KR19990005345A - Manufacturing method of thin film type optical path control device - Google Patents

Abstract

The present invention provides a driving substrate including M x N (M, N is an integer) transistors in a matrix form and including a drain pad, forming a protective layer on the driving substrate, and Forming an etch stop layer at a low temperature on the top of the layer by a sputtering method, forming a sacrificial layer to expose the etch stop layer of a portion where the drain pad is formed on the etch stop layer, and a top of the exposed etch stop layer And forming a membrane on top of the sacrificial layer, forming a lower electrode on top of the membrane, forming and heat treating a strained layer on top of the lower electrode, and forming an upper electrode on top of the strained layer. And patterning the upper electrode into a predetermined shape, and sequentially patterning the strained layer, the lower electrode, and the membrane, and then removing the sacrificial layer. .

Description

Manufacturing method of thin film type optical path control device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film type optical path control device, and more particularly, to a method of manufacturing a thin film type optical path control device capable of preventing damages caused by high temperatures in the process of forming transistors embedded in a driving substrate. .

In general, a spatial light modulator, which is an apparatus for projecting optical energy onto a screen, may be variously applied to optical communication, image processing, and information display apparatus. Such devices are classified into a direct view type image display device and a projection type image display device according to a method of projecting a light beam incident from a light source onto a screen. The direct view image display device includes a CRT (Cathod Ray Tube), and the projection image display device includes a liquid crystal display (hereinafter referred to as an LCD), a DMD (deformable mirror device), or an AMA (Actuated). Mirror Arrays).

The above-described CRT apparatus is an excellent display apparatus which is guaranteed an average brightness of 100 ft-L (white display) or more, a contrast ratio of 30: 1 or more, a lifetime of 10,000 hours or more. However, since the CRT has a large weight and volume and maintains high mechanical strength, it is difficult to make the screen completely flat, which causes distortion of the peripheral part. In addition, since CRTs excite phosphors with an electron beam to emit light, there is a problem that a high voltage is required to produce an image.

Therefore, LCDs have been developed to solve the above-mentioned problems of CRT. The advantages of such LCDs are explained in comparison with CRTs. LCDs operate at low voltages, consume less power, and provide images without distortion.

However, despite the above-mentioned advantages, the LCD has a low light efficiency of 1 to 2% due to the polarization of the light beam, and there is a problem that the response speed of the liquid crystal material therein is slow.

Accordingly, in order to solve the problems of the LCD as described above, a device such as a DMD or an AMA has been developed. Currently, AMA can achieve a light efficiency of 10% or more, while DMD has a light efficiency of about 5%. In addition, the AMA is not only affected by the polarity of the incident luminous flux but also does not affect the polarity of the luminous flux.

Typically, the respective actuators formed inside the AMA cause deformation depending on the electric field generated by the applied image signal and bias voltage. When this actuator causes deformation, each of the mirrors mounted on top of the actuator is inclined in proportion to the magnitude of the electric field.

Thus, these inclined mirrors can reflect light incident from the light source at a predetermined angle. Piezoelectric ceramics such as PZT (Pb (Zr, Ti) O ₃ ), or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as a constituent material of the actuator for driving the respective mirrors. As the constituent material of this actuator, electrodistorted ceramics such as PMN (Pb (Mg, Nb) O ₃ ) can be used.

The AMA is classified into a bulk type and a thin film type. Currently, AMA is the main trend of the thin-film optical path control device.

1 is a plan view of a conventional thin film type optical path control device.

Referring to FIG. 1, one side of the membrane 70 has a rectangular concave portion at a central portion thereof, and the concave portion is formed in a stepped shape toward both edges. The other side of the membrane 70 has a rectangular protrusion that narrows stepwise toward the central portion corresponding to the concave portion. Therefore, the concave portions of the membrane 70 are fitted with the rectangular protrusions of the adjacent membranes, and the rectangular protrusions are fitted with the concave portions of the adjacent membranes.

FIG. 2 is a cross-sectional view of the apparatus shown in FIG. 1 taken along line A-A '.

