KR20000025121A - Vacuum gauge of process chamber - Google Patents

Vacuum gauge of process chamber Download PDF

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Publication number
KR20000025121A
KR20000025121A KR1019980042067A KR19980042067A KR20000025121A KR 20000025121 A KR20000025121 A KR 20000025121A KR 1019980042067 A KR1019980042067 A KR 1019980042067A KR 19980042067 A KR19980042067 A KR 19980042067A KR 20000025121 A KR20000025121 A KR 20000025121A
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South Korea
Prior art keywords
vacuum gauge
process chamber
filter
vacuum
grid
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KR1019980042067A
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Korean (ko)
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전진호
김은성
김훈기
한성규
Original Assignee
윤종용
삼성전자 주식회사
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Priority to KR1019980042067A priority Critical patent/KR20000025121A/en
Publication of KR20000025121A publication Critical patent/KR20000025121A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00—Vacuum gauges
    • G01L21/30—Vacuum gauges by making use of ionisation effects
    • G01L21/32—Vacuum gauges by making use of ionisation effects using electric discharge tubes with thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE: A vacuum gauge of a process chamber is provided to protect a wafer from the pollution by preventing thermion, a second thermion, and an electromagnetic wave generated within a vacuum gauge. CONSTITUTION: A vacuum gauge of a process chamber relates to a vacuum gauge of a process chamber having a filter at an entrance of a vacuum gauge. The vacuum gauge comprises a filament(10), a grid(12), and a collector(14). A connection hole(22) is disposed between the vacuum gauge and the process chamber. In the connection hole, a circular cone shaped auxiliary connection hole(16) comprising a circular filter(18) and a plurality of polarizing filter(20) is disposed. A control unit comprises a power amplifier(24) and a measuring device(25).

Description

공정챔버의 진공 게이지Vacuum gauge of process chamber

본 발명은 공정챔버의 진공 게이지에 관한 것으로서, 보다 상세하게는 진공 게이지 입구에 필터를 설치한 공정챔버의 진공 게이지에 관한 것이다.The present invention relates to a vacuum gauge of a process chamber, and more particularly to a vacuum gauge of a process chamber provided with a filter at the inlet of the vacuum gauge.

반도체 제조장치 및 진공정도를 측정하는 설비에 사용되는 게이지가 켜져다 꺼져다 하면서 진공을 측정한다.Gauges used in semiconductor manufacturing equipment and vacuum measuring equipment are turned on and off to measure vacuum.

도1을 참조하면, 공정챔버의 진공 게이지는 필라멘트(101), 그리드(102), 컬렉터(103)로 구성되며, 제어장치는 전원, 증폭기(105)와 계량기(106)등으로 구성된다.Referring to Figure 1, the vacuum gauge of the process chamber is composed of a filament 101, a grid 102, a collector 103, the control device is composed of a power supply, an amplifier 105, a meter 106 and the like.

필라멘트(101)에서 방출되는 음이온 전자와 그리드(102)에 생성되는 회전 전기장을 제어하는 제어장치는 컬렉터(103)에 흐르는 전류를 증폭하여 진공내의 압력으로 연산한다.The control device for controlling the anion electrons emitted from the filament 101 and the rotating electric field generated in the grid 102 amplifies the current flowing through the collector 103 to calculate the pressure in the vacuum.

