KR20000025182A - Method for manufacturing tantal capacitor - Google Patents
Method for manufacturing tantal capacitor Download PDFInfo
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- KR20000025182A KR20000025182A KR1019980042157A KR19980042157A KR20000025182A KR 20000025182 A KR20000025182 A KR 20000025182A KR 1019980042157 A KR1019980042157 A KR 1019980042157A KR 19980042157 A KR19980042157 A KR 19980042157A KR 20000025182 A KR20000025182 A KR 20000025182A
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- South Korea
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- tantalum
- polypyrrole
- layer
- oxide film
- solution
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title abstract description 5
- 239000003990 capacitor Substances 0.000 title description 29
- 238000004519 manufacturing process Methods 0.000 title description 9
- 229920000128 polypyrrole Polymers 0.000 claims abstract description 72
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 70
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 238000005470 impregnation Methods 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 230000008595 infiltration Effects 0.000 abstract 2
- 238000001764 infiltration Methods 0.000 abstract 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 description 25
- 239000000243 solution Substances 0.000 description 20
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/032—Inorganic semiconducting electrolytes, e.g. MnO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
본 발명은 탄탈 캐패시터(Tantal Capacitor)에 관한 것으로, 보다 상세하게는 탄탈 캐패시터의 전해질로 사용되는 폴리피롤을 탄탈소자의 유전체 산화막에 코팅시키는 탄탈 캐패시터의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to tantalum capacitors, and more particularly, to a method of manufacturing tantalum capacitors in which polypyrrole used as an electrolyte for tantalum capacitors is coated on a dielectric oxide film of a tantalum element.
일반적으로 탄탈 캐패시터는 반도체작용을 하는 탄탈금속(Ta)의 산화피막을 캐패시터의 유전체(Ta2O5)로 이용한 캐패시터이다. 상기 탄탈 캐패시터는 양극산화에 의하여 탄탈산화물(Ta2O5)을 유전체로 하고 있다. 탄탈의 박과 소결체를 전극으로 양극산화에 의하여 탄탈금속면에 형성된 산화피막은 화성전압 1V당 10 ∼ 16Å으로 형성된 얇은 피막으로서 피막의 두께는 화성전압의 상승에 비례하여 증가하며, 캐패시터의 정전용량과는 반비례 관계를 이루고 있다. 또한, 화성전압은 탄탈전해 캐패시터의 종류에 따라 다르지만 탄탈고체 캐패시터에서는 정격전압의 3 ∼ 4배, 탄탈박형 캐패시터에서는 1.3 ∼ 1.4배를 기준으로 하고 있고, 유전체인 탄탈산화피막의 유전율= 23으로 유전율이 7에 해당하는 알루미늄산화피막에 비해 약 3배에 해당한다.In general, a tantalum capacitor is a capacitor using an oxide film of tantalum metal (Ta), which acts as a semiconductor, as a dielectric (Ta 2 O 5 ) of a capacitor. The tantalum capacitor uses tantalum oxide (Ta 2 O 5 ) as a dielectric material by anodization. The oxide film formed on the tantalum metal surface by anodizing the foil and sintered body of tantalum as an electrode is a thin film formed at 10 ~ 16Å per 1V of the conversion voltage, and the thickness of the coating increases in proportion to the increase in the voltage of the capacitor. Is inversely related to In addition, the Mars voltage varies depending on the type of tantalum electrolytic capacitor, but it is based on three to four times the rated voltage for tantalum solid capacitors and 1.3 to 1.4 times for tantalum thin capacitors, and the dielectric constant of dielectric tantalum oxide film = 23. It is about three times that of the aluminum oxide film corresponding to this seven.
