KR20000007216A - Bolometer for absorbing infra-red rays and method of fabricating the same - Google Patents
Bolometer for absorbing infra-red rays and method of fabricating the same Download PDFInfo
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- KR20000007216A KR20000007216A KR1019980026420A KR19980026420A KR20000007216A KR 20000007216 A KR20000007216 A KR 20000007216A KR 1019980026420 A KR1019980026420 A KR 1019980026420A KR 19980026420 A KR19980026420 A KR 19980026420A KR 20000007216 A KR20000007216 A KR 20000007216A
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000010521 absorption reaction Methods 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 4
- 229910020286 SiOxNy Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000035882 stress Effects 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002195 soluble material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
Description
본 발명은 물체가 방사하고 있는 각종 적외선(온도)을 검출하는 볼로메터에 관한 것으로, 더욱 상세하게는 흡수대를 실리콘 산화 질화물로 형성하여 흡수대의 휨을 방지하기 위한 적외선 흡수 볼로메터 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ballometer for detecting various infrared rays (temperature) emitted by an object, and more particularly, to an infrared absorption ballometer for preventing the bending of the absorption band by forming the absorption band from silicon oxynitride, and a method of manufacturing the same. will be.
일반적으로 볼로메터는 적외선 센서의 일종으로서, 물체에서 방사되는 적외선을 흡수하여 열에너지로 바뀔 때 그로 인한 온도상승으로 전기저항이 변화하는 것을 측정하여 집적 접촉하지 않아도 물체 표면의 온도를 감지할 수 있는 특징을 가진다.In general, a bolometer is a kind of infrared sensor, which absorbs infrared rays emitted from an object and measures the change in electrical resistance due to the temperature rise due to the change in thermal energy. Has
적외선은 파장이 가시광보다 길고 전파보다 짧은 전자파의 일종으로 자연계에 존재하는 물체는 사람을 비롯하여 모두 적외선을 방사하고 있다. 단, 물체의 온도에 따라 그 파장이 다르므로 온도검출이 가능하다.Infrared is a kind of electromagnetic wave whose wavelength is longer than visible light and shorter than radio waves. All objects in nature emit infrared rays, including humans. However, since the wavelength is different depending on the temperature of the object, temperature detection is possible.
이와 같은 볼로메터는 금속 또는 반도성 재료를 이용하여 제조된다. 금속 볼로메터 요소는 온도의 변화에 자유전자의 밀도가 지수적으로 변화하는 특성을 가지며, 반도성 재료 볼로메터 요소는 온도변화에 따른 저항변화의 큰 민감성을 얻을 수 있다. 그러나 반도성 재료 볼로메터는 박막형으로 제조하기가 어려워 실용화되기 어려운 문제점이 있다.Such bolometers are manufactured using metal or semiconducting materials. The metal bolometer element has the characteristic that the density of free electrons changes exponentially with the change of temperature, and the semiconducting material bolometer element can obtain a great sensitivity of resistance change with temperature change. However, the semiconducting material bolometer is difficult to be manufactured in a thin film type, which makes it difficult to be practical.
도 1 및 도 2는 종래의 일실시예에 따른 볼로메터를 예시한 것으로, 미합중국 특허 No.5,300,915에 "열센서(THERMAL SENSOR)"라는 명칭으로 공개되어 있다.1 and 2 illustrate a bolometer according to a conventional embodiment, which is disclosed under the name "THERMAL SENSOR" in US Patent No. 5,300,915.
도 1은 종래의 일실시예에 따른 볼로메터를 도시한 단면도이고, 도 2는 도 1의 사시도를 개략적으로 도시한 도면이다.1 is a cross-sectional view showing a bolometer according to a conventional embodiment, Figure 2 is a schematic view showing a perspective view of FIG.
종래의 볼로메터(10)는 부상된 검출레벨(11)과 하부레벨(12)로 이루어져 있다. 상기 하부레벨(12)은 단결정 실리콘 기판과 같은 상부가 평평한 반도성 기판(13)을 가지고 있다. 상기 반도성 기판(13)의 상부표면(14) 위에는 다이오드, X-버스라인, Y-버스라인, 접속단자, X-버스라인의 끝에 위치하는 접촉패드 등을 구비하는 집적회로(15)가 통상적인 실리콘 집적회로 제조기술을 이용하여 제조되어 있다. 상기 집적회로(15)는 실리콘 질화막(16)으로 만들어진 보호층으로 코팅되어 있다. 선형으로 패인 도랑(17)은 부상된 검출레벨(11)에 의해 덮여져 있지 않다.The conventional ballometer 10 consists of a floating detection level 11 and a lower level 12. The lower level 12 has a semiconductive substrate 13 having a flat top surface, such as a single crystal silicon substrate. On the upper surface 14 of the semiconductor substrate 13, an integrated circuit 15 having a diode, an X-bus line, a Y-bus line, a connection terminal, and a contact pad positioned at the end of the X-bus line is typically used. It is manufactured using the silicon integrated circuit manufacturing technology. The integrated circuit 15 is coated with a protective layer made of silicon nitride film 16. The trench 17 linearly recessed is not covered by the floating detection level 11.
