KR20000003405A - Image sensor containing color filter laminated as light interruption layer - Google Patents
Image sensor containing color filter laminated as light interruption layer Download PDFInfo
- Publication number
- KR20000003405A KR20000003405A KR1019980024647A KR19980024647A KR20000003405A KR 20000003405 A KR20000003405 A KR 20000003405A KR 1019980024647 A KR1019980024647 A KR 1019980024647A KR 19980024647 A KR19980024647 A KR 19980024647A KR 20000003405 A KR20000003405 A KR 20000003405A
- Authority
- KR
- South Korea
- Prior art keywords
- unit pixel
- image sensor
- pixel array
- metal wiring
- region
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000003086 colorant Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 19
- 239000011229 interlayer Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 12
- 238000003491 array Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 101000864342 Homo sapiens Tyrosine-protein kinase BTK Proteins 0.000 description 3
- 102100029823 Tyrosine-protein kinase BTK Human genes 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
본 발명은 이미지센서에 관한 것으로, 특히 광차단막으로서 적층된 칼라필터를 갖는 이미지센서에 관한 것이다.The present invention relates to an image sensor, and more particularly to an image sensor having a color filter laminated as a light shielding film.
통상적으로, CCD 또는 CMOS 이미지센서는 수광소자의 광감지영역를 포함하는 단위화소 어레이 영역과 상기 단위화소 어레이로부터 데이터를 출력하기 위한 주변회로 영역으로 이루어지며, 단위화소 어레이 영역 이외의 지역으로 입사되어 생기는 광전하의 발생을 막아 이미지센서의 화질 저하를 방지하기 위해서, 주변회로 영역은 광차단막으로 덮이게 된다.In general, a CCD or CMOS image sensor includes a unit pixel array region including a light sensing region of a light receiving element and a peripheral circuit region for outputting data from the unit pixel array, and is incident to an area other than the unit pixel array region. In order to prevent generation of photocharges and to prevent deterioration of the image quality of the image sensor, the peripheral circuit area is covered with a light blocking film.
도1에는 광차단막으로서 금속층을 사용하는 종래기술에 따른 이미지센서의 구조가 도시되어 있다. 도1을 참조하면, 소자분리를 위한 필드산화막(FOX)이 형성된 기판(substrate) 상에서 단위화소어레이영역에는 단위화소(Unit pixel)들이 형성되어 있고, 주변회로영역에는 회로를 구성하는 트랜지스터들이 형성되어 있다. 그리고, 이 상부에 층간절연막(PMD), 제1금속배선(M1), 제1금속층간절연막(IMD1) 및 제2금속배선(M2)이 차례로 적층 형성되어 있다. 제2금속배선(M2) 상부에는 광차단막으로서 금속층을 형성하기 위하여 제2금속층간절연막(IMD2)이 형성되어 있고 그 상부에 광차단막으로서 금속층(M3)이 형성된다. 금속층(M3)은 소자의 어떠한 배선을 구성하는 것이 아니고 광차단을 위한 것이다. 폴리사이드 게이트전극, 제1금속배선(M1), 제2금속배선(M2)등은 단위화소 내의 광감지영역(포토다이오드가 형성되는 영역) 위에는 위치하지 않고 그 이외의 지역에만 위치하게 된다.1 shows a structure of an image sensor according to the prior art using a metal layer as a light blocking film. Referring to FIG. 1, unit pixels are formed in a unit pixel array region on a substrate on which a field oxide film FOX is formed for device isolation, and transistors constituting a circuit are formed in a peripheral circuit region. have. Then, an interlayer insulating film PMD, a first metal wiring M1, a first metal interlayer insulating film IMD1, and a second metal wiring M2 are sequentially stacked on the upper portion. A second interlayer insulating film IMD2 is formed on the second metal wiring M2 to form a metal layer as a light blocking film, and a metal layer M3 is formed on the second metal wiring M2 as a light blocking film. The metal layer M3 does not constitute any wiring of the device, but is for light blocking. The polyside gate electrode, the first metal wiring M1, the second metal wiring M2, and the like are not positioned above the light sensing region (region where the photodiode is formed) in the unit pixel, but only in other regions.
