다.After forming the diaphragm to complete the whole structure, the substrate is removed. After removing the substrate, the photoresist is removed by etching. When the photoresist included in the entire structure is removed, a crater, a nozzle, a flow path, a reservoir, a restrictor, and a chamber are formed.
상기의 공정을 역순으로 진행하는 것도 가능하다. 역순으로 진행하는 경우 각 공정은 상기에서 설명한 바와 같으며, 기판에 진동판, 챔버판, 리스트릭터판, 리저버판, 유로판, 노즐 플레이트 및 크레이터층의 순서로 형성한 후 기판을 제거하고 에칭하여 포토레지스트를 제거한다.It is also possible to proceed with the above process in reverse order. In the reverse order, each process is as described above, and the substrate is formed in the order of the vibration plate, the chamber plate, the restrictor plate, the reservoir plate, the flow path plate, the nozzle plate, and the crater layer. Remove the resist.
상기의 방법들에 의하여 형성된 진동판의 상부에 액츄에이터인 압전/전왜막 및 상부전극을 형성하거나, 하부전극, 압전/전왜막 및 상부전극을 형성하여 잉크젯 프린터 헤드를 완성한다. 액츄에이터를 형성하는 방법으로는 일반적으로 사용되는 방법들을 사용할 수 있다.The piezoelectric / electrodistor film and the upper electrode, which are actuators, are formed on the diaphragm formed by the above methods, or the lower electrode, the piezoelectric / electric strain film, and the upper electrode are formed to complete the inkjet printer head. As a method of forming the actuator, methods generally used may be used.
상기 역순의 방법에서 기판으로 PZT 등의 압전/전왜물질을 사용하는 경우에는 전체구조가 완성된 후 기판을 래핑(lapping)하고 패터닝하여 에칭함으로써 압전/전왜막으로 사용할 수도 있다. 이 경우에는 상부전극만을 형성하면 잉크젯 프린터 헤드가 완성된다.When the piezoelectric / distortion material such as PZT is used as the substrate in the reverse method, the substrate may be used as a piezoelectric / distortion film by wrapping, patterning, and etching the substrate. In this case, the inkjet printer head is completed by forming only the upper electrode.
이하 도면을 참조하여 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 2 내지 도 26은 본 발명의 방법의 일실시예를 나타낸 도면이다.2 to 26 illustrate one embodiment of the method of the present invention.
기판(10)의 하부에 제1포토레지스트(12)를 크레이터층의 두께만큼 도포한 후 노광하고 에칭하여 크레이터가 형성될 부위를 제1포토레지스트(12)로 차폐한다. 제1포토레지스트(12)로 차폐한 후 기판의 하부에 크레이터층(14)을 형성한다.The first photoresist 12 is applied to the lower portion of the substrate 10 by the thickness of the crater layer, and then exposed and etched to shield the portion where the crater is to be formed by the first photoresist 12. After shielding with the first photoresist 12, the crater layer 14 is formed on the lower portion of the substrate.
형성된 크레이터층(14)의 하부에 제2포토레지스트(16)를 노즐 플레이트의 두께만큼 도포한 후 노광하고 에칭하여 노즐이 형성될 부위를 제2포토레지스트(16)로 차폐한다. 제2포토레지스트(16)로 차폐한 후 크레이터층(14)의 하부에 노즐 플레이트(18)를 형성한다.The second photoresist 16 is applied to the lower portion of the formed crater layer 14 by the thickness of the nozzle plate, and then exposed and etched to shield the site where the nozzle is to be formed by the second photoresist 16. After shielding with the second photoresist 16, the nozzle plate 18 is formed under the crater layer 14.
