KR20000050747A - Apparaus and method for chemically and mechanically polishing wafer - Google Patents
Apparaus and method for chemically and mechanically polishing wafer Download PDFInfo
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- KR20000050747A KR20000050747A KR1019990000824A KR19990000824A KR20000050747A KR 20000050747 A KR20000050747 A KR 20000050747A KR 1019990000824 A KR1019990000824 A KR 1019990000824A KR 19990000824 A KR19990000824 A KR 19990000824A KR 20000050747 A KR20000050747 A KR 20000050747A
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- wafer
- slurry
- vacuum
- vacuum hole
- chuck
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- 238000005498 polishing Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000002002 slurry Substances 0.000 claims abstract description 54
- 239000000126 substance Substances 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- 238000001179 sorption measurement Methods 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 131
- 239000010410 layer Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 화학적 기계적 연마 장치 및 웨이퍼의 화학적 기계적 연마 방법에 관한 것으로, 더욱 상세하게는 웨이퍼 척에 형성된 진공홀을 진공압으로 만들어 웨이퍼를 흡착 고정한 후, 슬러리에 의하여 화학적 기계적 연마를 수행하고 화학적 기계적 연마가 수행된 웨이퍼를 웨이퍼 스테이지에 올려놓기 위하여 진공홀에 질소 가스를 분사한 후 순수를 진공홀에 분사하여 진공홀이 슬러리에 의하여 막히는 것을 방지한 화학적 기계적 연마 장치 및 웨이퍼의 화학적 기계적 연마 방법에 관한 것이다.The present invention relates to a chemical mechanical polishing apparatus and a method for chemical mechanical polishing of a wafer, and more particularly, by vacuum-pressure forming a vacuum hole formed in a wafer chuck to adsorb and fix a wafer, and performing chemical mechanical polishing by slurry and performing chemical mechanical polishing. In the chemical mechanical polishing apparatus and the chemical mechanical polishing method of the wafer to prevent the vacuum hole is clogged by the slurry by injecting nitrogen gas into the vacuum hole in order to place the wafer on which the polishing is performed on the wafer stage It is about.
일반적으로 반도체 칩은 금속 배선 패턴에 의해 상호 접속되는 도전 단자들을 갖는 디바이스들의 배열로 이루어진다. 특히 초대규모 집적(VLSI) 칩에서 이러한 금속 배선 패턴들은 다층으로 배선층을 형성하며, 각 배선층은 층간 절연막에 의해 다른 도전층과 절연되고, 서로 다른 배선층들을 전기적으로 연결할 필요가 있을 때에는 층간 절연막에 관통홀(via hole)을 형성하여 각 배선층들을 상호 접속한다.In general, a semiconductor chip consists of an arrangement of devices with conductive terminals interconnected by a metallization pattern. Especially in very large scale integrated (VLSI) chips, these metal wiring patterns form wiring layers in multiple layers, and each wiring layer is insulated from other conductive layers by an interlayer insulating film and penetrates the interlayer insulating film when it is necessary to electrically connect different wiring layers. Via holes are formed to interconnect each wiring layer.
최근들어 VLSI 칩의 크기가 더욱 작아짐과 동시에 배선층들의 수가 증가함에 따라서 각 배선층중 어느 하나의 요철은 다음 배선층으로 전해지면서 배선층의 표면에는 불규칙한 요철이 생기게된다. 이러한 요철들은 인하여 배선층의 상부로 갈수록 배선층의 균일성을 떨어뜨리게 된다.In recent years, as the size of the VLSI chip becomes smaller and the number of wiring layers increases, irregularities in any one of the wiring layers are transferred to the next wiring layer, resulting in irregular irregularities on the surface of the wiring layer. These unevennesses lower the uniformity of the wiring layer toward the top of the wiring layer.
이와 같은 이유로 심한 요철은 배선층 표면의 평탄화 요구를 발생시켜 고전적으로 배선층 표면을 평탄화 위한 물리적 연마 방법이 연구 개발된 바 있으며, 최근에는 물리적 연마 이외에 화학적 기계적인 연마 방법(Chemical Mechanical Polishing) 방법이 개발되어 사용되고 있다.For this reason, severe unevenness has caused a need for planarization of the wiring layer surface, and the conventional physical polishing method for planarizing the wiring layer surface has been researched and developed. Recently, in addition to physical polishing, a chemical mechanical polishing method has been developed. It is used.
