KR20000039736A - Ion implanter for semiconductor manufacture - Google Patents

Abstract

PURPOSE: An ion implanter used for a manufacture of a semiconductor device is provided to prevent undesirable phenomena such as charging or channeling on wafer surfaces. CONSTITUTION: An ion implanter includes a reaction chamber(101) connected with an extraction power supply(109). The extraction power supply(109) is also connected with an extraction electrode(110). The ion implanter further includes a gas tank(102) containing reacting gas such as Ar, Xe, or Cs. The gas tank(102) is connected with the reaction chamber(101) to supply the reacting gas into the chamber(101). A shield plate(103) wound with RF coils(108) is disposed inside the chamber(101) to ionize the reacting gas, and a target(104) connected with a DC power supply(106) is also disposed inside the chamber(101) oppositely to the shield plate(103). In addition, an RF power supply(106) is connected with the RF coils(108) via an RF matching box(107). When the reacting gas is supplied into the chamber(101), the RF-powered shield plate(103) ionizes the reacting gas. Next, the ionized gas collides with the DC-powered target(104), and thereby negative ions are generated from the target(104). The negative ions are then implanted into a wafer.

Description

Ion implanter in semiconductor manufacturing process

The present invention relates to a semiconductor manufacturing process, and more particularly to an ion implantation apparatus of a semiconductor manufacturing process.

As shown in FIG. 1, the ion implantation apparatus of the conventional semiconductor manufacturing process is installed to be connected to the arc chamber 1 and the arc chamber 1 outside of the arc chamber 1 so that the reaction gases Ar, Xe, A reaction gas cylinder 2 containing Cs), a filament 3 that is heated by a current provided in the arc chamber 1 to emit hot electrons, and is installed outside the arc chamber 1 to react ARC power connected to the magnet 4 to increase the probability of collision between gas and hot electrons, a reflector 5 installed in the arc chamber 1, and an arc chamber 1 to supply an ARC voltage. It consists of a supply 6.

In the ion implantation apparatus of the semiconductor manufacturing process having such a structure, the reaction gas contained in the reaction gas cylinder 2 installed outside the arc chamber 1 flows into the arc chamber 1 and the filament installed in the arc chamber 1. (3) emits hot electrons while being heated by the supplied power supply (voltage 5V current 200A).

At this time, the hot electrons emitted from the filament (3) is moved to the inner surface of the arc chamber (1) by the ARC voltage generated in the ARC power supply (6) connected to the arc chamber (1), the arc chamber Positive ions are generated as the hot electrons moved to the inner surface side of (1) collide with the reaction gas flowing into the arc chamber 1.

The positive ions generated as described above are released to the outside of the arc chamber 1 by extraction energy and are injected into the wafer.

Here, since the magnet 4 is installed outside the arc chamber 1, the hot electrons and the reaction gas collide with each other so that the distance from which the hot electrons reach the inner surface side of the arc chamber 1 is increased by the magnet 4. The probability of ionization of the reaction gas is improved because the probability of the reaction gas increases.

However, in the ion implantation apparatus of the conventional semiconductor manufacturing process, positive ions are generated as the reaction gas introduced from the reaction gas cylinder 2 and the hot electrons emitted from the filament 3 collide into the arc chamber 1. The positive ions are implanted into the wafer, and since the charge and channeling phenomena are generated on the surface of the wafer by the positive ions injected into the wafer, there is a problem in that the defect of the wafer is generated.

The present invention has been made to solve the above problems, the method of implanting ions into the wafer in the semiconductor manufacturing process by changing the negative ion (negative ion) method to the negative ion generated by the negative ion method to the wafer The injection is prevented from charging (charge) and channeling (channeling) on the surface of the wafer is to prevent the defect of the wafer.

In order to achieve the above object, the present invention is the reaction chamber is supplied with the extraction power, the reaction gas passage is installed outside the reaction chamber containing the reaction gas, the RF coil is installed in the reaction chamber flows RF power An ion implantation apparatus of a semiconductor manufacturing process is provided comprising a shield plate wound up and a target supplied with a dish (DC) power to generate negative ions while colliding with an ionized reaction gas in the reaction chamber.

