KR20000053571A - Substrate rising device and vacuum processing device - Google Patents

Abstract

PURPOSE: A device for raising an electric circuit plate and a vacuum treating device which treats the electric circuit plate in a state of standing it up and forms a multilayered film in a same vacuum tank are provided. CONSTITUTION: A device for raising an electric circuit plate comprises: (i) an electric circuit plate loading portion; (ii) an arm portion, one end of which is installed on the electric circuit plate loading portion by a rotating member; and (iii) a driving axis which is installed on the other end of the arm portion and is constructed to be able to rotate around the central axial line and the device is constructed to obtain a first standing-up position where the device for raising an electric circuit plate transmits turning force of the driving axis to the arm portion and stands up the electric circuit plate loading portion with the arm portion in case of raising the electric circuit plate-loading portion from a parallel position where the electric circuit plate-loading portion and the arm portion are parallel and a second standing-up position where the turning force of the driving axis is transmitted to the electric circuit plate loading portion by the rotating member and stands up the electric circuit plate loading portion with keeping the arm portion being parallel. The vacuum treating device comprises a vacuum tank which is able to vacuum-exhaust and the device for raising an electric circuit plate which is arranged in the vacuum tank.

Description

Substrate Standing and Vacuum Processing Equipment {SUBSTRATE RISING DEVICE AND VACUUM PROCESSING DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the technical field of vacuum processing apparatuses for processing a substrate in a vacuum atmosphere, and more particularly, to a sputtering apparatus for processing a substrate in an upright state and simultaneously forming a multilayer film.

Conventionally, the apparatus shown by the code | symbol 100 of FIG. 14 is used as a sputtering apparatus for forming a multilayer film.

This sputtering apparatus 100 has a mounting take-out chamber 101, a conveyance robot 112, and film formation chambers 103 and 113. As shown in FIG.

The board | substrate carried in the mounting extraction chamber 101 is comprised so that it may be conveyed from the mounting extraction chamber 101 to the film formation chamber 103 by the conveyance robot 112. As shown in FIG.

The detailed structure of the said film formation chamber 103 is shown in FIG. This film formation chamber 103 has a vacuum chamber 111. In the vacuum chamber 111, the hot plate combined substrate mounting part 104 is arrange | positioned. Moreover, the vacuum chamber 111 is connected to the conveyance chamber 110, and the conveyance robot 112 is arrange | positioned in the conveyance chamber 110. As shown in FIG.

The transport robot 112 has an arm 116 freely stretchable in the horizontal direction. When the substrate 106 is mounted horizontally on the hand 117 of the tip portion of the arm 116, the substrate 106 is placed in the horizontal direction. Can be conveyed to the predetermined position on the substrate mounting part 104.

The board | substrate mounting part 104 is formed with the some hole, and the several pin 105 which the board | substrate lifting mechanism 120 has is accommodated in each hole.

When the board | substrate elevating mechanism 120 is operated in the state which positioned the board | substrate 106 on the board | substrate mounting part 104, and the pin 105 is moved to the upper side, the board | substrate 106 is placed in the front-end | tip of the pin 105. FIG. In that state, the arm 116 is retracted, the hand 117 is pulled out between the substrate 106 and the substrate mounting portion 104 and returned to the transfer chamber 110, and then the pin 105 is moved downward. When the pin 105 is accommodated in the hole of the substrate mounting portion 104, the substrate 106 is transferred to the substrate mounting portion 104.

Thereafter, the substrate holding mechanism provided in the substrate mounting portion 104 is operated to hold the substrate 106 in close contact with the surface of the substrate mounting portion 104. A rotating shaft 124 is attached to the substrate mounting portion 104, and a motor (not shown) is directly connected to the rotating shaft 124. The substrate mounting portion 104 stands up by rotating the rotating shaft 124 by driving the motor. 106 stands with the substrate mounting part 104.

The cathode 108 is provided in the wall surface of the vacuum chamber 111, and when the board | substrate 106 stands up in the state in which it adhered to the board | substrate mounting part 104, the board | substrate 106 will be parallel with the target provided in the cathode 108. Are arranged opposite.

When a voltage is applied to the cathode 108 in that state, the target is sputtered and a thin film of the first layer is formed on the surface of the substrate 106 standing up.

In this way, after a thin film is formed on the surface of the substrate 106, the substrate is carried out from the film forming chamber 103 to the transport robot 112 and brought into the film forming chamber 113, and 2 in the film forming chamber 113. The layer forming process is performed.

Thereafter, the substrate is conveyed from the film formation chamber 113 to the mounting take-out chamber 101 and taken out of the apparatus.

Since the film forming chambers 103 and 113 described above do not slide when the substrate 106 moves or stands, no dust is generated in the vacuum chamber 111, and the thin film is formed on the surface of the substrate 106 in a standing state. Because of this formation, even if dust is generated from the target or its vicinity, it does not adhere to the surface of the substrate 106, and thus a high quality thin film without defects is obtained.

However, since the film forming chambers 103 and 113 have only one cathode 108 as shown in FIG. 15, only a single layer film can be formed in each of the film forming chambers 103 and 113. .

Therefore, when forming a multilayer film, a large number of film forming chambers are required. For example, in a device such as a glass substrate for a liquid crystal display device, which is larger from 400 mm by 500 mm, the space occupied by the film forming chamber is large. Grows In addition, since the substrate must be moved between the plurality of film formation chambers, a problem arises in that the movement time of the substrate becomes long and the throughput decreases.

The present invention has been made to meet the requirements of the prior art, and its object is to provide a vacuum processing apparatus capable of processing a substrate in an upright state and further forming a multilayer film in the same vacuum chamber.

In order to solve the said subject, the invention of Claim 1 is equipped with the board | substrate mounting part which mounts a board | substrate, the arm part provided in the board | substrate mounting part through the rotating member, and the other end of the arm part, and rotates about a center axis line. A substrate mounting apparatus having a drive shaft configured to be capable of performing the above, wherein in the case of standing the substrate mounting portion from a horizontal position in which the substrate mounting portion and the arm portion are horizontal, the substrate standing apparatus transmits the rotational force of the drive shaft to the arm portion. And a first standing posture for standing the substrate mounting portion together with the arm portion, and transmitting a rotational force of the driving shaft to the substrate mounting portion through the rotating member, and standing the substrate mounting portion while maintaining the arm portion in a horizontal state. It is characterized in that it is configured to obtain a second standing posture.

The invention according to claim 2 has at least two substrate mounting portions overlapping up and down in a horizontal posture, each substrate mounting portion being provided with drive shafts, and each substrate mounting portion is configured to stand each of the substrate mounting portions by rotating the drive shaft. In the apparatus, the substrate mounting portion disposed on the upper side of the substrate mounting portion is formed with a substrate passing hole for passing the substrate in a horizontal state in the vertical direction, and a hook is provided at the periphery of the substrate passing hole. When it protrudes in a board | substrate through hole, it is comprised so that the said board | substrate may be mounted on the hook.

The invention according to claim 3 is the substrate rising device according to claim 2, wherein when the substrate mounting portions overlap each other up and down, the tip of the substrate lift pins disposed below the substrate mounting portions rises to an upper position than the substrate mounting portions. Characterized in that configured to be.

The invention according to claim 4 is a vacuum processing apparatus having a vacuum chamber capable of evacuating a vacuum, and a substrate rising apparatus disposed in the vacuum chamber, wherein the substrate rising apparatus includes a substrate mounting portion on which a substrate is mounted, and one end of the substrate through a rotating member. A substrate mounting apparatus having an arm portion provided in a mounting portion and a drive shaft provided at the other end of the arm portion, the drive shaft being configured to be rotatable about a central axis, wherein the substrate mounting portion stands on a horizontal posture in which the substrate mounting portion and the arm portion are horizontal. In this case, the substrate rising device transmits the rotational force of the drive shaft to the arm, the first standing posture of standing the substrate mounting portion together with the arm portion, and the rotational force of the drive shaft through the rotating member. It transfers to a mounting part and stands up the said board | substrate mounting part, keeping the arm part horizontally. It is characterized in that it is configured to obtain a second standing posture.

The invention as set forth in claim 5 is the vacuum processing apparatus as set forth in claim 4, further comprising a swivel, wherein the swivel is disposed at the bottom of the vacuum chamber and is configured to rotate within a horizontal plane, and the substrate standing apparatus is the swivel. It is mounted to, when the swivel is rotated, characterized in that configured to rotate with the swivel.

An invention according to claim 6 is a vacuum processing apparatus having a vacuum chamber capable of evacuating a vacuum, and a substrate rising apparatus disposed in the vacuum chamber, wherein the substrate rising apparatus has at least two substrate mounting portions overlapping up and down in a horizontal posture, A drive shaft is provided in each of the substrate mounting portions, and the substrate mounting apparatus is configured to stand each of the substrate mounting portions by rotating the driving shaft, wherein the substrate in a horizontal state is placed up and down on the substrate mounting portions disposed above the substrate mounting portions. A substrate passage hole is formed to pass in the direction, and a hook is provided at the periphery of the substrate passage hole, and when the hook is projected into the substrate passage hole, the substrate is mounted on the hook.

The invention as set forth in claim 7 is the vacuum processing apparatus as set forth in claim 6, further comprising a swivel table, said swivel table being disposed at the bottom of said vacuum chamber, and being configured to rotate in a horizontal plane, said substrate standing device being said swivel table. It is mounted to, when the swivel is rotated, characterized in that configured to rotate with the swivel.

