KR19990039151A - Dielectric Composition of Ceramic Capacitor and Manufacturing Method Thereof - Google Patents
Dielectric Composition of Ceramic Capacitor and Manufacturing Method Thereof Download PDFInfo
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- KR19990039151A KR19990039151A KR1019970059134A KR19970059134A KR19990039151A KR 19990039151 A KR19990039151 A KR 19990039151A KR 1019970059134 A KR1019970059134 A KR 1019970059134A KR 19970059134 A KR19970059134 A KR 19970059134A KR 19990039151 A KR19990039151 A KR 19990039151A
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 21
- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 10
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims abstract description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000010298 pulverizing process Methods 0.000 claims description 3
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000009837 dry grinding Methods 0.000 claims 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 229910000484 niobium oxide Inorganic materials 0.000 abstract description 3
- 230000008676 import Effects 0.000 abstract description 2
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 1
- -1 Bismuth oxide Tantalum oxide Lanthanum oxide Chemical compound 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- ZOTKGJBKKKVBJZ-UHFFFAOYSA-L cobalt(2+);carbonate Chemical compound [Co+2].[O-]C([O-])=O ZOTKGJBKKKVBJZ-UHFFFAOYSA-L 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/04—Drying; Impregnating
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
본 발명은 세라믹 콘덴서의 유전체 조성물 및 그 제조방법에 관한 것으로서, 티탄산바륨(BaTiO3), 산화비스무스(Bi2O3), 산화탄탈륨(Ta2O5), 산화란탄(La2O3)을 주성분으로 하고 여기에 산화니오븀 등의 부성분을 첨가하여 일정온도에서 소성하여 제조된 것으로, 이는 온도특성을 개선하고 유전율 및 누설전류특성을 향상시켜 지금까지 전량 수입되고 있는 Y5P 온도특성을 갖고, 유전율이 3,000 이상인 전기특성을 갖는 세라믹 콘덴서의 유전체 조성물에 대한 수입대체 효과를 얻을 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric composition of a ceramic capacitor and a method of manufacturing the same, and includes barium titanate (BaTiO 3 ), bismuth oxide (Bi 2 O 3 ), tantalum oxide (Ta 2 O 5 ), and lanthanum oxide (La 2 O 3 ). It is manufactured by sintering at a constant temperature by adding a main component and subsidiary elements such as niobium oxide, and it has the Y5P temperature characteristic, which has been imported all the way up to improve the temperature characteristics and improve the dielectric constant and leakage current characteristics. The import substitution effect on the dielectric composition of the ceramic capacitor having electrical characteristics of 3,000 or more can be obtained.
Description
본 발명은 세라믹 콘덴서의 유전체 조성물 및 그 제조방법에 관한 것으로서, 더욱 상세하게는 유전율, 온도특성 및 유전손실계수 등의 전기적 성능이 우수한 세라믹 콘덴서를 구성하는 유전체 조성물과 이를 제조하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric composition of a ceramic capacitor and a method of manufacturing the same, and more particularly, to a dielectric composition constituting a ceramic capacitor having excellent electrical performance such as dielectric constant, temperature characteristic, and dielectric loss factor, and a method of manufacturing the same.
세라믹 콘덴서는 비유전율(比誘電率)이 큰 산화티탄의 자기를 유전체에 사용한 콘덴서이다.Ceramic capacitors are capacitors in which a magnet of titanium oxide having a large relative dielectric constant is used for a dielectric.
외형은 원반에 2개의 리드선이 한 방향으로 나와있는 형태이며, 내부는 자기원반을 사이에 두고 은(銀) 전극이 마주보고 있다.The outer shape is a form in which two lead wires are shown in one direction on a disk, and the inside of the disk faces a silver electrode with a magnetic disk interposed therebetween.
따라서, 세라믹 콘덴서는 매우 높은 주파수까지 사용할 수 있다.Thus, ceramic capacitors can be used up to very high frequencies.
소형에 비해서 용량이 크며 1pF에서 1.5μF 정도의 범위의 것이 만들어지고 있다. 정격 사용전압은 25V에서 500V 정도이다.Compared to the small size, the capacity is large and the range of 1pF to 1.5μF is being made. The rated operating voltage is about 25V to 500V.