종래 화학적 기계적 연마방법은 알루미나(Alumina), 실리카(Silica), 순수, 수산화칼륨 또는 수산화나트륨으로 조성된 pH 조절액 등을 혼합하여 제조한 슬러리(slurry)라 불리우는 연마제를 웨이퍼 표면에 적용함으로써 슬러리에 포함된 화학 물질을 통해 웨이퍼의 표면은 화학적으로 반응됨과 동시에 연삭 입자가 웨이퍼의 표면을 기계적으로 폴리싱한 후, 웨이퍼 표면에 묻어 있는 슬러리를 세정하기까지의 과정을 포함한다.Conventional chemical mechanical polishing methods are applied to a slurry surface by applying an abrasive called slurry, which is prepared by mixing alumina, silica, pure water, a pH adjusting liquid composed of potassium hydroxide or sodium hydroxide, and the like. Through the chemicals involved, the surface of the wafer is chemically reacted, and the grinding particles mechanically polish the surface of the wafer and then clean the slurry on the surface of the wafer.
이와 같은 화학적 기계적 연마방법을 구현하기 위한 종래 화학적 기계적 연마장치는 연마 패드, 연마 패드의 상면에서 웨이퍼를 흡착하고 있는 웨이퍼 척, 웨이퍼 또는 연마 패드가 소정 속도로 회전되는 상태에서 연마 패드에 앞서 설명한 슬러리를 공급하는 슬러리 공급부, 화학적 기계적 연마가 종료된 웨이퍼가 웨이퍼 척에 의하여 임시적으로 로딩되는 웨이퍼 스테이지, 웨이퍼 스테이지에 로딩된 웨이퍼를 로봇 암과 같은 이송장치에 의하여 이송받은 후, 웨이퍼에 묻어 있는 슬러리를 1차적으로 제거하는 슬러리 제거장치, 슬러리 세정장치에서 슬러리가 제거된 후 잔류 슬러리를 세정하는 슬러리 세정장치로 구성된다.Conventional chemical mechanical polishing apparatus for implementing such a chemical mechanical polishing method is a slurry described above in the polishing pad, the wafer chuck adsorbing the wafer on the upper surface of the polishing pad, the wafer or the polishing pad is rotated at a predetermined speed. Slurry supply unit for supplying the wafer, the wafer stage where the chemical mechanical polishing is finished, the wafer stage is temporarily loaded by the wafer chuck, the wafer loaded on the wafer stage is transferred by a transfer device such as a robot arm, the slurry buried in the wafer The slurry removal apparatus which removes a primary, and the slurry washing | cleaning apparatus which wash | cleans a residual slurry after a slurry is removed in a slurry washing | cleaning apparatus.
이때, 웨이퍼 척에는 웨이퍼를 흡착할 수 있도록 복수개의 동심원상에 원형 배열된 진공홀이 형성되고, 진공홀은 배관에 의하여 진공압 발생부와 연통되어 진공압 발생부에서 발생된 진공압에 의하여 진공홀 내부가 진공이 됨으로써 웨이퍼는 웨이퍼 척에 견고하게 흡착된다.At this time, the wafer chuck is formed with a vacuum hole arranged in a circular shape on a plurality of concentric circles so as to suck the wafer, the vacuum hole is in communication with the vacuum pressure generating portion by the pipe, the vacuum by the vacuum pressure generated in the vacuum pressure generating portion The vacuum inside the hole makes the wafer firmly adsorbed to the wafer chuck.
또한, 웨이퍼 척의 진공홀에 연통된 배관의 중간 부분에는 또다른 배관이 연통되고 연통된 배관에는 질소가스 공급부가 연통되는 바, 이처럼 웨이퍼 척에 질소가스 공급부를 형성하여 진공홀로 질소가스를 공급하는 이유는 웨이퍼가 앞서 언급한 웨이퍼 스테이지로 이송된 후 웨이퍼 척으로부터 웨이퍼를 웨이퍼 스테이지에 안착시킬 때 진공압을 해제시켜 웨이퍼 척으로부터 웨이퍼를 분리시키기 위함이다.In addition, another pipe is connected to the intermediate part of the pipe communicating with the vacuum hole of the wafer chuck, and the nitrogen gas supply part is connected to the communicating pipe. Thus, a nitrogen gas supply part is formed in the wafer chuck to supply nitrogen gas to the vacuum hole. This is to release the vacuum pressure to separate the wafer from the wafer chuck when the wafer is placed on the wafer stage from the wafer chuck after the wafer is transferred to the aforementioned wafer stage.