상기와 같은 탄탈 캐패시터의 일반적인 제조방법을 도 1을 참조하여 설명하면 다음과 같다. 도 1에서, 먼저, 성형단계(100)는 탄탈분말에 결합제(binder)역할을 하는 D-Camper를 혼합한 후 용제를 건조 제거시킨다음 평량하여 원통형 또는 각형 펠릿(Pellet)에 양극 리드선인 탄탈선을 삽입시켜 일정한 밀도로 성형을 한다. 소결단계(200)에서는 성형된 소자를 진공소결로에 장진후 10-5∼10-6Torr 정도의 진공중에서 1600℃∼2000℃ 정도로 가열하여 결합제 제거와 동시에 소결을 한다. 화성단계(300)에서는 2개의 전극과 그 사이에 삽입되는 유전체로 구성되는 캐패시터의 유전체를 생성하는 단계로 전해액중에 소결소자를 넣어서 직류전압(화성전압)을 인가하여 탄탈금속의 표면에 산화피막(Ta2O5)을 생성하게 되며, 이것이 유전체가 된다. 소성단계(400)에서는 화성단계(300)에서 생성된 산화피막의 표면에 전해질의 이산화망간층을 형성한다. 즉, 소자의 기공내부에 있는 산화피막의 표면에 이산화망간층을 부착시키기 위하여 질산망간의 수용액중에 소자를 침적하여 함침시킨 후 가열분해하여 이산화망간층을 얻게 된다. 조립단계(500)에서는 소성단계(400)에서 이산화망간층을 형성한 후의 소자에 대해서 외장까지의 필요한 카본도포, 은페이스트도포 및 리드용접을 함으로써 외장공정까지가 완료된다. 에이징(Aging)단계(600)에서는 외장을 완료한 캐패시터는 목표품질, 또는 요구하는 품종에 만족할 만한 조건으로 에이징을 하여 초기불량을 제거한 다음 신뢰성에 대한 롯(lot)판정을 하여 롯에 해당하는 제품은 폐기처분한다. 마킹단계(700)에서는 캐패시터에 절연슬리브를 피복시키거나 필요한 표시(정격전압, 정전용량, 극성표시)를 함으로써 탄탈캐패시터가 제조완료된다.A general manufacturing method of the tantalum capacitor as described above will be described with reference to FIG. 1. In FIG. 1, first, the forming step 100 mixes D-Camper, which acts as a binder to tantalum powder, and then removes and removes the solvent. Insert it to mold to a certain density. In the sintering step 200, the molded device is loaded in a vacuum sintering furnace and heated in a vacuum of about 10 −5 to 10 −6 Torr to about 1600 ° C. to 2000 ° C. and sintered at the same time as the binder is removed. In the chemical conversion step 300, a dielectric of a capacitor composed of two electrodes and a dielectric inserted therebetween is generated. An sintered element is placed in an electrolyte and a direct current voltage is applied to the surface of the tantalum metal. Ta 2 O 5 ), which becomes a dielectric. In the firing step 400, a manganese dioxide layer of an electrolyte is formed on the surface of the oxide film generated in the chemical conversion step 300. In other words, in order to attach the manganese dioxide layer on the surface of the oxide film in the pores of the device, the manganese dioxide layer is obtained by dipping and impregnating the device in an aqueous solution of manganese nitrate. In the assembling step 500, necessary carbon coating, silver paste coating, and lead welding to the exterior of the device after forming the manganese dioxide layer in the firing stage 400 are completed until the exterior processing. In the aging step 600, the completed capacitor is aged under conditions that satisfies the target quality or required varieties to remove initial defects, and then the lot is determined for reliability. Discard. In the marking step 700, the tantalum capacitor is manufactured by coating an insulating sleeve on the capacitor or by making necessary markings (rated voltage, capacitance, polarity indication).
상기 소성단계(400)에서 산화피막의 표면에 전해질로 이산화망간층(MnO2)을 형성하게 되는데, 최근에는 이산화망간층 대신에 전도도가 좋은 고분자인 폴리피롤층(Polypyrrole)을 형성한다.In the firing step 400, a manganese dioxide layer (MnO 2 ) is formed as an electrolyte on the surface of the oxide film, and recently, instead of the manganese dioxide layer, a polypyrrole layer having a good conductivity is formed.
