KR19990058615A - Analysis Wafer Regeneration Method for Semiconductor Device Manufacturing - Google Patents
Analysis Wafer Regeneration Method for Semiconductor Device Manufacturing Download PDFInfo
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- KR19990058615A KR19990058615A KR1019970078757A KR19970078757A KR19990058615A KR 19990058615 A KR19990058615 A KR 19990058615A KR 1019970078757 A KR1019970078757 A KR 1019970078757A KR 19970078757 A KR19970078757 A KR 19970078757A KR 19990058615 A KR19990058615 A KR 19990058615A
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Abstract
본 발명은 알루미늄막이 형성된 반도체장치 제조용 분석 웨이퍼 재생방법에 관한 것이다.The present invention relates to a method for reproducing an analytical wafer for manufacturing a semiconductor device in which an aluminum film is formed.
본 발명은, 산화막 및 일정량의 불순물이 함유된 알루미늄막이 순차적으로 형성된 반도체장치 제조용 분석 웨이퍼 재생방법에 있어서, 질산(HNO3), 인산(H3PO4), 초산(CH3COOH) 및 탈이온수가 일정 비율로 혼합된 제 1 케미컬이 일정량 저장된 제 1 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계, 상기 분석 웨이퍼를 질산(HNO3), 불산(HF), 초산(CH3COOH) 및 초순수가 일정 비율로 혼합된 제 2 케미컬이 일정량 저장된 제 2 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계 및 상기 분석 웨이퍼를 상기 산화막 제거용 제 3 케미컬이 일정량 저장된 제 3 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계를 구비하여 이루어지는 것을 특징으로 한다.The present invention relates to a method for reproducing analytical wafers for manufacturing a semiconductor device in which an oxide film and an aluminum film containing a predetermined amount of impurities are sequentially formed, wherein nitric acid (HNO 3 ), phosphoric acid (H 3 PO 4 ), acetic acid (CH 3 COOH), and deionized water are used. After the analysis wafer is put into the first tank in which the first chemical mixed at a predetermined ratio is stored in a predetermined amount for a predetermined time, and then discharged, the analysis wafer is nitric acid (HNO 3 ), hydrofluoric acid (HF), acetic acid (CH 3). COOH) and the second wafer mixed with a predetermined amount of ultra-pure water in a predetermined amount of the inside of the second tank is stored in a predetermined amount of time, after the step of ejecting and the third wafer for removing the oxide film to the oxide wafer is removed It is characterized by comprising the step of discharging the analysis wafer after a predetermined time in the three tanks.
따라서, 분석 웨이퍼 상에 형성된 알루미늄막을 제거하여 재생할 수 있는 효과가 있다.Therefore, there is an effect that the aluminum film formed on the analysis wafer can be removed and regenerated.
Description
본 발명은 반도체장치 제조용 분석 웨이퍼 재생방법에 관한 것으로서, 보다 상세하게는 분석 웨이퍼 상에 알루미늄막이 형성된 반도체장치 제조용 분석 웨이퍼 재생방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for reproducing an analytical wafer for manufacturing a semiconductor device, and more particularly, to a method for reproducing an analytical wafer for manufacturing a semiconductor device in which an aluminum film is formed on an analytical wafer.
통상, 반도체장치 제조공정에서는 웨이퍼 상에 실리콘(Si), 구리(Cu) 등의 일정량의 불순물이 첨가된 알루미늄막 등의 금속막을 형성하기 위하여 스퍼터링(Sputtering)공정을 진행하고 있다. 상기 불순물은 알루미늄막이 후속공정의 진행에 의해서 붕괴되는 것을 방지하기 위하여 첨가된다.BACKGROUND ART In the semiconductor device manufacturing process, a sputtering process is generally performed to form a metal film such as an aluminum film to which a predetermined amount of impurities such as silicon (Si) and copper (Cu) are added. The impurity is added to prevent the aluminum film from collapsing by the subsequent process.