진공 게이지가 켜져다 꺼져다 하면서 열전자 또는 열전자에 의해 생성되는 2차 열전자 및 이온들의 아웃게싱들로 불리는 전자기파 등이 방출되어 웨이퍼 표면오염 및 막질의 구조적 변형으로 작용하여 반도체 제조공정에 문제를 유발한다. 특히, 폴리-실리사이드 게이트라인 제조공정에 사용되는 게이트 폴리의 표면오염 및 구조적 변형을 가져와 후속 공정인 실리사이드막 형성시 막형성을 방해하며, 실리사이드막 제조공정에 사용되는 실란(SiH4)가스가 육불화텅스텐(WF6)가스와 반응시 텅스텐(W)성분이 많은 막이 형성된다. 상기 막질 후속 열처리시 하부 막질인 게이트 폴리의 증발 및 공정불량이 생기는 문제점이 있다.When the vacuum gauge is turned on and off, electromagnetic waves, called hot electrons or secondary hot electrons and outgassing ions generated by hot electrons, are released, which acts as a wafer surface contamination and structural deformation of the film, causing problems in the semiconductor manufacturing process. . In particular, it causes surface contamination and structural deformation of the gate poly used in the poly-silicide gate line manufacturing process, thereby preventing the formation of a film in the formation of the silicide film, which is a subsequent process, and the silane (SiH 4) gas used in the silicide film manufacturing process is hexafluoride. When reacted with tungsten (WF6) gas, a film containing a large amount of tungsten (W) is formed. During the subsequent heat treatment of the film, there is a problem that evaporation and process defect of the gate poly, which is a lower film, occurs.

본 발명의 목적은, 진공 게이지 내에서 발생된 열전자, 2차 열전자 및 전자기파가 공정챔버로 유입되어 웨이퍼를 오염시키는 것을 방지할 수 있도록 하는 공정챔버의 진공 게이지를 제공하는 데 있다.An object of the present invention is to provide a vacuum gauge of a process chamber which can prevent the hot electrons, secondary hot electrons and electromagnetic waves generated in the vacuum gauge from entering the process chamber and contaminating the wafer.

도1은 종래의 공정챔버의 진공 게이지를 나타낸 개략도이다.1 is a schematic view showing a vacuum gauge of a conventional process chamber.

도2는 본 발명의 일 실시예에 따른 공정챔버의 진공 게이지를 나타내는 개략도이다.2 is a schematic diagram showing a vacuum gauge of a process chamber according to an embodiment of the present invention.

도3은 도2의 요부확대 절개사시도이다.3 is an enlarged perspective view of the main portion enlarged in FIG.

※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing

101,10 : 필라멘트 102,12 : 그리드(grid)101,10: filament 102,12: grid

103,14 : 컬렉터 104,22 : 연결구103,14: Collector 104,22: Connector

105,24 : 증폭기 106,25 : 계량기105,24 Amplifier 106,25 Meter

16 : 보조연결구 18 : 원형 필터16: auxiliary connector 18: round filter

20 : 편광 필터20: polarization filter

상기 목적을 달성하기 위한 본 발명에 따른 공정챔버의 진공 게이지는 필라멘트, 그리드, 컬렉터로 구성되며, 진공 게이지의 입구부분이 공정챔버와 연결되어 진공도를 측정하는 공정챔버의 진공 게이지 있어서, 상기 진공 게이지 입구에 보조연결구가 설치되며, 상기 보조연결구내에는 상기 진공 게이지 입구쪽부터 원형 필터, 편광 필터가 설치되고 상기 편광 필터는 다수개의 판이 서로 엇갈리게 설치될 수 있다.The vacuum gauge of the process chamber according to the present invention for achieving the above object is composed of a filament, a grid, a collector, the vacuum gauge of the process chamber in which the inlet portion of the vacuum gauge is connected to the process chamber to measure the degree of vacuum, the vacuum gauge An auxiliary connector is installed at the inlet, and a circular filter and a polarizing filter are installed in the auxiliary connector from the inlet side of the vacuum gauge, and the polarizing filter may be provided with a plurality of plates alternate with each other.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2 및 도3을 참조하면, 공정챔버의 진공 게이지는 필라멘트(10), 그리드(12), 컬렉터(14)로 구성되며, 진공 게이지와 공정챔버와의 연결구(22)에는 전자파를 차단하는 원형 필터(18)와 복수개의 편광 필터(20)가 설치된 원뿔형 보조연결구(16)가 있으며, 제어장치는 전원, 증폭기(24)와 계량기(25)로 구성된다.2 and 3, the vacuum gauge of the process chamber is composed of a filament 10, a grid 12, and a collector 14, and a circular shape that blocks electromagnetic waves at the connector 22 between the vacuum gauge and the process chamber. There is a conical auxiliary connector 16 in which a filter 18 and a plurality of polarizing filters 20 are installed, and a control device is composed of a power supply, an amplifier 24 and a meter 25.

