KR19990069669A - Reticle stage of scanner for semiconductor device manufacturing - Google Patents

Abstract

The present invention relates to a reticle stage of a scanner for manufacturing a semiconductor device, which moves in one direction and exposes a wafer located below.

The present invention is provided with a first mirror capable of reflecting the scanned light on one outer front surface, a second mirror capable of reflecting the scanned light on the other outer front surface adjacent to the first mirror, and a reticle In the reticle stage of a semiconductor device scanner for exposing a wafer positioned below the seat by moving it by a drive of a driving source, and spaced apart by portions of the first mirror at a position spaced a predetermined distance from the first mirror. A plurality of separation distance measuring means for measuring the distance is provided, and another plurality of separation distance measuring means for measuring the separation distance for each part of the second mirror in a position spaced apart from the second mirror a predetermined distance Characterized in that it is provided.

Therefore, it is possible to prevent the occurrence of exposure failure due to the abnormality of the inclination of the reticle stage.

Description

Reticle stage of scanner for semiconductor device manufacturing

The present invention relates to a reticle stage of a scanner for semiconductor device manufacturing, and more particularly, to a reticle stage of a scanner for semiconductor device manufacturing for exposing a wafer located below and moving in one direction.

Usually, in the semiconductor device manufacturing process, a specific film is formed on a wafer, a photoresist is applied on the specific film, and then an exposure process is performed using an exposure apparatus. Steppers, scanners, and the like are used as the exposure equipment.

In the exposure process using the scanner, a light source capable of scanning light is installed at a position spaced a predetermined distance upward, and a reticle stage having a reticle mounted thereon is driven in one direction by driving of a driving source. This is done by scanning the wafer located below and moving. One side of the reticle stage of the scanner for the exposure process is provided with a device capable of measuring the degree of tilting the reticle stage in one direction due to various causes during wafer scanning using light of a specific wavelength.

Referring to FIG. 1, a first mirror 12 capable of reflecting scanned light on one side of a reticle stage 10 that moves in one direction by exposing a wafer located below by a driving source (not shown) is exposed. Is formed, and on the other side adjacent to the first mirror 12, a second mirror 14 capable of reflecting the scanned light is formed.

Further, at a position spaced apart from the first mirror 12 by a predetermined distance, a separation distance measuring means X1 (16) consisting of a light source generator and a detection device is provided. The light source generator of the separation distance measuring means X1 (16) is capable of scanning light of a specific wavelength to the first mirror (12), and the detection apparatus of the separation distance measuring means (X1) 16 of the first mirror ( By detecting the light of the specific wavelength reflected by 12, it is possible to measure the separation distance between the separation distance measuring means X1 (16) and the first mirror (12).

In addition, the distance between the second mirror 14 and the predetermined distance spaced apart distance measuring means Y1 (18) and the distance measuring means Y2 (20) are provided. The separation distance measuring means Y1 (18) and the separation distance measuring means Y2 (20) are provided with a light source generator and a detection apparatus, respectively. The light source generator is configured to scan light of a specific wavelength to a specific portion of the first mirror 12, and the detection device detects the light of the specific wavelength reflected from the second mirror 14 to separate the separation distance. It is possible to measure the separation distance between the measuring means Y1 18 or the separation distance measuring means Y2 20 and the second mirror 14.

Therefore, when the reticle is seated on the reticle stage 10, the reticle stage 10 moves in one direction by the driving of the driving source and scans the wafer located below. At this time, the light source generator of the separation distance measuring means X1 (16) is to scan the light having a wavelength of 633nm, etc. to the first mirror 12, the light scanned by the first mirror 12 is reflected 634 The separation distance X1 between the separation distance measuring means X1 16 and the first mirror 12 is measured by being changed to nm or the like and being detected by the detection device of the separation distance measuring means X1 16 again. Further, the light source generator of the separation distance measuring means Y1 18 scans the light having a wavelength of 633 nm or the like to the second mirror 14, and the light scanned by the second mirror 14 is reflected to 634 nm. And the like is detected by the detection device of the separation distance measuring means Y1 18 again, and the separation distance Y1 between the separation distance measuring means Y1 18 and the second mirror 14 is measured. In addition, the distance measuring means Y2 (20) scans the light having a wavelength of 633nm, etc. to the second mirror 14, the light scanned by the second mirror 14 is reflected to change to 634nm, etc. Then, the separation distance Y2 between the distance measurement means Y2 20 and the second mirror 14 is measured by being detected by the detention apparatus of the distance measurement means Y2 20 again.

