KR19990012742U - Gas discharge device for semiconductor plasma chemical vapor deposition equipment - Google Patents
Gas discharge device for semiconductor plasma chemical vapor deposition equipment Download PDFInfo
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- KR19990012742U KR19990012742U KR2019970025869U KR19970025869U KR19990012742U KR 19990012742 U KR19990012742 U KR 19990012742U KR 2019970025869 U KR2019970025869 U KR 2019970025869U KR 19970025869 U KR19970025869 U KR 19970025869U KR 19990012742 U KR19990012742 U KR 19990012742U
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Abstract
본 고안은 반도체 플라즈마 화학기상증착장비의 가스배출장치에 관한 것으로, 종래에는 양방향 펌핑식이나 또는 단방향 펌핑식이 주로 사용되어 왔으나, 실제 가스의 흐름이 펌핑포트측으로 집중되어 가스의 밀도가 높아지는 반면, 그 이외의 부위에는 가스의 밀도가 낮아져 결국 웨이퍼에 플라즈마가 불균일하게 증착되어 웨이퍼 불량이 초래되는 문제점이 있었던 바, 본 고안에서는 공정챔버내로 주입된 가스를 펌핑하여 가스흐름을 형성시킴과 동시에 알에프를 인가하여 발생된 플라즈마가 웨이퍼에 증착되도록 하는 반도체의 플라즈마 화학기상증착장비에 있어서, 상기 공정챔버로부터 가스를 펌핑하기 위한 소정의 펌프가 장착되는 메인튜브와, 그 메인튜브의 단부에서 분관되어 상기 웨이퍼의 방사상 위치에 펌핑포트가 배치되는 서브튜브를 포함하여 구성함으로써, 상기 공정챔버내의 가스가 웨이퍼의 전역에 걸쳐 골고루 분산 증착되도록 가스흐름을 균일하게 할 수 있는 효과가 있다.The present invention relates to a gas discharge device of a semiconductor plasma chemical vapor deposition equipment, conventionally two-way pumping or one-way pumping has been mainly used, the actual gas flow is concentrated to the pumping port side, while the density of the gas increases, In other parts, there was a problem that the density of the gas was lowered and plasma was unevenly deposited on the wafer, resulting in wafer defects. In the present design, the gas is formed by pumping the gas injected into the process chamber, and simultaneously applying the RF A plasma chemical vapor deposition apparatus for semiconductors, wherein the generated plasma is deposited on a wafer, comprising: a main tube equipped with a predetermined pump for pumping gas from the process chamber; The subtube in which the pumping port is By configuring the box, there is an effect that the gas can be made uniform gas flow to be evenly distributed throughout the deposition of the wafer in the process chamber.
Description
본 고안은 반도체 플라즈마 화학기상증착장비에 관한 것으로, 특히 공정챔버내의 가스를 전 영역에서 골고루 배출시킬 수 있는 반도체 플라즈마 화학기상증착장비의 가스배출장치에 관한 것이다.The present invention relates to a semiconductor plasma chemical vapor deposition apparatus, and more particularly to a gas discharge device of the semiconductor plasma chemical vapor deposition equipment that can evenly discharge the gas in the process chamber in all areas.
일반적인 반도체 플라즈마 화학기상증착장비는 공정챔버(1)와, 그 공정챔버(1)의 상부에 설치된 탑 플레이트(2)와, 상기 공정챔버의 하부에 설치된 버텀 플레이트(3)로 구성되어 있다. 도면중 4는 알에프 매칭 네트워크(R/F MATCHING NETWORK)이다.A general semiconductor plasma chemical vapor deposition apparatus is composed of a process chamber 1, a top plate 2 provided above the process chamber 1, and a bottom plate 3 provided below the process chamber. 4 shows R / F MATCHING NETWORK.
상기 공정챔버(1)는 항상 진공상태를 유지한 상태에서 주입된 암모니아 가스와 싸이렌 가스 등을 챔버(1)의 외부로 펌핑하는 중에 가스를 유동시키게 되고, 그 유동되는 가스가 웨이퍼에 증착되도록 하고 있는데, 여기서 상기 공정챔버(1)내의 각 가스를 펌핑하기 위한 배관은 도 2a 및 도 2b에 도시된 바와 같이 양방향 펌핑식 또는 단방향 펌핑식이 주로 사용되고 있다.The process chamber 1 flows the gas while pumping the injected ammonia gas and the siren gas to the outside of the chamber 1 while maintaining the vacuum at all times, and the flowing gas is deposited on the wafer. Here, the pipe for pumping each gas in the process chamber (1), as shown in Figures 2a and 2b is mainly used bidirectional pumping or unidirectional pumping.
