KR19990069265A - Semiconductor process inspector - Google Patents
Semiconductor process inspector Download PDFInfo
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- KR19990069265A KR19990069265A KR1019980003401A KR19980003401A KR19990069265A KR 19990069265 A KR19990069265 A KR 19990069265A KR 1019980003401 A KR1019980003401 A KR 1019980003401A KR 19980003401 A KR19980003401 A KR 19980003401A KR 19990069265 A KR19990069265 A KR 19990069265A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Examining Or Testing Airtightness (AREA)
Abstract
본 발명에 의한 반도체의 공정진행관 검사장치는 공정진행관의 둘레에 밀폐되도록 설치한 밀폐용기와, 상기 밀폐용기의 외부 일측으로부터 인입하여 상기 공정진행관 내로 헬륨가스를 주입하는 헬륨가스 인입관과, 상기 밀폐용기의 내부 일측에 설치하여 공정진행관내로 주입된 헬륨가스의 누출을 감지하는 헬륨가스검지기와, 상기 헬륨가스검지기와 연결되도록 밀폐용기 외부에 설치하여 누출되는 헬륨가스량을 표시하는 헬륨누출량표시부와, 상기 헬륨누출량표시부를 제어하도록 헬륨누출량표시부의 일측에 설치한 헬륨누출량판단부로 구성되어, 공정진행관에 이상이 생겼을 때 가열로의 온도를 유지한 채 공정진행관의 고장원인을 쉽게 발견할 수 있어, 신뢰성을 높일 수 있도록 하였다.The process progress tube inspection apparatus of a semiconductor according to the present invention includes a sealed container installed to be sealed around a process progress tube, a helium gas inlet pipe which introduces helium gas into an outside of the sealed container and injects helium gas into the process progress tube; Helium gas detector installed on one side of the sealed container to detect the leak of helium gas injected into the process progress tube, and helium leak amount indicating the amount of helium gas leaked by installing outside the sealed container to be connected to the helium gas detector It is composed of a display part and a helium leak amount determining part installed on one side of the helium leak amount display part to control the helium leak amount display part, and easily detect the cause of failure of the process flow pipe while maintaining the temperature of the heating furnace when an error occurs in the process pipe. It was possible to improve reliability.
Description
본 발명은 반도체의 공정진행관 검사장치에 관한 것으로, 특히 공정진행관에 이상이 생겼을 때 가열로의 온도를 유지한 채 공정진행관의 고장원인을 쉽게 발견할 수 있어, 신뢰성을 높일 수 있도록 한 반도체의 공정진행관 이상유무를 판별하는 검사장치에 관한 것이다.The present invention relates to an apparatus for inspecting a process progress tube of a semiconductor, and in particular, when an abnormality occurs in a process progress tube, it is possible to easily find a cause of failure of the process progress tube while maintaining the temperature of the heating furnace, thereby improving reliability. The present invention relates to an inspection apparatus for determining the presence or absence of abnormality in the process progression tubes of semiconductors.
일반적으로 반도체 제조공정중 산화막 형성 및 불순물 확산을 목적으로 전기로를 사용하게 되는데, 이때 사용되는 공정진행관의 경우는 고온 및 불순물 함유가 없는 석영관으로 제조하여 사용한다.In general, an electric furnace is used to form an oxide film and diffuse impurities in a semiconductor manufacturing process. In this case, a process tube used is manufactured by using a quartz tube without high temperature and impurities.
종래의 기술에 의한 반도체의 공정진행관은 도 1에 도시한 바와 같이, 석영관으로 이루어진 공정진행관(2)과, 상기 공정진행관(2)의 하부를 취부되는 셔터(3)와, 상기 공정진행관(2)의 일측에 설치하여 공정진행관(2)의 내부로 공정가스를 유입하는 공정가스인입구(1)로 구성된다.As shown in FIG. 1, a process progress tube of a semiconductor according to the prior art includes a process progress tube 2 made of a quartz tube, a shutter 3 attached to a lower portion of the process progress tube 2, and It is installed on one side of the process progress pipe (2) is composed of a process gas inlet (1) for introducing the process gas into the process progress pipe (2).
이와 같이 구성된 반도체의 공정진행관(2)은 저항가열방식의 로 내에서 웨이퍼를 둘러싼 형태로 제작되어 외부공기의 유입을 방지하여 부가적 화학반응을 방지하고, 공정진행용 가스를 내부로 유입할 수 있는 공정가스인입구(1)를 장착하여 열처리 공정을 진행하도록 한다.The process progress tube 2 of the semiconductor configured as described above is manufactured in a shape surrounding the wafer in a furnace of a resistance heating method to prevent the introduction of external air, thereby preventing additional chemical reactions, and introducing process gas into the process. Process gas inlet (1) can be equipped to proceed the heat treatment process.
