KR20000019254A - Device for improving thin film thickness uniformity of cvd - Google Patents

Device for improving thin film thickness uniformity of cvd Download PDF

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Publication number
KR20000019254A
KR20000019254A KR1019980037242A KR19980037242A KR20000019254A KR 20000019254 A KR20000019254 A KR 20000019254A KR 1019980037242 A KR1019980037242 A KR 1019980037242A KR 19980037242 A KR19980037242 A KR 19980037242A KR 20000019254 A KR20000019254 A KR 20000019254A
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KR
South Korea
Prior art keywords
shower head
thin film
cvd
vacuum sealing
thickness uniformity
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KR1019980037242A
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Korean (ko)
Inventor
석창길
최진광
이현정
강창훈
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석창길
주식회사 울텍
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Priority to KR1019980037242A priority Critical patent/KR20000019254A/en
Publication of KR20000019254A publication Critical patent/KR20000019254A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE: A device for improving a thin film thickness uniformity of CVD does not fix a shower head of CVD, rotates the shower head, and improves a uniform thickness of thin film. CONSTITUTION: A device for improving a thin film thickness uniformity mounts a vacuum sealing shower head rotation shaft(8) and a vacuum sealing rotation transmission device(9) to a shower head of CVD, and mounts a rpm control motor. Thereby, a rotation number of a shower head(5) is accurately controlled, and a thin film of uniform thickness is made.

Description

화학 기상 증착 장치의 박막 두께 균일도 개선을 위한 장치Device for Improving Thin Film Thickness Uniformity in Chemical Vapor Deposition Equipment

화학 기상 증착 장치는 반응 가스들의 화학적 반응을 이용하여 금속막, 고유전율 박막, 저유전율 박막과 같은 반도체 박막을 증착하는데 사용되는 장치이다.A chemical vapor deposition apparatus is a device used to deposit a semiconductor thin film such as a metal film, a high dielectric constant thin film, a low dielectric constant thin film by using a chemical reaction of the reaction gases.

종래의 화학 기상 증착 장치는 샤워헤드와 전기히터 모두가 고정되어 있는 방식이나, 샤워헤드는 고정되어 있고 전기히터를 회전시키는 방식이 사용되고 있다. 전기히터의 온도균일도가 증착되는 박막의 두께 균일도에 영향을 미친다. 웨이퍼에 증착되는 박막의 두께는 웨이퍼의 중앙부분이 웨이퍼의 바깥부분보다 두껍게 증착된다. 샤워헤드와 전기히터 모두가 고정되어 있는 방식의 경우에는 박막의 두께 균일도를 개선하기 위해서는 히터의 온도균일도가 개선이 되어야 한다. 샤워헤드를 고정시키고 전기히터를 회전시키는 방식의 경우에는 전기히터를 회전시키기 위해서 전기히터와 연결되어 있는 진공장치, 전선, 냉각장치, 온도 조절장치등과 같은 구성품들이 복잡하게 구성되어져야 하고, 전기히터의 상·하 이동장치와 동시에 장착이 될 경우에는 전기히터 회전장치의 설치 공간이 제약을 받을 수 있다.In the conventional chemical vapor deposition apparatus, both the shower head and the electric heater are fixed, but the shower head is fixed and the electric heater is rotated. The temperature uniformity of the electric heater affects the thickness uniformity of the deposited film. The thickness of the thin film deposited on the wafer is deposited so that the central portion of the wafer is thicker than the outer portion of the wafer. In the case where both the shower head and the electric heater are fixed, the temperature uniformity of the heater must be improved to improve the thickness uniformity of the thin film. In the case of fixing the shower head and rotating the electric heater, components such as a vacuum device, an electric wire, a cooling device, and a temperature controller connected to the electric heater must be complicated to rotate the electric heater. When the heater is mounted at the same time as the up and down moving device of the heater, the installation space of the electric heater rotating device may be restricted.

