KR20010063894A - Chiller for controlling temperature of electrode in semiconductor manufacture - Google Patents

Chiller for controlling temperature of electrode in semiconductor manufacture Download PDF

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Publication number
KR20010063894A
KR20010063894A KR1019990061998A KR19990061998A KR20010063894A KR 20010063894 A KR20010063894 A KR 20010063894A KR 1019990061998 A KR1019990061998 A KR 1019990061998A KR 19990061998 A KR19990061998 A KR 19990061998A KR 20010063894 A KR20010063894 A KR 20010063894A
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South Korea
Prior art keywords
cooling water
electrode
cooling
coolant
circulation pipe
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KR1019990061998A
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Korean (ko)
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황창일
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박종섭
주식회사 하이닉스반도체
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Priority to KR1019990061998A priority Critical patent/KR20010063894A/en
Publication of KR20010063894A publication Critical patent/KR20010063894A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A cooling apparatus for controlling a temperature of an electrode for manufacturing a semiconductor is provided to guarantee stability of plasma discharge generated by the electrode and to eliminate unstable elements caused by abnormal discharge of plasma in an ultra fine process, by completely insulating the electrode from the ground. CONSTITUTION: A coolant circulating pipe(9) cools an electrode(1) through coolant, coupled to a lower portion of the electrode installed in a chamber for manufacturing a semiconductor. A coolant storing receptacle(11) supplies coolant to the coolant circulating pipe while storing the coolant passing through the coolant circulating pipe. A circulating unit circulating power to circulate the coolant stored in the coolant storing receptacle through the coolant circulating pipe. The coolant circulating pipe is formed as an insulation material to insulate the electrode from the ground.

Description

반도체 제조용 전극의 온도 제어를 위한 냉각 장치{CHILLER FOR CONTROLLING TEMPERATURE OF ELECTRODE IN SEMICONDUCTOR MANUFACTURE}Cooling device for temperature control of electrode for semiconductor manufacturing {CHILLER FOR CONTROLLING TEMPERATURE OF ELECTRODE IN SEMICONDUCTOR MANUFACTURE}

본 발명은 반도체 제조용 전극의 온도 제어를 위한 냉각 장치에 관한 것으로서, 특히 챔버 내의 전극이 그라운드와 완전 절연되도록 상기 전극을 그라운드로 접지시킬 수 있는 가능성이 있는 구성요소들을 모두 절연시킨 구조의 반도체 제조용 전극의 온도 제어를 위한 냉각 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooling apparatus for temperature control of an electrode for semiconductor manufacturing, and more particularly to an electrode for semiconductor manufacturing having a structure insulating all of the components capable of grounding the electrode to ground so that the electrode in the chamber is completely insulated from ground It relates to a cooling device for temperature control of the.

도 1 내지 도 3을 참조하여 본 발명에 따른 반도체 제조용 전극의 온도 제어를 위한 냉각 장치에 대해 설명하면 다음과 같다.Referring to FIGS. 1 to 3, a cooling apparatus for temperature control of an electrode for semiconductor manufacturing according to the present invention will be described.

먼저, 반도체 제조를 위한 챔버의 쉴드(Shield)(5) 내에 설치된 전극(1)의 하부에는 냉각수를 통해 상기 전극(1)을 냉각시키는 구리 재질의 냉각수 순환관(9)의 일측이 결합된다.First, one side of a copper coolant circulation pipe 9 for cooling the electrode 1 through a coolant is coupled to a lower portion of the electrode 1 installed in a shield 5 of a chamber for manufacturing a semiconductor.

더 상세하게는, 상기 전극(1)의 하부에는 냉각수가 통과할 수 있는 냉각수유로(1a)가 형성되고, 상기 냉각수 순환관(9)은 그 일측이 상기 냉각수유로(1a)의 입구와 출구에 각각 커넥터(7)에 의해 연통되도록 결합된다.More specifically, a cooling water flow path 1a through which cooling water passes is formed in the lower portion of the electrode 1, and one side of the cooling water circulation pipe 9 is at the inlet and the outlet of the cooling water flow path 1a. Each is coupled so as to be in communication by the connector 7.