그러나, 종래 화학적 기계적 연마 장치가 웨이퍼의 화학적 기계적 연마, 슬러리 제거, 슬러리 세정의 공정을 진행하는 과정에서 필수적으로 웨이퍼 척이 웨이퍼를 진공 흡착하여야 하고 화학적 기계적으로 연마된 웨이퍼를 웨이퍼 스테이지에 안착시키기 위해서는 웨이퍼 척으로부터 웨이퍼를 분리시켜야만 하지만 웨이퍼척이 웨이퍼를 진공 흡착할 때, 소량의 슬러리가 웨이퍼 척 내부로 유입되고 웨이퍼 척 내부로 유입된 슬러리가 웨이퍼 척 내부에서 굳어져 막히게 됨으로써 주기적으로 화학적 기계적 연마 공정이 중단된 상태에서 클리닝을 수행해야 하는 문제점이 있다.However, during the process of chemical mechanical polishing, slurry removal, and slurry cleaning of the conventional chemical mechanical polishing apparatus, the wafer chuck must be vacuum-adsorbed to the wafer, and the chemical mechanically polished wafer is required to be placed on the wafer stage. The wafer must be separated from the wafer chuck, but when the wafer chuck vacuum absorbs the wafer, a small amount of slurry flows into the wafer chuck and the slurry introduced into the wafer chuck solidifies and clogs inside the wafer chuck, causing periodic chemical mechanical polishing processes. There is a problem that cleaning must be performed in this interrupted state.
따라서, 본 발명은 이와 같은 종래 문제점을 감안한 것으로써, 본 발명의 목적은 웨이퍼 척이 웨이퍼를 웨이퍼 스테이지에 안착시킬 때 질소가스 공급부로부터 질소가스를 진공홀에 공급하여 웨이퍼를 웨이퍼 스테이지에 정확하게 안착시킨 상태에서 진공홀에 순수를 공급하여 진공홀 내부로 유입된 슬러리를 제거함에 있다.Accordingly, the present invention has been made in view of such a conventional problem, and an object of the present invention is to supply nitrogen gas to a vacuum hole from a nitrogen gas supply unit when the wafer chuck seats the wafer on the wafer stage, thereby accurately seating the wafer on the wafer stage. Pure water is supplied to the vacuum hole in the state to remove the slurry introduced into the vacuum hole.
본 발명의 다른 목적은 후술될 본 발명의 상세한 설명에서 보다 명확해질 것이다.Other objects of the present invention will become more apparent from the following detailed description of the invention.
도 1은 본 발명에 의한 화학적 기계적 연마장치의 사시도.1 is a perspective view of a chemical mechanical polishing apparatus according to the present invention.
도 2는 도 1의 A-A 단면도.2 is a sectional view taken along the line A-A in FIG.