본 발명은 상기한 바와 같은 종래의 기술의 문제점을 보완하여 웨이퍼에 증착되는 박막의 두께 균일도 저해 요인을 개선하기 위한 것으로 샤워헤드를 회전시켜 박막의 두께 균일도를 개선하고자 한다.The present invention is to improve the thickness uniformity inhibiting factors of the thin film deposited on the wafer by complementing the problems of the prior art as described above to improve the thickness uniformity of the thin film by rotating the shower head.

도 1은 본 발명에 관련하는 반응기와 샤워헤드의 구성도1 is a block diagram of a reactor and a showerhead according to the present invention

도 2는 본 발명에 관련하는 진공 씰링(sealing) 샤워헤드 회전축과 진공 씰링(sealing) 회전 전달장치의 상세도2 is a detailed view of a vacuum sealing shower head rotating shaft and a vacuum sealing rotating transmission device according to the present invention.

1 : 반응기, 2: 전기히터, 3 : 전기히터 상·하 이동장치, 4 : 웨이퍼,1: reactor, 2: electric heater, 3: electric heater up and down transfer device, 4: wafers,

5 : 샤워헤드, 6 : 회전 벨트, 7 : 회전수 제어용 모터,5: showerhead, 6: rotating belt, 7: motor for rotation speed control,

8 : 진공 씰링(sealing) 샤워헤드 회전축,8: rotating shaft of the vacuum sealing shower head,

9 : 진공 씰링(sealing) 회전 전달장치, 10 : 반응 가스 유입구,9: vacuum sealing rotary transmission device, 10: reaction gas inlet,

11 : 가스 혼합기,11: gas mixer,

본 발명은 기존의 화학 기상 증착 장치를 변형하여 샤워헤드가 회전이 가능하도록 구성한 것으로 웨이퍼에 증착되는 박막의 두께 균일도 개선을 목표로 하고 있다.The present invention aims to improve the thickness uniformity of a thin film deposited on a wafer by modifying an existing chemical vapor deposition apparatus so that the shower head can be rotated.

샤워헤드를 통해 반응 가스를 반응기로 유입 시키면서 샤워헤드를 회전시키면 원심력에 의해 샤워헤드에서 반응기로 유입되는 반응 가스의 흐름이 웨이퍼의 중앙부분보다는 웨이퍼의 바깥부분으로 치우쳐짐으로써 박막이 웨이퍼의 중앙부분에 더 두껍게 증착되는 현상을 개선할 수 있다. 반응 가스의 흐름이 웨이퍼의 바깥쪽부분으로 치우쳐지는 정도는 샤워헤드의 회전수를 조절함으로써 조절이 가능하다. 샤워헤드의 회전수는 모터의 회전수를 제어함으로써 조절이 가능하다. 샤워헤드의 회전수를 증가 시키면 반응 가스의 흐름이 바깥쪽으로 치우쳐지는 정도가 증가하고 샤워헤드의 회전수를 감소 시키면 반응 가스의 흐름이 바깥쪽으로 치우쳐지는 정도가 감소한다.Rotating the showerhead while introducing the reaction gas into the reactor through the showerhead causes the flow of reactant gas from the showerhead to the reactor by centrifugal force to the outside of the wafer rather than to the center of the wafer. It is possible to improve the deposition on the thicker. The degree to which the flow of the reaction gas is biased to the outer portion of the wafer can be controlled by adjusting the rotation speed of the shower head. The rotation speed of the shower head can be adjusted by controlling the rotation speed of the motor. Increasing the number of rotations of the showerhead increases the degree of the reaction gas flow outwardly, and decreasing the number of rotations of the showerhead decreases the degree of the reaction gas flow outwardly.

