KR20000052280A - Amorphous silicon solar cell - Google Patents
Amorphous silicon solar cell Download PDFInfo
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- KR20000052280A KR20000052280A KR1019990013538A KR19990013538A KR20000052280A KR 20000052280 A KR20000052280 A KR 20000052280A KR 1019990013538 A KR1019990013538 A KR 1019990013538A KR 19990013538 A KR19990013538 A KR 19990013538A KR 20000052280 A KR20000052280 A KR 20000052280A
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 39
- 230000007547 defect Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000010248 power generation Methods 0.000 claims description 15
- 230000006641 stabilisation Effects 0.000 abstract description 12
- 238000011105 stabilization Methods 0.000 abstract description 12
- 239000011521 glass Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H01L31/075—
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- H01L31/0445—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은, 특히 태양전지 발전시스템에서 사용되는 비정질실리콘 태양전지에 관한 것이다.The present invention relates in particular to amorphous silicon solar cells for use in solar cell power generation systems.
종래, 태양전지로서는, 도 2 에 도시된 구성의 것이 알려져 있다 (특허 제 2530408 호)Conventionally, as the solar cell, one having the configuration shown in Fig. 2 is known (Patent No. 2530408).
도면중의 부호 1 은 유리기판 (또는 투명필름) 이다. 이 유리기판 (1) 상에는, 투명전극 (2), p 형 a-SixC1-x: H층 (p층) (3), i 형 a-Si : H 층 (i층) (4), n 형 a-Si:H층 (n층) (5) 및 금속전극 (6) 이 순차 형성되어 있다. 한편, 윈도우층인 상기 p 층 (3) 은, p 층 (3) 의 광학적금제대 폭을 넓이기 위하여, 비정질실리콘카바이트로 구성되어 있다. 또, p 층 (3) 의 가전자제어용을 위하여, p 층 (3) 의 형성시 도핑가스로서 원료가스에 디보란 (B2H6) 을 첨가하고 있다. 이와같은 구성의 태양전지에 있어서, 광이 유리기판 (1) 측에서 입사된 후, 투명전극 (2), p 층 (3) 을 통과하여 i 층 (4) 에 도달하며, 이 i 층 (4) 에서 광에너지가 전기에너지로 변환된다.Reference numeral 1 in the drawings denotes a glass substrate (or transparent film). On this glass substrate 1, a transparent electrode 2, a p-type a-Si x C 1-x : H layer (p layer) (3), an i-type a-Si: H layer (i layer) (4) , an n-type a-Si: H layer (n layer) 5 and a metal electrode 6 are sequentially formed. On the other hand, the said p layer 3 which is a window layer is comprised from amorphous silicon carbide in order to widen the width | variety of the optical loading band of the p layer 3. As shown in FIG. Further, for the valence control of the p layer 3, diborane (B 2 H 6 ) is added to the raw material gas as a doping gas when the p layer 3 is formed. In the solar cell having such a configuration, after light is incident on the glass substrate 1 side, the light passes through the transparent electrode 2 and the p layer 3 to reach the i layer 4, and the i layer 4 ) Is converted into electrical energy.
한편, 도 2 의 태양전지에 있어서, i 층 (4) 의 결함밀도가 1015개/cc 이상에서는, 단일형 비정질실리콘 태양전지의 경우, 초기효율을 높이기 위해서는 i 층 (4) 의 막두께를 400 nm 이상으로 두껍게 해야한다 (도 3 참조). 그러나, i 층 (4) 의 막두께를 이와같이 두껍게 할 경우, i 층 (4) 의 형성에 많은 시간을 필요로 하여, 생산성이 저하된다는 문제가 발생한다.On the other hand, in the solar cell of FIG. 2, when the density of defects in the i layer 4 is 10 15 pieces / cc or more, in the case of a single amorphous silicon solar cell, the film thickness of the i layer 4 is 400 in order to increase the initial efficiency. Should be thicker than nm (see FIG. 3). However, when the film thickness of the i layer 4 is thickened in this way, a large amount of time is required for the formation of the i layer 4, which causes a problem that productivity is lowered.
