WO2018214332A1

WO2018214332A1 - Process chamber and semiconductor processing apparatus

Info

Publication number: WO2018214332A1
Application number: PCT/CN2017/100515
Authority: WO
Inventors: 李萌; 赵梦欣; 丁培军; 刘菲菲; 李冬冬; 陈鹏
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2017-05-25
Filing date: 2017-09-05
Publication date: 2018-11-29
Also published as: CN108962713B; TW201901797A; CN108962713A; TWI634598B

Abstract

Disclosed are a process chamber and a semiconductor processing apparatus. The process chamber comprises: a chamber body (1), an upper electrode plate (3), a heat source (13) arranged at the top in the chamber body, and a substrate (2) arranged at the bottom in the chamber body. The heat source is arranged opposite a substrate area, wherein a gas transmission channel is arranged in the upper electrode plate, and the upper electrode plate can move between a pre-cleaning process position and a degassing process position; where the upper electrode plate is located in the pre-cleaning process position, the upper electrode plate is located between the heat source and the substrate, and the upper electrode plate is directly opposite the substrate area, so as to carry out a pre-cleaning process on a workpiece (8) to be processed with the help of a process gas from the gas transmission channel; and where the upper electrode plate is located in the degassing process position, the upper electrode plate deviates from the substrate area, and the heat source is directly opposite the substrate area, so as to carry out a degassing process on the workpiece to be processed. The process chamber and the semiconductor processing apparatus can increase the process gas utilization rate and the pre-cleaning effect.

Description

Process chamber and semiconductor processing equipment

Technical field

The present invention relates to the field of plasma equipment, and more particularly to a process chamber and a semiconductor processing apparatus.

Background technique

Plasma equipment is widely used in manufacturing fields such as semiconductors, solar cells, and flat panel displays. Common plasma devices include capacitively coupled plasma (CCP), Inductively Coupled Plasma (ICP), and Electron Cyclotron Resonance (ECR) types of plasma processing equipment. These plasma devices are generally available in plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD) processes. Used in.

Plasma equipment requires a large amount of gas to be used, and how to optimize the supply of gas has become a technical problem that needs to be solved in the field.

Taking a physical vapor deposition process as an example, the process is a commonly used processing technique in the field of microelectronics, such as for processing copper interconnect layers in integrated circuits. The fabrication of the copper interconnect layer mainly includes steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. Wherein, the degassing process generally heats the workpiece to be processed, for example, the workpiece to be processed, for example, to be processed by a heat source, and removes the gas after vacuuming. The purpose of the pre-cleaning is to remove contaminants, grooves and residues at the bottom of the perforated surface of the workpiece to be treated of the workpiece to be treated before depositing the metal film. The common pre-cleaning process refers to exciting a process gas such as Ar (argon gas) or He (helium gas) into a plasma, and treating the surface of the workpiece to be treated by chemical reaction of the plasma and physical bombardment. In the prior art, physical vapor deposition equipment The degassing chamber and the pre-cleaning chamber are integrated into one process chamber, as shown in Fig. 1, the process chamber includes a cavity 1', a garage 2', a base 3', an electrode plate 4', and a rotating mechanism 6', the cavity 1' is in communication with the garage 2', the base 3' is located in the cavity 1', and the workpiece 7' to be treated is placed on the surface of the base 3'. The pedestal 3' is electrically connected to a radio frequency power source (not shown). An air inlet 11' and an air outlet 12' are disposed in the cavity 1'. The air inlet 11' is opened on the side wall of the cavity 1', and the air outlet 12' is opened on the bottom wall of the cavity 1'. And the terminal is connected to the vacuum pump; in addition, a heating bulb 13' is further disposed at an upper portion of the cavity 1'.

When pre-cleaning is performed, the electrode plate 4' is rotated into the cavity 1', opposite to the workpiece 7' to be treated on the base 3', and the process gas enters the cavity 1' from the air inlet. The process gas is excited by the voltage formed between the electrode plate 4' and the susceptor 3' to be plasma, and the plasma bombards the surface of the workpiece 7' to be processed to realize pre-cleaning of the workpiece 7' to be processed. The middle arrow is a schematic representation of the flow path of the process gas within the processing chamber. When degassing is performed, the electrode plate 4' is rotated into the garage 2', the heating bulb 13' is turned on, and the workpiece 7' to be processed is heated, while the vacuum pump draws out the gas therein to effect a degassing process.

In the prior art, since the heating bulb 13' is mounted on the top wall of the cavity, the air inlet is not provided on the top wall of the cavity, so the air inlet 11' is provided on the side wall of the cavity, but the side wall is The gas has the following problem: the process gas is easily pumped away from the gas outlet 12' by the vacuum pump, and only partially enters between the base 3' and the electrode plate 4', resulting in a low utilization rate of the process gas; and the process gas is self-cavity 1 The air inlet 11' on the side wall of the 'wall enters the cavity 1', and the path length difference to the surface of the workpiece 7' to be processed is large, resulting in uneven plasma energy generated by the excitation, which directly affects the effect of pre-cleaning.

Summary of the invention

The present invention provides a process chamber and a semiconductor processing apparatus that solve at least the technical problems of the prior art process gases that are not utilized due to side intake and that generate plasma energy non-uniformity.

According to an aspect of the present invention, there is provided a process chamber for degassing and pre-cleaning a workpiece to be processed, the chamber comprising: a cavity, an upper electrode plate, and a cavity a heat source at the top of the body, a pedestal disposed at a bottom of the cavity, the susceptor for carrying the workpiece to be processed; wherein the heat source is disposed opposite to the pedestal region; wherein the upper electrode plate a gas passage is disposed and the position of the upper electrode plate is movable between a pre-cleaning process position and a degassing process position; wherein the upper electrode plate is in the pre-cleaning process position, the upper portion An electrode plate is located between the heat source and the base, and the upper electrode plate is directly opposite to the base region to perform a pre-cleaning process on the workpiece to be processed by a process gas from the gas passage; Where the upper electrode plate is in the degassing process position, the upper electrode plate is offset from the pedestal region, and the heat source is directly opposite to the pedestal region to perform the workpiece to be processed Degassing process.

Wherein, the upper electrode plate comprises an electrode plate body; the electrode plate body is provided with an air inlet, an air flow channel and an air outlet, and the air flow channel communicates with the air inlet and the air outlet; Gas enters the air flow passage from the air inlet and flows out of the electrode plate body from the air outlet.

Wherein the electrode plate body is in the shape of a disk; the air flow channel is disposed inside the electrode plate body; the air inlet is disposed on a sidewall of the electrode plate body in a thickness direction; the air outlet And disposed on a surface of the electrode plate body opposite to the base.

Wherein, the upper electrode plate further includes an electrode shimming plate, the electrode shimming plate is provided with a merging hole; the electrode shimming plate is disposed under the electrode plate body, and the electrode plate body is at the electrode plate body An orthographic projection on the lower surface covers the gas outlet; a flow chamber is formed between the electrode flow plate and the electrode plate body, and the process gas enters the flow chamber from the gas outlet, and The spar holes are delivered above the pedestal area.

Wherein, the upper electrode plate further includes an adjusting member, the adjusting member is disposed between the electrode plate main body and the electrode shimming plate for adjusting between the electrode plate main body and the electrode shimming plate The distance between the electrode plate body, the adjusting member and the electrode shimming plate constitutes the shimming chamber.

