KR19990056602A - Piezoelectric ceramic composition - Google Patents
Piezoelectric ceramic composition Download PDFInfo
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- KR19990056602A KR19990056602A KR1019970076607A KR19970076607A KR19990056602A KR 19990056602 A KR19990056602 A KR 19990056602A KR 1019970076607 A KR1019970076607 A KR 1019970076607A KR 19970076607 A KR19970076607 A KR 19970076607A KR 19990056602 A KR19990056602 A KR 19990056602A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead based oxides
- H10N30/8554—Lead zirconium titanate based
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Abstract
본 발명은 xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (0.05≤x≤0.10mol%, 0.4≤y≤0.5mol%, 0.4≤z≤0.5mol%, 0.3≤k≤1.0wt%, 0.05≤l≤0.20wt%)로 조성된 압전 자기 조성물에 관한 것으로서, 높은 기계적 품질계수(Qm)와 전기기계 결합계수(Kp)를 가지고, 저온에서 소결이 가능하게 하며, 이로 인하여 압전 변압기(Transformer), 액튜에이터, 초음파 진동자 등에 폭넓게 사용될 수 있는 압전 자기 조성물에 관한 것이다.In the present invention, xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (0.05≤x≤0.10mol%, 0.4≤y≤0.5mol%, 0.4≤z≤0.5mol %, 0.3≤k≤1.0wt%, 0.05≤l≤0.20wt%), which has a high mechanical quality factor (Qm) and an electromechanical coupling coefficient (Kp). The present invention relates to a piezoelectric magnetic composition that can be widely used, and thus can be widely used in piezoelectric transformers, actuators, ultrasonic vibrators and the like.
Description
본 발명은 압전 자기 조성물에 관한 것으로서, 압전 변압기에 사용될 수 있는 높은 기계적 품질계수(Qm)와 높은 전기기계결합계수(Kp)를 갖는 압접 자기 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to piezoelectric ceramic compositions, and to piezoelectric ceramic compositions having a high mechanical quality factor (Qm) and a high electromechanical coefficient (Kp) that can be used in piezoelectric transformers.
종래의 압전 자기 조성물로서 티탄산지르콘산납(PZT)이 널리 알려져 있으나 이는 각종 전자제품에 만족되는 제 특성을 완벽히 나타내지 못하였다. 이와 같은 이유로, 티탄산지르콘산납(PZT)의 A site 또는 B site에 여러 가지 원소를 치환하여 특성을 구현하거나, 제 3 성분인 마그네슘네오븀산납(Pb(Mg1/3Nb2/3)O3), 망간네오븀산납(Pb(Mn1/2Nb2/3)O3), 아연네오븀산납(Pb(Zn1/3Nb2/3)O3), 니켈네오븀산납(Pb(Ni1/3Nb2/3)O3)을 첨가시킨 조성물이 사용되었다. 그러나 이들은 공통적으로 소결온도가 높아 적층형 소자를 제작하는 데에는 난점이 있으며, 산화납(PbO)의 휘발로 인하여 안정된 특성의 구현이 어렵다는 문제점이 있다.As a conventional piezoelectric ceramic composition, lead zirconate titanate (PZT) is widely known, but it does not completely exhibit various properties satisfying various electronic products. For this reason, the properties are realized by substituting various elements in the A site or B site of lead zirconate titanate (PZT), or the lead magnesium neobate (Pb (Mg 1/3 Nb 2/3 ) O 3 ) ), Lead Manganese Nebate (Pb (Mn 1/2 Nb 2/3 ) O 3 ), Lead Zinc Nebate (Pb (Zn 1/3 Nb 2/3 ) O 3 ), Lead Nickel Nebate (Pb (Ni A composition with addition of 1/3 Nb 2/3 ) O 3 ) was used. However, since they have a high sintering temperature in common, there is a difficulty in manufacturing a stacked device, and there is a problem that it is difficult to realize stable characteristics due to volatilization of lead oxide (PbO).
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 인출된 것으로서, Pb(Sb2/3W1/3)O3- PbTiO3- PbZrO3+ MnO2로 표시되는 기본 삼성분계식에 산화구리(CuO)를 소량 첨가하여, 높은 기계적 품질계수(Qm)와 전기기계 결합계수(Kp)를 가지고 저온에서 소결이 가능한 압전자기 조성물을 제공하는데 그 목적이 있다.The present invention has been drawn to solve the problems described above, the copper oxide (CuO) in the basic Samsung equation represented by Pb (Sb 2/3 W 1/3 ) O 3 -PbTiO 3 -PbZrO 3 + MnO 2 It is an object to provide a piezoelectric composition which can be sintered at low temperature by adding a small amount) and having a high mechanical quality factor (Qm) and an electromechanical coupling coefficient (Kp).
