KR20000065866A - Method for fabricating a reflective type active matrix substrate cell - Google Patents

Abstract

PURPOSE: A method for manufacturing a reflection type active matrix substrate cell is provided to maintain uniformly the luminance of a reflective beam by forming a concavo-convex face on a reflective layer. CONSTITUTION: A method for manufacturing a reflection type active matrix substrate cell comprises the steps of: forming a gate electrode layer(2) and a gate insulating layer(3) on a base plate(1); forming an active pattern(4) on the gate insulating layer corresponding to the gate electrode layer; forming a source and a drain electrode layer(5,6) on the gate insulating layer and patterning the source and the drain electrode layers to expose a channel part of the active layer and a part of the gate insulating layer; forming a passivation layer(7) on the gate insulating layer; patterning the passivation layer to expose a part of the drain electrode layer and forming a reflective layer(8) on the passivation layer; forming a concavo-convex face on a predetermined area of the reflective layer and covering a metal oxide layer between the concavo-convex face.

Description

Method for fabricating a reflective type active matrix substrate cell

The present invention relates to a reflective active matrix substrate cell used in, for example, a reflective liquid crystal display device, and more particularly, by forming irregularities in the reflective film itself, regardless of the structure of the organic film that is the base of the reflective film, to emit light to the outside. The present invention relates to a method of manufacturing a reflective active matrix substrate cell that enables uniformly maintained luminance of reflected light.

In general, a reflective liquid crystal display device uses another kind of metal having high reflectance as a common electrode instead of indium tin oxide (ITO) to reflect light incident from the outside, for example, natural light, and back light through the reflected light. It refers to a liquid crystal display device that can display image information on a liquid crystal panel without an assembly.

Since the above-described reflective liquid crystal display device does not use a backlight, there are many advantages of lighter, thinner, and lower power consumption than the transmissive liquid crystal display device. have.

The general shape or structure of such a reflective liquid crystal display is described in, for example, US Patent No. 5408344, "Reflection type liquid crystal display with selective reflecting means", US Patent No. 5724111 "Reflective LCD having a light scattering means formed on an electrode side surface of a counter substrate" and the like.

However, since the reflective liquid crystal display device does not use an internal light source such as a backlight, the power consumption is low, while the luminance of reflected light is 10 times lower than that of the transmissive liquid crystal display device. have. This disadvantage is more prominent in dark places. In this case, the displayed image becomes very dark, and as a result, the overall image quality is significantly reduced.

In the conventional case, in order to solve this problem, an organic film such as a pattern resin formed on an active matrix substrate is patterned to form an uneven surface that is curved at regular intervals on the surface of the organic film, and then the uneven surface is predetermined. By reflowing through the heating process and depositing a reflective film on top of the uneven surface, a method is finally devised so that the finally completed reflective film has an uneven shape curved at regular intervals based on the organic film. have. In this case, the luminance of the reflected light finally output is greatly improved due to the action of the unevenness formed on the reflective film.

Such a "method of forming the irregularities of the reflective film" is described in, for example, US Patent Publication No. 5204765 "Liquid crystal display device having a reflector of a substrate, a pattern resin and a reflective film, and a manufacturing method thereof. resin, and a reflective film, and method of making same), U.S. Patent No. 5220444, "Reflective liquid crystal display device having an oxide film etched between a substrate and a metal film and a method of manufacturing the same. with etched oxide layer between substrate and metal film and method for producing same).

As described above, the conventional reflective liquid crystal display device has a disadvantage in that the luminance of reflected light is 10 times lower than that of the transmissive liquid crystal display device unless special measures are taken.

By the way, in order to overcome this disadvantage, as described in the above-mentioned "US Patent Publication No. 5204765", "US Patent Publication No. 5220444" and the like, for example, to form a concave-convex surface bent at a predetermined interval on the surface of the organic film or the like. On the basis of this uneven surface, if the reflective film has an uneven shape, although the luminance of the reflected light finally output can be improved, in this case, some unexpected problems occur.

