KR19990079279A - Liquid conveying system - Google Patents
Liquid conveying system Download PDFInfo
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- KR19990079279A KR19990079279A KR1019980011804A KR19980011804A KR19990079279A KR 19990079279 A KR19990079279 A KR 19990079279A KR 1019980011804 A KR1019980011804 A KR 1019980011804A KR 19980011804 A KR19980011804 A KR 19980011804A KR 19990079279 A KR19990079279 A KR 19990079279A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명에 따르면, 화학 기상 증착 장치에 소스 가스를 공급하기 위한 것으로서, 원료가 공급 라인에서 응축되는 것을 방지하는 액체 공급 시스템이 제공된다.According to the present invention, there is provided a liquid supply system for supplying a source gas to a chemical vapor deposition apparatus, which prevents raw material from condensing in a supply line.
반응기에 원료물질을 공급하기 위한 원료 공급 시스템은 원료공급탱크와 원료공급라인을 구비한다. 원료 공급라인은 상기 원료공급탱크로부터 상기 반응기쪽으로 연장되는 도관을 구비한다. 상기 도관 상에는 상기 원료공급탱크로부터 차례로 액체 유량제어기와 기화기가 설치되어 있으며, 상기 액체 유량제어기와 기화기의 상류 및 하류에는 밸브가 설치된다. 원료공급시스템은 공급라인에 잔류하는 원료물질을 배출하기 위한 배출라인과 배출라인에 공급되는 퍼지가스를 가열하기 위한 가열장치를 구비한다.The raw material supply system for supplying raw materials to the reactor includes a raw material supply tank and a raw material supply line. The feedstock line has conduits extending from the feedstock tank towards the reactor. On the conduit, a liquid flow controller and a vaporizer are sequentially installed from the raw material supply tank, and valves are installed upstream and downstream of the liquid flow controller and the vaporizer. The raw material supply system includes a discharge line for discharging the raw material remaining in the supply line and a heating device for heating the purge gas supplied to the discharge line.
Description
본 발명은 화학 기상 증착 장치에 사용하는 액체 운반 시스템(Liquid Delivery System; LDS)에 관한 것으로, 특히 운송되는 원료의 공급라인의 구조가 단순하고 공급라인 가열수단을 사용함으로써 형성되는 막질의 균일성과 재현성을 향상시켰으며 설치 면적이 작고 운영이 편리한 액체 운반 시스템에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid delivery system (LDS) for use in a chemical vapor deposition apparatus. In particular, the structure of a supply line of raw materials to be transported is simple and the uniformity and reproducibility of the film quality formed by using a supply line heating means The invention relates to a liquid delivery system with a small footprint and easy operation.
종래의 액체 운반 시스템에 따르면, 소스가스 공급 라인은 원료탱크에서 반응기까지의 공급라인의 길이가 길고 복잡하였다. 따라서, 공급라인 내에 잔류소스가 완전히 배기되지 못하고 응축되는 문제가 있다. 이렇게 응축되어 있던 것은 다음 공정 진행을 위해 공급된 소스와 함께 반응기내로 들어가게 되어 공정이 진행됨에 따라서 재현성을 떨어뜨린다. 종래의 액체 운반 시스템 중 일부에서는 잔류가스가 남아있지 못하게 소스를 공급할 때에도 가스 배출라인과 펌프를 계속 열어둔다. 이 경우 소스를 과다 소모하는 문제가 있다.According to the conventional liquid delivery system, the source gas supply line has a long and complicated supply line from the raw material tank to the reactor. Therefore, there is a problem that the residual source is not completely exhausted and condensed in the supply line. This condensation enters the reactor with the source supplied for the next process run, reducing the reproducibility as the process proceeds. Some of the conventional liquid delivery systems keep the gas discharge lines and pumps open even when the source is supplied so that no residual gas remains. In this case, there is a problem of consuming excessive source.