상기의 기술적 과제를 달성하기 위한 본 발명은 xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (0.05≤x≤0.10mol%, 0.4≤y≤0.5mol%, 0.4≤z≤0.5mol%, 0.3≤k≤1.0wt%, 0.05≤l≤0.20wt%)로 조성된 압전 자기 조성물을 특징으로 한다.The present invention for achieving the above technical problem is xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (0.05≤x≤0.10mol%, 0.4≤y≤0.5mol %, 0.4 ≦ z ≦ 0.5mol%, 0.3 ≦ k ≦ 1.0wt%, 0.05 ≦ l ≦ 0.20wt%).
본 발명의 실시예를 설명하면 다음과 같다.An embodiment of the present invention will be described as follows.
산화납(PbO), 산화지르코늄(ZrO2), 산화티탄(TiO2), Sb2O3, WO3, 산화망간(MnO2), 산화구리(CuO)를 다음의 각각의 실시예의 조성이 되도록 평량하여 습식혼합과 건조과정을 거친 다음 800 ~ 1,000℃에서 2시간 하소시키고 분쇄한다. 분쇄된 재료에 PVA(Poly Vinyl Alcohol)결합제를 첨가한 다음 직경 24㎜, 두께 1.5㎜의 원판형 펠렛(Pellet)으로 성형하여 1000~1100℃에서 2시간 소결 시킨다. 이와 같이 소결된 소체의 양면에 은(Ag) 전극을 형성시키고, 실리콘 오일 중에서 3∼4kV㎜의 직류전압을 10 ~ 30분간 인가한 다음 본 발명이 속하는 기술 분야에서 통상적으로 사용하는 방법으로 각 실시 예의 밀도, 전기기계 결합계수(Kp), 기계적 품질계수(Qm), 정전용량을 각각 측정하여 그 결과를 얻었다. 다음의 <실시예 1>, <실시예 3>에서 알 수 있듯이 상기의 압전자기조성물은 압전변압기에서 요구되는 특성을 만족하므로 적용이 가능하다.Lead oxide (PbO), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), Sb 2 O 3 , WO 3 , manganese oxide (MnO 2 ), and copper oxide (CuO) may be the compositions of the following examples. After weighing, wet mixing and drying process, calcining and grinding at 800 ~ 1,000 ℃ for 2 hours. PVA (Poly Vinyl Alcohol) binder was added to the pulverized material, and then formed into disc pellets having a diameter of 24 mm and a thickness of 1.5 mm, followed by sintering at 1000 to 1100 ° C. for 2 hours. The silver (Ag) electrode is formed on both surfaces of the sintered body as described above, and a direct current voltage of 3 to 4 kV mm is applied for 10 to 30 minutes in silicone oil, and then each method is used in the art. The density, electromechanical coupling factor (Kp), mechanical quality factor (Qm) and capacitance of the examples were measured and the results were obtained. As can be seen in the following <Example 1>, <Example 3>, the piezoelectric composition can be applied because it satisfies the characteristics required in the piezoelectric transformer.
<실시예 1><Example 1>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.05mol%, y=0.45mol%, z=0.50mol%, k=0.50wt%, l=0.05wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1100℃에서 상기의 방법으로 제조한 결과, 밀도는 7.83g/cm3, 전기기계 결합계수(Kp)는 61%, 기계적 품질계수(Qm)는 1350, 유전상수(εr)는 1400인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.05mol%, y = 0.45mol%, z = 0.50mol%, k = 0.50wt%, l = 0.05wt%) and the piezoelectric ceramic composition was prepared by the above method at the sintering temperature of 1100 ℃, the density was 7.83g / cm 3 , the electromechanical coefficient (Kp) 61%, mechanical quality factor ( Qm) is 1350 and dielectric constant (ε r ) is 1400.