한편, 도1에 도시된 종래의 이미지센서는 단위화소어레이영역에는 제2금속층간절연막(IMD2) 상에 바로 보호층(passivation)만이 형성되어 있고, 주변회로영역에는 제2금속층간절연막(IMD2) 상에 광차단막으로서의 금속층(M3)이 형성되고 그 위로 보호층(passivation)이 형성되어 있음을 알 수 있다. 그리고, 보호층상에는 단위화소어레이영역에 칼라필터가 어레이되어 있다.Meanwhile, in the conventional image sensor shown in FIG. 1, only a passivation layer is directly formed on the second interlayer insulating layer IMD2 in the unit pixel array region, and a second interlayer insulating layer IMD2 is formed in the peripheral circuit region. It can be seen that the metal layer M3 as a light blocking film is formed on the passivation layer, and a passivation layer is formed thereon. On the protective layer, color filters are arranged in the unit pixel array region.
이상에서 살펴본 바와 같이, 종래에는 회로설계에 사용되지 않는 별도의 금속층을 사용하여 광차단막을 형성하고 있는데, 금속층을 형성하기 위해서는 제2금속배선(M2)상에 제2금속층간절연막(IMD2)을 별도로 형성하여야 하기 때문에 원치 않는 금속층간절연막 캐패시턴스가 발생하게 되어 제품의 동작속도 저하를 가져오며 단위화소 위의 절연막 두께 증가로 입사되는 광의 양이 감소하여 제품의 화질이 저하되게 된다. 또한, 공정 스텝수가 증가되어 제조 단가 증가 및 제품 수율 감소를 가져오게 된다.As described above, the light blocking film is formed using a separate metal layer that is not used in the conventional circuit design. In order to form the metal layer, the second interlayer insulating film IMD2 is formed on the second metal wiring M2. Since it has to be formed separately, the unwanted interlayer dielectric film capacitance is generated, which leads to a decrease in the operation speed of the product, and the amount of incident light decreases due to an increase in the thickness of the insulating film on the unit pixel, thereby degrading the quality of the product. In addition, the number of process steps is increased, leading to an increase in manufacturing cost and a decrease in product yield.
본 발명의 목적은 금속층간절연막 캐패시턴스에 의한 제품의 동작속도 저하를 방지하고, 단위화소 위에 적층된 절연막 두께를 감소시켜 입사되는 광의 양을 최대한 증가시켜 제품의 화질을 개선하기 위한 이미지센서를 제공하고자 하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an image sensor for preventing a decrease in operating speed of a product due to metal interlayer dielectric capacitance and reducing the thickness of an insulating layer stacked on a unit pixel to increase the amount of incident light to maximize the quality of the product. It is.
도1은 종래기술에 따른 이미지센서 구조를 나타내는 단면도.1 is a cross-sectional view showing the structure of an image sensor according to the prior art.
도2는 2가지 이상의 칼라필터를 적층하였을 경우의 파장별 광 투과율을 나타내는 그래프.2 is a graph showing the light transmittance for each wavelength when two or more color filters are stacked.