For example, the above-described organic film exhibits a very large uniformity deviation depending on the occupied position in the active matrix substrate due to its physical properties. As described above with the organic film having such a characteristic, the patterning process is performed, and the uneven shape is obtained. In this case, the luminance of the reflected light can be improved, but in proportion to this, the uniformity deviation of the organic film becomes more severe. In this state, when the reflective film is formed on the organic film, the reflective film formed on the organic matrix is also occupied in the active matrix substrate. Depending on the location, there is a very large difference in reflectance.

In addition, in order to realize the above-mentioned concave-convex shape, when the reflow process is performed on the organic film, the organic film exhibits very poor pattern reproducibility due to its physical properties, and in this case, the reflective film formed on the organic film Depending on the occupied position in the active matrix substrate, there is a very large difference in reflectance.

According to each of these problems, the luminance of the reflected light finally output has a very nonuniform characteristic.

On the other hand, in the conventional case, the reflective film is positioned on the outermost surface of the active matrix substrate in contact with the liquid crystal in a state where the above-mentioned uneven surface is formed. An unstable arrangement results, resulting in an unexpected contrast failure.

In addition, when the reflective film is located on the outermost surface of the active matrix substrate, the reflective film has a structure facing the ITO electrode of the color filter substrate. In this case, the reflective film is electrically contacted with the ITO electrode of the color filter substrate. In the end, between the color filter substrate and the active matrix substrate, it causes an unexpected short defect.

According to each of these problems, the function of the finally completed reflection type liquid crystal display device is significantly reduced.

Accordingly, an object of the present invention is to form a plurality of uneven surfaces on the reflective film itself instead of forming an uneven surface on the organic film that is the base of the reflective film, and to maintain the flat shape, so that the reflective film covers the entire area of the active matrix substrate. To provide even reflectance.

Another object of the present invention is to maintain the luminance of the reflected light finally output by maintaining the reflectance of the reflective film evenly.

Still another object of the present invention is to form a thin oxide film inside the uneven curved portion of the reflective film on which the uneven surface is formed, thereby flattening the reflective film, thereby making the liquid crystal in contact with the reflective film more stable without affecting the uneven structure of the reflective film. The purpose is to maintain the array state.

Still another object of the present invention is to stably secure the arrangement of liquid crystals, thereby preventing unexpected contrast defects in advance.

Still another object of the present invention is to prevent unexpected short defects by blocking electrical contact between the reflective film and the ITO electrode on the color filter substrate through the oxide film formed on the surface of the reflective film.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

1A through 1E are cross-sectional process diagrams sequentially illustrating a method of manufacturing a reflective active matrix substrate cell in accordance with one embodiment of the present invention.

2A through 2E are cross-sectional process diagrams sequentially illustrating a method of manufacturing a reflective active matrix substrate cell according to another embodiment of the present invention.

3A to 3E are cross-sectional process diagrams sequentially illustrating a method of manufacturing a reflective active matrix substrate cell according to another embodiment of the present invention.

In order to achieve the above object, the present invention proceeds differently from the conventional method of forming the irregularities on the reflective film, for example, on the organic film or the like, which is the base of the reflective film, instead of maintaining the flat shape, A plurality of uneven surfaces are formed in the reflective film formed thereon. In this case, in the production line, for example, an anodizing process is performed to form irregularities having a plurality of curved surfaces on the surface of the reflective film, and a metal oxide film is formed on the curved surfaces between the irregularities.

When the present invention is achieved, the reflective film can have a large number of curved surfaces on its surface without relying on the organic film having poor process characteristics, thereby maintaining an even reflectance throughout its entire area. As a result, it is possible to provide the effect that the luminance of the reflected light finally output becomes uniform.