The invention as set forth in claim 8 is a vacuum processing apparatus comprising: a vacuum chamber capable of vacuum evacuation, a plurality of processing means on a side wall, and a substrate standing apparatus, wherein the substrate standing apparatus stands in a horizontal state while holding the substrate. And in the vacuum chamber so as to oppose the substrates to the plurality of processing means, respectively, in a standing state.

The invention as set forth in claim 9 is the vacuum processing apparatus as set forth in claim 8, further comprising a swivel table, said swivel table being disposed at the bottom of said vacuum chamber, and being configured to rotate in a horizontal plane. It is mounted to the swivel, characterized in that configured to rotate with the swivel when the swivel rotates.

Invention of Claim 10 is a vacuum processing apparatus of Claim 8, The said processing means is a sputtering cathode. It is characterized by the above-mentioned.

The invention as set forth in claim 11 is a vacuum processing apparatus comprising: a vacuum chamber capable of evacuating a vacuum, a window provided on a side wall of the vacuum chamber, a frame mounted around the window, processing means mounted on the frame and disposed to face the window; And a swivel table disposed at the bottom of the vacuum chamber, and a plurality of substrate standing apparatuses installed on the rotating object, wherein the substrate standing apparatus may be in a horizontal state or a standing state by holding a substrate. It is configured to oppose the substrate to the processing means, the swivel is characterized in that it is configured to rotate in a horizontal plane with the substrate standing device.

Invention of Claim 12 is a vacuum processing apparatus of Claim 11, The said processing means is a sputtering cathode. It is characterized by the above-mentioned.

The invention according to claim 13 is the vacuum processing apparatus according to claim 11, wherein the plurality of substrate mounting apparatuses have a substrate mounting portion, and the substrate mounting portion can be either in a horizontal state or in an standing state, and in the standing state. It is configured to face the processing means through, wherein at least one of the substrate mounting portion, the substrate mounting portion has a shielding portion, the shielding portion is configured to cover the window in a state where the substrate mounting portion having this shielding portion standing up It features.

The invention according to claim 14 is the vacuum treatment means according to claim 13, wherein the shielding portion is formed in a plate shape.

The invention as set forth in claim 15 is the vacuum processing apparatus as set forth in claim 13, wherein the space formed between the mold, the processing means, and the substrate mounting part is made to be in an airtight state when the substrate is opposed to the processing means in an upright state. Characterized in that configured.

According to a sixteenth aspect of the present invention, there is provided a vacuum processing apparatus according to claim 15, wherein either or both of the inner wall of the vacuum chamber or the substrate mounting portion is provided with a sealing member, and the sealing member is formed by the processing means with the substrate standing up. When facing, it is configured to be disposed between the inner wall of the vacuum chamber around the window and the substrate mounting portion.

The invention according to claim 17 is the vacuum treatment apparatus according to claim 15, wherein the processing means is a sputtering cathode and is configured to introduce a sputtering gas into a space formed between the frame, the processing means, and the substrate mounting portion. It is done.

According to the substrate standing apparatus of the present invention described above, the substrate mounting portion, the rotating member, the arm portion and the drive shaft, and transmits the rotational force of the drive shaft to the arm portion from a horizontal posture in which the substrate mounting portion and the arm portion are horizontal, the substrate mounting portion and From the first standing posture in which the arm part is standing, and the horizontal posture in which the board mounting part and the arm part are horizontal, the rotational force of the drive shaft is transmitted to the substrate mounting part via the rotating member, and the second standing standing the substrate mounting part is made while the arm part is horizontal. It is configured to get a posture.

When the rotational force of the drive shaft is transmitted to the arm and rotated, and when the substrate mounting portion is standing vertically from the horizontal posture, the substrate mounting portion is integrated with the arm portion and rises around the driving shaft, and the surface of the substrate mounting portion is outside of the substrate raising device. Take a position to face (first standing posture).

On the other hand, when the rotational force of the drive shaft is transmitted to the rotating member and the arm portion is horizontal and the substrate mounting portion is standing up, the substrate mounting portion rises around the rotating member, and the surface of the substrate mounting portion faces the outside of the substrate standing apparatus. Take a posture (second standing posture).

As described above, in both the first standing posture and the second standing posture, the substrate mounting portion stands up vertically so that the surface of the substrate mounting portion faces the outside of the substrate standing apparatus. In the first standing posture, the substrate mounting portion Since the arm portion is raised and only the substrate mounting portion is raised around the rotating member in the second standing posture, the directions in which the substrate mounting portions rise in the first and second standing postures are opposite to each other. When the substrate is mounted, the substrate surfaces face in opposite directions in the first and second standing postures.

When such a substrate standing apparatus is arranged in a vacuum chamber, two cathodes are disposed in the vacuum chamber, and a target is provided in each cathode, the substrate mounting portion is placed in the first standing posture while the substrate is held. The surface can be arranged opposite to one cathode, and on the other hand, when the substrate mounting portion is in the second standing posture, the substrate surface can be arranged opposite to the other cathode.

For this reason, the substrate surface is disposed opposite to one cathode, one target material is sputtered onto the substrate surface, and the film formation treatment of the first layer is carried out, and then the substrate surface is disposed opposite to the other cathode so as to form the other target material. Since the film formation treatment of the second layer can be performed by sputtering on the surface of the substrate, two laminated films can be formed in a single vacuum chamber.

Therefore, when forming a two-layer film, since two film forming chambers are not required as in the prior art, the space occupied by the film forming chamber can be reduced by that much. Further, since the time for moving the substrate between the two film forming chambers is not necessary, the throughput can be improved.

In another embodiment of the substrate erecting apparatus of the present invention, the substrate mounting portion has at least two substrate mounting portions that overlap each other vertically in a horizontal posture. Each substrate mounting portion is provided with drive shafts, and the substrate mounting portions are erected by rotating the drive shafts, respectively. It is supposed to be.

The substrate mounting portion is capable of holding the substrate when the hook protrudes through the substrate through-hole in a horizontal posture, and can pass through the substrate when the hook is stored. The substrate held by storing the hook of the mounting portion is in a state capable of being moved to the other substrate mounting portion through the substrate passing hole, and the substrate is moved up and down to be placed in the substrate passing hole of the other substrate mounting portion, and the hook of the other substrate mounting portion is The substrate can be held at another substrate mounting portion by protruding into the substrate through hole, and the substrate can be moved between the substrate mounting portions.

Thus, the substrate can be moved between the substrate mounting portions, so that the surfaces of the plurality of substrate mounting portions stand in different directions, the substrate surfaces face in different directions, and one cathode in each of the directions facing the substrate surfaces. Is placed, the substrate is mounted on a substrate mounting portion, the substrate surface is disposed to face a predetermined cathode, the target provided on the cathode is sputtered on the substrate surface, and the film formation treatment of the first layer is performed. The substrate is moved from the mounting portion to the other substrate mounting portion, the substrate surface is disposed opposite to the other cathode, and another target is sputtered onto the substrate surface to perform the second layer film forming process.

Further, the other substrate standing apparatuses of the present invention have a plurality of substrate standing apparatuses, a swivel table, and a processing means, and when the swivel tables are rotated in a horizontal plane about a vertical axis of rotation, the plurality of substrate standing apparatuses can be rotated. Each substrate standing apparatus is capable of opposing the substrate to the processing means while holding the substrate.

As an example, when three processing means and three substrate standing apparatuses are provided in a vacuum chamber, and the 1st, 2nd, and 3rd board | substrate standing apparatuses are arrange | positioned horizontally in order from the top to a rotating object, it is horizontal first. The second substrate is placed in a horizontal state while holding the first substrate in the first substrate standing apparatus arranged at the top in the state, and then the first substrate standing apparatus stands up to face the first processing means. The second substrate is held in the apparatus.

Subsequently, the first substrate is processed by the first processing means, and then the swivel table is rotated by a predetermined angle to rotate the first to third substrate standing apparatuses by a predetermined angle, and the first substrate is opposed to the second processing means. At the same time, the second substrate standing apparatus is standing up, and the second substrate is opposed to the first processing means.

In this state, the two substrates can be processed simultaneously by treating the first substrate with the second processing means and by treating the second substrate with the first processing means. Therefore, especially when processing several board | substrates continuously, the time required for processing can be shortened compared with the past.

In addition, according to the vacuum processing apparatus of the present invention described above, the surface of the substrate can be sequentially opposed to a plurality of processing means, such as a sputtering cathode, provided on the side wall of the vacuum chamber by the substrate standing apparatus disposed in the vacuum chamber. The film formation process by sputtering can be performed to the surface sequentially.

In this way, each target can be sputtered on the substrate surface with the substrate surface facing the plurality of cathodes, and a multilayer film can be formed in one vacuum chamber.

Therefore, when forming a multilayer film, since a some film formation chamber is not needed, the space which a film formation chamber occupies can be reduced. In addition, since the time for moving the substrate between the film forming chambers is not required, the throughput can be improved.

Moreover, in another structure of this invention, the vacuum processing apparatus and the vacuum processing apparatus which have a board | substrate standing apparatus have the rotating table which can rotate in a horizontal plane, The board | substrate standing apparatus is attached to a rotating table, and can rotate with a rotating table.

For this reason, when the substrate standing apparatus holding the substrate is in a horizontal state, the substrate is placed by rotating the rotating table, and when the substrate is placed at the position of the cathode, the substrate is placed in an upright position, and the substrate is placed in any cathode direction in the vacuum chamber. Can face the surface of the.

