KR20010021222A - Probe contact state detecting method and probe contact state detecting apparatus - Google Patents

Abstract

PURPOSE: To obtain a probe contacting state detecting method and detecting device thereof, capable of detecting a probe contacting state using an easy structure and procedure. CONSTITUTION: This probe-contacting state detecting device comprises an insulation resistance measuring instrument and a condenser 3, and the insulation resistance measuring instrument is provided with a DC power source 4 and an ampere meter 5, where measuring probes 6a, 6b are respectively connected to the DC power source 4 and the ampere meter 5. When measuring an insulation resistance between chip terminals of a multiple-chip 1, the chip terminals to be measured are contacted to the probes 6a, 6b of the insulation resistance measuring instrument, and a capacitance between the chip terminals to be tested is measured with chip terminals at the other end corresponding to the chip terminals to be measured, which are connected to the condenser 3. Then, a contact state between the probes 6a, 6b is discriminated by the capacitance value. When the contact state between the probes 6a, 6b is judged as a good contacting state, the insulation resistance is detected with the condenser connected to the other end.

Description

PROBE CONTACT STATE DETECTING METHOD AND PROBE CONTACT STATE DETECTING APPARATUS}

This application is made by claiming priority under the Paris Treaty on the basis of the contents disclosed in Japanese Patent Application No. 1999-224479 filed with the Japan Patent Office on August 6, 1999.

The present invention provides a probe contact state detection method and a probe contact state for detecting a contact state of a probe in contact with each chip terminal in order to measure insulation resistance between chip terminals of a plurality of chip components having a plurality of chip components therein or the resistance value of the chip resistance. It relates to a detection device.

As electronic devices become smaller and lighter, multiple chips, in which a plurality of chip parts such as resistors and capacitors are housed in the same package, have become popular. Since multiple chips store a plurality of chip components in a narrow space, problems such as poor insulation are likely to occur. Therefore, after the manufacture of the multiple chips, the insulation resistance between the chips inside the multiple chips is measured to check whether the insulation is poor.

An insulation resistance measuring instrument is used to measure insulation resistance. The insulation resistance measuring instrument includes a probe contacting an object under test, such as a multi-chip, a DC power supply, and an ammeter. The insulation resistance measuring device applies a voltage to the object under test while the probe is in contact with a terminal of the test object, Obtain the insulation resistance by measuring leakage current.

At this time, if the probe is not surely in contact with the terminal of the object under test, the insulation resistance cannot be measured with high accuracy. Therefore, it is common to detect the contact state of the probe before measuring the insulation resistance.

As a method for detecting a contact state, the following methods 1 and 2 are known.

① If the test object is a condenser, note that the capacitance (capacitance) between probes varies depending on whether or not the probe is in contact with each other.

② Contact state is detected through insulation resistance difference (or current difference) during probe contact and non-contact.

In the above method, since the capacitance between both terminals of each chip component is measured, the contact cannot be detected with high precision for the chip component with a small original capacity.

In the method of (2) above, when the insulation resistance between the chips is originally very large, the contact resistance cannot be detected because there is no difference in insulation resistance at the contact and non-contact of the probe.

In this manner, neither of the methods (1) and (2) above can detect the contact with high accuracy.

On the other hand, the method shown in FIG. 1 is known as a method which can detect a contact with high precision rather than the method of (1) and (2).

1 is an example of measuring the insulation resistance between the terminals (a, b) of a multi-chip with four chip resistors. The probes 6a and 6b of the insulation resistance measuring device 2 are in contact between the terminals a and b, and the other terminals c of the chip resistor having the terminal a and the chip resistors having the terminal b are connected. The contact detection circuits 11 are connected to the other terminals d of Rs.

The insulation resistance measuring device 2 includes a battery 4 and an ammeter 5 connected in series, and the contact detection circuit 11 includes a resistor 12 and a switching switch 13 connected in series.

First, when the changeover switch 13 is turned on (closed circuit), a closed circuit is formed by the insulation resistance measuring device 2 and the contact detection circuit 11. If the probes 6a and 6b are firmly in contact with the terminals a and b, current flows through the DC power source 4 and the resistor 12 through the ammeter 5. On the other hand, if the contact between the probes 6a and 6b and the terminals a and b is incomplete, the contact resistance is generated at that portion, so that the current detected by the ammeter 5 becomes small.

