KR19990080533A - Semiconductor Device Contact Hole Analysis Method - Google Patents

Abstract

The present invention relates to a semiconductor device contact hole analysis method.

A method for analyzing a line width or a profile of a contact hole pattern according to the present invention includes: an enlargement step of enlarging an analysis target region in which a contact hole is formed among patterns formed on a semiconductor substrate at a predetermined magnification; A setting step of setting an analysis point in multiple directions in an analysis target region in which the contact hole is formed; And an analysis step of analyzing contact holes based on the analysis points set in the multi-direction.

The analysis method of the resolution of the contact hole pattern of the present invention, the first analysis step of analyzing the length of the diagonal of the rectangular contact hole formed in the reticle; A second analysis step of analyzing a diagonal length of a rectangular contact hole among patterns formed on the semiconductor substrate; And a third analysis step of analyzing the resolution of the contact hole by comparing the length of the diagonal line of the first analysis step and the length of the diagonal line of the second analysis step.

Accordingly, by setting an analysis point in multiple directions when analyzing the contact hole, the reliability of data according to the analysis of the contact hole can be improved, and various data can be secured, thereby improving the reliability of the semiconductor device.

Description

Semiconductor Device Contact Hole Analysis Method

The present invention relates to a semiconductor device contact hole analysis method, and more particularly, to a semiconductor device contact hole analysis method that can set a multi-directional analysis point.

In general, a semiconductor device is manufactured by forming a predetermined film on a substrate that can be manufactured by the semiconductor device, that is, a semiconductor substrate, and forming the predetermined film in a pattern according to the characteristics of the semiconductor device.

Of the patterns formed on the semiconductor substrate, a region in which a metal material layer is filled to serve as electrical wiring of the semiconductor element, or a source region or a drain of a transistor constituting the semiconductor element. A contact hole is mainly formed in a region of the region where the lower electrode material layer of the capacitor and the like are connected.

In this case, the contact hole is formed on the semiconductor substrate in the form of an elliptical, circular or rectangular shape, which is almost circular.

In recent years, the contact hole is further miniaturized by miniaturization of the pattern due to the high integration of the semiconductor device.

Accordingly, in the semiconductor device manufacturing process, after forming the pattern, that is, the pattern including the contact hole, an analysis process of analyzing the pattern with various specifications is performed.

In the conventional analysis of the contact hole, the line width (CD) of the contact hole is mainly analyzed.

Here, referring to the conventional analysis process of the contact hole, first, the analysis of the line width of the contact hole expands the contact hole to be analyzed, that is, the analysis target region in which the contact hole pattern is formed, to a predetermined magnification.

After setting an analysis point in the analysis target region in which the contact hole pattern was formed, the line width of the contact hole pattern was analyzed, that is, at least two times based on the analysis point, and analyzed by the average value.

Herein, in the conventional case of setting the analysis point of the contact hole pattern, as shown in FIG. 1, when the contact hole pattern 10 is circular (including an ellipse close to a circular shape), the contact hole patterns 10 face each other. The operator arbitrarily set the direction.

That is, the analysis point 12 was set to manual so as to face the contact hole pattern 10 shown in FIG. 1 in the horizontal direction.

Accordingly, in the related art, there is a slight difference in the analysis value of the line width 14 of the contact hole pattern 10 according to the setting of the analysis point 12 for the operator to analyze the contact hole pattern 10.

In addition, in the semiconductor device manufacturing process, since the line width of the contact hole pattern is set at each step of the manufacturing process, an operator may psychologically affect the line width of the set contact hole pattern, that is, the set contact hole pattern. In the case where the line width according to the analysis is larger than the line width, the analysis point is set in a direction in which the diameter of the contact hole pattern decreases, and thus an error according to the analysis of the contact hole pattern occurs.

As shown in FIG. 2, the rectangular contact hole pattern 20 also sets the analysis point 22 in the horizontal direction based on the contact hole pattern 20 shown in FIG. 2 to form the contact hole pattern 20. The line width 24 of was analyzed.

In the analysis of the line width of the conventional contact hole pattern, an analysis point was set in only one direction to analyze the contact hole pattern.

In the related art, the analysis of the contact hole pattern is mainly limited to the analysis of the line width of the contact hole pattern.