Referring to FIG. 2, the apparatus for controlling a thin film type optical path includes a driving substrate 10 having a drain pad 20 formed on one side thereof, and an actuator 140 formed thereon.

M × N (M, N is an integer) transistors are embedded in the drive substrate 10 in a matrix form. In addition, the driving substrate 10 may include a protective layer 30 and an etch stop layer 40.

The actuator 140 is formed such that one side of the etch stop layer 40 is in contact with a portion where the drain pad 20 is formed, and the other side is parallel to the etch stop layer 40 through an air gap 60. (membrane: 70), the lower electrode 80 formed on the membrane 70, the strained layer 90 formed on the lower electrode 80, the upper electrode 100 formed on the strained layer 90, From the other side of the stripe 110 and the deformable layer 90 formed on a predetermined portion of the upper electrode 100, the drain pads may be formed through the lower electrode 80, the membrane 70, the etch stop layer 40, and the protective layer 30. A distribution hole 120 vertically formed up to 20, and a distribution unit 130 formed to electrically connect the lower electrode 80 and the drain pad 20 to each other in the distribution hole 120.

Hereinafter, the manufacturing method of the above-mentioned thin film type optical path control apparatus is demonstrated with reference to drawings.

3A to 3C are manufacturing process diagrams of the apparatus shown in FIG. 2. 3A to 3C, the same reference numerals are used for the same members as in FIG.

Referring to FIG. 3A, a protective layer made of Phospho-Silicate Glass (PSG) is formed on an upper portion of a driving substrate 10 having M × N transistors embedded in a matrix and having a drain pad 20 formed on one side thereof. 30 is formed.

The protective layer 30 is formed to have a thickness of about 1.0 to 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 30 protects the drive substrate 10 during subsequent processing.

The etch stop layer 40 is formed of nitride (Si ₃ N ₄ ) on the protective layer 30. The etch stop layer 40 is formed to a thickness of about 1000 to 2000 kPa by a low pressure chemical vapor deposition (LPCVD) method, and the deposition temperature is 800 ° C. The etch stop layer 40 prevents the protective layer 30 and its lower portion from being damaged during the subsequent etching process. However, the transistor embedded in the driving substrate 10 may be damaged due to the high deposition temperature in the process of forming the etch stop layer 40.

The sacrificial layer 50 is formed on the etch stop layer 40. The sacrificial layer 50 is formed of phosphorus silicate glass (PSG) having a high concentration of phosphorus (PG) to a thickness of about 1.0 to 2.0 μm by an atmospheric pressure chemical vapor deposition method. In this case, since the surface flatness is very poor, the sacrificial layer 50 is planarized by using spin on glass (SOG) or chemical mechanical polishing (CMP). Subsequently, a portion of the sacrificial layer 50 in which the drain pad 20 is formed is etched to expose a portion of the etch stop layer 40.

Referring to FIG. 3B, the membrane 70 is formed on the exposed etch stop layer 40 and on the sacrificial layer 50. The membrane 70 is formed to have a thickness of about 0.1 to 1.0 μm of nitride by low pressure chemical vapor deposition.

The lower electrode 80 is formed of platinum (Pt) or tantalum (Ta) on the membrane 70. The lower electrode 80 is formed to a thickness of about 500 to 2000 micrometers by a sputtering method. The lower electrode 80 is a signal electrode and receives an image signal from the transistor embedded in the driving substrate 10 via the drain pad 20 and the distributor 130.

The strained layer 90 is formed of PZT or PZLT, which is a piezoelectric material, on the lower electrode 80. The strained layer 90 is formed to have a thickness of 0.1 μm to 1.0 μm by a sol-gel method. Subsequently, the strained layer 90 is thermally transformed by rapid thermal annealing (RTA).

The upper electrode 100 is formed on one side of the strained layer 90. The upper electrode 100 is formed to have a thickness of about 500 to 2000 micrometers by sputtering of aluminum or platinum, which is a metal having excellent electrical conductivity and reflectivity. The upper electrode 100 is applied with a bias voltage as a common electrode to generate an electric field between the lower electrode 80 and the upper electrode 100. Therefore, the strained layer 90 is deformed in proportion to the magnitude of the electric field described above to change the path of the light beam through which the upper electrode 100 is incident from the light source.