As described above, in the circuit shown in FIG. 1, the contact state of the probes 6a and 6b can be detected according to the magnitude of the current detected by the ammeter 5.

In the circuit shown in FIG. 1, when it is judged that the contact state of the probes 6a and 6b is good, the changeover switch 13 is turned off (open circuit) next. Thereby, the contact detection circuit 11 is electrically disconnected, and the insulation resistance between the terminals a and b is measured according to the current value detected by the ammeter 5 inside the insulation resistance measuring instrument 2.

The circuit shown in FIG. 1 can detect the contact state of the probes 6a and 6b with higher accuracy than the methods of 1 and 2, whereas the circuit is complicated. In addition, when the contact state of the probes 6a and 6b is detected and when the insulation resistance is measured, the changeover switch 13 must be switched.

On the other hand, when measuring the resistance value of the chip resistance, the resistance value of the chip resistance cannot be measured with high accuracy even when the contact between the probe and the chip terminal in contact with each chip terminal is incomplete.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and an object thereof is to provide a probe contact state detection method and a probe contact state detection apparatus capable of detecting a contact state of a probe with a simple configuration and procedure.

In order to achieve the above object, a current flowing between the first and second probes respectively contacting each chip terminal of the other chip component in the multiple chip having a plurality of chip components therein is detected, and the first through the current. And a probe contact state detecting method for detecting whether the contact between the first and second probes and the chip terminal to be measured of the insulation resistance is good when detecting the insulation resistance between the chip terminals in contact with the second probe.

The first and second probes are brought into contact with the first and second chip terminals, which are the measurement target of the insulation resistance, respectively, and a capacitor is connected between the third and fourth chip terminals related to the first and second chip terminals. Measuring a capacitance between the first and second probes;

Detecting whether the contact between the first and second probes and the corresponding first and second chip terminals is good according to the measured capacitance.

In addition, a current flowing between the first and second probes that are in contact with each chip terminal of another chip component in a plurality of chip components in which a plurality of chip components are embedded is detected, and the first and second probes When detecting the insulation resistance between the contacted chip terminals, the probe contact state detection device for detecting whether the contact between the first and second probes and the chip terminal to be measured of the insulation resistance is good,

The first and second probes are brought into contact with the first and second chip terminals, which are the measurement target of the insulation resistance, respectively, and a capacitor is connected between the third and fourth chip terminals related to the first and second chip terminals. Capacitance measuring means for measuring capacitance between the first and second probes;

And contact detecting means for detecting whether contact between the first and second probes and the corresponding first and second chip terminals is good according to the measured capacitance.

1 is a circuit diagram showing an example of a conventional probe contact state detection apparatus;

2 is a circuit diagram showing a first embodiment of a probe contact state detection device according to the present invention;

3 is a diagram illustrating an example of multiple chips;

4 is a view showing an example in which a probe and a capacitor are connected to the same chip terminal;

Fig. 5 is a circuit diagram showing a second embodiment of the probe contact state detection device according to the present invention.

* Description of the symbols for the main parts of the drawings *

1: multi chip 2: insulation resistance meter

3: condenser 4: DC power

5: ammeter

6a: Probe 6b: Probe

a: terminal b: terminal

Hereinafter, a probe contact state detection method and a probe contact state detection apparatus according to the present invention will be described in detail with reference to the drawings.

(1st embodiment)

2 is a circuit diagram showing a first embodiment of a probe contact state detection device according to the present invention. The probe contact state detecting apparatus of FIG. 2 is used when measuring the insulation resistance between chip terminals of multiple chips in which a plurality of chip components such as chip resistance, chip capacitor and ferrite chip are embedded.

FIG. 3 shows an example of the multichip 1, and shows an example of the multichip 1 in which four ferrite chips are embedded. Hereinafter, an example of measuring the insulation resistance between the chip terminals a and b of the multiple chip 1 shown in FIG. 3 will be described.

