KR20000028119A - Washing liquid for semiconductor fabricating device - Google Patents

Washing liquid for semiconductor fabricating device Download PDF

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Publication number
KR20000028119A
KR20000028119A KR1019980046256A KR19980046256A KR20000028119A KR 20000028119 A KR20000028119 A KR 20000028119A KR 1019980046256 A KR1019980046256 A KR 1019980046256A KR 19980046256 A KR19980046256 A KR 19980046256A KR 20000028119 A KR20000028119 A KR 20000028119A
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South Korea
Prior art keywords
aqueous solution
washing liquid
washing
mixing
cleaning
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KR1019980046256A
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Korean (ko)
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김지형
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윤종용
삼성전자 주식회사
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Priority to KR1019980046256A priority Critical patent/KR20000028119A/en
Publication of KR20000028119A publication Critical patent/KR20000028119A/en

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Abstract

PURPOSE: Washing liquid for a semiconductor fabricating device is provided to prevent the problems of an accident caused in mixing and the inconvenience of mixing each compound in a washing job site by using previously produced washing liquid for only semiconductor fabricating device with a mixture ratio and a constitution of compounds having an excellent washing ability. CONSTITUTION: Washing liquid for a semiconductor fabricating device is made by mixing HNO3, H2O2, and HF. Herein, the HNO3 is in an aqueous solution of 70%, the H2O2 is in the aqueous solution of 99%, and the HF is in the aqueous solution of 45-55%. The HNO3, the H202, and the HF are mixed in the ratio of 3: 4: 1. Moreover, the washing liquid is used for washing a diffusion furnace for performing a diffusion process. Therefore, the washing liquid improves washing ability and work safety by previously mixing various compounds in an optimum ratio.

Description

반도체 제조장비 세정액Semiconductor Manufacturing Equipment Cleaning Solution

본 발명은 반도체 제조장비의 세정작업에 사용되는 세정액에 관한 것으로, 상세하게는 작업 안전성과 세정능력이 개선된 반도체 제조장비의 세정액에 관한 것이다.The present invention relates to a cleaning liquid used for cleaning operations of semiconductor manufacturing equipment, and more particularly, to a cleaning liquid of semiconductor manufacturing equipment with improved working safety and cleaning ability.

일반적으로 반도체 소자의 제조에는 다양한 제조장비가 사용되며, 그 중에서 불순물을 반도체 웨이퍼 표면에 확산시켜 산화막, 절연막 등을 형성시키는 확산공정(Diffusion process) 또는 화학기상증착공정(Chemical vapor deposition process)에서는 확산로(Diffusion furnace)가 주로 사용된다.In general, a variety of manufacturing equipment is used in the manufacture of semiconductor devices, and in the diffusion process or chemical vapor deposition process of diffusing impurities on the surface of the semiconductor wafer to form an oxide film, an insulating film, etc. Diffusion furnaces are mainly used.

이러한 공정에서는 SiH4, SiH2Cl2, HCl, N20, POCl3등과 같은 화학소스(Chemical source)를 가스 상태로 장치 내에 공급하여 웨이퍼 표면상에서 확산을 일으키고, 잔류 가스는 가스 스크러버(Scrubber) 등으로 배출시키게 된다.In this process, chemical sources such as SiH 4 , SiH 2 Cl 2 , HCl, N 2 O, POCl 3, etc. are supplied into the device in a gaseous state to cause diffusion on the wafer surface, and the remaining gas is a gas scrubber. To the back.

도 1에는 상술한 확산로와 가스 스크러버가 도시되어 있다.1 shows the above described diffusion path and gas scrubber.

