KR20000073503A - coating method of photoresist - Google Patents

coating method of photoresist Download PDF

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Publication number
KR20000073503A
KR20000073503A KR1019990016821A KR19990016821A KR20000073503A KR 20000073503 A KR20000073503 A KR 20000073503A KR 1019990016821 A KR1019990016821 A KR 1019990016821A KR 19990016821 A KR19990016821 A KR 19990016821A KR 20000073503 A KR20000073503 A KR 20000073503A
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KR
South Korea
Prior art keywords
wafer
photoresist
reflective
coating method
photosensitive film
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KR1019990016821A
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Korean (ko)
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이병철
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황인길
아남반도체 주식회사
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Priority to KR1019990016821A priority Critical patent/KR20000073503A/en
Publication of KR20000073503A publication Critical patent/KR20000073503A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0025—Devices or apparatus characterised by means for coating the developer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A coating method of photosensitive film is provided, which forms the photosensitive film to drop photosensitive solution for antireflective coating on the wafer in the condition of stopping the wafer. Therefore, it prevents damage of board at the etching plasma by minimizing the formation of bubble that is generated by mixing photosensitive solution and air by the change of the air current. CONSTITUTION: The coating method contains the steps of; (1) dropping photosensitive solution for antireflective coating on the wafer in the condition of stopping the wafer; and (2) rotating the wafer after spraying the photosensitive solution for antireflective coating on the surface of the wafer.

Description

감광막 도포 방법{coating method of photoresist}Photosensitive film coating method {coating method of photoresist}

본 발명은 감광막 도포 방법에 관한 것으로써 더욱 상세하게는, 반사 방지용 감광막(BARC ; bottom anti-reflective coating)을 도포하는 감광막 도포 방법에 관한 것이다.The present invention relates to a photoresist coating method, and more particularly, to a photoresist coating method for applying a bottom anti-reflective coating (BARC).

집적 회로를 만드는데 있어서 박막 또는 배선을 형성하기 위해서는 포토리소그래피(photolithography) 공정을 실시하게 되는데, 이는 실리콘 웨이퍼의 깨끗한 표면 위에 감광막을 도포한 후 베이크(bake)시키고, 선택적으로 빛을 투과시킬 수 있는 마스크를 이용한 노광 및 현상 공정으로 감광막 패턴을 형성하는 것을 의미한다.In forming an integrated circuit, a photolithography process is performed to form a thin film or a wiring, which is a mask capable of baking a photosensitive film on a clean surface of a silicon wafer and then baking it and selectively transmitting light. It means forming a photosensitive film pattern by an exposure and development process using.

일반적으로 트랜지스터의 게이트, 소스, 드레인은 도핑된 다결정 규소 또는 금속 따위의 도전 물질을 이용하여 형성한다. 하나의 예로 다결정 규소를 이용하여 게이트를 형성하는 방법으로는, 실리콘 웨이퍼에 다결정 규소를 증착하고, 그 위에 감광막을 도포하고 노광 현상 공정을 통해 게이트용 감광막 패턴을 형성한다.In general, the gate, source, and drain of a transistor are formed using a conductive material such as doped polycrystalline silicon or metal. In one example, a method of forming a gate using polycrystalline silicon is to deposit polycrystalline silicon on a silicon wafer, apply a photosensitive film thereon, and form a gate photosensitive film pattern through an exposure developing process.

그러나, 다결정 규소 위에 감광막을 도포하고 마스크를 통해 노광하는 공정에서 빛이 조사되지 않아야 할 부분에 반사에 의한 빛의 일부가 조사되므로 현상한 후에 톱니 바퀴 등의 모양을 가지는 비정상적인 감광막 패턴이 형성된다. 결국, 이러한 감광막 패턴을 마스크로 하여 형성되는 게이트는 정확한 모양으로 형성될 수 없게 된다.However, in the process of applying the photoresist film on the polycrystalline silicon and exposing through the mask, part of the light due to the reflection is irradiated to the portion where the light should not be irradiated, so that after development, an abnormal photoresist pattern having a shape such as a cog wheel is formed. As a result, the gate formed using this photosensitive film pattern as a mask cannot be formed in an accurate shape.