Further, according to the other vacuum processing apparatus of the present invention, the plurality of substrate mounting apparatuses have a substrate mounting portion, and at least one of the substrate mounting portions has a plate-shaped substrate mounting portion, and is in a horizontal state or a standing state. It is possible to do this, and it is comprised so that it may oppose a processing means in a standing state.

If the vacuum processing apparatus is a sputtering apparatus and the processing means is a sputtering target, when a new target is placed in the vacuum chamber, the target is sputtered in a predetermined amount to improve the surface condition of the target (hereinafter referred to as pre-sputtering). ) It is necessary to form a film on the substrate to be formed. In order to carry out the conventional sputtering, the dummy substrate is disposed to face the target, and a thin film having a predetermined film thickness is formed on the dummy substrate.

At this time, a glass substrate was used as the dummy substrate. Since the glass substrate is weak in strength and cannot form a thick film, sufficient pre-sputtering could not be performed without forming a film while frequently replacing a plurality of glass substrates. Therefore, a long time was required for the presputter due to the replacement time of the glass substrate.

It is also conceivable to use a strong metal plate as a dummy substrate, but since a metal plate cannot be brought into a vacuum chamber by a transport robot originally designed for a glass substrate, it is practically impossible to use a metal plate as a dummy substrate. did.

However, in the present invention, since at least one of the substrate mounting portions has, for example, a plate-shaped shielding portion and can cover the window when the substrate mounting portion is placed in an upright position to face the target, if the shielding portion sputters the target while the shielding portion covers the window, A thin film can be formed in the shielding portion, and presputtering can be performed without using a dummy substrate.

Therefore, since the time required for replacing the substrate is not required as in the prior art, the pre-sputtering can be performed in a shorter time than in the prior art.

Further, according to the other vacuum processing apparatus of the present invention, when the substrate is opposed to the processing means in the standing state, for example, the space formed by the frame, the processing means and the substrate is airtight by providing the seal member on the substrate mounting portion or the inner wall of the vacuum chamber. I can do it in one state.

For this reason, when a plurality of substrates are simultaneously processed by a plurality of processing means, when processing a predetermined substrate with one processing means, the processing atmosphere of the predetermined substrate can be isolated from the processing atmosphere of other substrates. Different processing can be done individually on the substrate. As an example, when a thin film is formed on the surface of a substrate by sputtering, a reactive sputtering treatment may be performed on a predetermined substrate, and a normal sputtering treatment may be performed on another substrate.

(A) is sectional drawing explaining the vacuum processing apparatus of one Embodiment of this invention, (b) is a perspective view explaining the board | substrate standing apparatus of one Embodiment of this invention, (c) is one Embodiment of this invention (D) is a figure explaining the 1st standing posture of a board | substrate standing apparatus, (e) is a figure explaining the 2nd standing posture of a substrate standing apparatus.

(A) is sectional drawing explaining the vacuum processing apparatus of other embodiment of this invention, (b) is a side view explaining the standing state of the board | substrate standing apparatus of other embodiment of this invention, (c) is this invention (D) is a perspective view explaining the board | substrate standing apparatus of the horizontal state of another embodiment of this invention.

(A) is a top view explaining the state which the board | substrate can pass by the board | substrate mounting part of other embodiment of this invention, (b) is sectional drawing explaining the state which can board | substrate the board | substrate mounting part of other embodiment of this invention, ( c) is a plan view explaining the substrate mountable state of the substrate mounting portion of the other embodiment of the present invention, and (d) is a cross-sectional view illustrating the substrate mountability of the substrate mounting portion of the other embodiment of the present invention.

(A) is 1st sectional drawing which shows the board | substrate moving operation | movement of the board | substrate mounting part of other embodiment of this invention, (b) is a top view which shows the board | substrate moving operation | movement of the board | substrate mounting part of other embodiment of this invention, (c) 2nd sectional drawing which shows the board | substrate moving operation | movement of the board | substrate mounting part of other embodiment of this invention, (d) is 3rd sectional drawing which shows the board | substrate moving operation of the board | substrate mounting part of other embodiment of this invention.

Fig. 5 (a) is a fourth cross sectional view showing a substrate transfer operation of the substrate mounting portion of another embodiment of the present invention, and (b) is a fifth cross sectional view showing the substrate transfer operation of the substrate mounting portion of the other embodiment of the present invention.

6A is a first cross-sectional view illustrating the vacuum processing apparatus of another embodiment of the present invention, and (b) is a second cross-sectional view illustrating the vacuum processing apparatus of another embodiment of the present invention.

Figure 7 (a) is a first perspective view illustrating the operation of the vacuum processing apparatus having three cathodes in another embodiment of the present invention, (b) is a vacuum processing apparatus having three cathodes in another embodiment of the present invention A second perspective view for explaining the operation of (c) is a third perspective view for explaining the operation of the vacuum processing apparatus having three cathodes in another embodiment of the present invention.

(D) is a fourth perspective view for explaining the operation of the vacuum processing apparatus having three cathodes in another embodiment of the present invention, and (e) the vacuum processing apparatus having three cathodes in another embodiment of the present invention. Fifth perspective view for explaining the operation of, (f) is a sixth perspective view for explaining the operation of the vacuum processing apparatus having three cathodes in another embodiment of the present invention.

9 (g) is a seventh perspective view for explaining the operation of a vacuum processing apparatus having three cathodes in another embodiment of the present invention, and (h) is a vacuum processing apparatus having three cathodes in another embodiment of the present invention. 8th perspective view explaining operation | movement of (i) is ninth perspective view explaining operation | movement of the vacuum processing apparatus which has three cathodes in another embodiment of this invention.

(A) is sectional drawing explaining the vacuum processing apparatus of still another embodiment of this invention, (b) is a side view explaining the standing state of the board | substrate standing apparatus of further another embodiment of this invention, (c) is Side view explaining the substrate standing apparatus in the horizontal state of still another embodiment of the present invention, (d) is a perspective view illustrating the substrate standing apparatus in the standing state in still another embodiment of the present invention.

FIG. 11A is a first drawing explaining the operation of the vacuum processing apparatus of still another embodiment of the present invention, and FIG. 11B is a second view explaining the operation of the vacuum processing apparatus of still another embodiment of the present invention. (C) is a third drawing explaining the operation of the vacuum processing apparatus of another embodiment of the present invention, and (d) is a fourth drawing explaining the operation of the vacuum processing apparatus of another embodiment of the present invention. (E) is a fifth view for explaining the operation of the vacuum processing apparatus according to another embodiment of the present invention.

Fig. 12 is a graph for explaining the relationship between the accumulated power of the target and the number of occurrences of arc discharge after the atmospheric opening.

13 is a sectional view showing the principal parts of a vacuum processing apparatus according to still another embodiment of the present invention.

14 is a view showing an example of a conventional vacuum processing apparatus.

15 is a view showing an example of a film forming chamber of the prior art.

"Description of Symbols for Major Parts of Drawings"

31, 41, 71, 81: substrate standing device

32, 42 ₁ , 42 ₂ , 42 ₃ , 80: substrate mounting part

30, 41, 61, 75, 93: vacuum chamber 34: rotating member

35: drive shaft 47, 57, 67: hook

49: substrate passage hole 72: swivel

75a, 75b, 75c: Window 76 ₁ , 76 ₂ , 76 ₃ : Frame

99: O-shaped ring (sealing member)

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings.

Reference numeral 3 in FIG. 1A is a cross-sectional view of an embodiment of the vacuum processing apparatus of the present invention as seen from above, and includes a vacuum chamber 11 and a transfer chamber 10.

In the vacuum chamber 11, the board | substrate standing apparatus 31 and the board | substrate lifting mechanism not shown are provided, and it is comprised so that the inside can be evacuated by a vacuum pump (not shown).

One window (not shown) is provided in two opposing wall surfaces of the vacuum chamber 11, and each cathode is equipped with one cathode 8 ₁ , 8 ₂ . Each cathode 8 ₁ , 8 ₂ is configured to face in the vacuum chamber 11 from the window.

As shown in (b) and (c) of FIG. 1, the substrate standing apparatus 31 includes a plate-shaped substrate mounting portion 32, an arm portion 33, a rotating member 34, and a drive shaft 35. Have

One surface of the substrate mounting portion 32 serves as a mounting surface 37, and the substrate mounting portion 32 can be mounted thereon and held by a holding mechanism (not shown).

This board | substrate mounting part 32 is normally horizontal (this state is called a horizontal posture below), and the mounting surface 37 is made to face upward in that state. One end of the rotating member 34 is attached to the side surface of the substrate mounting portion 32, and can rotate at a predetermined angle about the central axis 21.

One end of the arm portion 33 is mounted at the other end of the rotating member 34, and one end of the drive shaft 35 is mounted at the other end of the arm portion 33, and the drive shaft 35 has its central axis 22. A predetermined angle can be rotated about the center. The other end of the drive shaft 35 is attached to the motor 36. When the motor 36 rotates (hereinafter referred to as "rotation", the rotation angle also includes a rotation of less than 360 °), the drive shaft 35 It is supposed to be able to rotate.

Inside the arm portion 33, a power transmission mechanism (not shown) such as a belt and a power switching mechanism (not shown) are provided, and the rotational force of the drive shaft 35 is controlled by the power switching mechanism. ) Can also be transmitted to the rotating member (34).