열처리 공정진행장비의 경우 공정진행관(2)이 수직이나 수평형태로 장착 사용되는데, 석영관의 경우 충격 및 열처리 후의 스트레스로 인해 석영관에 금이 가거나 파손되는 현상이 발생하게 되며, 상기 공정진행관(2)에 이상이 생겼을 때 가열로의 온도를 상온까지 떨어뜨려야 육안으로 확인이 가능하고, 또한 육안 확인의 경우 판단기준이 없으므로 정확성을 기하기가 어렵게 되는 문제점이 있고, 이로 인해 장비에 다시 조건을 잡고 사용하는데 상당한 시간이 소요되는 문제점이 있는 바, 본 발명의 목적은 상기와 같은 문제점을 고려하여 안출한 것으로, 공정진행관에 이상이 생겼을 때 가열로의 온도를 유지한 채 공정진행관의 고장원인을 쉽게 발견할 수 있어, 신뢰성을 높일 수 있도록 한 반도체의 공정진행관 검사장치를 제공함에 있다.In the case of heat treatment process progress equipment, the process progress tube 2 is used to be mounted in a vertical or horizontal form. In the case of quartz tube, the quartz tube is cracked or damaged due to impact and stress after heat treatment. When an abnormality occurs in the pipe (2), the temperature of the heating furnace must be lowered to room temperature so that the naked eye can check it, and in the case of the naked eye check, there is no judging standard, which makes it difficult to ensure accuracy. There is a problem in that it takes a considerable time to use the conditions, the object of the present invention is devised in consideration of the above problems, the process progress tube while maintaining the temperature of the heating furnace when the process progress tube has an error It is to provide a process progress tube inspection apparatus of a semiconductor that can easily find the cause of the failure, and improve the reliability.
도 1은 종래의 기술에 의한 반도체의 공정진행관을 개략적으로 나타내는 단면도.1 is a cross-sectional view schematically showing a process progress tube of a semiconductor according to the prior art.
도 2는 본 발명에 의한 반도체의 공정진행관 검사장치를 개략적으로 나타낸 단면도.Figure 2 is a cross-sectional view schematically showing a process progress tube inspection apparatus of a semiconductor according to the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
11 ; 헬륨가스인입관 12 ; 공정진행관11; Helium gas drawing pipe 12; Fair Officer
13 ; 셔터 14 ; 밀폐용기13; Shutter 14; Airtight containers
15 ; 헬륨가스검지기 16 ; 헬륨누출량판단부15; Helium gas detector 16; Helium Leakage Determination
17 ; 헬륨누출량표시부17; Helium leak amount display
이러한, 본 발명의 목적은 공정진행관의 둘레에 밀폐되도록 설치한 밀폐용기와, 상기 밀폐용기의 외부 일측으로부터 인입하여 상기 공정진행관 내로 헬륨가스를 주입하는 헬륨가스 인입관과, 상기 밀폐용기의 내부 일측에 설치하여 공정진행관내로 주입된 헬륨가스의 누출을 감지하는 헬륨가스검지기와, 상기 헬륨가스검지기와 연결되도록 밀폐용기 외부에 설치하여 누출되는 헬륨가스량을 표시하는 헬륨누출량표시부와, 상기 헬륨누출량표시부를 제어하도록 헬륨누출량표시부의 일측에 설치한 헬륨누출량판단부에 의해 달성된다.The object of the present invention is a sealed container installed to be sealed around the process tube, the helium gas inlet tube to be introduced from the outer side of the sealed container to inject helium gas into the process tube, and the closed vessel A helium gas detector installed at one side of the inside to detect a leak of helium gas injected into the process progress tube, a helium leak amount display unit displaying an amount of helium gas leaked by being installed outside the sealed container to be connected to the helium gas detector, and the helium It is achieved by a helium leak amount determining portion provided on one side of the helium leak amount display portion to control the leak amount display portion.
이하, 본 발명에 의한 반도체의 공정진행관 검사장치를 첨부도면에 도시한 실시예에 따라서 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, the process progress tube inspection apparatus of the semiconductor by this invention is demonstrated according to the Example shown in an accompanying drawing.
도 2는 본 발명에 의한 반도체의 공정진행관 검사장치를 개략적으로 나타낸 단면도를 보인 것으로, 이에 도시한 바와 같이, 본 발명은 공정진행관의 둘레에 공정진행관을 넣은 후 밀폐되도록 설치한 밀폐용기(14)와, 상기 밀폐용기(14)의 외부 일측으로부터 인입하여 상기 공정진행관(12) 내로 헬륨가스를 주입하는 헬륨가스 인입관(11)과, 상기 밀폐용기(14)의 내부 일측에 설치하여 공정진행관(12)내로 주입된 헬륨가스의 공정진행관(12) 밖으로의 누출을 감지하는 헬륨가스검지기(15)와, 상기 헬륨가스검지기(15)와 연결되도록 밀폐용기(14) 외부에 설치하여 누출되는 헬륨가스량을 표시하는 헬륨누출량표시부(17)와, 상기 헬륨누출량표시부(17)를 제어하도록 헬륨누출량표시부(17)의 일측에 설치한 헬륨누출량판단부(16)로 구성된다. 도면중 미설명 부호 13은 셔터를 나타낸다.Figure 2 shows a schematic cross-sectional view showing a process progress tube inspection apparatus of a semiconductor according to the present invention, as shown in the present invention, the airtight container is installed to be sealed after putting the process progress tube in the periphery of the process progress tube (14), a helium gas inlet pipe (11) for injecting helium gas into the process progress pipe (12), which is drawn from an outer side of the sealed container (14), and installed at one inner side of the sealed container (14). And a helium gas detector 15 for detecting a leak of the helium gas injected into the process progress tube 12 out of the process progress tube 12 and outside the sealed container 14 so as to be connected to the helium gas detector 15. And a helium leak amount display portion 17 which displays the amount of helium gas leaking out, and a helium leak amount determination portion 16 provided on one side of the helium leak amount display portion 17 to control the helium leak amount display portion 17. In the figure, reference numeral 13 denotes a shutter.