그러나, i 층 (4) 을 두껍게 하여 초기효율을 높여도 광열화율이 커지기 때문에, 안정화효율은 낮아진다. 한편, i 층 (4) 을 얇게하면, 열화율이 작아지는데, 초기효율이 작기 때문에, 도 4 에 도시된 바와 같이 안정화효율은 향상되지 않는다.However, even if the i layer 4 is thickened to increase the initial efficiency, the light deterioration rate is increased, so that the stabilization efficiency is lowered. On the other hand, when the i layer 4 is thinned, the deterioration rate decreases, but since the initial efficiency is small, the stabilization efficiency does not improve as shown in FIG.
본 발명은 이러한 사정을 고려하여 이루어진 것으로, 발전막을 구성하는 i 형의 수소화비정질실리콘층의 결함밀도를 1015개/cc 미만으로 구성함으로써, 종래에 비하여 생산성을 저하시키지 않고 초기효율을 높임과 동시에, 높은 안정화효율을 얻을 수 있는 비정질실리콘 태양전지를 제공하는 것을 목적으로 한다.The present invention has been made in consideration of the above circumstances, and by configuring the density of defects of the hydrogenated amorphous silicon layer of i-type constituting the power generation film to less than 10 15 pieces / cc, it is possible to increase the initial efficiency without lowering the productivity as compared with the conventional art. It is an object of the present invention to provide an amorphous silicon solar cell capable of obtaining high stabilization efficiency.
또, 본 발명은, i 형의 수소화비정질실리콘층의 두께를 300nm 이하로 함으로써, 종래에 비하여 생산성을 향상시킬 수 있는 비정질실리콘 태양전지를 제공하는 것을 목적으로 한다.Moreover, an object of this invention is to provide the amorphous silicon solar cell which can improve productivity compared with the past by making thickness of the i-type hydrogenation amorphous silicon layer 300 nm or less.
본 발명은, 투명기판과, 이 투명기판상에 형성된 투명전극과, 이 투명전극상에 형성된 발전막과, 이 발전막상에 형성된 이면전극을 구비하며,The present invention includes a transparent substrate, a transparent electrode formed on the transparent substrate, a power generation film formed on the transparent electrode, and a back electrode formed on the power generation film,
상기 발전막이 p 형/i 형/n 형 또는 n 형/i 형/p 형의 수소화비정질실리콘층을 순차 적층한 것으로 구성되며, 또 i 형의 수소화비정질실리콘층의 결함밀도가 1015개/cc 미만인 것을 특징으로 하는 비정질실리콘 태양전지이다.The power generation film is composed of p-type / i-type / n-type or n-type / i-type / p-type hydrogenated amorphous silicon layer sequentially laminated, and the defect density of the i-type hydrogenated amorphous silicon layer is 10 15 pieces / cc. An amorphous silicon solar cell, characterized in that less than.
본 발명에 있어서, i 형의 수소화비정질실리콘층 (i 층) 의 결함밀도를 1015개/cc 미만으로 규정한 이유는, 결함밀도가 이러한 수치이상인 경우, 광조사후의 안정화결함밀도가 커지며, 셀에 적용한 경우 높은 안정화효율을 얻을 수 없기 때문이다. 여기서 「안정화」란 20∼100 시간 정도를 나타낸다.In the present invention, the reason for defining the defect density of the hydrogenated amorphous silicon layer (i layer) of i type to be less than 10 15 / cc is that when the defect density is higher than this value, the stabilization defect density after light irradiation becomes large, and the cell This is because high stabilization efficiency cannot be obtained when applied to. "Stabilization" shows here about 20 to 100 hours.
본 발명에 있어서, i 층의 두께는 300 nm 이하인 것이 바람직하다. 이 이유는, 두께가 300 nm 이하인 경우, 광열화율이 작고, 고효율화할 수 있기 때문이다 (도 3, 도 6 참조).In the present invention, the thickness of the i layer is preferably 300 nm or less. This is because when the thickness is 300 nm or less, the light deterioration rate is small and the efficiency can be increased (see Figs. 3 and 6).