<실시예 2><Example 2>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.05mol%, y=0.45mol%, z=0.50mol%, k=0.50wt%, l=0.10wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1100℃에서 상기의 방법으로 제조한 결과, 밀도는 7.69g/cm3, 전기기계 결합계수(Kp)는 58%, 기계적 품질계수(Qm)는 1170, 유전상수(εr)는 1630인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.05mol%, y = 0.45mol%, z = 0.50mol%, k = 0.50wt%, l = 0.10wt%) of the piezoelectric ceramic of the composition to the sintering temperature at 1100 ℃ as a result of manufacture of the above method, density of 7.69g / cm 3, 58% electromechanical coupling factor (Kp), mechanical quality factor by composition ( Qm) is 1170 and dielectric constant (ε r ) is 1630.
<실시예 3><Example 3>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.05mol%, y=0.45mol%, z=0.50mol%, k=0.50wt%, l=0.10wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1050℃에서 상기의 방법으로 제조한 결과, 밀도는 7.79g/cm3, 전기기계 결합계수(Kp)는 62%, 기계적 품질계수(Qm)는 1460, 유전상수(εr)는 1570인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.05mol%, y = 0.45mol%, z = 0.50mol%, k = 0.50wt%, l The piezoelectric ceramic composition composed of = 0.10 wt%) was prepared by the above method at the sintering temperature of 1050 ° C., and the density was 7.79 g / cm 3 , the electromechanical coefficient (Kp) was 62%, and the mechanical quality factor ( Qm) was 1460 and dielectric constant (ε r ) was 1570.
<실시예 4><Example 4>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.05mol%, y=0.45mol%, z=0.50mol%, k=0.50wt%, l=0.20wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1050℃에서 상기의 방법으로 제조한 결과, 밀도는 7.88g/cm3, 전기기계 결합계수(Kp)는 55%, 기계적 품질계수(Qm)는 1390, 유전상수(εr)는 1600인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.05mol%, y = 0.45mol%, z = 0.50mol%, k = 0.50wt%, l = 0.20wt%) of the piezoelectric ceramic at the sintering temperature 1050 ℃ the composition to have the result of producing in the above-described way, and the density was 7.88g / cm 3, 55% electromechanical coupling factor (Kp), mechanical quality factor by composition ( Qm) was 1390 and dielectric constant (ε r ) was 1600.
<실시예 5>Example 5
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.05mol%, y=0.45mol%, z=0.50mol%, k=0.50wt%, l=0.20wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1000℃에서 상기의 방법으로 제조한 결과, 밀도는 7.46g/cm3, 전기기계 결합계수(Kp)는 49%, 기계적 품질계수(Qm)는 970, 유전상수(εr)는 1900인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.05mol%, y = 0.45mol%, z = 0.50mol%, k = 0.50wt%, l The piezoelectric ceramic composition composed of = 0.20 wt%) was prepared by the above method at the sintering temperature of 1000 ° C., and the density was 7.46 g / cm 3 , the electromechanical coefficient (Kp) was 49%, and the mechanical quality factor ( Qm) is 970 and dielectric constant (ε r ) is 1900.
<실시예 6><Example 6>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.10mol%, y=0.45mol%, z=0.45mol%, k=0.50wt%, l=0.05wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1100℃에서 상기의 방법으로 제조한 결과, 밀도는 7.75g/cm3, 전기기계 결합계수(Kp)는 56%, 기계적 품질계수(Qm)는 1330, 유전상수(εr)는 1200인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.10mol%, y = 0.45mol%, z = 0.45mol%, k = 0.50wt%, l = 0.05 wt%), the piezoelectric ceramic composition was prepared by the above method at the sintering temperature of 1100 ° C., and the density was 7.75 g / cm 3 , the electromechanical coefficient (Kp) was 56%, and the mechanical quality factor ( Qm) was 1330 and dielectric constant (ε r ) was 1200.
<실시예 7><Example 7>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.10mol%, y=0.45mol%, z=0.45mol%, k=0.50wt%, l=0.10wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1050℃에서 상기의 방법으로 제조한 결과, 밀도는 7.81g/cm3, 전기기계 결합계수(Kp)는 58%, 기계적 품질계수(Qm)는 1300, 유전상수(εr)는 1470인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.10mol%, y = 0.45mol%, z = 0.45mol%, k = 0.50wt%, l = 0.10wt%) of the piezoelectric ceramic results produced at the sintering temperature 1050 ℃ the composition so as to have in the above-described way, and the density was 7.81g / cm 3, 58% electromechanical coupling factor (Kp), mechanical quality factor by composition ( Qm) is 1300 and dielectric constant (ε r ) is 1470.