필라멘트(10)는 많은 음이온 전자를 방출하고, 그리드(12)는 양전하를 띠며 회전 전기장을 형성하여 전자를 끌어 당긴다. 이 과정에서 가스분자와 충돌이 발생하고 양이온으로 이온화된 가스분자들은 컬렉터(14)에 끌리게 된다. 이때, 진공용기 내의 압력에 비례하는 전류가 컬렉터(14)에 발생된다.The filament 10 emits many anion electrons, and the grid 12 is positively charged and forms a rotating electric field to attract electrons. In this process, collisions with gas molecules occur and gas molecules ionized with cations are attracted to the collector 14. At this time, a current is generated in the collector 14 in proportion to the pressure in the vacuum vessel.

좀 더 자세히 살펴보면, 상기 필라멘트(10)에서 방출된 전자는 양의 그리드(12)쪽으로 끌린다. 그렇지만 대부분의 전자는 엉성한 그리드(12)와 충돌하지 못하고, 최종적으로 그리드(12)와 충돌하기 전 몇 회 회전을 한다. 필라멘트(10)에서 방출된 전자의 수가 많기 때문에, 아주 일정한 "전자 구름"이 그리드(12) 근처와 게이지 튜브내 존재한다. 그리드(12) 주위를 오랫동안 회전하여 비행하는 가운데 전자들은 기체분자와 충돌하여 기체분자를 이온화시키고, 따라서 더 많은 전자가 생긴다. 이 전자들의 비행이 오래될수록 충돌의 가능성이 더 커진다. 따라서 더욱 강하고 유용한 신호들이 생성된다.In more detail, the electrons emitted from the filament 10 are attracted toward the positive grid 12. However, most of the electrons do not collide with the poor grid 12 and rotate several times before finally colliding with the grid 12. Because of the large number of electrons emitted from filament 10, a very constant "electron cloud" exists near grid 12 and in the gauge tube. In the long rotation around the grid 12, electrons collide with gas molecules to ionize the gas molecules, thus creating more electrons. The longer these electrons fly, the greater the chance of collision. Thus stronger and useful signals are produced.

양으로 이온화된 기체 분자들은 컬렉터(14)로 끌리게 되는데, 이것은 진공 용기내의 압력에 비례하여 이온 전류를 생성한다. 전류를 증폭하여 계량기(25)로 표시한다. 신빙성 있는 압력을 측정하기 위해서는 게이지의 감도를 알아야 하고, 방출 전류는 잘 조절되어야 한다.Positively ionized gas molecules are attracted to the collector 14, which produces an ionic current proportional to the pressure in the vacuum vessel. The current is amplified and displayed by the meter 25. In order to measure reliable pressure, the sensitivity of the gauge must be known and the emission current must be well controlled.

상기 진공 게이지의 동작으로 발생되는 전자파 등이 공정챔버로 유입되는 것을 방지하기 위하여 공정챔버와의 연결구(22)내에 보조연결구(16)를 설치한다.In order to prevent the electromagnetic wave, etc. generated by the operation of the vacuum gauge from flowing into the process chamber, the auxiliary connector 16 is installed in the connector 22 with the process chamber.

상기 보조연결구(16)내에는 편광 필터(20)가 서로 엇갈리게 설치되어, 직진성을 가지며 방출되는 전자파 형태를 방해하고 판형 그라운드에 일차 필터링될 수 있도록 한다. 이때, 편광 필터(20)의 개수를 조정하여 각각의 필터에서 필터링되는 열전자 또는 전자파를 구분하여 필터링할 수 있다.In the auxiliary connector 16, the polarization filters 20 are staggered with each other, so that they have a straightness and interfere with the emitted electromagnetic wave form and are primarily filtered to the plate-like ground. In this case, the number of polarizing filters 20 may be adjusted to separately filter the hot electrons or the electromagnetic waves filtered by each filter.