이와 같은 본 발명의 목적을 달성하기 위한 본 발명에 의한 화학적 기계적 연마 장치는 슬러리 공급부가 설치된 연마 테이블과, 연마 테이블의 상부에 위치하며 리세스부와 리세스부의 기저면에 진공홀이 형성된 웨이퍼 흡착 패드, 리세스부가 밀봉되도록 웨이퍼 흡착 패드에 결합되며 리세스부의 내부와 연통되도록 관통공이 형성된 덮개 플레이트, 덮개 플레이트와 결합된 웨이퍼 척 로드 및 웨이퍼 척 로드 구동장치를 포함하는 웨이퍼 척과, 덮개 플레이트의 관통공과 결합된 공통 배관의 단부에 연결된 제 1 분기관과 연통되어 가스를 공급하는 가스 공급부와, 공통배관의 단부에 연결된 제 2 분기관과 연통되어 순수를 공급하여 진공홀을 세정하는 순수 공급부와, 공통배관의 단부에 연결된 제 3 분기관과 연통되어 진공홀에 진공압을 발생시키는 진공압 발생부와, 웨이퍼 척에 의하여 연마된 웨이퍼가 임시적으로 이송되는 웨이퍼 스테이지와, 웨이퍼 스테이지의 웨이퍼에 묻은 슬러리를 제거하는 슬러리 제거부와, 슬러리 제거부에서 슬러리가 제거된 웨이퍼를 세정하는 웨이퍼 세정부를 포함한다.The chemical mechanical polishing apparatus according to the present invention for achieving the above object of the present invention is a polishing table provided with a slurry supply unit, and a wafer adsorption pad which is located on the top of the polishing table and the vacuum hole is formed on the bottom surface of the recess and the recess portion. A wafer chuck including a cover plate coupled to the wafer adsorption pad to seal the recess portion and having a through hole formed therein so as to communicate with the inside of the recess portion, a wafer chuck rod and a wafer chuck rod driving device coupled to the cover plate, and a through hole of the cover plate; A gas supply part in communication with the first branch pipe connected to the end of the common pipe to supply gas, and a pure water supply part in communication with the second branch pipe connected to the end of the common pipe to supply pure water, and to clean the vacuum hole; Generating vacuum pressure in the vacuum hole in communication with the third branch pipe connected to the end of the pipe A pneumatic generator, a wafer stage to which the wafer polished by the wafer chuck is temporarily transferred, a slurry removal unit for removing slurry adhered to the wafer of the wafer stage, and a wafer washing unit for cleaning the wafer from which the slurry is removed from the slurry removal unit Include the government.
또한, 본 발명에 의한 화학적 기계적 연마 장치에 의한 웨이퍼의 화학적 기계적 연마 방법은 웨이퍼가 흡착되도록 진공홀이 형성된 웨이퍼 척이 웨이퍼 스테이지에 안착된 웨이퍼를 진공압에 의하여 흡착하는 단계와, 웨이퍼 척에 흡착된 웨이퍼를 화학적 기계적으로 연마하는 단계와, 웨이퍼를 웨이퍼 스테이지에 안착시키기 위하여 진공홀의 진공을 해제하는 단계와, 진공홀 내부에 유입된 슬러리를 제거하기 위하여 진공홀 내부에 순수를 공급하는 단계를 포함한다.In addition, the chemical mechanical polishing method of the wafer by the chemical mechanical polishing apparatus according to the present invention comprises the steps of adsorbing the wafer chuck having a vacuum hole formed so that the wafer is adsorbed by vacuum pressure, the wafer chuck is seated on the wafer stage; Chemically polishing the resulting wafer, releasing the vacuum of the vacuum hole to seat the wafer on the wafer stage, and supplying pure water into the vacuum hole to remove the slurry introduced into the vacuum hole. do.
이하, 본 발명에 의한 화학적 기계적 연마 장치를 첨부된 도 1 또는 도 2를 참조하여 설명하면 다음과 같다.Hereinafter, the chemical mechanical polishing apparatus according to the present invention will be described with reference to FIG. 1 or FIG. 2.
본 발명에 의한 화학적 기계적 연마장치(200)는 전체적으로 보아 슬러리 공급부(105), 연마 척(110), 원판 형상을 갖는 연마 테이블(120), 웨이퍼 스테이지(130), 슬러리 제거장치(140) 및 슬러리 세정장치(150), 턴오버 테이블(160) 및 웨이퍼 카세트(170)를 포함한다.Chemical mechanical polishing apparatus 200 according to the present invention is a slurry supply unit 105, a polishing chuck 110, a polishing table 120 having a disc shape, a wafer stage 130, a slurry removing device 140 and the slurry as a whole The cleaning apparatus 150, the turnover table 160, and the wafer cassette 170 are included.
구체적으로, 연마 테이블(120)에는 연마 패드(125)가 설치되며, 연마 척(110)은 연마 패드(125)의 상면으로부터 소정 간격 이격된 상태로 설치되는 바, 연마 척(110)은 웨이퍼(101)를 흡착 고정한 상태로 후술될 웨이퍼 스테이지(130)로 이동 가능하게 설치된다.Specifically, the polishing table 120 is provided with a polishing pad 125, the polishing chuck 110 is installed in a state spaced apart from the upper surface of the polishing pad 125 by a predetermined distance, the polishing chuck 110 is a wafer ( It is installed so as to be movable to the wafer stage 130 which will be described later in the state in which 101 is fixed.
