KR20000039308A - Exposure apparatus for manufacturing semiconductor device - Google Patents

Exposure apparatus for manufacturing semiconductor device Download PDF

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Publication number
KR20000039308A
KR20000039308A KR1019980054616A KR19980054616A KR20000039308A KR 20000039308 A KR20000039308 A KR 20000039308A KR 1019980054616 A KR1019980054616 A KR 1019980054616A KR 19980054616 A KR19980054616 A KR 19980054616A KR 20000039308 A KR20000039308 A KR 20000039308A
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South Korea
Prior art keywords
reticle
projection lens
alignment
pattern
alignment pattern
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KR1019980054616A
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Korean (ko)
Inventor
김수현
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김영환
현대반도체 주식회사
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Priority to KR1019980054616A priority Critical patent/KR20000039308A/en
Publication of KR20000039308A publication Critical patent/KR20000039308A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: An exposure apparatus for fabricating a semiconductor device is provided to reduce the exposure error of the semiconductor device by detecting the error of a transmitting lens before the exposure process is carried out. CONSTITUTION: An exposure apparatus has a light source(101). A reticle(102) is provided to form a reticle align pattern(103b) and a transmitting lens align pattern(103a). A transmitting lens(107) reduces the transmitting lens align pattern(103a). A wafer is aligned on a wafer stage(105). A reticle alignment scope(109b) is provided to detect the reticle align pattern(103b). A first CCD camera(110) is connected to the reticle alignment scope(109b). A transmitting lens alignment scope(109a) is installed on the wafer stage(105). A second CCD camera(110) is connected to the transmitting lens alignment scope(109a).

Description

반도체 제조용 노광장치Exposure Equipment for Semiconductor Manufacturing

본 발명은 반도체 제조용 노광장치에 관한 것으로써, 특히, 최초의 노광공정 이전에 투영렌즈의 배율 이상을 검출하여 반도체 소자의 노광 불량을 감소시키는 반도체 제조용 노광장치이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for semiconductor manufacturing, and more particularly, to an exposure apparatus for semiconductor manufacturing that detects abnormal magnification of a projection lens before the first exposure process to reduce exposure defect of a semiconductor element.

일반적으로 포토레지스트가 도포된 웨이퍼상에 패턴을 형성하기 위해서는 일정한 패턴이 형성된 레티클(reticle)에 빛을 선택적으로 투과시키되, 일정한 배율로 패턴을 웨이퍼상에 축소투영시켜 패턴을 형성하여 웰(well)또는 로코스(locos)등을 형성하는 노광공정을 반복적으로 진행시킨다.Generally, in order to form a pattern on a photoresist-coated wafer, light is selectively transmitted through a reticle on which a predetermined pattern is formed, and the pattern is formed by shrinking and projecting the pattern on the wafer at a constant magnification to form a well. Alternatively, the exposure step of forming locos or the like is repeatedly performed.

이러한 포토공정에서 패턴을 일정한 배율로 축소시키는 투영렌즈의 초점이 맞지않게 되거나, 투영렌즈가 팽창되면 레티클에 형성된 패턴이 웨이퍼 상의 포토레지스트에 그대로 축소투영되지 않아 패턴의 숏트 또는 단락이 발생되거나, 홀 형성시 홀의 형태가 찌그러지는 등의 문제가 발생된다.In this photo process, the projection lens that reduces the pattern at a constant magnification becomes out of focus, or when the projection lens is inflated, the pattern formed on the reticle is not reduced and projected onto the photoresist on the wafer, resulting in a short or short circuit of the pattern. Problems such as distortion of the shape of the hole when forming.

또한, 레티클 또는 웨이퍼의 틸트(tilt)가 맞지않게 되면 광원이 웨이퍼 상에 제대로 전사되지 않아 노광공정의 불량을 발생시키게 된다.In addition, when the tilt of the reticle or the wafer is not matched, the light source is not properly transferred onto the wafer, thereby causing a defect in the exposure process.