또한, 상기 냉각수 순환관(9)의 타측에는 냉각수 순환관(9)으로 냉각수를 공급하는 동시에 상기 냉각수 순환관(9)을 통과한 후의 냉각수를 저장하는 냉각수 저장통(11)이 설치되고, 상기 냉각수 저장통(11)에는 냉각수 저장통(11)에 저장된 냉각수가 일정 온도 이하로 유지되도록 상기한 냉각수를 냉각시키는 열교환수단을 설치된다.In addition, the other side of the cooling water circulation pipe (9) is provided with a cooling water reservoir (11) for supplying the cooling water to the cooling water circulation pipe (9) and storing the cooling water after passing through the cooling water circulation pipe (9), the cooling water The reservoir 11 is provided with heat exchange means for cooling the above-mentioned coolant so that the coolant stored in the coolant reservoir 11 is kept below a predetermined temperature.

여기서, 상기 열교환수단은 냉각수 저장통(11)의 내부에 설치되어 상기 냉각수 저장통(11)으로 회수된 냉각수를 냉각가스와 열교환시켜 냉각시키는 알루미늄 재질의 열교환기(13)와, 상기 열교환기(13)를 통해 냉각수와 냉각가스의 열교환이 이루어지도록 열교환기(13)에 냉각가스를 순환시키는 구리 재질의 냉각가스 순환관(15)으로 구성된다.Here, the heat exchange means is installed in the cooling water reservoir 11, the heat exchanger 13 of aluminum and cooling the cooling water recovered by the cooling water reservoir 11 by cooling gas and the heat exchanger 13, It consists of a cooling gas circulation pipe 15 of copper material for circulating the cooling gas to the heat exchanger 13 so that the heat exchange between the cooling water and the cooling gas through.

또한, 상기 냉각수 순환관(9)에는 냉각수 저장통(11)의 냉각수가 상기 냉각수 순환관(9)을 통해 순환되도록 순환력을 제공하는 구리 재질의 순환펌프(17)와, 상기 냉각수 순환관(9)을 통과하는 냉각수의 온도를 감지하여 전극(1)의 온도를 제어하기 위한 써머커플센서(Thermocouple Sensor)(19)가 설치된다.In addition, the cooling water circulation pipe 9 has a copper circulation pump 17 for providing a circulation force so that the cooling water of the cooling water storage tank 11 is circulated through the cooling water circulation pipe 9, and the cooling water circulation pipe 9 Thermocouple sensor 19 for controlling the temperature of the electrode 1 by sensing the temperature of the cooling water passing through the) is installed.

상기에서, 미설명된 참조번호 3은 플라즈마 방전을 위해 전극(1)에 전원을 인가하는 동력공급원을 나타낸다.In the above, reference numeral 3, which is not described, denotes a power supply source for applying power to the electrode 1 for plasma discharge.

상기와 같이 구성된 냉각 장치에서는, 냉각수 저장통(11)에 저장된 냉각수가 순환펌프(17)의 작동에 의하여 냉각수 순환관(9)을 통해 순환하게 되고, 이렇게 순환되는 냉각수는 전극(1)의 하부에 형성된 냉각수유로(1a)를 통과하면서 상기 전극(1)을 냉각시킨다.In the cooling device configured as described above, the coolant stored in the coolant reservoir 11 is circulated through the coolant circulation pipe 9 by the operation of the circulation pump 17, and the coolant circulated in this way is disposed at the lower portion of the electrode 1. The electrode 1 is cooled while passing through the formed cooling water passage 1a.

상기와 같이 전극(1)의 냉각수유로(1a)를 통과하면서 상기 전극(1)을 냉각시킨 냉각수는 냉각수 순환관(9)을 통해 다시 냉각수 저장통(11)으로 회수된다. 이렇게 상기 냉각수 저장통(11)으로 회수된 냉각수는 열교환기(13)에 의해 일정 온도 이하로 냉각된 후 상기의 과정을 계속해서 되풀이한다.As described above, the cooling water that has cooled the electrode 1 while passing through the cooling water channel 1a of the electrode 1 is recovered to the cooling water reservoir 11 through the cooling water circulation pipe 9. The coolant recovered in the coolant reservoir 11 is cooled to a predetermined temperature or lower by the heat exchanger 13, and then the above process is repeated.