<실시예 8><Example 8>
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.10mol%, y=0.45mol%, z=0.45mol%, k=0.50wt%, l=0.15wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1050℃에서 상기의 방법으로 제조한 결과, 밀도는 7.84g/cm3, 전기기계 결합계수(Kp)는 57%, 기계적 품질계수(Qm)는 1290, 유전상수(εr)는 1360인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.10mol%, y = 0.45mol%, z = 0.45mol%, k = 0.50wt%, l = 0.15wt%) of the piezoelectric ceramic at the sintering temperature 1050 ℃ the composition to have the result of producing in the above-described way, and the density was 7.84g / cm 3, 57% electromechanical coupling factor (Kp), mechanical quality factor by composition ( Qm) is 1290 and dielectric constant (ε r ) is 1360.
<실시예 9>Example 9
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2+ lCuO (x=0.10mol%, y=0.45mol%, z=0.45mol%, k=0.50wt%, l=0.20wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1000℃에서 상기의 방법으로 제조한 결과, 밀도는 7.53g/cm3, 전기기계 결합계수(Kp)는 43%, 기계적 품질계수(Qm)는 1600, 유전상수(εr)는 1180인 특성을 나타냈다.xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 + lCuO (x = 0.10mol%, y = 0.45mol%, z = 0.45mol%, k = 0.50wt%, l The piezoelectric ceramic composition composed of 0.20 wt%) was prepared by the above method at the sintering temperature of 1000.degree. C., the density was 7.53 g / cm 3 , the electromechanical coefficient (Kp) was 43%, and the mechanical quality factor ( Qm) is 1600 and dielectric constant (ε r ) is 1180.
<보기예 1>Example 1
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2(x=0.05mol%, y=0.45mol%, z=0.50mol%, k=0.50wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1100℃에서 상기의 방법으로 제조한 결과, 밀도는 7.72g/cm3, 전기기계 결합계수(Kp)는 60%, 기계적 품질계수(Qm)는 1270, 유전상수(εr)는 1240인 특성을 나타냈다xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 (x = 0.05mol%, y = 0.45mol%, z = 0.50mol%, k = 0.50wt%) The piezoelectric ceramic composition was prepared at the sintering temperature of 1100 ° C. by the above method. The density was 7.72g / cm 3 , the electromechanical coefficient (Kp) was 60%, the mechanical quality factor (Qm) was 1270, and the dielectric constant ( ε r ) exhibited a characteristic of 1240
<보기예 2>Example 2
xPb(Sb2/3W1/3)O3- yPbTiO3- zPbZrO3+ kMnO2(x=0.10mol%, y=0.45mol%, z=0.45mol%, k=0.50wt%)로 조성된 압전 자기 조성물을 가지도록 소결온도 1100℃에서 상기의 방법으로 제조한 결과, 밀도는 7.70g/cm3, 전기기계 결합계수(Kp)는 51%, 기계적 품질계수(Qm)는 1200, 유전상수(εr)는 875인 특성을 나타냈다..xPb (Sb 2/3 W 1/3 ) O 3 -yPbTiO 3 -zPbZrO 3 + kMnO 2 (x = 0.10mol%, y = 0.45mol%, z = 0.45mol%, k = 0.50wt%) The piezoelectric ceramic composition was prepared at the sintering temperature of 1100 ° C. by the above method. The density was 7.70 g / cm 3 , the electromechanical coefficient (Kp) was 51%, the mechanical quality factor (Qm) was 1200, and the dielectric constant ( ε r ) exhibited a property of 875.
*비교예는 본실험 외의 것임.* Comparative example is other than the main experiment.
본 발명에 의한 상기 압전자기 조성물은 높은 전기기계 결합계수(Kp)와 기계적 품질계수(Qm)를 갖고 있으며, 저온에서 소결이 가능하기 때문에 압전 변압기(Transformer), 액튜에이터, 초음파 진동자 등의 응용이 가능하다.The piezoelectric composition according to the present invention has a high electromechanical coupling factor (Kp) and a mechanical quality factor (Qm), and can be sintered at low temperatures, thereby enabling applications of piezoelectric transformers, actuators, and ultrasonic vibrators. Do.
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KR1019970076607A KR19990056602A (en) | 1997-12-29 | 1997-12-29 | Piezoelectric ceramic composition |
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KR19990056602A true KR19990056602A (en) | 1999-07-15 |
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KR1019970076607A KR19990056602A (en) | 1997-12-29 | 1997-12-29 | Piezoelectric ceramic composition |
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1997
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