이와 같이 구성된 본 발명에 의한 반도체의 공정진행관 검사장치의 작용효과를 설명한다.The effect of the process progress tube inspection apparatus of the semiconductor by this invention comprised in this way is demonstrated.
헬륨가스인입관(11)을 통해 공정진행관(12) 내부로 헬륨가스를 투입한다. 그리고 2∼3분 정도의 일정시간이 경과한 후 헬륨가스검지기(15)는 검지한 헬륨가스 검출신호를 헬륨 누출량판단부(16)로 제공한다. 이에 따라 헬륨 누출량 판단부(16)는 헬륨누출량표시부(17)로 현재 공정진행관(12)에서 누출되는 헬륨가스량을 표시한다. 여기서 상기 공정진행관(12)이 금이 가거나 깨어진 경우에는 공정진행관(12)이 밀폐용기(14)에 둘러싸여 밀폐되어 있으므로, 헬륨누출량판단부(16)에 의해 헬륨누출량표시부(17)에 누출된 가스량이 표시된다. 따라서 작업자는 공정진행관(12)에 이상이 있음을 쉽게 알수 있게 된다.Helium gas is introduced into the process progress tube 12 through the helium gas inlet pipe 11. After a predetermined time of about 2 to 3 minutes has elapsed, the helium gas detector 15 provides the detected helium gas detection signal to the helium leak amount determining unit 16. Accordingly, the helium leak amount determining unit 16 displays the amount of helium gas leaking from the current process progress tube 12 to the helium leak amount display unit 17. In this case, when the process progress tube 12 is cracked or broken, the process progress tube 12 is enclosed by the airtight container 14 and is sealed, and thus the helium leak amount determining unit 16 leaks to the helium leak amount display unit 17. The amount of gas used is displayed. Therefore, the worker can easily know that there is an error in the process progress tube (12).
이상에서 설명한 바와 같이, 본 발명에 의한 반도체의 공정진행관 검사장치는 공정진행관의 둘레에 밀폐되도록 설치한 밀폐용기와, 상기 밀폐용기의 외부 일측으로부터 인입하여 상기 공정진행관 내로 헬륨가스를 주입하는 헬륨가스 인입관과, 상기 밀폐용기의 내부 일측에 설치하여 공정진행관내로 주입된 헬륨가스의 누출을 감지하는 헬륨가스검지기와, 상기 헬륨가스검지기와 연결되도록 밀폐용기 외부에 설치하여 누출되는 헬륨가스량을 표시하는 헬륨누출량표시부와, 상기 헬륨누출량표시부를 제어하도록 헬륨누출량표시부의 일측에 설치한 헬륨누출량판단부로 구성되어, 공정진행관에 이상이 생겼을 때 가열로의 온도를 유지한 채 공정진행관의 고장원인을 쉽게 발견할 수 있어, 신뢰성을 높일 수 있도록 한 효과가 있다.As described above, the process progress tube inspection apparatus of the semiconductor according to the present invention is a sealed vessel installed to be sealed around the process progress tube, the helium gas is introduced into the process progress tube by entering from the outer side of the sealed vessel. A helium gas inlet pipe, a helium gas detector installed on one side of the sealed container to detect a leak of helium gas injected into the process chamber, and a helium leaked by being installed outside the sealed container so as to be connected to the helium gas detector. It consists of a helium leak amount display unit that displays the amount of gas, and a helium leak amount determination unit provided on one side of the helium leak amount display unit to control the helium leak amount display unit, and maintains the temperature of the heating furnace when an error occurs in the process tube. It is easy to find the cause of the failure, which has the effect of increasing the reliability.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980003401A KR100289388B1 (en) | 1998-02-06 | 1998-02-06 | Detecting device for semiconductor process tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980003401A KR100289388B1 (en) | 1998-02-06 | 1998-02-06 | Detecting device for semiconductor process tube |
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| Publication Number | Publication Date |
|---|---|
| KR19990069265A true KR19990069265A (en) | 1999-09-06 |
| KR100289388B1 KR100289388B1 (en) | 2001-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980003401A KR100289388B1 (en) | 1998-02-06 | 1998-02-06 | Detecting device for semiconductor process tube |
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| JP3267771B2 (en) * | 1993-10-29 | 2002-03-25 | アネルバ株式会社 | Plasma processing equipment |
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