The probe contact state detection device shown in FIG. 2 includes an insulation resistance measuring device 2 and a capacitor 3. The insulation resistance measuring device 2 has a direct current power source 4 and an ammeter (current detecting means; 5), and the measuring probes 6a and 6b are connected to the direct current power source 4 and the ammeter 5, respectively. The insulation resistance measuring device 2 detects a current flowing through the ammeter 5 while the probes 6a and 6b are in contact with the chip terminal of the multiple chip 1 to be inspected, and measures the insulation resistance through the detected current. do. In addition, the insulation resistance meter 2 of FIG. 2 may measure the capacitance between the probes 6a and 6b.

The probes 6a and 6b of the insulation resistance measuring instrument 2 are in contact with the chip terminals a and b of the multiple chip 1. In addition, the probe 7a connected to one end of the capacitor 3 is in contact with the other terminal c of the chip component having the chip terminal a, and the probe 7b connected to the other end of the capacitor 3 is a chip. The other terminal d of the chip component having the terminal b is contacted.

The capacitance (capacitance) of the condenser 3 is such that the insulation resistance meter 2 detects the contact of the probes 6a and 6b in order to make the application time of the voltage to the test object as short as possible when measuring the insulation resistance. It is recommended to set the minimum value possible (for example, about 2pF). In addition, the capacitor 3 is preferably formed of a material having high insulation and easy availability.

Next, the operation of the probe contact state detection apparatus shown in FIG. 2 will be described. When measuring the insulation resistance between the chip terminals a and b of the multiple chips 1, first, the probes 6a and 6b of the insulation resistance measuring instrument 2 are surely connected between the chip terminals a and b as the measurement target of the insulation resistance. It detects whether or not there is contact.

Specifically, while the probes 6a and 6b of the insulation resistance measuring device 2 are brought into contact with the chip terminals a and b, the capacitor 3 is connected to another chip terminal c of the chip component having the chip terminal a. The probe 7a connected to one end of the () is brought into contact with each other, and the probe 7b connected to the other end of the capacitor 3 is brought into contact with another chip terminal d of the chip component having the chip terminal b.

As a result, a closed circuit is formed by the insulation resistance measuring device 2 and the condenser 3 so that a current flows from the DC power supply 4 inside the insulation resistance measuring device 2 toward the condenser 3, and charges the condenser 3. Is charged.

In this state, the insulation resistance measuring instrument 2 measures the capacitance between the probes 6a and 6b and detects the contact state of the probes 6a and 6b according to the magnitude of the capacitance. Specifically, when the contact of the probes 6a and 6b to the chip terminals a and b is incomplete, the capacitance value measured by the insulation resistance measuring instrument 2 becomes small. Therefore, the insulation resistance measuring device 2 judges that the contact is good when the measured capacitance value is larger than the prescribed value, and determines that the contact is poor when it is small.

If it is determined that the contact is good, the insulation resistance is calculated according to the current value detected by the ammeter 5 as it is in the wiring state of FIG. The insulation resistance is calculated as (voltage of the DC power supply 4) / (current value detected by the ammeter 5).

As described above, in the present embodiment, when measuring the insulation resistance between the chip terminals of the multiple chips 1, the probe terminals 6a and 6b of the insulation resistance measuring device 2 are brought into contact with the chip terminals to be measured and the chip terminals as the measurement targets. Since the capacitance between the chip terminals to be measured is measured while the capacitors 3 are connected between the chip terminals on the other end side corresponding to, the contact state of the probes 6a and 6b can be measured with high accuracy according to the size of the capacitance. .

In addition, when it is judged that the contact state of the probes 6a and 6b is good, the insulation resistance between the chip terminals can be measured without removing the capacitor 3 connected to the other end. This eliminates unnecessary component cost savings and simplifies the measurement process.

2 illustrates an example in which the capacitor 3 is connected to the chip terminal of the other end of the chip terminal to be measured, but as shown in FIG. 4, the probes 6a and 6b and the capacitor 3 are connected to the same chip terminal. You may connect.

