KR20000000195A - Aerosol Flame Deposition Method for Over-cladding process of Planar Silica Optical Waveguide - Google Patents
Aerosol Flame Deposition Method for Over-cladding process of Planar Silica Optical Waveguide Download PDFInfo
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- KR20000000195A KR20000000195A KR1019990041865A KR19990041865A KR20000000195A KR 20000000195 A KR20000000195 A KR 20000000195A KR 1019990041865 A KR1019990041865 A KR 1019990041865A KR 19990041865 A KR19990041865 A KR 19990041865A KR 20000000195 A KR20000000195 A KR 20000000195A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000000151 deposition Methods 0.000 title claims abstract description 26
- 239000000443 aerosol Substances 0.000 title claims abstract description 18
- 230000003287 optical effect Effects 0.000 title claims description 35
- 238000005253 cladding Methods 0.000 title description 2
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 239000000075 oxide glass Substances 0.000 claims abstract description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000005191 phase separation Methods 0.000 abstract description 4
- 239000011148 porous material Substances 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000000280 densification Methods 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012792 core layer Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- 229910052767 actinium Inorganic materials 0.000 description 3
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- -1 lanthanum organic compound Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002604 lanthanum compounds Chemical class 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
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Abstract
Description
본 발명의 목적은 본 특허의 방법에 의하여The object of the present invention is to
(1) 실리콘이나 실리카 기판 위에 붕산(B2O3), 인산(P2O5), 산화게르마늄(GeO2) 등이 첨가된 규산(SiO2)계 유리의 (이하 Si-B-P-Ge계 유리) 평판 광회로 소자를 제작할 때에 생기는 여러 가지 결함들 [기공(pore), 계면접합불량(adhesion defect), 결정상(crystalline phase), 상분리(phase separation), 도파코어 용융(melt-back), 불균질 굴절률 분포 등]을 제거하여 고품위의 실리카 광회로 소자를 제작하고, 또한(1) Si-BP-Ge-based glass of silicic acid (SiO 2 ) glass containing boric acid (B 2 O 3 ), phosphoric acid (P 2 O 5 ), germanium oxide (GeO 2 ), or the like added on a silicon or silica substrate Glass) Various defects that occur in the fabrication of flat-panel optical circuit devices (pore, defect defect, crystalline phase, phase separation, waveguide melt-back, fire) Homogeneous refractive index distribution, etc.] to fabricate high quality silica optical circuit devices,
(2) Si-B-P-Ge계 유리를 평판 도파로 광증폭기의 모재로 사용할 때 광증폭 기능을 주는 희토류 산화물[Er2O3, Nd2O3, Yb2O3등]과 광증폭 효율을 높여주는 I, II족의 금속산화물[Na2O, K2O, CaO 등]을 손쉽게 넣기 위한 것이다.(2) Rare-earth oxides [Er 2 O 3 , Nd 2 O 3 , Yb 2 O 3, etc.] that provide optical amplification when Si-BP-Ge-based glass is used as the base material of a flat waveguide optical amplifier, enhance the optical amplification efficiency The state is intended to easily add metal oxides of group I and II [Na 2 O, K 2 O, CaO, etc.].
본 발명은 광통신, 광 신호처리, 또는 광센서 등에 사용되는 집적광학형의 평판형 실리카 광도파로 소자[광분배기, AWG (Arrayed Waveguide Grating) DWDM(Dense Wavelength Division Multiplexer) 소자, 광도파로 스위치, 광증폭기 등」의 제작공정 방법에 관한 것이다.DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an integrated optical flat silica optical waveguide device [optical splitter, arrayed waveguide grating (DWDM) dense wavelength division multiplexer (DWDM) device, optical waveguide switch, optical amplifier, etc. used in optical communication, optical signal processing, or optical sensor. It is related with the manufacturing process method of "etc.".