At this time, preferably, the production line is further subjected to one anodization process to coat a thin insulating oxide film on the surface of the reflective film. Such an insulating oxide film provides the effect of flattening the reflective film without affecting the concave-convex structure of the reflective film. As a result, the liquid crystal in contact with the reflective film can be induced to maintain a more stable arrangement. In addition, the insulating oxide film provides an insulation effect together with the above-described flattening effect, thereby providing an effect of blocking electrical contact between the reflective film and the ITO electrode on the color filter substrate, thereby preventing the reflection film and the ITO electrode from shorting in advance. You can prevent it.

On the other hand, in another embodiment, in the present invention, the organic film is completely removed in the active matrix substrate, and when the gate electrode layer or the source / drain electrode is formed, a reflective film is formed at the same time, and the uneven surface is formed on the reflective film itself.

When such another example of the present invention is achieved, the reflective film can retain a large number of curved surfaces on its surface, without relying on the organic film having poor process characteristics, as in the case described above. It is possible to maintain an even reflectance over the region, and, in turn, provide an effect of making the luminance of the reflected light finally output uniform.

In addition, in another example of the present invention, the production line can reduce the process of forming the organic film, and the reflective film can be formed at the same time as the gate electrode layer or the source / drain electrode layer, thereby greatly reducing the overall number of steps. Can be obtained.

Hereinafter, a method of manufacturing a reflective active matrix substrate cell according to the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIG. 1A, first, in a production line, for example, a sputtering process is performed to sequentially deposit a metal layer such as Al-Nd, Mo, etc. on the base plate 1, and then use a mask. The etching process is performed to finely etch the formed Al-Nd and Mo metal layers, thereby forming the gate electrode layer 2 having a lamination structure of "Al-Nd / Mo", for example. Of course, the gate electrode layer 2 may be formed in a single layer structure using a metal such as Al, Al alloy, Ta, W, Cr, MoW, Mo, or the like.

Subsequently, in the production line, for example, SiN _X is deposited on the base plate 1 including the gate electrode layer 2 to form the gate insulating layer 3. Such a gate insulating layer 3 is formed by, for example, PECVD.

Subsequently, on the gate insulating layer 3 corresponding to the gate electrode layer 2, for example, a semiconductor layer 4a made of amorphous silicon and an impurity layer 4b made of N ⁺ -amorphous silicon are sequentially deposited. do. Such a semiconductor layer 4a, an impurity layer 4b, and the like are formed by, for example, PECVD deposition.

Subsequently, a photolithography process using a mask is performed, and both sides of the semiconductor layer 4a and the impurity layer 4b are finely patterned so that a part of the gate insulating layer 3 is exposed, thereby providing the semiconductor layer 4a and the impurity. The active pattern 4 having a structure in which the layers 4b are sequentially stacked is formed.

Subsequently, as shown in FIG. 1B, the source and drain electrode layers 5 and 6 made of, for example, Cr / Al double layers on the gate insulating layer 3 so that the active pattern 4 is covered in the production line. Are deposited sequentially. At this time, the source and drain electrode layers 5 and 6 are formed by, for example, a sputtering deposition method.

Subsequently, a photolithography process using a mask is performed to pattern a portion of the source and drain electrode layers 5 and 6 to form part of the impurity layer 4b constituting the active pattern 4 and the gate insulating layer 3. Allow some of the to be exposed.

Subsequently, the patterned source and drain electrode layers 5 and 6 are used as etching masks, for example, by performing a plasma etching process, thereby removing a part of the impurity layer 4b formed on the semiconductor layer 4a. The channel portion of the semiconductor layer 4a is exposed. Thus, the etch back structure as shown in the figure is completed.

Next, as shown in FIG. 1C, a passivation film of an organic material having, for example, a dielectric constant of a predetermined size on the gate insulating layer 3 so that the source and drain electrode layers 5 and 6 are covered in the production line. 7) form. This passivation film 7 is formed by, for example, PECVD deposition.

