KR20010058479A - Device For Polishing The Semiconductor Device Using Magnetic Field And Method Thereof - Google Patents
Device For Polishing The Semiconductor Device Using Magnetic Field And Method Thereof Download PDFInfo
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- KR20010058479A KR20010058479A KR1019990065812A KR19990065812A KR20010058479A KR 20010058479 A KR20010058479 A KR 20010058479A KR 1019990065812 A KR1019990065812 A KR 1019990065812A KR 19990065812 A KR19990065812 A KR 19990065812A KR 20010058479 A KR20010058479 A KR 20010058479A
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- Prior art keywords
- wafer
- polishing
- magnetic field
- polishing pad
- pad
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- 238000005498 polishing Methods 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title description 5
- 239000000126 substance Substances 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 화학기계적연마법(Chemical Mechanical Polishing)에 관한 것으로서, 특히, 웨이퍼를 연마하는 연마패드에 자계발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하도록 하는 자기장을 이용한 화학기계적연마장치 및 연마방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to chemical mechanical polishing, and in particular, magnetic field generating means is provided on a polishing pad for polishing a wafer to generate a magnetic field with a different polarity at an appropriate position, thereby being supplied between the wafer and the polishing pad. The present invention relates to a chemical mechanical polishing apparatus and a polishing method using a magnetic field to uniformly control the distribution of an abrasive to allow a wafer to be polished in an improved polishing uniformity by a polishing pad to improve electrical characteristics of the device.
일반적으로, 고집적 메모리 소자의 제조공정에서 각 층별 셀영역 및 주변회로 영역에 적층된 차이로 인하여 반도체소자의 위상차가 발생되고, 이는 반도체소자를 제조하기 위하여 평탄화공정이 필요하게 된다. 집적도가 낮은 소자의 경우에는 유동성이 풍부한 층간절연막을 적층하여 열을 가하여서 유동성을 풍부하게 하여 평탄화하는 방법을 이용하였으나. 고집적 반도체소자의 경우에는 한계에 다다르게 되었다.In general, in the manufacturing process of the highly integrated memory device, the phase difference of the semiconductor device is generated due to the difference stacked in the cell area and the peripheral circuit area of each layer, which requires a planarization process to manufacture the semiconductor device. In the case of a low integration device, a method of stacking an interlayer insulating film rich in fluidity and applying heat to enrich the fluidity and planarize the device. Highly integrated semiconductor devices have reached their limits.
그로 인하여 층간절연막에 콘택을 형성하고, 이 콘택 내부에 금속층을 매립하여 불필요한 부분을 제거하기 위하여 화학기계적연마공정(Chemical Mechanical Polishing)을 진행하게 된다.As a result, a contact is formed in the interlayer insulating film, and a metal mechanical layer is embedded in the contact to remove unnecessary portions.
물론 상기 화학기계적연마공정은, 금속배선층 이외에도 일반적인 층간절연막을 연마하기 위하여 사용되는 경우도 있으며, 여러가지의 종류의 층을 평탄화하기 위하여 이용되어진다.Of course, the chemical mechanical polishing process may be used to polish a general interlayer insulating film in addition to the metal wiring layer, and is used to planarize various kinds of layers.
이 화학기계적연마공정을 진행할 때, 텅스텐플러그 이외의 메탈층을 완전하게 제거하여야만 메탈브리지(Metal Bridge)에 의한 소자의 페일을 막을 수 있다.When the chemical mechanical polishing process is performed, the metal bridge other than the tungsten plug must be completely removed to prevent the device from failing by the metal bridge.
상기 CMP연마공정을 진행할 때, 발생되는 웨이퍼 내의 연마불균일도 (Non-Uniformity)에 의하여 금속층을 완전하게 제거하기 위한 오버 폴리싱 (Over-Polishing)이라는 공정을 진행하기도 한다.When the CMP polishing process is performed, a process called over-polishing may be performed to completely remove the metal layer due to non-uniformity in the wafer.
그러나, 일반적인 CMP연마공정은 증착된 물질을 전면적으로 연마하기 때문에 연마균일도(Polishing Uniformity)가 매우 중요하고, 연마 균일도에 따라 심한 경우, 내부 선을 연결하기 위해 필요한 폴리사이드 배선이나 금속배선층의 연마까지 동시에 이루어지므로 반도체소자에 브릿지(Bridge)를 유발하고 그로 인하여 소자의 전기적인 특성이 저하되는 문제를 지닌다.However, in the general CMP polishing process, polishing uniformity is very important because the entire surface of the deposited material is polished, and in the case of severe polishing uniformity, even the polishing of the polyside wiring or the metal wiring layer required to connect the internal wires is required. Since it is made at the same time, there is a problem that the bridge (bridge) in the semiconductor device and thereby the electrical characteristics of the device is degraded.