고유전율의 티탄산바륨을 유전체에 사용하고 있는 세미콘은 온도변화에 의해서 유전율이 변하고 용량변화를 일으키는 결점이 있다.Semicone, which uses high dielectric constant barium titanate for dielectrics, has the drawback of changing its dielectric constant and changing its capacity due to temperature changes.
일반적으로 세라믹 콘덴서는 유전율이 높은 티탄산바륨을 주성분으로 하고, 여기에 지르콘산바륨(BaZrO3), 탄산망간(MnCO3), 탄산코발트(CoCO3), 산화세륨(CeO2) 등과 같은 첨가물을 혼합하여 유전체 세라믹을 소성하여 제조되는 콘덴서 종류의 하나이다.Typically, the ceramic capacitor is composed mainly of barium titanate high dielectric constant, and zirconate, barium here (BaZrO 3), mixed with additives such as manganese carbonate (MnCO 3), cobalt carbonate (CoCO 3), cerium oxide (CeO 2) It is one kind of capacitor manufactured by firing dielectric ceramic.
또한, 고유전율계 세라믹 콘덴서용 유전체 조성물로 티탄산바륨을 주성분으로 하고, 여기에 지르콘산칼슘(CaZrO3) 또는 안티몬산칼슘(CaSnO3)을 첨가한 복합세라믹 유전체도 널리 사용되어 왔다.In addition, a composite ceramic dielectric having barium titanate as a main component and added calcium zirconate (CaZrO 3 ) or calcium antimonate (CaSnO 3 ) as a dielectric composition for high dielectric constant ceramic capacitors has also been widely used.
한편, 산화티탄 계통의 세미콘은 산화티탄의 조성을 임의로 선정함으로써 플러스나 마이너스의 온도계수가 얻어지므로 온도변화에 의한 용량변화를 반대로 유리하게 이용함으로써 온도보상용 콘덴서로서 이용된다.On the other hand, the titanium oxide-based semicon is used as a temperature compensation capacitor by advantageously utilizing the capacity change due to the temperature change because the temperature coefficient of plus or minus is obtained by arbitrarily selecting the composition of the titanium oxide.
일반적으로 온도보상용 콘덴서는 산화티타늄을 주성분으로 하는 세라믹 유전체를 1200℃ 이상의 고온에서 소성한 후 전극을 도포하여 제조되는 것으로, 이는 전자기기의 공진회로나 품질계수(Q)값이 높고 온도에 대하여 정전용량의 안정성이 중요한 회로에 사용되어 진다.In general, the temperature compensation capacitor is manufactured by firing a ceramic dielectric composed mainly of titanium oxide at a high temperature of 1200 ° C. or higher, and then applying an electrode, which has a high resonant circuit or quality factor (Q) value of an electronic device and a blackout against temperature. Capacitive stability is used in critical circuits.
즉, 이러한 온도보상용 자기콘덴서는 자기 유전체에 온도를 변화시키면 정전 용량도 따라서 변화하게 되는데, 이때 변화되는 양을 계수로 표기하며 콘덴서의 정전용량과 인덕터(inductor)가 서로 조합되어 IC 공진회로의 주파수가 온도에 따라 변화되지 않도록 보상해 주는 역할을 하게 된다.That is, the temperature compensation magnetic capacitor changes the capacitance according to the change in the temperature of the magnetic dielectric. In this case, the amount of change is expressed as a coefficient and the capacitance of the capacitor and the inductor are combined with each other. It compensates for the frequency not changing with temperature.
현재 국내 세라믹 콘덴서 제조업체에서 생산되고 있는 유전체 중 유전율이 3,000 이상이고, Y5P의 온도특성과 유전손실계수(tanδ)의 값이 2.5% 이하인 전기적 성능을 만족하는 유전체 원료는 일본 등에서 전량 수입되고 있다.Currently, dielectric materials satisfying the electrical performance of the dielectric constant of 3,000 or more and the Y5P temperature characteristic and the dielectric loss coefficient (tanδ) of 2.5% or less are produced in Japan.
여기서, Y5P 온도특성이란 -25∼85℃의 온도범위에서 20℃기준으로 +10%, -10% 이하의 용량변화 범위를 만족하는 JIS규격을 의미한다.Here, the Y5P temperature characteristic means a JIS standard that satisfies a capacity change range of + 10% and -10% or less based on 20 ° C in a temperature range of -25 to 85 ° C.