도 1에 도시된 바와 같이, 확산로는 석영으로 된 내측튜브(11)와 외측튜브(12)를 구비하고 있다. 상기 내측튜브(11)의 내부에는 반도체 웨이퍼가 로딩되어 확산공정이 진행된다. 상기 외측튜브(12)의 외부에는 상기 웨이퍼를 가열하기 위한 히터(13)가 설치되고, 상기 히터(13)의 양단부에는 주로 스테인레스 재질로 된 전방 플랜지(14)와 후방 플랜지(16)가 설치된다. 상기 전방 플랜지(14)에는 상기 웨이퍼를 내측튜브(11) 내부로 출입시키기 위한 전방 도어(15)가 마련되며, 상기 후방 플랜지(16)에는 후방 도어(17)가 설치된다. 상기 전방 플랜지(14)에는 화학소스 가스를 내측튜브(11) 내부로 주입시키기 위한 가스 주입구(18)가 마련되어 있다.As shown in FIG. 1, the diffusion furnace includes an inner tube 11 and an outer tube 12 made of quartz. The semiconductor wafer is loaded inside the inner tube 11 to perform a diffusion process. A heater 13 for heating the wafer is installed outside the outer tube 12, and both ends of the heater 13 are provided with a front flange 14 and a rear flange 16 mainly made of stainless steel. . The front flange 14 is provided with a front door 15 for entering and exiting the wafer into the inner tube 11, and the rear flange 16 is provided with a rear door 17. The front flange 14 is provided with a gas inlet 18 for injecting a chemical source gas into the inner tube 11.

그리고, 상기 내측튜브(11) 내부의 잔류가스를 배출시키기 위한 펌프(30)와 가스 스크러버(40)가 마련되며, 상기 후방 도어(17)와 상기 펌프(30) 사이에는 제1 가스배출관(21)이 연결되어 있고, 상기 펌프(30)와 상기 가스 스크러버(40) 사이에는 제2 가스배출관(31)이 연결되어 있다. 상기 제1 가스배출관(21)의 소정 부위에는 가스의 흐름을 단속하기 위한 메인밸브(22)와 서브밸브(23)가 설치되어 있다.In addition, a pump 30 and a gas scrubber 40 for discharging residual gas inside the inner tube 11 are provided, and a first gas discharge pipe 21 is disposed between the rear door 17 and the pump 30. ) Is connected, and a second gas discharge pipe 31 is connected between the pump 30 and the gas scrubber 40. A predetermined portion of the first gas discharge pipe 21 is provided with a main valve 22 and a sub valve 23 for controlling the flow of gas.

따라서, 상기 가스 주입구(18)를 통해 내측튜브(11) 내부로 주입된 화학소스 가스는 웨이퍼 표면에 확산을 일으키게 되고, 확산을 일으키고 남는 잔류가스는 펌프(30)에 의해 배출된다. 이와 같이 배출된 잔류가스는 가스 스크러버(40)에서 물에 희석되어 다시 외부로 배출된다.Therefore, the chemical source gas injected into the inner tube 11 through the gas inlet 18 causes diffusion on the wafer surface, and the residual gas remaining after the diffusion is discharged by the pump 30. The residual gas discharged in this way is diluted with water in the gas scrubber 40 and discharged again to the outside.

그런데, 이와 같은 확산로에서 사용되고 남은 잔류가스는 배출되는 과정에서 장비의 구성부분, 즉 내측튜브(11)와 외측튜브(12), 플랜지(14, 16), 가스배출관(21, 31) 및 펌프(30) 등의 내부에 부착되어 이상 막질을 형성하거나 부식을 유발시켜 장비의 기능을 저하시키고 수명을 단축시키는 문제점을 발생시킨다. 따라서, 주기적으로 장비를 분해하여 장비 내부에 생성된 이상 막질을 제거하고 부식을 방지하는 세정작업을 행할 필요가 있게 된다.However, the remaining gas used in such a diffusion furnace is a component part of the equipment, that is, the inner tube 11 and the outer tube 12, the flanges 14 and 16, the gas discharge pipes 21 and 31 and the pump during the discharge process. (30) is attached to the inside of the film to form an abnormal film or cause corrosion to reduce the function of the equipment and shorten the life. Therefore, it is necessary to periodically disassemble the equipment to remove the abnormal film generated inside the equipment and perform a cleaning operation to prevent corrosion.