형성된 노즐 플레이트(18)의 하부에 제3포토레지스트(20)를 유로판의 두께만큼 도포한 후 노광하고 에칭하여 유로가 형성될 부위를 제3포토레지스트(20)로 차폐한다. 제3포토레지스트(20)로 차폐한 노즐 플레이트(18)의 하부에 유로판(22)을 형성한다.The third photoresist 20 is applied to the lower portion of the formed nozzle plate 18 by the thickness of the flow path plate, and then exposed and etched to shield the portion where the flow path is to be formed by the third photoresist 20. The flow path plate 22 is formed under the nozzle plate 18 shielded by the third photoresist 20.
형성된 유로판(22)의 하부에 제4포토레지스트(24)를 리저버판의 두께만큼 도포한 후 노광하고 에칭하여 리저버가 형성될 부위를 제4포토레지스트(24)로 차폐한다. 제4포토레지스트(24)로 차폐된 유로판(22)의 하부에 리저버판(26)을 형성한다.The fourth photoresist 24 is applied to the lower portion of the flow path plate 22 formed by the thickness of the reservoir plate, and then exposed and etched to shield the portion where the reservoir is to be formed by the fourth photoresist 24. The reservoir plate 26 is formed under the flow path plate 22 shielded by the fourth photoresist 24.
형성된 리저버판(26)의 하부에 제5포토레지스트(28)를 리스트릭터판의 두께만큼 도포한 후 노광하고 에칭하여 리스트릭터가 형성될 부위를 제5포토레지스트(28)로 차폐한다. 제5포토레지스트(28)로 차폐된 리저버판(26)의 하부에 리스트릭터판(30)을 형성한다.The fifth photoresist 28 is applied to the lower portion of the formed reservoir plate 26 by the thickness of the restrictor plate, and then exposed and etched to shield the portion where the restrictor is to be formed by the fifth photoresist 28. The restrictor plate 30 is formed under the reservoir plate 26 shielded by the fifth photoresist 28.
형성된 리스트릭터판(30)의 하부에 제6포토레지스트(32)를 챔버판의 두께만큼 도포한 후 노광하고 에칭하여 챔버가 형성될 부위를 제6포토레지스트(32)로 차폐한다. 제6포토레지스트(32)로 차폐된 리스트릭터판(30)의 하부에 챔버판(34)을 형성한다.The sixth photoresist 32 is applied to the lower portion of the formed restrictor plate 30 by the thickness of the chamber plate, and then exposed and etched to shield the portion where the chamber is to be formed by the sixth photoresist 32. The chamber plate 34 is formed below the restrictor plate 30 shielded by the sixth photoresist 32.
형성된 챔버판(34)의 하부에 진동판(36)을 형성하여 몸체구조를 완성한 후 기판(10)을 제거한다. 기판(10)을 제거한 후 포토레지스트(12)(16)(20)(24)(28)(32)를 에칭하여 제거한다. 전체구조에 포함된 포토레지스트를 제거하면 크레이터(13), 노즐(17), 유로(21), 리저버(25), 리스트릭터(29), 챔버(33)가 형성되어, 잉크젯 프린터 헤드의 몸체가 완성된다.The diaphragm 36 is formed below the formed chamber plate 34 to complete the body structure, and then remove the substrate 10. After removing the substrate 10, the photoresist 12, 16, 20, 24, 28 and 32 are etched and removed. When the photoresist included in the overall structure is removed, the crater 13, the nozzle 17, the flow path 21, the reservoir 25, the restrictor 29, and the chamber 33 are formed to form a body of the inkjet printer head. Is completed.
잉크젯 프린터 헤드의 몸체에서 진동판(36)의 상부에 하부전극(38), 압전/전왜막(40) 및 상부전극(42)을 형성하여 잉크젯 프린터 헤드를 완성한다.A lower electrode 38, a piezoelectric / electric strain film 40, and an upper electrode 42 are formed on the diaphragm 36 in the body of the ink jet printer head to complete the ink jet printer head.
도 27 내지 도 50은 본 발명의 방법의 다른 실시예를 나타낸 도면이다.27-50 illustrate another embodiment of the method of the present invention.