본 발명은 상기와 같이 전량 수입에 의존하고 있는 세라믹 콘덴서용 자기 유전체 조성물을 유전율 3,000 이상이고, Y5P의 온도특성을 갖는 전기적 성능을 만족하도록 조성하여 이를 국산화하는 동시에 국내외적으로 경쟁력 우위를 확보할 수 있도록 한 세라믹 콘덴서의 유전체 조성물과 이를 제조하는 방법을 제공하는 데 그 목적이 있다.According to the present invention, the magnetic dielectric composition for ceramic capacitors, which is dependent on the total amount of imports as described above, has a dielectric constant of 3,000 or more, and is formulated to satisfy electrical performance having a temperature characteristic of Y5P. The purpose is to provide a dielectric composition of a ceramic capacitor and a method of manufacturing the same.
상기와 같은 목적을 달성하기 위한 본 발명의 세라믹 콘덴서의 유전체 조성물은 티탄산바륨(BaTiO3) 97∼99 몰%, 산화비스무스(Bi2O3) 0.01∼3 몰% 및 산화탄탈륨(Ta2O5) 0.01∼3 몰% 및 산화란탄 0.01∼3 몰%로 이루어진 주성분 100중량부와, 산화니오븀(Nb2O5), 산화코발트(CoO), 산화사마륨(Sm2O3), 산화실리콘(SiO2), 산화알루미늄(Al2O3), 산화니켈(NiO), 산화안티몬(Sb2O3), 산화아연(ZnO) 및 산화납(PbO) 중에서 선택된 1종 이상의 화합물 0.01∼7 중량부로 이루어진 데 그 특징이 있다.The dielectric composition of the ceramic capacitor of the present invention for achieving the above object is 97 to 99 mol% barium titanate (BaTiO 3 ), 0.01 to 3 mol% bismuth oxide (Bi 2 O 3 ) and tantalum oxide (Ta 2 O 5 ) 100 parts by weight of a main component consisting of 0.01 to 3 mol% and lanthanum oxide to 0.01 to 3 mol%, niobium oxide (Nb 2 O 5 ), cobalt oxide (CoO), samarium oxide (Sm 2 O 3 ), and silicon oxide (SiO). 2 ), 0.01 to 7 parts by weight of at least one compound selected from aluminum oxide (Al 2 O 3 ), nickel oxide (NiO), antimony oxide (Sb 2 O 3 ), zinc oxide (ZnO) and lead oxide (PbO) It has its features.
또한, 상기 세라믹 콘덴서용 유전체 조성물을 습식혼합하고 건조 분쇄하는 공정, 1160∼1200 ℃로 가소하는 공정, 가소된 유전체를 미분쇄하고 건조한 다음 바인더를 첨가하여 미분말로 제조하는 공정, 일축압출성형하여 성형체를 제조하는 공정, 1370∼1390℃로 2∼4시간 동안 소성하는 공정을 포함하는 세라믹 콘덴서 유전체의 제조방법에도 그 특징이 있다.In addition, the step of wet mixing and drying and pulverizing the dielectric composition for ceramic capacitors, calcining at 1160 ~ 1200 ℃, finely pulverized and dried the calcined dielectric, and then adding a binder to prepare a fine powder, a uniaxial extrusion molding molded body The manufacturing method of the ceramic capacitor dielectric material which includes the process of manufacturing the process, and baking for 2 to 4 hours at 1370-1390 degreeC also has the characteristics.
이와같은 본 발명을 더욱 상세하게 설명하면 다음과 같다.The present invention will be described in more detail as follows.
본 발명에 따른 세라믹 콘덴서의 조성물에 있어서 주성분은 통상의 세라믹 콘덴서에서와 같이 티탄산바륨인 바, 그 함량은 전체 세라믹 콘덴서의 유전체 조성물 중 97∼99 몰%인 것이 바람직하다.In the composition of the ceramic capacitor according to the present invention, the main component is barium titanate as in a conventional ceramic capacitor, and the content thereof is preferably 97 to 99 mol% in the dielectric composition of all ceramic capacitors.