Therefore, in the related art, by setting an analysis point only in one direction when analyzing a contact hole, there is a problem in that the reliability of data is reduced by lowering the reliability of data according to the analysis of the contact hole.

An object of the present invention is to provide a semiconductor device contact hole analysis method for improving the reliability of the semiconductor device by improving the reliability of the data according to the analysis of the contact hole by setting the analysis point in the multi-direction during the analysis of the contact hole.

Another object of the present invention is to provide a semiconductor device contact hole analysis method for securing various data according to analysis of a contact hole by analyzing not only the line width of the contact hole but also the profile and the resolution when the contact hole is analyzed.

1 and 2 illustrate a conventional method for analyzing a contact hole in a semiconductor device.

3 is a view for explaining a first embodiment of a semiconductor device contact hole analysis method according to the present invention.

4 is a view for explaining a second embodiment of a semiconductor device contact hole analysis method according to the present invention.

5 is a view for explaining a third embodiment of the method for analyzing a semiconductor device contact hole according to the present invention.

6A to 6C are diagrams for describing a fourth embodiment of a method for analyzing a semiconductor device contact hole according to the present invention.

※ Explanation of symbols for main parts of drawing

3, 4, 5, 7, 8: semiconductor substrate 6: reticle

10, 20, 30, 40, 50, 60, 70, 80: contact hole pattern

12, 22, 32, 42, 52: Analysis points 14, 24, 34, 44: Line width

54: profile

A semiconductor device contact hole analysis method according to the present invention for achieving the above object comprises: an enlargement step of enlarging an analysis target region in which a contact hole is formed in a pattern formed on a semiconductor substrate at a predetermined magnification; A setting step of setting an analysis point in multiple directions in an analysis target region in which the contact hole is formed; And an analysis step of analyzing contact holes based on the analysis points set in the multi-direction.

Preferably, the analyzing step is performed at least two times to analyze the average value.

In the setting step, the analysis point is set in a direction that may include the radial direction of the contact hole formed in a circular shape, and in the analysis step, the line width of the contact hole is analyzed based on the analysis point, or, in the setting step, a rectangular shape is formed. It is preferable to set an analysis point in a direction that may include a horizontal direction and a vertical direction of the contact hole, and in the analysis step, the line width of the contact hole may be analyzed based on the analysis point.

In the setting step, it is preferable to set the analysis point in a direction that may include the width direction of the pattern forming the contact hole, and in the analysis step, it is preferable to analyze the profile of the pattern of the contact hole based on the analysis point.

The enlargement step, the setting step and the analysis step are preferably performed using a scanning electron microscope.

Another semiconductor device contact hole analysis method of the present invention comprises: a first analysis step of analyzing a diagonal length of a rectangular contact hole formed in a reticle capable of forming a pattern including a contact hole on a semiconductor substrate; A second analysis step of analyzing a diagonal length of a rectangular contact hole among patterns formed on the semiconductor substrate using the reticle; And a third analysis step of analyzing the resolution of the contact hole by comparing the length of the diagonal line of the first analysis step and the length of the diagonal line of the second analysis step.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a view for explaining a first embodiment of a semiconductor device contact hole analysis method according to the present invention, Figure 4 is a view for explaining a second embodiment of a semiconductor device contact hole analysis method according to the present invention, 5 is a view for explaining a third embodiment of a semiconductor device contact hole analysis method according to the present invention, Figures 6a to 6c is a view for explaining a fourth embodiment of the semiconductor device contact hole analysis method according to the present invention Drawing.

Herein, the present invention analyzes a contact hole formed on a semiconductor substrate, that is, a contact hole pattern, and enlarges the analysis target region in which the contact hole pattern is formed on the semiconductor substrate at a predetermined magnification and the analysis target region. And a setting step of setting an analysis point in multiple directions and an analysis step of analyzing a contact hole pattern based on the analysis point set in the multi direction.

The present invention analyzes the line width of a circular contact hole pattern in a first embodiment, the line width analysis of a rectangular contact hole pattern in a second embodiment, and the contact hole. Analysis of the profile of the pattern is made as the third embodiment.

In addition, in the analysis of the resolution of the contact hole pattern of the present invention, first, a first analysis step of analyzing the diagonal length of the contact hole pattern formed in the reticle (which may include a mask) and the semiconductor using the reticle A second analysis step of analyzing the length of the diagonal of the contact hole pattern formed on the substrate and a third analysis step of analyzing the length of the diagonal of the first analysis step and the length of the diagonal of the second analysis step, The fourth embodiment is assumed.