도 2는 종래의 방법으로 제조된 탄탈 캐패시터의 개략적인 부분단면도이다. 도 2를 참조하여 설명하면, 탄탈륨(10)의 표면에는 산화피막(Ta2O5)(12)이 형성되고, 상기 산화피막(Ta2O5)(12)이 표면에 형성된 탄탈륨(10)은 폴리피롤(PPy)용액에 직접 함침시켜 산화피막(Ta2O5)(12)의 표면에 폴리피롤층(14)을 형성시킨다. 상기 폴리피롤층(14)은 전해질층에 해당하며, 상기 폴리피롤층(14)의 표면에는 카본층(16) 및 Ag페이스트층(18)이 형성된다. 상기 산화피막(Ta2O5)(12)이 표면에 형성된 탄탈륨(10)을 폴리피롤용액에 함침시킴으로써 형성시키는 폴리피롤층(14)은 탄탈륨(10)의 내부로 폴리피롤이 침적되어야 전해질의 용량이 좋아진다. 그런데 상기 폴리피롤용액에 탄탈륨을 함침시키게 되면 폴리피롤이 탄탈륨의 내부로 침투하지 못하여 전해질의 용량이 감소되는 원인이 된다. .2 is a schematic partial cross-sectional view of a tantalum capacitor manufactured by a conventional method. Referring to FIG. 2, an tantalum (Ta 2 O 5 ) 12 is formed on the surface of the tantalum 10, and the tantalum 10 on which the oxide (Ta 2 O 5 ) 12 is formed on the surface of the tantalum 10. Silver is directly impregnated into a polypyrrole (PPy) solution to form a polypyrrole layer 14 on the surface of the oxide film (Ta 2 O 5 ) 12. The polypyrrole layer 14 corresponds to an electrolyte layer, and a carbon layer 16 and an Ag paste layer 18 are formed on the surface of the polypyrrole layer 14. The polypyrrole layer 14 formed by impregnating the tantalum 10 formed on the surface of the oxide film Ta 2 O 5 in a polypyrrole solution has a good capacity of electrolyte when polypyrrole is deposited in the tantalum 10. Lose. However, when the polypyrrole solution is impregnated with tantalum, the polypyrrole does not penetrate into the tantalum, causing a decrease in the capacity of the electrolyte. .
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 탄탈 캐패시터의 전해질로 사용되는 폴리피롤이 탄탈소자의 내부로 깊숙히 침투되도록 유전체 산화막의 표면에 코팅시키는 탄탈 캐패시터의 제조방법을 제공하는데 있다.The present invention has been made to solve the above problems, an object of the present invention is a method of manufacturing a tantalum capacitor is coated on the surface of the dielectric oxide film so that the polypyrrole used as the electrolyte of the tantalum capacitor deeply penetrated into the tantalum element. To provide.
도 1은 일반적인 탄탈전해 캐패시터의 제조방법을 개략적으로 나타낸 블럭도이다.1 is a block diagram schematically illustrating a method of manufacturing a general tantalum electrolytic capacitor.
도 2는 종래의 방법으로 제조된 탄탈 캐패시터의 개략적인 부분단면도이다.2 is a schematic partial cross-sectional view of a tantalum capacitor manufactured by a conventional method.
도 3은 본 발명에 따른 탄탈전해 캐패시터의 제조방법을 나타낸 도면이다.3 is a view showing a method of manufacturing a tantalum electrolytic capacitor according to the present invention.