만일, 티탄산바륨의 함량이 상기 범위를 벗어나면 유전율이 저하하거나 온도특성이 벗어나는 문제가 있다.If the content of barium titanate is outside the above range, there is a problem that the dielectric constant is lowered or the temperature characteristic is deteriorated.
여기에, 산화비스무스 0.01∼3 몰%를 첨가하는 바, 이는 온도특성을 개선하기 위해 첨가된다.Here, 0.01-3 mol% of bismuth oxide is added, which is added to improve the temperature characteristic.
만일, 그 함량이 0.01 몰% 미만이면 첨가효과가 미미하고, 3 몰%를 초과하여 첨가하면 유전율이 감소하는 문제가 있다.If the content is less than 0.01 mol%, the addition effect is insignificant, and if more than 3 mol% is added, there is a problem that the dielectric constant decreases.
그리고, 산화탄탈륨은 유전율을 향상시키는 역할을 하는 것으로서, 그 함량은 주성분 중 0.01∼3 몰%인 것이 바람직하다.And tantalum oxide plays a role of improving the dielectric constant, and the content thereof is preferably 0.01 to 3 mol% in the main component.
만일, 산화탄탈륨의 함량이 상기 범위를 벗어나면 유전율이 떨어지는 TC(Curie temperature)점이 상온을 벗어나 온도특성에 악형향을 미치며 소결밀도가 떨어져 조직이 치밀하지 못한 문제가 발생된다.If the content of tantalum oxide is out of the above range, a TC (Curie temperature) point having a low dielectric constant leaves the room temperature, adversely affects the temperature characteristics, and the sintered density is low, resulting in a problem in that the structure is not dense.
또한, 본 발명에서 산화란탄을 첨가하여 유전율 및 누설전류 특성을 개선하는 바, 그 함량은 주성분 중 0.01∼3 몰%이다.In addition, the present invention improves the dielectric constant and leakage current characteristics by adding lanthanum oxide, the content of which is 0.01 to 3 mol% of the main component.
만일, 산화란탄의 함량이 상기 범위를 벗어나면 유전율이 3mol% 이상 증가하는 문제가 있다.If the content of lanthanum oxide is out of the above range, there is a problem that the dielectric constant is increased by 3 mol% or more.
한편, 본 발명에서는 상기와 같은 주성분 외에도 산화니오븀(Nb2O5), 산화코발트(CoO), 산화사마륨(Sm2O3), 산화실리콘(SiO2), 산화알루미늄(Al2O3), 산화니켈(NiO), 산화안티몬(Sb2O3), 산화아연(ZnO) 및 산화납(PbO) 중에서 1종 이상을 선택하여 주성분 100 중량부에 대하여 0.01∼7 중량부 되도록 첨가하여 온도특성, 유전율 및 누설전류 특성을 개선시킨다.Meanwhile, in the present invention, in addition to the above main components, niobium oxide (Nb 2 O 5 ), cobalt oxide (CoO), samarium oxide (Sm 2 O 3 ), silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), Select one or more of nickel oxide (NiO), antimony oxide (Sb 2 O 3 ), zinc oxide (ZnO) and lead oxide (PbO) and add 0.01 to 7 parts by weight based on 100 parts by weight of the main component Improve the dielectric constant and leakage current characteristics.
바람직하기로는 상기 부성분 중 산화니오븀, 산화코발트 또는 산화납이고, 더욱 바람직하기로는 산화코발트이다.Preferably they are niobium oxide, cobalt oxide, or lead oxide among the said subcomponents, More preferably, they are cobalt oxide.
만일, 부성분의 함량이 상기 범위를 벗어나는 경우 소결온도, 유전율 및 유전손실계수 등의 향상이 어렵다.If the content of the minor component is out of the above range, it is difficult to improve the sintering temperature, dielectric constant and dielectric loss coefficient.
이와같은 유전체 조성물을 통해 유전체를 제조하는 방법은 상기와 같은 유전체 조성물을 습식혼합하고 건조 분쇄하고, 이를 1160∼1200 ℃로 가소한다.The method for producing a dielectric through such a dielectric composition wet mixes and dry pulverizes such a dielectric composition and calcines it to 1160 to 1200 ° C.