도3은 본 발명의 일실시예에 따른 이미지센서 구조를 나타내는 단면도.Figure 3 is a cross-sectional view showing an image sensor structure according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
301 : 보호층 302a, 303a, 304a : 칼라필터301: protective layer 302a, 303a, 304a: color filter
305 : 광차단막305: light blocking film
상기 목적을 달성하기 위한 본 발명의 이미지센서는, 단위화소어레이영역을 갖는 이미지센서에 있어서, 금속배선이 완료된 기판 상에 형성된 보호층; 상기 보호층 상에서 상기 단위화소어레이 영역에 패턴된 세가지 칼라의 칼라필터어레이; 및 상기 보호층 상에서 상기 단위화소어레이영역 이외의 영역에 패턴되며, 상기 세가지 칼라중 적어도 두가지 칼라의 칼라필터가 적층되어 형성된 광차단층을 포함하여 이루어진다. 여기서 상기 광차단층은 레드, 그린 및 블루 칼라중 적어도 두 개의 칼라필터가 적층된 층이거나, 노랑(Yellow), 자홍색 (Magenta) 및 청록색(Cyan) 칼라중 적어도 두 개의 칼라필터가 적층된 층으로 구성 가능하다. 또한, 상기 금속배선은 금속층간절연막에 의해 절연된 더블 금속배선으로 실시 구성가능하다. 그리고, 단위화소어레이영역은 광감지영역을 포함하며 상기 광감지영역 상부에는 상기 금속배선이 덮이지 않는다.An image sensor of the present invention for achieving the above object, the image sensor having a unit pixel array region, the protective layer formed on the substrate is completed metal wiring; Three color color filter arrays patterned in the unit pixel array region on the protective layer; And a light blocking layer patterned on a region other than the unit pixel array region on the protective layer, and formed by laminating color filters of at least two colors among the three colors. The light blocking layer may include a layer in which at least two color filters of red, green, and blue colors are stacked, or a layer in which at least two color filters of yellow, magenta, and cyan colors are stacked. It is possible. In addition, the metal wiring may be implemented by a double metal wiring insulated by a metal interlayer insulating film. In addition, the unit pixel array region may include a light sensing region, and the metal wiring may not be covered on the light sensing region.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.
먼저, 도2에는 레드(Red), 그린(Green), 블루(Blue)의 3가지 칼라필터중 적어도 두가지 이상의 칼라필터를 적층하였을 경우, 400∼700nm 파장대의 가시광선 영역에서 이 적층된 칼라필터가 거의 완벽하게 광을 차단한다는 것을 알 수 있다. 특히 RBG가 적층된 칼라필터(RBG)에서는 가시광선 영역의 광이 거의 0(제로)%에 가까운 투과율(transmittance)을 갖는다는 것을 알 수 있다.First, in FIG. 2, when at least two color filters of three color filters of red, green, and blue are stacked, the stacked color filters are in the visible light region of 400 to 700 nm wavelength. It can be seen that the light is almost completely blocked. In particular, it can be seen that in the color filter (RBG) in which the RBG is stacked, the light in the visible light region has a transmittance of almost 0 (zero)%.
본 발명은 이와 같은 원리를 이용하여 적어도 두 개의 칼라필터가 적층된 칼라필터층으로 단위화소어레이영역 이외의 영역(주변회로영역)에 광차단막을 형성하는 것이다.The present invention is to form a light shielding film in a region (peripheral circuit region) other than the unit pixel array region as a color filter layer in which at least two color filters are stacked using this principle.