이때, 상기 열교환기(13)에는 냉각수 저장통(11)의 냉각수와 열교환되기 위한냉각가스가 냉각가스 순환관(15)에 의해 순환되고 있다.At this time, the heat exchanger 13 is circulated by the cooling gas circulation pipe 15 for the cooling gas for heat exchange with the cooling water of the cooling water storage tank (11).

상기와 같은 냉각수를 이용한 전극(1)의 냉각 과정에서, 상기 전극(1)의 온도는 써머커플센서(19)에 의해 감지된 냉각수의 온도에 따라 상기 전극(1) 하부를 통과하는 냉각수의 양을 조절함으로써 제어된다.In the cooling process of the electrode 1 using the cooling water as described above, the temperature of the electrode 1 is the amount of cooling water passing through the lower portion of the electrode 1 according to the temperature of the cooling water detected by the thermocouple sensor 19. It is controlled by adjusting.

이와 같은 반도체 제조용 전극의 온도 제어를 위한 냉각 장치는 도 2에 도시된 바와 같이, 그라운드에 전극(1)이 접지되지 않고 완전 절연된 상태가 가장 이상적이다.As shown in FIG. 2, the cooling device for temperature control of the electrode for semiconductor manufacturing is ideally in a state in which the electrode 1 is not grounded and completely insulated.

그러나, 상기한 종래의 반도체 제조용 전극의 온도 제어를 위한 냉각 장치는 도 3에 도시된 바와 같이, 각각의 구성요소들이 모두 전기적으로 그라운드에 접지된 상태이기 때문에 냉각수의 순환시 상기 전극(1)이 일정 수치의 저항으로 항상 그라운드에 연결되어 동작할 수밖에 없게 된다.However, in the conventional cooling apparatus for temperature control of the electrode for semiconductor manufacturing, as shown in FIG. 3, since each component is electrically grounded to the ground, the electrode 1 is circulated during circulation of the cooling water. With a certain amount of resistance, you will always be connected to ground to operate.

따라서, 종래의 전극의 온도 제어를 위한 냉각 장치는 사용시간이 경과함에 따라 냉각수의 오염이 누적되어 상기한 냉각수의 저항이 감소하게 되고, 이로 인해 전극(1)에 의한 반도체의 제조 공정시 플라즈마 이상방전이 발생되어 공정상의 불안 요소로 작용되는 문제점이 있었다.Therefore, in the conventional cooling apparatus for controlling the temperature of the electrode, as the use time elapses, contamination of the cooling water accumulates, and thus the resistance of the cooling water decreases, which causes plasma abnormality in the manufacturing process of the semiconductor by the electrode 1. There was a problem in that discharge was generated to act as an anxiety factor in the process.

또한, 종래 기술은 전극(1)과 그라운드 사이의 저항 크기를 최대한 크게 하기 위하여 최초에 저항이 큰 냉각수를 사용하더라도 사용중 저항이 감소되므로 계속적으로 냉각수의 저항을 점검한 후 냉각수를 교체해주어야 하는 불편이 따름은 물론, 냉각수 사용주기의 단축으로 인한 교체비용의 증가로 인해 반도체 제조를 위한 비용이 증가되고, 잦은 교체로 인해 생산성도 떨어지는 문제점이 있었다.In addition, in the prior art, even in the case of using a coolant having a large resistance initially to maximize the size of the resistance between the electrode 1 and the ground, the resistance decreases during use, so it is inconvenient to replace the coolant after continuously checking the resistance of the coolant. Of course, due to the increase in the replacement cost due to the shortening of the cooling water use cycle increases the cost for semiconductor manufacturing, there was a problem that the productivity is also reduced due to frequent replacement.

