KR20000046945A - Method for monitoring contamination amount of wafer - Google Patents

Method for monitoring contamination amount of wafer Download PDF

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Publication number
KR20000046945A
KR20000046945A KR1019980063676A KR19980063676A KR20000046945A KR 20000046945 A KR20000046945 A KR 20000046945A KR 1019980063676 A KR1019980063676 A KR 1019980063676A KR 19980063676 A KR19980063676 A KR 19980063676A KR 20000046945 A KR20000046945 A KR 20000046945A
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South Korea
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wafer
cleaning
pure water
equipment
solution
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KR1019980063676A
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Korean (ko)
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이종수
김학묵
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김영환
현대전자산업 주식회사
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Priority to KR1019980063676A priority Critical patent/KR20000046945A/en
Publication of KR20000046945A publication Critical patent/KR20000046945A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: A method for monitoring contamination amount of a wafer is provided to detect the contamination of the wafer using an AFM(atomic force microscopy) equipment. CONSTITUTION: A method for monitoring contamination amount of a wafer according to the present invention includes following steps. At the first step, an oxide layer(20) is deposited on a wafer(10). At the second step, the wafer is left on a line stocker so as for a contaminant(30) to be adhered to the wafer surface. At the third step, the chemicals on the wafer surface is rinsed by way of pure water. At the forth step, the wafer is deposited in light HF solution. At the fifth step, the wafer is rinsed for the second time using the pure water. At the sixth step, the wafer is dried and the surface is analyzed using the atomic force microscopy equipment. The oxide layer is deposited over than a thickness of 100 angstrom.

Description

웨이퍼의 오염세정도 모니터링방법Wafer contamination level monitoring method

본 발명은 웨이퍼에 함유된 이물질을 측정하는 방법에 관한 것으로서, 특히, 웨이퍼에 흡착된 이물질의 제거 상태를 측정하기 위하여 샘플로 채택된 웨이퍼상에 산화막을 증착하고 소정시간 웨이퍼를 라인에 놓아두어 인위적으로 이물질을 흡착시킨 후에 여러 가지의 세정공정을 거쳐서 웨이퍼 흡착된 이물질을 제거한 후 AFM(Atomic Force Microscopy)장비를 사용하여 웨이퍼의 오염도를 측정하도록 하는 웨이퍼의 오염세정도 모니터링방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring foreign matter contained in a wafer. In particular, in order to measure the removal state of foreign matter adsorbed on a wafer, an oxide film is deposited on a wafer adopted as a sample and the wafer is placed in a line for a predetermined time. The present invention relates to a method for monitoring the contamination of a wafer to remove the foreign matter adsorbed on the wafer through various cleaning processes and then to measure the contamination of the wafer using AFM (Atomic Force Microscopy) equipment.

일반적으로, 웨이퍼의 표면에 대한 오염을 분석하는 방법중에 특히, 유기층(Organic Layer)에 대한 분석은 "XPS"방법(X-Ray Photoelectron Spectroscopy)을 이용하고, 비유기성 오염물질인 메탈릭 임퓨리티(Metallic Impurity)계열 분석은 "TXRF(Total Reflection X-Ray Fluorence)장비를 이용하고, 입자 결함은 레이저 스캐터링(Laser Scattering)방식을 이용하고 있다.In general, the method of analyzing the contamination on the surface of the wafer, in particular, the analysis of the organic layer using the "XPS" method (X-Ray Photoelectron Spectroscopy), the metallic organic impurities (organic contaminants) Impurity series analysis uses "Total Reflection X-Ray Fluorence" (TXRF) and laser scattering (Laser Scattering).

이때, 유기성 오염물질의 경우에는 반도체 제조 라인 내의 공기중에 많은 종류의 Air Molecular Contaminant(AMC : 이하 이물질이라 칭함)가 존재하고 있으며, 공기중에 노출된 웨이퍼 표면에 쉽게 흡착된다. 이 웨이퍼 표면에 흡착된 이물질들은 웨이퍼 표면특성을 친수성으로 전환시켜서 습윤(Wettability)특성을 저하시키게 된다.At this time, in the case of organic contaminants, many kinds of Air Molecular Contaminants (AMC: hereinafter referred to as foreign substances) exist in the air in the semiconductor manufacturing line, and are easily adsorbed on the wafer surface exposed to the air. The foreign matter adsorbed on the wafer surface converts the wafer surface property into hydrophilicity and degrades the wettability property.