이와 같은 연마 척(110)을 첨부된 도 2의 단면도를 참조하여 설명하면 다음과 같다.Referring to the cross-sectional view of FIG. 2 attached to the polishing chuck 110 as follows.
연마 척(110)은 원판 형상으로 상면에 원형 홈 형상을 갖는 리세스부(recess part;111b)가 형성된 웨이퍼 흡착 패드(111), 웨이퍼 흡착 패드(111)의 리세스부(111b)에 꼭맞게 삽입되고 리세스부(111b)의 기저면과 소정 간격 이격되는 돌출 길이를 갖는 원통형 돌출부(112a)가 형성된 덮개 플레이트(112), 덮개 플레이트(112)와 웨이퍼 흡착 패드(111)를 나사(117)에 의하여 고정시키는 고정 커버(116), 고정 커버(116)에 설치된 웨이퍼 척 로드(115), 웨이퍼 척 로드(115)를 회전시키는 구동장치(미도시) 및 웨이퍼 흡착 패드(111)의 리세스부(111b)와 덮개 플레이트(112)의 원통형 돌출부(112a)의 사이에 형성된 공간과 연통되도록 덮개 플레이트(112)의 원통형 돌출부(112a)와 연통된 공통 배관(181), 공통 배관(181)에 병렬로 연결된 3 개의 분기관(181a,181b,181c)과 3 개의 분기관(181a,181b,181c)에 각각 연통된 순수 공급부(180), 질소가스 공급부(185), 진공압 발생부(190)로 구성된다.The polishing chuck 110 has a disc shape and fits perfectly to the wafer adsorption pad 111 having a recessed portion 111b having a circular groove shape on the top surface thereof, and the recess 111b of the wafer adsorption pad 111. The cover plate 112, the cover plate 112, and the wafer suction pad 111, which are inserted and have a cylindrical protrusion 112a having a protruding length spaced apart from the base surface of the recess 111b by a predetermined distance, are attached to the screw 117. Fixing cover 116 to be fixed by means, a wafer chuck rod 115 installed on the fixing cover 116, a driving device (not shown) for rotating the wafer chuck rod 115, and a recess portion of the wafer suction pad 111 ( In parallel with the common pipe 181 and the common pipe 181 communicating with the cylindrical protrusion 112a of the cover plate 112 so as to communicate with the space formed between 111b) and the cylindrical protrusion 112a of the cover plate 112. Each of the three branch pipes 181a, 181b, 181c and three branch pipes 181a, 181b, 181c connected to each other. It consists of a pure supply communication unit 180, a nitrogen gas supply 185, the vacuum pressure-generating unit (190).
보다 구체적으로, 웨이퍼 흡착 패드(111)에 형성된 리세스부(111b)의 기저면에는 리세스부(111b)의 기저면을 관통되도록 웨이퍼 흡착 패드측 진공홀(111a)들이 형성되는 바, 웨이퍼 흡착 패드측 진공홀(111a)들은 직경이 점차 증가되는 가상의 동심원들상에 원형 배열되도록 형성된다.More specifically, the wafer adsorption pad side vacuum holes 111a are formed in the base surface of the recess 111b formed in the wafer adsorption pad 111 so as to penetrate the base surface of the recess 111b. The vacuum holes 111a are formed to be circularly arranged on imaginary concentric circles whose diameters are gradually increased.
이와 같이 웨이퍼 흡착 패드측 진공홀(111a)이 형성된 리세스부(111b)와 소정 간격 이격되어 소정 크기의 빈 공간이 형성되도록 하는 덮개 플레이트(112)의 원통형 돌출부(112a)에는 리세스부(111b)와 원통형 돌출부(112a) 사이에 형성된 빈 공간과 연통되도록 관통공(112a)이 형성된다.In this way, the recess 111b is formed in the cylindrical protrusion 112a of the cover plate 112, which is spaced apart from the recess 111b on which the wafer adsorption pad side vacuum hole 111a is formed to form an empty space having a predetermined size. ) And a through hole 112a is formed in communication with the empty space formed between the cylindrical protrusion 112a.