부상된 검출레벨(11)은 실리콘 질화막층(20), 연속적인 'ㄹ'자형으로 형성된 저항 노선(21), 실리콘 질화막층(20)과 연속적인 'ㄹ'자형으로 형성된 저항노선(21) 위에 형성된 또다른 실리콘 질화막층(22), 실리콘 질화막층(22) 위에 형성된 적외선 흡수코팅(23) 등으로 이루어져 있다. 아래쪽으로 뻗어있는 실리콘 질화막층(20')(22')은 상기 부상된 검출레벨(11)을 지지하는 기울어진 네 개의 다리를 만드는 동안 동시에 만들어진다. 상기 다리는 네 개보다 적을수도 많을수도 있다. 두 레벨사이에는 빈공간(26)이 형성되어 서로 이격되어 있다. 제조공정동안, 상기 빈공간(26)은 실리콘 질화막층(20)(20')(22)(22')이 증착될 때까지 용해성 유리나 용해성 재료로 제거되기 쉬운 재료로 증착되어 채워져 있다가 용해성유리나 용해성재료가 제거되어 빈공간으로 남게된다.The floating detection level 11 is formed on the silicon nitride film layer 20, the resistance line 21 formed in the continuous 'L' shape, and the resistance line 21 formed in the continuous 'L' shape with the silicon nitride film layer 20. Another silicon nitride film layer 22 formed, infrared absorption coating 23 formed on the silicon nitride film layer 22, and the like. The silicon nitride film layers 20 'and 22' extending downward are made simultaneously while making four inclined legs supporting the injured detection level 11. The legs may be less than four or more. An empty space 26 is formed between the two levels so as to be spaced apart from each other. During the manufacturing process, the void 26 is deposited and filled with a material that is easily removed by soluble glass or a soluble material until the silicon nitride film layers 20, 20 ', 22, and 22' are deposited. The soluble material is removed and left empty.
상기 기술된 볼로메터에 있는 하나의 결점은 도 2에 도시된 바와 같이, 부상된 검출레벨(11)에 지지역활을 하는 다리가 함께 형성되어 있어서 적외선을 흡수하는 전체면적이 줄어들기 때문에 최대의 흡수면적(Fill Factor)을 얻을 수 없다.One drawback in the above-described bolometer is that as shown in Fig. 2, maximum absorption is achieved because the bridges that support the local area are formed together at the injured detection level 11, thereby reducing the total area absorbing infrared rays. Fill factor cannot be obtained.
이와 같은 문제점을 해결하기 위해 본 출원인은 증가된 흡수면적(Fill Factor)을 갖도록 한 볼로메터 및 그 제조방법에 대하여 대한민국 특허청에 1998년 월 일자로 특허출원번호 제 98- 호 및 제 호로 출원하였다.In order to solve this problem, the present applicant filed a patent application No. 98- and No. 98 dated to the Korean Intellectual Property Office on the ballometer and its manufacturing method to have an increased fill factor.
도 3은 선출원된 볼로메터를 나타내는 사시도로서, 구동기판 레벨(210), 지지레벨(220), 적어도 한쌍 이상의 포스트(270), 흡수레벨(230)로 구성된다.FIG. 3 is a perspective view showing a pre- filed ballometer and includes a driving substrate level 210, a support level 220, at least one pair of posts 270, and an absorption level 230.
구동기판 레벨(210)은 집적회로(도시되지 않음)가 형성되어 있는 기판(212)과 한쌍의 접속단자(214), 그리고 보호층(216)을 포함한다.The driving substrate level 210 includes a substrate 212 on which an integrated circuit (not shown) is formed, a pair of connection terminals 214, and a protective layer 216.
지지레벨(220)은 실리콘 질화막으로 만들어진 한쌍의 지지교각(240)을 포함하는데, 지지교각(240)의 상부에는 티타늄(Ti) 같은 금속으로 만들어진 전도선(265)이 형성되어 있다.The support level 220 includes a pair of support piers 240 made of silicon nitride, and a conductive line 265 made of a metal such as titanium (Ti) is formed on the support piers 240.