Subsequently, by performing a photolithography process using a mask and finely patterning a part of the passivation film 7, a part of the above-described source and drain electrode layers 5 and 6, for example, the drain electrode layer 6 is passivated. Expose to the outside of (7).

Subsequently, the reflective film 8 is deposited on the passivation film 7 by, for example, a sputtering method so as to be in electrical contact with the drain electrode layer 6, and then subjected to a photolithography process using a mask to form a part of the reflective film 8. By finely patterning, a part of the passivation film 7 corresponding to the active pattern 4 side is exposed to the outside. At this time, the reflective film 8 of the present invention is made of a metal having a high reflectance, for example, any one metal selected from the group consisting of Al-based metals or Ta-based metals. In one example, the reflective film 8 of the present invention is made of Al metal.

Subsequently, in the production line, after the photoresist film 100 having a predetermined pattern shape is formed on the reflective film 8, the " gate electrode layer 2 / gate insulating layer 3 / active pattern 4 / source " The reflective film forming the outermost part of the base plate 1 by transferring the base plate 1 in which the drain electrode layers 5, 6 / passivation film 7 / reflective film 8 " 8) Be prepared to proceed with this series of anodization processes.

At this time, the photoresist film 100 formed on the reflective film 8 covers the entire surface of the reflective film 8 corresponding to the active pattern 4 side, and blocks the active pattern 4 embedded in the lower layer of the photoresist film 100. Protect (4) from being affected by the subsequent anodization process. In this case, in the production line, the pattern size of the remaining photoresist film 100 except for the active pattern 4 is designed in a predetermined shape, so that the "concave-convex shape, depth of concavities and convexities", etc. of the final reflective film 8 are appropriately leveled. Adjust with

Subsequently, in the production line, a series of anodization reactions are performed to the reflective film 8 disposed on the outermost side of the base plate 1 by immersing the base plate 1 having the above-described layers formed in the electrolytic solution tank of the anodizing device. Let's do it. In this case, the oxygen component of the electrolyte filled with the electrolyte tank, for example, sulfuric acid solution, oxidizes a part of the reflective film 8 except for the surface covered by the photoresist film 100, and as shown in FIG. 1D, the reflective film 8 In addition to forming the unevennesses 8a having a plurality of curved surfaces on the surface of the c), a metal oxide film 9 is formed between the curved surfaces.

Here, as described above, the reflective film 8 of the present invention is composed of Al-based metals or Ta-based metals, and since such metals are known to be very suitable materials for anodizing, the above-described anodizing process in a production line Can proceed smoothly without any problems.

At this time, if the above-described reflective film 8 is made of Al metal, the metal oxide film 9 to be formed is a component of Al ₂ O ₃ .

Such anodization process is presented in more detail, for example, in Korean Patent Publication No. 90-6615 "High Hardness Anodizing Film Treatment Method and Apparatus of Aluminum Alloy Material".

When all of the anodization processes of the present invention are completed, the reflective film 8 is composed of "a combination of the irregularities 8a having a plurality of curved surfaces and the metal oxide film 9 filling the curved surfaces".

As described above, in the present invention, the method of forming the unevenness in the reflective film 8 proceeds differently from the conventional method, so that the organic film, for example, the passivation film 7, which is the base of the reflective film 8 is maintained instead of a flat shape. The reflective film 8 formed thereon is provided with a plurality of irregularities 8a through the above-described anodization process.

When the present invention is achieved, the reflective film 8 can retain a large number of curved surfaces on its surface, without relying on an organic film having poor process characteristics, unlike the prior art, and thus, the entire area of its reflection. It is possible to maintain an even reflectance over and, as a result, to provide an effect of making the luminance of the reflected light finally output uniform.

