KR20000020990A - Spindle fork assembly in semiconductor manufacturing device - Google Patents
Spindle fork assembly in semiconductor manufacturing device Download PDFInfo
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- KR20000020990A KR20000020990A KR1019980039878A KR19980039878A KR20000020990A KR 20000020990 A KR20000020990 A KR 20000020990A KR 1019980039878 A KR1019980039878 A KR 1019980039878A KR 19980039878 A KR19980039878 A KR 19980039878A KR 20000020990 A KR20000020990 A KR 20000020990A
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- rotating plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
본 발명은 반도체장치 제조설비의 스핀들 포크 조립체에 관한 것으로서, 보다 상세하게는 스핀들 포크의 크기를 줄임으로써 상기 스핀들 포크를 히터블록에 쉽게 정렬시키고, 상기 스핀들 포크와 상기 히터블록과의 마찰에 의한 파티클의 발생을 방지하여 웨이퍼에 불량이 일어나는 것을 방지하게 하는 반도체장치 제조설비의 스핀들 포크 조립체에 관한 것이다.The present invention relates to a spindle fork assembly of a semiconductor device manufacturing facility, and more particularly, to easily align the spindle fork to a heater block by reducing the size of the spindle fork, and to a particle caused by friction between the spindle fork and the heater block. The invention relates to a spindle fork assembly of a semiconductor device manufacturing facility which prevents occurrence of defects and thereby prevents defects from occurring in the wafer.
일반적으로 웨이퍼는 사진, 이온확산, 식각, 화학기상증착 및 금속증착 등의 제조공정을 반복적으로 수행한 후 반도체장치인 칩으로 제조된다.In general, a wafer is repeatedly manufactured as a semiconductor device chip after repeatedly performing a manufacturing process such as photography, ion diffusion, etching, chemical vapor deposition, and metal deposition.
상기 제조공정 중, 화학기상증착공정은 사일렌(Silane; SiH4)가스나, 일산화이질소(N2O)가스 등을 사용하여 웨이퍼 상에 산화막 등의 막질을 형성하는 공정으로, 상기 화학기상증착공정을 실시하도록 화학기상증착설비가 구성되었다.In the manufacturing process, the chemical vapor deposition process is a process of forming a film such as an oxide film on the wafer by using a Silane (SiH 4 ) gas, a dinitrogen monoxide (N 2 O) gas, or the like. Chemical vapor deposition equipment was configured to carry out the process.
한편, 상기 화학기상증착설비는 상기 웨이퍼를 가공하는 공정이 실시되는 공정챔버와, 상기 공정챔버의 내부에서 상기 웨이퍼를 일정한 공정위치로 이송시키는 스핀들 포크 조립체를 구비하여 이루어진다.Meanwhile, the chemical vapor deposition apparatus includes a process chamber in which the process of processing the wafer is performed, and a spindle fork assembly for transferring the wafer to a predetermined process position in the process chamber.
상기 스핀들 포크 조립체는 원판형으로 형성된 회전판을 구비하고 있고, 상기 회전판의 측면에는 상기 웨이퍼가 안착되도록 막대형상으로 형성된 스핀들 포크가 설치되어 있으며, 2개의 상기 스핀들 포크가 짝을 이루어 상기 웨이퍼를 안착시키도록 설치되어 있다.The spindle fork assembly includes a rotating plate formed in a disc shape, and a spindle fork formed in a rod shape is installed on a side of the rotating plate, and the two spindle forks are paired to seat the wafer. Is installed.
그리고, 상기 회전판에는 일반적으로 8매의 상기 웨이퍼를 동시에 안착시켜 공정위치로 이동시킬 수 있도록 16개의 상기 스핀들 포크가 2개씩 짝을 이루어 등간격으로 설치되어 있다.In addition, the rotating plate is generally provided at equal intervals in pairs of 16 of the spindle forks so that 8 wafers may be simultaneously seated and moved to a process position.
그리고, 상기 웨이퍼를 순차적으로 상기 스핀들 포크 상에 안착시키도록 상기 회전판을 일정한 각도로 회전 및 승강시키는 스핀들부가 설치되어 있으며, 상기 회전판의 하부에는 상기 웨이퍼를 가열하도록 히터블록이 설치되어 있다.In addition, a spindle unit for rotating and elevating the rotating plate at a predetermined angle is installed so as to sequentially seat the wafer on the spindle fork, and a heater block is installed under the rotating plate to heat the wafer.
상기 히터블록에는 상기 회전판이 상승하고, 회전한 후 다시 하강할 때에 상기 스핀들 포크가 삽입되어 안착되도록 포크홈이 형성되어 있다.The heater block is formed with a fork groove so that the spindle fork is inserted and seated when the rotating plate is raised, rotates, and descends again.