First embodiment

First, FIG. 3 shows a state in which a circular contact hole pattern 30 is formed on the semiconductor substrate 3.

In order to analyze the line width 34 of the contact hole pattern 30 of the present invention, first, an analysis target region in which the contact hole pattern 30 is formed on the semiconductor substrate 3 is enlarged.

In the analysis target region in which the contact hole pattern 30 is formed, the analysis point 32 includes a horizontal direction, a vertical direction, and a diagonal direction based on the contact hole pattern 30 of FIG. 3. Set to.

Subsequently, the contact hole pattern 30 is analyzed based on the analysis point 32 set in the multi-direction, that is, the line width 34 of the contact hole pattern 30 is analyzed.

Herein, the magnification, setting, and analysis of the present invention may be performed using a scanning electron microscope.

In addition, the line width 34 of the contact hole pattern 30 performed in the multi-direction may be analyzed at least twice, and the average value thereof may be analyzed.

According to the present invention having the above configuration, the analysis point 32 is manually set by analyzing the line width 34 of the circular contact hole pattern 30 by setting the analysis point 32 in multiple directions instead of one direction. In addition, the reliability of the data may be improved by minimizing an error of data according to the analysis of the line width 32 of the contact hole pattern 30.

Second embodiment

First, FIG. 4 shows a state in which a rectangular contact hole pattern 40 is formed on the semiconductor substrate 4.

In order to analyze the line width 44 of the contact hole pattern 40 of the present invention, first, an analysis target region in which the contact hole pattern 40 is formed on the semiconductor substrate 4 is enlarged.

In addition, the analysis point 42 is set in a direction including a horizontal direction and a vertical direction, that is, multi-direction, based on the contact hole pattern 40 of FIG. 4 in the analysis target region in which the contact hole pattern 40 is formed. .

Subsequently, the contact hole pattern 40 is analyzed based on the analysis point 42 set in the multi-direction, that is, the line width 44 of the contact hole pattern 40 is analyzed.

Herein, the magnification, setting, and analysis of the present invention may be performed using a scanning electron microscope.

The line width 42 of the contact hole pattern 40 performed in the multi-direction may be performed at least two times to analyze the average value.

According to an exemplary embodiment of the present invention, the contact hole pattern 40 is analyzed by expanding the analysis point 42 in the rectangular contact hole pattern 40 not only in the horizontal direction but also in the vertical direction. Various data can be obtained according to the analysis of).

Third embodiment

First, FIG. 5 illustrates a state in which a rectangular contact hole pattern 50 is formed on the semiconductor substrate 5. The present invention enlarges the analysis target region of the contact hole pattern 50 at a predetermined magnification. .

As shown in FIG. 5, the analysis point 52 is set in the width in the inner space and the outer space of the contact hole pattern 50, that is, in the width direction of the contact hole pattern 50. The profile 54 of the contact hole pattern 50 is analyzed based on the set analysis point 52.

The present invention is to analyze the profile 54 of the contact hole pattern 50, that is, the thickness of the film forming the contact hole pattern 50, as shown in Figure 5, the scanning electron microscope ( The operator may arbitrarily set the direction of the scan.

In addition, the scanning electron microscope as described above can be easily handled by those skilled in the art.

In addition, the analysis of the profile 54 of the contact hole pattern 50 of the present invention includes not only the analysis of the profile 54 of the rectangular contact hole pattern 50 but also a circular contact hole (including an ellipse close to a circle). It is also applicable to the analysis of the profile of a pattern.

According to the present invention having the above-described configuration, the analysis of the line widths of the first and second embodiments is applied, and the analysis point 52 is set in the width direction of the contact hole pattern 50 and the profile 54 is defined. ).

Accordingly, the present invention analyzes the profile 54 of the contact hole pattern 50 as well as the analysis of the line widths 34 and 44 of the contact hole patterns 30 and 40 as in the first and second embodiments. Various data according to the analysis of the contact hole patterns 30, 40, and 50 may be secured.

Fourth embodiment

First, FIG. 6A illustrates a first analysis step of analyzing a diagonal length of a rectangular contact hole pattern 60 formed in a reticle 60 capable of forming a pattern including a contact hole on a semiconductor substrate. Drawing.