In the above embodiment, the multi-chip 1 in which a plurality of ferrite chips are embedded has been described as an example, but the present invention is applicable to various multi-chips 1, and the shape of the multi-chip 1 is also shown in FIG. It is not limited to this.

(2nd embodiment)

In the second embodiment, when the resistance is measured by bringing the probe into contact with both ends of the chip resistance, it is detected whether the probe is firmly in contact with the chip terminal.

Fig. 5 is a circuit diagram showing a second embodiment of the probe contact state detection device according to the present invention. The probe contact state detection device shown in FIG. 5 includes a capacitor 3 and a resistance meter 22 connected between the probes 7a and 7b and the probes 7a and 7b respectively contacting both ends of the chip resistor 21 to be measured. ).

The probes 22a and 22b of the resistance meter 22 are in contact with both ends of the chip resistor 21, respectively. In addition, the resistance measuring instrument 22 is provided with a DC voltage supply source 4 and an ammeter 5 connected in series. The resistance meter 22 can measure the capacitance (capacitance) between the probes 22a and 22b.

Next, the operation of the probe contact state detection apparatus shown in FIG. 5 will be described. First, the probes 7a, 7b, 22a and 22b are brought into contact with both chip terminals of the chip resistor 21 to be measured. In this state, it is detected whether the probes 22a and 22b of the resistance meter 22 are in firm contact with the corresponding chip terminal.

Specifically, the capacitance between the probes 22a and 22b is measured through the resistance measuring instrument 22, and the contact state of the probes 22a and 22b is detected according to the magnitude of the capacitance. When it is determined that the probes 22a and 22b are firmly in contact with the chip terminal, the resistance value of the chip resistor 21 is measured by the resistance meter 22.

As described above, in the second embodiment, it is determined through the capacitance between the probes 22a and 22b whether the probes 22a and 22b for resistance value measurement of the chip resistor 21 are firmly in contact with the chip terminals. The contact of 22b) can be detected simply and with high accuracy. Moreover, although this 2nd Embodiment is especially suitable for measuring a high resistance value, it is applicable also when measuring a low resistance value.

In the first and second embodiments described above, an example in which the probes 7a and 7b connected to the capacitor 3 are brought into contact with the chip terminals has been described. (3) may be connected.

According to the present invention, the capacitance between the first and second probes is measured while the capacitor is connected between the third and fourth chip terminals correlated with the first and second chip terminals, which are the measurement targets of the insulation resistance, and the measurement result is Therefore, since the contact state of the probe is detected, the contact state of the probe can be detected with high accuracy without being influenced by the capacitance of the chip component.

In addition, since the capacitor does not need to be removed even when the insulation resistance is measured after detecting the contact state of the probe, a changeover switch or the like is unnecessary, thereby reducing the number of parts.

Similarly, when measuring the resistance value of the chip resistance, the capacitance between the first and second probes is measured with the capacitor connected to both ends of the chip resistance, and the contact state of the probe is detected according to the measurement result. The contact state can be detected.

Claims (20)

