KR20000020864A - Panel structure of liquid crystal display - Google Patents

Panel structure of liquid crystal display Download PDF

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Publication number
KR20000020864A
KR20000020864A KR1019980039654A KR19980039654A KR20000020864A KR 20000020864 A KR20000020864 A KR 20000020864A KR 1019980039654 A KR1019980039654 A KR 1019980039654A KR 19980039654 A KR19980039654 A KR 19980039654A KR 20000020864 A KR20000020864 A KR 20000020864A
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KR
South Korea
Prior art keywords
black matrix
film
liquid crystal
crystal display
data line
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KR1019980039654A
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Korean (ko)
Inventor
유세환
박영배
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윤종용
삼성전자 주식회사
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Priority to KR1019980039654A priority Critical patent/KR20000020864A/en
Publication of KR20000020864A publication Critical patent/KR20000020864A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

PURPOSE: A panel structure of liquid crystal display is provided to eliminate inferiority caused by wrong alignment by forming black matrix on the TFT(Thin Film Transistor) substrate. CONSTITUTION: A black matrix(10) is formed on the TFT substrate. On a transparent glass substrate(20), a gate electrode(30) is formed. A gate insulation film(40) is formed on the gate electrode(30). On the gate insulation film(40), an activated layer is formed, a data line(50) is formed in the shape of double layer, and at the same time a source/drain electrode is formed. An oxidation film(60) is formed on the data line(50). A first protection film(70) is formed on the oxidation film. A black matrix is formed on the first protection film(70). A specific portion among the black matrix is formed broadly. On the black matrix, a pixel electrode(100) is formed after a second protection film(90) is formed. The specific black matrix is superposed on the pixel electrode(100).

Description

액정표시장치 패널 구조LCD panel structure

이 발명은 액정표시장치에 관한 것으로서, 더욱 상세하게 말하자면 박막 트랜지스터 기판에 블랙 매트릭스가 형성되는 액정표시장치 패널 구조에 관한 것이다.The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display panel structure in which a black matrix is formed on a thin film transistor substrate.

일반적으로, 액정표시장치 패널은 박막트랜지스터(TFT:Thin Film Transistor, 이하 TFT라고 함)가 형성되어 있는 TFT 기판과 칼라 필터가 형성되어 있는 칼라 필터 기판을 결합하고, 두 기판 사이에 액정을 주입하여 제조된다.In general, a liquid crystal display panel combines a TFT substrate on which a thin film transistor (TFT) is formed and a color filter substrate on which a color filter is formed, and injects liquid crystal between the two substrates. Are manufactured.

한편, 액정표시장치 패널의 칼라 필터 기판에 TFT의 비 구동 영역에서 빛이 새는 것을 막기 위하여 블랙 매트릭스(black matrix)를 형성한다.On the other hand, a black matrix is formed on the color filter substrate of the liquid crystal display panel to prevent light leakage in the non-driving region of the TFT.

이와 같이 블랙 매트릭스를 형성하는 과정중에 작업 공차에 의해 TFT 기판과 칼라 필터 기판 사이에 정렬이 정확하게 이루어지지 않을 경우 블랙 매트릭스는 광 차단막으로서의 역할을 하지 못하게 된다.As such, when the alignment between the TFT substrate and the color filter substrate is not performed correctly due to the work tolerance during the formation of the black matrix, the black matrix may not function as a light blocking film.

이러한 오정렬을 방지하기 위해서 두 기판의 오정렬 마진을 증가시켜야 하는데, 이는 블랙 매트릭스의 CD(Critical Dimension) 확장을 야기하기 때문에 상대적으로 개구율 감소를 가져와 제품의 특성을 열악하게 만든다.To prevent this misalignment, the misalignment margins of the two substrates must be increased, which leads to a reduction of the aperture ratio, resulting in poor product characteristics because it causes the expansion of the black (CD) critical dimension.

따라서, 이 발명의 목적은 상기한 종래의 문제점을 해결하기 위한 것으로서, TFT 기판 제조 공정 중에 TFT 기판에 블랙 매트릭스를 형성함으로서, 오정렬에 의한 불량을 제거하는 액정표시장치 패널 구조를 제공하는 데 있다.Accordingly, an object of the present invention is to provide a liquid crystal display panel structure which eliminates defects caused by misalignment by forming a black matrix on a TFT substrate during a TFT substrate manufacturing process.

도 1은 이 발명의 실시예에 따른 액정표시장치 패널의 TFT 기판의 배치도이고,1 is a layout view of a TFT substrate of a liquid crystal display panel according to an embodiment of the present invention;

도 2는 도 1의 A부분 단면도이고,2 is a cross-sectional view of portion A of FIG.

도 3은 도 1의 B부분 단면도이고,3 is a cross-sectional view of portion B of FIG.

도 4는 이 발명의 실시예에 따른 액정표시장치 패널의 리페어 구조를 도시한 도면이다.4 illustrates a repair structure of a liquid crystal display panel according to an exemplary embodiment of the present invention.