도3에는 본 발명의 일실시예에 따른 이미지센서의 단면도가 도시되어 있다. 도3을 참조하면, 소자분리를 위한 필드산화막(FOX)이 형성된 기판(substrate) 상에서 단위화소어레이영역에는 단위화소(Unit pixel)들이 형성되어 있고, 단위화소어레이영역 이외의 주변회로영역에는 주변회로를 구성하는 트랜지스터들이 형성되어 있다. 그리고, 층간절연막(PMD), 제1금속배선(M1), 제1금속층간절연막(IMD1) 및 제2금속배선(M2)이 차례로 적층 형성되어 있고, 제2금속배선(M2)이 완료된 상태의 기판 상에는 보호층(301)이 형성되어 있다. 보호층(301) 상에서 단위화소어레이영역에는 각 단위화소(unit pixel)에 대응되도록 레드(Red)(302a), 그린(Green)(303a) 및 블루(Blue)(304a)의 칼라필터가 어레이되어 있고, 역시 보호층(301) 상에서 단위하소어레이영역 이외의 영역(주변회로영역)에는 광차단막(305)으로서 레드(302b), 그린(303b) 및 블루(304b)의 3가지 칼라필터가 적층되어 있다. 또한 폴리사이드 게이트전극, 제1금속배선(M1), 제2금속배선(M2)등은 단위화소 내의 광감지영역(포토다이오드가 형성되는 영역) 위에는 위치하지 않고 그 이외의 지역에만 위치하게 된다.3 is a cross-sectional view of an image sensor according to an embodiment of the present invention. Referring to FIG. 3, unit pixels are formed in a unit pixel array region on a substrate on which a field oxide film FOX is formed for device isolation, and peripheral circuits are formed in a peripheral circuit region other than the unit pixel array region. Transistors constituting the transistor are formed. Then, the interlayer insulating film PMD, the first metal wiring M1, the first metal interlayer insulating film IMD1, and the second metal wiring M2 are stacked in this order, and the second metal wiring M2 is completed. The protective layer 301 is formed on the board | substrate. On the protective layer 301, color filters of red (302a), green (303a), and blue (304a) are arrayed in the unit pixel array region so as to correspond to each unit pixel. Also, three color filters of red 302b, green 303b, and blue 304b are stacked as the light blocking film 305 in a region (peripheral circuit region) other than the unit calcining array region on the protective layer 301. have. In addition, the polyside gate electrode, the first metal wiring M1, the second metal wiring M2, and the like are not positioned on the light sensing region (region where the photodiode is formed) in the unit pixel, but only in other regions.
도3에 도시된 본 발명의 특징적인 구성은 도1과 대비되는 바와 같이, 칼라필터가 적층된 광차단막(305)을 갖는다는 것이며, 이에 의해 도1의 제2금속층간절연막(IMD2)이 필요 없게 되었음을 주목하여야 한다.The characteristic configuration of the present invention shown in Fig. 3 is that, as compared with Fig. 1, it has a light blocking film 305 in which color filters are stacked, thereby requiring the second interlayer insulating film IMD2 of Fig. 1. It should be noted that there is no.
결국, 본 발명은 도1의 제2금속층간절연막(IMD2)이 필요 없게 되어 금속층간절연막 캐패시턴스에 의한 제품의 동작속도 저하를 방지할 수 있고, 단위화소(unit pixel) 위에 적층된 절연막 두께를 감소시켜 단위화소로 입사되는 광의 양을 최대한 증가시키므로써 이미지센서의 화질을 개선할 수 있다.As a result, the present invention eliminates the need for the second interlayer dielectric layer (IMD2) of FIG. 1, thereby preventing the operation speed of the product due to the interlayer dielectric layer capacitance, and reducing the thickness of the dielectric layer stacked on the unit pixel. In this case, the image quality of the image sensor may be improved by increasing the amount of light incident on the unit pixel as much as possible.
도3을 참조하여, 도3의 구조를 제조하기 위한 본 발명의 일실시예에 따른 이미지센서 제조방법을 살펴본다. 먼저 실리콘기판(substrate) 위에 NMOS 또는 PMOS 트랜지스터를 형성하기 위해 웰(P-well 또는 N-well)을 형성하고 소자간의 전기적인 절연을 위하여 필드산화막(FOX)을 형성한다. 이후 폴리사이드 게이트전극을 형성하고 단위화소(Unit Pixel) 지역과 주변회로지역에 활성영역들을 형성한다. 이후 폴리사이드 게이트전극과 제1금속배선(M1) 간의 전기적인 절연과 평탄화 특성 향상을 위하여 TEOS 및 BPSG이 적층된 층간절연막(PMD)을 형성한다. 이후 제1금속배선 콘택홀을 습식/건식 식각을 통해 형성하고 제1금속배선을 형성한다. 이후 제1금속배선(M1)과 제2금속배선 간의 전기적인 절연과 평탄화 특성 향상을 위해 제1금속층간절연막(IMD1)을 형성시킨다. 여기서 제1금속층간절연막은 단층 또는 다층의 절연막으로서 평탄화된 것이다. 이후 제2금속배선 콘택홀을 습식/건식 식각을 통해 형성하고 제2금속배선(M2)을 형성시킨다. 이때 폴리사이드 게이트전극, 제1금속배선(M1), 제2금속배선(M2) 등은 단위화소내의 광감지영역 위에는 위치하지 않고 그 이외의 지역에만 위치하게 된다. 