본 발명은 위와 같은 문제점을 개선하기 위한 것으로서, 본 발명의 목적은 화학 기상 증착 장치에 소스 가스를 공급하기 위한 것으로서, 원료가 공급 라인에서 응축되는 것을 방지하는 액체 공급 시스템을 제공하는 데에 있다.The present invention is to improve the above problems, an object of the present invention is to supply a source gas to the chemical vapor deposition apparatus, to provide a liquid supply system to prevent the raw material is condensed in the supply line.
본 발명의 또 다른 목적은 구조가 단순하여 유지비용을 감소시킬 수 있는 액체 공급 시스템을 제공하는 데에 있다.It is a further object of the present invention to provide a liquid supply system which is simple in structure and which can reduce maintenance costs.
도1은 본 발명에 따른 액체 운반 시스템의 구조도1 is a structural diagram of a liquid delivery system according to the present invention;
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
12: 액체원료 탱크 13: 공급 라인12: liquid raw material tank 13: supply line
16: 배출라인 18: 보충라인16: discharge line 18: replenishment line
22: 가열 장치22: heating device
본 발명은 이러한 목적을 달성하기 위하여, 반응기에 원료물질을 공급하기 위한 원료 공급 시스템에 있어서, 원료공급탱크와 원료공급라인을 구비하며, 상기 원료 공급라인은 상기 원료공급탱크로부터 상기 반응기쪽으로 연장되는 도관과, 상기 도관 상에는 상기 원료공급탱크로부터 차례로 액체 유량제어기와 기화기가 설치되어 있으며, 상기 액체 유량제어기와 기화기의 상류 및 하류에는 밸브가 설치되며, 상기 기화기 하류의 공급라인을 가열하기 위한 가열 장치를 구비하는 것을 특징으로 하는 원료물질 공급 시스템을 제공한다.In order to achieve the above object, the present invention provides a raw material supply system for supplying raw materials to a reactor, the raw material supply tank having a raw material supply line, wherein the raw material supply line extends from the raw material supply tank toward the reactor. A conduit and a liquid flow controller and a vaporizer are installed in order from the raw material supply tank on the conduit, and valves are installed upstream and downstream of the liquid flow controller and the vaporizer, and a heating device for heating a supply line downstream of the vaporizer. It provides a raw material supply system characterized in that it comprises a.
화학 기상 증착에 의해 형성된 막의 막질은 액체 운반 시스템의 구조와 성능에 크게 의존한다. 액체 운반 시스템의 소스 공급 구조를 복잡하게 하면, 사용 시간이 흐름에 따라서 원료가 공급 라인이나 장치에 응축되어 막의 균일성과 재현성이 저하될 수 있다. 본 발명은 원료 공급 구조를 단순화하여 길이를 줄이고, 가스 공급라인 가열수단을 이용하여 잔류가스가 응축되었다 다시 원하지 않는 기화원으로 작용하는 것을 방지한다. 또한, 잔류가스뿐 아니라, 기화기를 통과하기 전에 공급라인이나 액체유량 제어기 내에 남아 있는 잔류 액체를 퍼지 가스를 이용하여 완전히 배출하는 것이 가능하다. 따라서, 공정을 여러 번 진행하여도 공급라인을 통과하여 반응기내로 주입되는 원료의 양이 일정하여, 형성되는 막의 균일성과 재현성이 우수하다. 그 구조가 단순하므로 유지비용도 감소시킬 수 있다.The film quality of the film formed by chemical vapor deposition is highly dependent on the structure and performance of the liquid delivery system. Complicating the source supply structure of the liquid delivery system can result in condensation of the raw material into the supply line or device over time, leading to a decrease in the uniformity and reproducibility of the membrane. The present invention simplifies the raw material supply structure to reduce its length and prevents residual gas from condensing and acting as an unwanted vaporization source using gas supply line heating means. In addition to the residual gas, it is possible to completely discharge the residual liquid remaining in the supply line or the liquid flow controller using the purge gas before passing through the vaporizer. Therefore, even if the process is carried out several times, the amount of the raw material injected into the reactor through the supply line is constant, so that the uniformity and reproducibility of the formed film are excellent. The simple structure makes it possible to reduce maintenance costs.
