KR19990005301A - Manufacturing method of thin film type optical path control device - Google Patents

Abstract

The present invention provides a driving substrate including M × N (M, N is an integer) transistors embedded in a matrix and including a drain pad, forming a protective layer on the driving substrate, Forming an etch stop layer on top, forming a sacrificial layer on top of the etch stop layer, exposing a portion of the sacrificial layer where a drain pad is formed to expose a portion of the etch stop layer, and exposing Forming a membrane on top of the etch stop layer and on the sacrificial layer, forming a lower electrode on the membrane, heat treating the lower electrode, and forming a strained layer on the lower electrode and performing heat treatment. Forming an upper electrode on the strained layer, patterning the upper electrode into a predetermined shape, and sequentially forming the strained layer, the diffusion barrier layer, the lower electrode, and the membrane. It is patterned after, a step of removing the sacrificial layer.

Description

Manufacturing method of thin film type optical path control device

The present invention relates to a method for manufacturing a thin film type optical path control device, and more particularly, to a method for manufacturing a thin film type optical path control device capable of uniformly forming a lower electrode by preventing the lead (Pb) component of the strained layer from diffusing to the lower electrode. will be.

In general, a spatial light modulator, which is an apparatus for projecting optical energy onto a screen, may be variously applied to optical communication, image processing, and information display apparatus. Such devices are classified into a direct view type image display device and a projection type image display device according to a method of projecting a light beam incident from a light source onto a screen. The direct view image display device includes a CRT (Cathod Ray Tube), and the projection image display device includes a liquid crystal display (hereinafter referred to as an LCD), a DMD (deformable mirror device), or an AMA (Actuated). Mirror Arrays).

The above-described CRT apparatus is an excellent display apparatus which is guaranteed an average brightness of 100 ft-L (white display) or more, a contrast ratio of 30: 1 or more, a lifetime of 10,000 hours or more. However, since the CRT has a large weight and volume and maintains high mechanical strength, it is difficult to make the screen completely flat, which causes distortion of the peripheral part. In addition, since CRTs excite phosphors with an electron beam to emit light, there is a problem that a high voltage is required to produce an image.

Therefore, LCDs have been developed to solve the above-mentioned problems of CRT. The advantages of such LCDs are explained in comparison with CRTs. LCDs operate at low voltages, consume less power, and provide images without distortion.

However, despite the above-mentioned advantages, the LCD has a low light efficiency of 1 to 2% due to the polarization of the light beam, and there is a problem that the response speed of the liquid crystal material therein is slow.

Accordingly, in order to solve the problems of the LCD as described above, a device such as a DMD or an AMA has been developed. Currently, AMA can achieve a light efficiency of 10% or more, while DMD has a light efficiency of about 5%. In addition, the AMA is not only affected by the polarity of the incident luminous flux but also does not affect the polarity of the luminous flux.

Typically, the respective actuators formed inside the AMA cause deformation depending on the electric field generated by the applied image signal and bias voltage. When this actuator causes deformation, each of the mirrors mounted on top of the actuator is inclined in proportion to the magnitude of the electric field.

Thus, these inclined mirrors can reflect light incident from the light source at a predetermined angle. Piezoelectric ceramics such as PZT (Pb (Zr, Ti) O ₃ ), or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as a constituent material of the actuator for driving the respective mirrors. As the constituent material of this actuator, electrodistorted ceramics such as PMN (Pb (Mg, Nb) O ₃ ) can be used.

The AMA is classified into a bulk type and a thin film type. Currently, AMA is the main trend of the thin-film optical path control device.

1 is a plan view of a conventional thin film type optical path control device.

Referring to FIG. 1, one side of the membrane 70 has a rectangular concave portion at a central portion thereof, and the concave portion is formed in a stepped shape toward both edges. The other side of the membrane 70 has a rectangular protrusion that narrows stepwise toward the central portion corresponding to the concave portion. Therefore, the concave portion of the membrane 70 is fitted with the rectangular protrusion of the adjacent membrane, and the rectangular protrusion is fitted with the concave portion of the adjacent membrane.

FIG. 2 is a cross-sectional view of the apparatus shown in FIG. 1 taken along line A-A '.