그 이유는 수광소자의 광감지영역으로 입사되는 광의 흐름을 방해하지 않도록 하기 위함이다. 이후 수분이나 스크랫치로부터 소자를 보호하기 위하여 보호층(301)을 도포하고 패드 오픈 공정(도시하지 않음)을 진행한다. 이후 이미지센서의 칼라 이미지 구현을 위해 각각의 단위화소 위에 레드, 그린 및 블루의 칼라 필터를 각각 패터닝하게 되는데, 이때 이와 동시에 단위화소 이외의 지역에도 3가지 색깔의 칼라필터중 적어도 2가지 이상의 색깔을 적층하여 패터닝함으로써 칼라 필터 적층을 이용하여 광차단막(305)을 형성한다.Referring to Figure 3, looks at the image sensor manufacturing method according to an embodiment of the present invention for manufacturing the structure of FIG. First, a well (P-well or N-well) is formed to form an NMOS or PMOS transistor on a silicon substrate, and a field oxide film (FOX) is formed to electrically insulate between devices. After that, a polyside gate electrode is formed and active regions are formed in a unit pixel region and a peripheral circuit region. Afterwards, an interlayer insulating film PMD including TEOS and BPSG is formed to improve electrical insulation and planarization characteristics between the polyside gate electrode and the first metal wiring M1. Thereafter, the first metal wire contact hole is formed through wet / dry etching, and the first metal wire is formed. Subsequently, the first interlayer dielectric layer IMD1 is formed to improve electrical insulation and planarization characteristics between the first metal interconnection M1 and the second metal interconnection. The first interlayer insulating film is planarized as an insulating film of a single layer or multiple layers. Thereafter, the second metal wiring contact hole is formed through wet / dry etching, and the second metal wiring M2 is formed. In this case, the polyside gate electrode, the first metal wiring M1, the second metal wiring M2, and the like are not positioned above the light sensing region in the unit pixel, but only in other regions. The reason is to not disturb the flow of light incident to the light sensing region of the light receiving element. After that, in order to protect the device from moisture or scratches, a protective layer 301 is applied and a pad open process (not shown) is performed. Thereafter, red, green, and blue color filters are patterned on each unit pixel to realize a color image of the image sensor.At the same time, at least two or more colors of three color filters are applied to areas other than the unit pixel. By laminating and patterning, the light blocking film 305 is formed using color filter lamination.
한편, 칼라필터를 어레이하는 프로세스에는 염색된 포토레지스트(dyed photoresist)를 사용하는 프로세스, 젤라틴(Gelatin)을 사용하는 프로세스, 염색된 폴리이미드(dyed polyimide)를 사용하는 프로세스 및 리프트-오프(liff-off) 프로세스 등 여러 가지가 제안된 바 있는데, 본 발명은 공지된 프로세스를 사용하여 칼라필터를 어레이하면서 광차단막을 패터닝할 수 있다.On the other hand, the process of arraying color filters includes processes using dyed photoresist, processes using gelatin, processes using dyed polyimide, and lift-off. Off) process and the like have been proposed, the present invention can be used to pattern the light blocking film while the array of color filters using a known process.
본 실시예에서는 R, G, B의 3가지 칼라필터를 적층하여 광차단막을 구성하였으나, 상기 3가지 칼라필터중 적어도 2가지 이상이 적층된 칼라필터에 의해 광차단막을 구현할 수 있고, 본 실시예에서는 R, G, B 칼라필터에 대해서만 설명하였으나, 노랑(Yellow), 자홍색 (Magenta), 청록색(Cyan)의 3색을 사용하여 칼라 필터 어레이를 구현하는 경우에도 본 발명은 적용될 수 있다.In the present embodiment, a light blocking film is formed by stacking three color filters of R, G, and B. However, at least two or more of the three color filters may be stacked to implement the light blocking film. Although only the R, G, and B color filters have been described, the present invention can be applied to a color filter array using three colors of yellow, magenta, and cyan.