흡수레벨(230)은 잔류응력이 보상되고 절연성이 우수한 실리콘 질화막 또는 실리콘 산화막으로 만들어진 흡수대(295)와 상기 흡수대(295)에 의해 둘러쌓여진 연속적인 'ㄹ'자형으로 형성된 볼로메터 요소(285)를 포함한다. 상기 흡수대(295)의 상부에는 일반적인 적외선 흡수코팅(297)이 형성되어 있다.The absorption level 230 includes an absorption band 295 made of a silicon nitride film or a silicon oxide film having excellent residual stress and excellent insulation, and a bolometer element 285 formed in a continuous 'L' shape surrounded by the absorption band 295. Include. A general infrared absorption coating 297 is formed on the absorption band 295.
각각의 포스트(270)은 흡수레벨(230)과 지지레벨(220)의 사이에 위치한다.Each post 270 is located between absorption level 230 and support level 220.
한편, 상기 흡수대(295)가 실리콘 질화막으로 이루어진 경우, 850℃ 정도의 고온증착공정을 수반하게 되므로 그 과정에서 볼로메터 요소(285)의 Ti재질이 산소와 결합하여 TiO2산화물을 형성하게 된다. 주지하다시피 TiO2는 세라믹재질로서 온도가 상승됨에 따라 전기저항이 오히려 감소하는 특성을 가지므로 적외선 흡수 볼로메터에서 요구하는 TCR(Thermal Coefficient Resistance)에 역행하는 문제점이 발생되었다.On the other hand, when the absorption band 295 is made of a silicon nitride film, it involves a high temperature deposition process of about 850 ° C. In this process, the Ti material of the bolometer element 285 combines with oxygen to form TiO 2 oxide. As is well known, since TiO 2 is a ceramic material, the electrical resistance decreases with increasing temperature. Therefore, a problem arises that the TiO 2 is reversed to the TCR (Thermal Coefficient Resistance) required by the infrared absorption bolometer.
한편, 흡수대(295)를 실리콘 산화물(SiO2)로 증착한 경우에 열전도도(thermal conductivity)가 실리콘 질화물보다 작기 때문에 흡수대(295)로 사용하기가 유리하며, 또한 증착온도가 300℃∼400℃ 정도로 실리콘 질화물보다 훨씬 낮으므로 볼로메터 요소(285)인 티타늄의 손상방지 및 구동회로에 보호에 유리한 장점이 있다.On the other hand, when the absorption band 295 is deposited with silicon oxide (SiO 2 ), since the thermal conductivity is smaller than that of silicon nitride, it is advantageous to use the absorption band 295, and the deposition temperature is 300 ° C. to 400 ° C. It is much lower than silicon nitride to the extent that it is advantageous in preventing damage to the bolometer element 285 titanium and protecting the driving circuit.
그러나 이와 같이 실리콘 산화물(SiO2) 재질의 흡수대(295)는 증착시 큰 흡수대(295)에 압축응력이 발생되는 반면에 4∼5일 가량 시간이 경과됨에 따라 시효(aging)현상에 의해 인장응력이 발생되어 흡수대(295)가 휘어지는 단점이 있었다.However, as described above, the absorption band 295 made of silicon oxide (SiO 2 ) has a compressive stress in the large absorption band 295 during deposition, while the tensile stress is caused by aging as the time passes for about 4 to 5 days. This occurred, there was a disadvantage that the absorption band 295 is bent.
따라서, 적외선 흡수율이 현저히 떨어지거나 구조물이 구동기판 레벨에 접촉되어 센서로서의 역할을 하지 못하게 된다.As a result, the infrared absorption rate drops considerably or the structure comes into contact with the driving substrate level so that it does not serve as a sensor.
본 발명은 이와 같은 종래의 문제점을 해결하기 위한 것으로, 흡수대를 실리콘 산화 질화물(SiOxNy)재질로 형성하여 흡수대 형성과정에서 압축응력 발생을 억제하여 흡수대의 휨을 방지할 수 있는 적외선 흡수 볼로메터를 제공하는데 그 목적이 있다.The present invention is to solve such a conventional problem, the absorption band is formed of silicon oxynitride (SiO x N y ) material to suppress the generation of compressive stress in the absorption band forming process infrared absorption bolometer which can prevent the bending of the absorption band The purpose is to provide.
