KR19990051970A - Infrared Emitting Layer Formation Method of Silicon Light Emitting Device - Google Patents

Abstract

The present invention relates to a method for forming an infrared light emitting layer of a silicon light emitting device, the object of which is to generate an excessive amount of silicon defects in the silicon oxide film in an appropriate amount and to bond these defects and silicon atoms by heat treatment to a certain amount of ultrafine grain layer The present invention provides a method for forming an infrared light emitting layer of a silicon light emitting device in which desired light emission characteristics in the infrared region are obtained by adjusting the amount of generation of the ultrafine grain layer.

According to an aspect of the present invention, there is provided a method of forming a light emitting layer on a silicon light emitting device, the method comprising: forming a silicon oxide film on a silicon substrate; Controlling the amount of dose to 3 × 10 ¹⁷ / cm ² or more to implant silicon ions into the oxide film; The present invention relates to a method for forming an infrared light emitting layer of a silicon light emitting device, comprising the step of performing heat treatment to bond the point defects obtained by the ion implantation and silicon atoms to form ultrafine silicon crystal grains in an oxide film.

Description

Infrared Emitting Layer Formation Method of Silicon Light Emitting Device

The present invention relates to a method for forming an infrared light emitting layer of a silicon light emitting device, and more particularly to a method for forming a light emitting layer of a silicon light emitting device having a light emitting characteristic of the infrared region.

Recently, research into fabricating an optical device using a semiconductor process has been continued, but there are many problems such as the need for sophisticated crystalline semiconductor ultra thin film growth technology such as a III-V semiconductor substrate and a quantum well structure and a low temperature process. . Further, research on red light emission and the like has been conducted using porous silicon, but the production of porous silicon has a problem in reproducibility and stability of light emitted due to the use of a chemical etching method.

Therefore, in consideration of stable light emission characteristics, mechanical strength, and reproducible production, efforts have been made to obtain light emission characteristics by fabricating ultrafine grains in silica or oxide films. However, for these methods, multiple peaks are detected (Appl. Phys. Lett, 65 (14), 3, 1994, 1814), or gentle peaks are detected (J, Phys.:Condens, Matter 5 (1993) L375- L380) and slight red light has been detected, but a method for obtaining strong infrared rays in a desired area is not known.

Accordingly, the present inventors have repeatedly studied and experimented to obtain a light emitting device emitting strong infrared rays in a desired area, and based on the results, the present invention proposes an excessive amount of silicon defects in a silicon oxide film. And forming a predetermined amount of ultrafine grain layers by combining these defects with silicon atoms by heat treatment, thereby adjusting the amount of generation of the ultrafine grain layers to obtain desired light emission characteristics in the infrared region. It is intended to provide a purpose.

1 (a) to 1 (c) are schematic diagrams showing an example of a step by step for carrying out the light emitting layer forming method according to the present invention.

FIG. 2 is a light emission characteristic curve of the light emitting layer formed by heat treatment by injecting silicon ions into the silicon oxide film.

Explanation of symbols on the main parts of the drawings

1 ..... Silicon Substrate 2 ..... Silicon Oxide

3 ..... Silicon ions 4 ..... Point defects due to silicon ion implantation

5 ..... Ultrafine Silicon Grain Formed by Heat Treatment

According to an aspect of the present invention, there is provided a method of forming a light emitting layer on a silicon light emitting device, the method comprising: forming a silicon oxide film on a silicon substrate; Controlling the amount of dose to 3 × 10 ¹⁷ / cm ² or more to implant silicon ions into the oxide film; And a heat treatment to bond the point defects obtained by the ion implantation and the silicon atoms to form ultrafine silicon crystal grains in the oxide film.

Hereinafter, a method for performing an infrared light emitting layer forming method of a silicon light emitting device according to the present invention will be described with reference to FIG.

1 (a) to 1 (c) are schematic diagrams showing an example of a step by step for carrying out the method for forming a light emitting layer for a silicon light emitting device according to the present invention.