The stripe 110 is formed in the center by patterning the upper electrode 100. The stripe 110 uniformly operates the upper electrode 100 to prevent the incident light beam from being diffusely reflected.

Referring to FIG. 3C, after the upper electrode 100 is patterned into a predetermined shape, the distribution hole 120 is formed from the upper side of the strain pad 90 to the upper side of the drain pad 20 from the other side of the strain layer 90. 80, the membrane 70, the etch stop layer 40, and the protective layer 30 are sequentially etched to form a vertical portion from the strained layer 90 to the drain pad 20.

The distributor 130 is formed by sputtering a metal such as tungsten, platinum or titanium in the distribution hole 120 to electrically connect the drain pad 20 and the lower electrode 80. Therefore, the distributor 130 is vertically formed from the lower electrode 80 to the upper portion of the drain pad 20 in the distribution hole 120.

Subsequently, the strained layer 90, the lower electrode 80, and the membrane 70 are sequentially patterned, and then the sacrificial layer 50 is removed with hydrofluoric acid gas to form an air gap 60.

As described above, in the conventional thin film type optical path control device, the etch stop layer 40 is formed of nitride by a low pressure chemical vapor deposition method. However, when the etch stop layer 40 is formed by a low pressure chemical vapor deposition method, a high temperature process of 800 ° C is involved, which causes a problem that the transistor embedded in the driving substrate 10 is damaged by high temperature.

The present invention has been made to solve the conventional problems as described above, the present invention is a method of manufacturing a thin film type optical path control apparatus that can prevent the transistor embedded in the driving substrate to be damaged by forming an etch stop layer at a low temperature. The purpose is to provide.

In order to achieve the above object, the present invention provides a step of providing a driving substrate in which the M × N (M, N is an integer) transistor is built in a matrix form and includes a drain pad, and the upper portion of the driving substrate Forming a protective layer on the protective layer, forming an etch stop layer at a low temperature on the top of the passivation layer by sputtering, and forming a sacrificial layer to expose the etch stop layer of a portion where the drain pad is formed on the etch stop layer. Forming a membrane on top of the exposed etch stop layer and on the sacrificial layer, forming a lower electrode on top of the membrane, forming and heat-treating a strained layer on top of the lower electrode; Forming an upper electrode on the strained layer, patterning the upper electrode into a predetermined shape, and sequentially patterning the strained layer, the lower electrode, and the membrane After, a step of removing the sacrificial layer.

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

1 is a plan view of a conventional thin film type optical path control device,

FIG. 2 is a cross-sectional view taken along line AA ′ of the apparatus of FIG. 1; FIG.

3a to 3c is a manufacturing process diagram of the device shown in FIG.

4 is a plan view of a thin film type optical path control apparatus according to the present invention,

5 is a cross-sectional view taken along line B-B 'of the apparatus of FIG. 4;

6A to 6C are manufacturing process diagrams of the apparatus shown in FIG.

* Explanation of symbols for main parts of the drawings

510: driving substrate 520: drain pad

530: protective layer 540: etching prevention layer

550: sacrificial layer 560: air gap

570: membrane 580: lower electrode

590 strain layer 600 upper electrode

610: stripe 620: power distribution hole

630: distributor 640: actuator

Hereinafter, with reference to the accompanying drawings will be described in detail the thin-film optical path control apparatus according to the present invention.

4 is a plan view of a conventional thin film type optical path control device.

Referring to FIG. 4, one side of the membrane 570 has a rectangular concave portion at a central portion thereof, and the concave portion is formed in a stepped shape toward both edges. The other side of the membrane 570 has a rectangular protrusion that narrows stepwise toward the central portion corresponding to the concave portion. Therefore, the concave portions of the membrane 570 are fitted with the rectangular protrusions of the adjacent membranes, and the rectangular protrusions are fitted with the concave portions of the adjacent membranes.