이러한 문제를 해결하기 위해 감광막을 도포하기 전에 반사 방지용 감광막을 도포하는데, 이러한 반사 방지용 감광막은 검은색의 염료 성분이 첨가되어 있어 기판으로부터의 반사를 없애고 조사되는 빛을 최대로 흡수한다.In order to solve this problem, an anti-reflective photoresist is applied before the photoresist is applied. The anti-reflective photoresist has a black dye component added thereto to eliminate reflection from the substrate and to maximize the absorption of irradiated light.

이러한 반사 방지용 감광막을 웨이퍼에 도포하는데 있어서 스핀 코팅(spin coating) 방법을 이용하는데, 회전하는 웨이퍼의 상부에 감광액을 떨어뜨려 원심력에 의해 기판의 전면에 퍼지도록 하여 감광막을 도포하는 방법이다.In applying the anti-reflection photosensitive film to the wafer, a spin coating method is used. The photosensitive film is applied by dropping the photosensitive liquid on the top of the rotating wafer and spreading it over the entire surface of the substrate by centrifugal force.

그러나 반사 방지용 감광막을 형성하기 위해 반사 방지 감광액을 떨어뜨리는 순간에 웨이퍼가 회전하는 상태이므로 회전에 의해 생성되는 공기 흐름의 변화로 인해 반사 방지용 감광액과 주변 공기가 뒤섞이게 되어 반사 방지용 감광막에는 기포가 형성된다. 이러한 기포는 감광막을 베이크하는 과정에서 빈 공간(pit)으로 남게 되며 감광막 패턴을 마스크로 하여 식각하는 공정이 끝나게 되면 기판을 손상시키는 원인으로 작용한다. 즉, 게이트를 형성하기 위해 감광막 패턴을 마스크로 하여 플라즈마 건식 식각으로 반사 방지용 감광막과 다결정 규소층을 차례로 식각하는데, 반사 방지용 감광막 내에 빈 공간이 있게 되면, 반사 방지용 감광막을 식각하는 동안 다결정 규소층은 식각되어 손상되며 다결정 규소가 식각될 때 기판의 상부가 식각되어 손상을 입는다.However, since the wafer rotates at the moment of dropping the anti-reflective photoresist to form the anti-reflective photoresist, the anti-reflective photoresist and the surrounding air are mixed due to the change of air flow generated by the rotation, thereby forming bubbles in the anti-reflective photoresist. do. Such bubbles remain as a pit in the process of baking the photoresist film, and when the etching process is completed using the photoresist pattern as a mask, it causes damage to the substrate. That is, in order to form a gate, the anti-reflective photoresist and the polycrystalline silicon layer are sequentially etched by plasma dry etching using the photoresist pattern as a mask. When there is an empty space in the anti-reflective photoresist, the polycrystalline silicon layer is etched during the etching of the antireflective photoresist. When the polycrystalline silicon is etched and damaged, the upper portion of the substrate is etched and damaged.

본 발명이 이루고자 하는 기술적 과제는 반사 방지용 감광막을 도포할 때 발생하는 기포를 최소화하여 기판이 손상되는 것을 방지하기 위한 감광막 도포 방법을 제공하는 것이다.The technical problem to be achieved by the present invention is to provide a photosensitive film coating method for preventing damage to the substrate by minimizing bubbles generated when applying the anti-reflection photosensitive film.

도 1은 본 발명의 실시예에 따른 반사 방지용 감광막 도포 방법을 공정 순서에 따라 도시한 순서도이고,1 is a flowchart illustrating a method of applying an anti-reflection photosensitive film according to an embodiment of the present invention according to a process sequence;

도 2는 본 발명의 실시예에 따른 반사 방지용 감광막 도포 방법을 도시한 평면도이다.2 is a plan view illustrating a method of applying an anti-reflection photosensitive film according to an embodiment of the present invention.