본 발명은 이러한 점을 감안하여 안출한 것으로서, 웨이퍼를 연마하는 연마패드에 자기장발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하는 것이 목적이다.The present invention has been made in view of the above, and since the magnetic field generating means is installed on the polishing pad for polishing the wafer, the magnetic field is generated by varying the polarity at an appropriate position, so that the amount of the abrasive supplied between the wafer and the polishing pad is uniformly controlled. Thus, the wafer is polished in a state where the polishing uniformity is improved by the polishing pad, thereby improving the electrical characteristics of the device.
도 1은 일반적인 연마패드를 사용하여 웨이퍼를 연마하는 상태를 보인 도면이고,1 is a view showing a state of polishing a wafer using a general polishing pad,
도 2는 본 발명의 일실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며,2 is a view showing a state of polishing a wafer using a magnetic field according to an embodiment of the present invention,
도 3은 본 발명의 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며,3 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention,
도 4는 본 발명의 또 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이다.4 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
10 : 연마패드 15 : 패드회전축10: polishing pad 15: pad rotating shaft
20 : 연마제 30 : 웨이퍼20: abrasive 30: wafer
35 : 웨이퍼회전축 40 : 자기장발생수단35: wafer rotation axis 40: magnetic field generating means
44, 44a, 44b : 양극 46, 46a, 46b : 음극44, 44a, 44b: anode 46, 46a, 46b: cathode
50 : 제어수단50: control means
이러한 목적은 웨이퍼회전축에 고정되어 회전하는 웨이퍼와; 상기 웨이퍼의 저면에 접촉되어 패드회전축으로 회전하고, 표면에 공급된 연마제로 연마를 수행하는 연마패드를 갖는 연마장치에 있어서, 상기 연마패드에 자기장을 인가하여 상기 웨이퍼와 연마패드 사이에 공급되는 연마제 분포를 균일하게 하는 자기장발생수단과; 상기 자기장발생수단을 제어하여 연마패드에서 자기장의 크기와 자기장이 형성되는 위치를 조절하는 제어수단을 포함하여 이루어진 자기장을 이용한 화학기계적연마장치를 제공함으로써 달성된다.This object is a wafer that is fixed to the wafer rotation axis and rotates; A polishing apparatus having a polishing pad that contacts a bottom surface of the wafer to rotate on a pad rotation axis and performs polishing with an abrasive supplied to a surface, the polishing apparatus being applied between the wafer and the polishing pad by applying a magnetic field to the polishing pad. Magnetic field generating means for making the distribution uniform; It is achieved by providing a chemical mechanical polishing apparatus using a magnetic field comprising a control means for controlling the magnetic field generating means to control the size of the magnetic field and the position where the magnetic field is formed in the polishing pad.
그리고, 상기 자기장발생수단에 의하여 발생되는 자기장의 크기는, 0.1 mGauss ∼ 10Gauss의 범위에 있는 세기인 것이 바람직 하다.The magnitude of the magnetic field generated by the magnetic field generating means is preferably in the range of 0.1 mGauss to 10 Gauss.
그리고, 본 발명의 목적은, 웨이퍼의 저면에 접촉되어 패드회전축으로 회전하는 연마패드 표면에 공급된 연마제로 연마를 수행하는 화학기계적연마방법에 있어서, 상기 연마패드에 자기장을 인가하여 상기 웨이퍼와 연마패드 사이에 공급되는 연마제 분포를 조절하여 웨이퍼의 연마균일도를 향상하도록 하는 자기장을 이용한 화학기계적연마방법을 제공함으로써 달성된다.In addition, an object of the present invention, in the chemical mechanical polishing method for performing polishing with an abrasive supplied to the surface of the polishing pad in contact with the bottom surface of the wafer to rotate on the pad rotation axis, applying a magnetic field to the polishing pad to polish the wafer and It is achieved by providing a chemical mechanical polishing method using a magnetic field to adjust the distribution of the abrasive supplied between the pads to improve the polishing uniformity of the wafer.
상기 연마패드 내에 자기장을 다양한 간격으로 형성하여 웨이퍼를 연마하도록 한다.Magnetic fields are formed in the polishing pad at various intervals to polish the wafer.
상기 연마패드와 웨이퍼 사이에 자기장을 형성하여 웨이퍼를 연마하는 것이 바람직 하다.It is preferable to form a magnetic field between the polishing pad and the wafer to polish the wafer.