도1을 참조하면, 본 발명의 액체 운반 시스템은 그 구성상 크게는 액체원료 탱크와 액체원료 탱크(source tank; 12)에서부터 반응기까지 소스가스를 공급하는 공급 라인(13), 그리고 배출라인(Evacuation line; 16), 액체 원료를 보충하기 위한 보충라인(18), 공급라인과 배출라인의 일부를 가열하기 위한 가열 장치(22)로 구성된다.Referring to FIG. 1, the liquid conveying system of the present invention includes a supply line 13 for supplying source gas from a liquid raw material tank and a liquid raw material tank 12 to a reactor, and an discharge line. line 16), a replenishment line 18 for replenishing the liquid raw material, and a heating device 22 for heating a portion of the supply line and the discharge line.
액체원료 탱크(12)는 반응기(도시되지 않음)로 보낼 액체 원료를 저장한다. 바람직하기로는 본 출원인이 출원한 한국 특허출원 제98-1345호에 기재된 바와 같이, 원료 탱크 자체의 체적을 축소시켜 원료 탱크의 내압 증가에 의해서 원료를 배출구로 밀어내는 방식의 액체 원료 탱크를 사용하는 것이 바람직하다. 상기 출원의 액체 원료 탱크에 해당하는 부분의 기재는 본 명세서의 일부로 한다. 그러나, 본 발명은 그러한 액체저장탱크에 제한되는 것은 아니며, 반응기에 보낼 액체를 저장하는 탱크라면, 어떠한 탱크도 사용할 수 있다.The liquid raw material tank 12 stores liquid raw material to be sent to a reactor (not shown). Preferably, as described in Korean Patent Application No. 98-1345 filed by the present applicant, a liquid raw material tank using a method of reducing the volume of the raw material tank itself to push the raw material to the outlet by increasing the internal pressure of the raw material tank is used. It is preferable. Description of the part corresponding to the liquid raw material tank of the said application is a part of this specification. However, the present invention is not limited to such a liquid storage tank, and any tank may be used as long as it stores a liquid to be sent to the reactor.
공급라인(13)은 원료 액체 탱크(12)로부터 반응기(도시하지 않음)까지 도관(23)이 연장됨으로써 이루어진다. 상기 공급라인(13)에는 액체탱크로부터 차례로 배치된 온-오프(on-off) 밸브인 제1밸브(25), 압력게이지(PG: Pressure gauge; 29), 제2밸브(32), 제1유량 제어기(LMFC; 34), 제3밸브(35), 기화기(Vaporizer; 39), 제4밸브(42)가 구비되어 있다. 액체 압력게이지(29)는 원료액체의 압력을 나타낸다. 제1유량 제어기(34)는 유동하는 액체의 양을 일정하게 제어한다. 기화기(39)는 원료 액체를 기화시켜 소스가스로 만든다.Feed line 13 is achieved by extending conduit 23 from source liquid tank 12 to a reactor (not shown). The supply line 13 has a first valve 25, a pressure gauge (PG) 29, a second valve 32, and a first valve, which are on-off valves sequentially disposed from a liquid tank. A flow controller (LMFC) 34, a third valve 35, a vaporizer 39, and a fourth valve 42 are provided. The liquid pressure gauge 29 represents the pressure of the raw material liquid. The first flow controller 34 constantly controls the amount of liquid flowing. The vaporizer 39 vaporizes the source liquid into a source gas.
배출라인(16)은 공급라인(13)에 있는 잔류 원료 액체나 소스 가스를 외부로 배출하기 위한 것이다. 배출라인(16) 기화기(39)와 제4밸브(42) 사이에서 분기하여 잔류가스 배출 펌프(도시하지 않음)로 연결된 제1배출라인(43)를 갖는다. 제1배출라인(43)에는 제5밸브(45)가 설치된다. 제2배출라인(47)은 퍼지가스 공급장치(도시하지 않음)로부터 기화기(39)까지 연장된다. 제2배출라인(47)에는 제6밸브(49)가 설치된다.The discharge line 16 is for discharging the residual raw material liquid or the source gas in the supply line 13 to the outside. Discharge line 16 has a first discharge line 43 branching between vaporizer 39 and fourth valve 42 and connected to a residual gas discharge pump (not shown). The fifth valve 45 is installed in the first discharge line 43. The second discharge line 47 extends from the purge gas supply device (not shown) to the vaporizer 39. The sixth valve 49 is installed in the second discharge line 47.