도 1 은 본 발명의 1 실시예에 관련된 비정질실리콘 태양전지의 단면도.1 is a cross-sectional view of an amorphous silicon solar cell according to an embodiment of the present invention.
도 2 는 종래의 비정질실리콘 태양전지의 단면도.2 is a cross-sectional view of a conventional amorphous silicon solar cell.
도 3 은 종래와 본 발명에 관련된 태양전지에 있어서의 i 층 막두께와 초기효율과의 관계를 도시한 특성도.Fig. 3 is a characteristic diagram showing the relationship between the i-layer film thickness and the initial efficiency in the solar cell according to the prior art and the present invention.
도 4 는 종래와 본 발명에 관련된 태양전지에 있어서의 i 층 막두께와 안정화효율과의 관계를 도시한 특성도.4 is a characteristic diagram showing the relationship between the i-layer film thickness and the stabilization efficiency in the solar cell according to the prior art and the present invention.
도 5 는 종래와 본 발명에 관련된 태양전지에 있어서의 광조사시간과 i 층 중의 결함밀도와의 관계를 도시한 특성도.Fig. 5 is a characteristic diagram showing the relationship between the light irradiation time and the defect density in the i layer in the solar cell according to the prior art and the present invention;
도 6 은 종래와 본 발명에 관련된 태양전지에 있어서의 i 층 막두께와 단락전류와의 관계를 도시한 특성도.Fig. 6 is a characteristic diagram showing the relationship between the i-layer film thickness and the short-circuit current in the solar cell according to the prior art and the present invention.
*도면의주요부분에대한간단한설명** Brief description of the main parts of the drawing
11: 유리기판 12: 투명전극11: glass substrate 12: transparent electrode
13: 발전막 13a: p 층13: power generation film 13a: p layer
13b: i 형 a-Si : H 층 13c: n 층13b: i type a-Si: H layer 13c: n layer
14: 이면전극14: back electrode
이하, 본 발명의 1 실시예에 관련된 비정질실리콘 태양전지에 대하여 도 1 을 참조하여 설명한다.Hereinafter, an amorphous silicon solar cell according to an embodiment of the present invention will be described with reference to FIG. 1.
도면 중의 부호 11 은, 투명기판으로서의 유리기판을 나타낸다. 이 유리기판 (11) 상에는 산화주석으로 이루어지는 투명전극 (12) 이 형성되어 있다. 이 투명전극 (12) 상에는, p 층 (13a), i 층 (13b) 및 n 층 (13c) 로 이루어지는 발전막 (13) 이 형성되어 있다. 여기서, p 층 (13a), i 층 (13b), n 층 (13c) 의 각각은, 수소화비정질실리콘 (a-Si:H) 층으로 각각 형성되어 있다. 또, i 층 (13b) 의 두께는 290 nm 이며, 그 결함밀도는 1015개/cc 미만이다. 상기 발전막 (13) 상에는, Al 로 이루어지는 이면전극 (14) 이 형성되어 있다.Reference numeral 11 in the figure denotes a glass substrate as a transparent substrate. On this glass substrate 11, a transparent electrode 12 made of tin oxide is formed. On this transparent electrode 12, a power generation film 13 composed of a p layer 13a, an i layer 13b, and an n layer 13c is formed. Here, each of the p layer 13a, the i layer 13b, and the n layer 13c is each formed of a hydrogenated amorphous silicon (a-Si: H) layer. In addition, the thickness of the i layer 13b is 290 nm, and the defect density thereof is less than 10 15 pieces / cc. On the power generation film 13, a back electrode 14 made of Al is formed.
이러한 구성의 비정질실리콘 태양전지는, 다음과 같이 제조한다.The amorphous silicon solar cell of such a structure is manufactured as follows.