또한, 덮개 플레이트(112)에 고정된 고정 커버(116)중 덮개 플레이트(112)의 관통공(112a)과 대응하는 위치에는 고정 커버측 관통공(116a)이 형성되고, 웨이퍼 척 로드(115)에도 웨이퍼 척 로드측 관통공(115a)이 형성된다.In addition, the fixed cover side through hole 116a is formed at a position corresponding to the through hole 112a of the cover plate 112 among the fixed cover 116 fixed to the cover plate 112, and the wafer chuck rod 115 is formed. The wafer chuck rod side through hole 115a is also formed.
이와 같이 형성된 웨이퍼 척 로드(115)와 고정 커버측 관통공(116a)를 경유하여 배관(113)의 일측 단부가 삽입된 후 배관(113)의 일측 단부는 덮개 플레이트(112)에 밀봉 결합된다.One end of the pipe 113 is inserted through the wafer chuck rod 115 and the fixed cover side through hole 116a formed as described above, and then one end of the pipe 113 is sealed to the cover plate 112.
이와 같이 형성된 배관(113)의 타측 단부에는 공통배관(181)이 연통되고 공통배관(181)에는 3 개의 분기관(181a,181b,181c)이 연통되고 각각의 분기관(181a,181b,181c)에는 질소 공급부(185), 순수 공급부(180) 및 진공압 발생부(190)가 연통되고, 각각의 분기관(181a,181b,181c)에는 솔레노이드 밸브(184,182,186)가 결합된다.The other end of the pipe 113 formed as described above communicates with the common pipe 181, and the common pipe 181 communicates with three branch pipes 181a, 181b, and 181c, and each branch pipe 181a, 181b, and 181c. The nitrogen supply unit 185, the pure water supply unit 180, and the vacuum pressure generator 190 communicate with each other, and the solenoid valves 184, 182, and 186 are coupled to the branch pipes 181a, 181b, and 181c, respectively.
이때, 공통배관(181)에는 웨이퍼 척(110)이 회전하더라도 공통배관(181)이 꼬여 파손되지 않토록 꼬임 방지 수단을 구비하여야 한다.At this time, the common pipe 181 should be provided with a twist prevention means so that the common pipe 181 is not twisted and damaged even if the wafer chuck 110 is rotated.
한편, 이와 같이 구성된 연마 척(110)과 인접한 곳에는 첨부된 도 2에 도시된 바와 같이 웨이퍼(101)가 안착되는 단턱(미도시)이 형성된 웨이퍼 스테이지(130)가 설치된다.Meanwhile, a wafer stage 130 having a stepped portion (not shown) on which the wafer 101 is seated is installed, as shown in FIG. 2, adjacent to the polishing chuck 110 configured as described above.
웨이퍼 스테이지(130)에 안착된 웨이퍼(101)는 다시 로봇 암(미도시)과 같은 웨이퍼 이송장치에 의하여 슬러리 제거장치(140)로 이송되는데, 슬러리 제거장치(140)는 두 개의 슬러리 제거 롤러(142,144)가 맞닿아 회전하여 웨이퍼(101)에 묻어 있는 슬러리를 1차적으로 제거하는 역할을 한다.The wafer 101 seated on the wafer stage 130 is transferred to the slurry removal device 140 by a wafer transfer device such as a robot arm (not shown), and the slurry removal device 140 includes two slurry removal rollers ( 142 and 144 abut and rotate to primarily remove the slurry on the wafer 101.
이 슬러리 제거장치(140)에서 슬러리가 제거된 웨이퍼(101)는 슬러리 세정장치(150)로 이송되어 세정된 후 스핀 드라이 공정을 거치게 된다.The wafer 101 from which the slurry is removed from the slurry removal device 140 is transferred to the slurry cleaning device 150 and cleaned, and then subjected to a spin dry process.
슬러리 세정장치(140)는 웨이퍼(101)를 고속으로 회전시키는 웨이퍼 회전 테이블(152), 웨이퍼 회전 테이블(152)에 안착된 웨이퍼(101)에 순수를 공급하는 순수 공급노즐(155)로 구성된다.The slurry cleaning device 140 includes a wafer turn table 152 for rotating the wafer 101 at high speed, and a pure water supply nozzle 155 for supplying pure water to the wafer 101 seated on the wafer turn table 152. .