이러한 특성에 의하여 미세 콘택홀내부를 세정함에 있어서, 세정용액의 콘택홀내부로의 흐름을 억제하여 세정에 어려움을 주고 있다. 종래에는 웨이퍼 표면의 탄소(Carbon)의 함유량을 측정하여서 웨이퍼의 오염정도를 측정하게 되는 것으로서, 종래의 XPS장비등은 파괴검사(Destructive Test Method)를 사용하므로 웨이퍼의 소모량이 많을 뿐만아니라 유기오염물질에 대한 연구에서는 낮은 레벨의 오염정도를 측정하므로 정량분석신뢰도가 저하되는 문제점을 지니고 있었다.Due to these characteristics, in cleaning the fine contact hole, the flow of the cleaning solution into the contact hole is suppressed, thereby making it difficult to clean. Conventionally, the degree of contamination of the wafer is measured by measuring the carbon content of the wafer surface. The conventional XPS equipment uses a destructive test method, which not only consumes a lot of wafers but also contaminates organic pollutants. In the study on low level of contamination, the reliability of quantitative analysis was deteriorated.

또한, 시료제작과정에서 시간지연이 발생하고 2차 AMC오염으로 인한 로우 레벨(Low Level)의 분석에는 적합하지 않은 단점을 지니고 있었다.In addition, there was a time delay during the sample preparation process and it was not suitable for low level analysis due to secondary AMC contamination.

본 발명은 이러한 점을 감안하여 안출한 것으로서, 웨이퍼에 흡착된 이물질의 제거 상태를 측정하기 위하여 샘플로 채택된 웨이퍼상에 산화막을 증착하고 소정시간 웨이퍼를 라인에 놓아두어 인위적으로 이물질을 흡착시킨 후에 여러 가지의 세정공정을 거쳐서 웨이퍼 흡착된 이물질을 제거한 후 AFM(Atomic Force Microscopy)장비를 사용하여 웨이퍼의 오염도를 측정하도록 하는 것이 목적이다.The present invention has been made in view of this point, and in order to measure the removal state of foreign matter adsorbed on the wafer, an oxide film is deposited on a wafer adopted as a sample, and the wafer is placed on a line for a predetermined time to artificially adsorb foreign matter. After removing various foreign substances adsorbed on the wafer through various cleaning processes, the purpose is to measure the contamination of the wafer using AFM (Atomic Force Microscopy) equipment.

도 1 내지 도 4는 본 발명에 따른 각각 다른 세정물질로 웨이퍼를 세정한 상태를 AFM장비로 관찰한 상태를 보인 도면.1 to 4 is a view showing a state observed by cleaning the wafer with a different cleaning material according to the present invention with AFM equipment.

-도면의 주요부분에 대한 부호의 설명-Explanation of symbols on the main parts of the drawing

10 : 웨이퍼 20 : 산화막10 wafer 20 oxide film

30 : 이물질30: foreign matter

이러한 목적은 웨이퍼 상에 레이저 장비를 사용하여 마킹을 한 후 산화막을 적층하는 단계와; 상기 단계 후 AFM장비로 웨이퍼의 표면 조직을 분석한 후 웨이퍼에 인위적으로 오염물질이 흡착되도록 하기 위하여 웨이퍼를 라인 스토커에 방치하도록 하는 단계와; 상기 단계 후 유기세정용제에 웨이퍼를 담근 후 순수를 이용하여 웨이퍼 표면에 흡착된 화학물질을 세정하도록 하는 제1세정단계와; 상기 단계 후 웨이퍼를 묽은 불산 용액에 담그는 단계와; 상기 단계 후 웨이퍼를 순수를 이용하여 세정하도록 하는 제2세정단계와; 상기 단계 후 웨이퍼를 건조시킨 후에 AFM장비를 사용하여 표면의 조직을 분석하도록 하는 단계를 포함한 웨이퍼의 오염세정도 모니터링방법을 제공함으로써 달성된다.This object comprises the steps of laminating an oxide film after marking using a laser equipment on the wafer; Analyzing the surface structure of the wafer with the AFM equipment after the step, and leaving the wafer in a line stocker to artificially adsorb contaminants on the wafer; A first cleaning step of immersing the wafer in the organic cleaning solvent after the step and cleaning the adsorbed chemicals on the wafer surface using pure water; Immersing the wafer in dilute hydrofluoric acid solution after the step; A second cleaning step of cleaning the wafer with pure water after the step; After this step is achieved by providing a method for monitoring the contamination level of the wafer, including the step of drying the wafer and then analyzing the surface texture using AFM equipment.