Wherein, the process chamber further includes an inversion mechanism connected to the upper electrode plate, and the position of the upper electrode plate is between a pre-cleaning process position and a degassing process position by a flipping action mobile.

Wherein, the process chamber further includes a translating mechanism coupled to the upper electrode plate and moving the position of the upper electrode plate between the pre-cleaning process position and the degassing process position by a translational action.

Wherein, the process chamber further includes a connecting shaft and a rotating mechanism; one end of the connecting shaft is fixedly connected to the upper electrode plate, and the other end is connected to the rotating mechanism, and the rotating mechanism drives the connecting shaft to drive The electrode plate is rotated; a first intake passage is disposed in the connecting shaft, and the process gas is delivered to the upper electrode plate through the first intake passage.

Wherein the rotating mechanism includes a swinging cylinder, a coupling, and a rotating shaft, wherein the swinging cylinder is coupled to one end of the rotating shaft through the coupling, and the other end of the rotating shaft and the connecting shaft Connecting, the swinging cylinder drives the rotating shaft to drive the connecting shaft to rotate; the rotating shaft is provided with a second intake passage, and the second intake passage is in communication with the first intake passage.

Wherein the chamber further includes an intake pipe disposed outside the rotating mechanism and communicating with the second intake passage; the process gas flowing from the intake pipe through the second inlet The first intake passage is input after the air passage.

Wherein the connecting shaft is located in the cavity and passes through a bottom wall of the cavity, the rotating mechanism is located outside the bottom wall of the cavity; between the bottom wall and the rotating mechanism A level adjustment mechanism is provided for adjusting the levelness of the upper electrode plate.

Wherein the horizontal adjustment mechanism includes a plurality of adjustment rods and a connecting plate, wherein the connecting plate is disposed between the bottom wall and the rotating mechanism, and is connected to the rotating mechanism; the connecting shaft passes through The connecting plate has a spacing from the bottom wall; one end of the adjusting rod is fixedly connected to the bottom wall, the other end passes through the connecting plate, and the connecting rod passes through the connecting plate The length is adjustable; adjusting the horizontality of the connecting plate by adjusting the length of the adjusting rod, the adjusting plate drives the rotating mechanism to adjust the verticality of the connecting shaft, thereby realizing The level of the electrode plate is adjusted.

Wherein the horizontal adjustment mechanism further comprises a telescopic tube; the telescopic tube is sleeved on the connecting shaft Further, the first end thereof is sealingly connected to the bottom wall, and the second end is sealingly connected to the connecting plate.

Wherein the cavity includes a first sub-cavity and a second sub-cavity, wherein the first sub-cavity is disposed on a sidewall of the second sub-cavity and is opposite to the second sub-cavity Body communication; wherein the pedestal is disposed within the second sub-cavity; the position of the upper electrode plate is switchable between the first sub-cavity and the second sub-cavity; When the upper electrode plate moves into the second sub-cavity, the upper electrode plate is in the pre-cleaning process position; when the electrode plate moves into the first sub-cavity, the upper electrode plate In the degassing process position.

In another aspect, the present invention also provides a semiconductor processing apparatus comprising the process chamber of any of the above aspects of the present invention.

Beneficial effects:

The process chamber of the present invention can change the position of the upper electrode plate between the pre-cleaning process position and the degassing process position, and when the upper electrode plate is in the degassing process position, the upper electrode plate is offset from the pedestal region. Therefore, the heat source is directly opposite to the pedestal region, and the workpiece to be processed is subjected to a degassing process; when the upper electrode plate is in the pre-cleaning process position, the upper electrode plate is located between the heat source and the pedestal, that is, the upper electrode plate and the pedestal region Directly opposite, the process gas is delivered directly above the susceptor by means of an upper electrode plate with a gas channel, since the process gas does not enter the chamber from the lower region of the chamber, it is not trapped by the vacuum pump below the chamber Direct pumping eliminates the need to replenish a large amount of process gas to maintain the excited state of the plasma, thereby increasing the utilization of process gases and reducing the consumption and waste of process gases. In addition, the path length of the process gas outputted through the gas passage of the upper electrode plate to the workpiece to be processed is substantially the same, so that the plasma energy generated by the excitation of the process gas is substantially uniform, and the plasma in the upper region of the workpiece to be processed is stable. Thereby improving the effect of pre-cleaning.

The semiconductor processing apparatus of the present invention comprises the process chamber provided by the present invention, wherein the position of the upper electrode plate can be changed between the pre-cleaning process position and the degassing process position according to the process requirements, that is, the upper electrode plate is in the In the gas process position, the upper electrode plate is deviated from the pedestal region to perform a degassing process on the workpiece to be processed; when the upper electrode plate is in the pre-cleaning process position, the upper electrode plate and the pedestal are The regions are directly opposite each other, and the process gas is directly delivered to the top of the susceptor by means of an upper electrode plate with a gas passage for the pre-cleaning process. Since the process gas does not enter the chamber from the lower region of the chamber during the pre-cleaning process, it is not directly pumped away by the vacuum pump located below the chamber, so there is no need to replenish a large amount of process gas to maintain the excited state of the plasma. Therefore, the semiconductor processing apparatus of the present invention can improve the utilization rate of process gases and reduce the consumption and waste of process gases. In addition, the path length of the process gas outputted through the gas passage of the upper electrode plate to the workpiece to be processed is substantially the same. Therefore, by using the semiconductor processing apparatus of the present invention, the plasma energy generated by the process gas excitation is substantially uniform, and is to be processed. The plasma in the upper region of the workpiece is stabilized, thereby improving the effect of pre-cleaning.

DRAWINGS

Figure 1 is a schematic view of a cross-sectional view of a prior art chamber;

2 is a cross-sectional view of a process chamber in accordance with an embodiment of the present invention;

3 is a cross-sectional view of an upper electrode plate according to an embodiment of the present invention;

4 is a perspective view showing the connection of an upper electrode plate, a connecting shaft, a rotating mechanism, and an intake pipe of a process chamber according to an embodiment of the present invention;

5 is a cross-sectional view showing a connection relationship between an upper electrode plate, a connecting shaft, a rotating mechanism, and an intake pipe in a process chamber according to an embodiment of the present invention;

Figure 6 is a cross-sectional view of an upper electrode plate in an embodiment of the present invention;

Figure 7 is a cross-sectional view showing a level adjusting mechanism in an embodiment of the present invention;

Figure 8 is a view showing a state in which the upper electrode plate of the flipping mode is in the pre-cleaning process position;

Figure 9 is a view showing a state in which the upper electrode plate of the flipping mode is in the degassing process position;

Figure 10 is a view showing a state in which the upper electrode plate of the translational mode is in the pre-cleaning process position;

Figure 11 is a view showing a state in which the upper electrode plate of the translational mode is in the degassing process position.