FIG. 5 is a cross-sectional view of the apparatus shown in FIG. 4 taken along line B-B '.

Referring to FIG. 5, the thin film type optical path control apparatus includes a driving substrate 510 having a drain pad 520 formed on one side thereof, and an actuator 640 formed thereon.

Inside the driving substrate 510, M × N transistors (M and N are integers) are built in a matrix. In addition, the driving substrate 510 includes a protective layer 530 and an etch stop layer 540.

The actuator 640 has a membrane 570 and a membrane formed on one side of the etch stop layer 540 in contact with a portion where the drain pad 520 is formed, and the other side thereof is parallel to the etch stop layer 540 through an air gap. The lower electrode 580 formed on the upper portion of the 570, the strained layer 590 formed on the lower electrode 580, the upper electrode 600 formed on the strained layer 590, and a predetermined portion of the upper electrode 600. A distribution hole formed from the other side of the stripe 610 and the strained layer 590 formed by patterning the drain electrode 580 through the lower electrode 580, the membrane 570, the etch stop layer 540, and the protective layer 530. 620 and a distribution 630 formed in the distribution hole 620 so that the lower electrode 580 and the drain pad 520 are electrically connected to each other.

Hereinafter, the manufacturing method of the above-mentioned thin film type optical path control apparatus is demonstrated with reference to drawings.

6A to 6D are manufacturing process diagrams of the apparatus shown in FIG. 5. 6A to 6D, the same reference numerals are used for the same members as in FIG.

Referring to FIG. 6A, a protective layer 530 including silicate glass is formed on a driving substrate 510 having M × N transistors embedded in a matrix and having a drain pad 520 formed on one side thereof.

The protective layer 530 is formed to have a thickness of about 1.0 to 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 530 protects the driving substrate 510 during the subsequent process.

The etch stop layer 540 is formed on the upper portion of the protective layer 530 by sputtering aluminum nitride (AlN) that is not damaged by hydrofluoric acid gas. At this time, the deposition temperature of the etch stop layer 540 is 150 ℃ and is formed to a thickness of about 1000 ~ 2000Å. The etch stop layer 540 prevents the protective layer 530 and its lower portion from being damaged during the subsequent etching process. As described above, since the etch stop layer 540 is formed at a low temperature process, the transistor embedded in the driving substrate 510 is not damaged by heat.

The sacrificial layer 550 is formed on the etch stop layer 540. The sacrificial layer 550 is formed of phosphorus silicate glass having a high concentration of phosphorus (P) to a thickness of about 1.0 to 2.0 μm by an atmospheric pressure chemical vapor deposition method. In addition, since the surface flatness is very poor, the sacrificial layer 550 is planarized by using spin on glass (SOG) or chemical mechanical polishing (CMP). Subsequently, a portion of the sacrificial layer 550 in which the drain pad 520 is formed is etched to expose a portion of the etch stop layer 540.

Referring to FIG. 6B, the membrane 570 is formed on the exposed etch stop layer 540 and on the sacrificial layer 550. The membrane 570 is formed to have a thickness of about 0.1 to 1.0 μm of nitride by a low pressure chemical vapor deposition method.

The lower electrode 580 is formed of platinum or tantalum, which is a metal having excellent electrical conductivity, on the membrane 570. The lower electrode 580 is formed to a thickness of about 500 to 2000 micrometers by a sputtering method. The lower electrode 580 is a signal electrode and receives an image signal from the transistor embedded in the driving substrate 510 via the drain pad 520 and the distributor 630.

Referring to FIG. 6C, the strained layer 590 is formed of PZT or PZLT, which is a piezoelectric material, on the lower electrode 580. The strained layer 590 is formed to have a thickness of 0.1 μm to 1.0 μm by a sol-gel method. Subsequently, the strained layer 590 is thermally transformed by rapid thermal annealing (RTA).