이때, 상기 스핀들 포크의 세로폭은 7.6mm로 형성되고, 상기 포크홈의 세로폭은 8.8mm로 형성되어 있다.At this time, the vertical width of the spindle fork is formed of 7.6mm, the vertical width of the fork groove is formed of 8.8mm.
그러나, 상기 회전판이 하강하여 상기 스핀들 포크가 상기 히터블록에 형성된 상기 포크홈에 안착될 때, 상기 스핀들 포크와 상기 포크홈의 사이에 여유공간이 거의 없어 상기 스핀들 포크가 상기 포크홈의 측면에 접촉하게 되고, 이는 상기 스핀들부에 고장을 유발하여 상기 스핀들 포크를 상기 포크홈에 정렬시키는 것을 어렵게 하는 문제점이 있었다.However, when the rotating plate is lowered and the spindle fork is seated in the fork groove formed in the heater block, there is little free space between the spindle fork and the fork groove so that the spindle fork contacts the side of the fork groove. This causes a problem in the spindle unit, making it difficult to align the spindle fork to the fork groove.
또한, 상기 스핀들 포크와 상기 포크홈의 측면과의 접촉에 의해 파티클이 발생하게 되었고, 이는 상기 웨이퍼에 불량을 일으키는 문제점이 있었다.In addition, particles are generated by contact between the spindle fork and the side surface of the fork groove, which causes a problem in the wafer.
본 발명은 상기와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 스핀들 포크의 세로폭을 줄임으로써 상기 스핀들 포크를 히터블록에 형성된 포크홈에 쉽게 정렬시키고, 상기 스핀들 포크와 상기 포크홈과의 마찰에 의한 파티클의 발생을 방지하여 웨이퍼 불량을 방지하게 하는 반도체장치 제조설비의 스핀들 포크 조립체를 제공하는데 있다.The present invention is to solve the above conventional problems, the object is to easily align the spindle fork to the fork groove formed in the heater block by reducing the vertical width of the spindle fork, the spindle fork and the fork groove Disclosed is a spindle fork assembly of a semiconductor device manufacturing facility which prevents generation of particles due to friction to prevent wafer defects.
도1은 본 발명의 바람직한 일 실시예에 의한 반도체장치 제조설비의 스핀들 포크 조립체를 나타낸 평면도이다.1 is a plan view showing a spindle fork assembly of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.
도2는 도1의 스핀들 포크를 나타낸 사시도이다.Figure 2 is a perspective view of the spindle fork of Figure 1;
※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing
1 : 웨이퍼(Wafer) 2 : 웨이퍼투입구1: Wafer 2: Wafer Inlet
3 : 공정챔버 10 : 스핀들 포크 조립체3: process chamber 10: spindle fork assembly
11 : 회전판 12 : 스핀들 포크(Spindle Fork)11: rotating plate 12: spindle fork
13 : 스핀들부 14 : 히터블록(Heater Block)13: Spindle 14: Heater Block
15 : 포크홈15: fork groove
상기의 목적을 달성하기 위하여 본 발명의 반도체장치 제조설비의 스핀들 포크 조립체는, 웨이퍼를 가공하는 공정이 실시되는 공정챔버 내에 설치되어 상기 웨이퍼를 가열하는 히터블록 상의 공정위치로 상기 웨이퍼가 이동되도록, 상기 웨이퍼가 안착되는 스핀들 포크를 구비하는 회전판과, 상기 회전판을 일정한 각도로 회전 및 승강시키는 스핀들부를 구비하여 이루어지는 반도체장치 제조설비의 스핀들 포크 조립체에 있어서, 상기 스핀들 포크의 세로폭은 5.0mm 내지 7.5mm인 것을 특징으로 한다.In order to achieve the above object, the spindle fork assembly of the semiconductor device manufacturing apparatus of the present invention is installed in a process chamber in which a process of processing a wafer is performed such that the wafer is moved to a process position on a heater block for heating the wafer. In the spindle fork assembly of the semiconductor device manufacturing equipment comprising a rotating plate having a spindle fork to which the wafer is seated, and a spindle portion for rotating and elevating the rotating plate at a predetermined angle, the vertical width of the spindle fork is 5.0mm to 7.5 It is characterized by being mm.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도1을 참조하여 설명하면, 본 발명의 바람직한 일 실시예에 의한 반도체장치 제조설비의 스핀들 포크 조립체(10)는 일측에 웨이퍼(1)가 투입되는 웨이퍼투입구(2)가 형성되고, 내부에 공정가스가 분사되어 상기 웨이퍼(1)를 가공하는 공정이 실시되는 공정챔버(3)의 내부에 설치되어 있다.Referring to Figure 1, the spindle fork assembly 10 of the semiconductor device manufacturing apparatus according to a preferred embodiment of the present invention is formed with a wafer inlet (2) into which the wafer 1 is inserted into one side, the process inside It is provided in the process chamber 3 in which gas is injected and the process of processing the said wafer 1 is performed.