Wherein, the reference numerals are:

Cavity-1', air inlet -11', air outlet -12', garage-2', base-3', electrode plate-4', rotating Mechanism -6', workpiece -7' to be treated, heating bulb-13';

Cavity-1, first sub-cavity-11, second sub-cavity-12, pedestal-2, upper electrode plate-3, heat source-13, electrode plate body-31, air inlet-311, air flow passage -312, air outlet -313, electrode flow plate -32, flow hole -321, flow chamber -33, adjusting member -34, connecting shaft -4, first intake passage -41, rotating mechanism -5, Swing cylinder-51, coupling-52, rotating shaft-53, second intake passage-531, intake pipe-6, level adjusting mechanism-7, adjusting rod-71, connecting plate-72, telescopic tube-73, Workpiece to be processed-8, turning mechanism-10, slide rail-111

detailed description

Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, numerical expressions and numerical values set forth in the embodiments are not intended to limit the scope of the invention unless otherwise specified.

The following description of the at least one exemplary embodiment is merely illustrative and is in no way

Techniques, methods and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but the techniques, methods and apparatus should be considered as part of the specification, where appropriate.

In all of the examples shown and discussed herein, any specific values are to be construed as illustrative only and not as a limitation. Thus, other examples of the exemplary embodiments may have different values.

It should be noted that similar reference numerals and letters indicate similar items in the following figures, and therefore, once an item is defined in one figure, it is not required to be further discussed in the subsequent figures.

The invention provides a process chamber for degassing and pre-cleaning a workpiece to be processed, the chamber comprising: a cavity, an upper electrode plate, a heat source disposed at the top of the cavity, and a base disposed at the bottom of the cavity . The base is configured to carry a workpiece to be processed; wherein the heat source is disposed opposite to the base region. The upper electrode plate is provided with a gas passage and the position of the upper electrode plate can be moved between the pre-cleaning process position and the degassing process position according to the process requirement; wherein the upper electrode plate is in the pre-cleaning process position In the case where the upper electrode plate is located between the heat source and the susceptor, that is, the upper electrode plate is directly opposed to the pedestal region to perform a pre-cleaning process on the workpiece to be processed by the process gas from the gas transmission passage; In the case of the gas process position, the upper electrode plate is offset from the pedestal region, and the heat source is directly opposed to the pedestal region, and the workpiece to be processed is subjected to a degassing process.

A specific embodiment in which the position of the upper electrode plate is moved between the pre-cleaning process position and the degassing process position by the rotation mode will be described in detail below with reference to FIGS. 2 to 7.

As shown in FIG. 2 to FIG. 7, the process chamber includes a cavity 1, a pedestal 2 disposed at a lower portion of the cavity 1, an upper electrode plate 3, and a heat source 13. Generally, the heat source 13 is disposed in the top region of the cavity 1, the pedestal 2 is disposed in the bottom region of the cavity 1, and the pedestal 2 is a radio frequency pedestal, that is, the pedestal 2 is electrically connected to the radio frequency power source. The lower electrode plate, or the pedestal 2 is directly connected to the RF power source. The upper electrode plate 3 is also connected to a power source. When the upper electrode plate 3 is rotated above the susceptor 2, the process gas is transported to the upper side of the susceptor 2 through the gas passage, and the process gas is at the susceptor 2 and the upper electrode plate 3. The voltage formed between them is excited as a plasma, whereby the workpiece 8 to be treated can be pre-cleaned. Specifically, a gas passage for conveying a process gas is disposed in the upper electrode plate 3. The process gas is directly delivered to the upper side of the susceptor 2 via the gas passage, and is excited as a plasma between the susceptor 2 and the upper electrode plate 3, thereby pre-cleaning the workpiece 8 to be processed.

The arrow in FIG. 2 is an illustration of the flow path of the process gas, specifically, the process gas in the gas passage of the upper electrode plate 3 is conveyed above the susceptor 2 in the direction of the arrow. Under the action of the voltage formed between the susceptor 2 and the upper electrode plate 3, the process gas is excited into a plasma between the susceptor 2 and the upper electrode plate 3, and the bombardment action of the surface of the workpiece 8 to be treated by the plasma is realized. Pre-cleaning of the workpiece 8 to be treated.

The process chamber of the present invention directly transports the process gas to the upper portion of the susceptor 2 through the gas passage in the upper electrode plate 3. Since the process gas does not enter the chamber from the lower region of the chamber, it is not located in the chamber. The vacuum pump below is directly pumped away, so that a large amount of process gas is not needed to maintain the excited state of the plasma, thereby increasing the utilization rate of the process gas and reducing the consumption and waste of the process gas. In addition, the process gas outputted by the gas passage of the upper electrode plate 3 is reached. The length of the path for processing the workpiece 8 is substantially uniform, so that the plasma energy generated by the excitation of the process gas is substantially uniform, so that the plasma in the upper region of the workpiece 8 to be treated is stabilized, thereby improving the effect of pre-cleaning.

According to an embodiment of the process chamber of the present invention, the upper electrode plate comprises an electrode plate body; the electrode plate body is provided with an air inlet, an air flow channel and an air outlet; the process gas is input from the air inlet and flows through the air flow channel. It is delivered from the air outlet to the top of the base.

In the above embodiment, the air inlet, the air flow channel and the air outlet provided on the upper electrode plate constitute a gas transmission passage, and the air outlet is disposed on a side of the electrode plate body facing the base to directly transport the process gas to the upper electrode plate. The space opposite the pedestal.

According to an embodiment of the process chamber of the present invention, the upper electrode plate body is disc-shaped; the air inlet is disposed on the sidewall of the electrode plate body along the thickness direction; and the air outlet is disposed on the electrode plate body opposite to the base On the surface; the air flow passage is disposed inside the electrode plate body, and the air flow passage communicates with the air inlet and the air outlet.

Specifically, referring to FIG. 2 and FIG. 3, the upper electrode plate 3 includes an electrode plate main body 31. The shape of the electrode plate main body 31 is preferably a disk shape having a certain thickness, and a rectangular disk shape, an elliptical shape, or the like may be selected. The shape used. The electrode plate main body 31 is provided with an air inlet 311, an air flow passage 312, and an air outlet 313. In a specific implementation, the air source may be directly connected to the air inlet 311 to input the process gas into the air flow channel 312 of the upper electrode plate 3, and then from the air outlet 313 to the upper side of the base 2. Thus, the air inlet 311 is disposed on the side wall of the upper electrode plate 3, and the air outlet 313 is disposed on the surface of the upper electrode plate 3 opposite to the base 2, thereby achieving upper air intake, thereby solving the prior art. Since the heating bulb is disposed on the top wall of the cavity, the problem that the air inlet is provided on the top wall prevents the upper air intake from being realized.

The number and position of the air inlet 311 and the air outlet 313 can be flexibly selected according to actual needs. For example, the intake port 311 and the air outlet 313 are respectively disposed at both ends of the longitudinal direction of the electrode plate main body 31 (that is, the radial direction of the disk); for example, the intake port 311 is located at the thickness direction of the electrode plate main body 31. On the wall, the air outlet 313 is located on the wall in the longitudinal direction of the electrode plate main body 31.

The process gas is input from the air inlet 311, flows through the air flow passage 312, and is sent from the air outlet 313 to the upper side of the base 2. The air flow passage 312 may be a passage of a tubular structure between the air inlet 311 and the air outlet 313; or, the air flow passage 312 may be a passage of a cavity structure in the electrode plate main body 31, due to the air flow passage 312 of the cavity structure It is a cavity-like structure, so that it can sufficiently diffuse the process gas delivered from the air inlet 311, thereby facilitating the improvement of the uniformity and stability of the output process gas.