Referring to FIG. 2, the apparatus for controlling a thin film type optical path includes a driving substrate 10 having a drain pad 20 formed on one side thereof, and an actuator 140 formed thereon.

M × N (M, N is an integer) transistors are embedded in the drive substrate 10 in a matrix form. In addition, the driving substrate 10 may include a protective layer 30 formed on the upper and drain pads 20 and an etch stop layer 40 formed on the driving substrate 10.

The actuator 140 is formed such that one side of the etch stop layer 40 is in contact with a portion where the drain pad 20 is formed, and the other side is parallel to the etch stop layer 40 through an air gap 60. (membrane: 70), the lower electrode 80 formed on the membrane 70, the strained layer 90 formed on the lower electrode 80, the upper electrode 100 formed on the strained layer 90, From the other side of the stripe 110 and the deformable layer 90 formed on a predetermined portion of the upper electrode 100, the drain pads may be formed through the lower electrode 80, the membrane 70, the etch stop layer 40, and the protective layer 30. 20 includes a distribution hole 120 formed up to 20, and a distribution panel 130 formed to electrically connect the lower electrode 80 and the drain pad 20 to each other in the distribution hole 120.

Hereinafter, the manufacturing method of the above-mentioned thin film type optical path control apparatus is demonstrated with reference to drawings.

3A to 3D are manufacturing process diagrams of the apparatus shown in FIG. 2. 3A to 3D, the same reference numerals are used for the same members as in FIG.

Referring to FIG. 3A, a protective layer made of Phospho-Silicate Glass (PSG) is formed on an upper portion of a driving substrate 10 having M × N transistors embedded in a matrix and having a drain pad 20 formed on one side thereof. 30 is formed.

The protective layer 30 is formed to have a thickness of about 1.0 to 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 30 protects the drive substrate 10 during subsequent processing.

The etch stop layer 40 is formed of nitride on the protective layer 30. The etch stop layer 40 is formed to a thickness of about 1000 to 2000 kPa by a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 40 prevents the protective layer 30 and its lower portion from being damaged during the subsequent etching process.

The sacrificial layer 50 is formed on the etch stop layer 40. The sacrificial layer 50 is formed of a phosphorous silicate glass (PSG) having a high concentration of phosphorus (PG) to a thickness of about 1.0 to 2.0 μm by an Atmospheric Pressure CVD (APCVD) method. In this case, since the sacrificial layer 50 covers the upper portion of the driving substrate 10 in which the transistor is embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer 50 is planarized by a method using spin on glass (SOG) or a method using chemical mechanical polishing (CMP). Subsequently, a portion of the sacrificial layer 50 in which the drain pad 20 is formed is etched to expose a portion of the etch stop layer 40.

Referring to FIG. 3B, the membrane 70 is formed on the exposed etch stop layer 40 and on the sacrificial layer 50. The membrane 70 is formed to have a thickness of about 0.1 to 1.0 μm of nitride by low pressure chemical vapor deposition.

The lower electrode 80 is formed of platinum (Pt) or tantalum (Ta) on the membrane 70. The lower electrode 80 is formed to a thickness of about 500 to 2000 micrometers by a sputtering method. The lower electrode 80 is a signal electrode and receives an image signal from the transistor embedded in the driving substrate 10 via the drain pad 20 and the distributor 130.

Referring to FIG. 3C, the strained layer 90 is formed of PZT or PLZT, which is a piezoelectric material, on the lower electrode 80. The strained layer 90 is formed to have a thickness of 0.1 μm to 1.0 μm by a sol-gel method. Subsequently, the strained layer 90 is thermally transformed by rapid thermal annealing (RTA).

The upper electrode 100 is formed on one side of the strained layer 90. The upper electrode 100 is formed to have a thickness of about 500 to 2000 micrometers by sputtering of aluminum or platinum, which is a metal having excellent electrical conductivity and reflectivity. The upper electrode 100 is applied with a bias voltage as a common electrode to generate an electric field between the lower electrode 80 and the upper electrode 100. Therefore, the strained layer 90 is deformed in proportion to the magnitude of the electric field described above to change the path of the light beam through which the upper electrode 100 is incident from the light source.

The stripe 110 is formed in the center by patterning the upper electrode 100. The stripe 110 uniformly operates the upper electrode 100 to prevent the incident light beam from being diffusely reflected.