슬러리 세정장치(140)에 근접한 곳에는 웨이퍼(101)의 앞, 뒤를 바꾸어주는 턴 오버 테이블(160)이 설치되어 턴 오버 테이블(160)에 의하여 웨이퍼(101)의 전면이 위로 향한 상태에서 웨이퍼(101)는 웨이퍼 카세트(170)에 로딩된다.The turn-over table 160 for changing the front and the back of the wafer 101 is installed near the slurry cleaner 140 so that the front surface of the wafer 101 is turned upward by the turn-over table 160. 101 is loaded into wafer cassette 170.
이와 같이 형성된 화학적 기계적 연마 장치에 의한 웨이퍼의 화학적 기계적 연마 방법을 첨부된 도면을 참조하여 설명하면 다음과 같다.The chemical mechanical polishing method of the wafer by the chemical mechanical polishing apparatus thus formed will be described with reference to the accompanying drawings.
먼저, 도시되지 않은 웨이퍼 카세트로부터 웨이퍼(101)가 웨이퍼 스테이지(130)로 로딩되면 웨이퍼 척(110)에 연결된 진공압 발생부(190)가 작동됨과 동시에 솔레노이드 밸브(186)가 오픈되면서 웨이퍼 흡착 패드(111)의 리세스부(111b)와 덮개 플레이트(112)의 원통형 돌출부(112a)의 사이에 형성된 공간에 진공압이 걸리면서 웨이퍼 흡착 패드측 진공홀(111a) 내부도 진공압이 형성되고 이와 같은 상태에서 웨이퍼 스테이지(130)에 로딩된 웨이퍼(101)에 웨이퍼 척(110)이 접근됨으로써 웨이퍼(101)는 웨이퍼 흡착 패드측 진공홀(111a)의 진공압에 의하여 웨이퍼 흡착 패드(111)에 흡착 고정된다.First, when the wafer 101 is loaded into the wafer stage 130 from a wafer cassette (not shown), the vacuum pressure generating unit 190 connected to the wafer chuck 110 is operated and the solenoid valve 186 is opened to open the wafer suction pad. While the vacuum pressure is applied to the space formed between the recess 111b of the 111 and the cylindrical protrusion 112a of the cover plate 112, the vacuum pressure is also generated inside the vacuum suction pad side 111a of the wafer adsorption pad. As the wafer chuck 110 approaches the wafer 101 loaded on the wafer stage 130 in the state, the wafer 101 is adsorbed to the wafer adsorption pad 111 by the vacuum pressure of the wafer suction pad side vacuum hole 111a. It is fixed.
이후, 웨이퍼 척(110)은 연마 테이블(120)의 연마 패드(125) 상면으로 이송되어 소정 회전수로 회전됨과 동시에 슬러리 공급부(105)로부터 슬러리가 공급되면서 웨이퍼(101)의 화학적 기계적 연마가 수행된다.Thereafter, the wafer chuck 110 is transferred to the upper surface of the polishing pad 125 of the polishing table 120, rotated at a predetermined rotational speed, and the slurry is supplied from the slurry supply unit 105, thereby performing chemical mechanical polishing of the wafer 101. do.
계속하여 웨이퍼(101)의 화학적 기계적 연마가 수행된 후 웨이퍼(101)의 화학적 기계적 연마가 종료되면 웨이퍼 척(110)은 회전을 멈춘 상태에서 다시 웨이퍼 스테이지(130)로 이송된 후, 웨이퍼(101)를 웨이퍼 스테이지(130)에 언로딩하게 되는데, 이를 위하여 진공압 발생부(190)가 작동을 멈춤과 동시에 솔레노이드 밸브(186)가 폐쇄되고, 질소가스 공급부(185)와 연통된 분기관(181b)에 형성된 솔레노이드 밸브(184)가 오픈되면서 웨이퍼 흡착 패드측 진공홀(111a)에 진공압이 해제되면서 웨이퍼(101)는 안전하게 웨이퍼 스테이지(130)에 안착된다.After the chemical mechanical polishing of the wafer 101 is completed, when the chemical mechanical polishing of the wafer 101 is completed, the wafer chuck 110 is transferred to the wafer stage 130 again while the rotation is stopped, and then the wafer 101 is removed. ) Is unloaded onto the wafer stage 130. To this end, the solenoid valve 186 is closed and the branch pipe 181b communicating with the nitrogen gas supply unit 185 at the same time the vacuum pressure generator 190 stops operating. As the solenoid valve 184 formed in FIG. 1) is opened, the vacuum pressure is released to the wafer suction pad side vacuum hole 111 a and the wafer 101 is safely seated on the wafer stage 130.