The method for forming a light emitting layer for a silicon light emitting device according to the present invention comprises the steps of forming a silicon oxide film (2) on the silicon substrate (1), and in order to excessively generate a point defect (4) inside the oxide film (2) Ion implantation, and a heat treatment step in which the point defect 4 and the silicon atoms combine to form the ultrafine silicon crystal grains 5 in the oxide film 2.

The formation of the oxide film is not particularly limited, and a method such as a wet oxidation method can be applied, and the ions to be implanted can be any ions capable of generating excessive point defects. Silicon ion implantation of the second step can be obtained a strong infrared light at a dose of 3 × 10 ¹⁷ / cm ² or more, the heat treatment of the third step can use a conventional electric furnace heating method. In addition, the heat treatment is effective to perform the heat treatment for more than 12 hours.

That is, as a method for forming a light emitting layer for a silicon light emitting element for obtaining infrared light according to the present invention, first, as shown in Fig. 1A, an oxide film 2 by SiO ₂ in a conventional method on the silicon substrate 1 To form.

Next, as shown in FIG. 1B, the silicon oxide film is formed by excessively generating a point defect 4 in the oxide film by using Si ions 3 in the oxide film, and then heat treatment in a nitrogen atmosphere as shown in FIG. 1C. Internal point defects and ion implanted silicon atoms are mutually absorbed and grown to form a crystal grain layer 5 of ultrafine silicon single crystal phase.

Although a p-type silicon substrate is used in FIG. 1 and boron (B) is used as an impurity, the present invention is not limited thereto.

Hereinafter, the present invention will be described in more detail with reference to Examples.

Example

After a SiO ₂ oxide film was formed on a silicon substrate having a p-type (100) direction and a resistivity of 7-15 μm cm, the dose amount was 5 × 10 ¹⁶ / cm ² , 1 × 10 ¹⁷ / cm ² , at an acceleration voltage of 200 KeV on the oxide film. Silicon ions were implanted at 3 × 10 ¹⁷ / cm ² by ion implantation. At this time, excess point defects are generated in the oxide film.

After the ion implantation, the sample is heat-treated by a conventional heat treatment method, so that excess point defects are absorbed and grown in the oxide film to form ultra-fine grains, which act as a light emitting source.

FIG. 2 shows a photoluminescence (PL) characteristic curve of a sample subjected to ion implantation with a dose of 5 × 10 ¹⁶ / cm ² and then heat-treated in a nitrogen atmosphere at 1100 ° C. for 12 hours. Irrespective of the heat treatment time, the emission peak was observed in the red emission region of 7400 Hz, and when the dose was increased to 1 × 10 ¹⁷ / cm ² , the emission peak was observed in the red emission region of 7400 Hz and the infrared region of 8500 Hz. . Again, when the dose increased further to 3 × 10 ¹⁷ / cm ² , the peak appeared in the infrared region around 8200 며 and the peak in the red region decreased relatively. This means that the wavelength of light emitted is changed by the amount of dose injected, and in order to obtain infrared rays, light of a desired infrared wavelength can be obtained when silicon ions are injected into the oxide film at an amount of 3 × 10 ¹⁷ / cm ² or more. it means.

According to the present invention as described above, the infrared light emission characteristics can be obtained by excessively generating silicon defects in the silicon oxide film and by bonding these defects and silicon atoms by heat treatment to form an ultrafine grain layer.

Claims (3)

In the method of forming a light emitting layer on a silicon light emitting device, Forming a silicon oxide film 2 on the silicon substrate 1; Controlling the amount of dose to 3 × 10 ¹⁷ / cm ² or more to implant silicon ions 3 into the oxide film 2; And And heat treatment to bond the point defects (4) obtained by the ion implantation and the silicon atoms to form the ultrafine silicon crystal grains (5) in the oxide film (2). The method of claim 1, Forming the oxide film is a method of forming an infrared light emitting layer of a silicon light emitting device, characterized in that the wet oxidation method. The method of claim 1, The heat treatment is an infrared light emitting layer forming method of the silicon light emitting device, characterized in that the electric furnace heating method.