그리고, 상기 스퍼터링공정은 고전압이 인가된 진공챔버 내에 아르곤(Ar)가스를 주입시켜 비활성기체인 아르곤가스를 플라즈마(Plasma)상태로 변환시키면, 플라즈마상태의 아르곤가스가 높은 에너지를 가지면서 알루미늄 재질의 타겟(Target)쪽으로 움직여 타겟의 알루미늄 물질을 튕겨 내어 웨이퍼 상에 증착되도록 하는 공정이다.In the sputtering process, when argon gas is injected into a vacuum chamber to which a high voltage is applied to convert argon gas, which is an inert gas, into a plasma state, the plasma argon gas has a high energy and is made of aluminum. Moving toward the target (target) to bounce off the aluminum material of the target to be deposited on the wafer.
그리고, 정기적으로 상기 스퍼터링공정이 진행되는 스퍼터링설비의 공정조건의 이상유무를 확인하는 분석공정을 진행함으로서 공정불량을 사전에 방지하고 있다.In addition, process defects are prevented in advance by carrying out an analytical process that checks for abnormalities in the process conditions of the sputtering equipment where the sputtering process is performed periodically.
상기 분석공정은 먼저 산화막이 형성된 분석 웨이퍼 상에 스퍼터링공정을 진행하여 산화막 및 일정량의 불순물이 함유된 알루미늄막이 순차적으로 적층된 분석 웨이퍼를 준비함으로서 시작된다.The analytical process begins by first performing a sputtering process on an analytical wafer on which an oxide film is formed to prepare an analytical wafer in which an oxide film and an aluminum film containing a predetermined amount of impurities are sequentially stacked.
그리고, 상기 준비된 분석 웨이퍼를 분석설비에 투입하여 상기 알루미늄막 상에 존재하는 불순물의 정도, 알루미늄막의 두께 등을 측정함으로서 스퍼터링설비의 공정조건의 이상유무를 분석하고 있다.Then, the prepared analysis wafer is put into the analysis equipment, and the degree of impurity present on the aluminum film, the thickness of the aluminum film, and the like are measured to analyze the abnormality of the process conditions of the sputtering equipment.
그런데, 통상 상기 분석 웨이퍼는 수차례 분석 웨이퍼로 사용된 후에는 폐기처분되거나, 분석 웨이퍼의 전후면을 정밀하게 그라인딩(Grinding)하여 재생하였다.By the way, the analytical wafer is usually discarded after being used as an analytical wafer several times, or regenerated by precisely grinding the front and rear surfaces of the analytical wafer.
그러나, 상기 분석 웨이퍼를 그라인딩하는데는 많은 비용이 소모되며, 그라인딩에 의해서 분석 웨이퍼의 두께가 얇아져 재사용하는 과정에 약한 충격에도 깨지는 문제점이 있었다.However, grinding the analysis wafer is costly, and there is a problem in that the thickness of the analysis wafer becomes thin due to grinding, and even a weak impact on the reuse process is broken.
본 발명의 목적은, 웨이퍼 상에 산화막을 개재하여 알루미늄막이 형성된 분석 웨이퍼를 용이하게 재생할 수 있는 반도체장치 제조용 분석 웨이퍼 재생방법을 제공하는 데 있다.An object of the present invention is to provide a method for reproducing an analytical wafer for manufacturing a semiconductor device which can easily reproduce an analytical wafer on which an aluminum film is formed via an oxide film on the wafer.
본 발명의 다른 목적은 웨이퍼 상에 알루미늄막이 형성된 분석 웨이퍼를 용이하게 재생할 수 있는 반도체장치 제조용 분석 웨이퍼 재생방법을 제공하는 데 있다.Another object of the present invention is to provide a method for reproducing an analytical wafer for manufacturing a semiconductor device which can easily reproduce an analytical wafer having an aluminum film formed thereon.
도1 내지 도4는 본 발명에 따른 반도체장치 제조용 분석 웨이퍼 재생방법의 일 실시예를 설명하기 위한 공정도들이다.1 to 4 are process diagrams for explaining an embodiment of an analysis wafer regeneration method for manufacturing a semiconductor device according to the present invention.