따라서, 노광공정이 진행된 후, 다음 노광공정을 진행시키기 전에 투영렌즈의 초점정렬뿐만 아니라, 웨이퍼 및 레티클의 정렬을 진행시킨다.Therefore, after the exposure process is performed, not only the focus alignment of the projection lens but also the alignment of the wafer and the reticle are performed before the next exposure process is performed.

이와같은 투영렌즈의 초점정렬과 웨이퍼 및 레티클의 정렬이 진행되는 종래의 반도체 제조용 노광장치를 제 1 도를 참조하여 설명하면 다음과 같다.Referring to FIG. 1, a conventional exposure apparatus for manufacturing a semiconductor, in which the focal alignment of the projection lens and the alignment of the wafer and the reticle are performed will be described below.

종래의 노광장치는 제 1 광원부(1a)의 하단으로 레티클 스테이지(5)에 레티클(2)이 형성되어 있다.In the conventional exposure apparatus, the reticle 2 is formed on the reticle stage 5 at the lower end of the first light source unit 1a.

상기 레티클(2)은 웨이퍼(미도시)상에 전사시키고자 하는 패턴이 형성된 패턴(4)과 투영렌즈(7)의 정렬에 사용되는 투영렌즈 정렬패턴(3a) 및 레티클(2)정렬에 사용되는 레티클 정렬패턴(3b)으로 이루어진다.The reticle 2 is used to align the projection lens alignment pattern 3a and the reticle 2 used to align the pattern 4 and the projection lens 7 on which a pattern to be transferred onto a wafer (not shown) is formed. Consisting of a reticle alignment pattern 3b.

상기 레티클 정렬패턴(3b)상단으로는 CCD카메라(10)에 연결된 레티클 정렬용 스코프(9)가 위치되고, 상기 레티클 정렬패턴(3b)하단으로 레티클 스테이지(2)에 기준 정렬패턴(6)이, 기준정렬 패턴(6)의 하단으로 광을 발생시키는 제 2 광원부(1b)가 위치된다.The reticle alignment scope 9 connected to the CCD camera 10 is positioned above the reticle alignment pattern 3b, and the reference alignment pattern 6 is disposed on the reticle stage 2 below the reticle alignment pattern 3b. The second light source 1b for generating light to the lower end of the reference alignment pattern 6 is positioned.

레티클 스테이지(5)의 하단으로는 일정한 배율로 축소가 가능한 다수개의 투영렌즈(7)가 위치된다.At the bottom of the reticle stage 5, a plurality of projection lenses 7 which can be reduced at a constant magnification are positioned.

그리고, 투영렌즈(7)의 하단으로는 노광하고자 하는 웨이퍼(미도시)가 장착되는 웨이퍼 스테이지(8)가 위치된다.At the lower end of the projection lens 7, a wafer stage 8 on which a wafer (not shown) to be exposed is mounted is located.

이와같은 종래의 노광장치에서 레티클(2)의 정렬은 제 2 광원부(1b)에서 광을 레티클 스테이지의 기준 정렬패턴(6)으로 입사시켜 레티클의 정렬패턴(3b)과의 중첩여부를 레티클 정렬용 스코프(9)와 CCD카메라(10)를 통해 기준정렬패턴(6)과 정렬패턴(3b)에서 형성된 각각의 정렬패턴을 중첩시켜 중첩도에 따라 정렬장치(미도시)에 의해 레티클(2)의 정렬이 진행된다.In the conventional exposure apparatus, the alignment of the reticle 2 is performed by injecting light from the second light source unit 1b into the reference alignment pattern 6 of the reticle stage so that the reticle is aligned with the alignment pattern 3b of the reticle. Each of the alignment patterns formed in the reference alignment pattern 6 and the alignment pattern 3b through the scope 9 and the CCD camera 10 is superimposed so that the reticle 2 can be moved by an alignment device (not shown) according to the degree of overlap. Alignment is in progress.