The shape, number, and setting position of the air outlet 313 can be flexibly set. For example, the air outlet 313 is circular or rectangular; for example, the number of the air outlets 313 is one or two or more; and for example, when the electrode plate main body 31 has a disk-shaped structure, the air outlet 313 is located in the disk At the center position of the lower surface, in particular, when the electrode plate main body 31 has a disk-shaped structure, the air flow passage 312 extends in the radial direction of the disk.

The upper electrode plate 3 shown in Fig. 3 is taken as an example. In this embodiment, the cross-sectional shape of the electrode plate main body 31 in the axial direction thereof is a rectangle. In this cross-sectional view, the air inlet 311 is located on the wide side of the rectangle, and the air outlet 313 is located at the center point of the long side of the rectangle. The air flow passage 312 extends from one wide side of the rectangle to the other wide side.

When the number of the air outlets 313 is set to one, the air outlets 313 are located at the center of the electrode plate main body 31. This arrangement facilitates the uniform diffusion of the process gas in the gas flow passage 312 and enables the process gas flowing out of the gas outlet 313 to be uniformly and stably conveyed toward the susceptor 2.

According to another embodiment of the process chamber of the present invention, the upper electrode plate further includes an electrode shimming plate, and the electrode shimming plate is provided with a merging hole; the electrode shimming plate is disposed under the electrode plate body; the electrode shimming plate A turbulent cavity is formed between the main body and the electrode body, and the process gas enters the grading cavity from the gas outlet port, and is transported to the upper side of the susceptor through the merging hole through the averaging cavity.

Referring specifically to Figures 2 and 3, the upper electrode plate 3 further includes an electrode flow plate 32, and the shape of the electrode flow plate 32 can be set according to actual needs. For example, the electrode flow plate 32 is a circular plate or a rectangular plate or the like.

The electrode flow plate 32 is disposed below the electrode plate main body 31. Here, the "lower side of the electrode plate main body 31" means a region between the electrode plate main body 31 and the susceptor 2. Electrode flow plate 32 is on the electrode plate main The orthographic projection on the body 31 must cover the air outlet 313 of the electrode plate main body 31. Preferably, the air outlet 313, the electrode flow plate 32, and the workpiece 8 to be processed on the susceptor 2 are concentrically disposed. Generally, the shape of the electrode shimming plate 32 can match the shape of the electrode plate main body 31. For example, when the electrode plate main body 31 has a disk shape, the electrode smoothing plate 32 is a circular plate.

The electrode flow plate 32 is connected to the electrode plate main body 31. The connection between the electrode shimming plate 32 and the electrode plate main body 31 can be achieved by welding or bolting or the like. It should be noted that when the electrode plate main body 31 and the electrode shimming plate 32 are connected by bolts, in order to ensure that the process gas in the air flow path 312 can be transported toward the susceptor 2 via the merging hole 321 of the electrode shimming plate 32. A seal such as a seal ring may be provided at the junction of the electrode plate main body 31 and the electrode shimming plate 32 to ensure the airtightness of the shimming chamber 33.

A flow chamber 33 is formed between the electrode flow plate 32 and the electrode plate body 31. The process gas enters the flow chamber 33 from the gas outlet 313 and is transported to the top of the base 2 through the flow chamber 33 to improve the transport to the base. The uniformity of the process gas above the seat 2.

The merging chamber 33 is formed by the electrode plate main body 31 and the electrode shimming plate 32. In a specific implementation, protrusions may be provided on the electrode plate main body 31 and/or the electrode shimming plate 32 such that there is a certain space between the electrode plate main body 31 and the electrode shimming plate 32, so that the electrode plate main body 31 and the electrode are provided. A flow chamber 33 of a cavity structure is formed between the flow plates 32. Alternatively, a support member may be provided between the electrode plate main body 31 and the electrode flow regulating plate 32, which separates the electrode plate main body 31 and the electrode flow regulating plate 32, thereby merging the electrode plate main body 31 and the electrode A stratified cavity 33 of a cavity structure is formed between the plates 32.

The air outlet 313 is in communication with the merging chamber 33. The electrode convection plate 32 is provided with a merging hole 321 which can transport the process gas from the merging chamber 33 to above the susceptor 2.

In use, the process gas enters the air flow passage 312 of the electrode plate main body 31 from the air inlet 311, and then enters the merging chamber 33 from the air outlet 313, and then flows out from the merging hole 321 of the electrode shimming plate 32, thereby conveying the process gas. Up to the top of the base 2.

The shape and number of the flow holes 321 can be set according to actual needs. For example, the flow hole 321 is a circle Hole or rectangular hole. For another example, the number of the flow holes 321 is plural, and the plurality of flow holes 321 are evenly distributed on the electrode flow plate 32. A plurality of flow holes 321 are disposed on the electrode flow plate 32, and the plurality of flow holes 321 are advantageous for improving the uniformity and stability of the gas supply of the upper electrode plate 3. The above-mentioned "uniform distribution" may be, for example, a plurality of flow holes 321 uniformly arranged in an array; or a plurality of flow holes 321 may be arranged to form a plurality of circle shapes, each of which includes a plurality of uniformities uniformly distributed in the circumferential direction. The flow holes 321 have a plurality of circles forming concentric circles and having equal radial intervals. Preferably, the plurality of circles constitute a concentric circle centered on the center of the susceptor 2, so that the process gas above the susceptor 2 is more evenly distributed.

Further, the plurality of flow holes 321 are evenly distributed on the electrode flow plate 32, and may also be in such a form that the plurality of flow holes 321 are radially arranged around the geometric center of the electrode flow plate 32. Further, the pore diameter of the flow-through hole 321 is preferably 0.5 mm to 1 mm.

According to another embodiment of the process chamber of the present invention, the upper electrode plate further includes an adjusting member disposed between the electrode plate main body and the electrode shimming plate for adjusting between the electrode plate main body and the electrode shimming plate. The distance; the electrode plate body, the adjusting member and the electrode shimming plate form a merging chamber.

Specifically, as shown in FIGS. 3 and 5, the upper electrode plate 3 further includes an adjusting member 34 for adjusting the distance between the electrode plate main body 31 and the electrode shimming plate 32 to adjust the electrode shimming plate 32. The distance from the susceptor 2 and the space in the doubling chamber 33 are adjusted.

The adjusting member 34 is located between the electrode plate main body 31 and the electrode shimming plate 32, and the adjusting member 34 is connected to the electrode plate main body 31 and the electrode shimming plate 32. The connection between the electrode plate main body 31 and the regulating member 34 can be achieved by welding, riveting, snapping or screwing. The connection between the electrode shimming plate 32 and the adjustment member 34 can be achieved by welding, riveting, snapping or screwing.

It should be noted that, in order to increase the airtightness of the shimming chamber 33, for example, a seal ring may be provided at the junction of the electrode plate main body 31 and the regulating member 34, and at the junction of the electrode shimming plate 32 and the adjusting member 4. Seals. The merging chamber 33 is composed of an electrode plate main body 31, an adjusting member 34, and an electrode shimming plate 32. The shape structure of the adjusting member 34 is preferably an annular structure, that is, the adjusting member 34 is an adjusting ring, and the inner peripheral wall of the adjusting ring is the inner peripheral wall of the flow regulating chamber 33.