Referring to FIG. 3D, after the upper electrode 100 is patterned into a predetermined shape, the distribution hole 120 is formed from the upper side of the strain pad 90 to the upper side of the drain pad 20 from the other side of the strain layer 90. 80, the membrane 70, the etch stop layer 40, and the protective layer 30 are sequentially etched to form a vertical portion from the strained layer 90 to the drain pad 20.

The distributor 130 is formed by sputtering a metal such as tungsten, platinum or titanium in the distribution hole 120 to electrically connect the drain pad 20 and the lower electrode 80. Therefore, the distributor 130 is vertically formed from the lower electrode 80 to the upper portion of the drain pad 20 in the distribution hole 120.

Subsequently, the strained layer 90, the lower electrode 80, and the membrane 70 are sequentially patterned, and then the sacrificial layer 50 is removed with hydrofluoric acid gas to form an air gap 60.

As described above, in the conventional thin film type optical path control apparatus, the lead component of the strain layer is diffused to the lower electrode in the process of forming the strain layer of piezoelectric ceramics such as PZT or PLZT on the lower electrode so that the strain layer is formed unevenly. There was a problem.

The present invention has been made to solve the conventional problems as described above, the present invention can form a diffusion barrier layer for preventing the lead component of the strain layer to diffuse to the lower electrode to form a strain layer uniformly The object is to provide a thin film type optical path control device.

In order to achieve the above object, the present invention provides a driving substrate comprising a M × N (M, N is an integer) transistor in a matrix form and including a drain pad, and protects the upper portion of the driving substrate Forming a layer, forming an etch stop layer on top of the protective layer, forming a sacrificial layer on top of the etch stop layer, and etching a portion of the sacrificial layer on which a drain pad is formed Exposing a portion of the barrier layer, forming a membrane on top of the exposed etch stop layer and on top of the sacrificial layer, forming a bottom electrode on top of the membrane, heat treating the bottom electrode, and bottom electrode Forming and heat treating a strained layer on top of the strained layer, forming an upper electrode on top of the strained layer, patterning the upper electrode into a predetermined shape, and , Patterning the diffusion barrier layer, the lower electrode, and the membrane sequentially, and then removing the sacrificial layer.

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

1 is a plan view of a conventional thin film type optical path control device,

FIG. 2 is a cross-sectional view taken along line AA ′ of the apparatus of FIG. 1; FIG.

3a to 3d is a manufacturing process diagram of the device shown in FIG.

4 is a plan view of a thin film type optical path control apparatus according to the present invention,

5 is a cross-sectional view taken along line B-B 'of the apparatus of FIG. 4;

6A to 6C are manufacturing process diagrams of the apparatus shown in FIG.

* Explanation of symbols for main parts of the drawings

510: driver board 520: drain pad

530: protective layer 540: etch stop layer

550: victim layer 560: air gap

570: membrane 580: lower electrode

590: strained layer 600: upper electrode

610: stripe 620: power distribution hall

630: distributor 640: actuator

650: diffusion prevention layer

Hereinafter, with reference to the accompanying drawings will be described in detail the thin-film optical path control apparatus according to the present invention.

4 is a plan view of a conventional thin film type optical path control device.

Referring to FIG. 4, one side of the membrane 570 has a rectangular concave portion at a central portion thereof, and the concave portion is formed in a stepped shape toward both edges. The other side of the membrane 570 has a rectangular protrusion that narrows stepwise toward the central portion corresponding to the concave portion. Therefore, the concave portion of the membrane 570 is fitted with the rectangular protrusion of the adjacent membrane, and the rectangular protrusion is fitted with the concave portion of the adjacent membrane.

FIG. 5 is a cross-sectional view of the apparatus shown in FIG. 4 taken along line B-B '.

Referring to FIG. 5, the thin film type optical path control apparatus includes a driving substrate 510 having a drain pad 520 formed on one side thereof, and an actuator 640 formed thereon.

Inside the driving substrate 510, M × N transistors (M and N are integers) are built in a matrix. In addition, the driving substrate 510 may include a passivation layer 530 formed on the upper and drain pads 520 and an etch stop layer 540 formed on the driving substrate 510.

