KR19990016630A - Light Emitting Diode Having Silicon Substrate and Manufacturing Method Thereof - Google Patents

Abstract

PURPOSE: To provide a light emitting device having a silicon base layer capable of suppressing the occurrence of electron leakage by improving the interfacial properties between a P-type silicon and a transparent conductive film or a metal film and a method of manufacturing the same.

Composition: A P-type silicon pore layer and an N-type silicon pore layer formed by doping and anodizing one surface of a P-type silicon wafer having one electrode layer formed by aluminum deposition on the bottom thereof are sequentially stacked, and the N-type silicon A conductive film is laminated on the upper surface of the pore layer via an N ⁺ -a-Si layer, which is doped with an N-type on one side of a P-type silicon wafer, on which an aluminum film is deposited, and then anodized to form a P-type silicon pore. The layer and the N-type silicon pore layer are sequentially stacked, and a-Si is deposited by PECVD and then densely doped by in-situ doping so that the N ⁺ -a-Si layer on the film is laminated. It is included.

Effect: In the present invention, current leakage does not occur because the n-type silicon pore layer and the conductive film are not directly contacted by the n ⁺ -a-Si layer.

Description

Light Emitting Diode Having Silicon Substrate and Manufacturing Method Thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device having a silicon base layer and a method of manufacturing the same, in which current leakage is not generated through an interface between the silicon wafer and the surface layer.

A light emitting device having a silicon base layer emits visible light when an external power source is applied, and utilizes a phenomenon in which energy stored in free electrons is transformed into other forms of energy when holes and electrons are recombined near a PN junction. To emit in the form of photons.

Generally, arsenic gallium phosphide (GaAsP) or gallium phosphide (GaP) is mainly used as a material for generating photons in a light emitting device.

In the photoelectric switching and display device having the silicon pore layer disclosed in U.S. Patent No. 5,272,355, the interface defect is current at the interface between the silicon pore layer and the metal or transparent conductive film because the silicon pore layer is in direct contact with the metal or the transparent conductive film. There is a high possibility of being leaked. Since the current leak acts in a direction that reduces the scanning efficiency of electrons, when this occurs, the luminous efficiency is lowered.

An object of the present invention is to improve the interfacial properties between P-type silicon and the transparent conductive film or metal film to suppress the generation of electron leaks, so that the scanning of electrons is good, so that the light emitting device having a silicon base layer can be improved. To provide a method of manufacturing.

The light emitting device of the present invention which implements the above object is a P-type silicon pore layer and an N-type silicon pore layer formed by doping and anodizing one side of P-type silicon having an electrode layer formed on aluminum underneath on an underside thereof. This sequential lamination is formed, and a conductive film is laminated on the upper surface of the N-type silicon pore layer via an N ⁺ -a-Si layer (amorphous silicon layer doped with N-type impurities).

The light emitting device is a process of annealing a PN bonded wafer in which one surface of a P-type silicon wafer having an aluminum film deposited on its bottom surface is doped with an N-type so that a P-type silicon pore layer and an N-type silicon pore layer are sequentially formed. While depositing a-Si on the upper surface of the N-type silicon pore layer by PECVD method, the N ⁺ -a-Si layer on the film is laminated by high density doping in accordance with IN-SITU doping method in the process. And a method of depositing a transparent conductive film or a metal film thereon again.

According to the present invention having such a structure, the transparent conductive film or the metal film does not come into direct contact with the N-type silicon pore layer by the N ⁺ -a-Si layer interposed in the form of a film, so that there is no fear of current leakage.

1 is a tomogram showing the structure of a light emitting device according to the present invention;

2 is a process chart showing a manufacturing process of a light emitting device according to the present invention;

3 is a tomographic view for explaining a site where a defect occurs in a conventional light emitting device.

* Explanation of symbols for main parts of the drawings

2: transparent conductive film or metal film, 4: P-type silicon wafer, 6: aluminum film, 8: P-type silicon pore layer, 10: N-type silicon pore layer, 12: n ⁺ -a-Si layer

The present invention having the above-described configuration will be described in detail as a preferred embodiment according to the accompanying drawings.