이와 같은 목적을 실현하기 위한 본 발명은 기판과 기판 위에 형성된 접속단자 및 기판을 덮는 보호층을 갖는 구동기판레벨과, 접속단자에 전기적으로 연결된 전도선을 포함하면서 캔틸레버 형상의 지지대가 적어도 한쌍 이상이 형성되는 지지레벨과, 지지레벨에 의해 지지되는 흡수대의 내부에 연속적인 'ㄹ'자형으로 형성된 볼로메터요소가 내장된 흡수레벨을 구비하는 적외선 흡수 볼로메터에 있어서, 상기 흡수대의 형성물질이 실리콘 산화 질화물(SiOxNy)로 이루어지는 것을 특징으로 하는 적외선 흡수 볼로메터를 제공한다.In order to achieve the above object, the present invention provides at least one pair of cantilever-shaped supports including a driving substrate level having a substrate, a connection terminal formed on the substrate and a protective layer covering the substrate, and a conductive line electrically connected to the connection terminal. An infrared absorption bolometer having a support level to be formed and an absorption level in which a bolometer element formed in a continuous 'd' shape is formed inside the absorption zone supported by the support level, wherein the material forming the absorption zone is formed of silicon oxide. It provides an infrared absorption bolometer, characterized in that made of nitride (SiO x N y ).
또한, 본 발명은 적외선 흡수 볼로메터 제조방법에 있어서, 기판과 한쌍의 접속단자를 구비하는 구동기판레벨을 형성하는 단계와; 상기 구동기판레벨 상부에 한쌍의 지지교각에 전도선이 형성되는 지지레벨을 형성하는 단계와; 상기 제 2 지지레벨 위에 구멍을 포함한 희생층을 형성하고 그 상부에 실리콘 산화 질화물(SiOxNy)재질의 제 1 열흡수층을 형성하여 패터닝하는 단계와; 상기 제 1 열흡수층의 상부에 연속적인 'ㄹ'자형으로 형성된 볼로메터 요소를 형성하는 단계와; 상기 볼로메터 요소를 포함하는 제 1 열흡수층 위에 동일한 재질(SiOxNy)의 제 2 열흡수층을 형성하여 흡수레벨을 형성하는 단계와; 상기 흡수레벨을 셀단위로 패터닝하는 단계를 포함하는 적외선 흡수 볼로메터 제조방법을 제공한다.In addition, the present invention provides a method for manufacturing an infrared absorption bolometer comprising the steps of: forming a driving substrate level having a substrate and a pair of connection terminals; Forming a support level at which a conductive line is formed at a pair of support piers on the driving substrate level; Forming a sacrificial layer including a hole on the second support level, and forming and patterning a first heat absorption layer of silicon oxynitride (SiO x N y ) material thereon; Forming a bolometer element formed in a continuous 'r' shape on top of said first heat absorption layer; Forming an absorption level by forming a second heat absorption layer of the same material (SiO x N y ) on the first heat absorption layer including the bolometer element; It provides an infrared absorption bolometer manufacturing method comprising the step of patterning the absorption level in units of cells.
본 발명의 상기 목적과 여러 가지 장점은 이 기술 분야에 숙련된 사람들에 의해 첨부된 도면을 참조하여 다음에 설명하는 발명의 바람직한 실시예로부터 더욱 명확하게 될 것이다.The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.
도 1은 종래의 볼로메터를 설명하는 단면도,1 is a cross-sectional view illustrating a conventional bolometer,
도 2는 도 1에 나타난 볼로메터를 보여주는 사시도,Figure 2 is a perspective view showing the ballometer shown in Figure 1,
도 3은 선출원된 적외선 흡수 볼로메터를 나타내는 사시도,3 is a perspective view showing a pre- filed infrared absorption bolometer,
도 4는 본 발명에 따른 적외선 흡수 볼로메터의 단면도,4 is a cross-sectional view of the infrared absorption bolometer according to the present invention;
도5a 내지 5k는 본 발명에 따른 적외선 흡수 볼로메터의 공정 단면도.5a to 5k are cross sectional views of the infrared absorption bolometer according to the present invention;
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
210 : 구동기판레벨 220 : 지지레벨 230 : 흡수레벨210: driving substrate level 220: support level 230: absorption level
212 : 기판 216 : 보호층 214 : 접속단자212 substrate 216 protective layer 214 connection terminal
240 : 지지교각 252 : 비아홀 265 : 전도선240: support pier 252: via hole 265: conduction line
270 : 포스트 285 : 볼로메터 요소270: post 285: the bolometer element
292 :제 1 흡수층 294 : 제 2 흡수층 295 : 흡수대292: first absorbing layer 294: second absorbing layer 295: absorbing band
이하, 첨부된 도면을 참조하여 본 발명에 따른 적외선 흡수 볼로메터 및 그 제조방법을 상세하게 설명한다.Hereinafter, an infrared absorption bolometer and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.
