KR20010058325A - Reticle having pattern for measurement registration error and method for forming pattern for measurement registration error - Google Patents

Abstract

PURPOSE: A reticle having a pattern for measuring a registration error is provided to monitor an error state regarding respective mask patterns embodied in the reticle, by disposing the pattern for measuring the registration error in a region corresponding to the scribe line of a wafer or in an extra region. CONSTITUTION: A reticle(20) has mask patterns by using a chrome pattern formed on a quartz substrate. A pattern(10) for measuring a registration error capable of monitoring an align state of respective mask patterns formed in a portion corresponding to the cell region of a wafer is embodied, composed of a vernier and a sub-vernier.

Description

RETICLE HAVING PATTERN FOR MEASUREMENT REGISTRATION ERROR AND METHOD FOR FORMING PATTERN FOR MEASUREMENT REGISTRATION ERROR}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle for manufacturing a semiconductor device, and more particularly, a reticle having a registration error measurement pattern capable of monitoring a registration error occurring during fabrication of the reticle, and a pattern for measuring the registration error. It relates to a method of forming.

In manufacturing a semiconductor device, contact holes and various patterns are usually formed through a photolithography process. The photolithography process includes a process of forming an etch barrier film on an etch target and a process of etching the etch target using the etch barrier film, wherein the process of forming the etch barrier film is, for example, on an etch target And a step of applying the photosensitive film, a step of exposing the applied photosensitive film, and a step of developing the exposed photosensitive film.

Here, the exposure process is performed using an exposure mask called a reticle, and the reticle is manufactured by forming an opaque chromium pattern on a quartz substrate having transparency.

In order to fabricate the reticle, conventionally, in the state where a chromium film and a photoresist film are sequentially formed on a quartz substrate, for example, assuming that 63 mask patterns are provided in one reticle, first, a first mask pattern The exposure is performed by placing a light source in the area to be formed, and then, the light source is placed in an initial position, and again, the light source is placed in an area where a second mask pattern is to be formed, and then exposure is performed. The method of disposing to the initial position is repeatedly performed to the region where the 63rd mask pattern is to be formed, and then a developing process is performed on all the exposed regions to form a photoresist pattern in the region where each mask pattern is to be formed, and Then, a portion of the chromium film exposed by the etching process using this as an etch barrier is etched to produce a reticle having 63 mask patterns therein.

However, when the reticle is manufactured, a registration error, that is, a phenomenon in which each mask pattern formed on the reticle is not formed at the correct position occurs. In particular, since the reliability of the actual pattern embodied on the wafer depends on the amount and the number of registration errors generated during fabrication of the reticle, it is very important to suppress or minimize the registration errors in order to increase the manufacturing yield of the semiconductor device. Do.

To this end, conventionally, by monitoring the alignment state of the mask pattern provided in the reticle from the value obtained from the overlay vernier formed on the scribe line of the actual wafer, and digitize it and use it as correction data in the manufacture of the reticle, the reticle The registration error generated at the time of fabrication is reduced.

However, since the conventional method for reducing registration error cannot find a specific mask pattern portion whose registration error is out of an acceptable range, it is inevitable to perform uniform correction on all mask patterns included in the reticle, Accordingly, due to the inability to perform correction for each mask pattern formation region, not only accurate correction of registration errors, but also satisfactory correction cannot be performed. As a result, reliability of such a reticle is ensured. There is a problem that cannot be done.

In particular, due to the high integration of semiconductor devices, the critical dimension of the pattern that can be realized through the exposure process is reaching a limit, which is also applied to the manufacture of the reticle, for example, when manufacturing a reticle that is applied to a 0.13㎛ class device. The above-described degree of registration error is severe, and the correction thereof is not properly performed.

Accordingly, the present invention has been made to solve the above problems, the reticle is provided with a pattern for registration error measurement that can reduce the registration error generated during the manufacturing of the reticle, and can easily perform the correction; It is an object of the present invention to provide a method for forming the registration error measurement pattern.

1 is a plan view showing a reticle provided with a pattern for measuring a registration error according to an embodiment of the present invention.

2 is a view for explaining a method of forming a registration error measurement pattern according to an embodiment of the present invention.

3 is a view for explaining a method for monitoring a registration error according to an embodiment of the present invention.

(Explanation of symbols for the main parts of the drawing)

1: Mod Vernier 2: Purple Vernier

5: cell area corresponding part 6: scribe line corresponding part

10: registration error measurement pattern

20: reticle

The reticle of the present invention for achieving the above object is a structure in which a chromium pattern is formed on a quartz substrate and is provided with several mask patterns by the chromium pattern, a portion corresponding to a scribe line of a wafer, or And a registration for monitoring the alignment state of each mask pattern formed in a portion corresponding to the cell region of the wafer, which is composed of a mover aligner and a jaber aligner in a portion other than the portion corresponding to the cell region and the scribe line of the wafer. Characterized in that the error measurement pattern is provided.