On the other hand, in the production line, after first performing the above-described anodization process, all the photoresist film 100 disposed on the reflective film 8 is removed, and the base plate 1 is once again replaced by the anodizing device. By immersion in the electrolytic bath, a series of anodization reactions can be carried out again to the reflective film 8 arranged at the outermost part of the base plate 1.

In this case, the oxygen component of the sulfuric acid solution filled with the electrolyte tank is oxidized by the above-mentioned unevenness 8a and the metal oxide film 9 formed on the reflective film 8 through the above-described anodization reaction, as shown in FIG. Similarly, an insulating oxide film 10 having a very thin thickness is further formed on top of the unevennesses 8a and the metal oxide film 9.

The insulating oxide film 10 provides the effect that the reflective film 8 is planarized without affecting the concave-convex structure of the reflective film 8, so that the liquid crystal (not shown) in contact with the reflective film 8 It can be induced to maintain a more stable arrangement.

In addition, the insulating oxide film 10 provides an insulating effect together with the above-described flattening effect, thereby providing an effect of blocking electrical contact between the reflective film 8 and the ITO electrode on the color filter substrate. The problem that the ITO electrode of the color filter substrate is shorted can be prevented in advance.

Meanwhile, FIGS. 2A to 2E and 3A to 3E illustrate a method of manufacturing a reflective active matrix substrate cell according to another embodiment of the present invention. According to another exemplary embodiment of the present invention, the above-described organic film, for example, the passivation film 7, is completely removed in the active matrix substrate cell, and the reflective film 8 is removed from the gate electrode layer 2 or the source drain. Forming simultaneously with the electrode layers 5, 6 provides the effect of greatly reducing the overall process level.

First, the case where the above-mentioned reflective film 8 is formed simultaneously with the gate electrode layer 2 will be described.

First, as illustrated in FIG. 2A, in a production line, for example, a sputtering process is performed to deposit, for example, a “Ta-based or Al-based metal layer” on the base plate 1, and then use a mask for photolithography. The process is carried out to form a gate electrode layer 2 and a reflective film 8 which are electrically separated from each other on the base plate 1 by precisely etching the previously formed "Ta-based or Al-based" metal layer.

At this time, the metal layer of "Ta-based or Al-based" constituting the reflective film 8 is a material that is highly suitable for anodization while having a high reflectivity as described above. 8) can be formed smoothly the uneven structure required for itself. Of course, this "Ta-based or Al-based" metal layer also retains electrical conductivity of a certain level or more, and thus can exhibit excellent characteristics as a material of the gate electrode layer 2.

Subsequently, in the production line, for example, a PECVD process is performed to form, for example, a SiN _X layer on the base plate 1 including the gate electrode layer 2 and the reflecting film 8, and then a photolithography process using a mask. By proceeding to remove a part of the SiN _X layer, the gate insulating layer 3 is formed on the gate electrode layer 2 except for the reflective film 8.

Subsequently, as illustrated in FIG. 2B, the semiconductor layer 4a and the impurity layer 4b are sequentially deposited on the gate insulating layer 3 corresponding to the gate electrode layer 2, and then photographed using a mask. The etching process is performed to pattern both sides of the semiconductor layer 4a and the impurity layer 4b so that a part of the gate insulating layer 3 is exposed, so that the semiconductor layer 4a and the impurity layer 4b are sequentially formed. The active pattern 4 of the laminated structure is formed.

Subsequently, in the production line, for example, the source and drain electrode layers 5 and 6 are deposited on the gate insulating layer 3 so that the active pattern 4 is covered, and then a photolithography process using a mask is performed. Patterning a portion of the source and drain electrode layers 5 and 6 to expose a portion of the impurity layer 4b constituting the active pattern 4 and a portion of the reflective film 8 disposed on the side of the gate insulating layer; In addition, the side portions of the source and drain electrode layers 5 and 6 are brought into contact with the reflective film 8 so that the source and drain electrode layers 5 and 6 and the reflective film 8 can form a series of energizing relationships.