도 4는 본 발명에 따른 적외선 흡수 볼로메터를 도시한 단면도이다. 종래와 동일한 구성부재에 대해서는 동일부호를 부여하여 설명한다.4 is a cross-sectional view showing an infrared absorption bolometer according to the present invention. The same constituent members as before will be described with the same reference numerals.
도시된 바와 같이, 적외선 흡수 볼로메터(201)의 구성은 구동기판레벨(210), 지지레벨(220), 적어도 한쌍 이상의 포스트(270), 흡수레벨(230)으로 구성된다.As shown, the infrared absorption bolometer 201 is composed of a driving substrate level 210, a support level 220, at least one pair of posts 270, and an absorption level 230.
상기 구동기판레벨(210)은 집적회로(도시되지 않음)가 형성되어 있는 기판(212)과 한쌍의 접속단자(214), 그리고 보호층(216)을 포함한다. 금속으로 만들어진 상기 각각의 접속단자(214)는 기판(212)의 상부에 형성되어 있고 기판(212)의 집적회로에 전기적으로 접속되어 적외선 방사에너지 흡수작용에 의한 볼로메터(201)의 저항변화를 집적회로에 전달한다. 상기 보호층(216)은 잔류응력이 보상되고 절연성이 우수한 재료 즉, 실리콘 질화막으로 만들어져 있으면서 기판(212)을 덮고 있도록 형성되어 공정중에 기판에 손상(212)이 가지않도록 한다.The driving substrate level 210 includes a substrate 212 on which an integrated circuit (not shown) is formed, a pair of connection terminals 214, and a protective layer 216. Each of the connection terminals 214 made of metal is formed on the substrate 212 and electrically connected to the integrated circuit of the substrate 212 to change the resistance of the bolometer 201 due to the absorption of infrared radiation energy. Deliver to integrated circuits. The protective layer 216 is formed to cover the substrate 212 while being made of a material having excellent insulation and excellent insulation, that is, a silicon nitride film, to prevent damage 212 to the substrate during the process.
상기 지지레벨(220)은 실리콘 질화막으로 만들어진 한쌍의 지지교각(240)을 포함하는데, 상기 지지교각(240)의 상부에는 티탄늄(Ti) 같은 금속으로 만들어진 전도선(265)이 형성되어 있다. 상기 지지교각(240)의 앵커부분에는 비어홀(252)이 형성되어 있어서 전도선(265)의 한끝이 접속단자에 전기적으로 연결되어 있다.The support level 220 includes a pair of support bridges 240 made of silicon nitride, and a conductive line 265 made of metal such as titanium (Ti) is formed on the support bridges 240. A via hole 252 is formed in the anchor portion of the support pier 240 so that one end of the conductive line 265 is electrically connected to the connection terminal.
상기 흡수레벨(230)은 잔류응력이 보상되고 절연성이 우수한 재료 즉, 실리콘 산화 질화물(SiOxNy)로 이루어진 흡수대(295)와, 상기 흡수대(295)에 의해 둘러쌓여진 'ㄹ'자형의 볼로메터 요소(285)를 포함한다. 상기 흡수대(295)의 상부에는 일반적인 적외선 흡수코팅(297)이 형성된다.The absorption level 230 is an absorption band 295 made of a material having excellent residual stress and excellent insulation, that is, silicon oxynitride (SiO x N y ), and a '-' shaped ball surrounded by the absorption band 295. Meter element 285. A general infrared absorption coating 297 is formed on the absorption band 295.
상기 실리콘 산화 질화물(SiOxNy)로 이루어진 흡수대(295)는 산소원자의 일부가 원자반경이 적은 질소원자로 치환되어 실리콘 산화물(SiO2)로 이루어진 흡수대(295)보다 압축응력의 발생이 줄어든다.In the absorption band 295 made of silicon oxynitride (SiO x N y ), part of the oxygen atom is replaced with a nitrogen atom having a small atomic radius, thereby reducing the generation of compressive stress than the absorption band 295 made of silicon oxide (SiO 2 ).
따라서, 흡수대(295)의 평탄화를 실현할 수 있어 적외선 흡수 효율을 증대시킬 수 있다.Therefore, the absorption band 295 can be flattened and the infrared absorption efficiency can be increased.