이러한 과제를 달성하기 위하여 본 발명에서는 반사 방지용 감광막을 도포할 때 웨이퍼를 정지시킨 상태에서 반사 방지용 감광액을 떨어뜨린 후 회전시켜 감광막을 도포한다.In order to achieve the above object, in the present invention, when the anti-reflection photosensitive film is applied, the anti-reflective photoresist is dropped while rotating the wafer to apply the photosensitive film.

본 발명에 따르면, 반사 방지용 감광막 도포 방법은 웨이퍼를 정지시킨 상태에서 반사 방지용 감광액을 떨어뜨리고, 반사 방지용 감광액이 웨이퍼 표면적의 80%-90%, 바람직하게는 90% 이상 퍼질 때 웨이퍼를 회전시켜 도포한다.According to the present invention, the anti-reflective photoresist coating method is applied by dropping the anti-reflective photoresist in a state in which the wafer is stopped, and rotating the wafer when the anti-reflective photoresist is spread at 80% -90%, preferably 90% or more of the wafer surface area. do.

위와 같이 반사 방지용 감광막을 도포하여 게이트를 형성함에 있어서, 반사 방지용 감광액을 웨이퍼를 정지시킨 상태에서 떨어뜨리고, 반사 방지용 감광액이 웨이퍼 표면적에 80%-90%, 바람직하게는 90% 이상 퍼질 때까지 웨이퍼를 회전시키지 않으면, 반사 방지용 감광액은 주변 공기와 뒤섞이지 않게 된다.In forming the gate by applying the anti-reflective photoresist film as above, the anti-reflective photoresist is dropped while the wafer is stopped, and the wafer until the anti-reflective photoresist spreads 80% to 90%, preferably 90% or more to the wafer surface area. If it is not rotated, the anti-reflective photoresist is not mixed with the surrounding air.

그러면, 첨부한 도면을 참조하여 본 발명에 따른 반사 방지용 감광막 도포 방법의 한 실시예에 대하여 본 발명이 속하는 기술 분야에서 통상의 기술을 가진 자가 용이하게 실시할 수 있을 정도로 상세히 설명한다.Then, with reference to the accompanying drawings will be described in detail such that an embodiment of the anti-reflection photosensitive film coating method according to the present invention can be easily carried out by those of ordinary skill in the art.

도 1은 본 발명의 실시예에 따른 반사 방지용 감광막 도포 방법을 공정 순서에 따라 도시한 순서도이고, 도 2는 본 발명의 실시예에 따른 반사 방지용 감광막 도포 방법을 도시한 평면도이다.1 is a flowchart illustrating a method of applying an anti-reflection photosensitive film according to an embodiment of the present invention according to a process sequence, and FIG. 2 is a plan view of a method of applying an anti-reflection photosensitive film according to an embodiment of the present invention.