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 일실시예의 구성에 대해상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the configuration of a preferred embodiment of the present invention.
도 2는 본 발명의 일실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며, 도 3은 본 발명의 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며, 도 4는 본 발명의 또 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이다.2 is a view showing a state of polishing a wafer using a magnetic field according to an embodiment of the present invention, Figure 3 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention, 4 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention.
본 발명의 구성을 살펴 보면, 웨이퍼회전축(35)에 고정되어 회전하는 웨이퍼 (30)와; 상기 웨이퍼(30)의 저면에 접촉되어 패드회전축(15)으로 회전하고, 표면에 공급된 연마제(20)로 연마를 수행하는 연마패드(10)를 갖는 연마장치에 있어서, 상기 연마패드(10)에 자기장을 인가하여 상기 웨이퍼(30)와 연마패드(10) 사이에 공급되는 연마제(20) 분포를 균일하게 하는 자기장발생수단(40)과; 상기 자기장발생수단(40)을 제어하여 연마패드(20)에서 자기장의 크기와 자기장이 형성되는 위치를 조절하는 제어수단(50)을 포함하여 이루어진다.Looking at the configuration of the present invention, the wafer 30 is fixed to the wafer rotating shaft 35 and rotated; In the polishing apparatus having a polishing pad (10) in contact with the bottom surface of the wafer (30) to rotate on the pad rotating shaft (15) and to perform polishing with the abrasive (20) supplied to the surface, the polishing pad (10) Magnetic field generating means (40) for applying a magnetic field to the wafer (30) and uniformly distributing the abrasive (20) supplied between the polishing pad (10); It comprises a control means 50 for controlling the magnetic field generating means 40 to adjust the size of the magnetic field and the position in which the magnetic field is formed in the polishing pad 20.
그리고, 상기 자기장발생수단(40)에 의하여 발생되는 자기장의 크기는, 0.1 mGauss ∼ 10Gauss의 범위에 있는 세기를 갖도록 한다.In addition, the magnitude of the magnetic field generated by the magnetic field generating means 40 is such that it has an intensity in the range of 0.1 mGauss to 10 Gauss.
상기 자기장발생수단(40)은, 전자석을 사용하도록 한다.The magnetic field generating means 40 is to use an electromagnet.
그리고, 도 2에 도시된 바와 같이, 상기 연마패드(15)의 중심부위에 양극 (44)을 형성하고, 양측 끝단부위에 음극(46)을 형성하여 두개의 자기장이 형성되도록 하여 웨이퍼(30)와 연마패드(30) 사이에 자기장을 형성한 상태를 보인다.As shown in FIG. 2, the anode 44 is formed on the center of the polishing pad 15, and the cathodes 46 are formed on both ends thereof so that two magnetic fields are formed. The magnetic field is formed between the polishing pads 30.
도 3에 도시된 바와 같이, 상기 연마패드(10)의 중심부분 및 양측 끝단부위에 음극(46a)을 형성하고, 웨이퍼(30)의 중심부분에 양극(44a)을 형성하여 자기장이 연마패드(10)에 대하여 수평으로 형성하도록 한다.As shown in FIG. 3, the cathode 46a is formed at the center portion and both ends of the polishing pad 10, and the anode 44a is formed at the center portion of the wafer 30 so that a magnetic field may be formed. It should be formed horizontally with respect to 10).
도 4에 도시된 바와 같이, 상기 연마패드(10)의 배면부위에 음극(46b)을 형성하고, 웨이퍼(30)의 배면부분에 양극(44a)을 형성하여서 자기장이 연마패드(10)와 웨이퍼(30) 사이에 상,하로 형성되도록 한다.As shown in FIG. 4, the cathode 46b is formed on the back side of the polishing pad 10, and the anode 44a is formed on the back side of the wafer 30 so that a magnetic field is generated by the polishing pad 10 and the wafer ( 30) to be formed up and down between.
이와 같이, 상기 연마패드(10)에 양극 및 음극의 형성되는 위치 및 세기 등은 가변하는 것이 가능하다.As such, the position and the intensity of the positive and negative electrodes formed on the polishing pad 10 may vary.
이와 같이 구성된 상태에서 도 2경우를 예를 들어서 작용을 살펴 보면, 자기발생수단(40)에서 자기장을 인가하여 연마패드(10)에 양극(44) 및 음극(46)을 형성한 후, 패드회전축(15)을 미도시된 구동수단을 사용하여 회전시키도록 한다.Referring to the operation of FIG. 2 in the state configured as described above, for example, a magnetic field is applied from the magnetic generating means 40 to form the positive electrode 44 and the negative electrode 46 on the polishing pad 10, and then the pad rotation shaft. To rotate the 15 using a drive means not shown.