When the rotational force of the drive shaft 35 is transmitted to the arm portion 33, the rotating member 34 and the substrate mounting portion 32 are fixed by the power switching mechanism. When the arm portion 33 rotates, the substrate mounting portion ( 32 is integrated with the arm portion 33 so as to stand up, and on the other hand, when the rotational force of the drive shaft 35 is transmitted to the rotating member 34, the rotating member 34 and the substrate mounting portion 32 by the power switching mechanism. Is released, the rotational force of the drive shaft 35 is transmitted to the rotating member 34 by the power transmission mechanism, and when the drive shaft 35 is rotated, only the substrate mounting portion 32 is left with the arm portion 33 horizontal. It is supposed to stand.

When the motor 36 is driven from the horizontal posture in which the substrate mounting part 32 and the arm part 33 are horizontal in such a substrate standing apparatus 31, the drive shaft 35 rotates about the center axis line 22. As shown in FIG. do. When the power switching mechanism operates and the rotational force of the drive shaft 35 is transmitted to the arm portion 33, the substrate mounting portion 32 stands up with the arm portion 33. The motor 36 is configured to stop the drive shaft 35 after the predetermined angle is rotated, and as shown in FIG. 1D when the drive shaft 35 is stopped, the substrate mounting portion 32 is 70 ° to 90 °. It can remain in the standing position in the ° range (first standing posture).

On the other hand, after setting the substrate mounting portion 32 in a horizontal position, the operation of the power switching mechanism is switched, and the motor 36 is driven to rotate the drive shaft 35, whereby the rotational force of the drive shaft 35 is transmitted through the power transmission mechanism. It is transmitted to the rotating member 34, the rotating member 34 rotates about the central axis 21, and only the board | substrate mounting part 32 stands up with the arm part 33 horizontal.

The motor 36 stops the drive shaft 35 after the rotation of the predetermined angle, and when the drive shaft 35 is stopped, the substrate mounting portion 32 is in the range of 70 ° to 90 ° as shown in Fig. 1E. It can remain in the standing position (second standing posture) in.

In the above-mentioned substrate standing apparatus 31, in the first standing posture (Fig. 1 (d)) and the second standing posture (Fig. 1 (e)), the substrate mounting portion 32 is in the range of 70 ° to 90 °. In the first standing posture, the substrate mounting portion 32 stands up around the drive shaft 35, and in the second standing posture stands up around the rotating member 34. In the second standing posture, the substrate mounting portions 32 stand in opposite directions to each other, and the mounting surface 37 also faces in the opposite directions.

In such a board the standing apparatus 31 for the vacuum processing apparatus 3 of this embodiment has a substrate placing portion 32 is parallel to face the cathode ₍₈₁₎ of the mounting surface 37 is one in the first standing position (D) in FIG. 1, in the second standing posture, the mounting surface 37 is disposed in the vacuum chamber 11 so as to face the other cathode 8 ₂ in parallel ((e) in FIG. 1). .

In such a vacuum processing apparatus 3, in order to form a thin film on a substrate by the sputtering method, a substrate in a horizontal state from the transfer chamber 10 is loaded into the vacuum chamber 11 with a transfer system not shown in the beginning, It mounts on the mounting surface 37 of the board | substrate mounting part 32 which exists, and keeps in close contact with the surface of the mounting surface 37 with the holding mechanism not shown.

Subsequently, the drive shaft 35 is rotated to raise the substrate mounting portion 32 to obtain a first standing posture (FIG. 1D). As described above, in the first standing posture, the mounting surface 37 is disposed in parallel to one cathode 8 ₁ , so that the substrate surface is disposed in parallel to the cathode 8 ₁ .

In that state, a predetermined voltage is applied to one cathode 8 ₁ . One cathode 8 _{1 is} provided with an Al (aluminum) target (not shown). The Al target is sputtered on the substrate surface, and a first layer thin film Al is formed on the substrate surface.

When an Al thin film having a predetermined film thickness is formed on the surface of the substrate, application of voltage to one cathode 8 ₁ is stopped and sputtering is stopped.

Thereafter, the motor 36 is driven to rotate the drive shaft 35 by a predetermined angle, and the substrate mounting part 32 is knocked down to return to a horizontal position. When returning to a horizontal position, the motor 36 is driven to rotate the rotating member 34 by a predetermined angle, and the substrate mounting portion 32 is set as the second standing posture (Fig. 1 (e)). As described above, in the second standing posture, the mounting surface 37 is disposed in parallel to the other cathode 8 ₂ , so that the substrate surface is disposed in parallel to the cathode 8 ₂ .

When voltage is applied to the other cathode 8 ₂ in this state, the other cathode 8 _{2 is} provided with a Ti (titanium) target (not shown), and the Ti target is sputtered, thus standing up. The second layer of thin film Ti is formed on the substrate surface of the substrate.

Subsequently, the motor 36 is driven to rotate the rotating member 34 by a predetermined angle to return the substrate mounting portion 32 to a horizontal position, and then the substrate is transferred from the vacuum chamber 11 to the conveyance chamber 10 by a conveying system (not shown). ) And take it out of the apparatus.

As described above, in the vacuum processing apparatus 3 of the present invention, the substrate standing apparatus 31 is provided, and the substrate surface is disposed in parallel with the cathodes 8 ₁ and 8 ₂ in the first and second standing positions, respectively. Since Al substrate is formed by sputtering the Al target provided on one cathode 8 ₁ to the substrate surface with the substrate mounting portion 32 as the first standing posture, the Al film is formed in the same vacuum chamber 11. The other cathode 8 ₂ can be sputtered onto the substrate surface with the substrate mounting portion 32 as the second standing posture to form a Ti film on the substrate surface, and a two-layer film of Ti and Al in the single vacuum chamber 11 is formed. It can be formed on the substrate surface.

Therefore, when forming a two-layer film, since two film forming chambers are not required as conventionally, the space occupied by the film forming chamber can be reduced by that much.

In addition, since the time for moving the substrate between the film forming chambers is not necessary, the throughput can be improved.

In the above-mentioned substrate standing apparatus 31, a power transmission mechanism such as a belt and a power switching mechanism are provided inside the arm portion 33, but the present invention is not limited to this, and the driving shaft 35 is not limited to this. What is necessary is just to have a mechanism which can transmit rotational force to either the arm part 33 and the rotating member 34, and can take a 1st standing posture and a 2nd standing posture.

Moreover, although the plate-shaped board | substrate mounting part 32 is used, this invention is not limited to this, For example, you may use a frame-shaped board | substrate mounting part.

Hereinafter, another embodiment of the present invention will be described.

Reference numeral 33 in Fig. 2A shows a vacuum processing apparatus according to another embodiment of the present invention. This vacuum processing apparatus 33 has the vacuum chamber 30 and the conveyance chamber 40.

One wall surface of the vacuum chamber 30 faces the conveyance chamber 40, and one window (not shown) is provided on each of the three wall surfaces of the vacuum chamber 30 that do not face the conveyance chamber 40. The windows are equipped with _first to third cathodes 38 ₁ to 38 ₃ , respectively. Surface in the respective cathode (38 ₁ to 35 ₃₎ is adapted to face in the vacuum tank 30 from the window.

The substrate standing apparatus 41 is provided in the vacuum chamber 30, and is comprised so that the inside of the vacuum chamber 30 can be evacuated by the vacuum pump (not shown).

Substrate standing device 41 has the first to third substrate mounting portion (42 ₁ to 42 ₃₎ and a rotary shaft (45 ₁ to 45 _3), as shown in (b), (c) of FIG.

As shown in Fig. 2C, the first to third substrate mounting portions 42 ₁ to 42 ₃ are all in a horizontal state, and the first, second and third substrate mounting portions 42 ₁ and 42 are from above. _2, is disposed so as to overlap by 42 ₃₎ sequence.

The first to third drive shafts 45 ₁ to 45 ₃ are mounted on the side surfaces of the first to third substrate mounting portions 42 ₁ to 42 ₃ , respectively, and the first to third drive shafts 45 ₁ to 45 ₃ are provided. When rotated by a predetermined angle, the first to third substrate mounting portions 42 ₁ to 42 ₃ are erected with respect to each center axis line 53 ₁ to 53 ₃ so as to stand in a state of standing in a range of 70 to 90 degrees. It is.

The first to third substrate mounting portions 42 ₁ to 42 ₃ stand in different directions, and each of the substrate mounting portions 42 ₁ to 42 ₃ faces each other in a different direction. This section is such that parallel opposed to each board mounting portion (42 ₁ ~ 42 ₃₎ when the standing state, each of the first, second, and third cathodes (38 _1, 38 _2, 38 _3).

Each board | substrate mounting part 42 consists of the frame body 48 which has the board | substrate through-hole 49 larger than a board | substrate, as shown to (a), (b) of FIG. The substrate can be passed in the vertical direction.

Four hooks 47 ₁ to 47 ₄ protruding from the substrate passage hole 49 are provided on the rear surface of the frame 48, and each of the hooks 47 ₁ to _{4 4 4} is a shaft 46 ₁ to _{4 4 4} . Is attached to the frame 48. The hooks 47 ₁ to _{4 4 4} rotate about a predetermined angle about the shafts 46 ₁ to _{4 4 4} and protrude into the substrate through-hole 49. When the hooks _{4 1} to _{4 4 4} protrude the hooks 47 ₁ to _{4 4 4} . It can be mounted on the top.

When forming a thin film using the vacuum processing apparatus 33 of this embodiment which has the above-mentioned board | substrate standing apparatus 41, it became the horizontal state by the hand of the conveyance robot which is not shown in figure from the conveyance chamber 40 beforehand. The substrate is loaded into the vacuum chamber 30 and remains as it is above the substrate standing apparatus 41. First to third substrate mounting portion (42 ₁ to 42 ₃₎ in this case the substrate standing device 41 may previously be a horizontal state, the substrate is disposed above the first substrate mounting a horizontal state _{(42: 1)} .