이와 같이 세정작업을 할 때에는 여러 가지 화합물이 혼합된 세정액이 사용되는데, 종래에는 질산(HNO3)과 불화수소(HF)를 함유하는 기존 제품인 제1 혼합물과 제2 혼합물이 주로 사용되었다. 상기 제1 혼합물은 HF 49% 수용액과 질산 70% 수용액과 순수(Deionized water)가 7 : 60 : 33의 중량비로 혼합된 것이고, 상기 제2 혼합물은 HF 49% 수용액과 질산 70% 수용액과 순수가 39 : 14 : 47의 중량비로 혼합된 것이다.In the cleaning operation as described above, a cleaning liquid mixed with various compounds is used. Conventionally, a first mixture and a second mixture, which are existing products containing nitric acid (HNO 3 ) and hydrogen fluoride (HF), are mainly used. The first mixture is a mixture of HF 49% aqueous solution, nitric acid 70% aqueous solution and pure water (Deionized water) in a weight ratio of 7: 60: 33, the second mixture is HF 49% aqueous solution, 70% nitric acid aqueous solution and pure water 39:14:47 by weight.

실제로 현장에서 상기 제1 혼합물과 제2 혼합물을 세정액으로 사용하기 위해서는 그 각각만으로는 세정 능력이 미흡하므로, 제1 혼합물과 제2 혼합물 각각에 다시 HHF를 적당한 비율로 혼합하여 사용하거나, 또는 제1 혼합물과 제2 혼합물 및 HF를 적당한 비율로 혼합하여 사용하게 된다.In fact, in order to use the first mixture and the second mixture as a cleaning liquid in the field, since each of them lacks the cleaning ability, the first mixture and the second mixture are mixed with HHF again in an appropriate ratio, or the first mixture And the second mixture and HF are mixed in an appropriate ratio.

이와 같이 반도체 제조장비 전용의 세정액이 없으므로, 기존 제품인 제1 혼합물과 제2 혼합물에 HF를 적당한 비율로 혼합하여 사용하는데, 최적의 혼합비율이 정해져 있지 않아 사용할 때마다 농도 및 혼합비율에 차이가 발생하게 된다. 따라서, 반도체 제조장비 내부의 이상 막질의 제거가 용이하게 되지 않고, 장비 자체에도 많은 손상을 초래하여 장비의 기능을 저하시키고 수명을 단축시키는 문제점이 있다. 또한, 기존 제품인 제1 혼합물과 제2 혼합물 및 HF를 현장에서 혼합하여 사용하게 되는데, 이와 같은 혼합과정에서 유독한 화합물이 누출되어 안전 사고를 일으키는 경우도 발생한다.As such, since there is no dedicated cleaning solution for semiconductor manufacturing equipment, HF is mixed with the first mixture and the second mixture, which are existing products, in an appropriate ratio. However, since the optimum mixing ratio is not determined, a difference occurs in the concentration and the mixing ratio each time. Done. Therefore, it is not easy to remove the abnormal film inside the semiconductor manufacturing equipment, there is a problem that causes a lot of damage to the equipment itself to reduce the function of the equipment and shorten the life. In addition, the existing mixture of the first mixture, the second mixture, and HF are used in the field, and in such a mixing process, toxic compounds may leak and cause a safety accident.

본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 특히 작업 안전성과 세정능력이 향상된 반도체 제조장비 세정액을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is to provide a cleaning solution for semiconductor manufacturing equipment, particularly improved work safety and cleaning ability.

도 1은 반도체 제조장비 중 확산로를 개략적으로 도시한 도면.1 is a view schematically showing a diffusion path in semiconductor manufacturing equipment.

〈도면의 주요 부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>

11...내측튜브 12...외측튜브11 Inner tube 12 Outer tube

13...히터 14...전방 플랜지13 Heater 14 Front flange

15...전방 도어 16...후방 플랜지15 ... front door 16 ... rear flange

17...후방 도어 18...가스 주입구17.Rear door 18 ... Gas inlet

30...펌프 40...가스 스크러버30 ... pump 40 ... gas scrubber

상기 목적을 달성하기 위하여 본 발명에 따른 반도체 제조장비 세정액은: 반도체 제조장비를 세정하는데 사용되는 것으로, 적어도 질산(HNO3)과 과산화수소(H2O2)와 불화수소(HF)를 혼합하여 된 것을 특징으로 한다.In order to achieve the above object, the semiconductor manufacturing equipment cleaning liquid according to the present invention is used to clean semiconductor manufacturing equipment, and is formed by mixing at least nitric acid (HNO 3 ), hydrogen peroxide (H 2 O 2 ), and hydrogen fluoride (HF). It is characterized by.