이렇듯, 본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.As such, although the technical idea of the present invention has been described in detail according to the above-described preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명은 금속층간절연막 캐패시턴스에 의한 제품의 동작속도 저하를 방지하고, 단위화소 위에 적층된 절연막 두께를 감소시켜 입사되는 광의 양을 최대한 증가시켜 이미지센서의 화질을 개선시키며, 제조공정이 간단하여(공정 스텝수 감소) 제조 단가 감소 및 제품 수율 증가를 가져오게 된다.The present invention is to prevent the operation speed of the product due to the interlayer dielectric film capacitance, to reduce the thickness of the insulating film laminated on the unit pixel to increase the amount of incident light as much as possible to improve the image quality of the image sensor, the manufacturing process is simple Reduced process steps) leads to reduced manufacturing costs and increased product yield.
Claims (5)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980024647A KR20000003405A (en) | 1998-06-29 | 1998-06-29 | Image sensor containing color filter laminated as light interruption layer |
| JP11182820A JP2000031441A (en) | 1998-06-29 | 1999-06-29 | Image sensor having color filter layered as light blocking layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980024647A KR20000003405A (en) | 1998-06-29 | 1998-06-29 | Image sensor containing color filter laminated as light interruption layer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2020010025311U Division KR20010002331U (en) | 2001-08-21 | 2001-08-21 | CMOS image sensor having stacked color filter as light shielding layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000003405A true KR20000003405A (en) | 2000-01-15 |
Family
ID=19541172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980024647A KR20000003405A (en) | 1998-06-29 | 1998-06-29 | Image sensor containing color filter laminated as light interruption layer |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2000031441A (en) |
| KR (1) | KR20000003405A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100690175B1 (en) * | 2005-10-14 | 2007-03-08 | 매그나칩 반도체 유한회사 | Cmos image sensor and method for fabricating the same |
| KR100736524B1 (en) * | 2001-12-14 | 2007-07-06 | 매그나칩 반도체 유한회사 | Image sensor |
| KR100748327B1 (en) * | 2001-11-22 | 2007-08-09 | 매그나칩 반도체 유한회사 | CMOS image sensor and method for fabricating thereof |
| KR100749271B1 (en) * | 2001-11-06 | 2007-08-13 | 매그나칩 반도체 유한회사 | Color filter array of image sensor to improve color quality and method of manufacturing the same |
| KR100789609B1 (en) * | 2006-08-21 | 2007-12-27 | 동부일렉트로닉스 주식회사 | Image sensor and method of manufacturing the same |
| KR100884485B1 (en) * | 2002-07-19 | 2009-02-17 | 매그나칩 반도체 유한회사 | CMOS image sensor with light shield layer and method for manufacturing the same |
| CN110034139B (en) * | 2018-01-12 | 2023-07-25 | 三星电子株式会社 | Image sensor |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3759435B2 (en) | 2001-07-11 | 2006-03-22 | ソニー株式会社 | XY address type solid-state imaging device |
| JP5116209B2 (en) * | 2004-11-26 | 2013-01-09 | キヤノン株式会社 | PHOTOELECTRIC CONVERSION DEVICE, MULTI-CHIP IMAGE SENSOR, TOUCH TYPE IMAGE SENSOR AND IMAGE READING DEVICE |
| US7964926B2 (en) | 2005-02-02 | 2011-06-21 | Samsung Electronics Co., Ltd. | Image sensing devices including image sensor chips, image sensor package modules employing the image sensing devices, electronic products employing the image sensor package modules, and methods of fabricating the same |
| KR100672995B1 (en) | 2005-02-02 | 2007-01-24 | 삼성전자주식회사 | Simplified method of forming image censor and image sensor so formed |
| KR100698100B1 (en) * | 2005-09-21 | 2007-03-23 | 동부일렉트로닉스 주식회사 | CMOS image sensor and method for manufacturing the same |