Preferably, the connection between the electrode plate main body 31 and the regulating member 34 is detachable; The connection between the flow plate 32 and the adjustment member 34 is a detachable connection. The detachable connection can be achieved by snapping or screwing.

The volume or shape of the flow chamber 33 can be varied by replacing the adjustment members 34 of different thicknesses or shapes. Further, by replacing the adjusting members 34 of different thicknesses, the distance between the lower end surface of the upper electrode plate 3 and the susceptor 2 can be changed, thereby adjusting the effect of the pre-cleaning. Moreover, for different process requirements, the cost of the process chamber can be reduced by replacing the adjustment members 4 of different materials and/or different volumes.

According to an embodiment of the process chamber of the present invention, the process chamber further includes a connecting shaft and a rotating mechanism; one end of the connecting shaft is fixedly connected with the upper electrode plate, the other end is connected with the rotating mechanism, and the rotating mechanism drives the connecting shaft to drive the upper electrode plate Rotating; a first intake passage is disposed in the connecting shaft, and the process gas is delivered to the upper electrode plate through the first intake passage.

Specifically, as shown in FIG. 2, the process chamber further includes a connecting shaft 4 and a rotating mechanism 5, the first end of the connecting shaft 4 is connected to the upper electrode plate 3, and the second end of the connecting shaft 4 is connected to the rotating mechanism 5. The upper electrode plate 3 can be connected to the connecting shaft 4 through a boss extending outward on the outer surface of the electrode plate main body 31. Alternatively, the upper electrode plate 3 may be coupled to the connecting shaft 4 through a groove on the electrode plate main body 31 that matches the end of the connecting shaft 4.

The connection between the upper electrode plate 3 and the connecting shaft 4 can be achieved by welding, riveting, snapping or screwing. It should be noted that when the upper electrode plate 3 and the connecting shaft 4 are snapped or screwed, in order to improve the airtightness of the directional cavity 33, for example, a seal may be provided at the junction of the upper electrode plate 3 and the connecting shaft 4. Ring seal. In practical applications, in order to more easily connect the upper electrode plate 3 and the connecting shaft 4 together, a connecting assembly including a screw, a spring washer and a flat washer can be used.

The rotating mechanism 5 is connected to the connecting shaft 4. The rotating mechanism 5 controls the rotation of the connecting shaft 4 to drive the upper electrode plate 3 to rotate above the base 2 or to rotate the upper electrode plate 3 to deviate from above the base 2. Generally, the rotating mechanism 5 includes a driving device that can drive the rotation of the connecting shaft 4. The above driving device may be, for example, a DDR (Direct Drive Rotary) motor.

Further, a first intake passage is disposed in the connecting shaft 4, and the process gas is sent to the upper electrode plate 3 via the first intake passage 41, so that the intake port 311 for conveying the gas to the upper electrode plate 3 can be set. On the connecting shaft 4, the air inlet is taken out to facilitate the intake.

Specifically, according to an embodiment of the present invention, the rotating mechanism 5 includes a swing cylinder 51, a coupling 52, and a rotating shaft 53. The first end of the rotating shaft 53 is coupled to the connecting shaft 4. The coupling 52 connects the second end of the rotating shaft 53 and the swing cylinder 51 together. The connection between the coupling 52 and the oscillating cylinder 51 and the rotating shaft 53 can be achieved by means well known in the art, which is not further defined by the present invention. The rotating shaft 53 is connected to the connecting shaft 4. The rotating shaft 53 and the connecting shaft 4 may be coupled together by welding or integral molding.

The swing cylinder 51 drives the rotation shaft 53 to rotate, so that the rotation shaft 53 drives the rotation of the connection shaft 4. The swinging cylinder 51 drives the rotating shaft 53 to reciprocate in a certain angular range by the coupling 52. The rotating shaft 53 drives the upper electrode plate 3 connected to the connecting shaft 4 to rotate, thereby rotating the upper electrode plate 3 to the base 2. Above, or driving the upper electrode plate 3 to rotate away from the base 2, and selecting the rotation angle of the swing cylinder 51, the rotation angle of the upper electrode plate 3 can be controlled.

A first intake passage 41 is provided in the connecting shaft 4, and the process gas is sent to the upper electrode plate 3 via the first intake passage 41. Optionally, the first intake passage 41 is in communication with the intake port 311. The connecting shaft 4 functions to connect the gas source to the upper electrode plate 3. Further, the connecting shaft 5 can also function to support the upper electrode plate 3.

In a specific implementation, the process gas enters the air flow channel 312 of the electrode plate main body 31 from the air inlet 311 through the first air inlet passage 41, and then enters the merging chamber 33 from the air outlet port 313, and then the merging hole from the electrode convection plate 32. The 321 flows out of the upper electrode plate 3 to realize the air supply function to the process chamber.

A second intake passage 531 is provided in the rotating shaft 53, and the second intake passage 531 is in communication with the first intake passage 41.

Further, the process chamber of the present invention further includes an intake pipe 6 that communicates with the second intake passage 531. Alternatively, the intake pipe 6 may be coupled to the rotating shaft 53 to input the process gas into the second intake passage 531. The process gas is input from the intake pipe 6 to the second intake passage 531, and enters the upper electrode plate 3 via the first intake passage 41. Preferably, the length of the intake pipe 6 is such that it is ensured that the intake pipe 6 has a sufficient length to extend between the rotating shaft 53 and the air source when the rotating shaft 53 is rotated. For example, the intake pipe 6 may be a metal bellows such that when the rotating shaft 53 rotates, the metal bellows intake pipe 6 can be moved or telescopically deformed following the rotation of the rotating shaft 53, thereby ensuring that it can have a sufficient length to extend Between the rotating shaft 53 and the air source, and capable of being firmly connected with the rotating shaft 53 and the air source, without being broken due to the length, the connection with the rotating shaft 53 and the air source is broken as the rotating shaft 53 rotates. .

Further, according to an embodiment of the process chamber of the present invention, the connecting shaft is located in the cavity and passes through the bottom wall of the cavity, and the rotating mechanism is located outside the bottom wall of the cavity; and is further disposed between the bottom wall and the rotating mechanism There is a level adjustment mechanism for adjusting the level of the upper electrode plate.

In the present invention, a level adjusting mechanism is provided to adjust the level of the upper electrode plate to make the path length of the gas entering the susceptor more uniform, thereby making the ionized plasma more uniform.

Further, the horizontal adjustment mechanism preferably includes a plurality of adjustment rods and a connecting plate, wherein the connecting plate is disposed between the bottom wall and the rotating mechanism and is connected with the rotating mechanism; the connecting shaft passes through the connecting plate, and the connecting plate and the bottom wall have a certain Spacing; one end of the adjusting rod is fixedly connected with the bottom wall, the other end passes through the connecting plate, and the length of the adjusting rod is adjustable through the connecting plate; the level of the connecting plate is adjusted by adjusting the length of the adjusting rod through the connecting plate, the adjusting plate The rotating mechanism is adjusted to adjust the verticality of the connecting shaft, thereby adjusting the level of the upper electrode plate. The horizontal adjustment mechanism further preferably includes a telescopic tube; the telescopic tube is sleeved outside the connecting shaft, and the first end thereof is sealingly connected to the bottom wall, and the second end is sealingly connected to the connecting plate.