이후, 질소가스 공급부(185)와 연통된 분기관(181a)에 설치된 솔레노이드 밸브(184)가 폐쇄되면서 순수 공급부(180)와 연통된 솔레노이드 밸브(181b)가 개방되면서 순수는 분기관(181b)-공통배관(181)-배관(113)-리세스부(111b) 및 원통형 돌출부(112a)의 사이에 형성된 빈공간-웨이퍼 흡착 패드(111)의 웨이퍼 흡착 패드측 진공홀(111a)을 차례대로 세정하면서 웨이퍼 흡착 패드측 진공홀(111a) 외부로 배출된다.Thereafter, the solenoid valve 184 installed in the branch pipe 181a in communication with the nitrogen gas supply unit 185 is closed, and the solenoid valve 181b in communication with the pure water supply unit 180 is opened, and the pure water is in the branch pipe 181b. Cleaning the wafer suction pad side vacuum hole 111a of the empty space-wafer suction pad 111 formed between the common pipe 181, the pipe 113, the recess 111b and the cylindrical protrusion 112a in sequence. While being discharged to the outside of the wafer suction pad side vacuum hole 111a.
이때, 웨이퍼 흡착 패드측 진공홀(111a)에 빨려 올라와 있던 슬러리는 순수에 의하여 완전히 세정되어 슬러리에 의하여 웨이퍼 흡착 패드측 진공홀(111a)의 막힘이 방지된다.At this time, the slurry sucked up into the wafer adsorption pad side vacuum hole 111a is completely cleaned by pure water, and the slurry of the wafer adsorption pad side vacuum hole 111a is prevented by the slurry.
이상에서 상세하게 설명한 바와 같이, 웨이퍼 척이 웨이퍼를 흡착 고정할 때 진공홀로 빨려 올라간 슬러리를 웨이퍼가 웨이퍼 스테이지에 안착된 후 순수에 의하여 세정함으로써 슬러리가 진공홀 내부에서 굳어 진공홀을 막히지 않게 하여 화학적 기계적 연마 장치의 클리닝 주기를 연장시키는 효과가 있다.As described in detail above, the slurry sucked up into the vacuum hole when the wafer chuck adsorbs and fixes the wafer is cleaned by pure water after the wafer is seated on the wafer stage, so that the slurry hardens inside the vacuum hole and does not block the vacuum hole. There is an effect of extending the cleaning period of the mechanical polishing apparatus.
Claims (4)
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| KR10-1999-0000824A KR100526920B1 (en) | 1999-01-14 | 1999-01-14 | Apparaus and method for chemically and mechanically polishing wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100835513B1 (en) * | 2003-10-15 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Chemical mechanical polishing apparatus and method for driving thereof |
| KR100910509B1 (en) * | 2007-12-18 | 2009-07-31 | 주식회사 동부하이텍 | Chemical-mechanical polishing apparatus for manufacturing semiconductor devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100538540B1 (en) * | 1997-04-08 | 2006-06-16 | 가부시키가이샤 에바라 세이사꾸쇼 | Polishing device |
| JP2000135670A (en) * | 1998-10-30 | 2000-05-16 | Okamoto Machine Tool Works Ltd | Chemo-mechanical polishing method of wafer |
| KR200182720Y1 (en) * | 1999-12-31 | 2000-05-15 | 아남반도체주식회사 | Device for cleaning wafer carrier of chemical mechanical polishing system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100835513B1 (en) * | 2003-10-15 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Chemical mechanical polishing apparatus and method for driving thereof |
| KR100910509B1 (en) * | 2007-12-18 | 2009-07-31 | 주식회사 동부하이텍 | Chemical-mechanical polishing apparatus for manufacturing semiconductor devices |
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