Then, the average distance between the distance measuring means Y1 (18) and the distance measuring means Y2 (20) and the second mirror 14 is calculated arithmetically by Y1 + Y2 / 2, and the distance measurement is performed by Y1-Y2. The difference between the separation distance between the means Y1 (18) and the second mirror 14 and the separation distance between the measurement means Y2 (20) and the second mirror (14) is arithmetically calculated so that the second mirror ( The tilt Tilt of the reticle stage 10 on which the 14 is formed can be obtained. If the inclination of the reticle stage 10 is equal to or greater than a reference value required as a result of the arithmetic calculation, a correction operation is performed on the reticle stage 10 of the scanner as the exposure apparatus.

However, since only the distance measuring means X1 (16) is provided at one side of the first mirror 12, the reticle in which the first mirror 12 is formed by arithmetically calculating the inclination of the reticle stage 10 in which the first mirror 12 is formed. There is a problem that poor exposure of the highly integrated semiconductor device, in which the size of the pattern becomes smaller, due to the abnormality of the inclination of the stage 10.

Disclosure of Invention An object of the present invention is to provide a reticle stage of a scanner for manufacturing a semiconductor device, which can prevent exposure failure due to an abnormality of an inclination of a reticle stage having a first mirror and an inclination of a reticle stage having a second mirror. There is.

1 is a view for explaining a reticle stage of a conventional semiconductor device manufacturing scanner.

2 is a view for explaining an embodiment of a reticle stage of a scanner for semiconductor device manufacturing according to the present invention.

※ Explanation of symbols for main parts of drawing

10, 30: reticle stage 12, 32: first mirror

14, 34: second mirror 16, 36: separation distance measuring means X1

18, 40: separation distance measuring means Y1 20, 42: separation distance measuring means Y2

38: distance measurement means X2

The reticle stage of the scanner for manufacturing a semiconductor device according to the present invention for achieving the above object is provided with a first mirror capable of reflecting the scanned light on one outer front, scanning on the other outer front adjacent to the first mirror A reticle stage of a scanner for manufacturing a semiconductor device, which is provided with a second mirror capable of reflecting light, and which exposes a wafer positioned under the reticle to be moved by a drive source and exposed under the reticle. And a plurality of separation distance measuring means for measuring a separation distance for each part of the first mirror at a predetermined distance from the predetermined distance, and for each part of the second mirror at a position spaced apart from the second mirror at a predetermined distance. Another number of separation distances that can measure distance It characterized in that the means are provided.

The plurality of separation distance measuring means may analyze the separation distance by analyzing a light source generating device capable of scanning light of a specific wavelength and the specific wavelength reflected by the light scanned by the light source generating device from the first mirror or the second mirror. A detection device capable of measuring a separation distance between the measuring means and the first mirror or the second mirror may be provided.

In addition, the plurality of separation distance measuring means may be spaced apart from each other by a predetermined distance may be installed aligned in one direction.

The plurality of separation distance measuring means may include two separation distance measuring means spaced apart from each other by a predetermined interval.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 2, a reticle stage 30 is provided which exposes a wafer positioned below and moved in one direction by driving of a driving source (not shown). One side of the reticle stage 30 is formed with a first mirror 32 capable of reflecting the scanned light, and the scanned light on the other side of the reticle stage 30 adjacent to the first mirror 32 Another second mirror 34 capable of reflecting is formed. In addition, the distance measuring means X1 (36) and the distance measuring means X2 (38) formed of a light source generator and a detection apparatus are provided at a position spaced apart from the first mirror (32) by a predetermined distance. The light source generator is capable of scanning light of a specific wavelength to the first mirror 32, and the detection device detects the light of the specific wavelength reflected from the first mirror 32 to measure the separation distance X1. (36) or the separation distance measuring means X2 (38) and it is possible to measure the separation distance between the first mirror (32). The distance measuring means X1 36 and the distance measuring means X2 38 are spaced apart from each other by a predetermined interval and are aligned in one direction.

Further, at a position spaced apart from the second mirror 34 by a predetermined distance, a distance measurement means Y1 40 and a distance distance measurement means Y2 42 made of a light source generator and a detection device are provided. The light source generator is capable of scanning light of a specific wavelength to the second mirror 34, and the detection device detects the light of the specific wavelength reflected from the second mirror 34, so that the distance measuring means Y1. 40 or the separation distance measuring means Y2 (42) and the distance between the second mirror 34 can be measured. The distance measuring means Y1 40 and the distance measuring means Y2 42 are spaced apart from each other by a predetermined interval and are aligned in one direction.