※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing
10 : 웨이퍼 12 : 산화막10 wafer 12 oxide film
14 : 알루미늄막 16 : 잔유물14 aluminum film 16: residue
상기 목적을 달성하기 위한 본 발명에 따른 반도체장치 제조용 분석 웨이퍼 재생방법은, 산화막 및 일정량의 불순물이 함유된 알루미늄막이 순차적으로 형성된 반도체장치 제조용 분석 웨이퍼 재생방법에 있어서, (1) 질산(HNO3), 인산(H3PO4), 초산(CH3COOH) 및 탈이온수가 일정 비율로 혼합된 제 1 케미컬이 일정량 저장된 제 1 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계; (2) 상기 분석 웨이퍼를 질산(HNO3), 불산(HF), 초산(CH3COOH) 및 초순수가 일정 비율로 혼합된 제 2 케미컬이 일정량 저장된 제 2 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계; 및 (3) 상기 분석 웨이퍼를 상기 산화막 제거용 제 3 케미컬이 일정량 저장된 제 3 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계;를 구비하여 이루어지는 것을 특징으로 한다.The analysis wafer regeneration method for semiconductor device manufacturing according to the present invention for achieving the above object, in the analysis wafer regeneration method for semiconductor device manufacturing in which an oxide film and an aluminum film containing a predetermined amount of impurities are sequentially formed, (1) nitric acid (HNO 3 ) Injecting the analysis wafer into the first tank in which a predetermined amount of the first chemical, in which phosphoric acid (H 3 PO 4 ), acetic acid (CH 3 COOH) and deionized water are mixed at a predetermined rate, is discharged after a predetermined time; (2) The analysis wafer is introduced into the analysis tank for a predetermined time in a second tank storing a predetermined amount of a second chemical mixed with nitric acid (HNO 3 ), hydrofluoric acid (HF), acetic acid (CH 3 COOH) and ultrapure water at a predetermined ratio. Then releasing; And (3) injecting the analysis wafer into the third tank in which the third chemical for removing the oxide film is stored for a predetermined time and then discharging the analysis wafer.
상기 불순물은 실리콘(Si) 성분 또는 구리(Cu) 성분일 수 있다.The impurity may be a silicon (Si) component or a copper (Cu) component.
그리고, 상기 (3)의 단계를 수행한 이후 상기 웨이퍼를 세정하는 단계가 더 수행될 수 있다.After the step (3), the step of cleaning the wafer may be further performed.
그리고, 상기 세정 단계 후, 상기 웨이퍼를 건조하는 단계가 더 수행될 수 있다.After the cleaning step, the step of drying the wafer may be further performed.
또한, 상기 산화막 제거용 제 3 케미컬은 불화수소 및 탈이온수가 일정 비율로 혼합된 것일 수 있다.In addition, the third chemical for removing the oxide film may be a mixture of hydrogen fluoride and deionized water in a predetermined ratio.
그리고, 상기 산화막은 화학기상증착법 또는 확산(Diffusion)에 의해서 형성된 막질일 수 있다.The oxide film may be a film formed by chemical vapor deposition or diffusion.
또한, 본 발명에 따른 다른 반도체장치 제조용 분석 웨이퍼 재생방법은, 일정량의 불순물이 함유된 알루미늄막이 형성된 반도체장치 제조용 분석 웨이퍼 재생방법에 있어서, (1) 질산, 인산, 초산 및 탈이온수가 일정 비율로 혼합된 제 1 케미컬이 일정량 저장된 제 1 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계; 및 (2) 상기 분석 웨이퍼를 인산, 불산, 초산 및 초순수가 일정 비율로 혼합된 제 2 케미컬이 일정량 저장된 제 2 탱크 내부에 상기 분석 웨이퍼를 소정시간 투입한 후, 방출하는 단계;를 구비하여 이루어지는 것을 특징으로 한다.In addition, another method for reproducing an analytical wafer for manufacturing a semiconductor device according to the present invention is the method for reproducing an analytical wafer for manufacturing a semiconductor device in which an aluminum film containing a certain amount of impurities is formed, which comprises: (1) nitric acid, phosphoric acid, acetic acid and deionized water at a predetermined ratio; Discharging the analysis wafer into the first tank in which the mixed first chemical is stored in a predetermined amount for a predetermined time and then discharging the analysis wafer; And (2) injecting the analytical wafer into the second tank having a predetermined amount of a second chemical mixed with phosphoric acid, hydrofluoric acid, acetic acid, and ultrapure water at a predetermined ratio, and then ejecting the analytical wafer for a predetermined time. It is characterized by.