그리고, 상기 산화막은 100Å이상의 두께로 적층하도록 하고, 상기 웨이퍼를 라인스토커에 30일 ∼ 50일정도 방치시키도록 한다.The oxide film is laminated to a thickness of 100 GPa or more, and the wafer is left to the line stocker for 30 to 50 days.

또한, 상기 제1세정단계에서 웨이퍼를 담글 때 유기세정용제는 SPM용액 혹은 APM용액으로 담그도록 한다.In addition, when the wafer is immersed in the first cleaning step, the organic cleaning solvent is to be immersed in SPM solution or APM solution.

그리고, 상기 제1세정단계에서 유기세정용제에 담그는 대신에 순수와 오존의 혼합용액에 담글 수도 있다.And, instead of immersing in the organic cleaning solvent in the first cleaning step may be immersed in a mixed solution of pure water and ozone.

그리고, 상기 제1세정단계는 순수를 10 ∼ 20분 동안 퀵 덤프 린스(Quick Dump Rinse) 혹은 오버 플로우(Over Flow) 세정을 진행하도록 한다.In addition, the first washing step is to perform a quick dump rinse or overflow cleaning of pure water for 10 to 20 minutes.

상기 웨이퍼를 건조시킬 때, 이소프로필 드라이어(IPA Dryer) 혹은 스핀 드라이어(Spin Dryer)를 사용하도록 한다.When drying the wafer, an isopropyl dryer (IPA Dryer) or spin dryer (Spin Dryer) is used.

이하, 첨부한 도면에 의거하여 본 발명의 바람직한 일실시예에 대하여 상세히 살펴보도록 한다.Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 1 내지 도 4는 본 발명에 따른 각각 다른 세정물질로 웨이퍼를 세정한 후 상태를 AFM장비로 관찰한 상태를 보인 도면이다.1 to 4 are views showing the state observed with the AFM equipment after cleaning the wafer with different cleaning materials according to the present invention.

우선, 본 발명을 이용하여 샘플로 채택된 웨이퍼를 사용하여 이물질을 흡착 시킨 후에 세정공정을 진행하고, 이물질의 특성을 측정하도록 하는 상태를 순차적으로 살펴 보도록 한다.First, using a wafer adopted as a sample using the present invention, after adsorbing foreign matters, the cleaning process is performed and the state of measuring the properties of the foreign matters is sequentially examined.

먼저, 웨이퍼(10) 상에 레이저 장비를 사용하여 마킹을 한 후 산화막(20)을 100Å이상의 두께로 특히, 1000Å정도의 두께로 적층하도록 하는 것으로서, 도 1은 웨이퍼(10)에 산화막(20)을 적층한 상태를 AFM장비로 영상화한 것을 보이고 있다.First, the marking is performed on the wafer 10 by using laser equipment, and then the oxide film 20 is laminated to a thickness of about 100 GPa or more, particularly about 1000 GPa. FIG. 1 shows the oxide film 20 on the wafer 10. It is shown that the stacked state of the film was imaged by AFM equipment.

그리고, 상기 단계 후 AFM장비로 웨이퍼의 표면 조직(Surface Morphology)을 분석한 후 웨이퍼에 인위적으로 오염물질이 흡착되도록 하기 위하여 웨이퍼를 라인 스토커(Line Stocker)에 30일 ∼ 50일정도 방치하도록 한다.Then, after analyzing the surface morphology (Surface Morphology) of the wafer with the AFM equipment after the step to leave the wafer in a line stocker (Line Stocker) for 30 to 50 days in order to artificially adsorb the contaminants on the wafer.