상기 스핀들 포크 조립체(10)는 원판형으로 형성된 회전판(11)을 구비하고 있고, 상기 회전판(11)의 측면에는 상기 웨이퍼(1)가 안착되도록 2개씩 짝을 이루는 스핀들 포크(12)가 설치되어 있다.The spindle fork assembly 10 includes a rotating plate 11 formed in a disc shape, and a pair of spindle forks 12 are installed on the side of the rotating plate 11 so that the wafer 1 is seated in pairs. have.
이때, 상기 스핀들 포크(12)는 막대형상으로 형성되고, 일반적으로 8매의 상기 웨이퍼(1)를 동시에 안착시켜 공정위치로 이동시킬 수 있도록 16개의 상기 스핀들 포크(12)가 2개씩 짝을 이루며 등간격으로 설치되어 있다.At this time, the spindle fork 12 is formed in a rod shape, and in general, the sixteen spindle forks 12 are paired with each other so that the eight wafers 1 can be simultaneously seated and moved to a process position. It is installed at equal intervals.
이때, 도2에 도시한 바와 같이 상기 스핀들 포크(12)의 세로폭(W)은 5.0mm 내지 7.5mm로 형성되는 것이 바람직하고, 본 발명의 바람직한 일 실시예에서는 상기 스핀들 포크(12)의 세로폭(W)을 6.6mm로 형성하였다.At this time, the vertical width (W) of the spindle fork 12, as shown in Figure 2 is preferably formed of 5.0mm to 7.5mm, in a preferred embodiment of the present invention the longitudinal length of the spindle fork 12 The width W was formed to 6.6 mm.
그리고, 상기 스핀들 포크(12)는 상기 공정챔버(3)의 공정온도인 400℃ 이상의 온도에서도 열변형이 발생되지 않고, 상기 웨이퍼(1)를 이동시키는 것이 가능하도록 세라믹(Ceramic)재질로 제작되는 것이 바람직하다.In addition, the spindle fork 12 is made of a ceramic material so that the thermal deformation does not occur even at a temperature of 400 ° C. or higher, which is the process temperature of the process chamber 3, and the wafer 1 can be moved. It is preferable.
다시 도1을 참조하여 설명하면, 상기 웨이퍼(1)를 순차적으로 상기 스핀들 포크(12) 상에 안착시키도록 상기 회전판(11)을 일정각도로 회전 및 승강시키는 스핀들부(13)가 설치되어 있다.Referring again to FIG. 1, a spindle portion 13 is provided to rotate and elevate the rotating plate 11 at a predetermined angle so as to sequentially seat the wafer 1 on the spindle fork 12. .
이때, 상기 스핀들부(13)는 상기 회전판(11)에 연결된 스핀들축(도시하지 않음)을 구비하고 있으며, 상기 스핀들축은 승강이 가능하도록 유압실린더(도시하지 않음)에 연결되어 있고, 회전이 가능하도록 회전구동기(도시하지 않음)에 연결되어 있으며, 따라서 상기 스핀들축은 상기 회전판(11)을 일정한 각도로 회전 및 승강시킨다.At this time, the spindle unit 13 has a spindle shaft (not shown) connected to the rotating plate 11, the spindle shaft is connected to a hydraulic cylinder (not shown) to enable lifting, so as to enable rotation It is connected to a rotary driver (not shown), so that the spindle shaft rotates and lifts the rotary plate 11 at a constant angle.
한편, 상기 회전판(11)의 하부에는 상기 웨이퍼(1)를 가열하는 히터블록(14)이 설치되어 있으며, 상기 히터블록(14)에는 상기 회전판(11)이 상승하고, 회전한 후 다시 하강할 때에 상기 스핀들 포크(12)가 삽입되어 안착되도록 포크홈(15)이 형성되어 있다.On the other hand, the lower portion of the rotating plate 11 is provided with a heater block 14 for heating the wafer 1, the heater block 14 is raised, the rotating plate 11 is to be raised and rotated again. When the spindle fork 12 is inserted into the fork groove 15 is formed.
이때, 상기 포크홈(15)의 세로폭은 8.8mm의 길이로 형성되어 있다.At this time, the vertical width of the fork groove 15 is formed to a length of 8.8mm.
그리고, 상기 회전판(11)과, 스핀들 포크(12)와, 스핀들부(13) 및 히터블록(14) 등 상기 스핀들 포크 조립체(10)를 구성하는 각각의 부품들은 그 연결부위에서 열전달 및 열변형이 일어나지 않도록 세라믹연결부가 구성되어 있으며, 각각의 구성부품들은 나사결합되어 있다.Each of the components constituting the spindle fork assembly 10, such as the rotating plate 11, the spindle fork 12, the spindle portion 13, and the heater block 14, has heat transfer and heat deformation at the connection portion thereof. Ceramic connections are constructed so that they do not occur, and each component is screwed in.
