KR19990057885A - Pattern forming mask to prevent spacer collapse - Google Patents

Abstract

The present invention provides a main mask pattern and a main mask pattern defining a pattern region for forming a pattern capable of preventing the collapse of a spacer formed on a pattern sidewall formed in the scribe line region by forming a cylindrical capacitor in the cell region. A mask made of an auxiliary mask pattern formed therein is provided.

Description

Pattern forming mask to prevent spacer collapse

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to forming a pattern capable of preventing the conductive film pattern remaining in the form of a spacer in the pattern formed in the scribe line region by forming a cylindrical capacitor in the cell region. It is about a mask.

With high integration of semiconductor devices, a capacitor structure for obtaining large capacitance even in a small area has been used. As an example, a method of forming sidewalls to increase the area of the charge storage electrode is used. In a process for forming the sidewalls of the charge storage electrode, a large pattern such as an overlay box of a scribe line is used. Sidewalls are formed. The sidewalls formed on the sidewalls of the overlap marks have a large aspect ratio and are easily broken to cause contamination.

1A to 1D are cross-sectional views of a semiconductor device manufacturing process according to the prior art. The semiconductor device manufacturing method according to the prior art is made as follows.

First, as shown in FIG. 1A, the interlayer insulating layer 11 is formed on the semiconductor substrate 10 and selectively etched to form a charge storage electrode contact hole c, and then inside the charge storage electrode contact hole c. And a first polysilicon film 12 is deposited on the interlayer insulating film 11, an oxide film 13 is formed, and a photosensitive film pattern 14 is formed. The photoresist pattern 14 defines a charge storage electrode region in a cell region and an overlap mark region in a scribe line.

Next, as illustrated in FIG. 1B, the oxide layer 13 and the first polysilicon layer 12 are selectively etched using the photoresist pattern 14 as an etch mask, and the charge storage electrode (eg, a charge storage electrode) may be formed in the cell region and the scribe line, respectively. 12A) and the overlap mark 12B pattern are formed, and the photosensitive film pattern 14 is removed.

Next, as shown in FIG. 1C, after forming the second polysilicon film 15 on the entire structure, the second polysilicon film 15 remains on the charge storage electrode 12A side by etching the entire surface. At this time, the second polysilicon film 15 remains on the pattern mark side surface of the overlap mark 12B of the scribe line.

Next, the oxide film is removed as shown in FIG. At this time, the second polysilicon film 15 remains in the form of sidewalls on the side surface of the overlap mark 12B of the scribe line.

2A to 2D are respectively a perspective view, a bottom view, a sectional view, and a plan view of an overlap mark formed on the scribe line as described above, and FIG. 2C is a cross-sectional view along the line AA ′ of FIG. 2A.

As described above, the polysilicon film 15 that remains in the form of sidewalls in the superimposed mark pattern having a size of about 10 μm is unstable because its height h is usually several thousand Å but its width w is only several tens 수십.

3 is a SEM photograph showing that the polysilicon film forming the sidewalls of the overlap marks as described above is destroyed in a subsequent process, and the broken polysilicon film is a cause of contamination and deteriorates device characteristics.

The present invention devised to solve the above problems provides a mask for forming a pattern that can prevent spacer collapse connected to the pattern side formed in the scribe line region by forming a cylindrical capacitor in the cell region. Its purpose is to.

1A to 1D are cross-sectional views of a semiconductor device manufacturing process according to the prior art.

2A to 2D are respectively a perspective view, a bottom view, a sectional view, and a plan view of superimposed marks formed on a scribe line in a semiconductor device manufacturing process according to the prior art;

3 is a SEM photograph showing that the polysilicon film forming the sidewalls of the overlap marks formed according to the prior art has been destroyed in a subsequent process;

4A and 4B are conventional mask patterns used when exposing positive photoresist films to form overlap marks, respectively, and mask pattern plan views according to one embodiment of the present invention;

5A to 5D are a perspective view, a bottom view, a sectional view, and a plan view showing an overlap mark formed by using a mask defining an overlap mark pattern according to an embodiment of the present invention.

6A through 6D are cross-sectional views of a semiconductor device manufacturing process in accordance with an embodiment of the present invention.

* Description of the main parts of the drawing

a: Light shielding film pattern b: Area in which no light shielding film pattern is formed

s: sidewall of the overlapping mark pattern g: grid pattern forming the overlapping mark

c: charge storage electrode contact hole 20: semiconductor substrate

21: interlayer insulating film 22, 25: polysilicon film

23: oxide film 24: photosensitive film pattern

22A: charge storage electrode pattern 22B: overlap mark pattern

23A, 23B: oxide film pattern

According to an aspect of the present invention, there is provided a mask for forming a pattern capable of preventing collapse of a spacer connected to a side of a pattern, the mask comprising: a main mask pattern defining the pattern region; And an auxiliary mask pattern formed in a region defined by the main mask pattern to form a plurality of grooves in the pattern.