상기한 목적을 달성하기 위한 수단으로서 이 발명은 TFT 기판의 1차 보호막과 2차 보호막 사이에 블랙 매트릭스가 형성되는 것을 특징으로 한다.As a means for achieving the above object, the present invention is characterized in that a black matrix is formed between the primary protective film and the secondary protective film of the TFT substrate.

이하, 이 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 이 발명을 용이하게 실시할 수 있는 실시예를 첨부된 도면을 참조로 하여 상세히 설명한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention may be easily implemented by those skilled in the art with reference to the accompanying drawings.

도 1은 이 발명의 실시예에 따른 액정표시장치 패널의 TFT 기판의 배치도이고, 도 2는 A부분 단면도이고, 도 3은 B부분 단면도이다.1 is a layout view of a TFT substrate of a liquid crystal display panel according to an exemplary embodiment of the present invention, FIG. 2 is a cross-sectional view of part A, and FIG.

도 1 내지 도 4에 도시되어 있듯이, 이 발명의 실시예에 따른 액정표시장치 패널에서 블랙 매트릭스(10)가 TFT 기판에 형성되어 있다.1 to 4, in the liquid crystal display panel according to the embodiment of the present invention, a black matrix 10 is formed on the TFT substrate.

1차 보호막이 형성되어 있는 TFT 기판의 구조는 도 2의(a) 및 도 3의(a)에 도시되어 있다.The structure of the TFT substrate on which the primary protective film is formed is shown in Figs. 2A and 3A.

투명 글래스 기판(20) 위에 게이트 전극(30)이 형성되어 있고, 그 위에 게이트 절연막(40)이 형성되어 있다.The gate electrode 30 is formed on the transparent glass substrate 20, and the gate insulating film 40 is formed on it.

게이트 절연막(40) 위에 활성층(45)이 형성되어 있고, 데이터 라인(50)이 2중막 형태로 형성되는 동시에 소스/드레인 전극(55)이 형성되어 있다.The active layer 45 is formed on the gate insulating film 40, the data line 50 is formed in a double film form, and the source / drain electrodes 55 are formed.

그 위에 산화막(60)이 형성되어 있고, 산화막(60) 위에 1차 보호막(70)이 형성되어 있다.An oxide film 60 is formed thereon, and a primary protective film 70 is formed on the oxide film 60.

도 2의(b) 및 도 3의(b)에 도시되어 있듯이, TFT 기판의 1차 보호막(70) 위에 블랙 매트릭스(10)를 형성하며, 블랙 매트릭스(10) 중 특정 부분(80)은 좀 더 넓게 형성된다.As shown in FIGS. 2B and 3B, a black matrix 10 is formed on the primary passivation layer 70 of the TFT substrate, and a specific portion 80 of the black matrix 10 may be formed. It is formed more widely.

이와 같이, TFT 기판 제조 공정시 블랙 매트릭스를 함께 형성하기 때문에 오정렬에 의한 불량이 발생하지 않는다.As such, since the black matrix is formed together in the TFT substrate manufacturing process, defects due to misalignment do not occur.

도 2의(c) 및 도 3의(c)에 도시되어 있듯이, 블랙 매트릭스(10) 위에 2차 보호막(90)을 형성한 후, 도 2의(d) 및 도 3의(d)에 도시되어 있듯이, 화소 전극(100)을 형성한다.As shown in FIG. 2 (c) and FIG. 3 (c), after forming the secondary protective film 90 on the black matrix 10, it is shown in FIG. 2 (d) and FIG. 3 (d). As shown, the pixel electrode 100 is formed.

이 때, 특정 블랙 매트릭스(80)는 화소 전극(100)과 겹치게 형성되어 있다.In this case, the specific black matrix 80 is formed to overlap the pixel electrode 100.

도 4는 이 발명의 실시예에 따른 액정표시장치 패널의 리페어(repair) 구조를 도시한 도면이다.4 is a diagram illustrating a repair structure of a liquid crystal display panel according to an exemplary embodiment of the present invention.

도 4의(a)에 도시되어 있듯이, 데이터 라인(50)이 오픈되었을 때에는 1차 보호막(70)과 2차 보호막(90) 사이에 형성된 블랙 매트릭스(10)와 데이터 라인(50)을 레이저를 C방향으로 사용하여 연결시켜서 데이터 라인(50)이 블랙 매트릭스(10)를 통하여 연결되도록 한다.As shown in FIG. 4A, when the data line 50 is opened, the black matrix 10 and the data line 50 formed between the primary passivation layer 70 and the secondary passivation layer 90 The data line 50 is connected through the black matrix 10 by using the connection in the C direction.

따라서, 데이터 라인(50) 오픈이 발생하더라도 리페어가 가능해진다.Therefore, even if the data line 50 is opened, repair is possible.