The board | substrate elevating mechanism 44 is arrange | positioned under the board | substrate standing apparatus 41, This board | substrate raising mechanism 44 has several board | substrate lifting pins 51 ₁ and 51 ₂ which can move up and down. On the upper side of all the lifting pins (51 _1, 51 ₂₎ when the user moves toward the image side, each board mounting portion (42 ₁ ~ 42 ₃₎ that its front end a first substrate mounting portion through the substrate through hole 49 of the (42 ₁₎ It is intended to be located.

First moving the substrate mounting portion (42 _1), the lifting pins (51 _1, 51 ₂₎ in a state in which position the substrate 50 on the image side, the substrate is placed at the front end of the lifting pins (51 _1, 51 _2).

The was returned into the first transfer chamber 10, the hand in a state in which the projecting hook portion 47 of the board mounting portion (42 ₁₎ was removed from between the substrate 50 and the first board mounting portion (42 _1), lift pins (51 _{When 1} and 51 ₂ are moved downward, the substrate is placed on the hook 47 and is transferred from the hand to the first substrate mounting portion 42 ₁ ((a) in FIG. 4 and (b) in FIG. 4). .

In this state, when the maintaining the substrate at a holding mechanism (not shown) in close contact with the first board mounting portion (42 ₁₎ and the first drive shaft (45 ₁₎ a first substrate mounting portion to rotate a predetermined angle (42 ₁₎ to the standing state The surface of the substrate 50 is disposed opposite to the first cathode 38 ₁ .

The voltage to the first cathode (38 _1), Mo (molybdenum) target (not shown) are provided, the surface of the substrate and the first cathode (38 ₁₎ a first cathode in a parallel opposing arrangement (38 ₁₎ When Mo is applied, the Mo target is sputtered, and the first layer of thin film Mo is formed on the substrate surface in the standing state.

Next, the first drive shaft to rotate the (45 ₁₎ to return the first substrate mounting portion (42 ₁₎ in a horizontal state ((a), (b) of Fig. 4 in Fig. 4).

Next, the lifting pins 51 ₁ , 51 ₂ are moved upward, and the tip is brought into contact with the rear surface of the substrate 50 (FIG. 4C). In this state, when the hooks 47 ₁ and 47 ₂ of the first substrate mounting portion 42 _{1 on} which the substrate 50 is mounted are accommodated up to that time, the substrate 50 is moved upward and downward through the substrate passing hole 49. Can move freely.

At this time, by extruding with the hook (57 _1, 57 ₂₎ of the second substrate of the lower mounting portion (42 _2), thereby lowering the lift pins (51 _1, 51 ₂₎ ((d) in Fig. 4). Then, the board | substrate 50 is mounted on the hooks 57 ₁ and 57 ₂ of the 2nd board | substrate mounting part 42 ₂ (FIG. 5 (a)).

In this manner the substrate 50 is a first substrate mounting portion (42 ₁₎ from the placed transferred to the second substrate mounting portion (42 ₂₎ load and at the same time, the lifting pins (51 _1, 51 ₂₎ for holding to the substrate lowering mechanism 44 When the housing after the first substrate mounting portion (42 ₁₎ back to the standing position ((b) in Fig. 5), the second driving shaft (45 ₂₎ by a predetermined angle of rotation to the standing a second substrate mounting portion (42 ₂₎ number and, in parallel with the surface of the holding substrate 50 with the second cathode (38 ₂₎ can be arranged opposite.

A second cathode (38 _2), Al (aluminum) as a target (not shown) are provided, at the surface is disposed opposite to the second cathode (38 ₂₎ the state of the substrate 50, a second cathode (38 ₂₎ When a predetermined voltage is applied to the Al target, the Al target is sputtered on the surface of the substrate 50 so that the second layer thin film Al is formed on the surface of the substrate 50.

Subsequently, the second drive shaft 45 ₂ is rotated by a predetermined angle to return the second substrate mounting portion 42 ₂ to a horizontal state. The lifting pins 51 ₁ and 51 ₂ are raised in the same manner as described above, and the tip ends thereof. In contact with the rear surface of the substrate 50, the hooks 57 ₁ , 57 ₂ of the second substrate mounting portion 42 ₂ are accommodated, and the substrate 50 is movable up and down through the substrate through hole 49. and to thereby mount the lifting pins (51 _1, 51 _2), the hook (67 _1, 67 _2), the substrate 50 on the substrate mounting portion of the third (42 ₃₎ is lowered to.

Thereafter, the second substrate mounting portion (42 ₂₎ to the back stand to the standing state, and the third substrate mounted portion (42 ₃₎ to the standing state.

When the third drive shaft (45 ₃₎ from this state, a predetermined angular rotation, first to third substrate mounting portion (42 ₃₎ is rising and the surface of the substrate by the holding board 50 in the standing state 3 the cathode (38 ₂₎ Can be arranged in parallel.

The third cathode (38 _3), Ti (titanium) target is are provided, and the third applying a predetermined voltage to the cathode (38 _3), a Ti target is sputtered to the surface of the substrate 50 of the 3-layer thin film (Ti ) Is formed on the surface of the substrate 50.

In this way when the surface of the substrate 50 to form a thin film having a three-layer, again the third drive shaft (45 ₃₎ is rotated a predetermined angle, first and returned to the three substrate mounting portion (42 ₃₎ horizontal position, lift pins ( 51 ₁ , 51 ₂ ) is moved upwards. Then, the substrate 50 is placed at the tip of the lifting pins 51 ₁ and 51 ₂ and rises.

When the board | substrate 50 rises to a predetermined height, a hand is put in the vacuum chamber 31 again, and it is located under the board | substrate 50. FIG. In this state, when the lifting pins 51 ₁ and 51 ₂ are moved downward, the substrate 50 is mounted on the hand in a horizontal state. When the substrate 50 is mounted on the hand, the hand is moved from the vacuum chamber 31 to the transfer chamber 40, and the substrate is taken out to the transfer chamber 40, and taken out of the apparatus.

As described above, in the vacuum processing apparatus 33 according to another embodiment of the present invention, the substrate standing apparatus 41 is provided, and the substrate 50 is placed in the standing state so that the surface of the substrate 50 faces the other three directions. Since three types of targets respectively provided in the cathodes 38 ₁ to 38 ₃ arranged in three directions are sputtered sequentially on the surface of the substrate 50 in one vacuum chamber 30, the three layers A film can be formed.

In this way, since the three-layer film can be laminated on the surface of the substrate 50 in one vacuum chamber 30, when the three-layer film is formed, three vacuum chambers are not required as in the prior art, so that the space occupied by the vacuum chamber Can be reduced by that amount. In addition, since the time for moving the substrate between the vacuum chambers is not necessary, the throughput can be improved.

In the above-mentioned substrate standing device 41, the hook 47 holding the substrate rotates by a predetermined angle about the axis 46 to protrude into the substrate through-hole 49 or to be housed on the frame 48 side. Although the hook of this invention is not limited to this, What is necessary is just to be able to protrude, for example, and it is good also as a structure which protrudes or is accommodated by the hook 47 moving in parallel.

Hereinafter, another embodiment of the present invention will be described.

6, the vacuum processing apparatus of other embodiment of this invention is shown. This vacuum processing apparatus 63 has a vacuum chamber 61 and the conveyance chamber 70.

As shown in FIG. 6, the vacuum chamber 61 has a pentagonal shape, and has five wall surfaces. One of the walls faces the transfer chamber 70, and the other four walls are provided with one window (not shown) and one cathode for each window (68 ₁ , 68 ₂ , 68 ₃ , 68 _4). ) Are mounted in the counterclockwise order. The surface of each cathode 68 ₁ , 68 ₂ , 68 ₃ , 68 ₄ is configured to face in the vacuum chamber 61 from the window.

In the vacuum chamber 61, the substrate standing apparatus 71 and the rotating table 72 are provided, and the rotating table 72 is arrange | positioned at the bottom of the vacuum chamber 61. As shown in FIG. On the upper side of the swivel table 72, a substrate standing device 71 is mounted.

This substrate standing device 71 has a substrate mounting portion 80. The substrate mounting portion 80 has the same configuration as the substrate mounting portion 104 of the conventional apparatus, and is capable of holding the substrate in close contact and taking either of a horizontal posture and a standing posture in the range of 70 ° to 90 °.

The rotating table 72 is capable of rotating in the horizontal plane about the vertical rotation axis 73, and the substrate standing device 71 rotates together with the rotating table 72 when the rotating table 72 rotates, The substrate mounting portion 80 may face all directions in the horizontal plane.

In the vacuum processing apparatus 63, in order to form a multilayer film on a substrate, first, a substrate (not shown) in a horizontal state is transported into a vacuum chamber 61 from a transfer chamber 70 to a transfer mechanism (not shown), and a substrate mounting portion is provided. It keeps close to 80.

Predetermined and are evacuating that the vacuum chamber 61, followed by standing to the cathode _{(68: 1)} the direction the board mounting portion 80 in which the substrate is maintained when the substrate standing on end, the surface of the substrate parallel to the cathode _{(68: 1)} Are arranged opposite.