Subsequently, by using the patterned source and drain electrode layers 5 and 6 as an etching mask, a part of the impurity layer 4b formed on the semiconductor layer is removed to expose the channel portion of the semiconductor layer 4a. Complete the etch back structure as shown.

Subsequently, in the production line, as shown in Fig. 2C, after forming the photoresist film 100 having a predetermined pattern on the source and drain electrode layers 5 and 6 and the reflective film 8, the " gate electrode layer " (2) and reflective film (8) / gate insulating layer (3) / active pattern (4) / source / drain electrode layers (5,6) " By transporting, the reflective film 8 exposed to the surface of the base plate 1 can be prepared to undergo a series of anodization processes.

In this case, in the production line, the pattern size of the remaining photoresist film 100 except for the active pattern 4 is designed in a predetermined shape, so that the "concave-convex shape, depth of concavities and convexities", etc. of the final reflective film 8 are appropriately leveled. Adjust with

Subsequently, in the production line, the base plate 1 on which the above-mentioned layers are formed is immersed in the electrolytic solution tank of the anodizing apparatus, thereby performing a series of anodizing reactions to the above-described reflective film 8. In this case, the oxygen component of the sulfuric acid solution filling the electrolyte tank oxidizes a part of the reflective film 8 except the surface covered by the photoresist film 100, and as shown in FIG. 2D, the surface of the reflective film 8 In addition to forming the irregularities 8a having a plurality of curved surfaces, a metal oxide film 9 is formed between the curved surfaces.

When all of the above anodization processes are completed, the reflective film 8 according to another embodiment of the present invention is similar to the above-described embodiment, "unevenness 8a having a plurality of curved surfaces and a metal filling the curved surface. Combination of the oxide films 9 ".

When such another embodiment of the present invention is achieved, the reflective film 8 can have a plurality of curved surfaces on its surface, without relying on the organic film having poor process characteristics, as in the above-described embodiment. Accordingly, it is possible to maintain an even reflectance over its entire area, and, as a result, to provide an effect of making the luminance of the reflected light finally output uniform.

In particular, in another embodiment of the present invention, as described above, in the overall configuration of the active matrix substrate cell, by eliminating the formation of the organic film, for example, the passivation film, the process of forming the organic film can be reduced, as well as the reflective film. By forming (8) at the same time as the gate electrode layer 2, it is possible to provide the effect that the overall number of process steps is greatly reduced.

Of course, in the above-described other embodiments of the present invention, like the above-described embodiment, the secondary anodization process may be further advanced after the primary anodization process.

In this case, as shown in FIG. 2E, an insulating oxide film 10 having a very thin thickness is further formed on top of the unevennesses 8a and the metal oxide film 9, and this insulating oxide film is formed in the same manner as in the above-described embodiment. It is possible to provide the effect of "stable arrangement of the liquid crystal" and "blocking contact of the reflective film with the ITO electrode" without affecting the uneven structure of the reflective film 8.

Secondly, the case where the above-described reflective film 8 is formed simultaneously with the source and drain electrode layers 5 and 6 will be described.

First, as shown in FIG. 3A, in a production line, for example, a sputtering process is performed to sequentially deposit a metal layer on an upper portion of the base plate 1, and then a photolithography process using a mask is performed to form the metal layer. By finely etching, the gate electrode layer 2 is formed.

Subsequently, in the production line, for example, SiN _X is deposited on the base plate 1 including the gate electrode layer 2 to form the gate insulating layer 3. Such a gate insulating layer 3 is formed by, for example, PECVD.

Subsequently, the semiconductor layer 4a and the impurity layer 4b are sequentially deposited on the gate insulating layer 3 corresponding to the gate electrode layer 2, and then a photolithography process using a mask is performed to perform gate insulation. By precisely patterning both sides of the semiconductor layer 4a and the impurity layer 4b so that a part of the layer 3 is exposed, an active pattern having a structure in which the semiconductor layer 4a and the impurity layer 4b are sequentially stacked 4) form.