여기에서, 상기 질산은 대략 70% 수용액 상태이고 상기 과산화수소는 대략 99% 수용액 상태이며 상기 불화수소는 45 ~ 55% 수용액 상태로서, 실질적으로 3 : 4 : 1의 중량비율로 혼합하여 된 것이 바람직하다.Here, the nitric acid is in a state of approximately 70% aqueous solution, the hydrogen peroxide is in a state of approximately 99% aqueous solution, and the hydrogen fluoride is in a 45-55% aqueous solution state, preferably mixed at a weight ratio of 3: 4: 1.

또한, 상기 세정액은 확산공정을 수행하는 확산로의 세정작업에 사용되는 것이 바람직하다.In addition, the cleaning liquid is preferably used for the cleaning operation of the diffusion furnace to perform the diffusion process.

따라서, 본 발명에 따른 세정액은 여러 가지 화합물이 최적의 비율로 미리 혼합되어 있으므로 작업 안전성이 개선되고, 세정 능력이 향상된다.Therefore, in the cleaning liquid according to the present invention, since various compounds are mixed in advance at an optimum ratio, working safety is improved and cleaning ability is improved.

이하, 본 발명에 따른 반도 체제조장비 세정액의 바람직한 실시예를 상세히 설명한다.Hereinafter, a preferred embodiment of the peninsula structure equipment cleaning liquid according to the present invention will be described in detail.

본 발명에 따른 세정액은 반도체 제조장비, 특히 확산로의 세정작업에 사용된다. 즉, 반도체 제조장비에는 웨이퍼에 산화막 등 박막을 형성시키기 위해 화학소스 가스가 사용되며, 사용되고 남는 잔류가스는 배출되는 과정에서 장비의 구성부분에 부착되어 이상 막질을 형성하거나 부식을 유발시키므로 이를 제거하기 위해 상기 세정액이 사용된다.The cleaning liquid according to the invention is used for cleaning operations of semiconductor manufacturing equipment, in particular diffusion furnaces. In other words, the chemical source gas is used in the semiconductor manufacturing equipment to form a thin film such as an oxide film on the wafer, and the remaining residual gas is attached to the components of the equipment in the process of being discharged, thereby forming an abnormal film or causing corrosion. The cleaning solution is used for this purpose.

본 발명에 따른 세정액은 적어도 질산(HNO3)과 과산화수소(H2O2)와 불화수소(HF)를 혼합하여 제조된다.The cleaning liquid according to the invention is prepared by mixing at least nitric acid (HNO 3 ), hydrogen peroxide (H 2 O 2 ) and hydrogen fluoride (HF).

상기 질산은 부식성을 가지는 강력한 산화제로서, 이상 막질을 제거하는 역할을 하게 된다. 상기 과산화수소의 수용액 즉, 과산화수소수는 주로 방부제, 표백제로 쓰이는 것으로서, 스테인레스 재질로 된 장비의 구성부분을 부식으로부터 방지하는 역할을 한다. 그리고, 상기 불화수소는 수용액 상태에서 부식성의 약산성을 띠게 되며 주로 유리의 식각에 사용되는 것으로서, 석영으로 된 튜브의 표면에 부착된 이상 막질을 제거하는 역할을 하게 된다.The nitric acid is a corrosive strong oxidizing agent, and serves to remove abnormal film. The aqueous solution of hydrogen peroxide, that is, hydrogen peroxide solution is mainly used as a preservative, bleach, serves to prevent the components of the stainless steel equipment from corrosion. In addition, the hydrogen fluoride has a corrosive weak acidity in an aqueous solution, and is mainly used for etching glass, and serves to remove an abnormal film adhered to the surface of a quartz tube.

상기 질산은 대략 70% 수용액 상태이고, 상기 과산화수소는 대략 99% 수용액 상태이며, 상기 불화수소는 45 ~ 55% 수용액 상태로서 혼합된다. 그리고, 그 혼합비율은 실질적으로 3 : 4 : 1의 중량비로 된 것이 바람직하다. 이와 같은 화합물들의 구성과 그 혼합비율은 현장에서 실제 세정작업을 통한 시험 결과 로서 얻어진 것으로서, 우수한 세정 능력을 가진다.The nitric acid is in an approximately 70% aqueous solution state, the hydrogen peroxide is in an approximately 99% aqueous solution state, and the hydrogen fluoride is mixed as a 45-55% aqueous solution state. The mixing ratio is preferably in a weight ratio of 3: 4: 1. The composition of these compounds and their mixing ratio are obtained as a result of the actual cleaning operation in the field, and have excellent cleaning ability.