지금까지 사용된 실리카 광도파로소자의 제작법으로는 화염가수분해 증착법(FHD; Flame Hydrolysis Deposition), 화학기상증착법(CVD; Chemical Vapor Deposition). 전자빔 증착법(Electron Beam Deposition), 스퍼터증착법(Sputter Deposition), 이온교환법, 졸겔 스핀코팅법 등의 방법이 있다. 이들 방법들 중에서 FHD와 CVD 방법은 현재는 품질이 가장 좋고 경제적 생산방법으로 알려져 있고 따라서 이들 방법을 주로 사용하고 있다. 특히 FHD방법은 증착속도가 크고 고품위의 도파로를 만들 수 있으며 증착장치나 방법이 CVD에 비하여 간단하여 실리카 평판도파로 제작의 주요한 방법이 되고 있다.Silica optical waveguide devices used up to now include Flame Hydrolysis Deposition (FHD), Chemical Vapor Deposition (CVD). Electron beam deposition, sputter deposition, ion exchange, sol-gel spin coating, and the like are available. Among these methods, FHD and CVD methods are now known to be of the highest quality and economic production methods, and therefore these methods are mainly used. In particular, the FHD method has a high deposition rate and a high quality waveguide, and the deposition apparatus or method is simpler than CVD, making it a main method for fabricating a silica flat waveguide.
또한 기존의 FHD 방법에 의한 실리카 도파로를 이용하여 광증폭기 소자를 제작하고자 할 때는 실리카 유리에 광증폭 기능을 주는 란탄 또는 악티늄 계의 중원소의 산화물을 함유시키기 위하여 침탕법(실리카 미립자의 가소결 후에 란탄계 화합물의 용액에 침탕함), 이온주입법, 란탄계 유기화합물의 기화 증착법 등을 사용하고 있다.In addition, when fabricating an optical amplifier device using a silica waveguide according to the conventional FHD method, in order to contain a lanthanum or an actinium-based heavy element oxide which gives an optical amplification function in the silica glass, the immersion method (lanthanum after plasticization of silica fine particles) Soaking in a solution of the compound), ion implantation method, vapor deposition method of the lanthanum organic compound, etc. are used.
기존의 FHD방법은 토치(torch)의 화염 내부에 SiCl4, POCl3, GeCl4, BCl3등의 기화된 액체 재료를 주입하여 이들 재료의 가수분해반응으로 실리카 미립자를 화염 내부에 생성시켜 이들을 실리콘이나 실리카 등의 기판에 부착시키고 이들 실리카 미립자를 녹여서 투명한 도파로용의 유리박막으로 변환시키는 고밀화공정(Consolidation)을 사용하고 있다.Conventional FHD method injects vaporized liquid materials such as SiCl 4 , POCl 3 , GeCl 4 , and BCl 3 into the flame of the torch, and generates silica fine particles in the flame by hydrolysis of these materials to form silicon It adheres to substrates, such as silica and silica, and uses the consolidation process which melt | dissolves these silica fine particles, and converts it into the glass thin film for transparent waveguides.
이와같은 FHD방법에 의하여 실리카 광도파로를 제작할 때 생기는 문제점들은 (1) SiCl4, POCl3, GeCl4, BCl3등의 가수분해반응의 화학적 활성도가 기체의 종류마다 달라서 화염내부에서 미립자가 생겨서 점점 미립자가 성장하여 기판 쪽으로 이동되어서 부착되는 과정에서 기체마다 반응속도의 차이가 있고 따라서 미립자의 표면측과 내부측의 유리의 화학적 조성이 달라지게 되어 미립자의 증착시에 사용된 온도분포 및 유속분포 등의 화염의 상태에 따라서 고밀화공정시 유리 미립자의 고밀화조건이 크게 달라지게 되며, (2) 가수분해의 결과로 생기는 SiO2, P2O5, GeO2, B2O3등의 포화증기압이 화염 내부에서 서로 크게 차이가 있어 이들이 기체에서 고체화되는 화염내부의 부위 및 시점이 서로 다르고 따라서 기판에 증착된 이들 미립자 막의 미시적 조성이 불균일하여 미립자의 증착시에 사용된 온도분포 및 유속분포등의 화염의 상태에 따라서 고밀화공정시 유리 미립자의 고밀화조건이 크게 달라지게 된다. 이같은 공정방법의 문제들은 식각된 실리카 광도파로 코어 위에 상부 클래드 실리카 막을 입히는 공정에서 화염 내부에 주입된 원료의 성분비와는 다른 조성의 박막이 증착되거나, 박막의 조성이 증착되는 기판의 상태 또는 화염조건이나 토치에 따라서 그 조성이 식각된 도파로의 주위에서 또는 박막에 수직한 방향으로 달라져서 도파로의 도파특성을 조절하기가 매우 어렵게 되며, 실리카 미립자층 내부나 층간에 또는 실리카 미립자층 하부의 실리카 유리막이나 기판간 계면에 공정 잔여물이나 응력 등이 쉽게 존재하게 된다. 