The actuator 640 has one side in contact with a portion of the etch stop layer 540 in which the drain pad 520 is formed, and the other side of the actuator 640 is formed to be parallel to the etch stop layer 540 through the air gap 560. , A lower electrode 580 formed on the membrane 570, a diffusion barrier layer 650 formed on the lower electrode 580, a strain layer 590 formed on the diffusion barrier layer 650, and a strain layer 590. The upper electrode 600 formed on the upper portion of the upper electrode 600, the stripe 610 formed by patterning a predetermined portion of the upper electrode 600, the lower electrode 580, the membrane 570, the etching prevention layer 540 from the other side of the strained layer 590 ), A distribution hole 620 formed through the protective layer 530 to the drain pad 520, and a distribution electrode formed such that the lower electrode 580 and the drain pad 520 are electrically connected to each other in the distribution hole 620. 630).

Hereinafter, the manufacturing method of the above-mentioned thin film type optical path control apparatus is demonstrated with reference to drawings.

6A to 6D are manufacturing process diagrams of the apparatus shown in FIG. 5. In Figs. 6A to 6D, the same reference numerals are used for the same members as in Fig. 5.

Referring to FIG. 6A, a protective layer 530 including silicate glass is formed on a driving substrate 510 having M × N transistors embedded in a matrix and having a drain pad 520 formed on one side thereof.

The protective layer 530 is formed to have a thickness of about 1.0 to 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 530 protects the driving substrate 510 during the subsequent process.

The etch stop layer 540 is formed of nitride on the passivation layer 530. The etch stop layer 540 is formed to a thickness of about 1000 ~ 2000Å by a low pressure chemical vapor deposition method. The etch stop layer 540 prevents the protective layer 530 and its lower portion from being damaged during the subsequent etching process.

The sacrificial layer 550 is formed on the etch stop layer 540. The sacrificial layer 550 is formed of phosphorus silicate glass having a high concentration of phosphorus (P) to a thickness of about 1.0 to 2.0 μm by an atmospheric pressure chemical vapor deposition method. Since the sacrificial layer 550 covers the upper portion of the driving substrate 510 in which the transistor is embedded, the flatness of the surface thereof is very poor. Accordingly, the surface of the sacrificial layer 550 is planarized by a method using spin on glass (SOG) or a method using chemical mechanical polishing (CMP). Subsequently, a portion of the sacrificial layer 550 in which the drain pad 520 is formed is etched to expose a portion of the etch stop layer 540.

Referring to FIG. 6B, the membrane 570 is formed on the exposed etch stop layer 540 and on the sacrificial layer 550. The membrane 570 is formed to have a thickness of about 0.1 to 1.0 μm of nitride by a low pressure chemical vapor deposition method.

The lower electrode 580 is formed of platinum or tantalum, which is a metal having excellent electrical conductivity, on the membrane 570. The lower electrode 580 is formed to a thickness of about 500 to 2000 micrometers by a sputtering method, and then heat-treated to form a diffusion barrier layer 650 to be described later. The lower electrode 580 is a signal electrode and receives an image signal from the transistor embedded in the driving substrate 510 via the drain pad 520 and the distributor 630.

Referring to FIG. 6C, the diffusion barrier layer 650 is formed by applying a piezoelectric material such as PZT or PZLT after the lower electrode 580 is heat-treated as described above. When the lower electrode 580 is heat-treated, the titanium oxide ions are provided with heat from the lower electrode 580 to quickly combine with lead ions to form a diffusion barrier layer 650 of PbTiO ₃ on the lower electrode 580. to be.

Accordingly, the diffusion barrier layer 650 prevents the lead component in the piezoelectric material, which is a constituent of the deformable layer 590, from being subsequently diffused to the lower electrode 580.

The strained layer 590 is formed of PZT or PLZT, which is a piezoelectric material, on the lower electrode 580. The strained layer 590 is formed to have a thickness of 0.1 μm to 1.0 μm by a sol-gel method. Subsequently, the strained layer 590 is thermally transformed by rapid thermal annealing (RTA).

As such, the strained layer 590 is uniformly formed because the lead component therein cannot be diffused to the lower electrode 580 due to the diffusion barrier layer 650.