도 1에서처럼 샤워헤드에 진공 씰링(sealing) 샤워헤드 회전축을 연결하고 여기에 진공 씰링(sealing) 회전 전달장치를 설치한다. 진공 씰링(sealing) 회전 전달장치는 회전 제어용 모터와 벨트로 연결되어 모터의 회전수를 진공 씰링(sealing) 샤워헤드 회전축에 전달하게 된다. 본 발명에 사용되는 모터는 회전수를 제어할 수 있도록 제작된 것이다. 따라서 모터의 회전수를 변화 시킴으로써 샤워헤드의 회전수의 조절이 가능하다. 도 2에서처럼 본 발명에서 사용되는 진공 씰링(sealing) 샤워헤드 회전축은 중앙의 축에 구멍을 뚫어 관의 형태로 가공하였다. 가스 혼합기로 들어온 반응가스는 관의 형태로 가공된 회전축을 통해 샤워헤드와 반응기로 들어가게 된다. 가스 혼합기는 가스 유입구를 통해 유입된 이종의 가스 또는 기화된 유기 금속 소스와 반응가스 등을 혼합시켜 주는 혼합기의 역할을 하게 된다. 모터를 회전 시켰을때 반응 가스 유입구와 가스 혼합기는 회전시키지 않고 진공 씰링(sealing) 회전 전달장치와 진공 씰링(sealing) 샤워헤드 회전축만 회전시켜 진공을 유지하면서 샤워헤드가 회전될 수 있도록 구성하였다.As shown in FIG. 1, a vacuum sealing shower head rotation shaft is connected to the shower head, and a vacuum sealing rotation transmission device is installed therein. The vacuum sealing rotation transmission device is connected to the rotation control motor and the belt to transmit the rotational speed of the motor to the vacuum sealing shower head rotation shaft. The motor used in the present invention is manufactured to control the rotation speed. Therefore, the rotation speed of the shower head can be adjusted by changing the rotation speed of the motor. As shown in FIG. 2, the rotating shaft of the vacuum sealing shower head used in the present invention was formed in the form of a tube by drilling a hole in the central axis. Reaction gas entering the gas mixer enters the showerhead and the reactor through a rotating shaft processed in the form of a tube. The gas mixer serves as a mixer that mixes heterogeneous gas or vaporized organometallic source and reactant gas introduced through the gas inlet. When the motor is rotated, the reaction gas inlet and the gas mixer are configured to rotate the vacuum sealing rotating transmission device and the vacuum sealing shower head rotating shaft without rotating the rotating shower head while maintaining the vacuum.

이상 설명한 바와 같이 본 발명은 박막 두께 균일도 개선을 위한 장치는 회전모터와 진공 씰링(sealing) 회전 전달 장치와 진공 씰링(sealing) 샤워헤드 회전축을 사용함으로써 진공을 유지하기 위한 별도의 장치를 설치하지 않아도 되므로 설치가 용이하고, 회전수를 제어할 수 있는 모터를 사용함으로써 샤워헤드의 회전수를 정확하게 제어하여 박막의 두께 균일도를 보다 쉽게 개선할 수 있는 효과가 있다.As described above, in the present invention, the device for improving the uniformity of the thin film thickness does not need to install a separate device for maintaining vacuum by using a rotating motor, a vacuum sealing rotation transmission device, and a vacuum sealing shower head rotation shaft. Therefore, it is easy to install, and by using a motor that can control the number of revolutions by controlling the number of revolutions of the shower head accurately there is an effect that can be more easily improved the thickness uniformity of the thin film.

Claims (2)

화학 기상 증착 장치의 샤워헤드에 진공 씰링(sealing) 샤워헤드 회전축과진공 씰링(sealing) 회전 전달장치 그리고, 회전수 제어용 모터를 설치하여 진공을 유지하면서 샤워헤드를 회전시키는 장치.An apparatus for rotating a shower head while maintaining a vacuum by installing a vacuum sealing shower head rotation shaft and a vacuum sealing rotation transmission device on a shower head of a chemical vapor deposition apparatus, and a rotation speed control motor. 청구항1의 장치를 이용하여 도입된 가스가 일정하게 분포되게 하여 웨이퍼에 증착되는 박막의 두께 균일도를 개선시킬 수 있는 장치.Apparatus capable of improving the uniformity of the thickness of the thin film deposited on the wafer by allowing the gas introduced using the apparatus of claim 1 to be uniformly distributed.
KR1019980037242A 1998-09-08 1998-09-08 Device for improving thin film thickness uniformity of cvd KR20000019254A (en)

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