In this state, a predetermined voltage is applied to the cathode 68 ₁ . The cathode 68 _{1 is} provided with a Mo (molybdenum) target (not shown). When a voltage is applied, the Mo target is sputtered to form a first layer of thin film Mo on the surface of the substrate in a standing state. When a Mo thin film having a predetermined film thickness is formed on the substrate surface, the application of voltage to the cathode 68 ₁ is stopped to stop sputtering.

Next, the rotating table 72 is rotated counterclockwise in the drawing, and the substrate mounting portion 80 in the standing state is rotated. Then, since the substrate surface held by the substrate mounting portion 80 can also face all directions within the horizontal plane, the substrate mounting portion 80 rotated counterclockwise in the drawing is parallel to the cathode 68 ₂ after a predetermined time. Are arranged opposite. When it is opposed, the rotation of the rotating table 72 is stopped to hold the substrate mounting portion 80 as it is.

In this state, by applying a predetermined voltage to the cathode (68 _2), it is a Ti target in the cathode (68 ₂₎ sputtering a thin film (Al) of the second layer is formed on the substrate surface in the standing state. When the Al thin film of predetermined thickness formed on the surface of the substrate, and stops the voltage application to the cathode (68 ₂₎ to stop the sputtering process.

Then, again to rotate the substrate mounting portion 80 to rotate the turntable 72, facing each other in parallel to the substrate surface in the cathode (68 _3), and applying a voltage to the cathode (68 ₃₎ to the cathode (68 ₃₎ Is sputtered onto the surface of the substrate to form the third layer of thin film Ti. When a thin film of Ti having a predetermined thickness is formed, the application of voltage to the cathode 68 ₃ is stopped to stop sputtering.

Subsequently, the cathode (68 _4), re-rotating the turntable 72 to rotate the board mounting portion 80, a cathode and (68 ₄₎ disposed parallel to the opposite surface of the substrate, a voltage is applied to the cathode (68 _4), The target is sputtered on the substrate surface to form a fourth layer thin film (ITO), and when an ITO (indium, tin oxide) thin film having a predetermined film thickness is formed, the application of voltage to the cathode 68 ₄ is stopped to stop sputtering.

In this way, when four thin films are formed on the substrate surface, the substrate standing apparatus 71 makes the substrate mounting portion 80 horizontal. The board | substrate which became a horizontal state is taken out from the vacuum tank 61 with the conveyance system not shown, is conveyed to the conveyance chamber 70, and is taken out of an apparatus.

As described above, the vacuum processing apparatus 63 according to another embodiment of the present invention has a swivel 72, and when the swivel 72 is rotated, the substrate mounting portion 80 in a vertical state is moved in all directions in a horizontal plane. Can be turned to.

For this reason, by placing a plurality of cathodes around a swivel table, the surface of the substrate can be arranged so as to face the plurality of cathodes in parallel so that the cathode and the substrate surface can be arranged in parallel to each other. The target can be sputtered to form a multilayer film, and a small throughput and a high throughput sputtering device can be obtained.

In the vacuum processing apparatus 63 described above, a pentagonal vacuum chamber 61 is used, and four cathodes 68 ₁ to 68 ₄ are arranged on four surfaces of the inner wall surface thereof. The cathodes 68 ₁ , 68 ₂ , 68 ₃ may be mounted one by one on the wall surfaces of three rectangular vacuum chambers, for example, as seen from above. 7-9 is a perspective view explaining the state.

In this case, the board | substrate 80a is carried in in the vacuum chamber not shown by the conveyance arm 87 previously, and is moved to the board | substrate mounting apparatus 82 arrange | positioned in a vacuum chamber, and the board | substrate mounting part 80 is carried out by the board | substrate mounting apparatus 82. ), The substrate 80a is mounted, and the substrate 80a is held in close contact with the substrate mounting portion 80. In this state, when the standing board mounting portion 80 in the vertical direction, the substrate (80a) are opposed to each other in parallel with the cathode (68 ₁₎ ((a) in FIG. 7).

Subsequently, the substrate mounting portion 80 is tilted by a predetermined angle (10 ° to 20 °) (Fig. 7 (b)), and the substrate mounting part 80 is rotated 90 ° in the horizontal plane (Fig. 7 (c)), again. The board | substrate mounting part 80 stands up in a perpendicular direction (FIG. 8 (d)). Then, the substrate 80a is disposed to be parallel to the cathode 68 ₂ .

Next, the substrate mounting portion 80 is inclined by a predetermined angle (Fig. 8 (e)), the substrate mounting portion 80 is rotated 90 degrees in the horizontal plane (Fig. 8 (f)), and the substrate mounting portion 80 is again rotated. It stands up in a vertical direction (FIG. 9G). Then, substrate (80a) is disposed opposite in parallel to the cathode (68 _3).

Thereafter, when the substrate mounting portion 80 is tilted by a predetermined angle (Fig. 9 (h)) and the substrate mounting portion 80 is rotated 90 degrees in the horizontal plane to bring the substrate mounting portion 80 into a horizontal state, the substrate 80a becomes It becomes a horizontal state (FIG. 9 (i)). Then, the board | substrate 80a is raised by the board | substrate mounting apparatus 82, it moves to the conveyance arm 87, and is carried out out of a vacuum chamber.

A predetermined voltage to the cathode (68 ₁ - 68 ₃₎ in the according to the vacuum processing device shown in the aforementioned FIG. 7 to FIG. 9, the substrate (80a) are opposed to each other in parallel to each cathode (68 ₁ - 68 ₃₎ state By applying and sputtering the targets in each of the cathodes 68 ₁ to 68 ₃ , respectively, a three-layer film can be formed in one vacuum chamber.

Moreover, what is necessary is just a structure by which the cathode is arrange | positioned on the inner wall surface using a polygonal vacuum chamber, For example, you may make it arrange | position the cathode on five surfaces of the inner wall surface, respectively, using a hexagonal vacuum chamber. In this case, five laminated films can be formed on the substrate in one vacuum chamber.

Hereinafter, other embodiment of this invention is described.

Reference numeral 74 in Fig. 10A shows a vacuum processing apparatus according to another embodiment of the present invention. This vacuum processing apparatus 74 has a vacuum chamber 75 and a conveyance chamber 79.

One wall surface of the vacuum chamber 75 faces the transfer chamber 79, and one window 75a, 75b, 75c is provided on three wall surfaces of the vacuum chamber 75 that do not face the transfer chamber 79. It is installed. First to third frames 76 ₁ to 76 ₃ are disposed around each of the windows 75a, 75b and 75c, and first to third cathodes 78 ₁ to each of the frames 76 ₁ to 76 ₃ . 78. ₃₎ and is mounted, the surface is configured to face in the vacuum tank (75) through each window (75a, 75b, 75c) in the respective cathode (78 ₁ to 78 _3).

The vacuum chamber 75 is provided with a gas inlet and an exhaust port (not shown), and sputter gas can be introduced from the gas inlet port, and vacuum evacuated inside the vacuum chamber 75 by a vacuum pump (not shown). It is supposed to be.

Moreover, the board | substrate standing apparatus 81 is provided in the inner bottom face of the vacuum chamber 75. As shown in FIG.

The standing board device 81 has a, rotating table 84 and the first to fourth substrate mounting portion (82 ₁ to 82 _4), as shown in (b), (c) of Fig.

The rotating table 84 is arrange | positioned at the inner bottom face of the vacuum chamber 75, and is made to be able to rotate in a horizontal plane about the rotating shaft 77 of a perpendicular direction.

As shown in Fig. 10C, the first to fourth substrate mounting portions 82 ₁ to 82 ₄ are in a horizontal state, and the first, second, third, and fourth substrate mounting portions 82 are placed from above. ₁ , 82 ₂ , 82 ₃ , 82 ₄ are disposed on the rotary table 84 so as to overlap. First through fourth board mounting portion (82 ₁ to 82 _4), wherein the fourth substrate mounting portion (82 ₄₎ has been formed into a plate shape, and the other three substrates carrying platform (82 ₁ to 82 ₃₎ are teulsang disposed at the bottom It is molded.

First through fourth board mounting portion (82 ₁ to 82 ₄₎ side end, the respective first to fourth, and the drive shaft (85 ₁ to 85 ₄₎ is mounted, the first to fourth drive shaft (85 ₁ to 85 ₄₎ of the If rotated by a predetermined angle, and around the respective central axis (76 ₁ to 76 ₄₎ to the standing of the first to fourth substrate mounting portion (82 ₁ to 82 ₄₎ so that the state of standing at 70 ° ~ 90 ° range It is.

The first through fourth mounting substrate (82 ₁ to 82 ₄₎ is arranged to face each other are in different directions from each other stand in the other direction, and each board mounting portion (82 ₁ to 82 _4). In the first state of the first through third substrate mounting portion (82 ₁ to 82 ₃₎ when the standing, each of the first to third cathode (78 ₁ to 78 ₃₎ are spared on a fourth substrate mounting portion (82 ₄₎ is the standing If so, the transfer chamber 79 is faced.

The first to fourth is to substrate mounting portion (82 ₁ to 82 ₄₎ When the rotating table 84 is rotating, and rotates with the rotating platform 84, can escape in all directions in the horizontal plane.

The case where a three layer film is formed on a some board | substrate using the vacuum processing apparatus 74 of this embodiment which has the above-mentioned substrate standing apparatus 81 is demonstrated below. In this case, the inside of the vacuum chamber 75 is evacuated beforehand, and sputter gas is introduce | transduced from the gas introduction port. In this state, mounted on the transfer chamber of the substrate (90 ₁₎ of 1-th with a horizontal state by the transporting mechanism (not shown) from (79) brought into the vacuum tank 75, and the first substrate mounting portion (82 ₁₎ and, to maintain the first substrate mounting portion (82 ₁₎ has a substrate (90 ₁₎ th contact of the first ((a) in Fig. 11).