Specifically, as shown in FIG. 7, the level adjusting mechanism 7 of the present invention includes a plurality of adjusting levers 71 and a connecting plate 72. The connecting plate 72 is disposed below the bottom wall of the cavity 1 and has a certain distance from the bottom wall. The connecting plate 72 is provided with a connecting shaft through hole, and the connecting shaft 4 penetrates the connecting plate 72 via the connecting shaft through hole, and the connecting shaft 4 can rotate in the connecting shaft through hole. It should be noted that in order to increase the airtightness of the process chamber, a seal such as a seal ring may be provided between the connecting shaft 4 and the connecting plate 72.

The rotating mechanism 5 is mounted on the side of the connecting plate 72 facing away from the bottom wall and is connected to the connecting plate 72. One end of the adjustment rod 71 is connected to the bottom wall of the cavity 1, and the other end extends through the connection plate 72 to below the connection plate 72. One end of the adjusting rod 71 is connected to the bottom wall of the cavity 1 and may include the following method: In the first embodiment, the adjusting rod 71 is fixedly connected to the bottom wall of the cavity 1 by welding; in the second embodiment, an external thread is arranged on the outer peripheral surface of the adjusting rod 71, and an internal thread is arranged on the bottom wall of the cavity 1 through the screw connection. The adjusting rod 71 is movably connected to the bottom wall of the cavity 1; in the third manner, one end of the adjusting rod 71 is directly abutted against the bottom wall of the cavity 1 to realize the connection of the adjusting rod 71 to the bottom wall of the cavity 1. . The connecting plate 72 is arranged to be adjustable in position on the adjusting lever 71, that is, the length of the adjusting lever 71 passing through the connecting plate 72 is adjustable, in other words, the adjusting lever 71 is between the bottom wall of the cavity 1 and the connecting plate 72. The length is adjustable. When the connection between the adjusting rod 71 and the bottom wall of the cavity 1 is in the above manner, the movable connection between the adjusting rod 71 and the connecting plate 72 can be realized by the cooperation of the protrusion and the groove; when the adjusting rod 71 and the cavity are When the connection between the bottom walls of 1 is in the above manner two and three, the movable connection between the adjusting rod 71 and the connecting plate 72 can be realized by the cooperation of the projections and the grooves or by the screw connection.

The connecting plate 72 is disposed to be adjustable in position on the adjusting lever 71, thereby realizing the adjustment of the level of the connecting plate 72, thereby adjusting the verticality of the rotating mechanism 5 connected to the connecting plate 72, thereby The perpendicularity of the connecting shaft 4 to which the rotating mechanism 5 is connected is adjusted, so that the adjustment of the level of the upper electrode plate 3 connected to the connecting shaft 4 can be achieved.

The horizontal adjustment mechanism 7 preferably further includes a telescopic tube 73. The telescopic tube 73 is sleeved outside the connecting shaft 4. The two ends of the telescopic tube 73 are respectively sealedly connected with the bottom wall of the cavity 1 and the connecting plate 72 to ensure the vacuum of the cavity 1. demand. The telescopic tube 73 has elasticity, is a flexible tube or a bellows, and can be deformed and deformed within a certain range, so that the adjustment of the level of the connecting plate 72 and the electrode plate 3 and the adjustment of the verticality of the rotating mechanism 5 and the connecting shaft 4 are not performed. Generate restrictions.

Further, according to an embodiment of the present invention, the cavity includes a first sub-cavity and a second sub-cavity, wherein the first sub-cavity is disposed on the sidewall of the second sub-cavity and is coupled to the second sub-chamber The cavity is connected; wherein the base is disposed in the second sub-cavity; the upper electrode plate is movable between the first sub-cavity and the second sub-cavity; when the upper electrode plate moves into the second sub-cavity, The upper electrode plate is opposite to the base, and the pre-cleaning process is performed on the workpiece to be processed; when the upper electrode plate moves into the first sub-cavity, the upper electrode plate is separated from the top of the base to perform a degassing process on the workpiece to be processed. .

Specifically, as shown in FIG. 2, the cavity 1 includes a first sub-cavity 11 and a second sub-cavity 12, A sub-cavity 11 and a second sub-cavity 12 are in communication, and the first sub-cavity 11 is disposed on a sidewall of the second sub-cavity 12, and the susceptor 2 is disposed in the second sub-cavity 12, the upper electrode plate 3 can change position between the first sub-cavity 11 and the second sub-cavity 12, when the upper electrode plate 3 is rotated into the second sub-cavity 12, the upper electrode plate 3 is opposite to the pedestal 2 for pre-cleaning At this time, the upper electrode plate 3 is opposed to the workpiece 8 to be processed, for example, a wafer on the susceptor 2.

When the upper electrode plate 3 is rotated into the first sub-cavity 11, the upper electrode plate 3 is separated from the base 2, and a degassing process can be performed. At this time, the upper electrode plate 3 is deviated from the workpiece to be processed on the susceptor 2. 8. That is, the position of the upper electrode plate 3 and the workpiece 8 to be processed on the susceptor 2 are staggered so that the heat source 13 is opposed to the susceptor 2, thereby preventing the upper electrode plate 3 from blocking the heat source 13. In a practical application, the first sub-cavity 11 is preferably in the form of a garage, and the second sub-cavity 12 is provided with an opening 131 connected to the vacuum pump. When the degassing process is performed, the heat source 13 is turned on and the vacuum pump is turned on. .

Hereinafter, the structure and working principle of the upper electrode plate, the connecting shaft, and the rotating mechanism in the process chamber of the present invention will be described in detail by taking the specific embodiment shown in FIG. 5 as an example.

Further, in an embodiment of the present invention, the process chamber includes a cavity 1, a susceptor 2, an upper electrode plate 3, a connecting shaft 4, a rotating mechanism 5, an intake pipe 6, and a level adjusting mechanism 7. The cavity 1 includes a first sub-cavity 11 and a second sub-cavity 12, the first sub-cavity 11 and the second sub-cavity 12 are in communication, and the first sub-cavity 12 is disposed on the side of the second sub-cavity 11 On the wall, the susceptor 2 is disposed in the second sub-cavity 11, and the upper electrode plate 3 has a disc-shaped shape, and includes an electrode plate main body 31, an electrode shimming plate 32, a shimming chamber 33 and an adjusting member 34, wherein The electrode plate main body 31 is provided with an air inlet 311, an air flow passage 312, and an air outlet 313. The air inlet 311 is disposed on the wall of the electrode plate main body 31 in the thickness direction, the air outlet 313 is disposed on the surface of the electrode plate main body 31 opposite to the base 2, and the air outlet 313 is located at the center of the electrode plate main body 31, and the air outlet The number of 313 is one, and a plurality of flow holes 321 are provided on the electrode flow plate 32. The adjusting member 34 is located between the electrode plate main body 31 and the electrode shimming plate 32, and the adjusting member 34 is connected to the electrode plate main body 31 and the electrode shimming plate 32. The shimming chamber 33 is made up of the electrode plate main body 31, the regulating member 34 and the electrode. The flow plate 32 is constructed. The connecting shaft 4 is connected to the upper electrode plate 3, and the connecting shaft 4 is provided with a first intake passage 41, and the first intake passage 41 communicates with the intake port 311. The rotating mechanism 5 includes a swing cylinder 51, a coupling 52 that couples the swing cylinder 51 and the rotating shaft 53, and a rotating shaft 53 that is coupled to the connecting shaft 4. A second intake passage 531 is disposed in the rotating shaft 53, and the second intake passage 531 is in communication with the first intake passage 41. The swing cylinder 51 drives the rotary shaft 53 to rotate, so that the rotary shaft 53 drives the connecting shaft 4 to rotate. The air pipe 6 is connected to the rotating shaft 53 and communicates with the second intake passage 531 to input the process gas into the second intake passage 531.