따라서 도파로 주위에 여러가지 결함들[기공, 계면접합불량, 결정상, 상분리, 도파코어 용융, 불균질 굴절률 분포 등]을 발생하게 한다.This caused a problem when producing a silica optical waveguide by the FHD method are (1) SiCl 4, POCl 3 , GeCl 4, BCl 3 , etc. A problem that the fine particles in the interior due to the difference flame for each type of the chemical activity of the base of the hydrolysis reaction more As the fine particles grow and move toward the substrate, there is a difference in reaction rate for each gas. Therefore, the chemical composition of the glass on the surface and inside of the fine particles is changed. Depending on the state of the flame, the densification condition of glass fine particles in the densification process is greatly changed. (2) Saturated vapor pressure such as SiO 2 , P 2 O 5 , GeO 2 , B 2 O 3 resulting from hydrolysis is increased There is a great difference in the interior so that the parts and viewpoints in the flame where they solidify in the gas are different and therefore the microscopic film of these particulate films deposited on the substrate Due to the nonuniformity of the composition, the densification conditions of the glass fine particles during the densification process vary greatly depending on the state of the flame such as the temperature distribution and the flow rate distribution used during the deposition of the fine particles. Problems of the process method include a thin film having a composition different from that of a raw material injected into the flame in the process of coating the upper clad silica film on the etched silica optical waveguide core, or the state or flame conditions of the substrate on which the composition of the thin film is deposited. Depending on the torch or its composition, the composition is changed around the etched waveguide or in a direction perpendicular to the thin film, making it very difficult to control the waveguide characteristics of the waveguide. Process residues and stresses are easily present at the interface. Therefore, various defects (porosity, poor interface bonding, crystalline phase, phase separation, waveguide core melting, heterogeneous refractive index distribution, etc.) are generated around the waveguide.
또한 기존의 FHD 방법의 실리카 도파로를 이용하여 광증폭기 소자를 제작하고자 할 때는 광증폭 기능을 주는 란탄 또는 악티늄 계의 중원소의 산화물을 실리카 유리에 함유시켜야 하며, 이들 란탄이나 악티늄 계 원소를 실리카계 유리에 미시적으로 상분리 없이 균일하게 분산시키기 위하여서는 란탄계 원소와 동시에 1,2족의 금속산화물을 증착시켜 함유하게 하여야 한다. 그러나 지금까지 이들 원소를 실리카 유리 내에 주입하는 방법으로는 침탕법(실리카 미립자의 가소결 후에 란탄계 화합물의 용액에 침탕함), 이온주입법, 란탄계 유기화합물의 기화 증착법 등이 사용되어 왔으나 이들 원소들은 기화시키기에 적당한 화합물이 없는 경우가 많고 또 있다 하여도 화학적으로 불안정하여 공정을 원하는 대로 제어하기가 어렵다.In addition, when fabricating an optical amplifier device using a conventional silica waveguide of the FHD method, an oxide of lanthanum or actinium-based heavy element having an optical amplification function must be included in the silica glass, and the lanthanum or actinium-based element is contained in the silica-based glass. In order to uniformly disperse the particles without phase separation, the metal oxides of Group 1 and 2 should be deposited simultaneously with the lanthanum element. However, as a method of injecting these elements into silica glass, agitation method (immersing in a solution of lanthanum compound after plasticization of silica fine particles), ion implantation method, and vaporization deposition method of lanthanum organic compound have been used. They often do not have a suitable compound to vaporize, and even if they are chemically unstable, it is difficult to control the process as desired.
도 1은 에어로졸 화염증착에 의한 실리카 광도파로 제작공정 흐롬도.1 is a silica optical waveguide fabrication process by aerosol flame deposition process Chromogram.