The present invention is a method for preventing the collapse of the conductive film by forming a pattern capable of supporting the conductive film in the form of side walls in order to prevent the conductive film formed in the side wall form in the large pattern, such as the overlap mark formed on the scribe line.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.

4A and 4B show a mask pattern used when exposing a positive photosensitive film to form an overlap mark, and a mask pattern according to an embodiment of the present invention, respectively. In the prior art, a light shielding film pattern having a rectangular shape is formed in a mask area corresponding to a superimposed mark, and in an embodiment of the present invention, a mask area corresponding to the superimposed mark has a light shielding film so as to have a lattice pattern inside the superimposed mark. It is divided into a region in which the pattern a is formed and a region b in which the light shielding film pattern is not formed.

That is, in the mask pattern for forming an overlap mark according to an embodiment of the present invention, a plurality of light shielding film patterns (a) having a rectangular shape are periodically formed by repeating rows and columns, and thus a light transmitting area between the plurality of light shielding patterns. These are connected to form a plurality of orthogonal rod shapes.

5A to 5D are a perspective view, a bottom view, a sectional view, and a plan view showing overlapping marks formed by using a mask defining an overlapping mark pattern as shown in FIG. 4B, respectively. FIG. 5C is a cross-sectional view taken along the line AA ′ of FIG. 5A. As can be seen in Figures 5a to 5d it can be seen that the conductive film forming the side wall (s) of the overlap mark pattern is connected to the grid pattern (g) forming the overlap mark.

6A through 6D are cross-sectional views illustrating a semiconductor device manufacturing process in accordance with an embodiment of the present invention. A semiconductor device manufacturing method according to an embodiment of the present invention is performed as follows.

First, as shown in FIG. 6A, the interlayer insulating layer 21 is formed on the semiconductor substrate 20 and selectively etched to form the charge storage electrode contact hole c. Then, the inside of the charge storage electrode contact hole c is formed. And a first polysilicon film 22 is deposited on the interlayer insulating film 21, an oxide film 23 is formed, and a photosensitive film pattern 24 is formed. The photoresist pattern 24 defines a charge storage electrode region in a cell region and an overlap mark region in a scribe line. In the present invention, the photoresist pattern 24 ′ defining the overlap mark region includes a plurality of orthogonal bars. Pattern.

Next, as illustrated in FIG. 6B, the oxide layer 23 and the first polysilicon layer 22 are selectively etched using the photoresist patterns 24 and 24 ′ as etch masks to charge the cell region and the scribe line, respectively. The storage electrode pattern 22A and the overlap mark pattern 22B are formed, and the photosensitive film patterns 24 and 24 'are removed. In this case, the same oxide film patterns 23A and 23B as the respective patterns remain on the charge storage electrode pattern 22A and the overlap mark pattern 22B.

Next, as shown in FIG. 6C, the second polysilicon layer 25 is formed on the entire structure, and then etched to form a second polysilicon layer on the side of the charge storage electrode pattern 22A and the side of the overlap mark pattern 22B. The film 25 is left in the form of a side wall. At this time, the polysilicon film 25 remains between the overlap mark pattern 22B and the oxide film pattern 23B formed on the overlap mark pattern 22B. Accordingly, the second polysilicon film 25 remaining in the sidewall shape on the side of the overlap mark 22B pattern is connected to and supported by the first polysilicon film forming the overlap mark pattern 22B, thereby preventing collapse in a subsequent process. have.

Next, as shown in FIG. 6D, the second polysilicon film (in sidewall form) is removed on the side of the charge storage electrode pattern 22A and the overlap mark pattern 22B of the cell region by removing the oxide layer patterns 23A and 23B. 25) is left. At this time, the overlap mark of the scribe line is left in a lattice form, thereby preventing the polysilicon film remaining in the spacer form in the overlap mark pattern of the scribe line from collapsing in a subsequent process.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the technical field of the present invention without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.

According to the present invention, the overlap mark is formed in a lattice form so as to support the polysilicon film protruding in the sidewall shape to the overlap mark pattern of the scribe line so that the polysilicon film forming the sidewall of the scribe line collapses in a subsequent process. It is possible to prevent the deterioration of device characteristics by removing the cause of contamination.

Claims (5)

In the mask for forming a pattern that can prevent the collapse of the spacer connected to the side of the pattern, A main mask pattern defining the pattern area; And And an auxiliary mask pattern formed in an area defined by the main mask pattern to form a plurality of grooves in the pattern. The method of claim 1, The main mask pattern is a light shielding portion, and the auxiliary mask pattern is a light transmitting portion. The method of claim 1, The main mask pattern is a light transmitting portion, and the auxiliary mask pattern is a light transmitting portion. The method according to claim 1 or 2, And a plurality of auxiliary patterns formed by repeating rows and columns. The method according to claim 1 or 2, The auxiliary pattern is a mask forming a grid.