또한, 상기한 종래 기술은 냉각수 순환관(9)이 도체로 작용되므로 이 구간의 저항이 0이 되어 냉각수 자체의 저항에 의한 절연 효과가 매우 미미한 문제점이 있었다.In addition, the above-described conventional technology has a problem that the resistance of this section becomes zero because the cooling water circulation pipe 9 acts as a conductor, and the insulation effect by the resistance of the cooling water itself is insignificant.

상기와 같은 문제점들을 방지하기 위해 전극(1)이 냉각수 순환관(9) 및 냉각수와 절연되어 그라운드와 접지되지 않도록 상기 전극(1) 자체에 절연을 실시하는 방식도 있으나, 이러한 방식은 사용중 전극(1)의 절연이 파괴되어 장비에 문제를 일으키는 일이 빈번하므로 별로 바람직하지 않다.In order to prevent the above problems, there is also a method of insulating the electrode 1 itself so that the electrode 1 is insulated from the coolant circulation pipe 9 and the coolant so as not to be grounded. It is not preferable to break down the insulation of 1) and cause problems with equipment.

상기한 바와 같은 문제점을 감안하여 안출한 본 발명의 목적은, 챔버 내의 전극을 그라운드로 접지시킬 수 있는 가능성이 있는 구성요소들을 모두 절연시킴으로써 상기 전극이 그라운드와 완전 절연되어 전극에 의해 발생되는 플라즈마 방전의 안정성이 확보되도록 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치를 제공함에 있다.The object of the present invention devised in view of the above problems is to insulate all the components that are likely to ground the electrodes in the chamber to ground, so that the electrodes are completely insulated from the ground and the plasma discharge is generated by the electrodes. It is to provide a cooling device for temperature control of the electrode for semiconductor manufacturing to ensure the stability of the.

도 1은 일반적인 반도체 제조용 전극의 온도 제어를 위한 냉각 장치가 개략적으로 도시된 구성도,1 is a configuration diagram schematically showing a cooling apparatus for temperature control of an electrode for manufacturing a general semiconductor;

도 2는 전극이 그라운드와 완전 절연된 이상적인 상태가 도시된 구성도,2 is a configuration diagram showing an ideal state in which the electrode is completely insulated from the ground;

도 3은 전극이 그라운드와 접지되어 있는 실제 상태가 도시된 구성도이다.3 is a configuration diagram showing an actual state in which the electrode is grounded to ground.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

1 : 전극 5 : 쉴드1 electrode 5 shield

7: 커넥터 9 : 냉각수 순환관7: connector 9: cooling water circulation pipe

11 : 냉각수 저장통 13 : 열교환기11: coolant reservoir 13: heat exchanger

15 : 냉각가스 순환관 17 : 순환펌프15: cooling gas circulation pipe 17: circulation pump

19 : 써머커플센서19: Thermocouple Sensor

상기한 바와 같은 본 발명의 목적을 달성하기 위하여, 반도체 제조를 위해 챔버 내에 설치된 전극의 하부에 결합되어 냉각수를 통해 상기 전극을 냉각시키는 냉각수 순환관과, 상기 냉각수 순환관으로 냉각수를 공급하는 동시에 냉각수 순환관을 통과한 후의 냉각수를 저장하는 냉각수 저장통과, 상기 냉각수 저장통의 냉각수가 상기 냉각수 순환관을 통해 순환되도록 순환력을 제공하는 순환수단을 포함한 반도체 제조용 전극의 온도 제어를 위한 냉각 장치에 있어서, 상기 냉각수 순환관은 절연체가 되도록 형성되어 상기 전극이 그라운드와 절연되도록 구성된 것을 특징으로 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치가 제공된다.In order to achieve the object of the present invention as described above, the cooling water circulation pipe coupled to the lower portion of the electrode installed in the chamber for cooling the electrode to cool the electrode through the cooling water, and supplying the cooling water to the cooling water circulation pipe at the same time In the cooling device for temperature control of the electrode for semiconductor manufacturing comprising a cooling water storage tank for storing the cooling water after passing through the circulation pipe, and a circulation means for providing a circulating force so that the cooling water of the cooling water reservoir is circulated through the cooling water circulation pipe, The cooling water circulation pipe is formed to be an insulator is provided with a cooling device for temperature control of the electrode for semiconductor manufacturing, characterized in that the electrode is configured to be insulated from the ground.