또한, 원형 필터(18)가 진공 게이지 입구쪽에 설치되어 편광 필터(20)에서 일차 필터링이 되지 않은 방출물을 원형 필터(18)에서 그라운드로 필터링될 수 있도록 한다. 이때 1차, 2차의 필터링은 서로 다른 가스를 필터링할 수 있도록 한다.In addition, a circular filter 18 is installed at the inlet of the vacuum gauge so that the discharge which is not primary filtered in the polarizing filter 20 can be filtered out of the circular filter 18 to ground. In this case, the first and second filtering may filter different gases.

따라서, 본 발명에 의하면 진공 게이지 입구에 필터를 설치하여 진공 게이지 밖으로 방출되는 열전자, 전자기파를 차단하여 제품의 불량을 줄이면서 게이트 폴리의 증발 및 보이드 형성을 감소시키는 효과가 있다.Therefore, according to the present invention, a filter is installed at the inlet of the vacuum gauge to block hot electrons and electromagnetic waves emitted out of the vacuum gauge, thereby reducing product defects and reducing evaporation and void formation of the gate poly.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (3)

필라멘트, 그리드, 컬렉터로 구성되며, 진공 게이지의 입구부분이 공정챔버와 연결되어 진공도를 측정하는 공정챔버의 진공 게이지에 있어서,In the vacuum gauge of the process chamber consisting of a filament, a grid, a collector, the inlet of the vacuum gauge is connected to the process chamber to measure the degree of vacuum, 상기 진공 게이지 입구에 보조연결구가 설치된 것을 특징으로 하는 공정챔버의 진공 게이지.And a secondary connector is installed at the inlet of the vacuum gauge. 제 1 항에 있어서,The method of claim 1, 상기 보조연결구내에는 상기 진공 게이지 입구쪽부터 원형 필터, 편광 필터가 설치된 것을 특징으로 하는 상기 공정챔버의 진공 게이지.And a circular filter and a polarization filter are installed in the auxiliary connector from the inlet side of the vacuum gauge. 제 2 항에 있어서,The method of claim 2, 상기 편광 필터는 다수개의 판이 서로 엇갈리게 설치되는 것을 특징으로 하는 상기 공정챔버의 진공 게이지.The polarizing filter is a vacuum gauge of the process chamber, characterized in that a plurality of plates are alternately installed.
KR1019980042067A 1998-10-08 1998-10-08 Vacuum gauge of process chamber KR20000025121A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030050908A (en) * 2001-12-19 2003-06-25 삼성전자주식회사 Vacuum guage having improved connecting apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840833A (en) * 1981-09-04 1983-03-09 Toshiba Corp Nitride film production device
JPH02257030A (en) * 1989-03-30 1990-10-17 Canon Inc Ionization vacuum gage provided with superconducting magnetic shield
JPH0566170A (en) * 1991-09-06 1993-03-19 Anelva Corp Ionization vacuum gauge
JPH10153510A (en) * 1996-11-21 1998-06-09 Nec Kansai Ltd Vacuum apparatus and diaphragm vacuum gauge

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840833A (en) * 1981-09-04 1983-03-09 Toshiba Corp Nitride film production device
JPH02257030A (en) * 1989-03-30 1990-10-17 Canon Inc Ionization vacuum gage provided with superconducting magnetic shield
JPH0566170A (en) * 1991-09-06 1993-03-19 Anelva Corp Ionization vacuum gauge
JPH10153510A (en) * 1996-11-21 1998-06-09 Nec Kansai Ltd Vacuum apparatus and diaphragm vacuum gauge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030050908A (en) * 2001-12-19 2003-06-25 삼성전자주식회사 Vacuum guage having improved connecting apparatus

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