제3배출라인(50)은 공급라인(13)의 제1유량제어기(34)와 제3밸브(35) 사이에서 분기하여 잔류액체 배출 펌프(도시하지 않음)로 연장된다. 제3배출라인(50)에는 제7밸브(52)가 설치된다. 제4배출라인(53)은 퍼지가스 공급장치(도시하지 않음)로부터 공급라인(13)의 제2밸브(32)와 제1유량제어기(34) 사이의 도관까지 연장된다. 제4배출라인(53)에는 제8밸브(55)가 설치된다. 배출라인에는 퍼지가스 공급장치로부터 나오는 퍼지가스의 유량을 제어하기 위한 제2유량제어기(59)가 설치된다.The third discharge line 50 branches between the first flow controller 34 and the third valve 35 of the supply line 13 and extends to a residual liquid discharge pump (not shown). The seventh valve 52 is installed in the third discharge line 50. The fourth discharge line 53 extends from a purge gas supply device (not shown) to a conduit between the second valve 32 and the first flow controller 34 of the supply line 13. An eighth valve 55 is installed in the fourth discharge line 53. In the discharge line, a second flow controller 59 for controlling the flow rate of the purge gas from the purge gas supply device is installed.
원료액체 보충라인(18)은 원료액체의 공급조(도시하지 않음)에서 연장되는 제1보충라인(61)을 갖는다. 제1보충라인(61)은 제9밸브(64)를 거쳐 공급라인(13)의 원료 탱크(12)와 제1밸브(25) 사이에 연결된다. 제1보충라인(61)에서 분기된 제2보충라인(63)은 제10밸브(65)를 거쳐 공급라인(13)의 제1밸브(25)와 압력 게이지(29) 사이에 연결된다. 제9밸브(64)는 필요한 경우 액체소스를 자동리필(refill)할 때 사용한다. 제10밸브(65)는 자동리필 후에 잔류소스를 배출할 때 사용한다.The raw material liquid replenishment line 18 has a first replenishment line 61 extending from a supply tank (not shown) of the raw material liquid. The first supplementary line 61 is connected between the raw material tank 12 and the first valve 25 of the supply line 13 via the ninth valve 64. The second supplementary line 63 branched from the first supplementary line 61 is connected between the first valve 25 of the supply line 13 and the pressure gauge 29 via the tenth valve 65. The ninth valve 64 is used to automatically refill the liquid source if necessary. The tenth valve 65 is used to discharge the residual source after automatic refilling.
가열 장치(22)는 가열테이프 또는 가열재킷으로 이루어진다. 가열장치(22)는 공급라인(13) 중 기화기에서 반응기까지의 기화한 소스가 유동하는 라인에 설치된다. 또한, 가열장치(22)는 배출라인(16) 중 제1배출라인(43)과 제2배출라인(47)에 설치된다. 기화된 소스가스가 가열장치로 가열된 라인을 통하여 공급되므로, 공급라인(13) 내에서 소스가스가 응축될 우려가 없다. 또한, 퍼지가스가 제2배출라인(47)을 통하여 공급되는 동안, 가열장치(22)에 의해 가열되므로, 차가운 퍼지가스를 그대로 공급했을 때 발생할 수 있는 기화기 내의 원료의 응축 등을 방지할 수 있다.The heating device 22 consists of a heating tape or heating jacket. The heating device 22 is installed in a line through which the vaporized source from the vaporizer to the reactor flows in the supply line 13. In addition, the heating device 22 is installed in the first discharge line 43 and the second discharge line 47 of the discharge line (16). Since the vaporized source gas is supplied through the line heated by the heater, there is no fear that the source gas may condense in the supply line 13. In addition, while the purge gas is supplied through the second discharge line 47, it is heated by the heating device 22, it is possible to prevent the condensation of the raw material in the vaporizer, etc. that may occur when the cold purge gas is supplied as it is. .