When standing the first board mounting portion (82 ₁₎ in this state, is disposed opposite the surface of the substrate (90 ₁₎ of 1-th through the window (75a) parallel to the first cathode (78 ₁₎ (Fig. 11 ( b)).

Next, the application of a predetermined voltage to the first cathode _{(78: 1).} A first cathode (78 ₁₎ has a not Mo (molybdenum) target are shown installed, when a voltage is applied to the Mo target is sputtered thin film (Mo) of the first layer is formed on the substrate (90 ₁₎ surface of the 1 th . When the thin film of the Mo predetermined thickness formed on the surface of the substrate, and stops the voltage application to the first cathode _{(78: 1)} to stop the sputtering process.

Then, the substrate (90 ₂₎ of the 2-th with a horizontal state by the transporting mechanism (not shown) from the transfer chamber 79 to the vacuum chamber a second substrate carrying platform is level, and brought into the 75 (82 ₂₎ Mount. A second substrate mounting portion (82 ₂₎ is maintained in close contact with the substrate (90 ₂₎ of the mounted second th.

Next, and the swivel 72 and the rotation axis 77 is rotated 90 °, first to rotate by a fourth substrate mounting portion (82 ₁ to 82 ₄₎ to 90 °. Then, the first substrate surface of a first substrate (90 ₁₎ of th held in the mounting portion (82 ₁₎ is disposed in parallel to the second opposing the cathode (78 ₂₎ through a window (75b). In this state, when two standing the substrate mounting portion (82 _2), 2-th substrate (90 ₂₎ are disposed parallel opposite to the first cathode (78 ₁₎ through the window (75a) (in Fig. 11 (c )).

In this state, the second to apply a predetermined voltage to the cathode (78 _2). The second surface of the cathode (78 ₂₎ has a not Al (aluminum) as a target are shown installed, applying a predetermined voltage to the second cathode (78 _2), the Al target is sputtered 1 th substrate (90 ₁₎ of The second layer thin film Al is formed on the substrate.

2 and at the same time applying a given voltage to the cathode (78 _2), the first applying a predetermined voltage to the cathode (78 _1), a Mo target in the first cathode (78 ₁₎ is sputtered, the first cathode (78 ₁ 1st layer thin film Mo is formed in the surface of the _2nd board | substrate 902 arrange | positioned opposingly. In this manner, by simultaneously applying a predetermined voltage to each of the first and second cathodes 78 ₁ and 78 ₂ , the film can be simultaneously formed on both sides of the _first substrate 90 ₁ and the second substrate 90 ₂ . .

When the second layer thin film Al and the first layer thin film Mo are respectively formed on the first substrate 90 ₁ and the second substrate 90 ₂ by a predetermined film thickness, the first and second cathodes 78 ₁ , 78 ₂ ) to stop the sputtering by stopping the voltage application.

Then, with the transfer chamber with a horizontal state by the substrate (90 ₃₎ of the 3-th horizontal state by the transporting mechanism (not shown) brought into the vacuum tank (75) from (79) a third substrate mounting portion (82 ₃₎ Let's do it. A third substrate mounting portion (82 ₃₎ is kept in close contact with the substrate (90 ₃₎ of the mount 3 th.

Next, and the swivel 72 is rotated 90 °, first to rotate by a fourth substrate mounting portion (82 ₁ to 82 ₄₎ to 90 °. Then, the first substrate mounting portion (82 ₁₎ and the third placed in parallel to face the cathode (78 ₃₎ 1 through the substrate (90 ₁₎ surface of the window (75c) of the th, the second substrate mounting portion (82 held in ₂₎ the surface of the second substrate (90 ₂₎ of th held in the counter is arranged in parallel with the second cathode (78 _2). In this state, when the third rising the substrate mounting portion (82 _3), the substrate 3-th (90 ₃₎ are opposed to each other in parallel to the first cathode (78 ₁₎ ((d) in Fig. 11).

In this state, the third applying a predetermined voltage to the cathode (78 _3), a thin film (TiN) of the third layer is formed on the surface of the first substrate (90 ₁₎ th by reactive sputtering. The detail in which a TiN film is formed by reactive sputtering is mentioned later.

In this way the third cathode (78 ₃₎ on and simultaneously applying a given voltage, the first, second, by applying a predetermined voltage, respectively to the cathode (78 _1, 78 _2), first and second cathodes (78 _1, 78 ₂ ) The Mo target and Al target in each are sputtered, the 1st-layer thin film Mo is formed in the surface of the _3rd board | substrate 903 arrange | positioned facing the 1st cathode 78 ₁ , and the 2nd cathode ( The second layer thin film Al is formed on the surface of the second substrate 90 ₂ disposed opposite to the 78 ₂ ). In this manner, by simultaneously applying a predetermined voltage to the first to third cathodes 78 ₁ to 78 ₃ , it is possible to simultaneously form a film on all surfaces of the _first to _third substrates 90 ₁ to 90 ₃ .

The third layer thin film (TiN), the second layer thin film (Al), and the first layer thin film (Mo) are respectively provided on the first, second and third substrates 90 ₁ , 90 ₂ , 90 ₃ by a predetermined film thickness. When formed, the application of voltage to the first to third cathodes 78 ₁ to 78 ₃ is stopped to stop sputtering.

Then, the substrate (90 ₁₎ of 1-th by the transport device the first substrate and the mounting portion (82 ₁₎ in a horizontal state, three-layer film (not shown), and a substrate (90 ₁₎ of 1-th formed horizontally vacuo the export to the transport chamber (79) from the tank (75), and brought to the substrate (90 ₄₎ of the 4 th, the horizontal state by the transporting mechanism (not shown) from the transfer chamber 79 into the vacuum tank 75 is horizontally the first substrate is maintained in close contact with the first mounting portion (82 ₁₎ ((e) in Fig. 11).

As described above, in the vacuum processing apparatus 74 shown in FIG. 10A, when the film forming process is performed on a plurality of substrate surfaces, the first layer thin film Mo is formed on the first substrate 90 ₁ . When the second substrate 90 ₂ is brought into the vacuum chamber, the second thin film Al is formed on the _first substrate 90 ₁ while the first thin film Al is formed on the second substrate 90 ₂ . (Mo) can be formed, and each time a thin film is formed one by one, the following substrates can be carried in a vacuum chamber to form thin films sequentially, thereby reducing the time required for film formation.

However, in the sputtering apparatus, when a new target is installed on the cathode, if sputtering is performed without any treatment, the discharge is not stabilized due to the poor surface condition, and arc discharge occurs on the surface, resulting in sputtering. There is a problem such as deterioration or peeling of the film.

Fig. 12 shows the relationship between the accumulated power supplied to the target and the number of occurrences of arc discharge from the time when the inside of the vacuum chamber provided with the target is the atmosphere and then the vacuum chamber is brought into the vacuum state again. According to FIG. 12, when the integrated power is 1 kWh or less, the number of arc discharges is 100 times or more for 1 minute, and arc discharge occurs frequently. When the integrated power is 20 kWh or more, up to 2 times or less for 1 minute. It is understood that the number of occurrences of arc discharge increases when the integrated power is reduced and the number of occurrences of arc discharge decreases when the integrated power increases.

As a method of increasing the integrated power of the target to reduce the number of occurrences of arc discharge, a predetermined amount of sputtering of the target (hereinafter referred to as a pre-sputter) is widely used.

Conventionally, a dummy glass substrate is used for a presputter, and the thin film was formed in the surface. Since glass substrates are weak in strength, only a thin film having a thickness of about 1 μm can be formed, and a thick film having a thickness of about 50 μm needs to be formed in order to perform sufficient pre-sputtering. It was necessary to form the film while changing. Therefore, conventionally, a long time was required for the pre-sputter by the replacement time of the dummy glass substrate.

However, also a vacuum processing apparatus 74 shown in FIG. 10 (a) in the fourth substrate mounting portion (82 ₄₎ a fourth substrate mounting portion (82 formed in the plate at the time, pre-sputtering because it is formed into a plate shape as described above, ₄₎ to a standing it can be opposite to the target and, by sputtering the target to form a film on the surface of the fourth substrate mounting portion (82 _4).

In addition, the fourth is made of Al sprayed surface of the substrate mounting portion (82 _4), the film may peel off measures are being carried out. For this reason, even by the pre-sputter film is formed on the surface of the fourth substrate mounting portion (82 ₄₎ to peel off the thin film does not contaminate the apparatus. In this way, the fourth can be further without the use of cosmetic glass substrate pre-sputtered by the substrate mounting portion (82 _4).

As described above, in the vacuum processing apparatus 74 shown in Fig. 10A, it is not necessary to use the dummy glass substrate, so that the replacement time of the dummy substrate becomes unnecessary, so that the time required for the presputter can be shortened. have.

And, (a) a vacuum processing apparatus 74 shown in Fig. 10, there is formed in a plate-shaped fourth substrate mounting portion (82 _4), the present invention is not limited to this, the metal plate is detachably mountable to a substrate mounting on the frame It may be configured to be mounted. In this case, the metal plate can be replaced at the time of maintenance of the apparatus.

In addition, an O-shaped ring is provided in the vacuum chamber 75 of the vacuum processing apparatus 74 shown in FIG. 10A to perform the reactive sputtering described above. 13 is a sectional view of principal parts of the vacuum processing apparatus 74 in which the O-shaped ring 99 is provided.