도시된 바와 같이, 양방향 펌핑식은 소정의 펌프(미도시)와 연통된 메인튜브(11)와, 그 메인튜브(11)의 단부에서 공정챔버(1)의 내측으로 분관 연장되어 웨이퍼의 양측에 각각 펌핑포트(12a,12b)가 배치된 서브튜브(12)로 이루어져 있다.As shown, the bidirectional pumping method is a main tube 11 in communication with a predetermined pump (not shown), and branch pipes extend from the end of the main tube 11 into the process chamber 1 to both sides of the wafer, respectively. It consists of a subtube 12 in which pumping ports 12a and 12b are arranged.
한편, 상기 단방향 펌핑식은 소정의 펌프(미도시)와 연통된 메인튜브(21)가 공정챔버(1)의 내측에 안착된 웨이퍼의 일측에 펌핑포트(21a)가 배치되도록 이루어져 있다.On the other hand, the unidirectional pumping type is configured such that the pumping port 21a is disposed on one side of the wafer in which the main tube 21 communicating with a predetermined pump (not shown) is seated inside the process chamber 1.
상기와 같은 양방향 펌핑식이나 또는 단방향 펌핑식은 모두 앞에서 언급한 바와 같이, 공정챔버(1)내에 암모니아 가스나 또는 싸이렌 가스 등이 주입된 상태에서 알에프(R/F)를 인가하여 플라즈마를 발생시킴과 동시에 상기 각 가스를 외부로 펌핑하면서 웨이퍼에 증착되도록 하는 것이었다.As described above, both the bidirectional pumping method and the unidirectional pumping method generate plasma by applying RF (R / F) in the state in which ammonia gas or siren gas is injected into the process chamber 1 and the like. At the same time, it was to be deposited on the wafer while pumping each gas to the outside.
그러나, 상기와 같은 양방향 펌핑식이나 또는 단방향 펌핑식 가스배출장치에 있어서는, 실제 가스의 흐름이 도 2a 및 도 2b의 화살표와 같이 펌핑포트(12a,12b,21a)측으로 집중되어 가스의 밀도가 높아지는 반면, 그 이외의 부위에는 가스의 밀도가 낮아져 결국 웨이퍼에 플라즈마가 불균일하게 증착되어 웨이퍼 불량이 초래되는 문제점이 있었다.However, in the bidirectional pumping or unidirectional pumping gas discharge device as described above, the flow of the actual gas is concentrated toward the pumping ports 12a, 12b, 21a as shown by the arrows of FIGS. On the other hand, in other parts of the gas, the density of the gas is lowered, and thus, plasma is unevenly deposited on the wafer, resulting in a wafer defect.
따라서, 본 고안은 상기와 같은 종래 플라즈마 화학기상증착장비의 가스배출장치의 문제점을 감안하여 안출한 것으로, 상기 공정챔버내의 가스가 웨이퍼의 전역에 걸쳐 골고루 분산 증착되도록 가스흐름을 균일하게 할 수 있는 반도체 플라즈마 화학기상증착장비의 가스배출장치를 제공하려는데 그 목적이 있다.Accordingly, the present invention is conceived in view of the problems of the gas discharge device of the conventional plasma chemical vapor deposition equipment as described above, it is possible to uniformize the gas flow so that the gas in the process chamber is uniformly distributed deposition throughout the wafer It is an object of the present invention to provide a gas discharge device for semiconductor plasma chemical vapor deposition equipment.
도 1은 종래 반도체 반도체 플라즈마 화학기상증착장비의 구성을 분해하여 보인 정면도.1 is an exploded front view showing the configuration of a conventional semiconductor semiconductor plasma chemical vapor deposition equipment.
도 2a 및 도 2b는 종래 반도체 플라즈마 화학기상증착장비에 있어서, 양방향 펌핑식 및 단방향 펌핑식 가스배출장치의 일부를 보인 횡단면도.2A and 2B are cross-sectional views showing a part of a bidirectional pumping and unidirectional pumping gas discharge device in a conventional semiconductor plasma chemical vapor deposition apparatus.
도 3은 본 고안에 의한 반도체 플라즈마 화학기상증착장비에 있어서, 다방향 펌핑식 가스배출장치의 일부를 보인 횡단면도.Figure 3 is a cross-sectional view showing a part of a multi-directional pumping gas discharge device in the semiconductor plasma chemical vapor deposition apparatus according to the present invention.