The process gas transmission path is as follows:

The process gas enters the second intake passage 531 from the intake pipe 6, and then enters the first intake passage 41 communicating with the second intake passage 531, and re-enters the upper electrode plate 3 via the first intake passage 41. In the upper electrode plate 3, the process gas enters the gas flow channel 312 of the electrode plate main body 31 from the gas inlet port 311, and then enters the flow chamber 33 from the gas outlet port 313, and then flows out from the flow hole 321 of the electrode flow plate 32 to the upper electrode. The plate 3, whereby the process gas is delivered above the susceptor 2.

The swinging cylinder 51 drives the rotating shaft 53 to reciprocate in a certain angular range by the coupling 52, and the rotating shaft 53 drives the upper electrode plate 3 connected to the connecting shaft 4 to rotate.

When the upper electrode plate 3 is rotated into the second sub-cavity 12, the upper electrode plate 3 is opposed to the susceptor 2, and the process gas is transported to the pedestal from the gas passage formed by the air inlet 311, the air flow passage 312 and the air outlet 313. 2, is ionized into a plasma, and the plasma treats the workpiece 8 to be bombarded to realize a pre-cleaning process; when the upper electrode plate 3 is rotated into the first sub-cavity 11, the upper electrode plate 3 is separated from the top of the pedestal 2 The heat source 13 is turned on to heat the workpiece 8 to be processed, and the vacuum pump is turned on to evacuate the cavity 1 to realize a degassing process of the workpiece 8 to be processed.

A specific embodiment in which the position of the upper electrode plate is moved between the pre-cleaning process position and the degassing process position by the flipping method will be described in detail below with reference to FIGS. 8 and 9.

As shown in FIG. 8 and FIG. 9, the process chamber provided by the embodiment includes a cavity 1, a base 2, an upper electrode plate 3, a turning mechanism 10, and a heat source 13. The upper electrode plate 3 is movably connected to the turning mechanism 10, and can be turned over from the pre-cleaning process position to the degassing process position or from the degassing process position to the pre-cleaning process position by the turning mechanism 10, when the upper electrode Board 3 is in pre-cleaning In the process position, the upper electrode plate 3 is located between the heat source 13 and the susceptor 2, that is, the upper electrode plate 3 is directly opposed to the pedestal region to perform the workpiece 8 to be processed by the process gas from the gas passage of the upper electrode plate 3. The pre-cleaning process; when the upper electrode plate 3 is in the degassing process position, the upper electrode plate 3 is offset from the pedestal region, and the heat source 13 is directly opposed to the pedestal region, and the workpiece 8 to be processed is subjected to a degassing process.

In practical applications, the working principle of the turning mechanism 10 is similar to the flipping action principle of the flip phone. As for the structure of the upper electrode plate 3 itself, the gas supply mode of the upper electrode plate 3 to the susceptor 2, and the gas supply mode of the gas source to the upper electrode plate 3, the embodiment shown in FIGS. 2 to 7 in a rotating manner can be employed. The structure and manner of this will not be repeated here.

As shown in FIG. 10 and FIG. 11, the process chamber provided by the embodiment includes: a cavity 1, a susceptor 2, an upper electrode plate 3, a translation mechanism such as a slide rail 111, and a heat source 13, and on the side of the cavity 1 The wall is provided with a first sub-cavity 11 communicating therewith, the slide rail 111 extending from the interior of the cavity 1 to the first sub-cavity 11, and the upper electrode plate 3 is slidable on the slide rail 111 for pre-cleaning process position Moving to the degassing process position or moving from the degassing process position to the pre-cleaning process position, when the upper electrode plate 3 is in the pre-cleaning process position, the upper electrode plate 3 is located between the heat source 13 and the susceptor 2, ie, the upper electrode plate 3 directly opposite to the pedestal region to perform a pre-cleaning process on the workpiece 8 to be processed by means of a process gas from the gas channel of the upper electrode plate 3; when the upper electrode plate 3 is in the degassing process position, the upper electrode plate 3 is offset from the base In the seating area, the heat source 13 is directly opposite to the pedestal area, and the workpiece 8 to be processed is subjected to a degassing process.

In practical applications, the working principle of the slide rail 111 is similar to the slide motion principle of the slide phone. In practical applications, the position change of the upper electrode plate 3 can be, for example, a traction method or a combination of traction and spring. When the traction mode is adopted, for example, a fixed pulley may be disposed on each of the left and right sides of the upper electrode plate 3, and a traction rope (left traction rope) is connected to the left side of the upper electrode plate 3 and bypasses the fixed pulley on the left side. And extending along the support mechanism 112 to the outside of the cavity 1, another traction rope (right traction rope) is connected to the right side of the upper electrode plate 3 and bypasses the fixed pulley on the right side and extends along the support mechanism 112 to The exterior of the cavity 1. In practical applications, the left traction can be pulled according to the process requirements. The rope moves the upper electrode plate 3 to the left side along the slide rail 111 to the pre-cleaning process position; the right traction rope is pulled to move the upper electrode plate 3 to the right side along the slide rail 111 to the degassing process position. When a combination of traction and spring is employed, for example, a fixed pulley may be disposed on the left side of the upper electrode plate 3, and a traction rope (left traction rope) is connected to the left side of the upper electrode plate 3 and bypasses the left side. The pulley extends along the support mechanism 112 to the outside of the cavity 1, and a spring is disposed on the right side of the upper electrode plate 3. One end of the spring is fixed to the right end surface of the upper electrode plate 3, and the other end is fixed to the right of the slide rail 111. When the side is fixed on the side wall of the second sub-cavity 11, and the spring is at a free length, it can make the upper electrode plate 3 in the degassing process position, and the upper electrode plate 3 can be driven by pulling the traction rope. The drawing is performed and the upper electrode plate 3 is placed in the pre-cleaning process position.

As for the structure of the upper electrode plate 3 itself, the gas supply mode of the upper electrode plate 3 to the susceptor 2, and the gas supply mode of the gas source to the upper electrode plate 3, the embodiment shown in FIGS. 2 to 7 in a rotating manner can be employed. The structure and manner of this will not be repeated here. It is of course understood that the support mechanism 112 can be used to support the slide rail 111 and the upper electrode plate 3, and can also serve as a channel carrier for the gas supply of the gas plate to the upper electrode plate 3.

It should be noted that, in practical applications, the cavity 1 may be set large enough not to be provided with the first sub-cavity 11 so as to be able to accommodate the pre-cleaning position and the degassing process position of the upper electrode plate 3.