도 4는 본 발명에 따라 제조된 탄탈전해 캐패시터의 부분단면도이다.4 is a partial cross-sectional view of a tantalum electrolytic capacitor manufactured according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
30 : 탄탈륨30: tantalum
상기 목적을 달성하기 위하여 본 발명은 탄탈륨의 표면을 산화시켜 산화피막을 형성시키는 산화피막형성단계; 상기 산화피막이 형성되면 산화피막이 형성된 탄탈륨을 저분자 폴리피롤용액에 1차로 함침시켜 1차폴리피롤층을 형성시키는 1차함침단계; 상기 1차함침단계 다음에 탄탈륨을 고분자 폴리피롤용액에 함침시켜 2차폴리피롤층을 형성시키는 2차함침단계; 상기 2차함침단계 다음에 2차폴리피롤층의 표면에 카본층을 형성시키는 카본층형성단계; 그리고 상기 카본층위에 은(Ag)페이스트층을 형성시키는 은페이스트형성단계를 포함하는 것을 특징으로 하는 탄탈 캐패시터의 제조방법을 제공한다.In order to achieve the above object, the present invention provides an oxide film forming step of oxidizing a surface of tantalum to form an oxide film; Forming a primary polypyrrole layer by first impregnating a tantalum oxide formed thereon into a low molecular polypyrrole solution when the oxide film is formed; A second impregnation step of forming a second polypyrrole layer by impregnating tantalum in the polymer polypyrrole solution after the first impregnation step; A carbon layer forming step of forming a carbon layer on the surface of the secondary polypyrrole layer after the secondary impregnation step; And a silver paste forming step of forming a silver (Ag) paste layer on the carbon layer.
본 발명에 의하면, 탄탈륨(Tantalum)의 표면에 산화피막을 형성시킨 후 탄탈륨을 저분자의 폴리피롤용액에 함침시켜 1차 폴리피롤층을 형성시키고, 2차로 고분자 폴리피롤용액에 탄탈륨을 함침시켜 2차 폴리피롤층을 형성시킨다. 상기 저분자 폴리피롤용액에 탄탈륨을 함침시키면 저분자인 폴리피롤이 탄탈륨의 내부로 신속하게 침투하여 전해질의 특성을 향상시키게 된다.According to the present invention, after forming an oxide film on the surface of tantalum (tantalum), the tantalum is impregnated in a low molecular polypyrrole solution to form a primary polypyrrole layer, and the secondary polypyrrole layer is second impregnated with a polymer polypyrrole solution To form. When the low molecular weight polypyrrole solution is impregnated with tantalum, the low molecular weight polypyrrole rapidly penetrates into the inside of the tantalum to improve the characteristics of the electrolyte.
이하 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
도 3은 본 발명에 따른 탄탈전해 캐패시터의 제조방법을 나타낸 도면이고, 도 4는 본 발명에 따라 제조된 탄탈전해 캐패시터의 부분단면도이다.3 is a view showing a method of manufacturing a tantalum electrolytic capacitor according to the present invention, Figure 4 is a partial cross-sectional view of a tantalum electrolytic capacitor manufactured according to the present invention.
