KR20010047141A - Apparatus for rapid thermal processing - Google Patents

Abstract

PURPOSE: A rapid thermal processing apparatus is provided to easily replace a lamp by exchanging the lamps by a single module unit, and to improve temperature uniformity by reducing change of temperature distribution according to a structural error generated in the exchange process. CONSTITUTION: A rapid thermal processing apparatus includes a process chamber, a wafer supporting unit, a heating unit and a power controller. The heating unit includes a plurality of single modules in which both ends of a plurality of bar-type infrared lamps(40) are fixed in two fixing units(147') vertical to the infrared lamps. The fixing unit has a plurality of electrodes(148') and an insulator for insulating the surface of the fixing units. The electrodes are electrically connected to ends of the infrared lamps by one-to-one correspondence to the infrared lamps. External power is distributed and applied to the electrodes.

Description

Rapid thermal processing unit {Apparatus for rapid thermal processing}

The present invention relates to a rapid heat treatment apparatus, and more particularly, to a rapid heat treatment apparatus with improved heating means.

The most important process element in a rapid heat treatment system is to ensure that the wafer is heat treated with a uniform temperature distribution at the desired temperature. The device must not only have a temperature change of about 200 ° C per second, but also be able to heat up to very high temperatures, so precise control of input power is required for accurate temperature control.

In general, a rapid heat treatment apparatus uses a plurality of infrared lamps, such as tungsten-halogen lamps, arranged in parallel or orthogonally as its heat source. These lamps are generally divided into rod and bulb types. The following are the things that can cause errors related to temperature control.

(Iii) differences in the characteristics of each power controller;

(Ii) Differences in the characteristics of the connection wiring used between the power controller and the lamp

(Iii) Difference in junction between lamp electrodes and wiring

(Iii) the difference in the characteristics of the lamp itself

In addition to such differences, the overall temperature distribution can also be changed by lamp replacement or the like. Therefore, when replacing a lamp, it is preferable to replace all at once. This is because the aging times of the lamps are similar to each other. In the case of a tungsten-halogen lamp, its lifetime depends on the bonding state of the tungsten wire and the lamp electrode, the intensity and time of the applied electric power, the bonding state between the lamp electrode and the wiring, and the like.

1 to 3 are views for explaining a conventional rapid heat treatment apparatus, Figure 1 is a schematic cross-sectional view of the rapid heat treatment apparatus, Figure 2 is a schematic view of the rod-shaped tungsten-halogen lamp 40 of Figure 1, 3 is a schematic layout of the rod-shaped tungsten-halogen lamp 40.

Referring to FIG. 1, the heat treatment space is provided by the process chamber 10, and the chamber 10 is divided into upper and lower spaces by the quartz plate 20. The wafer 50 is supported by a support 60 installed in the lower space of the chamber 10, and a rod-shaped tungsten-halogen lamp 40 for heating the wafer 50 is installed in the upper space of the chamber 10. do. In order to increase the heat treatment efficiency, a reflective film 30 is installed in the upper space of the chamber 10 to intensively reflect infrared light emitted from the tungsten-halogen lamp 40 toward the wafer 50.

Referring to FIG. 2, the tungsten-halogen lamp 40 is provided with tungsten-filament 44 in a quartz tube 42 filled with halogen gas, and tungsten-filament 44 at both ends of the quartz tube 42. The metal electrode 48 is connected to and is made. The portion of the metal electrode 48 adjacent to the quartz tube 42 is surrounded by the insulator 46.

Referring to FIG. 3, external power is distributed in the wiring divider 70 and applied to each tungsten-halogen lamp 40 arranged in parallel. At this time, the tungsten-halogen lamps 40 are divided into several bundles, and the power controller controls the external power applied thereto in units of the bundles.

According to the conventional rapid heat treatment apparatus described above, since the tungsten-halogen lamps 40 are installed separately, a change in the temperature distribution due to an error in the lamp arrangement occurs, and the wiring distributor 70 and the tungsten-halogen lamp 40 The electric wiring installed between them is complicated. In addition, since the contact state between the electrical wiring and the metal electrode 48 installed in the tungsten-halogen lamp 40 is slightly different for each tungsten-halogen lamp 40, a change in temperature distribution occurs. Then, when the tungsten-halogen lamp 40 is replaced, the trouble of having to replace them individually is generated.

Therefore, the technical problem to be achieved by the present invention is to install a plurality of single modules consisting of a plurality of bar-shaped infrared lamps in order to solve the above-mentioned conventional problems, and to provide a rapid heat treatment apparatus to which external power is applied in units of such a single module. To provide.

1 to 3 are views for explaining a conventional rapid heat treatment apparatus;

4 is a plan view for explaining the heating means of the rapid heat treatment apparatus according to the first embodiment of the present invention;

5a and 5b are views for explaining the heating means of the rapid heat treatment apparatus according to the second embodiment of the present invention.

<Description of Reference Numbers for Main Parts of Drawings>

10: process chamber 20: quartz plate

30: reflective film 40: rod-shaped tungsten-halogen lamp

42: quartz tube 44: tungsten filament

48: metal electrode 46: insulator

50: wafer 60: support

70: wiring splitter 147, 147 ': holder

148, 148 ': electrode

According to an embodiment of the present invention for achieving the above technical problem, the present invention is a process chamber for providing a heat treatment space, wafer support means installed in the process chamber so that the wafer can be seated, and seated on the wafer support means A rapid heat treatment apparatus comprising: a heating means for heating a given wafer; and a power controller for controlling external power applied to the heating means.