그리고, 상기 웨이퍼회전축(35)을 회전하여 웨이퍼(30)를 연마패드(30)의 회전방향과 반대 방향으로 회전시켜 연마공정을 진행하고, 연마패드(10)와 웨이퍼 (30) 사이에는 연마제(20)를 공급하도록 한다.Then, the wafer rotation shaft 35 is rotated to rotate the wafer 30 in a direction opposite to the rotation direction of the polishing pad 30 to perform a polishing process. 20) to be supplied.
이러한 상태에서 웨이퍼(30)는 연마패드(110)와 연마제(20)에 의하여 연마되어지게 된다.In this state, the wafer 30 is polished by the polishing pad 110 and the abrasive 20.
한편, 상기 연마패드(10)의 양극(44)(44a)(44b)과 음극(46)(46a)(46b) 사이에 형성되는 자기장(42)은 금속성분인 연마제(20)를 골고루 균일하게 분포하는 역할을 하고, 연마제(20)의 이동을 제어하므로 웨이퍼(30)의 연마효율을 최대한도로 높여주는 역할을 한다.On the other hand, the magnetic field 42 formed between the anodes 44, 44a, 44b and the cathodes 46, 46a, 46b of the polishing pad 10 evenly distributes the abrasive 20, which is a metal component. It serves to distribute and to control the movement of the abrasive 20 serves to increase the polishing efficiency of the wafer 30 to the maximum.
그리고, 자기발생수단(40)에서 발생되는 자기장이 연마패드(10)에서 현성되는 세기 및 위치등을 제어수단(50)을 사용하여 조절하도록 한다.Then, the magnetic field generated by the magnetic generating means 40 to adjust the strength and position, etc. are manifested in the polishing pad 10 using the control means 50.
상기한 바와 같이, 본 발명에 따른 자기장을 이용한 화학기계적연마장치 및 그를 이용한 방법을 이용하게 되면, 웨이퍼를 연마하는 연마패드에 자기장발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하는 매우 유용하고 효과적인 발명이다.As described above, when the chemical mechanical polishing apparatus using the magnetic field and the method using the same according to the present invention are used, the magnetic field generating means is installed on the polishing pad for polishing the wafer to generate a magnetic field with different polarities at an appropriate position. It is a very useful and effective invention to improve the electrical properties of the device by controlling the distribution of the abrasive supplied between the polishing pad and the polishing to improve the polishing uniformity by the polishing pad.
또한, 본 발명을 이용하는 경우, 현재 대규모로 소모되고 있는 연마제의 사용을 자기장으로 제어하므로 연마제의 사용을 현저하게 줄일 수 있는 장점을 지닌다.In addition, in the case of using the present invention, since the use of the abrasive, which is currently consumed on a large scale, is controlled by a magnetic field, the use of the abrasive is significantly reduced.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990065812A KR100564425B1 (en) | 1999-12-30 | 1999-12-30 | Device For Polishing The Semiconductor Device Using Magnetic Field And Method Thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019990065812A KR100564425B1 (en) | 1999-12-30 | 1999-12-30 | Device For Polishing The Semiconductor Device Using Magnetic Field And Method Thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102785131A (en) * | 2012-03-23 | 2012-11-21 | 中国科学院光电技术研究所 | Rigidity-controllable small grinding tool polishing disk based on magnetorheological fluid and polishing method |
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| US5449313A (en) * | 1992-04-14 | 1995-09-12 | Byelocorp Scientific, Inc. | Magnetorheological polishing devices and methods |
| JPH08155831A (en) * | 1994-12-06 | 1996-06-18 | Nippondenso Co Ltd | Polishing device and polishing method |
| JPH08203861A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Mechanochemical polishing method and device |
| JPH10209090A (en) * | 1997-01-23 | 1998-08-07 | Matsushita Electric Ind Co Ltd | Polishing method and polishing equipment of semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102785131A (en) * | 2012-03-23 | 2012-11-21 | 中国科学院光电技术研究所 | Rigidity-controllable small grinding tool polishing disk based on magnetorheological fluid and polishing method |
| CN102785131B (en) * | 2012-03-23 | 2014-08-06 | 中国科学院光电技术研究所 | Rigidity-controllable small grinding tool polishing disk based on magnetorheological fluid and polishing method |
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