상기와 같은 구성에 따른 본 발명의 작용을 설명하면 다음과 같다.Referring to the operation of the present invention according to the configuration as described above are as follows.
먼저, 원료탱크(12)에서 저장된 원료를 반응기로 보내려면, 먼저 제5밸브 내지 제10밸브를 차단하고, 액체소스를 공급하기 위한 온-오프(on-off) 밸브인 제1밸브(25)를 열어 준 후, 제2밸브(32), 제3밸브(35), 제4밸브(42)를 순차적으로 연다. 원료탱크(12)에서 나온 액체원료는 제2밸브(32)를 통해 제1유량제어기(34)로 보내지고, 일정한 양으로 제어된 원료액체는 제3밸브(35)를 통해 기화기(39)로 보내진다. 기화된 원료는 제4밸브(42)를 거쳐 반응기로 공급된다. 이때 공급되는 원료의 압력은 압력게이지(29)를 통해서 알 수 있다.First, in order to send the raw material stored in the raw material tank 12 to the reactor, firstly, the fifth valve to the tenth valve is shut off, and the first valve 25 which is an on-off valve for supplying a liquid source. After opening, the second valve 32, the third valve 35, and the fourth valve 42 are sequentially opened. The liquid raw material from the raw material tank 12 is sent to the first flow controller 34 through the second valve 32, and the raw liquid controlled in a constant amount to the vaporizer 39 through the third valve 35. Is sent. The vaporized raw material is supplied to the reactor via the fourth valve 42. At this time, the pressure of the raw material to be supplied can be known through the pressure gauge (29).
이후 반응기로 보내는 원료를 차단하기 위해서 제2밸브(32), 제3밸브(35), 제4밸브(42)를 닫고 가스라인 내에 잔류하고 있는 원료를 제거한다. 먼저, 제5밸브(45)를 열고, 가스배출펌프(도시하지 않음)를 가동시켜 공급라인(13)에 남아 있는 잔류 원료 가스를 배출한다. 이때, 퍼지가스-바람직하기로는 Ar 가스-를 제6밸브(49)를 열고 공급한다. 퍼지가스는 제2배출라인(47)을 통과하는 동안 가열장치(22)에 의해 가열되므로 기화기(39)에 남아있는 기체원료와 기화기(39)를 통과하고 반응기에 들어가지 못한 잔류기체원료의 응축 및 액화가 방지된다. 또한, 제7밸브(52)를 열고 액체배출 펌프(도시하지 않음) 가동시켜 공급라인(13)에 남아있는 잔류 액체 원료를 배출한다. 이때, 제8밸브(55)를 열고, 퍼지가스를 공급한다. 퍼지가스는 잔류 액체 원료를 밀어 제3배출라인(50)으로 잔류 액체 원료가 쉽게 빠져나갈 수 있게 한다. 이때, 공급되는 퍼지가스는 제1유량제어기(34)를 지나면서 제1유량 제어기(34) 내에 잔류하는 액체 원료를 밀어낸다. 퍼지가스는 제2유량제어기(59)를 통해 일정한 양만을 공급한다. 한편 제3밸브(35)와 제5밸브(45)를 열고 퍼지가스를 공급하면, 제3밸브(35)와 기화기(39) 사이에 있는 잔류액체도 배출시킬 수 있다.Then, in order to block the raw material sent to the reactor, the second valve 32, the third valve 35 and the fourth valve 42 are closed to remove the raw material remaining in the gas line. First, the fifth valve 45 is opened, and a gas discharge pump (not shown) is operated to discharge residual raw material gas remaining in the supply line 13. At this time, purge gas-preferably Ar gas-is supplied by opening the sixth valve 49. Since the purge gas is heated by the heating device 22 while passing through the second discharge line 47, the condensation of the gaseous material remaining in the vaporizer 39 and the remaining gaseous raw material which has not passed into the reactor after passing through the vaporizer 39 And liquefaction is prevented. In addition, the seventh valve 52 is opened and a liquid discharge pump (not shown) is operated to discharge residual liquid raw material remaining in the supply line 13. At this time, the eighth valve 55 is opened to supply the purge gas. The purge gas pushes the residual liquid raw material to allow the residual liquid raw material to easily exit to the third discharge line 50. At this time, the supplied purge gas pushes the liquid raw material remaining in the first flow controller 34 while passing through the first flow controller 34. The purge gas supplies only a certain amount through the second flow controller (59). Meanwhile, when the third valve 35 and the fifth valve 45 are opened and the purge gas is supplied, residual liquid between the third valve 35 and the vaporizer 39 may also be discharged.