The upper electrode 600 is formed on one side of the strained layer 590. The upper electrode 600 is formed to have a thickness of about 500 to 2000 micrometers by sputtering of aluminum or platinum, which is a metal having excellent electrical conductivity and reflective properties. The upper electrode 600 is applied with a bias voltage as a common electrode to generate an electric field between the lower electrode 580 and the upper electrode 600. Accordingly, the strained layer 590 is deformed in proportion to the magnitude of the electric field described above to change the path of the light beam through which the upper electrode 600 is incident from the light source.

The stripe 610 is formed at the center by patterning the upper electrode 600. The stripe 610 operates the upper electrode 600 uniformly to prevent the incident light beam from being diffusely reflected.

Referring to FIG. 6D, after the upper electrode 600 is patterned into a predetermined shape, the distribution hole 620 is formed from the upper side of the strain pad 520 to the upper side of the drain pad 520 from the other side of the strained layer 590. The 580, the membrane 570, the etch stop layer 540, and the protective layer 530 are sequentially etched to form a vertical portion from the strained layer 590 to the drain pad 520.

The distributor 630 is formed by sputtering a metal such as tungsten, platinum or titanium in the distribution hole 620 to electrically connect the drain pad 520 and the lower electrode 580. Accordingly, the power distribution 630 is vertically formed from the lower electrode 580 to the top of the drain pad 520 in the distribution hole 620.

Subsequently, the strained layer 590, the lower electrode 580, and the membrane 570 are sequentially patterned, and then the sacrificial layer 550 is removed with hydrofluoric acid to form an air gap 560.

As described above, after the device of the thin film type AMA is completed, platinum-tantalum (Pt-Ta) is deposited on the lower end of the driving substrate 510 using a sputtering method to form an ohmic contact (not shown).

Next, after applying a photoresist (not shown) on the driving substrate 510, a tape carrier package for applying a bias voltage to the upper electrode 600 and an image signal to the lower electrode 580. (Not shown) The driving substrate 510 is cut to have a predetermined thickness in preparation for bonding.

Subsequently, the pad portion of the AMA panel is etched using a dry etching method to expose the pad (not shown) of the AMA panel required for TCP bonding.

As described above, the driving substrate 510 on which the thin film type AMA element is formed is completely cut into a predetermined shape, and then the pad of the AMA panel and the TCP are connected to complete the manufacture of the thin film type AMA module.

As described above, since the thin film type optical path control device according to the present invention forms the etch stop layer by a low temperature process, the transistor embedded in the driving substrate is not damaged.

As described above, although the present invention has been described with reference to the drawings, those skilled in the art may variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. I can understand that you can.

Claims (4)

Providing a driving substrate 510 having M × N (M, N is an integer) transistors embedded in a matrix and including a drain pad 520, and a protective layer on the driving substrate 510. Forming a 530, forming an etch stop layer 540 on the upper portion of the protective layer 530 at a low temperature by sputtering, and forming a drain pad 520 on the etch stop layer 540. Forming a sacrificial layer 550 to expose the etch stop layer 540 of the formed portion; and forming a membrane 570 on the exposed etch stop layer 540 and on the sacrificial layer 550. Forming a layer, forming a lower electrode 580 on the membrane 570, forming a heat treatment layer 590 on the lower electrode 580, and performing heat treatment. Forming an upper electrode 600 on the upper portion of the 590, and forming the upper electrode 600 in a predetermined shape. And patterning the strain layer 590, the lower electrode 580, and the membrane 570 sequentially, and then removing the sacrificial layer 550. Manufacturing method. The method of claim 1, wherein the etch stop layer (540) is made of aluminum nitride (AlN). The method of claim 1, wherein the protective layer 530 is formed of phosphorus silicate glass, and the sacrificial layer 550 is formed of phosphorus silicate glass having a high concentration of phosphorus (P), and the membrane 570 is formed of nitride. The lower electrode 580 is formed of a material having good electrical conductivity, the strained layer 590 is formed of a piezoelectric material, and the upper electrode 600 is formed of excellent electrical conductivity and reflection characteristics. The manufacturing method of the thin film type optical path control apparatus. The method of claim 1, wherein the deposition temperature of the etch stop layer (540) is 150 ℃.