그리고, 투영렌즈(7)의 정렬은 제 1 광원부(1a)에서 광이 입사되어 레티클 정렬용 패턴(3a)을 통과하여 형성된 정렬 패턴과 이전 노광공정에 의해 미리 형성되어진 정렬패턴을 중첩시켜 두 개의 정렬패턴이 서로 중첩되는 정도를 측정하여 정렬장치(미도시)에 투영렌즈(7)의 정렬이 진행된다.Then, the alignment of the projection lens 7 overlaps the alignment pattern formed by the light source incident on the first light source 1a and passed through the reticle alignment pattern 3a and the alignment pattern previously formed by the previous exposure process. The alignment of the projection lens 7 to the alignment device (not shown) is measured by measuring the degree to which the alignment patterns overlap each other.

그러나, 종래의 반도체 제조용 노광장치에서 웨이퍼상에 가장 처음 실시하는 노광공정은 사전에 이루어진 노광공정이 없어 처음 노광시 투영렌즈의 렌즈 배율 오차가 발생되더라도 이를 감지할 수 없게된다.However, the first exposure process performed on the wafer in the conventional exposure apparatus for semiconductor manufacturing does not have a pre-exposure exposure process, so that even if a lens magnification error of the projection lens occurs during the first exposure, it cannot be detected.

따라서, 투영렌즈의 배율오차는 처음 노광공정을 진행시켜 하나의 투영렌즈 정렬용 패턴을 형성시킨후, 다음 노광공정에서 또다른 투영렌즈 정렬용 패턴을 형성시켜 이 두 개의 투영렌즈 정렬용 패턴을 중첩시켜 확인할 수 밖에 없게된다.Therefore, the magnification error of the projection lens is first subjected to the exposure process to form one projection lens alignment pattern, and then another projection lens alignment pattern is formed in the next exposure process to overlap the two projection lens alignment patterns. I have no choice but to confirm.

그러므로, 처음 노광공정에서 렌즈배율의 오차에 의해 패턴의 이상이 계속적으로 유발되어 노광공정의 노광불량을 지속적으로 발생시키는 요인으로 작용하게 된다.Therefore, an abnormality in the pattern is continuously caused by an error in the lens magnification in the first exposure process, thereby acting as a factor that continuously generates exposure defects in the exposure process.

따라서, 본 발명은 처음 노광공정이 진행되기 전에 투영렌즈의 렌즈 배율 이상유무를 측정할수 있는 반도체 제조용 노광장치를 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide an exposure apparatus for manufacturing a semiconductor which can measure the presence or absence of lens magnification abnormality of the projection lens before the first exposure process is performed.

따라서, 본 발명은 상기 목적을 달성하고자, 광원부과, 상기 광원부에서 광이 입사되면 레티클 정렬패턴 및 투영렌즈 정렬패턴을 형성시키는 레티클과, 상기 레티클에서 형성된 투영렌즈 정렬패턴을 일정한 배율로 축소시키는 투영렌즈와, 상기 투영렌즈에서 축소된 투영렌즈 정렬패턴이 형성되는 웨이퍼가 위치되는 웨이퍼 스테이지를 포함하고, 상기 레티클의 레티클 정렬패턴을 감지하기 위한 레티클 정렬용 스코프와, 상기 레티클 정렬용 스코프에 연결된 CCD카메라를 구비한 반도체 제조용 노광장치에 있어서, 상기 웨이퍼 스테이지에 투영렌즈 정렬용 스코프를 추가로 구비하고, 상기 투영렌즈 정렬용 스코프를 상기 CCD카메라에 연결시켜 상기 투영렌즈 정렬용 스코프에서 검출된 투영렌즈 정렬패턴과 상기 레티클 정렬용 스코프에서 검출된 레티클 정렬패턴이 서로 비교되도록 한다.Therefore, in order to achieve the above object, the present invention provides a light source unit, a reticle for forming a reticle alignment pattern and a projection lens alignment pattern when light is incident from the light source unit, and a projection for reducing the projection lens alignment pattern formed from the reticle at a constant magnification. A wafer stage including a lens, a wafer on which a projection lens alignment pattern reduced in the projection lens is formed, a reticle alignment scope for detecting a reticle alignment pattern of the reticle, and a CCD connected to the reticle alignment scope An exposure apparatus for manufacturing a semiconductor having a camera, comprising: a projection lens alignment scope on the wafer stage, and a projection lens alignment scope detected by the projection lens alignment scope by connecting the projection lens alignment scope to the CCD camera. Reticle detected by alignment pattern and scope for reticle alignment Allow the alignment alignment patterns to be compared with each other.