도 2는 실리카 광도파로 제작을 위한 에어로졸 화염증착장치의 구조 예시.Figure 2 illustrates the structure of an aerosol flame deposition apparatus for manufacturing a silica optical waveguide.
도 3은 실리카 광도파로 제작을 위한 에어로졸 반응 공정의 흐름도.3 is a flow chart of an aerosol reaction process for the fabrication of silica optical waveguides.
도 4는 에어로졸 화염증착법에 의한 평판형 실리카 광도파로의 코어 및 상부 클래드 구조 예시.Figure 4 illustrates the core and upper clad structure of the plate-shaped silica optical waveguide by aerosol flame deposition method.
본 발명은 기존의 이같은 단점을 극복하기 위한 Si-B-P-Ge 계 실리카 유리막의 에어로졸 화염 증착 공정의 발명이다. 에어로졸 반응은 졸 용액이 미리 각각의 구성성분들이 이미 반응하여 용액상에서 서로 구성비 대로 결합한 거대분자를 이루는 화학반응과정이다. 이같은 반응공정 후에 용액을 초음파에 의하여 화염 내부로 미립자 용액으로 분무하여 화염 안에서 건조되어 그 조성이 그대로 유지되면서 기판에 부착된다. 따라서 화염 상태 및 기판의 열적인 전도상태에 비교적 무관하게 미립자 조성이 생성되고 또한 증착되어 용액의 조성과 유리막의 조성이 거의 같게 유지가 된다.The present invention is an invention of the aerosol flame deposition process of the Si-B-P-Ge-based silica glass film to overcome such disadvantages. The aerosol reaction is a chemical reaction in which the sol solution is a macromolecule in which the respective components have already reacted and bound to each other in the solution phase. After such a reaction process, the solution is sprayed into the flame with a particulate solution by ultrasonic waves, dried in the flame, and adhered to the substrate while maintaining its composition. Therefore, the fine particle composition is generated and deposited relatively regardless of the flame state and the thermal conduction state of the substrate, so that the composition of the solution and the composition of the glass film are kept almost the same.
도 1은 본 발명이 적용되는 예시로서 에어로졸 화염 증착법에 의한 평면형 실리카 광도파로의 제작 공정을 나타낸 것이다. 도 1(A)는 실리카 광도파로의 하부 클래드 층(under-clad layer)과 코어 층(core layer)을 만들기 위하여 화염가수분해등착법 또는 에어로졸 화염 증착법으로 실리카 미립자(soot)를 증착하는 공정, 도 1(B)는 이를 투명한 실리카 하부 클래드 및 코어 유리막으로 변환시키는 고밀화 열처리 공정을 나타낸다. 코어층 실리카 미립자 증착에서는 게르마늄이나 인의 농도를 조절하여 그 굴절률이 하부 클래드나 상부 클래드 실리카 막 보다 크게하여 광이 코어층을 따라서 도파될 수 있게 해준다. 이어서 코어층 위에 건식마스크 (dry-etch mask)로 사용될 Cr 박막층을 증착하고 감광막(photo-resist)을 도포하여 광도파로의 2차원 평면 형상을 노광마스크(photo-mask)를 사용하여 감광막과 건식마스크 층에 사진현상법(photo-lithography)과 습식식각(wet-etch)법으로 이를 전사(transfer)한다. 다음에 도 1(C)와 같이 건식식각(dry-etch) 방법을 이용하여 코어 실리카층을 사각형 모양의 채널 광도파로로 식각한 후 도 1(D)에서와 같이 다시 상부 클래드 실리카 미립자층을 증착하고 이어서 도 1(E)와 같이 고밀화 열처리를 하여 실리카 광도파로를 완성한다.1 illustrates a manufacturing process of a planar silica optical waveguide by an aerosol flame deposition method as an example to which the present invention is applied. 1 (A) is a process of depositing silica particles by flame hydrolysis deposition or aerosol flame deposition to form an under-clad layer and a core layer of a silica optical waveguide, FIG. 1 (B) shows a high density heat treatment process that converts it to a transparent silica bottom clad and core glass film. In core layer silica particle deposition, the concentration of germanium or phosphorus is controlled so that its refractive index is larger than that of the lower cladding or upper clad silica film, allowing light to be guided along the core layer. Subsequently, a Cr thin film layer to be used as a dry-etch mask is deposited on the core layer, and a photo-resist is applied to form a two-dimensional planar shape of the optical waveguide using a photo-mask. The layers are transferred by photo-lithography and wet-etch. Next, the core silica layer is etched with a rectangular channel optical waveguide using a dry-etch method as shown in FIG. 1 (C), and then the upper clad silica fine particle layer is deposited as shown in FIG. 1 (D). Subsequently, the densification heat treatment is performed as shown in FIG. 1 (E) to complete the silica optical waveguide.