***도면의 주요 부분에 대한 부호의 설명****** Description of the symbols for the main parts of the drawings ***
110 : 메인튜브 120,130 : 서브튜브110: main tube 120,130: sub tube
121,122a,122b,123,131,132a,132b,133 : 펌핑포트121,122a, 122b, 123,131,132a, 132b, 133: pumping port
이와 같은 본 고안의 목적을 달성하기 위하여, 공정챔버내로 주입된 가스를 펌핑하여 가스흐름을 형성시킴과 동시에 알에프를 인가하여 발생된 플라즈마가 웨이퍼에 증착되도록 하는 반도체의 플라즈마 화학기상증착장비에 있어서, 상기 공정챔버로부터 가스를 펌핑하기 위한 소정의 펌프가 장착되는 메인튜브와, 그 메인튜브의 단부에서 분관되어 상기 웨이퍼의 방사상 위치에 펌핑포트가 배치되는 서브튜브를 포함하여 구성되는 것을 특징으로 하는 반도체 플라즈마 화학기상증착장비의 가스배출장치가 제공된다.In order to achieve the object of the present invention, in the plasma chemical vapor deposition equipment of the semiconductor to pump the gas injected into the process chamber to form a gas flow and at the same time the plasma generated by applying the RF deposited on the wafer, A semiconductor comprising a main tube mounted with a predetermined pump for pumping gas from the process chamber, and a subtube branched from an end of the main tube and having a pumping port disposed at a radial position of the wafer. A gas discharge device for plasma chemical vapor deposition equipment is provided.
이하, 본 고안에 의한 반도체 플라즈마 화학기상증착장비의 가스배출장치를 첨부도면에 도시된 일실시예에 의거하여 상세하게 설명한다.Hereinafter, the gas discharge device of the semiconductor plasma chemical vapor deposition apparatus according to the present invention will be described in detail based on the embodiment shown in the accompanying drawings.
도 3은 본 고안에 의한 반도체 플라즈마 화학기상증착장비에 있어서, 다방향 펌핑식 가스배출장치의 일부를 보인 횡단면도이다.Figure 3 is a cross-sectional view showing a part of the multi-directional pumping gas discharge device in the semiconductor plasma chemical vapor deposition apparatus according to the present invention.
이에 도시된 바와 같이, 본 고안에 의한 플라즈마 화학기상증착장비의 가스배출장치는, 전체적으로는 다방향 펌핑식으로 형성하여 공정챔버(1) 대부분의 방향에서 균일하게 가스를 펌핑하고자 하는 것으로, 상기 공정챔버(1)로부터 가스를 펌핑하기 위하여 소정의 펌프(미도시)가 장착되는 메인튜브(110)와, 그 메인튜브(110)의 단부에서 공정챔버(1)의 양측으로 삽입되도록 분관되고 그 단부에서 다시 상기 웨이퍼의 방사상 외곽에 다수개(도면에선 8개임)의 펌핑포트(121, 122a, 122b, 123, 131, 132a, 132b, 133)가 배치되도록 분관되는 서브튜브(120, 130)를 포함하여 구성된다.As shown in the drawing, the gas discharge device of the plasma chemical vapor deposition apparatus according to the present invention is to be formed in a multi-directional pumping system as a whole to pump the gas uniformly in most directions of the process chamber 1, the process The main tube 110 is equipped with a predetermined pump (not shown) for pumping gas from the chamber 1, and the pipe is inserted to be inserted into both sides of the process chamber 1 at the end of the main tube 110. And sub-tubes 120 and 130 which are branched so that a plurality of pumping ports 121, 122a, 122b, 123, 131, 132a, 132b, and 133 are arranged on the radially outer side of the wafer. It is configured by.
상기 펌핑포트는 서브튜브(120,130)의 단부로부터 먼거리에 형성되는 펌핑포트(121,131) 일수록 시간적으로 늦게 펌핑되는 반면에 서브튜브(120,130)의 단부에 형성되는 펌핑포트(123,133) 일수록 빨리 펌핑되므로, 각 펌핑포트간의 펌핑량을 일정하게 하기 위하여는 상기 서브튜브(120,130)의 단부로부터 먼거리의 펌핑포트(121,131)로 갈수록 직경이 소정의 비율로 점차 크게 형성된다.Since the pumping ports are pumped later in time for the pumping ports 121 and 131 formed at a distance from the ends of the subtubes 120 and 130, the pumping ports 123 and 133 formed at the ends of the subtubes 120 and 130 are pumped faster, respectively. In order to maintain a constant pumping amount between the pumping ports, the diameter is gradually increased at a predetermined ratio toward the pumping ports 121 and 131 at a distance from the ends of the subtubes 120 and 130.
도면중 종래와 동일한 부분에 대하여는 동일한 부호를 부여하였다.In the drawings, the same reference numerals are given to the same parts as in the prior art.