도 3 및 도 4를 참조하여 탄탈전해 캐패시터의 제조방법을 설명하면, 먼저, 탄탈전해 캐패시터를 제조하기 위하여 탄탈분말을 성형공정 및 소결공정을 통해 일정한 크기를 갖는 탄탈소자인 탄탈륨(30)으로 형성시킨다. 상기 탄탈륨(30)은 산화피막형성단계(S10)에서 탄탈륨(30)의 표면을 산화시켜 유전체인 산화피막(32)을 형성시키게 된다. 상기 산화피막형성단계(S10)에서 탄탈륨(30)의 표면에 산화피막(32)이 형성되면 1차함침단계(S20)에서 산화피막이 형성된 탄탈륨을 저분자 폴리피롤용액에 1차로 함침시킴으로써 산화피막(32)의 표면에 1차폴리피롤층(34)을 형성시킨다. 상기 저분자 폴리피롤용액은 분자량이 50,000이하에 해당한다. 상기 1차함침단계(S20)에서 산화피막(32)의 표면에 1차폴리피롤층(34)이 형성되면 2차함침단계(S30)에서는 탄탈륨(30)을 고분자 폴리피롤용액에 함침시키므로써 1차폴리피롤층(34)의 표면에 2차폴리피롤층(36)을 형성시키게 된다. 상기 고분자 폴리피롤용액은 분자량이 50,000∼수 10만의 범위에 해당한다. 상기 2차함침단계(S30)에서 2차폴리피롤층(36)이 형성되면 카본층형성단계(S40)에서는 2차폴리피롤층(36)의 표면에 카본층(38)을 형성시키게 되며, 은페이스트형성단계(S50)에서는 카본층형성단계(S40)에서 형성된 카본층(38)의 표면에는 은(Ag)페이스트층(40)을 형성시키게 된다.Referring to FIGS. 3 and 4, a method of manufacturing a tantalum electrolytic capacitor is described. First, in order to manufacture a tantalum electrolytic capacitor, a tantalum powder is formed of tantalum 30 which is a tantalum element having a predetermined size through a molding process and a sintering process. Let's do it. The tantalum 30 is oxidized the surface of the tantalum 30 in the oxide film forming step (S10) to form an oxide film 32 as a dielectric. When the oxide film 32 is formed on the surface of the tantalum 30 in the oxide film forming step (S10), the oxide film 32 by first impregnating tantalum formed with the oxide film in the low molecular polypyrrole solution in the first impregnation step (S20). The primary polypyrrole layer 34 is formed on the surface thereof. The low molecular weight polypyrrole solution has a molecular weight of 50,000 or less. When the primary polypyrrole layer 34 is formed on the surface of the oxide film 32 in the primary impregnation step (S20), the primary polypyrrole is impregnated by impregnating tantalum 30 in the polymer polypyrrole solution in the second impregnation step (S30). The secondary polypyrrole layer 36 is formed on the surface of the layer 34. The polymer polypyrrole solution has a molecular weight of 50,000 to 100,000. When the secondary polypyrrole layer 36 is formed in the secondary impregnation step (S30), in the carbon layer forming step (S40), the carbon layer 38 is formed on the surface of the secondary polypyrrole layer 36, and silver paste is formed. In the step S50, the silver (Ag) paste layer 40 is formed on the surface of the carbon layer 38 formed in the carbon layer forming step (S40).
이하, 일 실시예를 통해 본 발명을 설명하면, 탄탈분말을 성형공정에서 일정한 크기를 갖는 탄탈소자로 성형된 탄탈륨(30)의 표면에 유전체층인 산화피막(32)을 형성시킨다. 상기 산화피막(32)이 형성된 탄탈륨(30)을 분자량이 50,000이하인 저분자 폴리피롤용액에 함침시키게 된다. 상기 저분자 폴리피롤용액에 탄탈륨이 함침되면 저분자인 폴리피롤이 탄탈륨(30)의 내부로 신속하게 침투를 함과 동시에 표면에 1차폴리피롤층(34)이 얇게 형성되므로 전해질의 용량이 증대된다. 상기 저분자 폴리피롤용액에 탄탈륨을 함침하여 1차폴리피롤층(34)을 형성시킨 다음 분자량이 50,000이상에서 수10만이하인 고분자 폴리피롤용액에 탄탈륨(30)을 함침시키게 된다. 상기 1차폴리피롤층(34)이 형성된 탄탈륨(30)을 고분자 폴리피롤용액에 함침시키게 되면 고분자 폴리피롤이 1차폴리피롤층(34)의 표면에 코팅되어 2차폴리피롤층(36)이 형성된다. 상기 2차폴리피롤층(36)의 표면에는 카본층(38)및 은페이스트층(40)이 형성되므로서 탄탈전해 캐패시터가 완성된다.Hereinafter, the present invention will be described with reference to an embodiment of the present invention. An oxide film 32 as a dielectric layer is formed on a surface of tantalum 30 formed of a tantalum element having a predetermined size in a molding process. The tantalum 30 having the oxide film 32 formed thereon is impregnated into a low molecular weight polypyrrole solution having a molecular weight of 50,000 or less. When the low molecular weight polypyrrole solution is impregnated with tantalum, the low molecular weight polypyrrole rapidly penetrates into the inside of the tantalum 30 and at the same time, a thin primary polypyrrole layer 34 is formed on the surface, thereby increasing the capacity of the electrolyte. Tantalum is impregnated in the low molecular polypyrrole solution to form a primary polypyrrole layer 34 and then impregnated with tantalum 30 in a polymer polypyrrole solution having a molecular weight of 50,000 to 100,000. When the tantalum 30 having the primary polypyrrole layer 34 is impregnated in the polymer polypyrrole solution, the polymer polypyrrole is coated on the surface of the primary polypyrrole layer 34 to form a secondary polypyrrole layer 36. A carbon layer 38 and a silver paste layer 40 are formed on the surface of the secondary polypyrrole layer 36 to complete the tantalum electrolytic capacitor.