Subsequently, as illustrated in FIG. 3B, for example, a sputtering process is performed to form a source-drain electrode layer (for example, a Ta-based or Al-based) metal layer on the gate insulating layer including the active pattern 4 ( 5,6 and the reflective film 8 electrically connected with the source and drain electrode layers 5,6 are integrally formed.

At this time, the metal layer of "Ta-based or Al-based" constituting the reflective film 8 is a material that is highly suitable for anodization while having a high reflectivity as described above. 8) can be formed smoothly the uneven structure required for itself. Of course, this "Ta-based or Al-based" metal layer also retains electrical conductivity of a certain level or more, so that the material of the source and drain electrode layers 5 and 6 can exhibit excellent characteristics.

Subsequently, in the production line, a photolithography process using a mask is performed to pattern a part of the source and drain electrode layers 5 and 6 to expose a part of the impurity layer 4b constituting the active pattern 4, The patterned source and drain electrode layers 5 and 6 are used as etching masks to expose the channel portion of the semiconductor layer 4a, thereby completing an etch back structure as shown in the drawing.

Subsequently, in the production line, as shown in FIG. 3C, the photoresist film 100 having a predetermined pattern shape is formed on the source and drain electrode layers 5 and 6 and the reflective film 8, and then the "gate electrode layer ( 2) / gate insulating layer 3 / active pattern 4 / source-drain electrode layers 5,6 and reflecting film 8 " In this way, the reflective film 8 integrally connected with the source and drain electrode layers 5 and 6 can be prepared to undergo a series of anodization processes. In this case, in the production line, the pattern size of the remaining photoresist film 100 except for the active pattern 4 is designed in a predetermined shape, so that the "concave-convex shape, depth of concavities and convexities", etc. of the final reflective film 8 are appropriately leveled. Adjust with

Subsequently, in the production line, the base plate 1 on which the above-mentioned layers are formed is immersed in the electrolytic solution tank of the anodizing apparatus, thereby performing a series of anodizing reactions to the above-described reflective film 8. In this case, the oxygen component of the sulfuric acid solution filled with the electrolyte tank oxidizes a part of the reflective film 8 except for the surface covered by the photoresist film 100, and as shown in FIG. 3D, the surface of the reflective film 8 In addition to forming the irregularities 8a having a plurality of curved surfaces, a metal oxide film 9 is formed between the curved surfaces.

When all of the above anodization process is completed, the reflective film 8 according to another embodiment of the present invention is similar to each of the above-described embodiments, "unevenness 8a having a large number of curved surfaces and the curved surface. And a combination of the metal oxide films 9 filled therewith.

When such another embodiment of the present invention is achieved, the reflective film 8, like each of the above-described embodiments, can have a large number of curved surfaces on its surface without having to rely on organic films having poor process characteristics. As a result, it is possible to maintain an even reflectance over the entire area of the self, and, as a result, to provide an effect of making the luminance of the reflected light finally output uniform.

Particularly, in another embodiment of the present invention, the overall structure of the active matrix substrate cell eliminates the formation of the organic film, thereby reducing the process of forming the organic film, and of course, the reflective film 8 may be replaced by the source / drain electrode layer ( By forming at the same time as 5, 6, it is possible to provide an effect of greatly reducing the overall number of steps.

Of course, in another embodiment of the present invention described above, like the above-described embodiments, the secondary anodization process can be further advanced after the primary anodization process. In this case, as shown in FIG. 3E, an insulating oxide film 10 having a very thin thickness is further formed on top of the unevennesses 8a and the metal oxide film 9, and the insulating oxide film 10 is described above. As in the example, it is possible to provide the effect of "stable arrangement of the liquid crystal" and "blocking contact of the reflective film with the ITO electrode" without affecting the uneven structure of the reflective film 8.