이하, 본 발명의 실시 예를 첨부한 도면을 참조하여 설명한다.Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

도 1은 일반적인 반도체 제조용 전극의 온도 제어를 위한 냉각 장치가 개략적으로 도시된 구성도이고, 도 2는 전극이 그라운드와 완전 절연된 이상적인 상태가 도시된 구성도이다.1 is a configuration diagram schematically showing a cooling device for temperature control of a typical semiconductor manufacturing electrode, Figure 2 is a configuration diagram showing an ideal state in which the electrode is completely insulated from the ground.

상기한 도 1 및 도 2를 참조하여 본 발명에 따른 반도체 제조용 전극의 온도 제어를 위한 냉각 장치에 대해 설명하면 다음과 같다.Referring to FIG. 1 and FIG. 2, a cooling apparatus for temperature control of an electrode for semiconductor manufacturing according to the present invention will be described.

먼저, 반도체 제조를 위한 챔버의 쉴드(Shield)(5) 내에 설치된 전극(1)의 하부에는 냉각수를 통해 상기 전극(1)을 냉각시키는 냉각수 순환관(9)의 일측이 결합된다.First, one side of a cooling water circulation pipe 9 for cooling the electrode 1 through cooling water is coupled to a lower portion of the electrode 1 installed in a shield 5 of a chamber for manufacturing a semiconductor.

더 상세하게는, 상기 전극(1)의 하부에는 냉각수가 통과할 수 있는 냉각수유로(1a)가 형성되고, 상기 냉각수 순환관(9)은 그 일측이 상기 냉각수유로(1a)의 입구와 출구에 각각 커넥터(7)에 의해 연통되도록 결합된다.More specifically, a cooling water flow path 1a through which cooling water passes is formed in the lower portion of the electrode 1, and one side of the cooling water circulation pipe 9 is at the inlet and the outlet of the cooling water flow path 1a. Each is coupled so as to be in communication by the connector 7.

여기서, 상기 냉각수 순환관(9)은 내측면에 절연물질이 코팅됨으로써 절연체가 되도록 형성되고, 상기 커넥터(7)는 테프론 또는 세라믹과 같은 절연재질로 만들어져 절연체가 되도록 되어 있다.Here, the cooling water circulation pipe 9 is formed to be an insulator by coating an insulating material on the inner side, and the connector 7 is made of an insulating material such as Teflon or ceramic to be an insulator.

또한, 상기 냉각수 순환관(9)의 타측에는 냉각수 순환관(9)으로 냉각수를 공급하는 동시에 상기 냉각수 순환관(9)을 통과한 후의 냉각수를 저장하는 냉각수 저장통(11)이 설치되고, 상기 냉각수 저장통(11)에는 냉각수 저장통(11)에 저장된 냉각수가 일정 온도 이하로 유지되도록 상기한 냉각수를 냉각시키는 열교환수단을 설치된다.In addition, the other side of the cooling water circulation pipe (9) is provided with a cooling water reservoir (11) for supplying the cooling water to the cooling water circulation pipe (9) and storing the cooling water after passing through the cooling water circulation pipe (9), the cooling water The reservoir 11 is provided with heat exchange means for cooling the above-mentioned coolant so that the coolant stored in the coolant reservoir 11 is kept below a predetermined temperature.

여기서, 상기 열교환수단은 냉각수 저장통(11)의 내부에 설치되어 상기 냉각수 저장통(11)으로 회수된 냉각수를 냉각가스와 열교환시켜 냉각시키는 열교환기(13)와, 상기 열교환기(13)를 통해 냉각수와 냉각가스의 열교환이 이루어지도록 열교환기(13)에 냉각가스를 순환시키는 냉각가스 순환관(15)으로 구성된다.Here, the heat exchange means is installed in the cooling water reservoir 11, the heat exchanger 13 for cooling the heat of the cooling water recovered in the cooling water reservoir 11 by the cooling gas and the cooling water through the heat exchanger (13) And a cooling gas circulation tube 15 for circulating the cooling gas in the heat exchanger 13 so that heat exchange of the cooling gas is achieved.