In another aspect, the present invention also provides a semiconductor processing apparatus comprising the process chamber provided by any of the above embodiments of the present invention.

The semiconductor processing apparatus provided by the present invention includes the process chamber provided by the foregoing embodiments of the present invention, wherein the position of the upper electrode plate 3 can be changed between the pre-cleaning process position and the degassing process position according to the process requirements, that is, When the upper electrode plate 3 is in the degassing process position, the upper electrode plate 3 is deviated from the area of the susceptor 2 to perform a degassing process on the workpiece to be processed; when the upper electrode plate 3 is in the pre-cleaning process position, the upper electrode plate 3 and the base are The area of the seat 2 is directly opposite, and the process gas is directly delivered to the top of the susceptor 2 by means of the upper electrode plate 3 with a gas passage for the pre-cleaning process. Since the process gas does not enter the chamber from the lower region of the chamber during the pre-cleaning process, it is not directly pumped away by the vacuum pump located below the chamber, so there is no need to replenish a large amount of process gas to maintain the plasma. The excited state of the body, therefore, the semiconductor processing apparatus provided by the present invention can improve the utilization rate of process gases and reduce the consumption and waste of process gases. In addition, the path length of the process gas outputted through the gas passage of the upper electrode plate 3 to the workpiece to be processed is substantially the same. Therefore, by using the semiconductor processing apparatus of the present invention, the plasma energy generated by the process gas excitation is substantially uniform, and is waiting The plasma in the upper region of the treated workpiece 8 is stabilized, so that the effect of pre-cleaning can be improved.

While the invention has been described in detail with reference to the preferred embodiments of the present invention, it is understood that It will be appreciated by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims

a process chamber for degassing and pre-cleaning a workpiece to be processed, the chamber comprising: a cavity, an upper electrode plate, a heat source disposed at a top of the cavity, and disposed in the a pedestal at the bottom of the cavity, the pedestal for carrying the workpiece to be processed; wherein the heat source is disposed opposite to the pedestal region;

a gas passage is disposed in the upper electrode plate and the position of the upper electrode plate is movable between a pre-cleaning process position and a degassing process position;

Where the upper electrode plate is in the pre-cleaning process position, the upper electrode plate is located between the heat source and the base, and the upper electrode plate is directly opposite to the base region to a process gas from the gas delivery passage performs a pre-cleaning process on the workpiece to be processed;

Where the upper electrode plate is in the degassing process position, the upper electrode plate is offset from the pedestal region, and the heat source is directly opposite to the pedestal region to perform the workpiece to be processed Degassing process.
The process chamber of claim 1 wherein said upper electrode plate comprises an electrode plate body;

The electrode plate body is provided with an air inlet, an air flow channel and an air outlet, and the air flow channel communicates with the air inlet and the air outlet;

The process gas enters the air flow passage from the air inlet and flows out of the electrode plate body from the air outlet.
The process chamber according to claim 2, wherein the electrode plate body is disc-shaped;

The air flow channel is disposed inside the electrode plate body;

The air inlet is disposed on a sidewall of the electrode plate body in a thickness direction;

The air outlet is disposed on a surface of the electrode plate body opposite to the base.
The process chamber according to claim 2, wherein the upper electrode plate further comprises an electrode flow plate, and the electrode flow plate is provided with a flow hole;

The electrode shimming plate is disposed under the electrode plate body, and an orthographic projection on a lower surface of the electrode plate body covers the air outlet;

a flow chamber is formed between the electrode flow plate and the electrode plate body, and the process gas enters the flow chamber from the air outlet and is transported to the base region through the flow hole Above.
The process chamber according to claim 4, wherein said upper electrode plate further comprises an adjusting member, said adjusting member being disposed between said electrode plate main body and said electrode shimming plate for adjusting a distance between the electrode plate body and the electrode plater;

The electrode plate body, the adjusting member and the electrode smoothing plate constitute the flow mixing chamber.
A process chamber according to any one of claims 1 to 5, wherein the process chamber further includes an inverting mechanism coupled to the upper electrode plate and the upper electrode plate is turned by a flipping action The position moves between the pre-cleaning process position and the degassing process position.
A process chamber according to any one of claims 1 to 5, wherein the process chamber further includes a translation mechanism coupled to the upper electrode plate and the upper electrode plate is moved by a translational action The position moves between the pre-cleaning process position and the degassing process position.
A process chamber according to any one of claims 1 to 5, wherein the process chamber further comprises a connecting shaft and a rotating mechanism;

One end of the connecting shaft is fixedly connected to the upper electrode plate, and the other end is connected to the rotating mechanism, and the rotating mechanism drives the connecting shaft to drive the upper electrode plate to rotate;

A first intake passage is disposed in the connecting shaft, and the process gas is delivered to the upper electrode plate through the first intake passage.
The process chamber of claim 8 wherein said rotating mechanism comprises a oscillating cylinder, a coupling and a rotating shaft, wherein

The swinging cylinder is connected to one end of the rotating shaft through the coupling, the other end of the rotating shaft is connected to the connecting shaft, and the swinging cylinder drives the rotating shaft to drive the connecting shaft to rotate;

A second intake passage is disposed in the rotating shaft, and the second intake passage is in communication with the first intake passage.
A process chamber according to claim 9, wherein said chamber further comprises an intake pipe disposed outside said rotating mechanism and in communication with said second intake passage;

The process gas is input to the first intake passage after flowing through the second intake passage from the intake pipe.
The process chamber of claim 8 wherein said connecting shaft is located within said cavity and through a bottom wall of said cavity, said rotating mechanism being located outside of a bottom wall of said cavity;

A level adjustment mechanism is further disposed between the bottom wall and the rotating mechanism for adjusting the level of the upper electrode plate.
The process chamber of claim 11 wherein said leveling mechanism comprises a plurality of adjustment rods and webs, wherein

The connecting plate is disposed between the bottom wall and the rotating mechanism, and is connected to the rotating mechanism;

The connecting shaft passes through the connecting plate, and the connecting plate has a certain distance from the bottom wall;

One end of the adjusting rod is fixedly connected to the bottom wall, the other end passes through the connecting plate, and the length of the connecting rod is adjustable through the connecting plate;

Adjusting the levelness of the connecting plate by adjusting the length of the adjusting rod through the connecting plate, the adjusting plate drives the rotating mechanism to adjust the perpendicularity of the connecting shaft, thereby realizing the electrode The level of the board is adjusted.
The process chamber of claim 12 wherein said leveling mechanism further comprises a telescoping tube;

The telescopic tube is sleeved outside the connecting shaft, and a first end thereof is sealingly connected to the bottom wall, and a second end is sealingly connected to the connecting plate.
The process chamber of claim 8 wherein said cavity comprises a first sub-cavity and a second sub-cavity, wherein

The first sub-cavity is disposed on a sidewall of the second sub-cavity and communicates with the second sub-cavity; wherein the pedestal is disposed in the second sub-cavity; The position of the upper electrode plate can be changed between the first sub-cavity and the second sub-cavity;

When the upper electrode plate moves into the second sub-cavity, the upper electrode plate is in the pre-cleaning process position;

The upper electrode plate is in the degassing process position when the electrode plate moves into the first sub-cavity.
A semiconductor processing apparatus comprising the process chamber of any of claims 1-12.