As described above in detail, in the present invention, irrespective of the structure of the organic film that is the base of the reflective film, by forming irregularities in the reflective film itself, the luminance of the reflected light emitted to the outside can be maintained uniformly.

The present invention is not limited to the above-described reflective active matrix substrate, but has an overall useful effect in all types of active matrix substrates requiring a concave-convex surface of a certain structure.

And while certain embodiments of the invention have been described and illustrated, it will be apparent that the invention may be embodied in various modifications by those skilled in the art.

Such modified embodiments should not be understood individually from the technical spirit or point of view of the present invention and such modified embodiments should fall within the scope of the appended claims of the present invention.

As described in detail above, in the method of manufacturing a reflective active matrix substrate according to the present invention, a method of forming irregularities on the reflective film is performed differently from the conventional method, so as not to form the uneven surface on the reflective film, for example, the organic film. Instead, a plurality of uneven surfaces are formed on the reflective film formed thereon. In this case, in the production line, for example, an anodizing process is performed to form irregularities having a plurality of curved surfaces on the surface of the reflective film, and a metal oxide film is formed on the curved surfaces between the irregularities.

When the present invention is achieved, the reflective film can have a large number of curved surfaces on its surface without relying on the organic film having poor process characteristics, thereby maintaining an even reflectance throughout its entire area. As a result, it becomes possible to provide the effect of uniforming the luminance of the reflected light finally output.

Claims (6)

Forming a gate electrode layer on the base plate, and forming a gate insulating layer on the base plate to cover the gate electrode layer; Forming an active pattern on the gate insulating layer corresponding to the gate electrode layer; Forming a source / drain electrode layer on the gate insulating layer to cover the active pattern, and then patterning the source / drain electrode layer to expose a channel portion of the active layer and a portion of the gate insulating layer; Forming a passivation film on said gate insulating layer so that said source / drain electrode layer is covered; Patterning the passivation film to expose a portion of the drain electrode layer, and then forming a reflective film on top of the passivation film to be in electrical contact with the drain electrode; Using anodization to form irregularities having a plurality of curved surfaces in a desired region of the reflective film, and to coat a metal oxide film between the curved surfaces of the reflective active matrix substrate cell. Manufacturing method. 2. The reflective active matrix according to claim 1, wherein after forming the irregularities and the metal oxide film, an insulating oxide film is formed on the irregularities and the metal oxide film by using anodization. Method of manufacturing a substrate cell. The method of manufacturing a reflective active matrix substrate cell according to claim 1, wherein the reflective film is made of a metal capable of anodizing and having high reflectivity. The method of claim 3, wherein the reflective film is any one selected from the group consisting of Al-based metals or Ta-based metals. Forming a gate electrode layer on the base plate, forming a reflective film electrically separated from the gate electrode layer, and forming a gate insulating layer on the base plate to cover the gate electrode layer except for the reflective film; Forming an active pattern on the gate insulating layer corresponding to the gate electrode layer; Forming a source / drain electrode layer on the gate insulating layer to cover the active pattern and to be in electrical contact with the reflective film, and then patterning the source / drain electrode layer to expose a channel portion of the active layer; Using anodization to form irregularities having a plurality of curved surfaces in a desired region of the reflective film, and to coat a metal oxide film between the curved surfaces of the reflective active matrix substrate cell. Manufacturing method. Forming a gate electrode layer on the base plate, and forming a gate insulating layer on the base plate to cover the gate electrode layer; Forming an active pattern on the gate insulating layer corresponding to the gate electrode layer; Forming a source and drain electrode layer on the gate insulating layer so as to cover the active pattern, and integrally forming a reflective film electrically connected to the source and drain electrode layer; Using anodization to form irregularities having a plurality of curved surfaces in a desired region of the reflective film, and to coat a metal oxide film between the curved surfaces of the reflective active matrix substrate cell. Manufacturing method.