6B and 6C illustrate the contact hole patterns 70 and 80 formed on the semiconductor substrates 7 and 8 using the reticle, that is, the diagonal lengths of the rectangular contact hole patterns 70 and 80. A diagram showing a second analysis step.

Accordingly, the present invention performs a third analysis step of analyzing the resolution of the contact hole patterns (70, 80) by comparing the length of the diagonal of the first analysis step and the length of the diagonal of the second analysis step. can do.

That is, according to the present invention, the contact hole patterns 70 and 80 formed on the semiconductor substrates 7 and 8 using the diagonal length of the contact hole pattern 60 formed on the reticle 6 and the reticle 6 are formed. The resolution of the contact hole patterns 70 and 80 can be analyzed by comparing the lengths of the diagonal lines.

In other words, the resolution of the contact hole patterns 70 and 80 may be analyzed by analyzing the error of the diagonal length according to the rounding of the corners of the contact hole patterns 70 and 80.

For example, by comparing the length of the diagonal of FIG. 6B and the length of the diagonal of FIG. 6C with respect to the length of the diagonal of FIG. 6A, the resolution of the one whose error of the length is significantly smaller is good, and the contact hole pattern of FIG. A resolution of 70 indicates a good state, and a resolution of the contact hole pattern 80 in Fig. 6C indicates a bad state.

According to an exemplary embodiment of the present invention, the contact hole patterns 70 and 80 formed on the semiconductor substrates 7 and 8 using the diagonal length of the contact hole pattern 60 of the reticle 6 and the reticle 6 are formed. By comparing the diagonal lengths, the resolution of the contact hole patterns 70 and 80 may be analyzed.

That is, the present invention can obtain accurate data by setting the analysis points 32, 42, and 52 in multiple directions as in the first, second and third embodiments. Can be.

According to the present invention, various data can be obtained by expanding the analysis point to the contact hole pattern 60 formed in the reticle 6 as in the fourth embodiment.

The present invention having the above-described configuration can be applied in various ways when performing the analysis process according to the performance of the semiconductor device manufacturing process, and especially after the development process or the cleaning process during the photolithography process, and actively following the analysis process. It can be applied.

In addition, the present invention can minimize the error of the data according to the analysis by setting in the multi-direction despite the manual setting of the analysis point.

Therefore, according to the present invention, by setting an analysis point in multiple directions when analyzing a contact hole, the reliability of data according to the analysis of the contact hole can be improved, and various data can be secured, thereby improving the reliability of the semiconductor device. .

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (7)

An enlargement step of enlarging an analysis target region in which a contact hole is formed among patterns formed on the semiconductor substrate at a predetermined magnification; A setting step of setting an analysis point in multiple directions in an analysis target region in which the contact hole is formed; And An analysis step of analyzing contact holes based on the analysis points set in the multi directions; A semiconductor device contact hole analysis method comprising the. The method of claim 1, And analyzing the average value by performing the analysis step at least twice. The method of claim 1, In the setting step, the analysis point is set in a direction that may include a radial direction of the contact hole formed in a circular shape, and in the analysis step, the line width of the contact hole is analyzed based on the analysis point. Analytical Method. The method of claim 1, In the setting step, the analysis point is set in a direction that may include a horizontal direction and a vertical direction of the contact hole formed as a rectangle, and in the analysis step, the line width of the contact hole is analyzed based on the analysis point. Device contact hole analysis method. The method of claim 1, In the setting step, the analysis point is set in a direction that may include the width direction of the pattern forming the contact hole, and in the analysis step, a profile of the contact hole pattern is analyzed based on the analysis point. The semiconductor device contact hole analysis method. The method of claim 1, The enlargement step, the setting step and the analysis step of the semiconductor device contact hole analysis method characterized in that performed using a scanning electron microscope. A first analysis step of analyzing a diagonal length of a rectangular contact hole formed in a reticle capable of forming a pattern including a contact hole on a semiconductor substrate; A second analysis step of analyzing a diagonal length of a rectangular contact hole among patterns formed on the semiconductor substrate using the reticle; A third analysis step of analyzing the resolution of the contact hole by comparing the length of the diagonal line in the first analysis step with the length of the diagonal line in the second analysis step; A semiconductor device contact hole analysis method comprising the.