또한, 상기 열교환기(13)는 애노다이징(Anodizing) 처리를 통해 표면에 산화피막을 형성함으로써 절연체가 되도록 형성되고, 상기 냉각가스 순환관(15)은 상기한 냉각수 순환관(9)과 마찬가지로 내측면에 절연물질을 코팅함으로써 절연체로 되도록 형성되어 있다.In addition, the heat exchanger 13 is formed to become an insulator by forming an oxide film on the surface through anodizing treatment, and the cooling gas circulation pipe 15 is similar to the cooling water circulation pipe 9 described above. It is formed to become an insulator by coating an insulating material on the inner side.

이때, 상기 열교환기(13)에는 통상 냉각수와 냉매가스의 열교환을 고려하여 열전도율이 높은 알루미늄이 이용된다. 따라서, 상기 열교환기(13)의 표면에는 애노다이징 처리를 통해 알루미늄이 산화되어 형성되는 알루미나(Al2O3) 층이 형성되고, 이렇게 형성된 알루미나 층에 의해 상기 열교환기(13)가 완전 부도체가 되게 된다.At this time, in the heat exchanger 13, aluminum having a high thermal conductivity is generally used in consideration of heat exchange between the cooling water and the refrigerant gas. Therefore, an alumina (Al 2 O 3 ) layer formed by oxidizing aluminum is formed on the surface of the heat exchanger 13, and the heat exchanger 13 is completely insulated by the alumina layer thus formed. Becomes.

또한, 상기 냉각수 순환관(9)에는 냉각수 저장통(11)의 냉각수가 상기 냉각수 순환관(9)을 통해 순환되도록 순환력을 제공하는 순환수단이 설치되는 바, 상기 냉각수 순환수단은 순환펌프(17)이고, 상기 순환펌프(17)는 절연체로 되어 있다.In addition, the cooling water circulation pipe 9 is provided with a circulation means for providing a circulating force so that the cooling water of the cooling water reservoir 11 is circulated through the cooling water circulation pipe 9, the cooling water circulation means is a circulation pump (17) ), And the circulation pump 17 is made of an insulator.

여기서, 상기 순환펌프(17)는 그 내측면에 절연물질이 코팅됨으로써 절연체가 되도록 형성되어 있다.Here, the circulation pump 17 is formed to be an insulator by coating an insulating material on its inner surface.

또한, 상기 냉각수 순환관(9)에는 냉각수 순환관(9)을 통과하는 냉각수의 온도를 감지하여 전극(1)의 온도를 제어하기 위한 온도감지수단이 설치되는 바, 상기 온도감지수단은 써머커플센서(Thermocouple Sensor)(19)이고, 상기 써머커플센서(19)는 절연체로 되어 있다.In addition, the cooling water circulation pipe 9 is provided with a temperature sensing means for controlling the temperature of the electrode 1 by sensing the temperature of the cooling water passing through the cooling water circulation pipe 9, the temperature sensing means is a thermocouple It is a sensor (Thermocouple Sensor) 19, and the thermocouple sensor 19 is an insulator.

여기서, 상기 써머커플센서(19)는 그 외측면에 절연물질이 코팅됨으로써 절연체가 되도록 형성되어 있다.Here, the thermocouple sensor 19 is formed to be an insulator by coating an insulating material on its outer surface.

상기한 바와 같이, 본 발명에 의한 냉각 장치를 구성하는 냉각수 순환관(9), 커넥터(7), 열교환기(13), 냉각가스 순환관(15), 순환펌프(17), 써머커플센서(19)가 모두 절연체가 되도록 형성되면 도 2에 도시된 바와 같이 챔버 내부의 전극(1)이 그라운드에서 완전히 절연되게 된다.As described above, the cooling water circulation pipe 9, the connector 7, the heat exchanger 13, the cooling gas circulation pipe 15, the circulation pump 17, and the thermocouple sensor constituting the cooling device according to the present invention ( When all of 19) is formed to be an insulator, as shown in FIG. 2, the electrode 1 inside the chamber is completely insulated from the ground.