1 is a structural diagram showing a structure of an ion implanter in a conventional semiconductor manufacturing process.

Figure 2 is a structural diagram showing the structure of the ion implanter in the semiconductor manufacturing process of the present invention.

Explanation of symbols for main parts of the drawings

101: reaction chamber 102: reaction gas cylinder

103: shield plate 104: target

105: DC power supply 106: RF power supply

107: RF matching box 108: RF coil

109: extraction power supply 110: extraction electrode

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Since the semiconductor manufacturing process has been mentioned in the conventional configuration, overlapping portions are omitted, and only the same structure is assigned the same reference numeral.

2 is a structural diagram showing the structure of an ion implanter in the semiconductor manufacturing process of the present invention, the present invention is connected to the reaction chamber 101 is supplied with the extraction power, the reaction chamber 101 outside the reaction chamber 101 The reaction gas container 102 containing the reaction gas is installed so that the reaction gas (Ar, Xe, Cs) flows into the reaction chamber 101, and inside the reaction chamber 101 to ionize the reaction gas. A shield plate 103 on which a radio frequency (RF) coil 108 is provided is wound, and a DC power source is installed in the reaction chamber 101. As the supplied and ionized reaction gas collides, a target 104 is provided to supply a DC power to generate negative ions.

A DC power supply 105 for supplying DC power to the target 104 is installed outside the reaction chamber 101.

An RF power supply 106 for generating RF power is installed outside the reaction chamber 101, and an RF power supply is provided between the RF power supply 106 and the RF coil 108. An RF matching box 107 is provided for sending RF power from the fryer 106 to the RF coil 108.

The RF power supply 106, the RF matching box 107, and the RF coil 108 are connected in series.

An extraction power supply 109 is connected and installed in the reaction chamber 101, and an extraction electrode 110 is provided in the extraction power supply 109. .

The operation of the present invention configured as described above is as follows.

First, the reaction gas contained in the reaction gas cylinder 102 installed outside the reaction chamber 101 flows into the reaction chamber 101, and the reaction gas introduced into the reaction chamber 101 flows into the reaction chamber 101. Ionized in.

That is, a shield plate 103 in which the RF coil 108 is wound is installed in the reaction chamber 101, and the RF coil 108 is RF matched with the RF power supply 106 that supplies RF power. Since the boxes 107 are connected in series, RF power is supplied from the RF power supply 106 to the RF matching box 107, and the RF power is supplied from the RF matching box 107 to the RF coil 108. RF power is applied to the shield plate 103 as it is transmitted to.

Therefore, the reaction gas introduced into the reaction chamber 101 is ionized by the RF power applied to the shield plate 103, and the ionized reaction gas collides with the target 104 installed in the reaction chamber 101. .

Since the DC power supply 105 is connected to the target 104, an ionized reaction impinging on the target 104 as the DC power generated from the DC power supply 105 is supplied to the target 104. Gas generates negative ions at the target 104.

As described above, the generated negative ions are released to the outside of the reaction chamber 101 as extraction energy and injected into the wafer.

As described above, the present invention forms the negative ions in the reaction chamber by the ion implanter of the semiconductor manufacturing process, so that the negative ions are discharged to the outside of the reaction chamber and injected into the wafer to charge on the surface of the wafer ) Phenomenon and channeling phenomenon are prevented, so that defects of the wafer can be prevented.

Claims (1)

A reaction chamber supplied with extraction power, A reaction gas passage installed outside the reaction chamber and containing a reaction gas, A shield plate installed in the reaction chamber and wound with an RF coil through which RF power flows; The ion implantation apparatus of the semiconductor manufacturing process, characterized in that the target chamber is provided in the reaction chamber is supplied with a DC power supply to generate negative ions while colliding with the ionized reaction gas.