한편, 도5a 내지 5k는 본 발명에 따른 적외선 흡수 볼로메터의 제조공정 단면도이다.On the other hand, Figure 5a to 5k is a cross-sectional view of the manufacturing process of the infrared absorption bolometer according to the present invention.
선행출원된 명세서에 기재된 바와 같이, 먼저 적외선 흡수 볼로메터를 제조하기 위해 기판 상에 구동기판레벨(210)과 지지레벨(220)을 형성한다.As described in the previously filed specification, first, the driving substrate level 210 and the support level 220 are formed on the substrate for manufacturing the infrared absorption bolometer.
도시된 바와 같이, 적외선 흡수 볼로메터(201)의 제조공정은 집적회로(도시되지 않음)와 한쌍의 접속단자(214)를 포함한 기판(212)의 준비로서 시작된다. 상기 각각의 접속단자(214)는 상기 기판(212)의 상부에 위치하면서 상기 집적회로에 전기적으로 접속되어 있다.As shown, the fabrication process of the infrared absorption bolometer 201 begins with the preparation of a substrate 212 including an integrated circuit (not shown) and a pair of connection terminals 214. Each connection terminal 214 is positioned above the substrate 212 and electrically connected to the integrated circuit.
상기 보호층(216)은 실리콘 질화막(SiNx) 같은 잔류응력이 보상된 절연성이 우수한 재료로 만들어지며, PECVD 방법을 사용하여 증착할 수 있다. 그리하여 도 5a에 도시된 바와 같이, 상기 기판(212)과 접속단자(214)를 완전하게 덮고 있는 구동기판레벨(210)이 형성된다.The protective layer 216 may be made of a material having excellent insulating property, such as silicon nitride film (SiN x ), with a residual stress compensated for, and may be deposited using a PECVD method. Thus, as shown in FIG. 5A, the driving substrate level 210 is formed to completely cover the substrate 212 and the connection terminal 214.
다음으로, 도 5b에 도시된 바와 같이, 다결정 실리콘(poly-Si) 같은 재료로 구성되고, 평평한 상부표면을 가진 제 1 희생층(300)이 저압기상증착법(LPCVD)을 사용하여 증착된다. 그리고나서, 상기 제 1 희생층(300)이 부분적으로 제거됨으로서 한쌍의 빈구멍(305)이 형성된다.Next, as shown in FIG. 5B, a first sacrificial layer 300 composed of a material such as poly-crystalline silicon and having a flat upper surface is deposited using low pressure vapor deposition (LPCVD). Then, the first sacrificial layer 300 is partially removed to form a pair of empty holes 305.
그 다음으로, 도 5c에 도시된 바와 같이, 실리콘 질화물(SiNx) 같은 재료로 만들어진 지지층(250)이 상기 빈구멍(305)을 포함한 상기 제 1 희생층의 상부에 PECVD 법을 사용하여 증착되며, 상기 접속단자(214)가 노출되도록 상기 지지층(250)에 한쌍의 비아홀(via hole:252)이 형성된다.Next, as shown in FIG. 5C, a support layer 250 made of a material such as silicon nitride (SiN x ) is deposited using a PECVD method on top of the first sacrificial layer including the voids 305. In addition, a pair of via holes 252 are formed in the support layer 250 to expose the connection terminal 214.
그런 후에, 도 5d에 도시된 바와 같이, 티탄늄 같은 금속으로 만들어진 전도성층(260)이 상기 비어홀(252)를 포함한 상기 지지층(250)의 상부에 스퍼터링법을 사용하여 증착되는데, 여기에서 상기 비어홀(252) 내부에 금속으로 만들어진 전도성층(260)이 채워지면서 상기 전도성층(260)이 상기 접속단자(214)와 전기적으로 연결된다.Thereafter, as shown in FIG. 5D, a conductive layer 260 made of a metal such as titanium is deposited using a sputtering method on top of the support layer 250 including the via hole 252, where the via hole is formed. The conductive layer 260 is electrically connected to the connection terminal 214 while the conductive layer 260 made of metal is filled in the inside of the 252.
다음으로, 도 5e에 도시된 바와 같이, 상기 전도성층(260)과 상기 지지층(250)은 각각 금속식각방법과 실리콘 질화막 식각방법으로 패터닝되면서 상부에 전도선(265)이 형성되어 있는 한쌍의 지지교각(240)을 형성함으로서 지지레벨(220)이 형성된다.Next, as shown in FIG. 5E, the conductive layer 260 and the support layer 250 are patterned by a metal etching method and a silicon nitride film etching method, respectively, and a pair of supports having a conductive line 265 formed thereon. The support level 220 is formed by forming the bridge 240.