The heating means includes a plurality of single modules, wherein both ends of the plurality of rod-shaped infrared lamps arranged in parallel with each other are fixedly installed on two stators arranged perpendicular to the infrared lamp;

The holder includes a plurality of electrodes electrically connected to ends of the infrared lamp in one-to-one correspondence with the infrared lamp, and an insulator for insulating the surface of the holder;

External power is provided to the rapid thermal processing apparatus, characterized in that is distributed and applied to the electrodes.

The rapid thermal processing apparatus according to an embodiment of the present invention is characterized in that the power controller controls the external power applied thereto in units of the single module.

According to another embodiment of the present invention for achieving the above technical problem, the present invention is a process chamber for providing a heat treatment space, wafer support means installed in the process chamber so that the wafer can be seated, and seated on the wafer support means A rapid heat treatment apparatus comprising: a heating means for heating a given wafer; and a power controller for controlling external power applied to the heating means.

The heating means includes a plurality of single modules which are fixedly installed at two ends of the plurality of rod-shaped infrared lamps arranged side by side in parallel with the infrared lamp;

The holder includes one electrode electrically connected to the ends of the infrared lamp, and an insulator for insulating the surface of the holder;

External power is provided to the rapid heat treatment apparatus, characterized in that applied to the electrode.

The rapid thermal processing apparatus according to another embodiment of the present invention is characterized in that the power controller controls the external power applied thereto in units of the single module.

According to the rapid heat treatment apparatus according to the present invention, since the lamp can be replaced by a single module unit, the replacement is easy. In addition, it is possible to reduce the change in temperature distribution due to structural errors that may occur during the replacement, thereby ultimately improving the temperature uniformity. In addition, since the wiring around the infrared lamp is simple, its maintenance and replacement work is convenient.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

Example 1

4 is a plan view for explaining the heating means of the rapid heat treatment apparatus according to the first embodiment of the present invention. Here, the same reference numerals as in FIG. 2 denote components that perform the same function.

Referring to FIG. 4, four rod-shaped tungsten-halogen lamps 40 are arranged side by side in parallel with each other, and both ends of the metal electrodes installed at two ends are disposed perpendicular to the rod-shaped tungsten-halogen lamp 40. It is fixed at 147. Each fixture 147 is electrically insulated from the outside with a surface surrounded by an insulator (not shown).

The stator 147 is provided with a plurality of electrodes 148 electrically connected to both ends of the tungsten-halogen lamp 40 in one-to-one correspondence with the rod-shaped tungsten-halogen lamp 40. External power is distributed and applied to the electrodes 148 of the stator.

The heating means of the rapid heat treatment apparatus is provided with a plurality of single modules having such a component. In addition, the power controller (not shown) controls the external power applied to the single module as a unit.

Example 2

5a and 5b are views for explaining the heating means of the rapid heat treatment apparatus according to the second embodiment of the present invention. Here, the same reference numerals as in FIG. 2 denote components that perform the same function.

Referring to FIG. 5A, four rod-shaped tungsten-halogen lamps 40 are arranged side by side in parallel with each other, and two ends of metal rod-mounted ends are disposed perpendicular to the rod-shaped tungsten-halogen lamp 40. Fixed to 147 '. Each fixture 147 'is electrically insulated from the outside with a surface surrounded by an insulator (not shown).

The stator 147 'is provided with one electrode 148' electrically connected to the ends of the rod-shaped tungsten-halogen lamp 40, and external power is applied to the electrode 148 'of the stator.

Referring to FIG. 5B, the heating means of the rapid heat treatment apparatus includes a plurality of single modules having such components, and the power controller controls the external power applied to the single module as a unit.

According to the rapid heat treatment apparatus according to the present invention as described above, since the lamp can be replaced by a single module unit, the replacement is easy. In addition, it is possible to reduce the change in temperature distribution due to structural errors that may occur during the replacement, thereby ultimately improving the temperature uniformity. In addition, since the wiring around the tungsten-halogen lamp 40 is simple, its maintenance and replacement work is convenient.

The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (4)

A process chamber providing a heat treatment space, wafer support means installed in the process chamber to allow the wafer to be seated, heating means for heating the wafer seated on the wafer support means, and external power applied to the heating means. In the rapid heat treatment apparatus comprising a power controller for controlling the, The heating means includes a plurality of single modules, wherein both ends of the plurality of rod-shaped infrared lamps arranged in parallel with each other are fixedly installed on two stators arranged perpendicular to the infrared lamp; The holder includes a plurality of electrodes electrically connected to ends of the infrared lamp in one-to-one correspondence with the infrared lamp, and an insulator for insulating the surface of the holder; External power is distributed to the electrodes applied to the rapid heat treatment apparatus. The rapid thermal processor of claim 1, wherein the power controller controls external power applied to the single module as a unit. A process chamber providing a heat treatment space, wafer support means installed in the process chamber to allow the wafer to be seated, heating means for heating the wafer seated on the wafer support means, and external power applied to the heating means. In the rapid heat treatment apparatus comprising a power controller for controlling the, The heating means includes a plurality of single modules, wherein both ends of the plurality of rod-shaped infrared lamps arranged in parallel with each other are fixedly installed on two stators arranged perpendicular to the infrared lamp; The holder includes one electrode electrically connected to the ends of the infrared lamp, and an insulator for insulating the surface of the holder; The rapid heat treatment apparatus, characterized in that the external power is applied to the electrode. The rapid thermal processing apparatus of claim 3, wherein the power controller controls the external power applied to the single module as a unit.