상기 투영렌즈 정렬용 스코프는 검출된 투영렌즈 정렬패턴을 확대가능하게 일정한 확대배율을 갖도록 하되, 확대배율은 상기 투영렌즈의 축소배율을 상쇄시킬 정도로 하면 된다.The projection lens alignment scope may have a constant magnification so as to magnify the detected projection lens alignment pattern, but the magnification may be such that the reduction magnification of the projection lens is offset.

제 1 도는 종래의 반도체 제조용 노광장치에 대한 개략도이고,1 is a schematic diagram of a conventional exposure apparatus for manufacturing a semiconductor,

제 2 도는 본 발명인 반도체 제조용 노광장치에 대한 개략도이고,2 is a schematic view of an exposure apparatus for manufacturing a semiconductor according to the present invention,

제 3 도는 본 발명인 반도체 제조용 노광장치의 CCD카메라에 나타나는 정렬패턴의 중첩을 보인 도면이다.3 is a diagram showing the superposition of alignment patterns appearing on the CCD camera of the exposure apparatus for semiconductor manufacturing according to the present invention.

* 도면의 주요부분에 대한 간략한 부호설명 ** Brief description of the main parts of the drawings *

1,101 : 광원부 2,102 : 레티클1,101: light source 2,102: reticle

3,103 : 정렬패턴 영역 4,104 : 패턴영역3,103: alignment pattern area 4,104: pattern area

5,105 : 레티클스테이지 6,106 : 기준 정렬패턴 영역5,105: Reticle Stage 6,106: Reference alignment pattern area

7,107 : 투영렌즈 8,108 : 웨이퍼 스테이지7,107: projection lens 8,108: wafer stage

9,109 : 스코프 10,110 : CCD카메라9,109: Scope 10,110: CCD Camera

이하, 첨부된 도면을 참조하여 본 발명인 반도체 제조용 노광장치를 설명하면 다음과 같다.Hereinafter, an exposure apparatus for manufacturing a semiconductor of the present invention will be described with reference to the accompanying drawings.

제 2 도는 본 발명인 노광장치에 대한 개략도로써, 본 발명인 노광장치는 제 1 광원부(101a)의 하단으로 레티클 스테이지(105)에 레티클(102)이 형성되어 있다.2 is a schematic view of the exposure apparatus of the present invention, in which the reticle 102 is formed in the reticle stage 105 at the lower end of the first light source unit 101a.

레티클(102)은 웨이퍼(미도시)상에 전사시키고자 하는 패턴이 형성된 패턴(104)과 투영렌즈(107)의 정렬에 사용되는 투영렌즈 정렬패턴(103a) 및 레티클 정렬에 사용되는 레티클 정렬패턴(103b)으로 이루어진다.The reticle 102 is a pattern 104 on which a pattern to be transferred onto a wafer (not shown) and a projection lens alignment pattern 103a used to align the projection lens 107 and a reticle alignment pattern used to align the reticle 103b.