계속적으로, 다결정 실리콘으로 만들어진 제 2 희생층(310)이 상기 지지교각(240)과 제 1 희생층(300)의 상부에 평평한 상부표면이 형성되도록 저압기상증착(LPCVD)법을 사용하여 증착된다. 그런다음, 상기 제 2 희생층(310)을 식각법을 사용하여, 도 5f에 도시된 바와 같이, 한쌍의 구멍(315)이 형성되도록 패터닝한다.Subsequently, a second sacrificial layer 310 made of polycrystalline silicon is deposited using low pressure vapor deposition (LPCVD) to form a flat top surface on top of the support bridge 240 and the first sacrificial layer 300. . The second sacrificial layer 310 is then patterned to form a pair of holes 315, as shown in FIG. 5F, using an etching method.
다음으로 도 5g에 도시된 바와 같이, 실리콘 산화 질화물(SiOxNy)로 만들어진 제 1 열흡수층(292)이 상기 구멍(315)을 포함한 제 2 희생층(310)의 상부에 PECVD법을 사용하여 증착된다. 그런 후에, 상기 지지교각(240)의 전도선(265)이 노출되도록 제 1 열흡수층(292) 안에 한쌍의 노출구멍(296)이 형성된다.Next, as shown in FIG. 5G, the first heat absorption layer 292 made of silicon oxynitride (SiO x N y ) uses PECVD on top of the second sacrificial layer 310 including the hole 315. Is deposited. Thereafter, a pair of exposed holes 296 are formed in the first heat absorption layer 292 to expose the conductive line 265 of the support bridge 240.
계속적으로, 도 5h에 도시된 바와 같이, 상기 노출구멍을 포함한 제 1 열흡수층(292)의 상부에 티탄늄(Ti)층이 스퍼터링법으로 증착되고 금속식각법으로 패터닝되어 볼로메터 요소(285)가 형성된다. 이때 상기 노출구멍(296)의 내부는 티탄늄으로 채워지면서 한쌍의 전관(272)를 형성한다.Subsequently, as shown in FIG. 5H, a layer of titanium (Ti) is deposited by sputtering and patterned by metal etching on top of the first heat absorbing layer 292 including the exposed hole, thereby forming the bolometer element 285. Is formed. At this time, the inside of the exposed hole 296 is filled with titanium to form a pair of electric tube 272.
다음으로, 도 5i에 도시된 바와 같이, 제 1 열흡수층(292)과 동일한 재료 즉, 실리콘 산화 질화물(SiOxNy)로 이루어진 제 2 열흡수층(294)이 상기 연속적인 'ㄹ'자형으로 형성된 볼로메터요소(285)의 상부에 증착되어 상기 볼로메터요소(285)를 둘러쌓고 있는 흡수대(295)이 형성된다.Next, as shown in FIG. 5I, a second heat absorbing layer 294 made of the same material as the first heat absorbing layer 292, that is, silicon oxynitride (SiO x N y ) is formed in the continuous 'L' shape. An absorption band 295 is formed on the formed ballot element 285 and surrounds the ballot element 285.
이와 같이 제조된 흡수대(295)는 앞서 언급한 바와 같이, 산소원자의 일부가 원자반경이 적은 질소원자로 치환되어 실리콘 산화물(SiO2)로 이루어진 흡수대(295)보다 압축응력의 발생이 줄어든다.As described above, the absorption band 295 manufactured as described above reduces a generation of compressive stress than the absorption band 295 made of silicon oxide (SiO 2 ) by replacing a portion of oxygen atoms with nitrogen atoms having a small atomic radius.
따라서, 흡수대(295)의 평탄화를 실현할 수 있어 적외선 흡수 효율을 증대시킬 수 있다.Therefore, the absorption band 295 can be flattened and the infrared absorption efficiency can be increased.
계속해서, 상기 흡수대(295)의 상부에는 일반적인 적외선 흡수코팅(296)이 형성된다.Subsequently, a general infrared absorption coating 296 is formed on the absorption band 295.
그런 후에, 도 5j에 도시된 바와 같이, 상기 흡수대(295)는 식각방법을 사용하여 셀단위로 나누어 흡수레벨(230)을 형성한다.Thereafter, as illustrated in FIG. 5J, the absorption band 295 is divided into cell units using an etching method to form an absorption level 230.
마지막으로, 도 5k에 도시된 바와 같이, 상기 제 2 희생층(310)과 제 1 희생층(300)을 식각하여 제거함으로서 적외선 흡수 볼로메터(201)의 제조공정을 완료한다.Finally, as shown in FIG. 5K, the second sacrificial layer 310 and the first sacrificial layer 300 are etched and removed to complete the manufacturing process of the infrared absorption bolometer 201.