그러므로, 웨이퍼를 제조하는 공정에서와 같이 공기중에 함유된 이물질이 웨이퍼의 표면에 흡착되어지게 된다.Therefore, foreign matter contained in the air is adsorbed on the surface of the wafer as in the process of manufacturing the wafer.

그리고, 상기 단계 후 유기세정용제, 특히, SPM용액 혹은 APM용액에 웨이퍼를 담근 후 순수를 이용하여 웨이퍼 표면에 흡착된 화학물질을 세정하도록 한다.Subsequently, after the step, the wafer is immersed in an organic cleaning solvent, in particular, an SPM solution or an APM solution, and then cleaned of chemicals adsorbed on the wafer surface using pure water.

이때, 상기 웨이퍼를 유기세정용제에 담그는 대신에 순수와 오존의 혼합용액에 담그도록 할수 있다.In this case, the wafer may be immersed in a mixed solution of pure water and ozone instead of immersing the wafer in an organic cleaning solvent.

한편, 도 2는 오존/순수를 이용하여 웨이퍼를 세정하였을 때 이미지 영상이고, 도 3은 SPM세정 후의 이미지 영상이며, 도 4는 APM세정 후의 이미지 영상을 보인 도면으로서, SPM세정 후에 가장 효과적으로 웨이퍼(10)에 형성된 이물질을 제거할 수 있음을 보이고 있다.FIG. 2 is an image image when the wafer is cleaned using ozone / pure water, FIG. 3 is an image image after SPM cleaning, and FIG. 4 is an image image after APM cleaning. It is shown that foreign matter formed in 10) can be removed.

그리고, 계속하여 웨이퍼를 순수로 세정한 후 웨이퍼를 묽은 불산 용액에 10 ∼ 60 초 정도 담그도록 한다.Subsequently, the wafer is washed with pure water, and the wafer is immersed in dilute hydrofluoric acid solution for about 10 to 60 seconds.

그리고, 상기 단계 후 웨이퍼를 순수를 이용하여 세정하도록 하는 제2세정단계를 진행하도록 한다.After the step, the second cleaning step of cleaning the wafer with pure water is performed.

이때, 제2세정단계는 순수를 10 ∼ 20분 동안 Quick Dump Rinse 혹은 Over Flow세정으로 진행하도록 한다.At this time, the second washing step is to proceed to the Quick Dump Rinse or Over Flow cleaning of pure water for 10 to 20 minutes.

그리고, 상기 제2세정단계 후 웨이퍼를 건조시킨 도록 하고, AFM장비를 사용하여 표면의 조직을 분석하도록 하여 웨이퍼의 오염도를 측정하도록 한다.Then, the wafer is dried after the second cleaning step, and the surface texture is analyzed using an AFM device to measure the contamination of the wafer.

상기 웨이퍼를 건조시킬 때, 이소프로필 드라이어 혹은 스핀 드라이어를 사용하여 건조시키도록 한다.When the wafer is dried, it is dried using an isopropyl dryer or spin dryer.

따라서, 상기한 바와 같이 본 발명에 따른 웨이퍼의 오염세정도 모니터링방법을 이용하게 되면, 웨이퍼에 흡착된 이물질의 제거 상태를 측정하기 위하여 샘플로 채택된 웨이퍼상에 산화막을 증착하고 소정시간 웨이퍼를 라인에 놓아두어 인위적으로 이물질을 흡착시킨 후 여러 가지의 세정공정을 거쳐서 웨이퍼 흡착된 이물질을 제거한 후 AFM(Atomic Force Microscopy)장비를 사용하여 웨이퍼의 오염도를 측정하므로 웨이퍼를 파괴하는 파괴검사 방식이 아닌 비파괴검사 방식으로 웨이퍼의 오염도를 측정하므로 시간과 비용을 저감할 수 있을 뿐만아니라 낮은 레벨의 오염여부에 대하여서도 물리적인 분석이 가능하도록 하는 매우 유용하고 효과적인 발명이다.Therefore, when using the method for monitoring the contamination pollution of the wafer according to the present invention as described above, in order to measure the removal state of foreign matter adsorbed on the wafer, an oxide film is deposited on the wafer adopted as a sample and the wafer is lined for a predetermined time. It is not non-destructive method that destroys wafers by artificially adsorbing foreign matters and then removing the foreign substances adsorbed on the wafer through various cleaning processes and then measuring the contamination of the wafers using AFM (Atomic Force Microscopy) equipment. By measuring the contamination level of the wafer by inspection method, it is a very useful and effective invention that not only saves time and cost, but also enables physical analysis even at low levels of contamination.