그리고, 레티클의 레티클 정렬패턴(103b)하단으로 레티클 스테이지(105)에 기준 정렬패턴(106)이 형성되고, 레티클 정렬패턴(103b)의 상단으로 CCD카메라(110)와 연결된 레티클 정렬용 스코프(109b)가 위치된다.A reference alignment pattern 106 is formed on the reticle stage 105 under the reticle alignment pattern 103b of the reticle, and the reticle alignment scope 109b connected to the CCD camera 110 at the top of the reticle alignment pattern 103b. ) Is located.

레티클 스테이지(105)의 하단으로 일정한 비율로 축소투영이 가능하도록 다수개의 투영렌즈(107)가 위치되고, 투영렌즈(107)의 하단으로는 노광하고자 하는 웨이퍼(미도시)가 장착되는 웨이퍼 스테이지(108)가 위치된다.A plurality of projection lenses 107 are positioned at the lower end of the reticle stage 105 to enable reduction projection at a constant ratio, and a wafer stage (not shown) on which a wafer (not shown) to be exposed is mounted at the lower end of the projection lens 107 ( 108 is located.

또한, 웨이퍼 스테이지(108)의 일측으로는 CCD카메라(110)와 연결된 투영렌즈 정렬용 스코프(109a)가 위치된다.In addition, one side of the wafer stage 108 is a projection lens alignment scope 109a connected to the CCD camera 110.

이때, 투영렌즈 정렬용 스코프(109a)는 레티클의 투영렌즈 정렬(103a)이 투영렌즈(107)를 거치면서 일정한 배율로 축소되어 웨이퍼 스테이지(108)에 형성되면 이를 검출하게 되고, 검출된 투영렌즈 정렬패턴(103a)를 CCD카메라(110)로 보낼때 투영렌즈(107)를 거치기 전의 원래 크기로 확대시킬수 있는 확대배율을 갖도록 한다.At this time, the projection lens alignment scope 109a detects when the projection lens alignment 103a of the reticle is reduced to a constant magnification while being formed on the wafer stage 108 while passing through the projection lens 107, and the detected projection lens is detected. When the alignment pattern 103a is sent to the CCD camera 110, the magnification can be enlarged to the original size before passing through the projection lens 107.

즉, 투영렌즈 정렬패턴(103a)이 투영렌즈(107)를 거치면서 1/5 배율로 축소되어 투영렌즈 정렬용 스코프(109a)에 검출되면, 이를 다시 5 배율로 확대시켜 CCD카메라(110)로 보내게 되는 것이다.That is, when the projection lens alignment pattern 103a is reduced to 1/5 magnification while passing through the projection lens 107 and detected by the projection lens alignment scope 109a, the projection lens alignment pattern 103a is magnified again to 5 magnifications to the CCD camera 110. Will be sent.

이러한 본 발명인 반도체 제조용 노광장치는 처음 노광공정이 진행되기 전에 투영렌즈(107)정렬을 시킬수 있는데, 먼저, 레티클 스테이지(102)의 기준 정렬패턴(106)으로 제 2 광원부(101b)에서 광을 입사시켜 레티클 정렬용 스코프(109b)와 CCD카메라(110)를 통해 레티클 정렬패턴(103b)과 기준 정렬패턴(106)을 중첩시켜 이를 토대로 정렬장치(미도시)에 의해 미리 레티클(102)의 정렬을 진행시킨다.The exposure apparatus for semiconductor manufacturing according to the present invention may align the projection lens 107 before the first exposure process proceeds. First, light is incident on the second light source unit 101b through the reference alignment pattern 106 of the reticle stage 102. By superimposing the reticle alignment pattern 103b and the reference alignment pattern 106 through the reticle alignment scope 109b and the CCD camera 110, the alignment of the reticle 102 is pre-arranged by an alignment device (not shown). Proceed.