따라서, 적외선 에너지가 흡수되었을 때, 연속적인 'ㄹ'자형으로 형성된 볼로메터 요소(285)의 저항값이 바뀌고, 바뀐 저항값에 의하여 전압, 또는 전류가 변화한다. 변화된 전류나 전압은 집적회로에 입력시켜 증폭되어 출력되고, 증폭된 전류나 전압은 검출회로(도시되지 않음)에 의해 읽혀져 적외선 센싱이 된다.Therefore, when the infrared energy is absorbed, the resistance value of the bolometer element 285 formed in a continuous 'd' shape changes, and the voltage or current changes according to the changed resistance value. The changed current or voltage is input to the integrated circuit, amplified and output, and the amplified current or voltage is read by a detection circuit (not shown) to be infrared sensing.
상술한 바와 같이 본 발명은 바람직한 예를 중심으로 설명 및 도시되었으나, 본 기술 분야의 숙련자라면 본 발명의 사상 및 범주를 벗어나지 않고 다양하게 변형 실시 할 수 있음을 알 수 있을 것이다.As described above, the present invention has been described and illustrated with reference to a preferred example, but it will be understood by those skilled in the art that various modifications may be made without departing from the spirit and scope of the present invention.
상술한 바와 같이 본 발명에 따르면, 흡수대를 산소원자의 일부가 원자반경이 적은 질소원자로 치환될 수 있는 실리콘 산화 질화물(SiOxNy)로 형성함으로써 흡수대 증착시 압축응력이 발생되는 억제할 수 있으며, 또한 시효(aging)현상에 따른 인장응력 발생에 의해 흡수대가 휘어지는 것을 방지할 수 있다.As described above, according to the present invention, the absorption band is formed of silicon oxynitride (SiO x N y ), in which a part of the oxygen atom can be replaced with a nitrogen atom having a small atomic radius, thereby suppressing compressive stress during deposition of the absorption band. In addition, it is possible to prevent the absorption band from bending due to the generation of tensile stress due to aging.
따라서, 흡수대의 평탄화를 실현하여 적외선 흡수효율을 향상시키는 효과를 얻을 수 있다.Therefore, the effect of improving the infrared absorption efficiency can be obtained by realizing the flattening of the absorption band.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980026420A KR20000007216A (en) | 1998-07-01 | 1998-07-01 | Bolometer for absorbing infra-red rays and method of fabricating the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980026420A KR20000007216A (en) | 1998-07-01 | 1998-07-01 | Bolometer for absorbing infra-red rays and method of fabricating the same |
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| KR20000007216A true KR20000007216A (en) | 2000-02-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100472539B1 (en) * | 2002-01-16 | 2005-03-08 | 주식회사 대우일렉트로닉스 | Infrared bolometer manufacture method |
| KR20210128552A (en) | 2020-04-16 | 2021-10-27 | 한국생산기술연구원 | Microbolometer sensor with dual resonant structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06160174A (en) * | 1991-09-27 | 1994-06-07 | Terumo Corp | Infrared sensor |
| JPH06317475A (en) * | 1991-07-19 | 1994-11-15 | Terumo Corp | Infrared sensor and fabrication thereof |
| US5629521A (en) * | 1995-12-11 | 1997-05-13 | Industrial Technology Research Institute | Interferometer-based bolometer |
| US6144030A (en) * | 1997-10-28 | 2000-11-07 | Raytheon Company | Advanced small pixel high fill factor uncooled focal plane array |
-
1998
- 1998-07-01 KR KR1019980026420A patent/KR20000007216A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06317475A (en) * | 1991-07-19 | 1994-11-15 | Terumo Corp | Infrared sensor and fabrication thereof |
| JPH06160174A (en) * | 1991-09-27 | 1994-06-07 | Terumo Corp | Infrared sensor |
| US5629521A (en) * | 1995-12-11 | 1997-05-13 | Industrial Technology Research Institute | Interferometer-based bolometer |
| US6144030A (en) * | 1997-10-28 | 2000-11-07 | Raytheon Company | Advanced small pixel high fill factor uncooled focal plane array |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100472539B1 (en) * | 2002-01-16 | 2005-03-08 | 주식회사 대우일렉트로닉스 | Infrared bolometer manufacture method |
| KR20210128552A (en) | 2020-04-16 | 2021-10-27 | 한국생산기술연구원 | Microbolometer sensor with dual resonant structure |
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