도포할 웨이퍼를 웨이퍼 홀더에 장착하고 처음에 홀더를 회전시키지 않고 웨이퍼를 정지 상태로 한다(S11). 웨이퍼를 정지시킨 상태에서 반사 방지용 감광액을 웨이퍼 중앙(C)에 떨어뜨린다(S12). 이 때, 웨이퍼를 정지시킨 상태에서 반사 방지용 감광액을 떨어뜨리므로 반사 방지용 감광액은 주변 공기와 섞이지 않게 되어 도포된 반사 방지용 감광막에는 기포가 형성되지 않는다. 웨이퍼 위에 떨어진 반사 방지용 감광액은 도 2에서 보는 바와 같이 방사 모양으로 퍼지게 된다. 웨이퍼(A)는 반사 방지용 감광액이 웨이퍼 표면적에 80%-90%, 바람직하게는 90% 이상 퍼질 때(B)까지 정지시킨 상태로 둔다. 이 때, 반사 방지용 감광액이 웨이퍼 표면적의 90% 정도를 넘어 웨이퍼 전면에 퍼진 후 웨이퍼를 회전시키는 경우에는 반사 방지용 감광액이 경화되어 반사 방지용 감광막을 도포할 수 없으므로 웨이퍼 전면에 퍼지지 않도록 한다. 이 때, 웨이퍼를 회전시키는 시기는 웨이퍼 크기마다 다를 수 있다. 반사 방지용 감광액이 웨이퍼 표면적에 90% 이상 퍼지면 웨이퍼(A)를 회전시켜(S13) 도포를 완료한다(S14).The wafer to be coated is mounted on a wafer holder, and the wafer is initially stopped without rotating the holder (S11). In the state in which the wafer is stopped, the anti-reflection photosensitive liquid is dropped on the center C of the wafer (S12). At this time, since the anti-reflective photoresist is dropped while the wafer is stopped, the anti-reflective photoresist is not mixed with the surrounding air so that no bubbles are formed in the applied antireflective photoresist film. The anti-reflective photoresist dropped on the wafer spreads radially as shown in FIG. 2. The wafer A is left in a stopped state until the anti-reflection photosensitive liquid spreads 80% to 90%, preferably 90% or more, to the wafer surface area. At this time, when the anti-reflective photoresist spreads over the wafer surface by more than 90% of the wafer surface area and rotates the wafer, the anti-reflective photoresist is hardened and the anti-reflective photoresist film cannot be applied, so that the antireflective photoresist is not spread over the entire wafer surface. At this time, the timing of rotating the wafer may be different for each wafer size. When the anti-reflection photosensitive liquid spreads 90% or more on the wafer surface area, the wafer A is rotated (S13) to complete the application (S14).

이와 같이 본 발명에서는 반사 방지용 감광막을 도포할 때 웨이퍼를 정지시킨 상태에서 반사 방지용 감광액을 웨이퍼에 떨어뜨려 감광막을 형성함으로써, 회전에 의한 공기 흐름의 변화로 반사 방지용 감광액과 공기가 뒤섞여 나타나는 기포의 형성을 최소화하여 플라즈마 식각 시 기판의 손상을 방지한다.As described above, in the present invention, when the anti-reflective photosensitive film is applied, the anti-reflective photosensitive liquid is dropped onto the wafer to form a photosensitive film while the wafer is stopped, thereby forming bubbles formed by mixing the anti-reflective photosensitive liquid with air due to a change in air flow due to rotation. Minimized to prevent damage to the substrate during plasma etching.

Claims (3)

웨이퍼를 정지시킨 상태에서 반사 방지용 감광액을 떨어뜨리는 단계,Dropping the anti-reflection photosensitive liquid while the wafer is stopped; 상기 반사 방지용 감광액이 상기 웨이퍼 표면에 퍼진 후 웨이퍼를 회전시키는 단계Rotating the wafer after the anti-reflective photoresist is spread on the wafer surface 를 포함하는 반사 방지용 감광막 도포 방법.Anti-reflection photosensitive film coating method comprising a. 제 1항에서,In claim 1, 상기 웨이퍼 회전 단계는 상기 반사 방지용 감광액이 상기 웨이퍼의 표면적에 80%-90% 이상 퍼질 때 실시하는 것을 포함하는 반사 방지용 감광막 도포 방법.The wafer rotating step is the anti-reflection photosensitive film coating method comprising the step of performing when the anti-reflective photosensitive liquid is spread more than 80% -90% to the surface area of the wafer. 제 1항에서,In claim 1, 상기 웨이퍼 회전 단계는 상기 반사 방지용 감광액이 상기 웨이퍼의 표면적에 90% 이상 퍼질 때 실시하는 것을 포함하는 반사 방지용 감광막 도포 방법.The wafer rotating step is the anti-reflective photoresist coating method comprising the step of performing when the anti-reflective photosensitive liquid is more than 90% spread over the surface area of the wafer.
KR1019990016821A 1999-05-11 1999-05-11 coating method of photoresist KR20000073503A (en)

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