우선, 투명전극 (12) 이 형성된 유리기판 (11) 을 중성세제, 초순수(超純水)로 순차 초음파세정하고, 표면에 부착된 오염물을 제거한다. 계속해서, 이 투명전극 (12) 상에 플라즈마 CVD 법으로 p 층 (13a), i 층 (13b) 및 n 층 (13c) 으로 이루어지는 발전막 (13) 을 형성한다. 각층 성막전에는 장치내의 압력이 5×10-7Torr 이하가 될때까지 터보분자 펌프로 진공배기함과 동시에, 기판온도를 소정온도 (150℃ 내지 180℃) 로 승온, 유지한다. p 층 성형시는 원료가스로서 SiH4, CH4, H2를, 도핑가스에 B2H6가스를 이용하며, i 층에는 원료가스로서 SiH4, n 층에는 원료가스로서 SiH4, H2를 이용하며, 도핑가스로서 PH3를 이용한다. 각층의 막두께는, p층:9.5nm, i층:290nm, n층:30nm 으로 한다. 이 발전막 (13) 상에 알루미늄 금속전극 (14) 을 진공증착법으로 형성하여, 비정질실리콘 태양전지를 제조한다.First, the glass substrate 11 having the transparent electrode 12 formed thereon is ultrasonically cleaned with a neutral detergent and ultrapure water to remove contaminants adhering to the surface. Subsequently, on the transparent electrode 12, a power generation film 13 composed of a p layer 13a, an i layer 13b and an n layer 13c is formed by plasma CVD. Before each layer is formed, the exhaust gas is evacuated by a turbomolecular pump until the pressure in the apparatus becomes 5 × 10 −7 Torr or less, and the substrate temperature is raised and maintained at a predetermined temperature (150 ° C. to 180 ° C.). In p-layer forming, SiH 4 , CH 4 , H 2 is used as the source gas, and B 2 H 6 gas is used for the doping gas, SiH 4 is used as the source gas for the i layer, and SiH 4 , H 2 is used as the source gas for the n layer. And PH 3 as the doping gas. The film thickness of each layer is p layer: 9.5 nm, i layer: 290 nm, n layer: 30 nm. An aluminum metal electrode 14 is formed on the power generation film 13 by a vacuum deposition method to produce an amorphous silicon solar cell.
이와 같이하여 제조되는 비정질실리콘 태양전지에 의하면, 이하에 서술하는 효과를 갖는다.According to the amorphous silicon solar cell manufactured in this way, it has the effect described below.
발전막 (13) 을 구성하는 i 층 (13b) 을 결함밀도 1015개/cc 미만의 수소화비정질실리콘층으로 함으로써, 도 5 에 도시된 바와같이, 종래에 비하여 광조사후의 안정화결함밀도도 작기 때문에, 셀에 적용했을 경우, 높은 안정화효율을 얻을 수 있다. 또, 저결함밀도막은 장파장광 (500∼700nm) 의 흡수계수가 크기때문에, i 층 (13c) 의 두께를 얇게 (종래: 약 400∼500nm, 본 발명 290nm) 해도, 출력전류의 저하가 작아 고효율화할 수 있다 (도 3, 도 6 참조).Since the i layer 13b constituting the power generation film 13 is a hydrogenated amorphous silicon layer having a defect density of less than 10 15 / cc, as shown in FIG. 5, the stabilization defect density after light irradiation is smaller than in the prior art. When applied to a cell, high stabilization efficiency can be obtained. In addition, since the low defect density film has a large absorption coefficient of long wavelength light (500 to 700 nm), even if the thickness of the i layer 13c is thin (formerly about 400 to 500 nm, 290 nm of the present invention), the output current decreases so that the efficiency is improved. (See FIG. 3, FIG. 6).