먼저 압전/전왜물질로 이루어진 기판(60)의 하부에서 도금을 하여 진동판(86)을 형성한다.First, the diaphragm 86 is formed by plating the lower portion of the substrate 60 made of piezoelectric / electric warp material.
형성된 진동판(60)의 하부에 제6포토레지스트(82)를 챔버판의 두께만큼 도포한 후 노광하고 에칭하여 챔버가 형성될 부위를 제6포토레지스트(82)로 차폐한다. 제6포토레지스트(82)로 차폐된 진동판(86)의 하부에 챔버판(84)을 형성한다.The sixth photoresist 82 is applied to the lower portion of the formed diaphragm 60 by the thickness of the chamber plate, and then exposed and etched to shield the portion where the chamber is to be formed by the sixth photoresist 82. The chamber plate 84 is formed under the diaphragm 86 shielded by the sixth photoresist 82.
형성된 챔버판(84)의 하부에 제5포토레지스트(78)를 리스트릭터판의 두께만큼 도포한 후 노광하고 에칭하여 리스트릭터가 형성될 부위를 제5포토레지스트(78)로 차폐한다. 제5포토레지스트(78)로 차폐된 챔버판(84)의 하부에리스트릭터판(80)을 형성한다.The fifth photoresist 78 is applied to the lower portion of the formed chamber plate 84 by the thickness of the restrictor plate, and then exposed and etched to shield the portion where the restrictor is to be formed by the fifth photoresist 78. The restrictor plate 80 is formed under the chamber plate 84 shielded by the fifth photoresist 78.
형성된 리스트릭터판(80)의 하부에 제4포토레지스트(74)를 리저버판의 두께만큼 도포한 후 노광하고 에칭하여 리저버가 형성될 부위를 제4포토레지스트(74)로 차폐한다. 제4포토레지스트(74)로 차폐된 리스트릭터판(80)의 하부에 리저버판(76)을 형성한다.The fourth photoresist 74 is applied to the lower portion of the formed restrictor plate 80 by the thickness of the reservoir plate, and then exposed and etched to shield the portion where the reservoir is to be formed by the fourth photoresist 74. The reservoir plate 76 is formed under the restrictor plate 80 shielded by the fourth photoresist 74.
형성된 리저버판(76)의 하부에 제3포토레지스트(72)를 유로판의 두께만큼 도포한 후 노광하고 에칭하여 유로가 형성될 부위를 제3포토레지스트(72)로 차폐한다. 제3포토레지스트(72)로 차폐된 리저버판(76)의 하부에 유로판(72)을 형성한다.The third photoresist 72 is applied to the lower portion of the formed reservoir plate 76 by the thickness of the flow path plate, and then exposed and etched to shield the portion where the flow path is to be formed by the third photoresist 72. The flow path plate 72 is formed under the reservoir plate 76 shielded by the third photoresist 72.
형성된 유로판(72)의 하부에 제2포토레지스트(66)를 노즐 플레이트의 두께만큼 도포한 후 노광하고 에칭하여 노즐이 형성될 부위를 제2포토레지스트(66)로 차폐한다. 제2포토레지스트(66)로 차폐된 유로판(72)의 하부에 노즐 플레이트(68)를 형성한다.The second photoresist 66 is applied to the lower portion of the formed flow path plate 72 by the thickness of the nozzle plate, and then exposed and etched to shield the site where the nozzle is to be formed by the second photoresist 66. The nozzle plate 68 is formed under the flow path plate 72 shielded by the second photoresist 66.
형성된 노즐 플레이트(68)의 하부에 제1포토레지스트(62)를 크레이터층의 두께만큼 도포한 후 노광하고 에칭하여 크레이터가 형성될 부위를 제1포토레지스트(62)로 차폐한다. 제1포토레지스트(62)로 차폐된 노즐 플레이트(68)의 하부에 크레이터층(64)을 형성한다.The first photoresist 62 is applied to the lower portion of the formed nozzle plate 68 by the thickness of the crater layer, and then exposed and etched to shield the portion where the crater is to be formed by the first photoresist 62. The crater layer 64 is formed under the nozzle plate 68 shielded by the first photoresist 62.