상기와 같이 구성되는 본 고안에 의한 플라즈마 화학기상증착장비의 가스배출장치는, 공정챔버(1)내에 암모니아 가스나 또는 싸이렌 가스 등이 주입된 상태에서 알에프(R/F)를 인가하여 플라즈마를 발생시킴과 동시에 상기 각 가스를 외부로 펌핑하면서 웨이퍼에 증착되도록 하는 것인데, 이때 상기 각 서브튜브(120,130)의 단부에 각각 수개씩의 펌핑포트가 형성되어 있고, 그 중에서도 서브튜브(120,130)의 단부에서 먼거리에 형성되는 펌핑포트일수록 그 직경이 점진적으로 커지게 되어 펌핑량 및 펌핑속도가 균일하게 조절되는 것이다.The gas discharge device of the plasma chemical vapor deposition apparatus according to the present invention configured as described above generates plasma by applying RF (R / F) in a state in which ammonia gas or siren gas is injected into the process chamber 1. At the same time, the pump is deposited on the wafer while pumping the gas to the outside. At this time, several pumping ports are formed at the end of each of the subtubes 120 and 130, and at the ends of the subtubes 120 and 130. As the pumping port is formed at a far distance, the diameter thereof is gradually increased so that the pumping amount and the pumping speed are uniformly adjusted.
즉, 상기 서브튜브(120,130)의 단부에 형성되는 펌핑포트(123,133)의 직경이 가장 작으므로 가장 작은 펌핑력이 발현되는데 반해, 상기 서브튜브(120,130)의 단부로부터 가장 먼 거리에 형성되는 펌핑포트(121,131)의 직경이 가장 크므로 가장 큰 펌핑력이 발현되는 것이다.That is, since the pumping ports 123 and 133 formed at the ends of the subtubes 120 and 130 have the smallest diameter, the smallest pumping force is expressed, whereas the pumping ports are formed at the farthest distance from the ends of the subtubes 120 and 130. Since the diameter of the (121,131) is the largest, the largest pumping force is expressed.
이상에서 설명한 바와 같이 본 고안에 의한 반도체 플라즈마 화학기상증착장비의 가스배출장치는, 공정챔버내로 주입된 가스를 펌핑하여 가스흐름을 형성시킴과 동시에 알에프를 인가하여 발생된 플라즈마가 웨이퍼에 증착되도록 하는 반도체의 플라즈마 화학기상증착장비에 있어서, 상기 공정챔버로부터 가스를 펌핑하기 위한 소정의 펌프가 장착되는 메인튜브와, 그 메인튜브의 단부에서 분관되어 상기 웨이퍼의 방사상 위치에 펌핑포트가 배치되는 서브튜브를 포함하여 구성함으로써, 상기 공정챔버내의 가스가 웨이퍼의 전역에 걸쳐 골고루 분산 증착되도록 가스흐름을 균일하게 할 수 있는 효과가 있다.As described above, the gas discharge device of the semiconductor plasma chemical vapor deposition apparatus according to the present invention, pumps the gas injected into the process chamber to form a gas flow and at the same time to apply the RF to the plasma generated by the deposition on the wafer In a plasma chemical vapor deposition apparatus of a semiconductor, a main tube equipped with a predetermined pump for pumping gas from the process chamber, and a subtube which is branched at an end of the main tube and disposed at a radial position of the wafer. By including, there is an effect that the gas flow can be made uniform so that the gas in the process chamber is evenly distributed deposition throughout the wafer.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970025869U KR19990012742U (en) | 1997-09-12 | 1997-09-12 | Gas discharge device for semiconductor plasma chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970025869U KR19990012742U (en) | 1997-09-12 | 1997-09-12 | Gas discharge device for semiconductor plasma chemical vapor deposition equipment |
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| Publication Number | Publication Date |
|---|---|
| KR19990012742U true KR19990012742U (en) | 1999-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970025869U KR19990012742U (en) | 1997-09-12 | 1997-09-12 | Gas discharge device for semiconductor plasma chemical vapor deposition equipment |
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| Country | Link |
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| KR (1) | KR19990012742U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389449B1 (en) * | 2001-06-26 | 2003-06-27 | 주성엔지니어링(주) | vacuum plate have symmetrical air-load block |
| KR100702831B1 (en) * | 2004-08-20 | 2007-04-03 | 주식회사 에이디피엔지니어링 | Apparatus for processing substrate with plasma |
| WO2009108568A2 (en) * | 2008-02-28 | 2009-09-03 | Applied Materials, Inc. | Gas flow equalizer plate suitable for use in a substrate process chamber |
-
1997
- 1997-09-12 KR KR2019970025869U patent/KR19990012742U/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389449B1 (en) * | 2001-06-26 | 2003-06-27 | 주성엔지니어링(주) | vacuum plate have symmetrical air-load block |
| KR100702831B1 (en) * | 2004-08-20 | 2007-04-03 | 주식회사 에이디피엔지니어링 | Apparatus for processing substrate with plasma |
| WO2009108568A2 (en) * | 2008-02-28 | 2009-09-03 | Applied Materials, Inc. | Gas flow equalizer plate suitable for use in a substrate process chamber |
| WO2009108568A3 (en) * | 2008-02-28 | 2009-11-05 | Applied Materials, Inc. | Gas flow equalizer plate suitable for use in a substrate process chamber |
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