레티클(102)의 정렬이 완료되면 제 1 광원부(101a)에서 광을 레티클(102)로 입사시키고, 레티클의 투영렌즈 정렬패턴(103a)을 통과한 광은 투영렌즈(107)를 거쳐 웨이퍼 스테이지(108)상에 축소투영된 투영렌즈 정렬패턴을 형성하게 된다.When the alignment of the reticle 102 is completed, light is incident on the reticle 102 by the first light source 101a, and the light passing through the projection lens alignment pattern 103a of the reticle passes through the projection lens 107 to the wafer stage ( On 108, a projection lens alignment pattern is reduced.

이 투영렌즈 정렬패턴은 투영렌즈 정렬용 스코프(109a)에 의해 그 형태가 검출된다.The shape of the projection lens alignment pattern is detected by the projection lens alignment scope 109a.

이와 동시에 레티클 스테이지(105)의 기준 정렬패턴(106)으로도 제 2 광원부(101b)에서 광이 입사되어 레티클의 레티클 정렬패턴(103b)을 통과하면서 레티클 정렬패턴을 형성시키고, 이 레티클 정렬패턴은 레티클 정렬용 스코프(109b)에 의해 그 형태가 검출된다.At the same time, light is also incident on the reference alignment pattern 106 of the reticle stage 105 to form a reticle alignment pattern while passing through the reticle alignment pattern 103b of the reticle, and the reticle alignment pattern is The shape is detected by the reticle alignment scope 109b.

검출된 레티클 정렬패턴과 투영렌즈 정렬패턴은 CCD카메라(110)에 보내지고, 투영렌즈 정렬용 스코프(109a)에 검출된 투영렌즈 정렬패턴은 투영렌즈(107)에서 축소되기 전의 크기로 확대되어 CCD카메라(110)로 전달된다.The detected reticle alignment pattern and the projection lens alignment pattern are sent to the CCD camera 110, and the projection lens alignment pattern detected by the projection lens alignment scope 109a is enlarged to the size before it is reduced by the projection lens 107 and the CCD. It is transmitted to the camera 110.

CCD카메라(110)로 전달된 각각의 정렬패턴은 CCD카메라(110)에서 서로 중첩되어 나타나게 되는데, 제 3 도는 CCD카메라에서 중첩되는 각각의 정렬패턴을 나타낸 것으로써, 투영렌즈를 통과하지 않는 레티클 정렬패턴(B)과 투영렌즈를 통과한 투영렌즈 정렬패턴(A)이 작은 중첩영역(C)으로 나타날 경우, 이는 투영렌즈(107)의 초점심도가 어긋나 있어 투영렌즈 정렬패턴(A)의 형태가 변형되었다는 것을 뜻한다.Each alignment pattern transmitted to the CCD camera 110 appears to overlap each other in the CCD camera 110. FIG. 3 shows each alignment pattern overlapped by the CCD camera, and reticle alignment does not pass through the projection lens. If the pattern B and the projection lens alignment pattern A passing through the projection lens appear as small overlapping areas C, the depth of focus of the projection lens 107 is shifted, so that the shape of the projection lens alignment pattern A It means that it is modified.

또한, 레티클 정렬패턴(B)과 투영렌즈 정렬패턴(A)의 중첩영역(C)이 완전히 일치하는 경우에는 투영렌즈(107)의 초점심도가 정확하다는 것을 뜻하게 된다.In addition, when the overlap area C of the reticle alignment pattern B and the projection lens alignment pattern A completely coincide, it means that the depth of focus of the projection lens 107 is correct.

따라서, CCD카메라(110)에 나타나는 레티클 정렬패턴(B)과 투영렌즈 정렬패턴(A)의 중첩정도에 따라 투영렌즈(107)의 초점정렬을 실시하면 정확한 투영렌즈(107)의 정렬을 실시할수 있다.Therefore, if the focus alignment of the projection lens 107 is performed according to the overlapping degree of the reticle alignment pattern B and the projection lens alignment pattern A appearing on the CCD camera 110, accurate projection lens 107 can be aligned. have.