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 따른 반도체장치 제조용 분석 웨이퍼 재생방법은, 도1에 도시된 바와 같이 산화막(12) 및 실리콘(Si), 구리(Cu) 등의 불순물이 일정량 첨가된 알루미늄막(14)이 순차적으로 형성된 분석 웨이퍼(10)를 질산(HNO3), 인산(H3PO4), 초산(CH3COOH) 및 탈이온수(Deionized water)가 일정 비율로 혼합된 제 1 케미컬이 일정량 저장된 제 1 탱크 내부에 소정시간 투입한 후, 방출한다. 상기 산화막(12)은 화학기상증착법에 의해서 형성된 BPSG(Boron Phosphorus Silicate Glass), PSG(Phospho-Silicate Glass), PEOX(Plasma Enhanced Oxide)일 수 있고, 상기 산화막(12)은 확산에 의해서 형성된 열산화막일 수 있다.In the analysis wafer regeneration method for manufacturing a semiconductor device according to the present invention, as shown in FIG. 1, an oxide film 12 and an aluminum film 14 to which a predetermined amount of impurities such as silicon (Si) and copper (Cu) are added are sequentially formed. The analysis wafer 10 is stored in a first tank in which a first chemical in which nitric acid (HNO 3 ), phosphoric acid (H 3 PO 4 ), acetic acid (CH 3 COOH), and deionized water is mixed in a predetermined ratio is stored. It is discharged after a predetermined time. The oxide layer 12 may be boron phosphorus silicate glass (BPSG), phospho-silicate glass (PSG), plasma enhanced oxide (PEOX) formed by chemical vapor deposition, and the oxide layer 12 may be a thermal oxide layer formed by diffusion. Can be.
이에 따라, 분석 웨이퍼(10) 상에 형성된 알루미늄막(14)의 알루미늄(Al) 성분은 제거되고 알루미늄막(14)의 실리콘, 구리 등의 불순물은 산화막(12) 상에 잔존하여 도2에 도시된 바와 같이 잔유물(16)을 형성하게 된다.Accordingly, the aluminum (Al) component of the aluminum film 14 formed on the analysis wafer 10 is removed, and impurities such as silicon and copper of the aluminum film 14 remain on the oxide film 12 and are shown in FIG. 2. As shown, the residue 16 is formed.
이후, 상기 도2에 도시된 바와 같이 산화막(12) 상에 잔유물(16)이 형성된 분석 웨이퍼(10)를 질산(HNO3), 불산(HF), 초산(CH3COOH) 및 초순수가 일정 비율로 혼합된 제 2 케미컬이 일정량 저장된 제 2 탱크 내부에 소정시간 투입한 후, 방출한다.Thereafter, as shown in FIG. 2, the analysis wafer 10 having the residue 16 formed on the oxide film 12 is disposed in a ratio of nitric acid (HNO 3 ), hydrofluoric acid (HF), acetic acid (CH 3 COOH), and ultrapure water. After mixing the second chemical into a predetermined amount of the second tank stored in a predetermined amount of time, it is discharged.
이에 따라, 도3에 도시된 바와 같이 웨이퍼의 산화막(12) 상에 형성된 잔유뮬(16)은 제 2 케미컬에 의해서 완전히 제거되고, 산화막(12)도 소정깊이만큼 식각된다.As a result, as shown in FIG. 3, the residual oil 16 formed on the oxide film 12 of the wafer is completely removed by the second chemical, and the oxide film 12 is also etched by a predetermined depth.
그리고, 상기 도3에 도시된 바와 같이 산화막(12)이 소정깊이만큼 식각된 분석 웨이퍼(10)를 불화수소 및 탈이온수가 일정비율로 혼합된 제 3 케미컬 등의 산화막(12) 제거용 케미컬이 일정량 저장된 제 3 탱크 내부에 소정시간 투입한 후, 방출함으로서 도4에 도시된 바와 같이 산화막(12)을 완전히 제거한다.As shown in FIG. 3, a chemical for removing the oxide film 12, such as a third chemical, in which the hydrogen fluoride and the deionized water are mixed at a predetermined ratio in the analysis wafer 10 in which the oxide film 12 is etched to a predetermined depth. After a predetermined amount of time is put into the third tank stored in a predetermined amount, the oxide film 12 is completely removed as shown in FIG.