크레이터층(64)을 형성하여 몸체구조를 완성한 후 포토레지스트(62)(66)(70)(74)(78)(82)를 에칭하여 제거한다. 포토레지스트를 제거하면 크레이터(63), 노즐(67), 유로(71), 리저버(75), 리스트릭터(79), 챔버(83)가 형성되어, 잉크젯 프린터 헤드의 몸체가 완성된다.After the crater layer 64 is formed to complete the body structure, the photoresist 62, 66, 70, 74, 78, and 82 is etched and removed. When the photoresist is removed, the crater 63, the nozzle 67, the flow path 71, the reservoir 75, the restrictor 79, and the chamber 83 are formed to complete the body of the inkjet printer head.
몸체를 완성한 후 기판(60)을 일정한 두께로 래핑하고 에칭하여 압전/전왜막(90)을 형성한다. 형성된 압전/전왜막(90)의 상부에 상부전극(92)을 형성하여 잉크젯 프린터 헤드를 완성한다.After the body is completed, the substrate 60 is wrapped and etched to a predetermined thickness to form a piezoelectric / electrodistor film 90. An upper electrode 92 is formed on the formed piezoelectric / distortion film 90 to complete the inkjet printer head.
상기와 같은 본 발명의 방법은 전기화학적 배치(batch) 공정에 의하여 잉크젯 프린터 헤드를 일괄적으로 성형하므로 대면적의 대량생산이 용이하며, 종래에서와 같은 부품별 및 전체부품의 접합 및 조립공정이 불필요하므로 리드타임이 단축된다.The method of the present invention as described above is easy to mass production of a large area because the inkjet printer head is molded in a batch by an electrochemical batch process, and the bonding and assembly processes of parts and whole parts as in the prior art This eliminates lead times.
또한 각 부품의 수율이 향상되며 성형된 구조물의 정렬오차가 최소화되므로 고정밀 배열이 가능해지며, 각 부품의 구성성분을 적절히 선택함으로써 각 부위별로 요구되는 헤드부품의 친수성 및 발수성과 같은 내잉크특성 및 강성을 조절할 수 있다.In addition, the yield of each part is improved and the alignment error of the molded structure is minimized, so that high-precision arrangement is possible. Can be adjusted.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100731310B1 (en) * | 2003-02-07 | 2007-06-21 | 캐논 가부시끼가이샤 | Method for producing ink jet head |
KR101042658B1 (en) * | 2011-03-21 | 2011-06-20 | 한국지역난방기술 (주) | Pressure controlling device for preventing vaccum and overpressure of heat storage tank of district heating |
CN110816057A (en) * | 2018-08-09 | 2020-02-21 | 东芝泰格有限公司 | Ink jet head, ink jet device, and method of manufacturing ink jet head |
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JP5145636B2 (en) | 2005-12-27 | 2013-02-20 | 富士ゼロックス株式会社 | Droplet discharge head and droplet discharge apparatus |
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Cited By (4)
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KR100731310B1 (en) * | 2003-02-07 | 2007-06-21 | 캐논 가부시끼가이샤 | Method for producing ink jet head |
KR101042658B1 (en) * | 2011-03-21 | 2011-06-20 | 한국지역난방기술 (주) | Pressure controlling device for preventing vaccum and overpressure of heat storage tank of district heating |
CN110816057A (en) * | 2018-08-09 | 2020-02-21 | 东芝泰格有限公司 | Ink jet head, ink jet device, and method of manufacturing ink jet head |
CN110816057B (en) * | 2018-08-09 | 2021-10-26 | 东芝泰格有限公司 | Ink jet head, ink jet device, and method of manufacturing ink jet head |
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