Claims (6)

웨이퍼 상에 레이저 장비를 사용하여 마킹한 후 산화막을 적층하는 단계와;Stacking an oxide film after marking using laser equipment on the wafer; 상기 단계 후 AFM장비로 웨이퍼의 표면 조직을 분석한 후 웨이퍼에 인위적으로 오염물질이 흡착되도록 하기 위하여 웨이퍼를 라인 스토커에 방치하도록 하는 단계와;Analyzing the surface structure of the wafer with the AFM equipment after the step, and leaving the wafer in a line stocker to artificially adsorb contaminants on the wafer; 상기 단계 후 유기세정용제에 웨이퍼를 담근 후 순수를 이용하여 웨이퍼 표면에 흡착된 화학물질을 세정하도록 하는 제1세정단계와;A first cleaning step of immersing the wafer in the organic cleaning solvent after the step and cleaning the adsorbed chemicals on the wafer surface using pure water; 상기 단계 후 웨이퍼를 묽은 불산 용액에 담그는 단계와;Immersing the wafer in dilute hydrofluoric acid solution after the step; 상기 단계 후 웨이퍼를 순수를 이용하여 세정하도록 하는 제2세정단계와;A second cleaning step of cleaning the wafer with pure water after the step; 상기 단계 후 웨이퍼를 건조시킨 후에 AFM장비를 사용하여 표면의 조직을 분석하도록 하는 단계를 포함한 것을 특징으로 하는 웨이퍼의 오염세정도 모니터링방법.After the step of drying the wafer after the step of using the AFM equipment comprising the step of analyzing the surface texture of the wafer. 제 1 항에 있어서, 상기 산화막은 100Å이상의 두께로 적층하는 것을 특징으로 하는 웨이퍼의 오염세정도 모니터링방법.The method of claim 1, wherein the oxide film is laminated to a thickness of 100 GPa or more. 제 1 항에 있어서, 상기 제1세정단계에서 사용하는 유기세정용제는 SPM용액 혹은 APM용액인 것을 특징으로 하는 웨이퍼의 오염세정도 모니터링방법.The method of claim 1, wherein the organic cleaning solvent used in the first cleaning step is an SPM solution or an APM solution. 제 1 항에 있어서, 상기 제1세정단계에서 유기세정용제에 담그는 대신에 순수와 오존의 혼합용액에 담그는 것을 특징으로 하는 웨이퍼의 오염세정도 모니터링방법.The method of claim 1, wherein in the first cleaning step, instead of dipping in an organic cleaning solvent, dipping in a mixed solution of pure water and ozone. 제 1 항에 있어서, 상기 제2세정단계는 순수를 10 ∼ 20분 동안 퀵 덤프 린스 혹은 오버 플로우세정으로 진행하는 것을 특징으로 하는 웨이퍼의 오염세정도 모니터링방법.The method of claim 1, wherein the second cleaning step comprises purifying pure water for 10 to 20 minutes using a quick dump rinse or an overflow cleaning. 제 1 항에 있어서, 상기 웨이퍼를 건조시킬 때, 이소프로필 드라이어 혹은 스핀 드라이어를 사용하는 것을 특징으로 하는 웨이퍼의 오염세정도 모니터링방법.The method of claim 1, wherein an isopropyl dryer or spin dryer is used to dry the wafer.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549263B1 (en) * 2003-12-10 2006-02-03 동부아남반도체 주식회사 Bath Cleaning Wafer and Wafer Pollution Level Measurement Method
KR100835419B1 (en) * 2007-04-09 2008-06-04 동부일렉트로닉스 주식회사 Method for manufacturing particle wafer to measure cleaning effect

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549263B1 (en) * 2003-12-10 2006-02-03 동부아남반도체 주식회사 Bath Cleaning Wafer and Wafer Pollution Level Measurement Method
KR100835419B1 (en) * 2007-04-09 2008-06-04 동부일렉트로닉스 주식회사 Method for manufacturing particle wafer to measure cleaning effect

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