마지막으로, 상기 도4에 도시된 바와 같이 산화막이 제거된 분석 웨이퍼(10)를 탈이온수 등의 세정액을 사용하여 세정한 후, 건조한다.Finally, as shown in FIG. 4, the analysis wafer 10 from which the oxide film has been removed is cleaned using a cleaning solution such as deionized water and then dried.
작업자에 따라서, 분석 웨이퍼 상에 실리콘, 구리 등의 불순물이 일정량 첨가된 알루미늄막이 형성된 분석 웨이퍼는 상기 제 1 탱크 및 제 2 탱크 내부에서 진행되는 공정을 진행함으로서 분석 웨이퍼 상에 형성된 알루미늄막을 제거할 수 있다.According to an operator, an analysis wafer in which an aluminum film in which a certain amount of impurities such as silicon and copper are added on an analysis wafer is formed can be removed by performing a process performed in the first tank and the second tank. have.
따라서, 본 발명에 의하면 산화막 및 일정량의 불순물이 함유된 알루미늄막이 순차적으로 형성된 분석 웨이퍼의 상기 산화막 및 알루미늄막을 용이하게 제거하여 재생할 수 있는 효과가 있다.Therefore, according to the present invention, there is an effect that the oxide film and the aluminum film of the analysis wafer in which the oxide film and the aluminum film containing a predetermined amount of impurities are sequentially formed can be easily removed and reproduced.
그리고, 분석 웨이퍼 상에 형성된 일정량의 불순물이 함유된 알루미늄막을 용이하게 제거하여 재생할 수 있는 효과가 있다.In addition, there is an effect that the aluminum film containing a certain amount of impurities formed on the analysis wafer can be easily removed and regenerated.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (9)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019970078757A KR19990058615A (en) | 1997-12-30 | 1997-12-30 | Analysis Wafer Regeneration Method for Semiconductor Device Manufacturing |
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| KR1019970078757A KR19990058615A (en) | 1997-12-30 | 1997-12-30 | Analysis Wafer Regeneration Method for Semiconductor Device Manufacturing |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100670919B1 (en) * | 2005-01-12 | 2007-01-19 | 삼성전자주식회사 | Method of removing a low-dielectric layer and method of recycling a wafer using the same |
| KR101014789B1 (en) * | 2008-09-22 | 2011-02-15 | 최상근 | The Recycling method of silicone wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140928A (en) * | 1988-11-21 | 1990-05-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH07122532A (en) * | 1993-10-26 | 1995-05-12 | Mitsubishi Materials Corp | Production of regenerated wafer |
| JPH09304947A (en) * | 1996-05-17 | 1997-11-28 | Tokyo Ohka Kogyo Co Ltd | Coat film separating liquid for forming metallic oxide film, separating method and substrate recovering method |
| KR19980026265A (en) * | 1996-10-08 | 1998-07-15 | 김광호 | Etch Liquid Composition for Semiconductor Wafer Regeneration |
| KR19990025133A (en) * | 1997-09-10 | 1999-04-06 | 윤종용 | Wafer Regeneration Method for Semiconductor Analysis |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140928A (en) * | 1988-11-21 | 1990-05-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH07122532A (en) * | 1993-10-26 | 1995-05-12 | Mitsubishi Materials Corp | Production of regenerated wafer |
| JPH09304947A (en) * | 1996-05-17 | 1997-11-28 | Tokyo Ohka Kogyo Co Ltd | Coat film separating liquid for forming metallic oxide film, separating method and substrate recovering method |
| KR19980026265A (en) * | 1996-10-08 | 1998-07-15 | 김광호 | Etch Liquid Composition for Semiconductor Wafer Regeneration |
| KR19990025133A (en) * | 1997-09-10 | 1999-04-06 | 윤종용 | Wafer Regeneration Method for Semiconductor Analysis |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100670919B1 (en) * | 2005-01-12 | 2007-01-19 | 삼성전자주식회사 | Method of removing a low-dielectric layer and method of recycling a wafer using the same |
| KR101014789B1 (en) * | 2008-09-22 | 2011-02-15 | 최상근 | The Recycling method of silicone wafer |
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