And 13, the substrate placing portion 82, the third cathode (78 _3), only a denotes a substrate mounting portion 82 is parallel to the oppositely disposed to the third cathode (78 ₃₎ to the standing by a drive mechanism (84a) state It is shown. O-ring (99) which are installed on the inner wall of the vacuum chamber 75 to surround the periphery of the window that faces the third cathode (78 _3), the first and second facing the cathode (78 _1, 78 ₂₎ It is not installed around the window.

When the O-ring (99) is provided that as a substrate mounted portion 82 in a state of holding the substrate 90 is rising to the third cathode (78 ₃₎ and disposed opposite the substrate mounting portion 82, the frame (76 ), the third cathode (78 ₃₎ that the space (94) is hermetically divided into I, the atmosphere in the space (94) adapted to be isolated from the atmosphere in the vacuum chamber (75).

The frame 76 is provided with an exhaust port (not shown) and a gas inlet port, and a gas inlet system 98 provided outside the vacuum chamber 75 is connected to the gas inlet port. The sputtering gas and reactive gas such as N ₂ can be introduced into the space 94 from the gas inlet, and vacuum exhausted from the exhaust port.

In this state, the third and applies a predetermined voltage to the cathode (78 _3). The third cathode (78 _3), there is no Ti (titanium), a target that is shown to be installed, and the third applying a predetermined voltage to the cathode (78 _3), Ti target is sputtered, sputtered Ti a N ₂ gas and reaction By the reactive sputtering described above, a TiN film is formed on the surface of the substrate 90.

A substrate mounting portion 82, a frame 76, a third, and is hermetically that the cathode (78 _{3) The} space 94 is delimited by, a sputtering gas and a reactive gas introduced into the space 94 is the vacuum chamber 75 in does not enter, the third cathode (78 ₃₎ on at the same time as the reactive sputtering applying a predetermined voltage, the first and second cathodes (78 _1, 78 ₂₎ each cathode is applied a predetermined voltage, and the ( The Mo film and the Al film can be formed on the substrate surface opposite to 78 ₁ , 78 ₂ ).

The vacuum processing apparatus 74 shown in FIG. 10A has a cathode as a processing means and constitutes a sputtering apparatus. The present invention is not limited to this, and other film forming apparatuses such as a CVD apparatus and the like. You may apply.

In addition, the third cathode (78 ₃₎ is installed, the O-ring (99) around the installed window (75c) and the third cathode (78 ₃₎ only in a tight state the first and second cathode and the other treatment Although the present invention is not limited to this, the O-shaped ring may be provided in any window, and if necessary, the O-shaped ring may be provided in all of the windows 75a, 75b, and 75c.

Further, the first to third cathodes 78 ₁ to 78 ₃ face each other on three surfaces of the inner wall surface using a rectangular vacuum chamber 75. The vacuum chambers are polygonal and installed on the wall surfaces, respectively. It is sufficient if it is a structure. For example, a cathode may be arranged on five surfaces of the inner wall surface using a hexagonal vacuum chamber.

In addition, although the O-shaped ring 99 is provided in the inner wall of the vacuum chamber 75 in FIG. 13, this invention is not limited to this, You may provide an O-shaped ring in the board | substrate mounting part 82 side.

Also, I am using the O-ring as a sealing member, the substrate placing portion 82, a frame 76, the third cathode (78 ₃₎ space that is divided into 94 is not limited thereto as long as it can hermetically my It is not.

A compact, high throughput vacuum processing apparatus is obtained. In particular, when applied to a sputtering apparatus, a multilayer film can be formed in a single vacuum chamber.

In addition, the pre-sputter can be performed without using a dummy glass substrate, and the treatment atmosphere can be treated in a single vacuum chamber.

Claims (17)

A board mounting part to mount a board, An arm part provided at one end by the rotating member; In the substrate standing apparatus provided on the other end of the arm portion, having a drive shaft configured to be rotatable about a central axis line, In the case where the substrate mounting portion stands up from the horizontal posture of the substrate mounting portion and the arm portion horizontally, the substrate standing apparatus transmits the rotational force of the drive shaft to the arm portion and stands the substrate mounting portion together with the arm portion. The first standing posture, And a second standing posture for transmitting the rotational force of the drive shaft to the substrate mounting portion through the rotating member and standing the substrate mounting portion while maintaining the arm portion in a horizontal state. It has at least two substrate mounting portions overlapping up and down in a horizontal position, Each of the substrate mounting portion is provided with a drive shaft, A substrate mounting apparatus configured to stand each of said substrate mounting portions by rotating this drive shaft, The substrate mounting portion disposed above the substrate mounting portion is formed with a substrate passing hole for passing the substrate in a horizontal state in a vertical direction, and a hook is provided at the periphery of the substrate passing hole, and the hook is placed in the substrate passing hole. And a substrate standing apparatus configured to mount the substrate on the hook when it protrudes. 3. The substrate according to claim 2, wherein when the substrate mounting portions overlap each other up and down, the tip of the substrate lift pins disposed below the substrate mounting portions can rise to an upper position than the substrate mounting portions. Standing device. A vacuum processing apparatus having a vacuum chamber capable of evacuating a vacuum and a substrate standing apparatus disposed in the vacuum chamber, The substrate standing apparatus includes a substrate mounting portion for mounting a substrate; An arm part provided at one end by the rotating member; A substrate mounting apparatus having a drive shaft installed at the other end of the arm portion and configured to be rotatable about a central axis, In the case where the substrate mounting portion stands up from the horizontal posture of the substrate mounting portion and the arm portion horizontally, the substrate standing apparatus transmits the rotational force of the drive shaft to the arm portion and stands the substrate mounting portion together with the arm portion. The first standing posture, And a second standing posture for transmitting the rotational force of the drive shaft to the substrate mounting portion through the rotating member, and standing the substrate mounting portion while maintaining the arm portion in a horizontal state. The method of claim 4, wherein Has an additional swivel, The swivel table is disposed at the bottom of the vacuum chamber, is configured to rotate in a horizontal plane, The substrate standing apparatus is mounted on the rotating table, when the rotating table is rotated, the vacuum processing apparatus, characterized in that configured to rotate with the rotating table. A vacuum processing apparatus having a vacuum chamber capable of evacuating a vacuum and a substrate standing apparatus disposed in the vacuum chamber, The substrate rising device has at least two substrate mounting portions overlapping up and down in a horizontal position, Each of the substrate mounting portion is provided with a drive shaft, A substrate mounting apparatus configured to stand each of the substrate mounting portions by rotating the drive shaft, The substrate mounting portion disposed above the substrate mounting portion is formed with a substrate passing hole for passing the substrate in a horizontal state in a vertical direction, and a hook is provided at the periphery of the substrate passing hole, and the hook is placed in the substrate passing hole. And, when projecting, to mount the substrate on the hook. The method of claim 6, Has an additional swivel, The swivel table is disposed at the bottom of the vacuum chamber, is configured to rotate in a horizontal plane, The substrate standing apparatus is mounted on the rotating table, when the rotating table is rotated, the vacuum processing apparatus, characterized in that configured to rotate with the rotating table. It has a plurality of processing means on the side wall, and has a vacuum chamber capable of evacuating the vacuum, and a substrate standing device, the substrate standing device can be in a horizontal state or a standing state by holding the substrate, the substrate in the standing state And is disposed in the vacuum chamber so as to face the plurality of processing means, respectively. The method of claim 8, Has an additional swivel, The swivel table is disposed at the bottom of the vacuum chamber, is configured to rotate in a horizontal plane, The substrate standing apparatus is mounted on the rotating table, when the rotating table is rotated, the vacuum processing apparatus, characterized in that configured to rotate with the rotating table. 9. A vacuum processing apparatus according to claim 8, wherein said processing means is a sputtering cathode. Vacuum chamber which can evacuate, A window provided on the side wall of the vacuum chamber, A frame mounted around the window, Processing means mounted to the frame and disposed to face the window; A swivel table disposed at the bottom of the vacuum chamber, It has a plurality of substrate standing apparatus installed on the rotation target, The substrate standing apparatus may be in a horizontal state or a standing state by holding a substrate, and configured to oppose the substrate to the processing means in the standing state. The rotating table is a vacuum processing apparatus, characterized in that configured to rotate in a horizontal plane with the substrate standing apparatus. The vacuum processing apparatus according to claim 11, wherein said processing means is a sputtering cathode. The method of claim 11, wherein the plurality of substrate rising devices have a substrate mounting portion, The substrate mounting portion may be in a horizontal state or in an upright state, and configured to face the processing means through the window in the upright state. Of the substrate mounting portion, at least one substrate mounting portion has a shielding portion, And the shielding portion is configured to cover the window in a state where the substrate-mounting portion having the shielding portion stands up. The vacuum processing apparatus according to claim 13, wherein the shield is formed in a plate shape. The vacuum processing apparatus according to claim 13, wherein when the substrate is opposed to the processing means in the standing state, the space formed between the mold, the processing means, and the substrate mounting portion can be made airtight. The sealing member of claim 15, wherein either or both of the inner wall of the vacuum chamber or the substrate mounting portion is provided. And the sealing member is arranged to be disposed between the inner wall of the vacuum chamber and the substrate mounting portion when the substrate is opposed to the processing means in a standing state. The vacuum processing apparatus according to claim 15, wherein the processing means is a sputtering cathode and is configured to introduce a sputtering gas into a space formed between the frame, the processing means, and the substrate mounting portion.