본 발명은 식각된 도파로 위에 상부 클래드 증착할 때에 특히 결함이 거의 없는 박막을 제작할 수 있어 그 효과가 크며 또한 이 방법은 코어에 기화시키기 어려운 유리재료물질, 즉 나트륨산화물, 칼슘 산화물, 희토류산화물 등을 손쉽게 포함시킬수 있는 장점이 있다.The present invention can produce a thin film with little defects, especially when depositing the upper clad on the etched waveguide, the effect is large, and this method is a glass material, which is difficult to vaporize the core, namely sodium oxide, calcium oxide, rare earth oxide, etc. There is an advantage that can be included easily.
도 2은 에어로졸 화염증착 방법에 의하여 실리카계 미립자를 증착하기 위한 구성 장치의 개략도이다. 여기서 증착과정은 상방향 화염 또는 하방향 화염이 사용될 수 있다. 장치의 구성은 에어로졸 생성부, 시료의 이동없이 급속 가열과 열처리를 동시에 수행할 수 있는 열처리 및 기판홀더 장치 등이다.2 is a schematic diagram of a constituent device for depositing silica-based fine particles by an aerosol flame deposition method. Here, the deposition process may be an upward flame or a downward flame. The configuration of the device is an aerosol generating unit, a heat treatment and substrate holder device that can perform rapid heating and heat treatment at the same time without moving the sample.
도 3은 본 발명에서 예시하는 Si-B-P-Ge계 산화물 유리의 졸겔 반응 공정 예시이다.3 is an example of a sol-gel reaction process for Si-B-P-Ge-based oxide glass exemplified in the present invention.
도 4는 본 발명이 효과적으로 적용될 수 있는 에어로졸 화염증착법에 의한 평판형 실리카 광도파로의 박막계 구조 예시이다.4 is an exemplary thin film type structure of a flat silica optical waveguide by an aerosol flame deposition method to which the present invention can be effectively applied.
에어로졸 화염 증착법으로 실리콘을 기판으로 하는 광도파 박막, 광도파로 및 광도파로 소자를 제작하는 공정에서 도파로 코어를 증착하거나 또는 상부 클래드 실리카 미립자 층의 증착 후 행하여 지는 고밀화 열처리공정 시에 본 발명의 간단한 장치를 이용하여 공정을 수행함으로서 결정상, 기공 및 계면 접합불량 등의 결함들을 제거할 수 있어 소자제작의 경제성을 높이고 또한 소자 성능을 향상시킬 수 있을 뿐만 아니라 생산 수율을 증가시킴으로서 경제성 있는 실리카 광도파로 소자를 제작하는 것이 가능하다. 또한 기존의 재료용액 기화방법으로는 실리카계 유리에 함유시키기가 어려운 어려운 1,2족의 금속산화물, 희토류 산화물 등을 손쉽게 함유시킬수 있다.The simple apparatus of the present invention during the high-density heat treatment process performed after deposition of a waveguide core or deposition of an upper clad silica fine particle layer in the process of fabricating an optical waveguide thin film, an optical waveguide, and an optical waveguide device using silicon as a substrate by the aerosol flame deposition method. By using the process, defects such as crystalline phases, pores and interfacial defects can be eliminated, thereby improving the economics of device fabrication and improving device performance as well as increasing the production yield. It is possible to produce. In addition, the conventional material solution vaporization method can easily contain a metal oxide of Group 1, 2, rare earth oxide, etc., which is difficult to contain in the silica glass.
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