| JP4987748B2 (en) * | 2008-02-08 | 2012-07-25 | ソニー株式会社 | XY address type solid-state imaging device |
-
1998
- 1998-06-29 KR KR1019980024647A patent/KR20000003405A/en not_active Application Discontinuation
-
1999
- 1999-06-29 JP JP11182820A patent/JP2000031441A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100749271B1 (en) * | 2001-11-06 | 2007-08-13 | 매그나칩 반도체 유한회사 | Color filter array of image sensor to improve color quality and method of manufacturing the same |
| KR100748327B1 (en) * | 2001-11-22 | 2007-08-09 | 매그나칩 반도체 유한회사 | CMOS image sensor and method for fabricating thereof |
| KR100736524B1 (en) * | 2001-12-14 | 2007-07-06 | 매그나칩 반도체 유한회사 | Image sensor |
| KR100884485B1 (en) * | 2002-07-19 | 2009-02-17 | 매그나칩 반도체 유한회사 | CMOS image sensor with light shield layer and method for manufacturing the same |
| KR100690175B1 (en) * | 2005-10-14 | 2007-03-08 | 매그나칩 반도체 유한회사 | Cmos image sensor and method for fabricating the same |
| KR100789609B1 (en) * | 2006-08-21 | 2007-12-27 | 동부일렉트로닉스 주식회사 | Image sensor and method of manufacturing the same |
| CN110034139B (en) * | 2018-01-12 | 2023-07-25 | 三星电子株式会社 | Image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000031441A (en) | 2000-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100477789B1 (en) | Method for fabricating image sensor | |
| KR100672995B1 (en) | Simplified method of forming image censor and image sensor so formed | |
| US7196365B2 (en) | Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same | |
| KR100660714B1 (en) | Cmos image sensor with backside illumination and method for manufacturing the same | |
| US7244978B2 (en) | Solid state imaging device and method for manufacturing solid state imaging device | |
| KR20090080490A (en) | Solid-state imaging device, method of fabricating solid-state imaging device, and camera | |
| KR20000003405A (en) | Image sensor containing color filter laminated as light interruption layer | |
| KR20190030956A (en) | Image sensor having optical black pixel array and method for fabricating the same | |
| US7667749B2 (en) | Image sensor having a partial light-shielding layer and method for fabricating the same | |
| KR100853096B1 (en) | Image Sensor and Method for Menufacturing of the Same | |
| KR20050032438A (en) | Cmos image sensor and manufacturing method thereof | |
| KR20050103027A (en) | Image sensor having notch filter and method for fabrication of the same | |
| KR100498595B1 (en) | Image sensor with light blocking film close to active layer | |
| KR20010002331U (en) | CMOS image sensor having stacked color filter as light shielding layer | |
| KR20010061343A (en) | Method for fabricating image sensor | |
| KR100606919B1 (en) | The complementary metal oxide semiconductor image sensor and its manufacturing method for filling a color filter material | |
| KR100873289B1 (en) | CMOS image sensor with reduced effect of oblinque incident light | |
| KR100440774B1 (en) | Image sensor with Light shield layer | |
| KR100776145B1 (en) | Image sensor with multilayer color filter | |
| JP2001308299A (en) | Solid-state imaging element and its manufacturing method | |
| KR100884203B1 (en) | Image sensor with Light shield layer | |
| KR20030001075A (en) | Method for fabrication in CMOS Image Sensor | |
| KR20070021430A (en) | Image sensor with decreased signal noise and method for manufacturing the same | |
| KR100884485B1 (en) | CMOS image sensor with light shield layer and method for manufacturing the same | |
| KR20030042309A (en) | CMOS image sensor and method for fabricating thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application | ||
| WICV | Withdrawal of application forming a basis of a converted application |