액체 탱크(12)에 있는 액체 원료를 모두 사용한 후에는 제9밸브(64)를 열어 액체탱크(12)에 액체원료를 다시 채워 넣는다. 제9밸브(64)를 닫고, 제10밸브(65)을 연 후 보충라인으로 퍼지가스를 공급하면 보충라인 및 제2밸브(34)이후의 공급라인에 있는 잔류액체를 배출할 수 있다.After the liquid raw material in the liquid tank 12 is used up, the ninth valve 64 is opened to refill the liquid raw material in the liquid tank 12. When the ninth valve 64 is closed, the tenth valve 65 is opened, and the purge gas is supplied to the replenishment line, residual liquid in the replenishment line and the supply line after the second valve 34 may be discharged.
위와 같은 본 발명의 구성에 따르면, 원료공급 라인 내에 잔류하는 가스가 응축되는 문제를 방지할 수 있다. 원료 공급라인과 액체유량제어기에 잔류하는 액체원료를 완전히 제거할 수 있어, 소스라인에 응축되어 압력이 변화하거나 관이 좁아지거나 응축된 소스가 또 다른 소스 시스템으로 작용하는 문제없이 항상 동일한 액체운반 시스템 상태에서 공정을 수행하는 것이 가능하다. 원료가 반응기 내로 공급되는 동안에는 배출라인과 펌프를 닫으므로, 필요 없는 원료의 낭비가 없다. 원료탱크에서 반응기까지의 공급라인의 길이가 짧고 구조가 단순하여 장치의 면적을 줄일 수 있고 유지비용이 감소되어 매우 경제적이다. 이 액체운반시스템을 화학 기상 증착 장치에 적용함으로써 상기 장치에서 형성되는 막의 균일성과 재현성 특성을 향상시킬 수 있다.According to the configuration of the present invention as described above, it is possible to prevent the problem that the gas remaining in the raw material supply line is condensed. Liquids remaining in the raw material supply line and the liquid flow controller can be completely removed, so that the same liquid transport system is always condensed in the source line without the problem of changing pressure, narrowing the pipe, or condensed source acting as another source system It is possible to carry out the process in a state. The discharge line and pump are closed while the raw material is fed into the reactor, eliminating unnecessary waste of raw material. It is very economical because the length of the feed line from the raw material tank to the reactor is short and the structure is simple, which reduces the area of the apparatus and the maintenance cost. By applying this liquid transport system to a chemical vapor deposition apparatus, the uniformity and reproducibility characteristics of the film formed in the apparatus can be improved.
Claims (5)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402678B1 (en) * | 2000-12-29 | 2003-10-22 | 주식회사 세미텔 | A evaporation vapor deposition system |
| KR20030085826A (en) * | 2002-05-02 | 2003-11-07 | 주성엔지니어링(주) | Purge method of liquid delivery system |
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1998
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402678B1 (en) * | 2000-12-29 | 2003-10-22 | 주식회사 세미텔 | A evaporation vapor deposition system |
| KR20030085826A (en) * | 2002-05-02 | 2003-11-07 | 주성엔지니어링(주) | Purge method of liquid delivery system |
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