Chips in which the first and second probes are in contact with each other by detecting a current flowing between the first and second probes that are in contact with each chip terminal of another chip part in a plurality of chip parts in which a plurality of chip parts are embedded. When detecting the insulation resistance between the terminals, the probe contact state detection method for detecting whether the contact between the first and second probes and the chip terminal to be measured of the insulation resistance is good, The first and second probes are brought into contact with the first and second chip terminals, which are the measurement target of the insulation resistance, respectively, and a capacitor is connected between the third and fourth chip terminals related to the first and second chip terminals. Measuring a capacitance between the first and second probes; And detecting whether the contact between the first and second probes and the corresponding first and second chip terminals is good according to the measured capacitance. The probe of claim 1, wherein one end of the capacitor is connected to another chip terminal of the chip component having the first chip terminal, and the other end of the capacitor is connected to another chip terminal of the chip component having the second chip terminal. Contact state detection method. The method of claim 1, wherein one end of the capacitor is connected to the first chip terminal, and the other end of the capacitor is connected to the second chip terminal. The method of claim 1, wherein the capacitor has a capacitance close to a minimum that can measure insulation resistance. The method of claim 1, wherein the detecting of whether the contact is good comprises determining that the contact is good when the measured capacitance between the first and second probes is larger than a prescribed value. The method of claim 1, wherein if it is determined that the contact is good by detecting whether the contact is good, based on a voltage applied between the first and second probes and a current flowing between the first and second probes, And a probe contact state detecting method for detecting insulation resistance between terminals of which the first and second probes are in contact. When detecting a current flowing between the first and second probes in contact with the first and second chip terminals of the chip resistance, and detecting the resistance value of the chip resistance through the current, the first and second probes and the Probe contact state detection method for detecting whether the contact between the first and second chip terminals is good, Measuring capacitance between the first and second probes while the first and second probes are in contact with each other, and a capacitor is connected between the first and second chip terminals, respectively. Wow, And detecting whether the contact between the first and second probes and the corresponding first and second chip terminals is good according to the measured capacitance. 8. The method of claim 7, wherein the capacitor has a capacitance close to a minimum that can measure insulation resistance. The method of claim 7, wherein detecting whether the contact is good comprises determining that the contact is good when the measured capacitance between the first and second probes is larger than a prescribed value. The method of claim 7, wherein if it is determined that the contact is good by detecting whether the contact is good, based on a voltage applied between the first and second probes and a current flowing between the first and second probes, A probe contact state detection method for detecting a resistance value between the first and second chip terminals. Detects a current flowing between the first and second probes that are in contact with each chip terminal of the other chip component in a plurality of chip parts in which a plurality of chip components are embedded, and through which the first and second probes are contacted. When detecting the insulation resistance between the chip terminals, the probe contact state detection device for detecting whether the contact between the first and second probes and the chip terminal to be measured the insulation resistance is good, The first and second probes are brought into contact with the first and second chip terminals, which are the measurement target of the insulation resistance, respectively, and a capacitor is connected between the third and fourth chip terminals related to the first and second chip terminals. Capacitance measurement means for measuring a capacitance between the first and second probes; And a contact detecting means for detecting whether contact between the first and second probes and the corresponding first and second chip terminals is good according to the measured capacitance. 12. The probe of claim 11, wherein one end of the capacitor is connected to another chip terminal of the chip component having the first chip terminal, and the other end of the capacitor is connected to another chip terminal of the chip component having the second chip terminal. Contact state detection device. 12. The probe contact state detection device of claim 11, wherein one end of the capacitor is connected to the first chip terminal, and the other end of the capacitor is connected to the second chip terminal. 12. The apparatus of claim 11, wherein the capacitor has a capacitance close to a minimum that can measure an insulation resistance. 12. The probe contact state detection device according to claim 11, wherein the contact detection means determines that the contact is good if the measured capacitance between the first and second probes is larger than a prescribed value. 12. The method of claim 11, wherein if the contact is determined to be good through the contact detecting means, the first and second probes are based on a voltage applied between the first and second probes and a current flowing between the first and second probes. 2. A probe contact state detection device further comprising insulation resistance detection means for detecting insulation resistance between chip terminals with which the probe is in contact. When detecting a current flowing between the first and second probes in contact with the first and second chip terminals of the chip resistance, and detecting the resistance value of the chip resistance through the current, the first and second probes and the Probe contact state detection device for detecting whether the contact between the first and second chip terminals is good, Capacitance measurement for measuring capacitance between the first and second probe terminals and the first and second probes, respectively, and connecting a capacitor between the first and second chip terminals, and measuring the capacitance between the first and second probe terminals. Sudan, And a contact detecting means for detecting whether a contact between the first and second probes and the first and second chip terminals corresponding to the first and second probes is good according to the measured capacitance. 18. The apparatus of claim 17, wherein the capacitor has a capacitance close to a minimum that can measure insulation resistance. 18. The probe contact state detection device according to claim 17, wherein the contact detection means determines that the contact is good if the measured capacitance between the first and second probes is larger than a prescribed value. 18. The method of claim 17, wherein if it is determined that the contact is good through the contact detecting means, the first and second probes are based on a voltage applied between the first and second probes and a current flowing between the first and second probes. And a resistance detecting means for detecting a resistance value between the second chip terminals.