따라서, 상술한 바와 같이 우수한 세정 능력을 가지는 화합물들의 구성과 그 혼합비율로 미리 반도체 제조장비 전용 세정액을 제조하여 사용함으로써, 세정 작업시에 현장에서 각 화합물을 혼합하여야 하는 불폄한 점과 그 혼합 과정에서 발생될 수 있는 안전 사고의 위험성을 해소할 수 있게 된다. 또한, 혼합비율이 적절하지 않음으로 인한 장비 자체의 손상도 방지할 수 있게 된다.Therefore, as described above, by preparing and using a cleaning liquid for semiconductor manufacturing equipment in advance in the composition and mixing ratio of the compounds having excellent cleaning ability, the disadvantages of mixing each compound in the field during the cleaning operation and its mixing process The risk of a safety accident that can occur in the In addition, it is possible to prevent damage to the equipment itself due to the inappropriate mixing ratio.

이상에서 설명한 바와 같이, 본 발명에 따른 반도체 제조장비 세정액은 질산(HNO3)과 과산화수소(H2O2)와 불화수소(HF)가 미리 적정한 비율로 혼합되어 있으므로 세정 작업시 작업 안전성이 개선되고, 우수한 세정 능력을 갖는 화합물들의 구성과 그 혼합비율을 가지므로 장비의 손상을 최소화하고 이상 막질을 효과적으로 제거할 수 있게 된다.As described above, in the semiconductor manufacturing equipment cleaning solution according to the present invention, since nitric acid (HNO 3 ), hydrogen peroxide (H 2 O 2 ), and hydrogen fluoride (HF) are mixed in an appropriate ratio in advance, the work safety during the cleaning operation is improved. As a result, the composition and the mixing ratio of the compounds having excellent cleaning ability can minimize the damage of the equipment and effectively remove the abnormal film quality.

Claims (3)

반도체 제조장비를 세정하는데 사용되는 것으로, 적어도 질산(HNO3)과 과산화수소(H2O2)와 불화수소(HF)를 혼합하여 된 것을 특징으로 하는 반도체 제조장비 세정액.A semiconductor cleaning equipment cleaning liquid used for cleaning semiconductor manufacturing equipment, wherein at least nitric acid (HNO 3 ), hydrogen peroxide (H 2 O 2 ), and hydrogen fluoride (HF) are mixed. 제 1항에 있어서,The method of claim 1, 상기 질산은 대략 70% 수용액 상태이고 상기 과산화수소는 대략 99% 수용액 상태이며 상기 불화수소는 45 ~ 55% 수용액 상태로서, 실질적으로 3 : 4 : 1의 중량비율로 혼합하여 된 것을 특징으로 하는 반도체 제조장비 세정액.The nitric acid is in a state of approximately 70% aqueous solution, the hydrogen peroxide is in a state of approximately 99% aqueous solution, and the hydrogen fluoride is in a 45-55% aqueous state, and is a semiconductor manufacturing equipment, characterized in that it is substantially mixed in a weight ratio of 3: 4: 1. Cleaning liquid. 제 1항에 있어서,The method of claim 1, 상기 반도체 제조장비는 확산공정을 수행하는 확산로인 것을 특징으로 하는 반도체 제조장비 세정액.The semiconductor manufacturing equipment cleaning liquid, characterized in that the diffusion furnace for performing a diffusion process.
KR1019980046256A 1998-10-30 1998-10-30 Washing liquid for semiconductor fabricating device KR20000028119A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052909A2 (en) * 2009-10-29 2011-05-05 동우 화인켐 주식회사 Etchant composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052909A2 (en) * 2009-10-29 2011-05-05 동우 화인켐 주식회사 Etchant composition
WO2011052909A3 (en) * 2009-10-29 2011-09-01 동우 화인켐 주식회사 Etchant composition

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