Therefore, when the reticle is seated on the reticle stage 30 and the wafer to be exposed is positioned below the reticle stage for the progress of the exposure process, the reticle stage 10 moves in one direction by the driving of the driving source and scans the wafer. . At this time, the light source generator of the separation distance measuring means X1 36 scans the light having a wavelength of 633 nm or the like to the first mirror 32, and the light source generator of the separation distance measuring means X2 38 is also 633 nm. Light having a wavelength of equal to the first mirror 32 is scanned. The light scanned by the first mirror 32 in the light source generator of the separation distance measuring means X1 (36) and the separation distance measuring means X2 (38) is reflected to the separation distance measuring means X1 (36) and the separation distance measuring means X2. The distance between the distance measuring means X1 (36) and the first mirror 32 and the distance between the distance measuring means X2 (38) and the first mirror (32) are respectively detected by the detection apparatus of (38). X2 is measured. Subsequently, the inclination of the reticle stage 30 on which the first mirror 32 is formed may be obtained by X1-X2.

Further, the light source generator of the separation distance measuring means Y1 40 scans the light having a wavelength of 633 nm or the like to the second mirror 34, and the light source generator of the separation distance measuring means Y2 38 is 633 nm or the like. The light having the wavelength of 2 is scanned to the second mirror 34. The light scanned by the second mirror 34 in the light source generator of the separation distance measuring means Y1 40 and the separation distance measuring means Y2 42 is reflected to be the separation distance measuring means Y1 40 and the separation distance measuring means Y2. The distance between the distance measuring means Y1 (40) and the second mirror 34, and the distance between the distance measuring means Y2 (42) and the second mirror 34, respectively, by detecting the detection device of (42) Y2 is measured. Then, the difference between the separation distance between the separation distance measuring means Y1 (40) and the second mirror 34 and the separation distance between the separation distance measuring means Y2 (42) and the second mirror 34 is arithmetically calculated by Y1-Y2. Thus, the inclination of the reticle stage 30 on which the second mirror 34 is formed can be obtained.

If the inclination of the reticle stage 10 in which the first mirror 32 is formed or the reticle stage 30 in which the second mirror 34 is formed is equal to or greater than a reference value required as a result of the arithmetic calculation, the reticle stage of the scanner as the exposure equipment. Proceed with the correction for (30).

Therefore, according to the present invention, a plurality of separation distance measuring means are provided on one side of the reticle stage on which the first mirror is formed and on the other side of the reticle stage on which the second mirror is formed, so that the slope and the second mirror of the reticle stage on which the first mirror is formed By arithmetically calculating the inclination of the formed reticle stage, by correcting the inclination of the inclination of the reticle stage on the basis of this, there is an effect of preventing the exposure failure due to the inclination of the inclination of the reticle stage.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (4)

A first mirror is provided to reflect the scanned light on one outer front surface, a second mirror is provided to reflect the scanned light on the other outer front surface adjacent to the first mirror, and a reticle is seated thereon. In the reticle stage of the scanner for semiconductor device manufacturing to move by the drive of the drive source to expose the wafer located below the A plurality of separation distance measuring means for measuring the separation distance for each part of the first mirror at a position spaced apart from the first mirror is provided, and the second mirror in a position spaced a predetermined distance from the second mirror A reticle stage of a scanner for manufacturing a semiconductor device, characterized in that a plurality of separation distance measuring means for measuring the separation distance for each part of the device is provided. The method of claim 1, The plurality of separation distance measuring means may analyze the separation distance by analyzing a light source generating device capable of scanning light of a specific wavelength and the specific wavelength reflected by the light scanned by the light source generating device from the first mirror or the second mirror. A reticle stage of a scanner for manufacturing a semiconductor device, comprising a detection device capable of measuring a separation distance between the measuring means and the first mirror or the second mirror. The method of claim 1, The plurality of separation distance measuring means is a reticle stage of the scanner for manufacturing a semiconductor device, characterized in that the predetermined distance is spaced apart from each other arranged in one direction. The method of claim 1, The plurality of separation distance measuring means is a reticle stage of the scanner for manufacturing a semiconductor device, characterized in that consisting of two spaced apart from each other by a predetermined interval.