여기서, 상기 스핀들 포크 조립체(10)의 동작관게에 대하여 설명하면, 상기 웨이퍼(1)가 상기 웨이퍼투입구(2)를 통해 상기 공정챔버(3)의 내부로 로딩되어 상기 스핀들 포크(12) 상에 안착되면, 상기 스핀들부(13)는 상기 회전판(11)을 상승시키고, 회전시킨 후 다시 하강시킴으로써 다음 웨이퍼(1)를 안착시킬 준비를 하게 된다.Here, the operation of the spindle fork assembly 10 will be described. The wafer 1 is loaded into the process chamber 3 through the wafer inlet 2 and onto the spindle fork 12. When seated, the spindle unit 13 prepares to seat the next wafer 1 by raising the rotating plate 11, rotating and lowering again.
이러한 동작을 반복하여 수행함으로써 상기 스핀들 포크(12) 상에 상기 웨이퍼(1)를 모두 안착시킨 후에, 상기 공정챔버(3)의 내부에 공정가스를 분사함으로써 상기 웨이퍼(1)를 가공하게 된다.By repeating this operation, the wafer 1 is placed on the spindle fork 12, and then the wafer 1 is processed by spraying a process gas into the process chamber 3.
이때, 상기 스핀들 포크(12)의 세로폭(W)은 6.6mm로 형성되고, 상기 포크홈(15)의 세로폭은 8.8mm로 형성되어 있으므로, 상기 스핀들 포크(12)와 상기 포크홈(15)과의 사이에는 여유공간이 형성된다.In this case, since the vertical width W of the spindle fork 12 is 6.6 mm and the vertical width of the fork groove 15 is 8.8 mm, the spindle fork 12 and the fork groove 15 are formed. Clearance is formed between
따라서, 상기 스핀들 포크(12)가 상기 포크홈(15)의 측벽에 접촉하지 않고 상기 포크홈(15)에 안착되므로, 상기 스핀들 포크(12)를 정렬시키는 작업을 간편하게 실시할 수 있고, 상기 스핀들 포크(12)와 상기 포크홈(15)과의 접촉에 의해 파티클이 발생하는 것을 방지할 수 있다.Therefore, since the spindle fork 12 is seated in the fork groove 15 without contacting the sidewall of the fork groove 15, the operation of aligning the spindle fork 12 can be easily performed. Particles can be prevented from being generated by the contact between the fork 12 and the fork groove 15.
이상에서와 같이 본 발명에 따른 반도체장치 제조설비의 스핀들 포크 조립체에 의하면 스핀들 포크의 세로폭을 줄임으로써 상기 스핀들 포크를 히터블록에 형성된 포크홈에 쉽게 정렬시키고, 상기 스핀들 포크와 상기 히터블록에 형성된 상기 포크홈과의 마찰에 의한 파티클의 발생을 방지하여 웨이퍼에 불량이 발생하는 것을 방지하게 하는 효과를 갖는다.As described above, according to the spindle fork assembly of the semiconductor device manufacturing apparatus according to the present invention, the spindle fork is easily aligned with the fork groove formed in the heater block by reducing the vertical width of the spindle fork, and formed in the spindle fork and the heater block. By preventing the generation of particles by friction with the fork groove has an effect to prevent the occurrence of defects on the wafer.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상범위내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and changes are possible within the technical scope of the present invention, and such modifications and modifications belong to the appended claims.
Claims (2)
Priority Applications (1)
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KR1019980039878A KR20000020990A (en) | 1998-09-25 | 1998-09-25 | Spindle fork assembly in semiconductor manufacturing device |
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KR1019980039878A KR20000020990A (en) | 1998-09-25 | 1998-09-25 | Spindle fork assembly in semiconductor manufacturing device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100434019B1 (en) * | 2001-06-30 | 2004-06-04 | 동부전자 주식회사 | Spindle fork assembly equiped with heater block |
WO2021042551A1 (en) * | 2019-09-03 | 2021-03-11 | 罗博特科智能科技股份有限公司 | Adjustable wafer overturning device |
-
1998
- 1998-09-25 KR KR1019980039878A patent/KR20000020990A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100434019B1 (en) * | 2001-06-30 | 2004-06-04 | 동부전자 주식회사 | Spindle fork assembly equiped with heater block |
WO2021042551A1 (en) * | 2019-09-03 | 2021-03-11 | 罗博特科智能科技股份有限公司 | Adjustable wafer overturning device |
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