즉, 상기 전극(1)을 그라운드로 접지시킬 수 있는 모든 구성요소들을 절연시킴으로써 전극(1)의 완전 절연이라는 이상적인 상태가 구현되게 된다.In other words, by insulating all components that can ground the electrode 1 to ground, an ideal state of complete insulation of the electrode 1 is realized.

이상에서 설명한 바와 같이 본 발명에 따른 반도체 제조용 전극의 온도 제어를 위한 냉각 장치는, 챔버 내의 전극(1)을 그라운드로 접지시킬 수 있는 가능성이 있는 구성요소들이 모두 절연되어 상기 전극(1)이 그라운드와 완전 절연되게 되므로 전극(1)에 의해 발생되는 플라즈마 방전의 안정성이 확보되어 초 미세 가공시 플라즈마의 이상 방전으로 인해 발생되던 공정상의 불안 요소들이 제거되는 이점이 있다.As described above, in the cooling apparatus for temperature control of the electrode for semiconductor manufacturing according to the present invention, all of the components capable of grounding the electrode 1 in the chamber are insulated so that the electrode 1 is grounded. Since it is completely insulated with the stability of the plasma discharge generated by the electrode 1 is secured there is an advantage that the process anxiety caused by the abnormal discharge of the plasma during ultra-fine processing is removed.

또한, 본 발명은 전극(1)의 냉각을 위해 사용되는 고가의 냉각수의 사용주기가 연장되어 그 교체 회수가 줄어들므로 반도체 제조를 위한 비용이 절감될 뿐만 아니라, 생산성 향상에도 기여하게 되는 이점이 있다.In addition, the present invention has the advantage that the use cycle of the expensive cooling water used for cooling the electrode 1 is extended, so that the number of replacement is reduced, not only reduces the cost for semiconductor manufacturing, but also contributes to improved productivity. .

또한, 본 발명은 전극(1) 자체의 절연 여부와 상관없이 사용 가능하므로 기존과 같이 전극(1)의 내부에 절연을 실시한 경우 발생하던 사용중의 절연 파괴로 인한 장비의 이상 발생이 제거되어 장비를 안정적으로 운용할 수 있는 이점이 있다.In addition, the present invention can be used regardless of the insulation of the electrode (1) itself, so that the occurrence of abnormality of the equipment due to the breakdown of the insulation during use, which was generated when the insulation inside the electrode (1) as before, the equipment is removed There is an advantage that can be operated stably.

Claims (5)