가소된 유전체를 미분쇄하고 건조한 다음 바인더를 첨가하여 미분말로 제조하는 공정, 일축압출성형하여 성형체를 제조하고, 이를 1370∼1390℃로 2∼4시간 동안 소성하면 본 발명에 따른 유전체를 제조할 수 있다.A process of preparing a fine powder by pulverizing and drying the calcined dielectric, and then adding a binder to produce a molded body by uniaxial extrusion molding, and then firing it at 1370 to 1390 ° C. for 2 to 4 hours to prepare the dielectric according to the present invention. have.
이하, 본 발명을 실시예에 의거하여 상세히 설명하면 다음과 같은 바, 본 발명이 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to the following Examples, but the present invention is not limited by the Examples.
실시예 1∼7 및 비교예 1∼19Examples 1-7 and Comparative Examples 1-19
다음 표 1에 나타낸 바와 같은 세라믹 콘덴서의 유전체 조성물을 볼밀에 넣어 습식혼합하였다. 그 다음 건조분쇄하고, 1170℃에서 가소한 다음 가소된 유전체를 미분쇄 및 건조한 다음, 바인더를 1.5 중량% 첨가하여 미분말로 제조하였다.Next, the dielectric composition of the ceramic capacitor as shown in Table 1 was placed in a ball mill and wet mixed. Then, it was dried pulverized, calcined at 1170 ° C., and then the pulverized dielectric was pulverized and dried, and 1.5 wt% of the binder was added to prepare a fine powder.
분말을 직경 15Φ의 원통형 금형에 넣고 1ton/㎠ 압력으로 일축압출성형하여 두께 2.05mm로 성형하고 이를 1380℃로 3시간 소성하고 양면에 은(Ag) 페이스트를 도포하여 전기적 특성을 측정하였으며, 그 결과를 표 2에 나타었다.The powder was put into a cylindrical mold having a diameter of 15Φ and uniaxially extruded at 1ton / ㎠ pressure to form a thickness of 2.05mm, fired at 1380 ° C for 3 hours, and coated with silver paste on both sides to measure electrical properties. Is shown in Table 2.
상기 표 2의 결과로부터 본 발명의 함량범위를 만족하면서 티탄산바륨을 비롯하여 산화비스무스, 산화탄탈륨 및 산화란탄을 주성분으로 하고, 여기에 산화니오븀 등의 부성분을 첨가하여 제조된 유전체는 Y5P의 온도특성에 적합하고 유전율이 3,000 이상이며, 유전손실계수가 2.5%이하인 전기적 특성을 만족하는 반면, 부성분의 조성이 다르거나 함량 범위를 벗어나는 경우 유전율이 3,000 미만이고 Y5P의 온도특성에 위배됨을 알 수 있다.From the results of Table 2 above, the dielectric material prepared by adding barium titanate, bismuth oxide, tantalum oxide and lanthanum oxide as main components, and adding a subcomponent such as niobium oxide to the temperature characteristics of Y5P was satisfied. While suitable, the dielectric constant is more than 3,000, and the dielectric loss coefficient satisfies the electrical characteristics of 2.5% or less, it can be seen that the dielectric constant is less than 3,000 and violates the temperature characteristic of Y5P when the composition of the subcomponents is different or out of the content range.
이상에서 상세히 설명한 바와 같이, 본 발명에 따른 세라믹 콘덴서의 유전체 조성물은 지금까지 전량 수입되고 있는 Y5P 온도 특성과 유전손실계수 등의 전기적 성능을 만족하는 유전체 원료를 대체할 수 있어 원가를 절감할 수 있고, 나아가서는 국제 경쟁력 강화 등의 효과를 얻을 수 있다.As described in detail above, the dielectric composition of the ceramic capacitor according to the present invention can replace the dielectric material that satisfies the electrical performance such as the Y5P temperature characteristics and the dielectric loss factor, which are imported all the way up, thereby reducing the cost In addition, it can achieve the effect of strengthening international competitiveness.
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| KR20190111331A (en) * | 2018-03-22 | 2019-10-02 | 주식회사 베이스 | Manufacturing method of dielectric composition for multilayer ceramic condenser |
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| KR20190111331A (en) * | 2018-03-22 | 2019-10-02 | 주식회사 베이스 | Manufacturing method of dielectric composition for multilayer ceramic condenser |
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