이와같은 과정으로 투영렌즈의 정렬을 시키면 처음 이루어지는 노광공정 이전에 투영렌즈(107)의 초점정렬을 진행시킬수 있다.By aligning the projection lens in this manner, the focus alignment of the projection lens 107 can be advanced before the initial exposure process.

상기에서 상술한 바와 같이, 본 발명인 반도체 제조용 노광장치는 처음 노광이 진행되기 이전에 투영렌즈의 초점정렬을 진행시킬수 있게 되어, 처음 노광에서 투영렌즈의 초점심도가 불안정하여 발생되는 반도체 소자의 노광 불량을 방지하고, 노광공정의 안정성을 향상시키는데 그 잇점이 있다.As described above, the exposure apparatus for semiconductor manufacturing according to the present invention can advance the focus alignment of the projection lens before the first exposure proceeds, so that the exposure defect of the semiconductor element generated due to the unstable depth of focus of the projection lens in the first exposure. This is advantageous in preventing and improving the stability of the exposure process.

Claims (2)

광원부과, 상기 광원부에서 광이 입사되면 레티클 정렬패턴 및 투영렌즈 정렬패턴을 형성시키는 레티클과, 상기 레티클에서 형성된 투영렌즈 정렬패턴을 일정한 배율로 축소시키는 투영렌즈와, 상기 투영렌즈에서 축소된 투영렌즈 정렬패턴이 형성되는 웨이퍼가 위치되는 웨이퍼 스테이지가 형성되고, 상기 레티클의 레티클 정렬패턴을 감지하기 위한 레티클 정렬용 스코프와, 상기 레티클 정렬용 스코프에 연결된 CCD카메라를 구비한 반도체 제조용 노광장치에 있어서,A light source unit, a reticle for forming a reticle alignment pattern and a projection lens alignment pattern when light is incident from the light source unit, a projection lens for reducing the projection lens alignment pattern formed at the reticle at a constant magnification, and a projection lens reduced at the projection lens A wafer stage on which a wafer on which an alignment pattern is to be formed is formed is formed, and a reticle alignment scope for detecting a reticle alignment pattern of the reticle, and an exposure apparatus for manufacturing a semiconductor, comprising: a CCD camera connected to the reticle alignment scope; 상기 웨이퍼 스테이지에 투영렌즈 정렬용 스코프를 추가로 구비하고, 상기 투영렌즈 정렬용 스코프를 상기 CCD카메라에 연결시켜 상기 투영렌즈 정렬용 스코프에서 검출된 투영렌즈 정렬패턴과 상기 레티클 정렬용 스코프에서 검출된 레티클 정렬패턴이 서로 중첩 비교되는 것이 특징인 반도체 제조용 노광장치.A projection lens alignment scope is further provided on the wafer stage, and the projection lens alignment scope is connected to the CCD camera to detect the projection lens alignment pattern detected by the projection lens alignment scope and the reticle alignment scope. An exposure apparatus for manufacturing a semiconductor, characterized in that the reticle alignment patterns overlap each other. 청구항 1 에 있어서, 상기 투영렌즈 정렬용 스코프는 검출된 투영렌즈 정렬패턴을 확대시키는 일정한 확대배율을 갖도록 하되, 확대배율은 상기 투영렌즈의 축소배율을 상쇄시킬 정도인 것이 특징인 반도체 제조용 노광장치.The exposure apparatus of claim 1, wherein the projection lens alignment scope has a constant magnification to enlarge the detected projection lens alignment pattern, wherein the magnification is such that the reduction magnification of the projection lens is cancelled.
KR1019980054616A 1998-12-12 1998-12-12 Exposure apparatus for manufacturing semiconductor device KR20000039308A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576830B1 (en) * 2004-10-06 2006-05-10 삼성전자주식회사 Exposure apparatus for manufacturing semiconductor and control method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576830B1 (en) * 2004-10-06 2006-05-10 삼성전자주식회사 Exposure apparatus for manufacturing semiconductor and control method thereof

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