따라서, 상기 탄탈륨(30)의 표면에는 저분자 폴리피롤에 의한 얇은 1차 폴리피롤층이 형성된 후 고분자 폴리피롤에 의한 2차 폴리피롤층이 형성되므로 탄탈륨(30)의 내부에 침투된 저분자의 폴리피롤과 고분자의 폴리피롤에 의해 전해질의 용량은 크게 증대된다.Therefore, since the thin primary polypyrrole layer formed by the low molecular polypyrrole is formed on the surface of the tantalum 30, and the secondary polypyrrole layer formed by the polymer polypyrrole is formed on the low molecular polypyrrole and the polypyrrole of the polymer. As a result, the capacity of the electrolyte is greatly increased.
이상 설명에서 알 수 있는 바와 같이, 본 발명은 탄탈륨(Tantalum)의 표면에 산화피막을 형성시킨 후 탄탈륨을 저분자의 폴리피롤용액에 함침시켜 1차 폴리피롤층을 형성시키고, 2차로 고분자 폴리피롤용액에 탄탈륨을 함침시켜 2차 폴리피롤층을 형성시킨다. 상기 저분자 폴리피롤용액에 탄탈륨을 함침시키면 저분자인 폴리피롤이 탄탈륨의 내부로 신속하게 침투하여 전해질의 특성을 향상시키게 된다.As can be seen from the above description, the present invention forms an oxide film on the surface of tantalum and then impregnates tantalum in a low molecular polypyrrole solution to form a primary polypyrrole layer, and secondly, tantalum in a polymer polypyrrole solution. Impregnation forms a secondary polypyrrole layer. When the low molecular weight polypyrrole solution is impregnated with tantalum, the low molecular weight polypyrrole rapidly penetrates into the inside of the tantalum to improve the characteristics of the electrolyte.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030063512A (en) * | 2002-01-22 | 2003-07-31 | 주식회사 기노리텍 | Manufacturing method of hybrid capacitor |
| KR100449627B1 (en) * | 1998-12-09 | 2004-12-17 | 삼성전기주식회사 | A method for manufacturing tantalum electrolytic capacitor using conductive polymer layer |
| KR20050089476A (en) * | 2004-03-05 | 2005-09-08 | 파츠닉(주) | Manufacturing method of tantalum condenser |
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1998
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100449627B1 (en) * | 1998-12-09 | 2004-12-17 | 삼성전기주식회사 | A method for manufacturing tantalum electrolytic capacitor using conductive polymer layer |
| KR20030063512A (en) * | 2002-01-22 | 2003-07-31 | 주식회사 기노리텍 | Manufacturing method of hybrid capacitor |
| KR20050089476A (en) * | 2004-03-05 | 2005-09-08 | 파츠닉(주) | Manufacturing method of tantalum condenser |
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