반도체 제조를 위해 챔버 내에 설치된 전극의 하부에 결합되어 냉각수를 통해 상기 전극을 냉각시키는 냉각수 순환관과, 상기 냉각수 순환관으로 냉각수를 공급하는 동시에 냉각수 순환관을 통과한 후의 냉각수를 저장하는 냉각수 저장통과, 상기 냉각수 저장통의 냉각수가 상기 냉각수 순환관을 통해 순환되도록 순환력을 제공하는 순환수단을 포함한 반도체 제조용 전극의 온도 제어를 위한 냉각 장치에 있어서,A coolant circulation tube coupled to a lower portion of an electrode installed in a chamber for manufacturing a semiconductor and cooling the electrode through a coolant, and a coolant reservoir for storing coolant after passing through a coolant circulation tube while supplying coolant to the coolant circulation tube; In the cooling device for temperature control of the electrode for semiconductor manufacturing comprising a circulation means for providing a circulating force so that the coolant in the coolant reservoir is circulated through the coolant circulation pipe, 상기 냉각수 순환관은 절연체가 되도록 형성되어 상기 전극이 그라운드와 절연되도록 구성된 것을 특징으로 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치.The cooling water circulation pipe is formed to be an insulator, the cooling device for temperature control of the electrode for semiconductor manufacturing, characterized in that the electrode is configured to be insulated from the ground. 제 1항에 있어서, 상기 전극의 하부에는 냉각수가 통과할 수 있는 냉각수유로가 형성되고, 상기 냉각수 순환관은 상기 냉각수유로의 입구와 출구에 각각 커넥터에 의해 연통되도록 결합되며, 상기 커넥터는 절연체가 되도록 형성된 것을 특징으로 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치.According to claim 1, wherein a lower portion of the electrode is formed with a cooling water passage through which the cooling water can pass, and the cooling water circulation pipe is coupled to communicate with each of the inlet and outlet of the cooling water channel by a connector, the connector is insulator Cooling apparatus for temperature control of the electrode for semiconductor manufacturing, characterized in that formed so as to. 제 1항에 있어서, 상기 순환수단은 냉각수 순환관에 설치되어 냉각수에 순환력을 제공하는 순환펌프로 구성되고, 상기 순환펌프는 절연체가 되도록 형성된 것을 특징으로 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치.The cooling device of claim 1, wherein the circulation means comprises a circulation pump installed in a cooling water circulation pipe to provide a circulation force to the cooling water, and the circulation pump is formed to be an insulator. Device. 제 1항에 있어서, 상기 냉각수 저장통에 저장된 냉각수가 일정 온도 이하로 유지되도록 상기한 냉각수를 냉각시키는 열교환수단을 더 포함하되,The method of claim 1, further comprising heat exchange means for cooling the cooling water so that the cooling water stored in the cooling water reservoir is maintained below a predetermined temperature, 상기 열교환수단은 냉각수 저장통의 내부에 설치되어 상기 냉각수 저장통으로 회수된 냉각수를 냉각가스와 열교환시켜 냉각시키는 열교환기와, 상기 열교환기를 통해 냉각수와 냉각가스의 열교환이 이루어지도록 열교환기에 냉각가스를 순환시키는 냉각가스 순환관으로 구성되고, 상기 열교환기와 냉각가스 순환관은 각각 절연체가 되도록 형성된 것을 특징으로 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치.The heat exchange means is installed in the cooling water reservoir and a heat exchanger for cooling the cooling water recovered in the cooling water reservoir by heat exchange with the cooling gas, the cooling to circulate the cooling gas in the heat exchanger so that the heat exchange between the cooling water and the cooling gas through the heat exchanger And a gas circulation tube, wherein the heat exchanger and the cooling gas circulation tube are formed to be insulators, respectively. 제 1항에 있어서, 상기 냉각수 순환관을 통과하는 냉각수의 온도를 감지하여 전극의 온도를 제어하기 위한 온도감지수단을 더 포함하되,According to claim 1, Further comprising a temperature sensing means for controlling the temperature of the electrode by sensing the temperature of the cooling water passing through the cooling water circulation pipe, 상기 온도감지수단은 냉각수 순환관에 설치되어 상기 냉각수 순환관을 통과하는 냉각수의 온도를 감지하는 써머커플센서로 구성되고, 상기 써머커플센서는 절연체가 되도록 형성된 것을 특징으로 하는 반도체 제조용 전극의 온도 제어를 위한 냉각 장치.The temperature sensing means is installed in the cooling water circulation pipe is composed of a thermocouple sensor for sensing the temperature of the cooling water passing through the cooling water circulation pipe, the thermocouple sensor is a temperature control of the electrode for semiconductor manufacturing, characterized in that formed as an insulator Cooling system for
KR1019990061998A 1999-12-24 1999-12-24 Chiller for controlling temperature of electrode in semiconductor manufacture KR20010063894A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210004746A (en) * 2019-07-05 2021-01-13 세메스 주식회사 Apparatus for controlling temperature of top module and system for treating substrate with the apparatus
KR102344727B1 (en) * 2021-07-30 2021-12-31 주식회사 한강기술 Thunderbolt stabilization system for mountains area electric pole with transformer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210004746A (en) * 2019-07-05 2021-01-13 세메스 주식회사 Apparatus for controlling temperature of top module and system for treating substrate with the apparatus
KR102344727B1 (en) * 2021-07-30 2021-12-31 주식회사 한강기술 Thunderbolt stabilization system for mountains area electric pole with transformer

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