Fig. 1 is a tom diagram showing the structure of a light emitting device according to the present invention, in which a transparent conductive film or a metal film 2 opens an electrical passage together with an aluminum layer 6 formed on the bottom surface of a P-type silicon wafer 4. The P-type silicon pore layer 8 and the N-type silicon pore layer 10 are sequentially stacked on the upper surface of the P-type silicon wafer 4, and then the a-Si layer (amorphous silicon) is formed thereon. Layer), a film-like N ⁺ -a-Si layer 12 is laminated and interposed between the transparent conductive film or the metal deposition film 2 as a relay.

The light emitting device of the present invention as described above is manufactured through the following method.

As shown in FIG. 2, an aluminum film 6 is deposited on the bottom surface of the P-type silicon wafer 4, and the N-type doped P-type silicon layer 8 on the opposite side is n-doped. A step of obtaining a laminated PN bonded silicon wafer, and anodizing the obtained PN bonded silicon wafer so that the P-type silicon layer 8 and the N-type silicon layer 10 are each made of a P-type silicon pore layer 8 and While a-Si is deposited on the upper surface of the N-type silicon pore layer 10 by PECVD, in-situ doping is performed in a high density so that the N ⁺ -a-Si layer 12 on the film is laminated. And a step of depositing a transparent conductive film or metal film thereon to obtain a light emitting device having a silicon base layer having a single layer structure shown in FIG.

In the anodizing process, an N-diffusion type P-type silicon wafer is used as an anode to be immersed in an electrolyte solution containing hydrofluoric acid (HF), and the silicon wafer is irradiated with visible light of a tungsten lamp while applying DC power to the two electrodes. It is done by the method.

At this time, the hydrofluoric acid containing the electrolyte is ionized and fluorine generated at the anode is combined with silicon forming the N-diffusion layer and the P-type silicon wafer to form a molecule (SiF ₄ ). The reaction formula is as follows.

Si + 4HF SiF ₄ + 4H

The molecules thus formed are dissolved in the electrolyte while forming pores in the silicon wafer used as the anode, and as a result, an N-type silicon pore layer 10 is formed in the N-diffusion layer, and P is formed at an interface between the N-diffusion layer and the P-type silicon wafer. The type silicon pore layer 8 is formed.

In addition, in the lamination process of the N ⁺ -a-Si layer 12, the temperature of the silicon wafer 4 should be maintained at 150 to 300 ℃, this condition is impossible to doping when the temperature is less than 150 ℃ and exceeds 300 ℃ The pore layer is then destroyed and must be observed.

The in-situ doping method is a technique applied when forming a semiconductor layer and a contact layer in the method of manufacturing a thin film transistor, and the in-situ doping method performed in the present invention is also performed without any significant difference from the conventional method.

As described above, the light emitting device having the silicon substrate provided through the present invention is an N ⁺ -a-Si layer is interposed between the N-type silicon pore layer and the metal film or the transparent conductive film, so that even if there is an interface defect in the interface state, the current leaks. As a result, the scanning efficiency of electrons is kept constant, which has the effect of exhibiting uniform luminous efficiency.

Claims (3)

P-type silicon pore layer and N-type silicon pore layer are sequentially formed on the top surface of P-type silicon having an electrode layer formed by aluminum deposition on the bottom, and an N ⁺ -a-Si layer on the film is formed on the top surface of the N-type silicon pore layer. The light emitting device having a silicon base layer having a structure in which the vapor deposition and the conductive film is laminated to form the laminated between the N-type silicon pore layer. Anodizing a PN bonded wafer in which one surface of an P-type silicon wafer having an aluminum film deposited on its bottom surface is doped with an N-type to sequentially form a P-type silicon pore layer and an N-type silicon pore layer, and the N-type silicon While depositing a-Si on the top surface of the pore layer by PECVD, in the process, high density doping is performed according to the IN-SITU doping method so that the N ⁺ -a-Si layer on the film is laminated. A method of manufacturing a light emitting device having a silicon base layer which is carried out by depositing a transparent conductive film or a metal film thereon. The method of manufacturing a light emitting device having a silicon base layer according to claim 2, wherein the deposition of the a-Si by PECVD is performed by controlling a substrate temperature in a range of 150 to 300 ° C.