In addition, the method for forming a registration error measurement pattern according to the present invention for achieving the above object includes a reticle portion corresponding to the scribe line of the wafer, or a reticle portion other than the portion corresponding to the scribe and cell regions of the wafer. A method of forming a registration error measurement pattern comprising a plurality of mask patterns, comprising a plurality of mask patterns, comprising a plurality of mask patterns, which are composed of a mover aligner and a subverb vernier, and which can monitor an alignment state of mask patterns formed in a reticle portion corresponding to the cell region of the wafer. At the time of initial exposure to the formation regions, exposure for forming all the parentiers corresponding to all the mask pattern formation regions is simultaneously performed, and at the time of exposure to the subsequent mask pattern formation region, the jabber corresponding to the previous mask pattern formation region. Performing exposure together to form an anneal It is characterized by.

According to the present invention, since the registration error measurement pattern which can monitor the alignment state of each mask pattern is provided in the area | region corresponding to the scribe line of a wafer, or an extra area | region, the alignment state in each mask pattern is measured. Based on this, a correction for a more accurate mask pattern can be performed, and as a result, the reliability of the reticle can be improved.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a reticle according to an embodiment of the present invention, as shown, the portion of the reticle 20 of the present invention corresponding to the cell region 5 of the wafer, that is, the portion where the mask pattern is to be formed For example, the registration error measurement pattern 10 which is divided into 63 areas and which corresponds to the scribe line 6 of the wafer can monitor the degree of registration error occurring in each divided area. It is provided.

Here, the registration error measurement pattern 10 is, as shown in Figure 2, the picture frame shape of the parent vernier (1) and the child vernier (2) formed inside the mother vernier (1) The registration error measurement pattern, which is composed of the Moberier 1 and the Jaberier 2, is provided with 63 pieces equal to the number of divided regions, that is, the number of mask patterns.

In order to form the Moberier 1 and the Jabereer 2, in the embodiment of the present invention, the Moberier 1 corresponds to all the mask patterns upon exposure to the first area. Simultaneously perform exposure to form respective mowers, and perform exposure to the subordinates 2 to form subordinates corresponding to the first region upon exposure to the second region, Subsequently, an exposure is performed to form a javernier corresponding to the second region at the time of exposure to the third region, and after the exposure is performed to the javernier corresponding to each region in this manner, subsequent development And an etching process.

On the other hand, after the registration error measurement patterns that can monitor the registration error in each mask pattern in the reticle 20 in the above manner, as shown in FIG. The alignment of the X and Y axes between the Jaberier 2 is monitored.

Equations 1 and 2 below are calculation formulas for quantifying the alignment between the Moberier and Jaberier.

(X ₁ -X ₂ ) / 2 ------------------ (Equation 1)

(Y ₁ -Y ₂ ) / 2 ------------------ (Equation 2)

Therefore, from the obtained value, the degree of registration error in each mask pattern can be measured, and by using this as correction data, the registration error in each mask pattern formation region generated at the time of manufacturing the reticle can be reduced to be satisfactory. As a result, it is possible to improve the reliability of the semiconductor device to which such a reticle is applied.

As described above, the present invention provides a registration error measurement pattern capable of monitoring the registration error degree in each mask pattern in a region corresponding to a scribe line of a wafer or an extra region in manufacturing a reticle, Since the error degree of each mask pattern included in the reticle can be monitored and the masked result can be quantified to perform correction for each mask pattern, a reticle with a minimum registration error can be obtained. Therefore, the reliability of the semiconductor device to which such a reticle is applied can be improved.

Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.

Claims (3)

A reticle in which a chrome pattern is formed on a quartz substrate, and several mask patterns are provided by the chrome pattern. A reticle comprising a registration error measurement pattern comprising a mover aligner and a subverb errone, and configured to monitor an alignment state of each mask pattern formed in a portion corresponding to the cell region of the wafer. . According to claim 1, wherein the registration error measurement pattern, A reticle provided in a portion corresponding to a scribe line of a wafer or in a portion other than the portion corresponding to a cell region and a scribe line of a wafer. A reticle portion corresponding to the scribe line of the wafer, or a reticle portion other than the portion corresponding to the scribe and cell regions of the wafer, and composed of a mover aligner and a jaber aligner, and a reticle portion corresponding to the cell region of the wafer. A method of forming a registration error measurement pattern for monitoring an alignment state of mask patterns formed on a substrate, the method comprising: At the first exposure to several mask pattern formation regions, exposure is performed simultaneously to form all the parentiers corresponding to all the mask pattern formation regions, and the previous mask pattern formation region upon exposure to subsequent mask pattern formation regions. A method for forming a registration error measurement pattern, characterized in that the exposure is performed together to form a corresponding javernier.