또한, i 층 (13c) 의 두께를 얇게하면, i 층 내부의 전계강도가 강해진 결과, 광열화를 한층 억제할 수 있고, 도 4 에 도시된 바와같이 높은 안정화효율을 얻을 수 있다. 또, 생산성을 높일 수 있다. 실제로 i 층 (13c) 의 두께가 300 nm 인 경우, 종래 (두께: 400∼500 nm) 의 3/4 정도로 되며, 약 2 할 정도 생산성을 향상시킬 수 있다.In addition, when the thickness of the i layer 13c is made thin, the electric field strength inside the i layer becomes stronger, so that photodeterioration can be further suppressed, and high stabilization efficiency can be obtained as shown in FIG. Moreover, productivity can be improved. In fact, when the thickness of the i layer 13c is 300 nm, it becomes about 3/4 of the conventional (thickness: 400-500 nm), and productivity can be improved about 20%.
상술한 바와같이, 본 발명에 의하면, 발전막을 구성하는 i 형의 수소화비정질실리콘층의 결함밀도가 1015개/cc 미만으로 구성함으로써, 종래에 비하여 생산성을 저하시키지 않고 초기효율을 높임과 동시에 높은 안정화효율을 얻을 수 있는 비정질실리콘 태양전지를 제공할 수 있다.As described above, according to the present invention, the defect density of the i-type hydrogenated amorphous silicon layer constituting the power generation film is less than 10 15 pieces / cc, so that the initial efficiency is increased while the productivity is not lowered as compared with the prior art. It is possible to provide an amorphous silicon solar cell that can obtain a stabilization efficiency.
또, 본 발명에 의하면, i 형의 수소화비정질실리콘층의 두께를 300nm 이하로 함으로써, 종래에 비하여 생산성을 향상시킬 수 있는 비정질실리콘 태양전지를 제공할 수 있다.Moreover, according to this invention, by making thickness of the i-type hydrogenation amorphous silicon layer 300 nm or less, the amorphous silicon solar cell which can improve productivity compared with the past can be provided.
Claims (2)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP937799 | 1999-01-18 | ||
| JP99-009377 | 1999-01-18 |
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| KR1019990013538A KR20000052280A (en) | 1999-01-18 | 1999-04-16 | Amorphous silicon solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100976594B1 (en) * | 2008-10-09 | 2010-08-17 | 주식회사 엔씰텍 | fabricating method of a solar cell |
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| JPS59201470A (en) * | 1983-04-08 | 1984-11-15 | Taiyo Yuden Co Ltd | Amorphous silicon solar battery |
| JPS61212070A (en) * | 1985-03-18 | 1986-09-20 | Kanegafuchi Chem Ind Co Ltd | Thin film semiconductor solar cell containing amorphous material |
| JPH01129470A (en) * | 1987-11-16 | 1989-05-22 | Fuji Electric Co Ltd | Amorphous semiconductor thin-film solar cell |
| JPH0271565A (en) * | 1988-09-06 | 1990-03-12 | Sanyo Electric Co Ltd | Photodetecting device |
| US5071490A (en) * | 1988-03-18 | 1991-12-10 | Sharp Kabushiki Kaisha | Tandem stacked amorphous solar cell device |
| JPH0982996A (en) * | 1995-09-08 | 1997-03-28 | Mitsui Toatsu Chem Inc | Amorphous thin film solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59201470A (en) * | 1983-04-08 | 1984-11-15 | Taiyo Yuden Co Ltd | Amorphous silicon solar battery |
| JPS61212070A (en) * | 1985-03-18 | 1986-09-20 | Kanegafuchi Chem Ind Co Ltd | Thin film semiconductor solar cell containing amorphous material |
| JPH01129470A (en) * | 1987-11-16 | 1989-05-22 | Fuji Electric Co Ltd | Amorphous semiconductor thin-film solar cell |
| US5071490A (en) * | 1988-03-18 | 1991-12-10 | Sharp Kabushiki Kaisha | Tandem stacked amorphous solar cell device |
| JPH0271565A (en) * | 1988-09-06 | 1990-03-12 | Sanyo Electric Co Ltd | Photodetecting device |
| JPH0982996A (en) * | 1995-09-08 | 1997-03-28 | Mitsui Toatsu Chem Inc | Amorphous thin film solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100976594B1 (en) * | 2008-10-09 | 2010-08-17 | 주식회사 엔씰텍 | fabricating method of a solar cell |
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