또한, 도 4의(b)에 도시되어 있듯이, 화소 전극(100)에 결함이 발생하였을 때 화소 전극(100)과 겹쳐지도록 형성되어 있는 특정 블랙 매트릭스(80)와 화소 전극(100)을 레이저를 D방향으로 사용하여 연결시켜서 화소 전극(100)의 리페어가 가능해진다.In addition, as illustrated in FIG. 4B, when a defect occurs in the pixel electrode 100, the specific black matrix 80 and the pixel electrode 100 that are formed to overlap the pixel electrode 100 may be laser-fired. The pixel electrode 100 can be repaired by using it in the D direction.

이상에서와 같이 이 발명의 실시예에서, TFT 기판 제조 공정 중에 TFT 기판에 블랙 매트릭스를 형성함으로서, 오정렬에 의한 불량을 제거하는 액정표시장치 패널 구조를 제공할 수 있다.As described above, in the embodiment of the present invention, by forming the black matrix on the TFT substrate during the TFT substrate manufacturing process, it is possible to provide a liquid crystal display panel structure that eliminates defects due to misalignment.

비록, 이 발명이 가장 실제적이며 바람직한 실시예를 참조하여 설명되었지만, 이 발명은 상기 개시된 실시예에 한정되지 않으며, 후술되는 특허청구범위 내에 속하는 다양한 변형 및 등가물들도 포함한다.Although this invention has been described with reference to the most practical and preferred embodiments, the invention is not limited to the embodiments disclosed above, but also includes various modifications and equivalents within the scope of the following claims.

Claims (2)

게이트 전극 위에 게이트 절연막이 형성되어 있고, 상기 게이트 절연막 위에 데이터 라인이 형성되어 있고, 상기 데이터 라인 위에 1차 보호막이 형성되어 있고, 상기 1차 보호막 위에 2차 보호막이 형성되어 있고, 상기 2차 보호막 위에 화소 전극이 형성되어 있는 액정표시장치 패널 구조에서, 상기 1차 보호막과 상기 2차 보호막 사이에 블랙 매트릭스를 형성하는 것을 특징으로 하는 액정표시장치 패널 구조.A gate insulating film is formed on the gate electrode, a data line is formed on the gate insulating film, a primary protective film is formed on the data line, a secondary protective film is formed on the primary protective film, and the secondary protective film And a black matrix is formed between the primary passivation layer and the secondary passivation layer in the liquid crystal display panel structure having the pixel electrode formed thereon. 제1항에 있어서,The method of claim 1, 상기 데이터 라인을 따라서 형성되어 있는 블랙 매트릭스 중 특정 부분이 상기 화소 전극과 겹쳐지도록 형성되어 있는 액정표시장치 패널 구조.And a specific portion of the black matrix formed along the data line overlaps the pixel electrode.
KR1019980039654A 1998-09-24 1998-09-24 Panel structure of liquid crystal display KR20000020864A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685311B1 (en) * 2000-02-21 2007-02-22 엘지.필립스 엘시디 주식회사 Apparatus of Liquid Crystal Display and Fabricating Method thereof
US8937361B2 (en) 2011-02-03 2015-01-20 Digitaloptics Corporation BSI image sensor package with variable-height silicon for even reception of different wavelengths
US9041133B2 (en) 2011-02-03 2015-05-26 Nan Chang O-Film Optoelectronics Technology Ltd BSI image sensor package with embedded absorber for even reception of different wavelengths

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07181515A (en) * 1993-12-22 1995-07-21 Fujitsu Ltd Production of liquid crystal display device
JPH09218424A (en) * 1995-12-08 1997-08-19 Lg Semicon Co Ltd Liquid crystal display element of thin-film transistors and its production
JPH09269510A (en) * 1996-04-01 1997-10-14 Semiconductor Energy Lab Co Ltd Liquid crystal display device and its manufacture
JPH09292628A (en) * 1996-04-25 1997-11-11 Sharp Corp Liquid crystal display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07181515A (en) * 1993-12-22 1995-07-21 Fujitsu Ltd Production of liquid crystal display device
JPH09218424A (en) * 1995-12-08 1997-08-19 Lg Semicon Co Ltd Liquid crystal display element of thin-film transistors and its production
JPH09269510A (en) * 1996-04-01 1997-10-14 Semiconductor Energy Lab Co Ltd Liquid crystal display device and its manufacture
JPH09292628A (en) * 1996-04-25 1997-11-11 Sharp Corp Liquid crystal display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685311B1 (en) * 2000-02-21 2007-02-22 엘지.필립스 엘시디 주식회사 Apparatus of Liquid Crystal Display and Fabricating Method thereof
US8937361B2 (en) 2011-02-03 2015-01-20 Digitaloptics Corporation BSI image sensor package with variable-height silicon for even reception of different wavelengths
US9041133B2 (en) 2011-02-03 2015-05-26 Nan Chang O-Film Optoelectronics Technology Ltd BSI image sensor package with embedded absorber for even reception of different wavelengths

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