The upper electrode 600 is formed on one side of the diffusion barrier layer 650. The upper electrode 600 is formed to have a thickness of about 500 to 2000 micrometers by sputtering of aluminum or platinum, which is a metal having excellent electrical conductivity and reflective properties. The upper electrode 600 is applied with a bias voltage as a common electrode to generate an electric field between the lower electrode 580 and the upper electrode 600. Accordingly, the strained layer 590 is deformed in proportion to the magnitude of the electric field described above to change the path of the light beam through which the upper electrode 600 is incident from the light source.

The stripe 610 is formed at the center by patterning the upper electrode 600. The stripe 610 operates the upper electrode 600 uniformly to prevent the incident light beam from being diffusely reflected.

Referring to FIG. 6D, after the upper electrode 600 is patterned into a predetermined shape, the distribution hole 620 is formed of the strained layer 590 and the diffusion barrier layer from an upper portion of the strained layer 590 to an upper portion of the drain pad 520. The 650, the lower electrode 580, the membrane 570, the etch stop layer 540, and the protective layer 530 are sequentially etched to form a vertical portion from the strained layer 590 to the drain pad 520.

The distributor 630 is formed by sputtering a metal such as tungsten, platinum or titanium in the distribution hole 620 to electrically connect the drain pad 520 and the lower electrode 580. Accordingly, the power distribution 630 is vertically formed from the lower electrode 580 to the top of the drain pad 520 in the distribution hole 620.

Subsequently, the strained layer 590, the diffusion barrier layer 650, the lower electrode 580, and the membrane 570 are sequentially patterned, and then the sacrificial layer 550 is removed with hydrofluoric acid to form an air gap 560. do.

As described above, after the device of the thin film type AMA is completed, platinum-tantalum (Pt-Ta) is deposited on the lower end of the driving substrate 510 using a sputtering method to form an ohmic contact (not shown).

Next, after applying a photoresist (not shown) on the driving substrate 510, a tape carrier package for applying a bias voltage to the upper electrode 600 and an image signal to the lower electrode 580. (Not shown) The driving substrate 510 is cut out to have a predetermined thickness in preparation for bonding.

Subsequently, the pad portion of the AMA panel is etched using a dry etching method to expose the pad (not shown) of the AMA panel required for TCP bonding.

As described above, the driving substrate 510 on which the thin film type AMA element is formed is completely cut into a predetermined shape, and then the pad of the AMA panel and the TCP are connected to complete the manufacture of the thin film type AMA module.

As described above, since the thin film type optical path control device according to the present invention heat-treats the lower electrode to form a diffusion barrier layer, the lead component of the strain layer is not diffused to the lower electrode, so that the strain layer is uniformly formed.

As described above, although the present invention has been described with reference to the drawings, those skilled in the art may variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. I can understand that you can.

Claims (2)

Providing a driving substrate 510 including M × N (M, N is an integer) transistors in a matrix form and including a drain pad 520, and a protective layer 530 on the driving substrate 510. ), Forming an etch stop layer 540 on the protective layer 530, forming a sacrificial layer 550 on the etch stop layer 540, and the sacrificial layer Exposing a portion of the etch stop layer 540 by etching a portion of the drain pad 520 formed at a lower portion of the 550, and an upper portion of the exposed etch stop layer 540 and the sacrificial layer ( Forming a membrane 570 on top of the 550, forming a lower electrode 580 on the membrane 570, heat-treating the lower electrode 580, and Forming and heat-treating the strained layer 590 on top of the 580, and on top of the strained layer 590. Forming an upper electrode 600, patterning the upper electrode 600 to a predetermined shape, the deformation layer 590, the diffusion barrier layer 650, the lower electrode 580, and the membrane ( After sequential patterning 570, the method of manufacturing a thin film type optical path control device comprising the step of removing the sacrificial layer (550). The phosphorus silicate glass of claim 1, wherein the protective layer 530 is formed of phosphorus silicate glass, the etch stop layer 540 is formed of nitride, and the sacrificial layer 550 is phosphorus silicate having a high concentration of phosphorus (P). The membrane 570 is formed of nitride, the lower electrode 580 is formed of a material having good electrical conductivity, and the strained layer 590 is formed of a piezoelectric material, and the upper electrode 600 is formed of a nitride material. The manufacturing method of the thin film type optical path control device, characterized in that the excellent electrical conductivity and reflective properties are formed.